CN204067368U - A kind of IGBT device improving active area and terminal connection region field intensity uniformity - Google Patents
A kind of IGBT device improving active area and terminal connection region field intensity uniformity Download PDFInfo
- Publication number
- CN204067368U CN204067368U CN201420547169.4U CN201420547169U CN204067368U CN 204067368 U CN204067368 U CN 204067368U CN 201420547169 U CN201420547169 U CN 201420547169U CN 204067368 U CN204067368 U CN 204067368U
- Authority
- CN
- China
- Prior art keywords
- aluminum lead
- grid
- region
- active area
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical group [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The utility model relates to a kind of IGBT device improving active area and terminal connection region field intensity uniformity, and IGBT device comprises emitter aluminum lead region, grid aluminum lead region, active area, terminal P type field limiting ring, field oxide, grid Bus region and terminal area.Described grid aluminum lead region is positioned at device corner location, and emitter aluminum lead region is positioned at active area, and grid Bus region surrounds active area, and described termination environment is positioned at grid Bus area periphery.The utility model is designed by the traditional emitter of improvement and Article 1 Metal field plate, Article 1 grid field plate syndeton, and IGBT device is improved in active area and terminal connection region field intensity uniformity, makes the uniformity of the overall field intensity of IGBT device better.The utility model improves active area and the terminal connection region field intensity uniformity of IGBT, ensure that grid aluminum lead region aluminum lead integrality, improves the transmission of grid voltage, thus improve IGBT switching speed, reduces switching loss.
Description
Technical field
The utility model relates to a kind of IGBT device, specifically relates to a kind of IGBT device improving active area and terminal connection region field intensity uniformity.
Background technology
IGBT (InsulatedGateBipolarTransistor) igbt, it is a kind of NEW TYPE OF COMPOSITE power device grown up on MOSFET (MOS (metal-oxide-semiconductor) memory) and GTR (power transistor) basis, it had both had MOSFET and has been easy to drive, control the advantage that power is little, drive circuit is simple, switching speed is high, switching loss is little, the advantages such as the electric conduction again with bipolar transistor forces down, on state current is large, current handling capability is strong.In the extensive use of the circuit such as electromagnetic oven, automotive electronics, frequency converter, electric power system, electric welding machine, Switching Power Supply, make to propose very high requirement to the reliability of IGBT and switching speed.
As shown in Figure 1; in the IGBT of prior art; during in order to ensure that IGBT works, emitter aluminum lead area 01 and terminal protection ring Article 1 Metal field plate 05 ensure same current potential, are connected by emitter aluminum lead area 01 by aluminium line 10 with terminal protection ring Article 1 Metal field plate 05.
The shortcoming of prior art is that emitter aluminum lead area 01 is connected by aluminium line 10 with the connection of terminal protection ring Article 1 Metal field plate 05.Connected by this aluminum steel mode, cause the active area 08 in these aluminum steel regions bigger than normal with terminal 07 bonding pad place field intensity, make IGBT active area 08 and terminal 07 bonding pad field intensity inconsistent, easily in the occurrence dynamics snowslide of field intensity region bigger than normal, reduce the reliability of IGBT, and grid aluminum lead region aluminum lead 03 is separated by aluminium line 10, reduces the transmission speed of IGBT grid voltage, causes the switching speed of IGBT slack-off.
Therefore, need to provide a kind of technical scheme improving IGBT active area and terminal connection region field intensity uniformity.
Utility model content
For the deficiencies in the prior art, the purpose of this utility model is to provide a kind of IGBT device improving active area and terminal connection region field intensity uniformity, compared with traditional IGBT device structure, the utility model improves active area and the terminal connection region field intensity uniformity of IGBT, thus optimize IGBT in the anti-dynamic avalanche ability in active area and terminal connection region, enhance the reliability of IGBT device.The utility model ensure that grid aluminum lead region aluminum lead integrality, improves the transmission of grid voltage, thus improves IGBT switching speed, reduce switching loss.
The purpose of this utility model adopts following technical proposals to realize:
The utility model provides a kind of IGBT device improving active area and terminal connection region field intensity uniformity, and described IGBT device comprises emitter aluminum lead region, grid aluminum lead region, active area, terminal P Xing Changhuan district, grid aluminum lead region aluminum lead and termination environment; Its improvements are, described grid aluminum lead region is positioned at IGBT device corner location, and described emitter aluminum lead region is positioned at active area, and described grid aluminum lead region aluminum lead surrounds active area, and it is peripheral that described termination environment is positioned at grid aluminum lead region aluminum lead; One strip metal field plate and a grid field plate of described emitter aluminum lead region and terminal protection ring are all connected by terminal P type field limiting ring.
Further, described grid aluminum lead region aluminum lead is the closed loop be communicated with.
Further, a strip metal field plate of described terminal protection ring, a grid field plate and terminal P type field limiting ring are connected by same contact hole.
The utility model provides a kind of IGBT device improving active area and terminal connection region field intensity uniformity, described IGBT device comprises the grid aluminum lead region being positioned at device center position, in described grid aluminum lead region, surrounding is arranged with emitter aluminum lead region respectively, its improvements are, described emitter aluminum lead region is positioned at active area, described grid aluminum lead region aluminum lead surrounds active area, and it is peripheral that described termination environment is positioned at grid aluminum lead region aluminum lead; One strip metal field plate and a grid field plate of described emitter aluminum lead region and terminal protection ring are all connected by terminal P type field limiting ring.
Further, described grid aluminum lead region aluminum lead is the closed loop be communicated with.
Further, the described strip metal field plate of described terminal protection ring, a grid field plate and terminal P type field limiting ring are connected by same contact hole.
Compared with the prior art, the beneficial effect that the utility model reaches is:
Compared with traditional IGBT device structure, the utility model improves active area and the terminal connection region field intensity uniformity of IGBT, thus optimizes IGBT in the anti-dynamic avalanche ability in active area and terminal connection region, enhances the reliability of IGBT device.The utility model ensure that grid aluminum lead region aluminum lead integrality, improves the transmission of grid voltage, thus improves IGBT switching speed, reduce switching loss, be specially:
(1) emitter aluminum lead area 01 and terminal protection ring Article 1 Metal field plate 05, Article 1 grid field plate 04 are all be connected by terminal P type field limiting ring 06 everywhere; be not connected by special aluminium line; improve IGBT active area 08 and terminal 07 bonding pad place field intensity uniformity, thus improve IGBT at this place anti-dynamic avalanche ability.
(2) grid aluminum lead region aluminum lead 03 does not have divided opening, grid voltage by grid aluminum lead region aluminum lead 03 fast transport to emitter aluminum lead area 01 surrounding, then by four limits simultaneously fast transport on the cellular in each emitter aluminum lead area 01, improve IGBT switching speed, thus reduce switching loss.
(3) terminal protection ring one strip metal field plate 05, grid field plate 04 and terminal P type field limiting ring 06 are connected by same contact hole 09, are conducive to reducing termination environment size.
(4) this utility model IGBT new construction realizes simple, does not increase any processing step, to meet IGBT frequency applications field.
Accompanying drawing explanation
Fig. 1 is IGBT traditional structure rough schematic;
The IGBT device new structure rough schematic that Fig. 2 the utility model provides;
The IGBT new structure that Fig. 3 the utility model provides is along dotted line AB direction sectional view in Fig. 2;
The formation termination environment field limiting ring terminal P type field limiting ring schematic diagram that Fig. 4 the utility model provides;
The schematic diagram of the formation field oxide that Fig. 5 the utility model provides;
The schematic diagram of the formation polysilicon layer that Fig. 6 the utility model provides;
The schematic diagram of the dielectric layer deposited that Fig. 7 the utility model provides and formation contact hole;
The schematic diagram of the formation metallic aluminium line that Fig. 8 the utility model provides;
The grid aluminum lead region that Fig. 9 the utility model provides is positioned at middle IGBT new structure rough schematic;
Wherein, 01 is emitter aluminum lead region; 02 is grid aluminum lead region; 03 is grid aluminum lead region aluminum lead; 04 is a grid field plate; 05 is a strip metal field plate; 06 is terminal P type field limiting ring; 07 is terminal area; 08 is active area; 09 is contact hole; 10 is aluminium lines; 11 is polysilicon layers; 12 is substrates; 13 is field oxides; 14 is dielectric layers.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Below technical term is explained in detail:
Aluminum lead region: the window opened on the passivation layer of chip, at welded wire above during encapsulation, is connected with pin, is drawn by current potential.Specifically there are grid aluminum lead region and emitter aluminum lead region.
Grid aluminum lead region: in order to ensure that edge cellular is opened or turns off simultaneously, usually surrounds edge cellular with becket, then transmits grid potential by polysilicon.
Active area: silicon chip does the region of active device.For IGBT device, mainly refer to cell region.
Terminal P type field limiting ring: be to be adulterated the region formed by p type impurity.
The utility model provides a kind of IGBT device improving active area and terminal connection region field intensity uniformity, as shown in Figure 2, emitter aluminum lead area 01, grid aluminum lead area 02, active area 08, terminal P type field limiting ring 06, field oxide 13, grid aluminum lead region aluminum lead 03 and termination environment 07 is comprised.Described grid aluminum lead area 02 is positioned at device corner location, and emitter aluminum lead area 01 is positioned at active area 08, and grid aluminum lead region aluminum lead 03 surrounds active area 08, and it is peripheral that described termination environment 07 is positioned at grid aluminum lead region aluminum lead 03.Emitter aluminum lead area 01 is not connected by special aluminium line with terminal protection ring one strip metal field plate 05, and grid aluminum lead region aluminum lead 03 does not have divided opening, as shown in Figure 2.
Emitter aluminum lead area 01 is connected with contact hole 09 by terminal P type field limiting ring 06 with a strip metal field plate 05, grid field plate 04 of terminal protection ring, as shown in Figure 3.
Terminal protection ring one strip metal field plate 05, grid field plate 04 and terminal P type field limiting ring 06 are connected by same contact hole 09.As shown in left part in Fig. 3.
The utility model is suitable for grid aluminum lead region equally and is positioned at the middle IGBT of device, as shown in Figure 9, IGBT device comprises the grid aluminum lead region being positioned at device center position, in described grid aluminum lead region, surrounding is arranged with emitter aluminum lead region respectively, it is characterized in that, described emitter aluminum lead region is positioned at active area, and described grid aluminum lead region aluminum lead surrounds active area, and it is peripheral that described termination environment is positioned at grid aluminum lead region aluminum lead; Article 1 Metal field plate and a grid field plate of described emitter aluminum lead region and terminal protection ring are all connected by terminal P type field limiting ring; Described grid aluminum lead region aluminum lead is arranged on the metal level of IGBT device.Grid aluminum lead region aluminum lead 03 is the closed loop be communicated with.Terminal protection ring one strip metal field plate 05, grid field plate 04 and terminal P type field limiting ring 06 are connected by same contact hole 09.
Because IGBT emitter aluminum lead area 01 and terminal protection ring Article 1 Metal field plate 05, Article 1 grid field plate 04 are all connected by identical mode everywhere; be not connected by special aluminium line; improve IGBT active area 08 and terminal 07 bonding pad place field intensity uniformity, thus improve IGBT at this place anti-dynamic avalanche ability.Simultaneously, because grid aluminum lead region aluminum lead 03 does not have divided opening, grid voltage by grid aluminum lead region aluminum lead 03 fast transport to emitter aluminum lead area 01 surrounding, then by four limits simultaneously fast transport on the cellular in each emitter aluminum lead area 01, improve IGBT switching speed, thus reduce switching loss.
The utility model also provides a kind of manufacture method improving the IGBT device of active area and terminal connection region field intensity uniformity, comprises the steps:
For dotted line AB direction sectional view generative process in Fig. 2:
(1) the thin oxide layer of one deck is grown as barrier layer in the N-type substrate 12 of Uniform Doped, through gluing, exposure, to develop and after the operation such as to remove photoresist, carve the window of termination environment field limiting ring terminal P type field limiting ring 06 doping, use the method for ion implantation to carry out the doping of terminal P type field limiting ring.The ion that described terminal P type field limiting ring mixes is boron ion.As shown in Figure 4.
(2) field oxide 13 of IGBT device is manufactured: the method using high-temperature oxydation, in the oxide layer of silicon chip surface growth thick layer, utilize field oxide reticle, after gluing, exposure, development, oxide-film etching and the operation such as to remove photoresist, form field oxide 13 region.As shown in Figure 5.
(3) polysilicon layer 11 of IGBT device is manufactured: pass through depositing polysilicon, utilize polysilicon reticle, after gluing, exposure, development, etching polysilicon and the operation such as to remove photoresist, form polysilicon layer 11, also form Article 1 grid field plate 04 simultaneously.As shown in Figure 6.
(4) manufacture the contact hole 09 of IGBT device: utilize polysilicon layer 11 autoregistration, inject and form P trap, P+ draws and N+ lead-out area.Dielectric layer deposited 14 again, utilizes contact hole reticle, after gluing, exposure, development, hole etching and the operation such as to remove photoresist, forms contact hole 09.As shown in Figure 7.
(5) manufacture the metal level of IGBT device: then by Metal deposition, utilize metal layer lithography version, through photoetching, corrode and after the operation such as to remove photoresist, form metal level.Final graphics as shown in Figure 8.
(6) manufacture the grid aluminum lead region of IGBT device and emitter aluminum lead region: finally by passivating film deposit, utilize PAD level reticle, through photoetching, corrode and after the operation such as to remove photoresist, form grid aluminum lead region, emitter aluminum lead region.
The utility model is designed by the traditional emitter of improvement and Article 1 Metal field plate, Article 1 grid field plate syndeton, IGBT device is improved in active area and terminal connection region field intensity uniformity, thus makes the uniformity of the overall field intensity of IGBT device better.
Finally should be noted that: above embodiment is only in order to illustrate that the technical solution of the utility model is not intended to limit, although be described in detail the utility model with reference to above-described embodiment, those of ordinary skill in the field are to be understood that: still can modify to embodiment of the present utility model or equivalent replacement, and not departing from any amendment of the utility model spirit and scope or equivalent replacement, it all should be encompassed in the middle of right of the present utility model.
Claims (6)
1. improve an IGBT device for active area and terminal connection region field intensity uniformity, described IGBT device comprises emitter aluminum lead region, grid aluminum lead region, active area, terminal P Xing Changhuan district, grid aluminum lead region aluminum lead and termination environment; It is characterized in that, described grid aluminum lead region is positioned at IGBT device corner location, and described emitter aluminum lead region is positioned at active area, and described grid aluminum lead region aluminum lead surrounds active area, and it is peripheral that described termination environment is positioned at grid aluminum lead region aluminum lead; One strip metal field plate and a grid field plate of described emitter aluminum lead region and terminal protection ring are all connected by terminal P type field limiting ring.
2. IGBT device as claimed in claim 1, is characterized in that, described grid aluminum lead region aluminum lead is the closed loop be communicated with.
3. IGBT device as claimed in claim 1, is characterized in that, a strip metal field plate of described terminal protection ring, a grid field plate and terminal P type field limiting ring are connected by same contact hole.
4. a kind of IGBT device improving active area and terminal connection region field intensity uniformity as claimed in claim 1, described IGBT device comprises the grid aluminum lead region being positioned at device center position, in described grid aluminum lead region, surrounding is arranged with emitter aluminum lead region respectively, it is characterized in that, described emitter aluminum lead region is positioned at active area, described grid aluminum lead region aluminum lead surrounds active area, and it is peripheral that described termination environment is positioned at grid aluminum lead region aluminum lead; One strip metal field plate and a grid field plate of described emitter aluminum lead region and terminal protection ring are all connected by terminal P type field limiting ring.
5. IGBT device as claimed in claim 4, is characterized in that, described grid aluminum lead region aluminum lead is the closed loop be communicated with.
6. IGBT device as claimed in claim 4, is characterized in that, a described strip metal field plate of described terminal protection ring, a grid field plate and terminal P type field limiting ring are connected by same contact hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420547169.4U CN204067368U (en) | 2014-09-22 | 2014-09-22 | A kind of IGBT device improving active area and terminal connection region field intensity uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420547169.4U CN204067368U (en) | 2014-09-22 | 2014-09-22 | A kind of IGBT device improving active area and terminal connection region field intensity uniformity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204067368U true CN204067368U (en) | 2014-12-31 |
Family
ID=52208823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420547169.4U Active CN204067368U (en) | 2014-09-22 | 2014-09-22 | A kind of IGBT device improving active area and terminal connection region field intensity uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204067368U (en) |
-
2014
- 2014-09-22 CN CN201420547169.4U patent/CN204067368U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103579322B (en) | A kind of IGBT device and manufacture method thereof strengthening switching speed and switching uniformity | |
| CN103258847B (en) | Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers | |
| CN104051547A (en) | High-voltage rapid-soft-recovery diode and manufacturing method thereof | |
| CN103872137A (en) | Enhanced type, depletion type and current induction integrated VDMOS power device | |
| WO2023045386A1 (en) | Igbt device and manufacturing method therefor | |
| CN105679816A (en) | Trench gate charge storage type IGBT and manufacturing method thereof | |
| CN104409485A (en) | Planar gate IGBT with low-reverse transfer capacitance and anti-latch-up structure and manufacturing method of planar gate IGBT | |
| CN103268860A (en) | Manufacturing method of IGBT (insulated gate bipolar transistor) device integrated with diode | |
| CN110634950A (en) | Gallium oxide vertical structure semiconductor electronic device and manufacturing method thereof | |
| WO2022088925A1 (en) | Trench mosfet device having npn sandwich gate structure | |
| CN103855206A (en) | Insulated gate bipolar transistor and manufacturing method thereof | |
| CN104124151B (en) | A kind of groove structure Schottky-barrier diode and preparation method thereof | |
| CN106098758B (en) | A kind of junction termination structures of power device | |
| CN204067368U (en) | A kind of IGBT device improving active area and terminal connection region field intensity uniformity | |
| CN103441074A (en) | Method for manufacturing IGBT device integrated with diode | |
| CN105514154A (en) | IGBT device with improved field intensity uniformity of active area and terminal connection area and manufacturing method thereof | |
| CN110459541A (en) | Planar complementary type tunneling field effect transistor inverter | |
| WO2019242101A1 (en) | Gallium oxide vertically-structured semiconductor electronic device and manufacturing method therefor | |
| CN110212027A (en) | Electron injection enhancement type double mode MOS controls thyristor and its manufacturing method | |
| CN104616986A (en) | Preparation method of fast recovery diode | |
| CN203800056U (en) | IGBT device capable of increasing switching speed and switching uniformity | |
| CN108010842A (en) | The production method of fast recovery diode | |
| CN105097908A (en) | Ultra high-speed pulse thyristor and manufacturing method thereof | |
| CN104183485B (en) | A kind of super barrier rectifier structure and preparation method thereof | |
| CN103177958A (en) | Integrated Schottky diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |