CN204058589U - A kind of Plane Rotation prepares the device of sulfide - Google Patents
A kind of Plane Rotation prepares the device of sulfide Download PDFInfo
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- CN204058589U CN204058589U CN201420530659.3U CN201420530659U CN204058589U CN 204058589 U CN204058589 U CN 204058589U CN 201420530659 U CN201420530659 U CN 201420530659U CN 204058589 U CN204058589 U CN 204058589U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model is the device that a kind of Plane Rotation prepares sulfide.Include motor, the support for horizontal positioned sample, whipping appts, water-bath container, water bath, inlet and outlet pipe lines, its medium-height trestle is connected with the output shaft of motor, and be placed in water-bath container, whipping appts is placed in the bottom of water-bath container, water-bath container is placed in water bath, and the sidewall of water bath is provided with inlet and outlet pipe lines.Apparatus structure of the present utility model is simple, can batch scale operation.The utility model prepares the method for sulfide, and comprise MULTILAYER SUBSTRATE horizontal positioned deposition technique simultaneously, the configuration of solution, solution heats, reactive deposition, and reaction soln thermo parameters method controls.Apparatus structure of the present utility model is simple, under the prerequisite of film even compact is prepared in guarantee, realizes multiple substrates and carries out film growth reaction simultaneously.The utility model can effectively improve throughput rate and material use efficiency, prepares film dense uniform.
Description
Technical field
The utility model is the device that a kind of Plane Rotation prepares sulfide, belongs to the innovative technology that Plane Rotation prepares the device of sulfide.
Background technology
?cIGS thin film solar cell has efficiently, stable without decline and the advantage such as the low light level is good, efficiency has broken through 20.9%, is one of the most promising solar cell.CIGS thin film solar cell is a kind of structure be made up of multilayer film, generally be made up of substrate, back electrode, CIGS absorption layer, buffer layer, transparent conductive film layer and metallic top electrode grid line, wherein the effect of buffer layer forms built in field to form hetru P-N junction with P type CIGS absorption layer photo-generated carrier is separated, and the buffer layer of dense uniform can avoid the electric leakage of CIGS interface.
The method preparing buffer layer at present mainly contains chemical bath method (CBD), vacuum vapour deposition, molecular beam epitaxy, close spaced sublimation method, electrochemical deposition method, spraying cracking process, sputtering method etc.Up to now, the CIGS efficiency of solar cell prepared for CdS based on CBD legal system is the highest, and this mainly comes from the standby CdS buffer layer dense uniform of CBD legal system, and it has part Cd ion to infiltrate CIGS top layer formation shallow embedding knot in preparation process, in addition immersion method is adopting non-vacuum process, and equipment requirements is simple.
Traditional method is prepared CdS and is often adopted and vertically place substrate, or the single substrate of horizontal positioned, prepares that Cadmium Sulfide homogeneity is poor and soln using rate is low.Cadmium Sulfide solution requires comparatively harsh to reaction conditions, the material concentration of reaction solution inside and temperature distribution are to preparing the homogeneities such as Cadmium Sulfide and compactness has a significant impact, therefore ensure the utilization ratio preparing the buffer layer even compacts such as Cadmium Sulfide and augmenting response solution, have huge meaning for the efficient CIGS thin film solar cell of extensive preparation.
Summary of the invention
?the purpose of this utility model is consider the problems referred to above and provide a kind of structure simple, under the prerequisite of film even compact is prepared in guarantee, realizes the device that Plane Rotation that multiple substrates carries out film growth reaction simultaneously prepares sulfide.The utility model can effectively improve throughput rate and material use efficiency, prepares film dense uniform.
The technical solution of the utility model is: Plane Rotation of the present utility model prepares the device of sulfide, include motor, the support for horizontal positioned sample, whipping appts, water-bath container, water bath, inlet and outlet pipe lines, its medium-height trestle is connected with the output shaft of motor, and be placed in water-bath container, whipping appts is placed in the bottom of water-bath container, water-bath container is placed in water bath, and the sidewall of water bath is provided with inlet and outlet pipe lines.
The utility model is for preparing in Cadmium Sulfide buffer layer thin film process of existing in prior art, and homogenize material compactness is poor, and the problem such as soln using rate is low, and the utility model provides a kind of Plane Rotation to prepare the device of sulfide.The utility model tool has the following advantages: 1) the utility model structure is simple, under the prerequisite of film even compact is prepared in guarantee, realizes multiple substrates and carries out film growth reaction simultaneously, makes up the growth of prior art monolithic thin film.Effective raising throughput rate and material use efficiency, prepare film dense uniform.2) in the utility model, substrate level is placed and can be realized film densification growth, and realize film homoepitaxial by rotating adjustment, especially for CIGS solar cell, the buffer layers such as the Cadmium Sulfide of dense uniform realize the high efficiency key of big area.3) the utility model can realize the batch production of copper indium gallium selenide cell mass-producing modularization; higher material use efficiency can reduce the cost of this operation greatly; reduce energy consumption and pollution simultaneously, prepare efficient copper indium gallium selenide film battery have active effect for realizing low stain.
Accompanying drawing explanation
Fig. 1 is the structural representation that the utility model Plane Rotation prepares the device of sulfide.
Embodiment
Embodiment:
Plane Rotation of the present utility model prepares the structural representation of the device of sulfide as shown in Figure 1, include motor 1, the support 2 for horizontal positioned sample, whipping appts 3, water-bath container 4, water bath 6, inlet and outlet pipe lines 7, its medium-height trestle 2 is connected with the output shaft of motor 1, and support 2 is placed in water-bath container 4, whipping appts 3 is placed in the bottom of water-bath container 4, water-bath container 4 is placed in water bath 6, and the sidewall of water bath 6 is provided with inlet and outlet pipe lines 7.
In the present embodiment, in above-mentioned water bath 6, also install the magneton 5 for making whipping appts 3 realize mangneto Stirring.
In the present embodiment, the bottom of above-mentioned water bath 6 and sidewall are provided with some inlet and outlet pipe lines 7, and different inlet and outlet pipe lines 7 realizes output and the input of cold water and hot water, and the flow velocity of each inlet and outlet pipe lines 7 can regulate and control.Being uniformly distributed of temperature in water bath 6 can be realized by regulating the position of inlet and outlet pipe lines 7 and quantity and its temperature.
In the present embodiment, the above-mentioned whipping appts 3 be installed in bottom water-bath container 4 is paddle, or curved leaf turbine type, or hinged joint turbine type, or pusher, or Bu Lumajinshi, or gear type, or straight leaf disc turbine type, or anchor formula, or frame, or spiral, or the various forms stirring rake such as screw stirring rake, by the control regulating different types of water screw to realize thermo parameters method in water bath.
In the present embodiment, the container material of above-mentioned water bath 6 is the material such as simple glass, silica glass, stainless steel stable under acid-base condition, and reaction vessel is columnar structured.
In the present embodiment, can the hard substrates such as horizontal positioned glass on above-mentioned support 2, growth Cadmium Sulfide side is placed down.Or directly can the hard substrates such as horizontal positioned multiple glazing on support 2; Support 2 can rotate under the driving of motor 1 in the horizontal direction of water-bath container 4.The speed of above-mentioned motor 1 be 0.1 circle/second ~ 50 circles/second.
The utility model Plane Rotation prepares the method for sulfide, comprises the steps:
A. substrate is placed: substrate level is positioned over support 2;
B. solution preparation: for the preparation of the solution of deposition reaction;
C. liquid in heating water bath cabinet 6: for the isoperibol of water-bath;
D. water-bath solution heating: water-bath container 4 is positioned in water bath 6;
E. substrate and stentplacement: substrate and support 2 are put into water-bath container 4;
F. reactive deposition: by motor 1 drive substrate and support 2 are rotated, with in water-bath container 4 reaction soln heat up, substrate down a side reaction start to grow cadmium sulphide membrane;
G. substrate cleaning: after reaction terminates, takes out substrate and support and is positioned over the cleaning of deionized water for ultrasonic ripple;
H. substrate dries up: successively by substrate by taking out in deionized water and drying up.
In the present embodiment, the substrate in described step a is mechanically resistant material or the polyimide flex materials such as glass, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is the solution that immersion method prepares Cadmium Sulfide, or reaction soln is the solution that immersion method prepares zinc sulphide, or reaction soln is the solution that immersion method prepares other II-VI compounds
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support between 30-70 DEG C during a certain temperature; In above-mentioned water bath 6, liquid is water, and in water bath 6, fluid temperature is 20-95 DEG C, and in water-bath container 4, reaction soln temperature is 55-95 DEG C, and the water-bath time is 5min-50min; Or liquid is the high boiling liquid medium such as soya-bean oil, linen-cotton seed oil in water bath 6, in water-bath container 4, reaction soln temperature is widenable to 0-200 DEG C; Water-bath container 4 inside can be introduced ultrasonic wave and be realized cadmium sulphide membrane homoepitaxial; The support (2) that can realize the hard substrates such as horizontal positioned glass can realize the horizontal positioned of the flexible substrate such as polyimide and stainless steel by special fixtures.
Specific embodiment of the utility model is as follows:
Embodiment 1:
Substrate in described step a is polyimide flex material, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is reaction soln is the solution that immersion method prepares zinc sulphide.
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support to when 70 DEG C; In above-mentioned water bath 6, liquid is water, and in water bath 6, fluid temperature is 95 DEG C, and in water-bath container 4, reaction soln temperature is 95 DEG C, and the water-bath time is 50min.
Embodiment 2:
Substrate in described step a is the mechanically resistant materials such as glass, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is the solution that immersion method prepares other II-VI compounds.
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support to when 50 DEG C; In above-mentioned water bath 6, liquid is water, fluid temperature 65 DEG C in water bath 6, and in water-bath container 4, reaction soln temperature is 75 DEG C, and the water-bath time is 28min.
Embodiment 3:
Substrate in described step a is the mechanically resistant materials such as glass, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is the solution that immersion method prepares Cadmium Sulfide
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support to when 30 DEG C; In above-mentioned water bath 6, liquid is water, and in water bath 6, fluid temperature is 20 DEG C, and in water-bath container 4, reaction soln temperature is 55 DEG C, and the water-bath time is 5min.
Above-described embodiment is the utility model preferably embodiment; embodiment of the present utility model is not by the restriction of embodiment; the change made under other any does not deviate from spirit of the present utility model and principle, modification, substitute, combine, simplify the substitute mode that all should be equivalence, be included within protection domain of the present utility model.
Claims (5)
1. a Plane Rotation prepares the device of sulfide, it is characterized in that including motor (1), the support (2) for horizontal positioned sample, whipping appts (3), water-bath container (4), water bath (6), inlet and outlet pipe lines (7), its medium-height trestle (2) is connected with the output shaft of motor (1), and support (2) is placed in water-bath container (4), whipping appts (3) is placed in the bottom of water-bath container (4), water-bath container (4) is placed in water bath (6), and the sidewall of water bath (6) is provided with inlet and outlet pipe lines (7).
2. Plane Rotation according to claim 1 prepares the device of sulfide, it is characterized in that in above-mentioned water bath (6), also installing is used for making whipping appts (3) realize the magneton (5) of mangneto Stirring.
3. Plane Rotation according to claim 1 prepares the device of sulfide, it is characterized in that bottom and the sidewall of above-mentioned water bath (6) are provided with some inlet and outlet pipe lines (7), different inlet and outlet pipe lines (7) realize output and the input of cold water and hot water, and the flow velocity of each inlet and outlet pipe lines (7) can regulate and control.
4. Plane Rotation according to claim 1 prepares the device of sulfide, it is characterized in that the above-mentioned whipping appts (3) being installed in water-bath container (4) bottom is paddle, or curved leaf turbine type, or hinged joint turbine type, or it is pusher, or Bu Lumajinshi, or gear type, or straight leaf disc turbine type, or anchor formula, or frame, or spiral, or screw stirring rake.
5. the Plane Rotation according to any one of Claims 1-4 prepares the device of sulfide, it is characterized in that above-mentioned water bath (6) is for columnar structured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420530659.3U CN204058589U (en) | 2014-09-16 | 2014-09-16 | A kind of Plane Rotation prepares the device of sulfide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420530659.3U CN204058589U (en) | 2014-09-16 | 2014-09-16 | A kind of Plane Rotation prepares the device of sulfide |
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| CN204058589U true CN204058589U (en) | 2014-12-31 |
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| CN201420530659.3U Expired - Fee Related CN204058589U (en) | 2014-09-16 | 2014-09-16 | A kind of Plane Rotation prepares the device of sulfide |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104294238A (en) * | 2014-09-16 | 2015-01-21 | 阳江市汉能工业有限公司 | Device and method for preparing sulfide through plane rotation |
| CN109650734A (en) * | 2018-11-29 | 2019-04-19 | 华夏易能（广东）新能源科技有限公司 | A kind of immersion method coating apparatus and the coating process using it |
-
2014
- 2014-09-16 CN CN201420530659.3U patent/CN204058589U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104294238A (en) * | 2014-09-16 | 2015-01-21 | 阳江市汉能工业有限公司 | Device and method for preparing sulfide through plane rotation |
| CN109650734A (en) * | 2018-11-29 | 2019-04-19 | 华夏易能（广东）新能源科技有限公司 | A kind of immersion method coating apparatus and the coating process using it |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141231 Termination date: 20170916 |
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| CF01 | Termination of patent right due to non-payment of annual fee |