CN201655826U - Buffer layer preparation device for CIGS solar battery - Google Patents
Buffer layer preparation device for CIGS solar battery Download PDFInfo
- Publication number
- CN201655826U CN201655826U CN2009202522195U CN200920252219U CN201655826U CN 201655826 U CN201655826 U CN 201655826U CN 2009202522195 U CN2009202522195 U CN 2009202522195U CN 200920252219 U CN200920252219 U CN 200920252219U CN 201655826 U CN201655826 U CN 201655826U
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- plating bath
- solar cell
- nozzle
- resilient coating
- indium gallium
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A20/00—Water conservation; Efficient water supply; Efficient water use
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model relates to a buffer layer preparation device for a CIGS solar battery. The device comprises a conveyor belt, a plating solution spraying device, a cleaning device and a drying oven, wherein a unwinding rack and a winding rack are arranged at two ends of the conveyor belt; the plating solution spraying device is positioned above the conveyor belt, and comprises a plating solution pump outlet pipeline and a solution drainage tube which are mutually perpendicular; the inner paths of the plating solution pump outlet pipeline and the solution drainage tube are communicated; the plating solution pump outlet pipeline is connected with a plating solution pump inlet pipeline through a pressurizing metering pump; a plating solution spray nozzle is fixedly mounted on the solution drainage tube; and the cleaning device is characterized in that a deionized water pump outlet pipeline with a cleaning spray nozzle is integrally connected with a deionized water pump inlet pipeline through a water pump. The utility model adopts the spraying method to prepare the buffer layer for the CIGS solar battery, and adopts the spray nozzle to spray and plate solution on the supporting base on the conveyor belt in a three-dimension manner by utilizing the principle of dynamic crystallization, thereby greatly improving the production efficiency. As the pressurizing metering pump is adopted, the spraying amount of the plating solution is controlled, the thickness, the uniformity degree and the consistency of film of the II-VI group compounds obtained after the spraying are guaranteed, and in addition, the cost is low and the repeatability is good.
Description
Technical field
The utility model belongs to the spray equipment technical field, especially a kind of Copper Indium Gallium Selenide solar cell resilient coating preparation facilities.
Background technology
Along with the minimizing gradually of global non-renewable energy resources, solar energy obtains countries in the world as clean, regenerative resource and pays much attention to.Become to learn the main direction of academia and industrial circle research and development as the Copper Indium Gallium Selenide compound film solar cells such as (CIGS) of third generation solar cell.
II-VI compounds of group films such as cadmium sulfide CdS, zinc sulphide ZnS or cadmium telluride CdTe are widely used as the thin film solar cell resilient coating.II-VI compounds of group film preparation at present is divided into two big classes: Meteorological Act and solution chemistry method.Meteorological Act mainly comprises: vacuum evaporation, molecular beam epitaxy, sputter, chemical vapour deposition (CVD) etc.Although vapor phase method is the main technology of preparing of present II-VI compounds of group film, owing to material synthesis device costliness, preparation process complexity, the photovoltaic cell cost that obtains is very high, can not obtain large-area applying.The solution chemistry method mainly comprises chemical bath deposition and electrochemical deposition, wherein chemical bath deposition is to prepare the most frequently used method of thin film solar cell resilient coating at present, this method cost is low, simple to operate, thickness that can strict control resilient coating, film morphology, crystal structure etc., but this method production capacity is low, and poor repeatability is not suitable for serialization scale preparation Copper Indium Gallium Selenide solar cell resilient coating.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, provides that cost is low, production capacity is high, and film preparation repeatability is strong, the Copper Indium Gallium Selenide solar cell resilient coating preparation facilities of suitable serialization large-scale production.
The utility model solves its technical problem and is achieved through the following technical solutions:
A kind of Copper Indium Gallium Selenide solar cell resilient coating preparation facilities, by two ends have the conveyer belt of unwinding rack and rolling frame, plating bath spray equipment, cleaning device and the drying box that is positioned at conveyer belt top constitutes; Two above plating baths that the plating bath spray equipment is communicated by mutual vertical and interior road go out the pump line road and catheter constitutes, and plating bath goes out the pump line road and enters the pump line road by positive battery metering pump connection plating bath, is fixed with the plating bath nozzle on the catheter; Cleaning device goes out the pump line road by the deionized water that has washer jet, enters the pump line road by water pump and deionized water and connects as one.
And, be fixed with waste liquid tank below substrate heater and the substrate heater with plating bath nozzle corresponding position below the described conveyer belt.
And, the plating bath heater is arranged below the described container that fills plating bath.
And substrate heater and plating bath heater all are in series with the thermocouple unit.
And the following and washer jet corresponding position of conveyer belt is fixed with wastewater trough.
And described plating bath advances pump line road and plating bath and goes out surface, pump line road and be surrounded by the electric heating cover, and electric heating puts and is in series with the thermocouple unit.
And described plating bath nozzle is a kind of in flat mouthful nozzle, an awl mouthful nozzle, column nozzle or the high pressure nozzle.
Advantage of the present utility model and beneficial effect are:
1, the utility model adopts spray process to prepare Copper Indium Gallium Selenide solar cell resilient coating, utilizes the dynamic crystallization principle, adopts nozzle that the substrate on the conveyer belt is carried out water curtain shape spray plating bath, has greatly improved production efficiency; Adopt the positive battery metering pump, the plating bath spray flux is controlled, and the II-VI compounds of group film thickness, the uniformity, the density that obtain behind the spray are protected, and cost is low, good reproducibility.
2, the utility model adopts the dynamic crystallization principle, plating bath is contacted with substrate produce crystallization, and the continuous and fresh plating bath in surface of substrate contacts, and constantly has the crystal growth of new crystallization to go out at contact-making surface, realizes being coated with of nano thickness II-VI compounds of group film.
Description of drawings
Fig. 1 is the utility model structural representation;
Fig. 2 is a plating bath matrix spray nozzle device structural representation among Fig. 1;
Fig. 3 a is a waterfall shape nozzle schematic diagram for plating bath nozzle among Fig. 2;
Fig. 3 b is coniform nozzle schematic diagram for plating bath nozzle among Fig. 2.
Embodiment
The utility model is described in further detail below by specific embodiment, and following examples are descriptive, is not determinate, can not limit protection range of the present utility model with this.
A kind of Copper Indium Gallium Selenide solar cell resilient coating preparation facilities, innovative point be as shown in Figure 1: by two ends have the conveyer belt 5 of unwinding rack 4 and rolling frame 15, plating bath spray equipment 10, cleaning device and the drying box 14 that is positioned at the conveyer belt top constitutes; Shown in Figure 2, two above plating baths that the plating bath spray equipment is communicated by mutual vertical and interior road go out pump line road 9 and catheter 20 constitutes matrix form plating bath spray equipment; Plating bath goes out the pump line road and enters pump line road 3 by positive battery metering pump 6 connection plating baths, is fixed with plating bath nozzle 19 on the catheter; Cleaning device goes out pump line road 13 by the deionized water that has washer jet 12, enters pump line road 17 by the deionized water in water pump 16 and the deionized water container 18 and connects as one; Be fixed with waste liquid tank 7 below substrate heater 8 and the substrate heater with plating bath nozzle corresponding position below the described conveyer belt; Below the described container 2 that fills plating bath plating bath heater 1 is arranged; Substrate heater and plating bath heater all are in series with thermocouple unit (not marking among the figure); Following and the washer jet corresponding position of conveyer belt is fixed with wastewater trough 11; Described plating bath advances pump line road and plating bath and goes out surface, pump line road and be surrounded by electric heating cover (among the figure mark), and electric heating puts and is in series with thermocouple unit (among the figure mark); Described plating bath nozzle is waterfall shape nozzle shown in flat mouthful of nozzle, Fig. 3 a or the coniform nozzle shown in Fig. 3 b.
Operating process of the present utility model:
(1) configuration plating bath: place the plating bath container to stir the back mixed solution of content 0.005M cadmium acetate, 5 times of thiocarbamides, 0.005M ammonium salt, 0.005M ammoniacal liquor to cadmium acetate concentration as plating bath, connecting electric boiling plate is the plating bath heating as the plating bath heater, and control bath temperature in thermocouple unit (not marking among the figure) is 60 ℃;
(2) substrate is selected: select the web-like Copper Foil to be contained on the unwinding rack as substrate, substrate is tiled on the line conveyor, the substrate end is on the rolling frame, and connecting electric boiling plate is the substrate heating as substrate heater, and control underlayer temperature in thermocouple unit (not marking among the figure) is 60 ℃;
(3) spray: connect the measuring pump power supply, plating bath after the heating in (1) is entered the pump line road by plating bath to be flowed to plating bath and goes out the pump line road, plating bath advances pump line road and plating bath and goes out surface, pump line road and be surrounded by heating collar, and the temperature of plating bath is 60 ℃ in thermocouple unit (among the figure mark) the control pipeline; Be connected plating bath nozzle that plating bath goes out pump line road terminal with the plating bath spray on substrate, transfer rate by line conveyor is controlled the speed that substrate moves, the spray time that makes substrate is 5min, in the waste liquid tank below the waste liquid inflow substrate behind the spray, substrate behind the spray moves to below the washed with de-ionized water nozzle, start water pump, the deionized water in the deionized water container enters the pump line road through deionized water and flows to deionized water and go out substrate after the pump line road cleans plating bath, and the waste water of cleaning flows into wastewater trough; Substrate after the cleaning moves in the drying box on the line conveyor, and dry back forms the CdS film of a layer thickness 10nm, i.e. Copper Indium Gallium Selenide solar cell resilient coating on substrate.
Operation principle of the present utility model is, utilizes the method for dynamic crystallization, makes plating bath in the crystallization of substrate contact position.The temperature of control plating bath, concentration makes plating bath constantly form the II VI compounds of group crystalline membrane of nano thickness at the substrate contact-making surface.Continuous and the fresh plating bath in surface of substrate contacts, and therefore constantly has the crystal growth of new crystallization to go out at contact-making surface, thereby realizes being coated with of crystalline nano thickness thin film.Utilize spray process, with plating bath evenly spray be accompanied by the generation of deposition reaction in plating bath and the process that substrate surface contacts at substrate surface, control the interfacial reaction of plating bath and substrate, and during plated film, keep moistening always.Can realize the working condition of volume to volume continuous process, and needn't be confined to the situation that traditional one-piece substrate is coated with film, thereby improve production efficiency and output greatly.
Claims (8)
1. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities is characterized in that: this device by two ends have the conveyer belt of unwinding rack and rolling frame, plating bath spray equipment, cleaning device and the drying box that is positioned at the conveyer belt top constitutes; Two above plating baths that the plating bath spray equipment is communicated by mutual vertical and interior road go out the pump line road and catheter constitutes, and plating bath goes out the pump line road and enters the pump line road by positive battery metering pump connection plating bath, is fixed with the plating bath nozzle on the catheter; Cleaning device goes out the pump line road by the deionized water that has washer jet, enters the pump line road by water pump and deionized water and connects as one.
2. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities according to claim 1 is characterized in that: be fixed with waste liquid tank below substrate heater and the substrate heater with plating bath nozzle corresponding position below the described conveyer belt.
3. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities according to claim 1 is characterized in that: below the described container that fills plating bath the plating bath heater is arranged.
4. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities according to claim 2, it is characterized in that: described substrate heater is in series with the thermocouple unit.
5. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities according to claim 3, it is characterized in that: described plating bath heater is in series with the thermocouple unit.
6. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities according to claim 1 is characterized in that: the following and washer jet corresponding position of conveyer belt is fixed with wastewater trough.
7. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities according to claim 1 is characterized in that: described plating bath advances pump line road and plating bath and goes out surface, pump line road and be surrounded by the electric heating cover, and electric heating puts and is in series with the thermocouple unit.
8. Copper Indium Gallium Selenide solar cell resilient coating preparation facilities according to claim 1 is characterized in that: described plating bath nozzle is a kind of in flat mouthful nozzle, an awl mouthful nozzle, column nozzle or the high pressure nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202522195U CN201655826U (en) | 2009-12-29 | 2009-12-29 | Buffer layer preparation device for CIGS solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202522195U CN201655826U (en) | 2009-12-29 | 2009-12-29 | Buffer layer preparation device for CIGS solar battery |
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| Publication Number | Publication Date |
|---|---|
| CN201655826U true CN201655826U (en) | 2010-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202522195U Expired - Fee Related CN201655826U (en) | 2009-12-29 | 2009-12-29 | Buffer layer preparation device for CIGS solar battery |
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| CN (1) | CN201655826U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104607344A (en) * | 2015-01-26 | 2015-05-13 | 苏州晶洲装备科技有限公司 | Graphene film doping equipment |
| CN106684178A (en) * | 2017-01-04 | 2017-05-17 | 浙江尚越新能源开发有限公司 | CIGS thin-film solar cell buffer layer preparation system and CIGS thin-film solar cell buffer layer preparation method |
| CN112599640A (en) * | 2021-01-22 | 2021-04-02 | 尚越光电科技股份有限公司 | Buffer layer deposition device of copper indium gallium selenide thin-film solar cell |
-
2009
- 2009-12-29 CN CN2009202522195U patent/CN201655826U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104607344A (en) * | 2015-01-26 | 2015-05-13 | 苏州晶洲装备科技有限公司 | Graphene film doping equipment |
| CN104607344B (en) * | 2015-01-26 | 2016-09-21 | 苏州晶洲装备科技有限公司 | A kind of graphene film implantation equipment |
| CN106684178A (en) * | 2017-01-04 | 2017-05-17 | 浙江尚越新能源开发有限公司 | CIGS thin-film solar cell buffer layer preparation system and CIGS thin-film solar cell buffer layer preparation method |
| CN106684178B (en) * | 2017-01-04 | 2018-06-08 | 浙江尚越新能源开发有限公司 | A kind of preparation system and method for copper-indium-galliun-selenium film solar cell buffer layer |
| CN112599640A (en) * | 2021-01-22 | 2021-04-02 | 尚越光电科技股份有限公司 | Buffer layer deposition device of copper indium gallium selenide thin-film solar cell |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101124 Termination date: 20181229 |
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| CF01 | Termination of patent right due to non-payment of annual fee |