CN204676152U - A kind of UV-light chemical bath deposition prepares the device of film - Google Patents
A kind of UV-light chemical bath deposition prepares the device of film Download PDFInfo
- Publication number
- CN204676152U CN204676152U CN201520237801.XU CN201520237801U CN204676152U CN 204676152 U CN204676152 U CN 204676152U CN 201520237801 U CN201520237801 U CN 201520237801U CN 204676152 U CN204676152 U CN 204676152U
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- Prior art keywords
- light chemical
- chemical reaction
- solution mixing
- mixing device
- reaction equipment
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- 238000003302 UV-light treatment Methods 0.000 title claims abstract description 44
- 238000000224 chemical solution deposition Methods 0.000 title claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
- 238000002156 mixing Methods 0.000 claims abstract description 36
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 239000012530 fluid Substances 0.000 claims abstract description 12
- 238000010992 reflux Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 9
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 10
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000007654 immersion Methods 0.000 abstract description 6
- FRLJSGOEGLARCA-UHFFFAOYSA-N Cadmium sulfide Chemical compound [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002572 peristaltic Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- RPPBZEBXAAZZJH-UHFFFAOYSA-N Cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- PKLGPLDEALFDSB-UHFFFAOYSA-N [SeH-]=[Se].[In+3].[Cu+2].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se] Chemical compound [SeH-]=[Se].[In+3].[Cu+2].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se].[SeH-]=[Se] PKLGPLDEALFDSB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N edta Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000001678 irradiating Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model relates to the device that a kind of UV-light chemical bath deposition prepares film.This device comprises source solution supply device, solution mixing device, UV-light chemical reaction equipment and ultraviolet source system, described source solution supply device is communicated with solution mixing device by pipeline, the liquid outlet of described solution mixing device is communicated with by the fluid inlet of pipeline with UV-light chemical reaction equipment, the liquid outlet of described UV-light chemical reaction equipment is communicated with by the fluid inlet of reflux line with solution mixing device again, and described ultraviolet source system is above UV-light chemical reaction equipment.The utility model apparatus structure is simple; film shape can be controlled by the position and shape that control ultraviolet source hot spot; film thickness is controlled by light application time; reaction soln can recycle; material use efficiency is high; be suitable for very much UV-light chemistry immersion method and prepare film, be beneficial to the high-quality thin film preparing free of pinholes, uniformity, be suitable for large-scale industrial and produce.
Description
Technical field
The utility model relates to photoelectric semiconductor material and device arts, particularly, relates to the device that a kind of UV-light chemical bath deposition prepares film.
Background technology
In recent years, due to consuming excessively of the energy and increasing the weight of gradually of environmental pollution, the utilization and exploitation of renewable energy source seems more and more urgent, and this is that the mankind are faced with a great challenge, also brings huge opportunity for various new energy technology.Sun power as a kind of renewable energy source of inexhaustible, nexhaustible, clean and effective and solar energy power generating be radiated ground sun power and be transformed into electric energy by inexhaustible continuously by the opto-electronic conversion of the photovoltaic devices such as solar cell, become the safest in renewable energy source, the rival of most environmental protection and most potentiality.At present, thin-film solar cells has become the main flow of development trend, and multi-element compounds thin-film solar cells (cadmium telluride CdTe, the copper indium diselenide CuInSe of direct band gap material composition
2with copper-indium-galliun-selenium CuIn
xga
1-xse
2deng) there is higher efficiency of conversion, be easy to the advantages such as scale operation, become the solar cell material most at present with development potentiality, attract the extensive concern of industry.
At present, the solar cell actual converted efficiency of suitability for industrialized production is by window layer material---the quality influence of cadmium sulphide membrane is very large.The energy gap of Cadmium Sulfide is about 2.42eV, as a kind of important semiconductor material, is widely used as the window material of thin-film solar cells because it can allow the visible light-transmissive of the overwhelming majority.Therefore, the quality of cadmium sulphide membrane quality directly affects the efficiency of conversion of solar cell.
The existing device prepared film many employings photochemistry immersion methods such as Cadmium Sulfide and prepare, there is reaction soln concentration, pH value etc. can not regulate and control at any time, reaction soln can not recycle, produces the defects such as waste liquid is more, is unfavorable for the control to material use efficiency and production cost in suitability for industrialized production.
Summary of the invention
For the deficiencies in the prior art, the utility model coordinates UV-light water-bath sedimentation to prepare film, a kind of new device is provided, this apparatus structure is simple, in reaction process, the concentration of reaction soln can be adjusted in time according to the needs of reaction, the parameters such as pH value, film shape can be controlled by the position and shape that control ultraviolet source hot spot, film thickness is controlled by light application time, reaction soln can recycle, material use efficiency is high, reduce the waste liquid produced, production control cost, be suitable for very much UV-light chemistry immersion method and prepare film, be beneficial to and prepare free of pinholes, the high-quality thin film of uniformity, be suitable for large-scale industrial to produce.
Above-mentioned purpose of the present utility model is achieved by the following technical programs.
A kind of UV-light chemical bath deposition prepares the device of film, comprise source solution supply device, solution mixing device, UV-light chemical reaction equipment and ultraviolet source system, described source solution supply device is communicated with solution mixing device by pipeline, the liquid outlet of described solution mixing device is communicated with by the fluid inlet of pipeline with UV-light chemical reaction equipment, the liquid outlet of described UV-light chemical reaction equipment is communicated with by the fluid inlet of reflux line with solution mixing device again, and described ultraviolet source system is above UV-light chemical reaction equipment.
When the utility model device uses, reaction soln is loaded source solution supply device, reaction soln inputted after solution mixing device mixes by pipeline, input in UV-light chemical reaction equipment again, substrate is immersed in the solution in UV-light chemical reaction equipment, the liquid level of solution in device is made to keep stable by the fluid inlet and liquid outlet flow velocity controlling UV-light chemical reaction equipment, open ultraviolet source system, make on the substrate of UV-irradiation in UV-light chemical reaction equipment, the position and the shape that control ultraviolet source hot spot can control film shape, film thickness is controlled by light application time, material use efficiency is high, the waste liquid produced is also few a lot, be beneficial to and prepare free of pinholes, the high-quality thin film of uniformity.
Preferably, described source solution supply device is provided with several separate containers, all passes through pipeline communication between each container and solution mixing device.
Preferably, several containers described are equipped with pump with on each pipeline be communicated with between solution mixing device.Different reaction solns is contained in respectively in separate each container of source solution supply device, is controlled the flow of reaction soln in different vessels by the pump controlled on liquid-transport pipe-line.
For making reaction soln mix, preferably, whipping appts is provided with in described solution mixing device.
For ease of monitoring the physico-chemical property of mixing solutions, preferably, in described solution mixing device, be provided with temperature sensor and pH sensor.
Preferably, the described pipeline be connected with UV-light chemical reaction equipment fluid inlet and liquid outlet is equipped with pump.Be beneficial to the feed liquor flow velocity of control UV-light chemical reaction equipment and go out flow velocity, making the liquid level of solution in UV-light chemical reaction equipment keep stable.
Preferably, described reflux line is provided with strainer, the granule foreign in filtration cycle liquid.
Preferably, the support placing substrate is provided with in described UV-light chemical reaction equipment.
Preferably, described ultraviolet source system comprises one group and is parallel to each other and the ultraviolet lamp of power adjustable and power control.
Preferably, described ultraviolet lamp is power 50 ~ 500 mW/cm
2, the low pressure mercury lamp of wavelength 185nm or 254nm.
The utility model device can be used for UV-light chemical bath deposition and prepares film, more preferably, for the preparation of Cadmium Sulfide or zinc sulfide film.
Compared with prior art, the utility model has following beneficial effect:
The utility model apparatus structure is simple; in reaction process, the parameter such as concentration, pH value of reaction soln can be adjusted in time according to the needs of reaction; film shape can be controlled by the position and shape that control ultraviolet source hot spot; film thickness is controlled by light application time; reaction soln can recycle; material use efficiency is high; reduce the waste liquid produced; production control cost; be suitable for very much UV-light chemistry immersion method and prepare film; be beneficial to the high-quality thin film preparing free of pinholes, uniformity, be suitable for large-scale industrial and produce.
Accompanying drawing explanation
Fig. 1 is the device schematic diagram that the utility model UV-light chemistry immersion method prepares film.
Caption: 111 ~ 114 is the separate containers of four of source solution supply device; 121-pump; 122-solution mixing device; 123-whipping appts; 124-temperature sensor; 125-pH sensor; 131-pump; 133-substrate; 134-support; 135-UV-light chemical reaction equipment; 141-ultraviolet source system; 141a-power control; 141b-ultraviolet lamp; 151-strainer; 152-pump.
Embodiment
Below in conjunction with Figure of description and specific embodiment, the present invention is described in further details, but embodiment does not limit in any form the present invention.Unless stated otherwise, the present invention adopts reagent, method and apparatus are the art conventional reagent, method and apparatus.
embodiment 1
The present embodiment provides a kind of UV-light chemistry immersion method to prepare the device of film, see Fig. 1, comprise source solution supply device, solution mixing device 122, UV-light chemical reaction equipment 135 and ultraviolet source system 141, described source solution supply device comprises four separate containers 111, 112, 113, 114, be communicated with solution mixing device 122 respectively by pipeline, the liquid outlet of described solution mixing device 122 is communicated with by the fluid inlet of pipeline with UV-light chemical reaction equipment 135, the liquid outlet of described UV-light chemical reaction equipment 135 is communicated with by the fluid inlet of reflux line with solution mixing device 122 again, the support 134 placing substrate 133 is provided with in described UV-light chemical reaction equipment 135, described ultraviolet source system 141 is above UV-light chemical reaction equipment 135.
More specifically, all by pipeline communication between four containers 111 ~ 114 of described source solution supply device and solution mixing device 122, each pipeline is equipped with peristaltic pump 121.Be provided with whipping appts 123 in described solution mixing device 122, four kinds of solution that source solution supply device inputs fully are mixed.Temperature sensor 124 and pH sensor 125 is also provided with, for monitoring the SOLUTION PROPERTIES in solution mixing device 122 in described solution mixing device 122.The described pipeline be connected with UV-light chemical reaction equipment 135 fluid inlet is provided with wriggling 131, and the reflux line be connected with liquid outlet is provided with peristaltic pump 153 and strainer 151.Described ultraviolet source system 141 is parallel to each other by a power control 141a and group and the ultraviolet lamp 141b of power adjustable forms, and described ultraviolet lamp 141b is the low pressure mercury lamp of wavelength 254nm.
During by said apparatus for the preparation of cadmium sulphide membrane, using method is: by reaction soln CdSO
4solution, EDTA solution, Na
2s
2o
3solution and rare H
2sO
4solution respectively splendid attire to four of source solution supply device separate containers 111 ~ 114, the flow of reaction soln input solution mixing device 122 is controlled by control pump 121, after question response solution input solution mixing device 122, open whipping appts 123, four kinds of solution are fully mixed; Meanwhile, observe the registration of pH sensor 125, regulate rare H in time
2sO
4the flow of solution (5%), makes the pH value of mixing solutions in solution mixing device 122 keep within the specific limits.By mixing solutions by peristaltic pump 121 slowly input UV-light chemical reaction equipment 135, clean glass substrate 133 be impregnated in this solution, regulate the peristaltic pump 131 on UV-light chemical reaction equipment 135 liquid-inlet pipe and the peristaltic pump 153 on drain pipe, guarantee that the distance between liquid level and substrate remains within the scope of 2 ~ 5mm.Open the power control 141a of ultraviolet lamp mercury lamp group 141b, irradiate glass substrate 133 with the uniform directional light that ultraviolet lamp 141b produces, after irradiating for some time, obtain the cadmium sulphide membrane of uniformity.
Claims (10)
1. a UV-light chemical bath deposition prepares the device of film, it is characterized in that, comprise source solution supply device, solution mixing device, UV-light chemical reaction equipment and ultraviolet source system, described source solution supply device is communicated with solution mixing device by pipeline, the liquid outlet of described solution mixing device is communicated with by the fluid inlet of pipeline with UV-light chemical reaction equipment, the liquid outlet of described UV-light chemical reaction equipment is communicated with by the fluid inlet of reflux line with solution mixing device again, described ultraviolet source system is above UV-light chemical reaction equipment.
2. device according to claim 1, is characterized in that, described source solution supply device is provided with several separate containers, all passes through pipeline communication between each container and solution mixing device.
3. device according to claim 2, is characterized in that, several containers described are equipped with pump with on each pipeline be communicated with between solution mixing device.
4. device according to claim 3, is characterized in that, is provided with whipping appts in described solution mixing device.
5. device according to claim 4, is characterized in that, is provided with temperature sensor and pH sensor in described solution mixing device.
6. device according to claim 5, is characterized in that, the described pipeline be connected with UV-light chemical reaction equipment fluid inlet and liquid outlet is equipped with pump.
7. device according to claim 6, is characterized in that, described reflux line is provided with strainer.
8. device according to claim 7, is characterized in that, is provided with the support placing substrate in described UV-light chemical reaction equipment.
9. device according to claim 8, is characterized in that, described ultraviolet source system comprises one group and is parallel to each other and the ultraviolet lamp of power adjustable and power control.
10. device according to claim 9, is characterized in that, described ultraviolet lamp is power 50 ~ 500 mW/cm
2, the low pressure mercury lamp of wavelength 185nm or 254nm.
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CN201520237801.XU CN204676152U (en) | 2015-04-20 | 2015-04-20 | A kind of UV-light chemical bath deposition prepares the device of film |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106987828A (en) * | 2017-03-08 | 2017-07-28 | 沈阳工程学院 | A kind of colloidal solution is prepared and coating apparatus and film plating process |
CN107723686A (en) * | 2017-09-20 | 2018-02-23 | 南京航空航天大学 | A kind of method and apparatus for preparing ZnO crystalloid films |
-
2015
- 2015-04-20 CN CN201520237801.XU patent/CN204676152U/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106987828A (en) * | 2017-03-08 | 2017-07-28 | 沈阳工程学院 | A kind of colloidal solution is prepared and coating apparatus and film plating process |
CN106987828B (en) * | 2017-03-08 | 2019-05-17 | 沈阳工程学院 | A kind of preparation of colloidal solution and coating apparatus and film plating process |
CN107723686A (en) * | 2017-09-20 | 2018-02-23 | 南京航空航天大学 | A kind of method and apparatus for preparing ZnO crystalloid films |
CN107723686B (en) * | 2017-09-20 | 2020-03-17 | 南京航空航天大学 | Method and equipment for preparing ZnO crystal film |
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