CN104294238A - Device and method for preparing sulfide through plane rotation - Google Patents
Device and method for preparing sulfide through plane rotation Download PDFInfo
- Publication number
- CN104294238A CN104294238A CN201410470580.0A CN201410470580A CN104294238A CN 104294238 A CN104294238 A CN 104294238A CN 201410470580 A CN201410470580 A CN 201410470580A CN 104294238 A CN104294238 A CN 104294238A
- Authority
- CN
- China
- Prior art keywords
- water
- bath
- sulfide
- substrate
- prepares
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention relates to a device and a method for preparing a sulfide through plane rotation. The device for preparing the sulfide through plane rotation comprises a motor, a support frame, a stirring device, a water bath reaction vessel, a water bath, a water inlet pipeline and a water outlet pipeline, wherein the support frame is used for horizontal placement of a sample, the support frame is connected with an output shaft of the motor, and the support frame is arranged in the water bath reaction vessel; the stirring device is arranged at the bottom of the water bath reaction vessel; the water bath reaction vessel is arranged in the water bath; the side wall of the water bath is provided with the water inlet pipeline and the water outlet pipeline. The device disclosed by the invention has simple structure and is suitable for batched large-scale production. The method for preparing the sulfide through plane rotation comprises a multilayer substrate horizontal placement codeposition technology, solution preparation, solution heating, reaction sedimentation and reaction solution temperature field distribution control. The device disclosed by the invention is simple in structure and realizes simultaneous film growth reaction of multiple substrates under the precondition of ensuring the uniformity and compactness of a prepared film. The method disclosed by the invention can effectively enhance the production rate and the material utilization rate; and the prepared film is compact and uniform.
Description
Technical field
The present invention is the device and method that a kind of Plane Rotation prepares sulfide, belongs to the innovative technology that Plane Rotation prepares the device and method of sulfide.
Background technology
?cIGS thin film solar cell has efficiently, stable without decline and the advantage such as the low light level is good, efficiency has broken through 20.9%, is one of the most promising solar cell.CIGS thin film solar cell is a kind of structure be made up of multilayer film, generally be made up of substrate, back electrode, CIGS absorption layer, buffer layer, transparent conductive film layer and metallic top electrode grid line, wherein the effect of buffer layer forms built in field to form hetru P-N junction with P type CIGS absorption layer photo-generated carrier is separated, and the buffer layer of dense uniform can avoid the electric leakage of CIGS interface.
The method preparing buffer layer at present mainly contains chemical bath method (CBD), vacuum vapour deposition, molecular beam epitaxy, close spaced sublimation method, electrochemical deposition method, spraying cracking process, sputtering method etc.Up to now, the CIGS efficiency of solar cell prepared for CdS based on CBD legal system is the highest, and this mainly comes from the standby CdS buffer layer dense uniform of CBD legal system, and it has part Cd ion to infiltrate CIGS top layer formation shallow embedding knot in preparation process, in addition immersion method is adopting non-vacuum process, and equipment requirements is simple.
Traditional method is prepared CdS and is often adopted and vertically place substrate, or the single substrate of horizontal positioned, prepares that Cadmium Sulfide homogeneity is poor and soln using rate is low.Cadmium Sulfide solution requires comparatively harsh to reaction conditions, the material concentration of reaction solution inside and temperature distribution are to preparing the homogeneities such as Cadmium Sulfide and compactness has a significant impact, therefore ensure the utilization ratio preparing the buffer layer even compacts such as Cadmium Sulfide and augmenting response solution, have huge meaning for the efficient CIGS thin film solar cell of extensive preparation.
Summary of the invention
?the object of the invention is to consider the problems referred to above and provide a kind of structure simple, under the prerequisite of film even compact is prepared in guarantee, realize the device that Plane Rotation that multiple substrates carries out film growth reaction simultaneously prepares sulfide.
The object of the invention is to consider the problems referred to above and provide a kind of Plane Rotation to prepare the method for sulfide.The present invention can effectively improve throughput rate and material use efficiency, prepares film dense uniform.
Technical scheme of the present invention is: Plane Rotation of the present invention prepares the device of sulfide, include motor, the support for horizontal positioned sample, whipping appts, water-bath container, water bath, inlet and outlet pipe lines, its medium-height trestle is connected with the output shaft of motor, and be placed in water-bath container, whipping appts is placed in the bottom of water-bath container, water-bath container is placed in water bath, and the sidewall of water bath is provided with inlet and outlet pipe lines.
Plane Rotation of the present invention prepares the method for sulfide, comprises the steps:
A. substrate is placed: substrate level is positioned over support;
B. solution preparation: for the preparation of the solution of deposition reaction;
C. liquid in heating water bath cabinet: for water-bath isoperibol;
D. solution heating: water-bath container is positioned in water bath;
E. substrate and stentplacement: substrate and support are put into water-bath container;
F. reactive deposition: driven by motor and substrate and support are rotated, heat up with reaction soln in water-bath container, substrate down a side reaction start to grow cadmium sulphide membrane;
G. substrate cleaning: after reaction terminates, takes out substrate and support and is positioned over the cleaning of deionized water for ultrasonic ripple;
H. substrate dries up: successively by substrate by taking out in deionized water and drying up.
The present invention is directed to preparing in Cadmium Sulfide buffer layer thin film process of existing in prior art, homogenize material compactness is poor, and the problem such as soln using rate is low, the invention provides the device and method that a kind of Plane Rotation prepares sulfide.Tool of the present invention has the following advantages: 1) structure of the present invention is simple, under the prerequisite of film even compact is prepared in guarantee, realizes multiple substrates and carries out film growth reaction simultaneously, makes up the growth of prior art monolithic thin film.Effective raising throughput rate and material use efficiency, prepare film dense uniform.2) in the present invention, substrate level is placed and can be realized film densification growth, and realize film homoepitaxial by rotating adjustment, especially for CIGS solar cell, the buffer layers such as the Cadmium Sulfide of dense uniform realize the high efficiency key of big area.3) the present invention can realize the batch production of copper indium gallium selenide cell mass-producing modularization, and higher material use efficiency can reduce the cost of this operation greatly, reduces energy consumption and pollution simultaneously, prepares efficient copper indium gallium selenide film battery have active effect for realizing low stain.
Accompanying drawing explanation
Fig. 1 is the structural representation that Plane Rotation of the present invention prepares the device of sulfide.
Embodiment
Embodiment:
Plane Rotation of the present invention prepares the structural representation of the device of sulfide as shown in Figure 1, include motor 1, the support 2 for horizontal positioned sample, whipping appts 3, water-bath container 4, water bath 6, inlet and outlet pipe lines 7, its medium-height trestle 2 is connected with the output shaft of motor 1, and support 2 is placed in water-bath container 4, whipping appts 3 is placed in the bottom of water-bath container 4, water-bath container 4 is placed in water bath 6, and the sidewall of water bath 6 is provided with inlet and outlet pipe lines 7.
In the present embodiment, in above-mentioned water bath 6, also install the magneton 5 for making whipping appts 3 realize mangneto Stirring.
In the present embodiment, the bottom of above-mentioned water bath 6 and sidewall are provided with some inlet and outlet pipe lines 7, and different inlet and outlet pipe lines 7 realizes output and the input of cold water and hot water, and the flow velocity of each inlet and outlet pipe lines 7 can regulate and control.Being uniformly distributed of temperature in water bath 6 can be realized by regulating the position of inlet and outlet pipe lines 7 and quantity and its temperature.
In the present embodiment, the above-mentioned whipping appts 3 be installed in bottom water-bath container 4 is paddle, or curved leaf turbine type, or hinged joint turbine type, or pusher, or Bu Lumajinshi, or gear type, or straight leaf disc turbine type, or anchor formula, or frame, or spiral, or the various forms stirring rake such as screw stirring rake, by the control regulating different types of water screw to realize thermo parameters method in water bath.
In the present embodiment, the container material of above-mentioned water bath 6 is the material such as simple glass, silica glass, stainless steel stable under acid-base condition, and reaction vessel is columnar structured.
In the present embodiment, can the hard substrates such as horizontal positioned glass on above-mentioned support 2, growth Cadmium Sulfide side is placed down.Or directly can the hard substrates such as horizontal positioned multiple glazing on support 2; Support 2 can rotate under the driving of motor 1 in the horizontal direction of water-bath container 4.The speed of above-mentioned motor 1 be 0.1 circle/second ~ 50 circles/second.
Plane Rotation of the present invention prepares the method for sulfide, comprises the steps:
A. substrate is placed: substrate level is positioned over support 2;
B. solution preparation: for the preparation of the solution of deposition reaction;
C. liquid in heating water bath cabinet 6: for the isoperibol of water-bath;
D. water-bath solution heating: water-bath container 4 is positioned in water bath 6;
E. substrate and stentplacement: substrate and support 2 are put into water-bath container 4;
F. reactive deposition: by motor 1 drive substrate and support 2 are rotated, with in water-bath container 4 reaction soln heat up, substrate down a side reaction start to grow cadmium sulphide membrane;
G. substrate cleaning: after reaction terminates, takes out substrate and support and is positioned over the cleaning of deionized water for ultrasonic ripple;
H. substrate dries up: successively by substrate by taking out in deionized water and drying up.
In the present embodiment, the substrate in described step a is mechanically resistant material or the polyimide flex materials such as glass, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is the solution that immersion method prepares Cadmium Sulfide, or reaction soln is the solution that immersion method prepares zinc sulphide, or reaction soln is the solution that immersion method prepares other II-VI compounds
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support between 30-70 DEG C during a certain temperature; In above-mentioned water bath 6, liquid is water, and in water bath 6, fluid temperature is 20-95 DEG C, and in water-bath container 4, reaction soln temperature is 55-95 DEG C, and the water-bath time is 5min-50min; Or liquid is the high boiling liquid medium such as soya-bean oil, linen-cotton seed oil in water bath 6, in water-bath container 4, reaction soln temperature is widenable to 0-200 DEG C; Water-bath container 4 inside can be introduced ultrasonic wave and be realized cadmium sulphide membrane homoepitaxial; The support (2) that can realize the hard substrates such as horizontal positioned glass can realize the horizontal positioned of the flexible substrate such as polyimide and stainless steel by special fixtures.
Specific embodiments of the invention are as follows:
Embodiment 1:
Substrate in described step a is polyimide flex material, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is reaction soln is the solution that immersion method prepares zinc sulphide.
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support to when 70 DEG C; In above-mentioned water bath 6, liquid is water, and in water bath 6, fluid temperature is 95 DEG C, and in water-bath container 4, reaction soln temperature is 95 DEG C, and the water-bath time is 50min.
Embodiment 2:
Substrate in described step a is the mechanically resistant materials such as glass, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is the solution that immersion method prepares other II-VI compounds.
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support to when 50 DEG C; In above-mentioned water bath 6, liquid is water, fluid temperature 65 DEG C in water bath 6, and in water-bath container 4, reaction soln temperature is 75 DEG C, and the water-bath time is 28min.
Embodiment 3:
Substrate in described step a is the mechanically resistant materials such as glass, and reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, and wherein I race element comprises copper (Cu), silver (Ag) etc.; II race element comprises zinc (Zn), cadmium (Cd) etc.; III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In) etc.; IV race element comprises germanium (Ge), tin (Sn), and VI race elements such as plumbous (Pb) comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
In the present embodiment, in described step b, reaction soln is the solution that immersion method prepares Cadmium Sulfide
In the present embodiment, in described step e, the time that reaction soln put into by substrate and support can regulate, and question response solution puts into sample and support to when 30 DEG C; In above-mentioned water bath 6, liquid is water, and in water bath 6, fluid temperature is 20 DEG C, and in water-bath container 4, reaction soln temperature is 55 DEG C, and the water-bath time is 5min.
Above-described embodiment is the present invention's preferably embodiment; embodiments of the present invention are not by the restriction of embodiment; the change made under other any does not deviate from spirit of the present invention and principle, modification, substitute, combine, simplify the substitute mode that all should be equivalence, be included within protection scope of the present invention.
Claims (10)
1. a Plane Rotation prepares the device of sulfide, it is characterized in that including motor (1), the support (2) for horizontal positioned sample, whipping appts (3), water-bath container (4), water bath (6), inlet and outlet pipe lines (7), its medium-height trestle (2) is connected with the output shaft of motor (1), and support (2) is placed in water-bath container (4), whipping appts (3) is placed in the bottom of water-bath container (4), water-bath container (4) is placed in water bath (6), and the sidewall of water bath (6) is provided with inlet and outlet pipe lines (7).
2. Plane Rotation according to claim 1 prepares the device of sulfide, it is characterized in that in above-mentioned water bath (6), also installing is used for making whipping appts (3) realize the magneton (5) of mangneto Stirring.
3. Plane Rotation according to claim 1 prepares the device of sulfide, it is characterized in that bottom and the sidewall of above-mentioned water bath (6) are provided with some inlet and outlet pipe lines (7), different inlet and outlet pipe lines (7) realize output and the input of cold water and hot water, and the flow velocity of each inlet and outlet pipe lines (7) can regulate and control.
4. Plane Rotation according to claim 1 prepares the device of sulfide, it is characterized in that the above-mentioned whipping appts (3) being installed in water-bath container (4) bottom is paddle, or curved leaf turbine type, or hinged joint turbine type, or it is pusher, or Bu Lumajinshi, or gear type, or straight leaf disc turbine type, or anchor formula, or frame, or spiral, or screw stirring rake.
5. Plane Rotation according to claim 1 prepares the device of sulfide, and it is characterized in that the container material of above-mentioned water bath (6) is glass, silica glass, stainless steel, reaction vessel is columnar structured.
6. Plane Rotation according to claim 1 prepares the device of sulfide, and it is characterized in that above-mentioned support (2) upper energy horizontal positioned hard substrates, growth Cadmium Sulfide side is placed down.
7. Plane Rotation prepares a method for sulfide, it is characterized in that comprising the steps:
A. substrate is placed: substrate level is positioned over support (2);
B. solution preparation: for the preparation of the solution of deposition reaction;
C. heating water bath cabinet (6) interior liquid: for water-bath isoperibol;
D. solution heating: water-bath container (4) is positioned in water bath (6);
E. substrate and stentplacement: substrate and support (2) are put into water-bath container (4);
F. reactive deposition: driven by motor (1) and substrate and support (2) are rotated, with interior the reaction soln intensification of water-bath container (4), substrate down a side reaction start to grow cadmium sulphide membrane;
G. substrate cleaning: after reaction terminates, takes out substrate and support and is positioned over the cleaning of deionized water for ultrasonic ripple;
H. substrate dries up: successively by substrate by taking out in deionized water and drying up.
8. Plane Rotation according to claim 7 prepares the method for sulfide, it is characterized in that: the substrate in described step a is mechanically resistant material or polyimide flex material, reaction surface is for grown I-III-VI2 material, IV-VI, I2-VI and I2-II-IV-VI4, wherein I race element comprises copper (Cu), silver (Ag); II race element comprises zinc (Zn), cadmium (Cd); III element comprises boron (B), aluminium (Al), gallium (Ga), indium (In); IV race element comprises germanium (Ge), tin (Sn), and plumbous (Pb), VI race element comprises oxygen (O), sulphur (S), selenium (Se), tellurium (Te).
9. Plane Rotation according to claim 8 prepares the method for sulfide, it is characterized in that: in described step b, reaction soln is the solution that immersion method prepares Cadmium Sulfide, or reaction soln is the solution that immersion method prepares zinc sulphide, or reaction soln is the solution that immersion method prepares other II-VI compounds.
10. Plane Rotation according to claim 9 prepares the method for sulfide, it is characterized in that: described step e comprises: the time that reaction soln put into by substrate and support can regulate, question response solution puts into sample and support between 30-70 DEG C during a certain temperature; Above-mentioned water bath (6) interior liquid is water, and water bath (6) interior fluid temperature is 20-95 DEG C, and the interior reaction soln temperature of water-bath container (4) is 55-95 DEG C, and the water-bath time is 5min-50min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410470580.0A CN104294238A (en) | 2014-09-16 | 2014-09-16 | Device and method for preparing sulfide through plane rotation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410470580.0A CN104294238A (en) | 2014-09-16 | 2014-09-16 | Device and method for preparing sulfide through plane rotation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104294238A true CN104294238A (en) | 2015-01-21 |
Family
ID=52314182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410470580.0A Pending CN104294238A (en) | 2014-09-16 | 2014-09-16 | Device and method for preparing sulfide through plane rotation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104294238A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104762611A (en) * | 2015-04-09 | 2015-07-08 | 深圳先进技术研究院 | Chemical bath deposition equipment and method for preparing ZnS thin film |
| CN105132893A (en) * | 2015-09-17 | 2015-12-09 | 西交利物浦大学 | Compact cadmium sulfide thin film preparation device and method |
| CN110885974A (en) * | 2018-09-07 | 2020-03-17 | 北京铂阳顶荣光伏科技有限公司 | Chemical water bath deposition device |
| CN112962139A (en) * | 2021-03-03 | 2021-06-15 | 南方科技大学 | Film growth method and device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1544689A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Multiple sheet large area chemical bath deposition apparatus |
| CN103320774A (en) * | 2013-07-15 | 2013-09-25 | 北京四方继保自动化股份有限公司 | Chemical bath deposition method of cadmium sulfide film and device thereof |
| CN103643225A (en) * | 2013-11-27 | 2014-03-19 | 中国科学院上海硅酸盐研究所 | Method of preparing large-dimension cadmium sulfide film by chemical water-bath method |
| CN204058589U (en) * | 2014-09-16 | 2014-12-31 | 阳江市汉能工业有限公司 | A kind of Plane Rotation prepares the device of sulfide |
-
2014
- 2014-09-16 CN CN201410470580.0A patent/CN104294238A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1544689A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Multiple sheet large area chemical bath deposition apparatus |
| CN103320774A (en) * | 2013-07-15 | 2013-09-25 | 北京四方继保自动化股份有限公司 | Chemical bath deposition method of cadmium sulfide film and device thereof |
| CN103643225A (en) * | 2013-11-27 | 2014-03-19 | 中国科学院上海硅酸盐研究所 | Method of preparing large-dimension cadmium sulfide film by chemical water-bath method |
| CN204058589U (en) * | 2014-09-16 | 2014-12-31 | 阳江市汉能工业有限公司 | A kind of Plane Rotation prepares the device of sulfide |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104762611A (en) * | 2015-04-09 | 2015-07-08 | 深圳先进技术研究院 | Chemical bath deposition equipment and method for preparing ZnS thin film |
| CN105132893A (en) * | 2015-09-17 | 2015-12-09 | 西交利物浦大学 | Compact cadmium sulfide thin film preparation device and method |
| CN110885974A (en) * | 2018-09-07 | 2020-03-17 | 北京铂阳顶荣光伏科技有限公司 | Chemical water bath deposition device |
| CN112962139A (en) * | 2021-03-03 | 2021-06-15 | 南方科技大学 | Film growth method and device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101630701B (en) | Method for preparing copper-indium-selenium optoelectronic thin film material of solar cell | |
| CN102024870B (en) | System and method for manufacturing semiconductor thin film solar cell | |
| CN104294238A (en) | Device and method for preparing sulfide through plane rotation | |
| US8927322B2 (en) | Combinatorial methods for making CIGS solar cells | |
| CN105514276A (en) | Mesoporous perovskite photovoltaic material and preparation method thereof | |
| CN102254998A (en) | Cadmium-free CuInGaSe thin film solar cell assembly and preparing method of zinc sulfide buffer layer thin film thereof | |
| CN204058589U (en) | A kind of Plane Rotation prepares the device of sulfide | |
| CN100552099C (en) | Improved electrochemical deposition process prepares the single c-axle oriented zinc oxide film method | |
| CN101982567A (en) | Preparation method of copper indium selenium sulphur (CuInSe2-xSx) film for solar battery | |
| CN102270699A (en) | Preparation methods of CIGS (Cu (In, Ga) Se2)-free thin film solar cell and zinc sulfide buffer layer | |
| CN101235475A (en) | Method for preparing copper indium sulfide thin film | |
| CN103318851B (en) | Copper-indium-gallium-sulfur-selenium solar cell, film absorbing layer and preparation method thereof | |
| CN105470113B (en) | A kind of preparation method of CZTSSe absorption layer of thin film solar cell | |
| CN104264211A (en) | High temperature solvent thermal preparation method and applications of monocrystalline submicron Cu2ZnSnS4 particle | |
| CN112201709A (en) | Antimony selenide thin film solar cell and preparation method and application thereof | |
| JP2016119441A (en) | Compound solar cell and formation method of thin film with sulfide monocrystalline nanoparticles | |
| CN101694854B (en) | Synthesizing method for preparing CIS film and device by non-vacuum liquid phase chemical method | |
| CN107093639A (en) | A kind of selenizing method of copper-zinc-tin-sulfur film | |
| CN106098814A (en) | A kind of oxide nano particles prepares the method for solar battery obsorbing layer CTSSe thin film | |
| JP2013070032A (en) | Manufacturing method of buffer layer and manufacturing method of photoelectric conversion element | |
| CN105633212B (en) | It is a kind of to be based on the method and apparatus that a step coevaporation technique prepares gradient band gap light absorbing zone | |
| CN203503680U (en) | Integrated apparatus for continuous film production | |
| JP2011159648A (en) | Method and apparatus for manufacturing buffer layer | |
| KR101097712B1 (en) | Deposition apparatus using chemical bath deposition | |
| CN105529243A (en) | Method for copper indium diselenide optoelectronic film by sulphate system in two-step process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150121 |