CN105529243A - Method for copper indium diselenide optoelectronic film by sulphate system in two-step process - Google Patents
Method for copper indium diselenide optoelectronic film by sulphate system in two-step process Download PDFInfo
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- CN105529243A CN105529243A CN201510943194.3A CN201510943194A CN105529243A CN 105529243 A CN105529243 A CN 105529243A CN 201510943194 A CN201510943194 A CN 201510943194A CN 105529243 A CN105529243 A CN 105529243A
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- hydrazine hydrate
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 19
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 title claims abstract description 9
- 230000008569 process Effects 0.000 title claims abstract description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title abstract 5
- 229910021653 sulphate ion Inorganic materials 0.000 title abstract 2
- 239000002243 precursor Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 19
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims abstract description 16
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000012153 distilled water Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 9
- 238000004070 electrodeposition Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 24
- 239000011669 selenium Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 17
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000009776 industrial production Methods 0.000 abstract description 2
- 229910018162 SeO2 Inorganic materials 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 abstract 1
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- XXUJMEYKYHETBZ-UHFFFAOYSA-N ethyl 4-nitrophenyl ethylphosphonate Chemical compound CCOP(=O)(CC)OC1=CC=C([N+]([O-])=O)C=C1 XXUJMEYKYHETBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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Abstract
A method for a copper indium diselenide optoelectronic film by a sulphate system in a two-step process belongs to the technical field of preparation of an optoelectronic film for a solar cell. The copper indium diselenide optoelectronic film is obtained according to the following steps of firstly, cleaning a tin dioxide conductive glass substrate; secondly, placing C<6>H<5>Na<3>O<7>.2H<2>O, CuSO<4>.5H<2>O, In2(SO4)3 and SeO2 in distilled water, obtaining a precursor film on the conductive glass substrate by an electrodeposition method, naturally drying the precursor film, placing the precursor film in a tube furnace added with hydrazine hydrate so that a precursor film sample is not in contact with the hydrazine hydrate, heating the precursor film in the closed tube furnace to make the precursor film selenized, wherein selenium powder is added into the hydrazine hydrate; and finally, taking out the sample and drying the sample to obtain the copper indium diselenide optoelectronic film. According to the method, a high vacuum condition is not needed, the requirement on instrument and device is low, the production cost is low, the production efficiency is high, and the method is easy to operate. The obtained copper indium diselenide optoelectronic film has favorable continuity and uniformity, a main phase is a CuInSe2 phase, and low-cost industrial production at a large scale can be achieved.
Description
Technical field
The invention belongs to optoelectronic film preparing technical field used for solar batteries, particularly relate to a kind of method that sulfate system two-step method prepares copper-indium-selenium optoelectronic film.
Background technology
Along with society and expanding economy; the pollution that energy scarcity and consuming energy bring has become the outstanding problem in domestic social development; coal, oil etc. are non-renewable resources, therefore develop clean reproducible energy to protection of the environment, ensure sustainable economic development and construct harmonious society have important meaning.Photovoltaic generation have safe and reliable, noiseless, pollution-free, restriction less, the advantage such as failure rate is low, easy maintenance, can utilize the regenerative resource of this clean, safety of solar energy and environmental protection, therefore the research and development of solar cell comes into one's own day by day in recent decades.
Copper, indium and selenium film solar cell can think the most promising hull cell at present, this is because its absorbed layer material C uInSe
2there is a series of advantage: (1) is at CuInSe
2adulterate in basis other element, as made Ga or Al part replace In atom, replacing Se be namely prepared into Cu (In by S part
1-xga
x) Se
2, Cu (In
1-xga
x) (Se
2-ys
y), Cu (In
1-xal
x) (Se
2-xs
x), its crystal structure remains chalcopyrite.Change the atomic ratio of wherein Ga/ (Ga+In) etc., its energy gap can be made to change between 1.04 ~ 1.72eV, comprise bandgap range 1.4 ~ 1.6eV that high efficiency absorbs sunlight; (2) CuInSe
2, Cu (In
1-xga
x) Se
2be the semi-conducting material of direct band gap, very large to solar spectrum response characteristic, its absorption coefficient is very high, and absorptivity is up to 1 ~ 6 × 10
5cm
-1, thus required CuInSe in battery
2, Cu (In
1-xga
x) Se
2film thickness is very little, about 2 μm, is most suitable for thin film; (3) stoichiometric proportion CuInSe
2photo-quantum efficiency high; (4) high photoelectric conversion efficiency; (5) in wider composition range, resistivity is all less; (6) capability of resistance to radiation is strong, does not have photo attenuation effect, thus long service life; (7) Cu (In
1-xga
x) Se
2be that many clones system easily made by battery.In 4 junction batteries, from light direction by the descending order arrangement of energy gap, the theoretical conversion efficiencies limit at this moment can more than 50%.(8) lattice structure of P type CIGS material can be mated with common N-type window material (as CdS, ZnO) with electron affinity.
Be in the Cu (In of advanced level at present
1-xga
x) Se
2photovoltaic absorbing material is all deposit preparation under vacuum, mainly contains vacuum vapour deposition and (copper and indium alloy film) sputtering-selenizing method.CuInSe
2the need of production of base absorbed layer adopts the vacuum technique of the costliness of deposit alloy layer.In vacuum technique, complicated operation difficulty is large, and gained film is also uneven.Also uneven containing film in the technique of selenizing in addition, be difficult to the stoichiometric proportion controlling each component, wherein H
2the toxic gas pollution environment of Se and Se and harm operating personnel.
The same with method noted earlier, other method also has different defects.Related to the present invention also has as Publication about Document:
[1]M.Valdés,M.Vázquez,A.Goossens,ElectrodepositionofCuInSe
2andIn
2Se
3onflatandnanoporousTiO
2substrates,ElectrochimicaActa54(2008)524–529.
Essentially describe and prepare In respectively with electrodeposition process
2se
3and CuInSe
2film, and its performance is characterized.
[2]AmolC.Badgujar,SanjayR.Dhage,ShrikantV.Joshi,Processparameterimpactonpropertiesofsputteredlarge-areaMobilayersforCIGSthinfilmsolarcellapplications,ThinSolidFilms589(2015)79–84.
Essentially describe with sputtering method preparation sputtering CIGS, and have studied the impact of splash-proofing sputtering process parameter on its performance.
[3]Yin-HsienSu,Tsung-WeiChang,Wen-HsiLee,Bae-HengTseng,CharacterizationofCuInSe
2thinfilmsgrownbyphoto-assistedelectrodeposition,ThinSolidFilms535(2013)343–347.
Main description light assist in electrodeposition legal system is for CuInSe
2and the research of photoelectric properties.
[4]ArminE.Zaghi,MarieBuffière,JaseokKoo,GuyBrammertz,MariaBatuk,ChristopheVerbist,JokeHadermann,WooKyoungKim,MarcMeuris,JefPoortmans,JefVleugels,EffectofseleniumcontentofCuInSe
xalloynanopowderprecursorsonrecrystallizationofprintedCuInSe
2absorberlayersduringselenizationheattreatment,ThinSolidFilms582(2015)11–17.
Main description selenizing heat treatment recrystallization is to CuInSe
xthe impact of middle Se content, and performance characterization and formation mechanism study have been carried out to it.
[5]ChaehwanJeong,JinHyeokKim,FabricationofCuInSe
2thinfilmsolarcellwithselenizationofdoublelayeredprecursorsfromCu
2SeandIn
2Se
3binary,ThinSolidFilms550(2014)660–664.
Essentially describe and utilize Cu
2se and In
2se
3two yuan of selenizing legal systems are for CuInSe
2.
[6]MengxiWang,SudipK.Batabyal,HuiMinLim,ZhenggangLi,YengMingLam,FormationofCuIn(S
xSe
1-x)
2microcrystalsfromCuInSe
2nanoparticlesbytwostepsolvothermalmethod,JournalofAlloysandCompounds618(2015)522–526.
Essentially describe two step solvent-thermal methods and prepare CuInSe
2film, and have studied CuIn (S
xse
1-x)
2and CuInSe
2stuctures and properties difference.
[7]Jeng-ShinMa,SubrataDas,Che-YuanYang,Fuh-ShanChen,Chung-HsinLu,Hydrothermally-assistedselenizationofCuInSe
2thinfilmsoncopperfoils,CeramicsInternational40(2014)7555–7560.
Essentially describe and adopt hydro-thermal to assist selenizing legal system for CuInSe
2phase has also carried out pattern and constituent analysis.
[8]JaseokKoo,Chae-WoongKim,ChaehwanJeong,WooKyoungKim,RapidsynthesisofCuInSe
2fromsputter-depositedbilayerIn
2Se
3/Cu
2Seprecursors,ThinSolidFilms582(2015)79–84.
Essentially describe and prepare Cu with sputtering method respectively
2se and In
2se
3, then CuInSe is prepared in two yuan of selenizings
2.
[9]A.Shanmugavel,K.Srinivasan,K.R.Murali,Pulseelectrodepositedcopperindiumsulphoselenidefilmsandtheirproperties,MaterialsScienceinSemiconductorProcessing16(2013)1665–1671.
Essentially describe by pulse electrodeposition legal system for CuIn (S, Se)
2, and its performance is characterized.
[10]F.Caballero-Briones,A.Palacios-Padrós,FaustoSanz,CuInSe
2filmspreparedbythreesteppulsedelectrodeposition.Depositionmechanisms,opticalandphotoelectrochemicalstudies,ElectrochimicaActa56(2011)9556–9567.
Main description three pace pulse electrodeposition processes prepare CuInSe
2, and its structure and morphology is characterized.
Summary of the invention
The present invention existingly prepares copper-indium-selenium optoelectronic film Problems existing to solve, and has invented a kind of method that sulfate system two-step method prepares copper-indium-selenium optoelectronic film.
After the present invention adopts electro-deposition, selenizing legal system is for copper, indium and selenium film, adopts tin dioxide conductive glass to be substrate, with CuSO
45H
2o, In
2(SO
4)
3, SeO
2for raw material, with C
6h
5na
3o
72H
2o is complexing agent, take distilled water as solvent, by fixed molar ratio preparation electric depositing solution, transistor potentiostat is first adopted to prepare precursor thin-film under certain potentials and time, take hydrazine hydrate as reducing agent, in hydrazine hydrate, add selenium powder ensure selenium atmosphere, heat in airtight tube type stove, make precursor thin-film selenizing and obtain target product.
Concrete preparation method of the present invention comprises the step of following order:
A. carrying out the cleaning of tin dioxide conductive glass substrate, is that the glass substrate of 20mm × 20mm puts into volume ratio acetone by size: the solution of distilled water=5:1, Ultrasonic Cleaning 30min; Again substrate is put into ethanol, Ultrasonic Cleaning 30min; In distilled water, glass substrate is used sonic oscillation 30min again; Being emitted in glass dish by glass substrate obtained above sends in baking oven, dries for masking at 100 DEG C.
B. by C
6h
5na
3o
72H
2o, CuSO
45H
2o, In
2(SO
4)
3, SeO
2put into distilled water, obtain uniform and stable electric depositing solution.Specifically, can by 1.0 ~ 2.0 parts of C
6h
5na
3o
72H
2o, 6.8 ~ 13.6 parts of CuSO
45H
2o, 7.0 ~ 14.0 parts of In
2(SO
4)
3, 6.0 ~ 12.0 parts of SeO
2put into the distilled water of 2700.0 ~ 5400.0 parts, make the substance dissolves in solution.
C. electric depositing solution described in step b is poured in three electrode assemblies, take saturated calomel electrode as reference electrode, platinum electrode is auxiliary electrode, tin dioxide conductive glass is Electrode, adopt transistor potentiostat normal temperature deposit film under sedimentation potential is-0.5V, sedimentation time is 30min, and natural drying obtains precursor thin-film sample.
D. be placed on support by step c gained precursor thin-film sample, in hydrazine hydrate, add selenium powder, precursor thin-film sample does not contact with hydrazine hydrate, and precursor thin-film and hydrazine hydrate are put into tube furnace.It is 40.0 ~ 50.0 parts that hydrazine hydrate is put into, and selenium powder is 4.0 ~ 8.0 parts.By between diamond heating to 250 ~ 400 DEG C, temperature retention time 3 ~ 9h, then cool to room temperature takes out.
E. by steps d gains, after making its normal temperature natural drying, copper-indium-selenium optoelectronic film is namely obtained.
The present invention does not need high vacuum condition, and require low to instrument and equipment, production cost is low, and production efficiency is high, is easy to operation.Gained copper-indium-selenium optoelectronic film has good continuity and uniformity, and principal phase is CuInSe
2phase, can realize low cost large-scale industrial production.
Accompanying drawing explanation
Nothing
Embodiment
Embodiment 1
A. the cleaning of tin dioxide conductive glass substrate: carry out cleaning glass substrate as previously mentioned, substrate size is 20mm × 20mm.
B.1.0 part C
6h
5na
3o
72H
2o, 6.8 parts of CuSO
45H
2o, 7.0 parts of In
2(SO
4)
3, 6.0 parts of SeO
2put into the distilled water of 2700.0 parts, make the substance dissolves in solution.
C. above-mentioned electric depositing solution is poured in three electrode assemblies, take saturated calomel electrode as reference electrode, platinum electrode is auxiliary electrode, tin dioxide conductive glass is Electrode, adopt transistor potentiostat normal temperature deposit film under sedimentation potential is-0.5V, sedimentation time is 30min, and natural drying obtains precursor thin-film sample.
D. be placed on support by precursor thin-film sample, in hydrazine hydrate, add selenium powder, precursor thin-film sample does not contact with hydrazine hydrate, and precursor thin-film and hydrazine hydrate are put into tube furnace.It is 40.0 parts that hydrazine hydrate is put into, and selenium powder is 4.0 parts.By diamond heating to 350 DEG C, temperature retention time 6h, then cool to room temperature takes out.
E. by steps d gains, carry out normal temperature natural drying, obtain copper-indium-selenium optoelectronic film.
Claims (4)
1. sulfate system two-step method prepares a method for copper-indium-selenium optoelectronic film, comprises the step of following order:
A. the cleaning of tin dioxide conductive glass substrate;
B. by 1.0 ~ 2.0 parts of C
6h
5na
3o
72H
2o, 6.8 ~ 13.6 parts of CuSO
45H
2o, 7.0 ~ 14.0 parts of In
2(SO
4)
3, 6.0 ~ 12.0 parts of SeO
2put into the distilled water of 2700.0 ~ 5400.0 parts, make the substance dissolves in solution;
C. adopt electrodeposition process to be deposited on electro-conductive glass sheet by solution described in step b and obtain precursor thin-film, natural drying, obtain precursor thin-film sample;
D. be placed on support by step c gained precursor thin-film sample, in hydrazine hydrate, add selenium powder, precursor thin-film sample does not contact with hydrazine hydrate, and precursor thin-film and hydrazine hydrate are put into tube furnace; By between diamond heating to 250 ~ 400 DEG C, temperature retention time 3 ~ 9h, then cool to room temperature takes out;
E. by steps d gains, natural drying, obtains copper-indium-selenium optoelectronic film.
2. a kind of sulfate system two-step method as claimed in claim 1 prepares the method for copper-indium-selenium optoelectronic film, it is characterized in that, clean described in step a, is be 20mm × 20mm by electro-conductive glass substrate size, put into volume ratio acetone: the solution of distilled water=5:1, Ultrasonic Cleaning 30min; Again substrate is put into ethanol, Ultrasonic Cleaning 30min; In distilled water, glass substrate is used sonic oscillation 30min again; Being emitted in glass dish by glass substrate obtained above sends in baking oven, dries for masking at 100 DEG C.
3. a kind of sulfate system two-step method as claimed in claim 1 prepares the method for copper-indium-selenium optoelectronic film, it is characterized in that, described in step c, being added by solution in three electrode assemblies, take saturated calomel electrode as reference electrode, and platinum electrode is auxiliary electrode, tin dioxide conductive glass is Electrode, adopt transistor potentiostat normal temperature deposit film under sedimentation potential is-0.5V, sedimentation time is 30min, and natural drying obtains precursor thin-film sample.
4. a kind of sulfate system two-step method as claimed in claim 1 prepares the method for copper-indium-selenium optoelectronic film, it is characterized in that, puts into 40.0 ~ 50.0 parts of hydrazine hydrates, 4.0 ~ 8.0 parts of selenium powders in tube furnace described in steps d.
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