CN204008038U - 区熔热场线圈冷却水压力及流量测试台 - Google Patents
区熔热场线圈冷却水压力及流量测试台 Download PDFInfo
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- CN204008038U CN204008038U CN201420438606.9U CN201420438606U CN204008038U CN 204008038 U CN204008038 U CN 204008038U CN 201420438606 U CN201420438606 U CN 201420438606U CN 204008038 U CN204008038 U CN 204008038U
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- 239000000498 cooling water Substances 0.000 title claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 82
- 230000000630 rising effect Effects 0.000 claims abstract description 33
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000004857 zone melting Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 206010020852 Hypertonia Diseases 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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CN201420438606.9U CN204008038U (zh) | 2014-08-06 | 2014-08-06 | 区熔热场线圈冷却水压力及流量测试台 |
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CN201420438606.9U CN204008038U (zh) | 2014-08-06 | 2014-08-06 | 区熔热场线圈冷却水压力及流量测试台 |
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CN204008038U true CN204008038U (zh) | 2014-12-10 |
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CN201420438606.9U Expired - Lifetime CN204008038U (zh) | 2014-08-06 | 2014-08-06 | 区熔热场线圈冷却水压力及流量测试台 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109488482A (zh) * | 2018-12-19 | 2019-03-19 | 上海齐耀动力技术有限公司 | 一种斯特林发动机用冷却器流阻测试装置及系统 |
CN110346164A (zh) * | 2019-07-24 | 2019-10-18 | 燕山大学 | 一种线圈振幅与冷却温差并联调控实验装置及方法 |
-
2014
- 2014-08-06 CN CN201420438606.9U patent/CN204008038U/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109488482A (zh) * | 2018-12-19 | 2019-03-19 | 上海齐耀动力技术有限公司 | 一种斯特林发动机用冷却器流阻测试装置及系统 |
CN109488482B (zh) * | 2018-12-19 | 2023-08-29 | 上海齐耀动力技术有限公司 | 一种斯特林发动机用冷却器流阻测试装置及系统 |
CN110346164A (zh) * | 2019-07-24 | 2019-10-18 | 燕山大学 | 一种线圈振幅与冷却温差并联调控实验装置及方法 |
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Effective date of registration: 20181108 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191217 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20141210 |
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