CN203976909U - A kind of ultrahigh vacuum(HHV) cavity for film growth - Google Patents
A kind of ultrahigh vacuum(HHV) cavity for film growth Download PDFInfo
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- CN203976909U CN203976909U CN201420443139.9U CN201420443139U CN203976909U CN 203976909 U CN203976909 U CN 203976909U CN 201420443139 U CN201420443139 U CN 201420443139U CN 203976909 U CN203976909 U CN 203976909U
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Abstract
The utility model belongs to vacuum cavity field of mechanical technique, is specially a kind of ultrahigh vacuum(HHV) cavity for film growth.Its main body is one and goes eight drift angles to form by square cutting, and spherical emptying done in its inside, is configured for the cavity inner wall of film growth; On six square faces of square, be respectively equipped with large flange-interface, run through and be communicated with cavity inner wall; Each cross section is provided with little flange-interface, runs through and is communicated with cavity inner wall.The utility model, the particular design inner little based on spherical cavity inner wall surface area, one processes solderless interface, effectively improved the final vacuum of this ultrahigh vacuum(HHV) cavity, common mechanical pump is in conjunction with the molecular pump of 300L/s pumping speed, and final vacuum can enter 10
-11mbar, reserved flange-interface can meet the demand of most MBE grown growths, has high, the light and handy convenience of final vacuum, space availability ratio advantages of higher.
Description
Technical field
The utility model belongs to vacuum cavity field of mechanical technique, is specifically related to a kind of ultrahigh vacuum(HHV) cavity for film growth.
Background technology
Along with scientific and technical development and progress, thin-film material has been an important branch in materialogy field, and it relates to the aspects such as physics, chemistry, electronics, metallurgy special application.Follow, enter 2 years in scientific research field, utilize the molecular beam epitaxy means all kinds of thin-film materials of growing to study the concern that is also more and more subject to researcher.At present the cavity of common molecular beam epitaxy experimental installation generally all has the interface of a plurality of installation evaporation sources, deposition growing when realizing different element.But if the element (as arsenic, tin etc.) of some high evaporation air pressure of growing can make whole cavity inner wall be polluted, thereby these impurity elements on the wall of chamber have all been sneaked in the thin-film material that causes atomic scale to be grown.Therefore,, to producing the element polluting to molecular beam epitaxial device, the growth of using independent small-sized cavity to carry out film just seems particularly important.
Summary of the invention
The purpose of this utility model is to provide a kind of small volume and less weight, final vacuum is good, space hold rate the is few ultrahigh vacuum(HHV) cavity for film growth.
Ultrahigh vacuum(HHV) cavity for film growth provided by the utility model, its main body is a rescinded angle tetrakaidecahedron 1, and this rescinded angle tetrakaidecahedron 1 is removed eight drift angles and is formed by a square cutting, and the cross section 2 forming after each drift angle cutting is identical; Spherical emptying done in cubes inside, formed the ultrahigh vacuum(HHV) cavity inwall 4 for film growth;
Described square comprises six square faces 3, is respectively equipped with large flange-interface 5 on each square face 3, runs through and is communicated with ultrahigh vacuum(HHV) cavity inwall 4;
Described cross section 2 has eight, and each cross section 2 is provided with little flange-interface 6, runs through and is communicated with ultrahigh vacuum(HHV) cavity inwall 4.
In the utility model, described large flange-interface 5 and little flange-interface 6 include 8 mouthfuls and one helium leak check mouth 9 of 7, one, several retaining threads hole copper washer sealed knife.
In the utility model, described large flange-interface 5 adopts CF100 flange specification, and described little flange-interface 6 adopts CF40 flange specification.
In the utility model, described cross section 2 is equilateral triangle.
In the utility model, cubes material adopts high-purity titanium metal, has the features such as quality is light, material venting rate is little.
In the utility model, consider the space occupancy of number and the cavity itself of the required mounting interface of molecular beam epitaxial device cavity, described cubes is mainly that the square that is 200mm ~ 250mm based on the length of side is for further processing, the spherical radius that cubes inside is emptied is between 90mm ~ 95mm, eight drift angles that described square cutting is gone, be the tetrahedron of rib appearance etc., rib is long is 92.5mm ~ 95mm.
In the utility model, each size in the rescinded angle tetrakaidecahedron can and require to adjust according to actual corresponding equipment.
In the utility model, this ultrahigh vacuum(HHV) cavity is inner, and, one little based on spherical cavity inner wall surface area processes the particular design of solderless interface, effectively improved the final vacuum of this ultrahigh vacuum(HHV) cavity, common mechanical pump is in conjunction with the molecular pump of 300L/s pumping speed, and final vacuum can enter 10
-11mbar.And ultrahigh vacuum(HHV) cavity has been reserved several flange-interfaces, can meet the demand of most MBE grown growths, especially as the cavity of a small-sized MBE grown growth, can perform well in growing and easily pollute the element of cavity.Owing to adopting the design of spherical cavity inwall, reduced the surface-area that contacts with vacuum internal medium, greatly reduce the discharge quantity of material.
Accompanying drawing explanation
Fig. 1 is one-piece construction diagram of the present utility model.
Fig. 2 is internal structure diagram of the present utility model.
Number in the figure: 1 is the rescinded angle tetrakaidecahedron, 2 is cross section, and 3 is square face, and 4 is ultrahigh vacuum(HHV) cavity inwall, and 5 is large flange-interface, and 6 is little flange-interface, and 7 is retaining thread hole, and 8 is the copper washer sealing edge of a knife, 9 is helium leak check mouth.
Embodiment
In order better to understand above-mentioned purpose of the present utility model, below in connection with accompanying drawing, describe the utility model in detail.
In the utility model, described ultrahigh vacuum(HHV) cavity is that the square one based on 200mm * 200mm * 200mm processes, and it is that the spherical of 90mm emptied that radius is taked in inside, has formed the ultrahigh vacuum(HHV) cavity inwall for film growth; The purpose of design of described spherical cavity inwall is in order to reduce the contact surface area of inside cavity and vacuum internal medium, thereby effectively reduces the discharge quantity of material.
On six faces of square, be processed with respectively the CF100 flange-interface of a standard, and run through and be connected with ultrahigh vacuum(HHV) cavity inwall; Described CF100 flange-interface mainly comprises fixedly M8 threaded hole, the CF100 copper washer sealing edge of a knife, CF100 helium leak check mouth.Described helium leak check mouth is for special cavity leak detection.Helium is the non-active gas of density minimum, has very strong diffusibility, and general leak detection step is to spray into helium toward helium leak check mouth, by residual gas analyser or the relevant detector of helium mass spectrum of cavity installation itself, judges the interface of leakage.
Described six reserved CF100 flange-interfaces, can install sample operation platform for MBE grown growing system, molecular pump that pumping speed is 300L/s, 1 and cavity Link Port, 1 observation window mouth, 2 sealing blinds etc. in addition.The molecular pump of the 300L/s that wherein installed is for the utility model is vacuumized, and test result shows that final vacuum can enter 10
-11mbar.
On eight drift angles of square, cutting out respectively a rib length is the tetrahedron of 92.5mm, and at a CF40 flange-interface of each section processing, CF40 flange-interface runs through and is connected with ultrahigh vacuum(HHV) cavity inwall; Described CF40 flange-interface mainly comprises fixedly M6 threaded hole, the CF40 copper washer sealing edge of a knife, CF40 helium leak check mouth;
Described eight reserved CF40 flange-interfaces, can install in bottom 4 for the evaporation source of MBE grown growth, and film thickness gauge, 2 observation windows, 1 sealing blind are installed above.Wherein evaporation source inside can fill element to be grown and it is heated, and film thickness gauge is for measuring the speed of film growth, deposition.
The utility model, whole cavity adopts high-purity titanium metal one to process, and solderless interface has the features such as quality is light, material venting rate is little.
The utility model, adopts the design of spherical cavity inwall, has reduced the surface-area that contacts with vacuum internal medium, greatly reduces the discharge quantity of material.
The utility model, whole cavity adopts one to process, and without any soldering opening, has improved the final vacuum of this ultrahigh vacuum(HHV) cavity, and common mechanical pump is in conjunction with the molecular pump of 300L/s pumping speed, and final vacuum can enter 10
-11mbar.Metal can be sneaked in various degree impurity in welding process when metallic high temperature melting, so common metal soldering opening is exitted more serious in vacuum environment.
Claims (5)
1. for a ultrahigh vacuum(HHV) cavity for film growth, it is characterized in that main body is a rescinded angle tetrakaidecahedron (1), this rescinded angle tetrakaidecahedron (1) is removed eight drift angles and is formed by a square cutting, and the cross section (2) forming after each drift angle cutting is identical; Spherical emptying done in cubes inside, formed the ultrahigh vacuum(HHV) cavity inwall (4) for film growth;
Described square comprises six square faces (3), is respectively equipped with large flange-interface (5) on each square face (3), runs through and is communicated with ultrahigh vacuum(HHV) cavity inwall (4);
Described cross section (2) has eight, and each cross section (2) are provided with little flange-interface (6), runs through and is communicated with ultrahigh vacuum(HHV) cavity inwall (4).
2. the ultrahigh vacuum(HHV) cavity for film growth as claimed in claim 1, it is characterized in that described large flange-interface (5) and little flange-interface (6) include several retaining threads hole (7), a copper washer sealed knife (8) mouth and a helium leak check mouth (9).
3. the ultrahigh vacuum(HHV) cavity for film growth as claimed in claim 1, is characterized in that described cross section (2) is for equilateral triangle.
4. the ultrahigh vacuum(HHV) cavity for film growth as claimed in claim 1, is characterized in that described large flange-interface (5) adopts CF100 flange specification, and described little flange-interface (6) adopts CF40 flange specification.
5. the ultrahigh vacuum(HHV) cavity for film growth as claimed in claim 1, is characterized in that described cubes material is high-purity titanium metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420443139.9U CN203976909U (en) | 2014-08-07 | 2014-08-07 | A kind of ultrahigh vacuum(HHV) cavity for film growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420443139.9U CN203976909U (en) | 2014-08-07 | 2014-08-07 | A kind of ultrahigh vacuum(HHV) cavity for film growth |
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| Publication Number | Publication Date |
|---|---|
| CN203976909U true CN203976909U (en) | 2014-12-03 |
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| CN201420443139.9U Active CN203976909U (en) | 2014-08-07 | 2014-08-07 | A kind of ultrahigh vacuum(HHV) cavity for film growth |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108560045A (en) * | 2018-06-11 | 2018-09-21 | 南京大学 | A kind of octahedral ultrahigh vacuum cavity |
-
2014
- 2014-08-07 CN CN201420443139.9U patent/CN203976909U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108560045A (en) * | 2018-06-11 | 2018-09-21 | 南京大学 | A kind of octahedral ultrahigh vacuum cavity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: FEIMIAN INSTRUMENT (SHANGHAI) CO., LTD. Free format text: FORMER OWNER: FERMI INSTRUMENT (SHANGHAI) CO., LTD. Effective date: 20150811 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150811 Address after: 200000 1A04 room, No. three, No. 561, Shanghai Patentee after: FERMI INSTRUMENTS (SHANGHAI) CO., LTD. Address before: 201203 Shanghai City, Pudong New Area Zhangjiang hi tech park Zuchongzhi Road No. 1077 Building 2 room 1164 Patentee before: Fermi Instrument Technology (Shanghai) Co., Ltd. |