CN203895414U - Plasma etching machine - Google Patents
Plasma etching machine Download PDFInfo
- Publication number
- CN203895414U CN203895414U CN201420235205.3U CN201420235205U CN203895414U CN 203895414 U CN203895414 U CN 203895414U CN 201420235205 U CN201420235205 U CN 201420235205U CN 203895414 U CN203895414 U CN 203895414U
- Authority
- CN
- China
- Prior art keywords
- plasma etching
- business
- etching platform
- electrostatic chuck
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The utility model provides a plasma etching machine, comprising a reaction cavity; a top tray arranged on the top of the reaction cavity; a radial trunking antenna arranged on the top tray; a pulse inductance coupling coil arranged on the top tray; and a static sucker arranged on the bottom of the reaction cavity. With the plasma etching machine provided by the utility model, the radial trunking antenna is used for etching technology, so as to reduce the damage degree of the surface of a substrate/wafer, meanwhile, good etching control degree of a dense area and a sparse area and excellent linewidth roughness are reached through using the pulse inductance coupling coil.
Description
Technical field
The utility model relates to ic manufacturing technology field, particularly a kind of plasma etching platform.
Background technology
In in the past 40 years, plasma dry etch process is being played the part of very important role in the semiconductor integrated circuit field of manufacturing always.Logical product and memory device can obtain more and more higher performance on the basis that does not increase power consumption, the manufacture of these high-performance and products with larger capacity, just depending on to a great extent plasma etching technology can be to the heart of integrated circuit---gate electrode, realizing precision controls accurately, can obtain vertical pattern control to the interconnection of integrated circuit and deep etching, thereby, make transistor be overcome a series of restrictions, continue micro according to Moore's Law.
Along with integrated circuit enters 45nm and with lower node, on unit wafer, the increase of chip density needs integrated more device, trench features size (Critical Dimension, CD) width will further dwindle, and the degree of depth can not continue micro, as a result, the depth-to-width ratio of groove (Aspect Ratio, AR) constantly increases.Therefore, adopt conventional plasma process to realize high-aspect-ratio (High Aspect Ratio, HAR) etching of groove will face increasing difficulty, depth-to-width ratio such as uniformity, micro loading effect and etching relies on effect (Aspect Ratio Depended Effect, ARDE) etc.
Especially, for ARDE effect, because etching speed and depth-to-width ratio have strong dependence effect, in the highly dense region of live width (Dense) because have a less live width size, relatively high gash depth, causes the relative sparse region of etching speed (ISO) to reduce rapidly.In the time will all ensureing to etch into desired depth on whole wafer, when sparse region etching complete and in the close quarters situation that etching does not complete yet, if substrate is selected than not sufficiently high words, continue etching and will cause the part that has completed etching to occur over etching.Therefore, the different etching degree of control device close quarters and device sparse region becomes extremely important.
In addition, the degree of injury of the substrate/crystal column surface after line width roughness (Line Width Roughness, LWR) and the etching etching, for etching technics, is all very important evaluation index.But, the performance of existing etching machine bench on above-mentioned parameter is not good, therefore, need badly and provide a kind of plasma etching platform to reach the degree of injury of the etching control degree of better close quarters and sparse region, more excellent line width roughness and lower substrate/crystal column surface.
Utility model content
The purpose of this utility model is to provide a kind of plasma etching platform, is difficult to reach the problem of the degree of injury of the etching control degree of good close quarters and sparse region, preferably line width roughness and lower substrate/crystal column surface to solve existing plasma etching platform.
For solving the problems of the technologies described above, the utility model provides a kind of plasma etching platform, and described plasma etching platform comprises: reaction chamber; Be arranged at taking over a business of described reaction chamber top; Radial transmission line slot antenna on taking over a business described in being arranged at; Pulse inductance-coupled coil on taking over a business described in being arranged at; And be arranged at the electrostatic chuck of described reaction chamber bottom.
Optionally, in described plasma etching platform, also comprise the pulse power, the described pulse power is connected with described electrostatic chuck.
Optionally, in described plasma etching platform, the frequency of the described pulse power is 100KHz～100MHz.
Optionally, in described plasma etching platform, described radial transmission line slot antenna, pulse inductance-coupled coil and the pulse power can be by synchronous or asynchronous unlatchings.
Optionally, in described plasma etching platform, also comprise shower tray, on taking over a business described in described shower tray is fixed on.
Optionally, in described plasma etching platform, the material of described shower tray is quartz.
Optionally, in described plasma etching platform, described electrostatic chuck is divided into multiple independent temperatures district.
Optionally, in described plasma etching platform, the temperature regulating range in each independent temperature district is 0 DEG C～200 DEG C.
Optionally, in described plasma etching platform, described in the distance of taking over a business between electrostatic chuck can regulate.
Optionally, in described plasma etching platform, described in take over a business the distance between electrostatic chuck adjustable range be 10mm～50mm.
In the plasma etching platform providing at the utility model, can make the degree of injury of substrate/crystal column surface lower by using radial transmission line slot antenna to carry out etching technics; Meanwhile, by using pulse inductance-coupled coil can reach the etching control degree of good close quarters and sparse region and line width roughness preferably.
Brief description of the drawings
Fig. 1 is the structural representation of the plasma etching platform of the utility model embodiment.
Embodiment
Below in conjunction with the drawings and specific embodiments, the plasma etching platform the utility model proposes is described in further detail.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of aid illustration the utility model embodiment lucidly.
Please refer to Fig. 1, it is the structural representation of the plasma etching platform of the utility model embodiment.As shown in Figure 1, in the embodiment of the present application, described plasma etching platform 1 comprises: reaction chamber (not shown in figure 1); What be arranged at described reaction chamber top takes over a business 10; Described in being arranged at, take over a business the radial transmission line slot antenna (Radial Line Slot Antenna, RLSA) 11 on 10; Described in being arranged at, take over a business the pulse inductance-coupled coil 12 on 10; And be arranged at the electrostatic chuck 13 of described reaction chamber bottom.
In the embodiment of the present application, in the time carrying out etching technics, wafer 2 to be etched is placed on electrostatic chuck 13, then, just can opens radial transmission line slot antenna 11 and/or pulse inductance-coupled coil 12, to realize the etching for wafer 2 to be etched.Concrete, described radial transmission line slot antenna 11 can be dissociated into etching gas gas slurry form, and gas slurry is evenly distributed in to the surface of described wafer to be etched 2, thereby can make the degree of injury on wafer to be etched 2 surfaces in etching process lower; Meanwhile, to the good severity control ability of etching gas, can realize the etching control degree of good close quarters and sparse region and line width roughness preferably by described pulse inductance-coupled coil 12.Thus, by coordinating between described radial transmission line slot antenna 11 and pulse inductance-coupled coil 12, the etching control degree that can make the degree of injury on wafer to be etched 2 surfaces lower, to reach good close quarters and sparse region and preferably line width roughness.
In the embodiment of the present application, described plasma etching platform 1 also comprises the pulse power 14, and the described pulse power 14 is connected with described electrostatic chuck 13.The frequency of the described pulse power 14 is 100KHz～100MHz, and for example, the frequency of the described pulse power 14 is 13.56MHz, 2MHz, 40MHz or 60MHz etc.At this, described radial transmission line slot antenna 11, pulse inductance-coupled coil 12 and the pulse power 14 can be opened simultaneously or respectively.Wherein, in the time of described pulse inductance-coupled coil 12 and the pulse power 14 synchronous unlatching, described plasma etching platform 1 can be realized lock-out pulse etching; In the time of described pulse inductance-coupled coil 12 and the asynchronous unlatching of the pulse power 14, described plasma etching platform 1 can be realized asynchronous pulse etching.Comparatively speaking, in the time that described plasma etching platform 1 is realized asynchronous pulse etching, it has better severity control ability for etching gas, can realize the etching control degree of better close quarters and sparse region and more excellent line width roughness.
Further, described plasma etching platform 1 also comprises shower tray 15, described in described shower tray 15 is fixed on, takes over a business on 10.The material of described shower tray 15 can be quartz.Concrete, described shower tray 15 can be formed by following mode: a monoblock quartz disk is provided; On described monoblock quartz disk, form multiple holes, thereby form shower tray 15.In the embodiment of the present application, in the time using synchronous or asynchronous pulse etching, can carry out UV-irradiation through described shower tray 15 to wafer 2 to be etched by ultraviolet (UV) light simultaneously.By carry out UV-irradiation simultaneously, can make wafer 2 to be etched obtain more excellent line width roughness.
In the embodiment of the present application, described electrostatic chuck 13 is divided into multiple independent temperatures district.Wherein, the temperature regulating range in each independent temperature district is 0 DEG C～200 DEG C.Temperature has a certain impact for etching efficiency tool, at this, by electrostatic chuck 13 being divided into multiple independent temperatures district, the etch amount of the wafer to be etched 2 in the each independent temperature of the control of refinement district more, thus further make the degree of injury on wafer to be etched 2 surfaces lower, the etching control degree that reaches good close quarters and sparse region and line width roughness preferably.
Further, described in, take over a business 10 and electrostatic chuck 13 between distance can regulate.Preferably, described in, take over a business 10 and electrostatic chuck 13 between the adjustable range of distance be 10mm～50mm.By described take over a business 10 and electrostatic chuck 13 between the adjusting of distance, can realize the adjusting of the distance between described radial transmission line slot antenna 11 and electrostatic chuck 13.Starch whether good in the uniformity on described wafer to be etched 2 surfaces because the distance between described radial transmission line slot antenna 11 and described electrostatic chuck 13 can affect formed gas, therefore, in order to meet the demand of different process, in the embodiment of the present application, described take over a business 10 and electrostatic chuck 13 between distance can regulate, especially, described in, take over a business 10 and electrostatic chuck 13 between the adjustable range of distance be preferably 10mm～50mm.
As fully visible, in the plasma etching platform providing at the utility model embodiment, can make the degree of injury of substrate/crystal column surface lower by using radial transmission line slot antenna to carry out etching technics; Meanwhile, by using pulse inductance-coupled coil can reach the etching control degree of good close quarters and sparse region and line width roughness preferably.
Foregoing description is only the description to the utility model preferred embodiment; the not any restriction to the utility model scope; any change, modification that the those of ordinary skill in the utility model field does according to above-mentioned disclosure, all belong to the protection range of claims.
Claims (10)
1. a plasma etching platform, is characterized in that, comprising: reaction chamber; Be arranged at taking over a business of described reaction chamber top; Radial transmission line slot antenna on taking over a business described in being arranged at; Pulse inductance-coupled coil on taking over a business described in being arranged at; And be arranged at the electrostatic chuck of described reaction chamber bottom.
2. plasma etching platform as claimed in claim 1, is characterized in that, also comprises the pulse power, and the described pulse power is connected with described electrostatic chuck.
3. plasma etching platform as claimed in claim 2, is characterized in that, the frequency of the described pulse power is 100KHz～100MHz.
4. plasma etching platform as claimed in claim 2, is characterized in that, described radial transmission line slot antenna, pulse inductance-coupled coil and the pulse power can be by synchronous or asynchronous unlatchings.
5. plasma etching platform as claimed in claim 1, is characterized in that, also comprises shower tray, on taking over a business described in described shower tray is fixed on.
6. plasma etching platform as claimed in claim 5, is characterized in that, the material of described shower tray is quartz.
7. the plasma etching platform as described in any one in claim 1～6, is characterized in that, described electrostatic chuck is divided into multiple independent temperatures district.
8. plasma etching platform as claimed in claim 7, is characterized in that, the temperature regulating range in each independent temperature district is 0 DEG C～200 DEG C.
9. the plasma etching platform as described in any one in claim 1～6, is characterized in that, described in the distance of taking over a business between electrostatic chuck can regulate.
10. plasma etching platform as claimed in claim 9, is characterized in that, described in take over a business the distance between electrostatic chuck adjustable range be 10mm～50mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420235205.3U CN203895414U (en) | 2014-05-08 | 2014-05-08 | Plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420235205.3U CN203895414U (en) | 2014-05-08 | 2014-05-08 | Plasma etching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203895414U true CN203895414U (en) | 2014-10-22 |
Family
ID=51721777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420235205.3U Expired - Fee Related CN203895414U (en) | 2014-05-08 | 2014-05-08 | Plasma etching machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203895414U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107856041A (en) * | 2016-09-22 | 2018-03-30 | 欣兴电子股份有限公司 | Acetabula device and element transfer method |
| CN116959947A (en) * | 2023-09-21 | 2023-10-27 | 青禾晶元(天津)半导体材料有限公司 | Plasma etching device and method for etching carbon film |
-
2014
- 2014-05-08 CN CN201420235205.3U patent/CN203895414U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107856041A (en) * | 2016-09-22 | 2018-03-30 | 欣兴电子股份有限公司 | Acetabula device and element transfer method |
| CN107856041B (en) * | 2016-09-22 | 2021-04-20 | 欣兴电子股份有限公司 | Suction cup device and element transfer method |
| CN116959947A (en) * | 2023-09-21 | 2023-10-27 | 青禾晶元(天津)半导体材料有限公司 | Plasma etching device and method for etching carbon film |
| CN116959947B (en) * | 2023-09-21 | 2023-12-08 | 青禾晶元(天津)半导体材料有限公司 | Plasma etching device and method for etching carbon film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8574447B2 (en) | Inorganic rapid alternating process for silicon etch | |
| JP5557843B2 (en) | Silicon etching method and apparatus with passivation using chemical vapor deposition | |
| JP6219558B2 (en) | Etching process for 3D flash structures | |
| KR100686763B1 (en) | Focus ring, plasma etching apparatus and plasma etching method | |
| CN203895414U (en) | Plasma etching machine | |
| CN103400800A (en) | Bosch etching method | |
| CN102751160A (en) | Etching device and corresponding etching method | |
| CN102610560B (en) | Method for modifying appearances of side walls of through holes | |
| CN103854972B (en) | The method improving crystal column surface warpage | |
| CN108417487A (en) | The process of groove-shaped shield grid power device | |
| CN105934814B (en) | The rinse bath of semiconductor crystal wafer and the manufacturing method for being bonded wafer | |
| CN105632860A (en) | Plasma processing equipment | |
| CN103700622B (en) | The forming method of silicon through hole | |
| CN108573867A (en) | Silicon deep hole lithographic method | |
| CN103413779B (en) | Silicon etching method for forming through hole | |
| CN101894750A (en) | Method for carrying out dry etching on TaN electrode | |
| CN105374737B (en) | Etching process mesoporous bottom is inhibited the method for notch, the forming method in hole occur | |
| CN102054665A (en) | Method for processing epitaxial substrate | |
| CN105097494B (en) | Lithographic method | |
| CN203481182U (en) | Etching equipment | |
| CN104752266A (en) | Through-silicon-via etching device | |
| CN103077920A (en) | Dry etching method of improving horizontal opening of through silicon hole | |
| CN103295883B (en) | Improve the method for critical size load effect | |
| CN105405763B (en) | The manufacturing method of groove-shaped super junction power device | |
| CN104078416B (en) | Forming method of through silicon via layout structure and through silicon via interconnecting structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141022 Termination date: 20190508 |