CN203870589U - Circuit element - Google Patents
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- CN203870589U CN203870589U CN201420172401.0U CN201420172401U CN203870589U CN 203870589 U CN203870589 U CN 203870589U CN 201420172401 U CN201420172401 U CN 201420172401U CN 203870589 U CN203870589 U CN 203870589U
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Abstract
The utility model provides a circuit element. The circuit element has light transmittance and comprises a transparent substrate, a first transparent barrier layer, a first patterned conducting layer and a second conducting layer. The transparent substrate is provided with a first surface. The first transparent barrier layer is arranged on the first surface of the transparent substrate. The first patterned conducting layer is arranged on the first transparent barrier layer. The second conducing layer is arranged on the side, opposite to the first surface, of the transparent substrate. According to the circuit element, the transparent barrier layer is additionally arranged between the transparent substrate and the conducing layer so that when the conducting layer on one side of the transparent substrate is patterned in the etching process, the other conducting layer located on the side opposite to the transparent substrate can be prevented from being damaged by lasers or heat energy, and the problem that the element is prone to damage in the etching process can be effectively solved.
Description
Technical field
The utility model relates to circuit component, and relates to especially one and be suitable for being applied in the circuit component of contact panel.
Background technology
In the light transmission circuit components such as traditional contact panel, liquid crystal display, solar cell, special form and photoelectric device, the method for making that adopts laser etching technology to form pattern conductive film is widely used.To make capacitance type touch-control panel as example, in the manufacturing process of capacitance type touch-control panel, need to utilize sputtering method, form upper strata conducting film, lower floor's conducting film on relative two surfaces of transparency carrier respectively, recycling laser etching technology carries out respectively patterning to form the conductive layer of patterning to upper strata conducting film and lower floor's conducting film, is also the sensing electrode of contact panel.
But, when the process of carrying out laser-induced thermal etching to being arranged on transparency carrier upper surface layer conducting film, laser or heat energy are easy to penetrate transparency carrier and are damaged to and are positioned under transparency carrier lower surface layer conducting film, otherwise, when when being positioned under transparency carrier lower surface a layer conducting film and carrying out laser-induced thermal etching, same upper strata conducting film also can sustain damage.Although, have prior art to propose, can by the distance of adjusting laser condensing lens or double-sided conductive film, avoid conducting film to be subject to the damage of laser or heat energy.But, by the conducting film a bit laser and the comparatively responsive material of heat energy being formed, still cannot utilize the method for above-mentioned adjustment distance to avoid conducting film to suffer the destruction of laser-induced thermal etching processing procedure for one.
In view of this, be still necessary to propose a kind of advanced person's circuit component structure, and solve the yield decline problem that double-sided conductive film etch process causes.
Utility model content
The utility model proposes a kind of circuit component, to promote the element yield of conducting film etch process.
For reaching above-mentioned purpose or other technologies advantage, one of the utility model embodiment proposes a kind of circuit component, has light transmission, comprises transparency carrier, the first transparent barrier-layer, the first patterned conductive layer and the second conductive layer.Above-mentioned transparency carrier has first surface.Above-mentioned the first transparent barrier-layer is disposed on first surface.Above-mentioned the first patterned conductive layer is disposed on the first transparent barrier-layer.The second conductive layer is disposed at one of the relative first surface of transparency carrier side.
In sum, the utility model is between transparency carrier and conductive layer, additional configuration transparent barrier-layer, to avoid etch process when the conductive layer of one of patterned transparent substrate side, be damaged to laser or with heat energy another conductive layer that is positioned at the relative side of transparency carrier, can effectively improve the problem that etch process easily causes element damage.
Brief description of the drawings
The process structure diagrammatic cross-section that Figure 1A to 1H is the circuit component that illustrated according to one of the utility model embodiment.
The structural representation that Fig. 2 is the circuit component that illustrated according to another embodiment of the utility model.
The structural representation that Fig. 3 is the circuit component that illustrated according to another embodiment of the utility model.
Main element symbol description:
100,200,300: circuit component
110: transparency carrier
110S1: first surface
110S2: second surface
122: the first transparent barrier-layers
124: the second transparent barrier-layers
132: the first conductive layers
133: the first patterned conductive layers
134: the second conductive layers
135: the second patterned conductive layers
142: the first transparent covering layers
144: the second transparent covering layers
152: the first conductive traces
154: the second conductive traces
160: flexible circuit board
172: tack coat
174: protective clear layer
180: black-matrix layer
190: transparent cover plate
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail.
The process structure diagrammatic cross-section that Figure 1A to 1H is the circuit component 100 that illustrated according to one of the utility model embodiment.First the method for making of circuit component 100 comprises the steps:, transparency carrier 110 is provided, and wherein, transparency carrier 110 has first surface 110S1 and the second surface 110S2 with respect to first surface 110S1, as shown in Figure 1A; Then, form the first transparent barrier-layer 122 in first surface 110S1, and form the second transparent barrier-layer 124 in second surface 110S2, as shown in Figure 1B.
Above-mentioned transparency carrier 110 can be the glass substrate of light transmission or have flexual printing opacity plasticizing base material or other have the light transmission base material of insulation function.The wherein material of printing opacity plasticizing base material, can comprise polyethylene terephthalate (Polyethylene Terephthalate, PET), cyclic olefin polymer (Cyclo-olefin polymer, COP), the polymkeric substance of polyimide (Polyimide, PI) or other light-permeables.Above-mentioned the first transparent barrier-layer 122 and the second transparent barrier-layer 124 can be, heat energy restraining barrier, laser restraining barrier or the combination of the two.Therefore, among embodiment more of the present utility model, form the material of above-mentioned the first transparent barrier-layer 122 and the second transparent barrier-layer 124, can be selected from by transparent optical cement (, Optical Clear Adhhesive, OCA), transparent photoresistance, transparent resin and aforementioned arbitrary combination one of form group.Among the present embodiment, transparency carrier 110 is made up of polyethylene terephthalate, and the first transparent barrier-layer 122 and the second transparent barrier-layer 124 are made up of transparent optical cement.
After forming the first transparent barrier-layer 122 and the second transparent barrier-layer 124, on the first transparent barrier-layer 122, form the first conductive layer 132; And on the second transparent barrier-layer 124, form the second conductive layer 134 (please refer to Fig. 1 C).And according to the material that forms the first conductive layer 132 and the second conductive layer 134, the first conductive layer 132 can comprise different fabrication steps from the formation of the second conductive layer 134.
Among embodiment more of the present utility model, the material that forms the first conductive layer 132 and the second conductive layer 134 can be tin indium oxide (indium tin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO), aluminum zinc oxide (aluminum zinc oxide, AZO) or other applicable transparent conductive materials.On the first transparent barrier-layer 122 and the second transparent barrier-layer 124, form respectively the first conductive layer 132 and second conductive layer 134 of one whole property in the mode of sputter or deposition.
Among other embodiment of the present utility model, the material that forms the first conductive layer 132 and the second conductive layer 134 can be to comprise conductive nano filament, for example, and development, gold nanowire, CNT or nano copper wire.Due to the first conductive layer 132 and the second conductive layer 134; for coating in advance the first transparent covering layer 142 and the second transparent covering layer 144 (is diaphragm (overcoat; be called for short OC)) upper, conductive nano filament is evenly distributed in the first transparent covering layer 142 and the second transparent covering layer 144.The first transparent covering layer 142 and the second transparent covering layer 144 can shield to being distributed in its inner conductive nano silk, to avoid it oxidized.Wherein, the first transparent covering layer 142 and the second transparent covering layer 144, better can be silicon dioxide, silicon nitride, silicon oxynitride, or printing opacity plasticizing material.And other similar materials are also not subject to the limits.Therefore, form the mode of the first conductive layer 132 and the second conductive layer 134, can comprise the first conductive layer 132 is directly laid on the first transparent barrier-layer 122 together with the first transparent covering layer 142; And the second conductive layer 134 is directly laid on the second transparent barrier-layer 124 together with the second transparent covering layer 144.In follow-up making step, all with the first conductive layer 132 of development formation and illustrating of the second conductive layer 134, but the utility model is not as limit.
Refer to Fig. 1 D.Next, utilize micro image etching procedure, remove at least one lateral edges of part the first conductive layer 132 and part the first transparent covering layer 142, and remove at least one lateral edges of part the second conductive layer 134 and part the second transparent covering layer 144, to expose part the first transparent barrier-layer 122 and part the second transparent barrier-layer 124.And on the first transparent barrier-layer 122 exposing and the second transparent barrier-layer 124, form respectively a plurality of the first conductive traces (metal trace) 152 and a plurality of the second conductive traces 154.Wherein, above-mentioned the first conductive layer 132 and the first transparent covering layer 142 are close to the first conductive trace 152, and the first conductive layer 132 is electrically connected at the first conductive trace 152.The second conductive layer 134 and the second transparent covering layer 144 are close to the second conductive trace 154, and the second conductive layer 134 is electrically connected at the second conductive trace 154.Above-mentioned a plurality of the first transparent trace 152 is except can be used as the perimeter circuit of the flexible electric circuit board that is electrically connected the first conductive layer 132 and subsequent configuration, and a plurality of the second conductive traces 154, except can be used as to be electrically connected the perimeter circuit of the second conductive layer 134 and flexible electric circuit board, all also can be used as the contraposition target of follow-up laser-induced thermal etching processing procedure.Among embodiment more of the present utility model, a plurality of the first conductive traces 152 and a plurality of the second conductive traces 154, can be by screen printing technology, print respectively the part of elargol outside part the first transparent barrier-layer 122 is exposed to part the second transparent barrier-layer 124 and form.And among other embodiment of the present utility model, a plurality of the first conductive traces 152 and a plurality of the second conductive traces 154, can be by the mode of metal level deposition and patterning, be formed at respectively part the first transparent barrier-layer 122 and be exposed in outer part and form with part the second transparent barrier-layer 124.
After completing transparent barrier-layer, conductive layer and transparent covering layer, utilize laser etching technology, remaining part the first conductive layer 132 and part the second conductive layer 134 are carried out to patterning process.Because laser etching technology is with respect to photolithography techniques, there is the characteristics such as high directional stability and high power, can simplify processing procedure, and reduce environmental pollution.Therefore,, among the present embodiment, better employing laser etching technology, comes patterning the first conductive layer 132 and the second conductive layer 134.
Utilize the step of laser-induced thermal etching processing procedure patterning the first conductive layer 132 and the second conductive layer 134 as follows, refer to Fig. 1 E to 1F.First adjusting focal length, the first conductive layer 132 and the first transparent covering layer 142 partly in the very first time with Ear Mucosa Treated by He Ne Laser Irradiation part, form the first patterned conductive layer 133 to remove irradiated part the first conductive layer 132, common irradiated part the first transparent covering layer 142 still exists and can not be removed, as shown in Fig. 1 E.Recycling laser, the second transparency conducting layer 134 that irradiates part in the second time forms the second patterned conductive layer 135 with the second transparent covering layer 144 of part, remove irradiated part the second conductive layer 134, common irradiated part the second transparent covering layer 144 still exists and can not be removed, as shown in Fig. 1 F.Can be according to design needs, wherein the above-mentioned very first time can be same as or be different from the second time, also the first patterned conductive layer 133 with the second patterned conductive layer 135 can form or substep formation simultaneously.
It is worth mentioning that, above-mentioned the first patterned conductive layer 133 and the second patterned conductive layer 135, the two has at least a part mutually to overlap, so that produce capacity effect.Therefore foregoing circuit element 100 is for example a projecting type capacitor formula contact panel.Wherein, transparency carrier 110 threes of the first patterned conductive layer 133, the second patterned conductive layer 135 and insulation can form at least one capacity cell.But the range of application of circuit component 100 is as limit, among other embodiment of the present utility model, foregoing circuit element 100 can be for example at least one membrane transistor.Therefore, the first patterned conductive layer 133, the second patterned conductive layer 135 and be formed at the first patterned conductive layer 133 and the second patterned conductive layer 135 between insulation transparent substrate 110 and channel semiconductor layer (not illustrating) can form this at least one membrane transistor.
As previously mentioned, because the first transparent barrier-layer 122 and the second transparent barrier-layer 124 have the function that stops heat energy and laser penetration, therefore, in the time utilizing laser-induced thermal etching the first transparency conducting layer 132, be arranged at the first transparent barrier-layer 122 between the first conductive layer 132 and transparency carrier 110 and be arranged at the second transparent barrier-layer 124 between the second conductive layer 134 and transparency carrier, can stop laser penetration to cross transparency carrier 110 and be damaged to the second transparency conducting layer 134 of transparency carrier 110 another sides, heat loss the second conductive layer 134 that also can avoid laser to produce.In addition, in the time utilizing laser-induced thermal etching the second conductive layer 134, the first transparent barrier-layer 122 and the second transparent barrier-layer 124, also can be used for stopping that laser penetration crosses transparency carrier 110 and be damaged to first conductive layer 132 (or being the first patterned conductive layer 133) of transparency carrier 110 another sides.But it should be noted that, the first transparent barrier-layer 122 in the utility model and the second transparent barrier-layer 124 are suitable for stopping that wavelength essence is less than the laser beam of 390 nanometers (nm), but can allow the visible ray of wavelength essence between 390 nanometer to 700 nanometers to pass through, so that circuit component 100 is applicable to be combined with display device, as the input equipment of display device.The thickness of above-mentioned the first transparent barrier-layer 122 and the second transparent barrier-layer 124 be in fact between 1 micron to 20 microns (μ m) between, be preferably between 2 microns to 10 microns.
In addition, it should be noted that again, can only on the surface of transparency carrier 110 1 sides, transparent barrier-layer be set, for example, if transparency carrier 110 only one side arranges transparent barrier-layer (only in first surface 110S1, the first transparent barrier-layer 122 being set), but not on two relative two surfaces of transparency carrier 110, transparent barrier-layer is all set, also can reach above-mentioned effect.Among an embodiment of the present utility model, when circuit component 100 is only in the time that first surface 110S1 arranges the first transparent barrier-layer 122, for reaching the object that stops damage from laser the second conductive layer 134, need the thickness of suitable increase the first transparent barrier-layer 122.Therefore, the first transparent barrier-layer 122 preferred thickness range now essence between 2 microns to 40 microns.The method for making that the circuit component of transparent barrier-layer is only set on the surface of transparency carrier 110 1 sides can, with reference to previous embodiment, repeat no more.
In addition, can be according to the concrete structure of circuit component and purposes, only need laser-induced thermal etching the first conductive layer 132 and second conductive layer 134 one of them layer, make it form patterned conductive layer, and another layer of conductive layer can be the planar structure of whole layer, without etching.Among an embodiment of the present utility model, for example, when the circuit component of the utility model is applied in contact panel, after the first conductive layer 132 patternings, form the first patterned conductive layer 133, can be used as the touch-control sensing electrode of contact panel, and the second conductive layer 134 can be a whole layer plane structure, to use as electro-magnetic screen layer.Its corresponding flow process of making, compared with previous embodiment, can be omitted the step of laser-induced thermal etching the second conductive layer 134, and other step is basic identical, therefore repeat no more.So, at laser-induced thermal etching the first conductive layer 132, when forming the first patterned conductive layer 133, the first transparent barrier-layer 122 and/or the second transparent barrier-layer 124 still can stop damage from laser the second conductive layer 134, reach effect of the present utility model.
In addition, the circuit component 100 of the utility model, more comprises a flexible circuit board 160, as shown in Figure 1 G.Wherein, flexible circuit board 160 can be formed at one of transparency carrier 110 side, and is electrically connected the first patterned conductive layer 133 and the second patterned conductive layer 135 through the first conductive trace 152 and the second conductive trace 154 respectively.
Follow-up, please refer to Fig. 1 H, form transparent cover plate 190, be disposed at the first transparent covering layer 142 with respect to one of the first conductive layer 132 after patterning side.Concrete, transparent cover plate 190 can see through tack coat 172 and adhere on the first transparent covering layer 142.Tack coat 172 further can be covered in a plurality of the first conductive trace 152 tops.And form protective clear layer 174 on the second transparent covering layer 144, and be covered in a plurality of the second conductive trace 154 tops.In addition, also can form black matrix" (Black Matrix is called for short BM) layer 180, be covered in a plurality of the first conductive trace 152 tops, use and cover the first conductive trace 152.Wherein, black-matrix layer 180 is for example configurable in the surface of transparent cover plate 190 contiguous tack coats 172.The wherein material of above-mentioned tack coat 172 can be transparent optical cement.Above-mentioned protective clear layer 174 can be polyimide insulative layer (PI Thermal dielectric layer), printing opacity plasticizing material layers or other similar material layers.
The structure of the circuit component 100 forming according to the manufacture method of the circuit component of one of the utility model embodiment is as shown in Fig. 1 H.The circuit component 100 of the utility model, there is light transmission, comprising: transparency carrier 110, the first transparent barrier 122, the second transparent barrier 124, the first patterned conductive layer 133, the second patterned conductive layer 135, the first transparent covering layer 142 and the second transparent covering layer 144.
Above-mentioned transparency carrier 110 comprises the second surface 110S2 of first surface 110S1 and relative first surface 110S1.Above-mentioned the first transparent barrier 122 is disposed at first surface 110S1, and the first patterned conductive layer 133 is disposed on the first transparent barrier 122, and the first transparent covering layer 142 is disposed on the first patterned conductive layer 133.Above-mentioned the second transparent barrier 124 is disposed at the second surface 110S2 of transparency carrier 110, and the second patterned conductive layer 135 is disposed at one of the relative first surface 110S1 of transparency carrier 110 side, therefore the second transparent barrier 124 is more disposed between transparency carrier 110 and the second patterned conductive layer 135.And, above-mentioned the second transparent covering layer 144 be disposed at the second patterned conductive layer 135 away from one of transparency carrier 110 side.The material of above-mentioned the first patterned conductive layer 133 and the second patterned conductive layer 135 is for example good conductive nano filament or indium tin oxide of light transmission.Wherein, above-mentioned conductive nano filament can be development, gold nanowire, CNT or nano copper wire.
Above-mentioned the first transparent barrier 122 and the second transparent barrier 124 have the function that stops heat energy and laser penetration, therefore can be in laser-induced thermal etching processing procedure, and heat loss the first patterned conductive layer 133 and the second patterned conductive layer 135 of avoiding laser to produce.Therefore the first transparent barrier 122 and the second transparent barrier 124 are heat energy restraining barrier, laser barrier or both combinations, and the optional self-induced transparency optical cement of its material, transparent photoresistance, transparent resin and aforementioned arbitrary combination one of form group.Therefore the thickness of above-mentioned the first transparent barrier-layer 122 and the second transparent barrier-layer 124 is in fact between 1 micron to 20 microns, be preferably between 2 microns to 10 microns, and be suitable for stopping that wavelength essence is less than the laser beam of 390 nanometers, but can allow the visible ray of wavelength essence between 390 nanometer to 700 nanometers to pass through.
In addition, foregoing circuit element 200 also includes a plurality of the first conductive traces 152, a plurality of the second conductive trace 154, flexible circuit board 160, tack coat 172, protective seam 174 and transparent cover plate 190.Above-mentioned the first conductive trace 152 and the second conductive trace 154 are disposed at respectively at least one lateral edges of the first patterned conductive layer 133 and the first transparent covering layer 142.The second conductive trace 154 is disposed at respectively at least one lateral edges of the second patterned conductive layer 135 and the second transparent covering layer 144.Above-mentioned flexible circuit board 160 is disposed at one of transparency carrier 110 side, and is electrically connected the first patterned conductive layer 133 and the second patterned conductive layer 135 through the first conductive trace 152 and the second conductive trace 154 respectively.Above-mentioned tack coat 172, is covered in the first transparent covering layer 142 tops; Protective seam 174, be covered in the second transparent covering layer 144 away from one of the second patterned conductive layer 135 side; And transparent cover plate 190, be disposed at tack coat 172 with respect to one of the first patterned conductive layer 133 side.In addition, foregoing circuit element 200 is for example capacitive touch control element or membrane transistor, and wherein the first patterned conductive layer 133 and the second patterned conductive layer 135, and the two has at least a part mutually to overlap.
Please refer to Fig. 2, the structural representation that Fig. 2 is the circuit component that illustrated according to another embodiment of the utility model.The circuit component 200 of the present embodiment is with the difference of circuit component structure shown in Fig. 1 H, the transparency carrier 110 of circuit component 200 only has one side to be provided with transparent barrier-layer, also can reach above-mentioned relative two surfaces at transparency carrier the effect that transparent barrier-layer can be reached is all set.For example, if only the first transparent barrier-layer 122 is set in the first surface 110S1 of transparency carrier 110, and the second surface 110S2 of transparency carrier 110 does not arrange the second transparent barrier-layer, the first transparent barrier-layer 122 preferred thickness range now essence between 2 microns to 40 microns, be just suitable for reaching above-mentioned effect.
In addition, in the another embodiment of the utility model, can, according to the concrete structure of circuit component and purposes, be positioned at the conductive layer of the relative both sides of transparency carrier, only a conductive layer is patterned conductive layer, and another conductive layer is the conductive layer of not patterned whole property.Refer to Fig. 3, the structural representation that Fig. 3 is the circuit component that illustrated according to another embodiment of the utility model.The circuit component 300 of the present embodiment is with the difference of earlier figures 1H illustrated embodiment, be arranged on the first transparent barrier-layer 122 is the first patterned conductive layer 133, and what be arranged at side under the second transparent barrier-layer 124 is the second conductive layer 134, also the second transparent barrier-layer 124 is arranged between transparency carrier 110 and the second conductive layer 134, and the second conductive layer 134 is the conductive layer of not patterned whole property.When circuit component 300 is for example applied in contact panel, aforementioned the first patterned conductive layer 133 can be used as touch-control sensing electrode, for generation of touch-control sensing signal, and the second conductive layer 134 can be used as electro-magnetic screen layer, disturbs for the signal that shields display or surrounding environment.Other corresponding component and Fig. 1 H embodiment are basic identical, therefore repeat no more.
In sum, the utility model is between transparency carrier and conductive layer, additional configuration transparent barrier-layer, avoid utilizing etch process in the time of the conductive layer of one of patterned transparent substrate side, be damaged to another conductive layer that is positioned at the relative side of transparency carrier with laser or heat energy, especially when conductive is when forming as development the comparatively responsive conductive nano silk of laser, effect of the utility model is more obvious.Due to the transparent barrier-layer between transparency carrier and conductive layer that is disposed at of, the utility model, there is the function that stops heat energy and laser penetration, can effectively improve the problem of the element damage that etch process easily causes.Hereat, utilize the manufacture method of the utility model produced circuit component, there is higher process rate with respect to known techniques.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment of making, be equal to replacement, improvement etc., within all should being included in the scope of the utility model protection.
Claims (12)
1. a circuit component, has light transmission, it is characterized in that, comprising:
One transparency carrier, has a first surface;
One first transparent barrier-layer, is disposed on this first surface;
One first patterned conductive layer, is disposed on this first transparent barrier-layer; And
One second conductive layer, is disposed at one of relative this first surface of this transparency carrier side.
2. circuit component according to claim 1, is characterized in that, this transparency carrier more includes one of this first surface second surface relatively, and this circuit component more comprises:
One second transparent barrier-layer, be disposed at this second surface of this transparency carrier, and this second transparent barrier-layer is more disposed between this transparency carrier and this second conductive layer.
3. circuit component according to claim 1 and 2, is characterized in that, this second conductive layer is the conductive layer of a patterning, this first patterned conductive layer and this second conductive layer, and the two has at least a part overlapped in vertical projection.
4. circuit component according to claim 1, is characterized in that, this first transparent barrier-layer is a heat energy restraining barrier, a laser restraining barrier or the combination of the two.
5. circuit component according to claim 2, is characterized in that, this first transparent barrier-layer and this second transparent barrier-layer are a heat energy restraining barrier, a laser restraining barrier or the combination of the two.
6. circuit component according to claim 5, it is characterized in that, form the material of this first transparent barrier-layer and this second transparent barrier-layer, be selected from by a transparent optical cement, a transparent photoresistance, a transparent resin and aforementioned arbitrary combination and one of formed group.
7. circuit component according to claim 1 and 2, is characterized in that, forms the material of this first patterned conductive layer and this second conductive layer, comprises a development, a gold nanowire, a CNT or a nano copper wire.
8. circuit component according to claim 1, is characterized in that, this circuit component is a capacitance type touch-control panel or a membrane transistor.
9. circuit component according to claim 1 and 2, is characterized in that, more comprises:
One first transparent covering layer, this first patterned conductive layer is between this first transparent covering layer and this first transparent barrier-layer; And
One second transparent covering layer, this second conductive layer is between this transparency carrier second transparent covering layer.
10. circuit component according to claim 9, is characterized in that, more comprises: a transparent cover plate, is disposed at this first transparent covering layer with respect to one of this first patterned conductive layer side.
11. circuit components according to claim 1, is characterized in that, the thickness of this first transparent barrier is between 2 microns to 40 microns.
12. circuit components according to claim 2, is characterized in that, the thickness of this first transparent barrier-layer and this second transparent barrier-layer is respectively between 1 micron to 20 microns.
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| CN201420172401.0U CN203870589U (en) | 2014-04-04 | 2014-04-04 | Circuit element |
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| CN201420172401.0U CN203870589U (en) | 2014-04-04 | 2014-04-04 | Circuit element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104978058A (en) * | 2014-04-04 | 2015-10-14 | 宝宸（厦门）光学科技有限公司 | Circuit element and manufacture method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104978058A (en) * | 2014-04-04 | 2015-10-14 | 宝宸（厦门）光学科技有限公司 | Circuit element and manufacture method thereof |
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