CN203862609U - Semiconductor wafer cleaning device - Google Patents
Semiconductor wafer cleaning device Download PDFInfo
- Publication number
- CN203862609U CN203862609U CN201420135525.1U CN201420135525U CN203862609U CN 203862609 U CN203862609 U CN 203862609U CN 201420135525 U CN201420135525 U CN 201420135525U CN 203862609 U CN203862609 U CN 203862609U
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- CN
- China
- Prior art keywords
- cleaning device
- pure water
- gas
- rinse bath
- top board
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000004140 cleaning Methods 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 70
- 239000013078 crystal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 abstract description 9
- 239000012535 impurity Substances 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 14
- 230000003749 cleanliness Effects 0.000 description 10
- 230000002000 scavenging effect Effects 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Abstract
The utility model provides a semiconductor wafer cleaning device. The semiconductor wafer cleaning device comprises an overflow cleaning tank. The overflow cleaning tank is provided with a water inlet and a water outlet. The semiconductor wafer cleaning device further comprises a hollow panel and an air pipeline, wherein the hollow panel is located in the overflow cleaning tank. The hollow panel is provided with a first air inlet and a plurality of evenly-distributed air outlets. The air pipeline is connected with the first air inlet and feeds air into the first air inlet. The air fed into the hollow panel is discharged to pure water of the overflow cleaning tank through the evenly-distributed air outlets of the hollow panel, so that a wafer is thoroughly stirred in the overflow cleaning process, impurities on the wafer can be dissolved in the pure water as soon as possible and flow away with the pure water, the cleaning time is shortened, and the use amount of the pure water is reduced; meanwhile, nitrogen is fed into the pure water, so that a nitrogen protection film is formed on the surface of the pure water, the nitrogen sealing function is achieved, water resistance of the pure water is rapidly improved, the cleaning time is further shortened, and the use amount of the pure water is reduced.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, more particularly, relates to a kind of semiconductor crystal wafer cleaning device.
Background technology
Wafer cleaning technique is to electronics industry, and especially semi-conductor industry is of crucial importance.In the manufacture process of semiconductor devices and integrated circuit, almost every procedure all relates to cleaning, and the integrated level of integrated circuit is higher, and manufacturing process is more, and the operation of cleaning is also more.
Wafer cleaning is mainly to remove the various foreign ions that are adsorbed on crystal column surface, as particulate, organic matter, inorganic metal ion etc., makes the surface cleanliness of wafer reach certain technological requirement.The principle of wet method wafer cleaning is to use various chemical liquids and the various foreign particle generation of crystal column surface chemical reaction, generates water-soluble material, then rinses the various impurity of removal crystal column surface with high purity water.
Along with the development of semiconductor wafer process, in order to meet the demand of wafer electrology characteristic, also more and more higher to the requirement of the wafer cleanliness factor after cleaning.In order to meet the requirement of wafer cleanliness factor, more than the water resistance that just must meet the pure water after cleaning wafer reaches 17M Ω/CM, wherein, the water resistance of described pure water is larger, and the cleanliness factor of wafer is higher.
In prior art, it is all the requirement that meets time of rinsing by prolongation wafer cleanliness factor, meet the water resistance of the pure water after cleaning wafer more than 17M Ω/CM, but, the time of its over flow rinse is often wanted more than 30 minutes, so not only can waste a large amount of pure water, and sometimes also cannot reach the requirement of water resistance more than 17M Ω/CM, make the cleanliness factor of wafer lower.
Utility model content
In view of this, the utility model provides a kind of semiconductor crystal wafer cleaning device, wastes a large amount of pure water and the lower problem of cleanliness factor when the cleaning wafer to solve in prior art.
For achieving the above object, the utility model provides following technical scheme:
A kind of semiconductor crystal wafer cleaning device, comprises overflow rinse bath, and described overflow rinse bath has water inlet and delivery port, also comprises:
Be positioned at the hollow top board of described overflow rinse bath, described hollow top board has the first air inlet and multiple equally distributed gas outlet;
Be connected with described the first air inlet and to the gas pipeline that passes into gas in described the first air inlet.
Preferably, described cleaning device also comprises:
The gas flowmeter being connected with described gas pipeline, wherein, described gas flowmeter has the second air inlet that passes into gas to described gas pipeline.
Preferably, described gas flowmeter is positioned at the outside of described overflow rinse bath.
Preferably, the part that described gas pipeline is connected with described the first air inlet is positioned at the inside of described overflow rinse bath, and the part that described gas pipeline is connected with described gas flowmeter is positioned at the outside of described overflow rinse bath.
Preferably, described hollow top board is box like structure, comprises the first surface and the second surface that are parallel to each other, and four sides between described first surface and second surface.
Preferably, the first surface of described hollow top board is towards a side of described overflow rinse bath base plate, and the second surface of described hollow top board is a side of described overflow rinse bath base plate dorsad.
Preferably, described the first air inlet is positioned at arbitrary side of described hollow top board.
Preferably, described multiple gas outlet is evenly distributed on the second surface of described hollow top board.
Preferably, the quartzy panel that described hollow top board is hollow.
Preferably, described gas is nitrogen.
Compared with prior art, technical scheme provided by the utility model has the following advantages:
Semiconductor crystal wafer cleaning device provided by the utility model, be provided with hollow top board at overflow bottom of rinse bath, multiple equally distributed gas outlet by hollow top board will pass into its inner gas discharging in the pure water of described overflow rinse bath, thereby make wafer in the time that overflow is cleaned, obtain sufficient stirring, can make the impurity on wafer be dissolved in pure water and with pure water and flow away as early as possible, thereby shorten scavenging period, saved the consumption of pure water.
Simultaneously, the air film that the importing of gas forms between pure water and air, stop that airborne carbon dioxide solubility forms the carbonic acid of low concentration in water, play the effect of nitrogen envelope, suppress the reduction of water resistance, more than water resistance when wafer overflow is cleaned has reached 17M Ω/CM faster, thereby can reach rapidly desirable ultra-high purity cleaning performance, further shorten scavenging period, saved the consumption of pure water.
Brief description of the drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structural representation of the semiconductor crystal wafer cleaning device that Fig. 1 provides for an embodiment of the present utility model.
Detailed description of the invention
As described in background, in prior art, it is all the requirement that meets time of rinsing by prolongation wafer cleanliness factor, meet the water resistance of the pure water after cleaning wafer more than 17M Ω/CM, but the time of its over flow rinse is often wanted more than 30 minutes, so not only can waste a large amount of pure water, and sometimes also cannot reach the requirement of water resistance more than 17M Ω/CM, make the cleanliness factor of wafer lower.
Based on this, the utility model provides a kind of semiconductor crystal wafer cleaning device, the problems referred to above that exist to overcome prior art, comprise overflow rinse bath, described overflow rinse bath has water inlet and the delivery port of turnover pure water, also comprise: be positioned at the hollow top board on described overflow rinse bath inner bottom plating surface, described hollow top board has and passes into the first air inlet of gas to described hollow top board inside and to the multiple equally distributed gas outlet that enters gas in described overflow rinse bath.
Semiconductor crystal wafer cleaning device provided by the utility model, be provided with hollow top board at overflow bottom of rinse bath, multiple equally distributed gas outlet by hollow top board will pass into its inner gas discharging in the pure water of described overflow rinse bath, thereby make wafer in the time that overflow is cleaned, obtain sufficient stirring, can make the impurity on wafer be dissolved in pure water and with pure water and flow away as early as possible, thereby shorten scavenging period, saved the consumption of pure water.
Simultaneously, the air film that the importing of gas forms between pure water and air, stop that airborne carbon dioxide solubility forms the carbonic acid of low concentration in water, play the effect of nitrogen envelope, suppress the reduction of water resistance, more than water resistance when wafer overflow is cleaned has reached 17M Ω/CM faster, thereby can reach rapidly desirable ultra-high purity cleaning performance, further shorten scavenging period, saved the consumption of pure water.
Be more than core concept of the present utility model, for above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, detailed description of the invention of the present utility model be described in detail.
A lot of details are set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to the utility model intension in the situation that, and therefore the utility model is not subject to the restriction of following public specific embodiment.
Secondly, the utility model is described in detail in conjunction with schematic diagram, in the time that the utility model embodiment is described in detail in detail; for ease of explanation; represent that the profile of device architecture can disobey general ratio and do local amplification, and described schematic diagram is example, it should not limit the scope of the utility model protection at this.In addition in actual fabrication, should comprise, the three-dimensional space of length, width and the degree of depth.
Below by specific embodiment, scheme of the present utility model is described in detail.
An embodiment of the present utility model provides a kind of semiconductor crystal wafer cleaning device, its structural representation as shown in Figure 1, comprise overflow rinse bath 1, water inlet and the delivery port (not shown) on two sides of this overflow rinse bath 1 with turnover pure water, pure water enters the inside of overflow rinse bath 1 by water inlet, flows out overflow rinse bath 1 by delivery port, in this process, the various impurity of crystal column surface are dissolved in pure water, and flow out with pure water, to reach the object of clean wafer.
The semiconductor crystal wafer cleaning device that the present embodiment provides, also comprise: be positioned at the hollow top board 2 of the backplate surface of described overflow rinse bath 1 inside, described hollow top board 2 has and passes into the first air inlet 3 of gas to described hollow top board 2 inside and to the multiple equally distributed gas outlet 4 that enters gas in the pure water in described overflow rinse bath 1.Wherein, the area of each gas outlet 4 will be much smaller than the area of air inlet 3, to can form the bubble with stirring action.
As shown in Figure 1, hollow top board 2 is box like structure, its material is preferably quartz plate, comprise and being parallel to each other and symmetrically arranged first surface and second surface, and four sides between described first surface and second surface, wherein, described first surface is positioned at the side of described hollow top board 2 towards described overflow rinse bath 1 base plate, and described second surface is positioned at described hollow top board 2 side of described overflow rinse bath 1 base plate dorsad.
And the first air inlet 3 is positioned on arbitrary side of hollow top board 2, on the arbitrary side in four sides between first surface and second surface; And multiple gas outlets 4 are evenly distributed on the second surface of described hollow top board 2.Enter the gas of hollow top board 2 inside by the first air inlet 3, discharge from multiple gas outlets 4, enter in the pure water of overflow rinse bath 1 inside, thereby play sufficient stirring action, make the impurity on wafer be dissolved in pure water and with pure water and flow away as early as possible.
The semiconductor crystal wafer cleaning device that the present embodiment provides, as shown in Figure 1, also comprises: be connected with the first air inlet 3 of described hollow top board 2 and to the gas pipeline 5 that passes into gas in described the first air inlet 3; And the gas flowmeter 6 being connected with described gas pipeline 5, wherein, described gas flowmeter 6 has the second air inlet 7 that passes into gas to described gas pipeline 5.And, this gas flowmeter 6 is positioned at the outside of described overflow rinse bath 1, and in coupled gas pipeline 5, the part being connected with described the first air inlet 3 is positioned at the inside of described overflow rinse bath 1, and the part being connected with described gas flowmeter 6 is positioned at the outside of described overflow rinse bath 1.
In specific implementation process, in the time that wafer need to clean, only wafer need be placed on hollow top board 2, then in the second air inlet 7, pass into gas, gas is entered in gas flowmeter 6, wherein, gas flowmeter 6 can regulate the size of controlling gas flow after opening.After gas flowmeter 6 regulates, the gas of certain flow enters in hollow top board 2 by gas pipeline 5 and the first air inlet 3, then enter in the pure water of overflow rinse bath 1 by multiple equally distributed gas outlets 4, in the time having bubble to heave in gas outlet 4, this cleaning device plays a role, then can measure by water resistance table the size of the water resistance of the pure water in overflow rinse bath 1, thereby can by the size of water resistance judge the water resistance of pure water whether reached 17M Ω/CM and more than, and then judge whether the cleanliness factor of wafer has reached the requirement of technique.
In the present embodiment, described gas is preferably nitrogen, its form with bubble is from discharge equally distributed gas outlet 4, be uniformly distributed in pure water, between pure water and air, form air film, stop that airborne carbon dioxide solubility forms the carbonic acid of low concentration in water, after carbonic acid in pure water reduces, the concentration of ion also can reduce, thereby under certain measuring voltage, water resistance can be again because the increase of carbonic acid reduces, more than water resistance when wafer overflow is cleaned can reach 17M Ω/CM faster.
Certainly, in other embodiments, also can adopt other gases, as long as it can play stirring action and the size of water resistance not exerted an influence, and in the present embodiment, adopt the reason of nitrogen to be that its cost in meeting above-mentioned requirements is lower.
The semiconductor crystal wafer cleaning device that the present embodiment provides, be provided with hollow top board at overflow bottom of rinse bath, multiple equally distributed gas outlet by hollow top board will pass into its inner gas discharging in the pure water of described overflow rinse bath, thereby make wafer in the time that overflow is cleaned, obtain sufficient stirring, can make the impurity on wafer be dissolved in pure water and with pure water and flow away as early as possible, thereby shorten scavenging period, saved the consumption of pure water.
Simultaneously, the air film that the importing of gas forms between pure water and air, stop that airborne carbon dioxide solubility forms the carbonic acid of low concentration in water, play the effect of nitrogen envelope, suppress the reduction of water resistance, more than water resistance when wafer overflow is cleaned has reached 17M Ω/CM faster, thereby can reach rapidly desirable ultra-high purity cleaning performance, further shorten scavenging period, saved the consumption of pure water.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiment, General Principle as defined herein can, in the situation that not departing from spirit or scope of the present utility model, realize in other embodiments.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a semiconductor crystal wafer cleaning device, comprises overflow rinse bath, and described overflow rinse bath has water inlet and delivery port, it is characterized in that, also comprises:
Be positioned at the hollow top board of described overflow rinse bath, described hollow top board has the first air inlet and multiple equally distributed gas outlet;
Be connected with described the first air inlet and to the gas pipeline that passes into gas in described the first air inlet.
2. cleaning device according to claim 1, is characterized in that, described cleaning device also comprises:
The gas flowmeter being connected with described gas pipeline, wherein, described gas flowmeter has the second air inlet that passes into gas to described gas pipeline.
3. cleaning device according to claim 2, is characterized in that, described gas flowmeter is positioned at the outside of described overflow rinse bath.
4. cleaning device according to claim 3, it is characterized in that, the part that described gas pipeline is connected with described the first air inlet is positioned at the inside of described overflow rinse bath, and the part that described gas pipeline is connected with described gas flowmeter is positioned at the outside of described overflow rinse bath.
5. cleaning device according to claim 1, is characterized in that, described hollow top board is box like structure, comprises the first surface and the second surface that are parallel to each other, and four sides between described first surface and second surface.
6. cleaning device according to claim 5, is characterized in that, the first surface of described hollow top board is towards a side of described overflow rinse bath base plate, and the second surface of described hollow top board is a side of described overflow rinse bath base plate dorsad.
7. cleaning device according to claim 6, is characterized in that, described the first air inlet is positioned at arbitrary side of described hollow top board.
8. cleaning device according to claim 7, is characterized in that, described multiple gas outlets are evenly distributed on the second surface of described hollow top board.
9. according to the cleaning device described in claim 4 or 8, it is characterized in that the quartzy panel that described hollow top board is hollow.
10. cleaning device according to claim 9, is characterized in that, described gas is nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420135525.1U CN203862609U (en) | 2014-03-24 | 2014-03-24 | Semiconductor wafer cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420135525.1U CN203862609U (en) | 2014-03-24 | 2014-03-24 | Semiconductor wafer cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203862609U true CN203862609U (en) | 2014-10-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420135525.1U Expired - Lifetime CN203862609U (en) | 2014-03-24 | 2014-03-24 | Semiconductor wafer cleaning device |
Country Status (1)
| Country | Link |
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| CN (1) | CN203862609U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103878141A (en) * | 2014-03-24 | 2014-06-25 | 安徽安芯电子科技有限公司 | Semiconductor wafer washing device |
| CN106356322A (en) * | 2016-10-20 | 2017-01-25 | 北方电子研究院安徽有限公司 | Wafer corrosion device and corrosion method |
-
2014
- 2014-03-24 CN CN201420135525.1U patent/CN203862609U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103878141A (en) * | 2014-03-24 | 2014-06-25 | 安徽安芯电子科技有限公司 | Semiconductor wafer washing device |
| CN106356322A (en) * | 2016-10-20 | 2017-01-25 | 北方电子研究院安徽有限公司 | Wafer corrosion device and corrosion method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Semiconductor wafer washing device Effective date of registration: 20160415 Granted publication date: 20141008 Pledgee: Jiuhua Hengchang Chizhou Industrial Investment Co. Pledgor: ANHUI ANXIN ELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: 2016340000017 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Golden Road 247000 Anhui city in Chizhou Province Economic and Technological Development Zone No. 88 Chevalier Electronic Information Industrial Park No. 10 Patentee after: ANHUI ANXIN ELECTRONIC TECHNOLOGY CO.,LTD. Address before: Golden Road 247000 Anhui city in Chizhou Province Economic and Technological Development Zone No. 88 Chevalier Electronic Information Industrial Park No. 10 Patentee before: ANHUI ANXIN ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170612 Granted publication date: 20141008 Pledgee: Jiuhua Hengchang Chizhou Industrial Investment Co. Pledgor: ANHUI ANXIN ELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: 2016340000017 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141008 |