CN203849199U - Gold flat electrode - Google Patents
Gold flat electrode Download PDFInfo
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- CN203849199U CN203849199U CN201420081510.1U CN201420081510U CN203849199U CN 203849199 U CN203849199 U CN 203849199U CN 201420081510 U CN201420081510 U CN 201420081510U CN 203849199 U CN203849199 U CN 203849199U
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- film
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- rete
- gold film
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Abstract
The utility model discloses a gold flat electrode which comprises one layer of nanometer-thickness base sheet (1) covered with a nanometer thickness working gold film (2) and a pin gold film (3), wherein the pin gold film (3) is connected with a metal wire lead (5) externally wrapped with a plastic insulation layer (4) through solder tin (6). The base sheet (1) has the structure that a silicon dioxide film layer (12), a metal chromium film layer (13) and a copper-nickel alloy film layer (14) are gradually deposited on a polished silicon nitride substrate (11); after the copper-nickel alloy film layer (14) is polished, the working gold film (2) and the pin gold film (3) are deposited on the surface of the copper-nickel alloy film layer (14), and the thickness of the deposition gold film is 20-400nm. The gold flat electrode is simple in manufacture, low in cost, convenient to use; the gold film is large in working area, high in flatness, and superior to a conventional electrochemical gold disc electrode, and the surface is easily modified.
Description
Technical field
The utility model relates to a kind of golden plate electrode, is that this electrode can be used as the working electrode of use for electrochemical tests based on the film modified sensing detection chip electrode of nanometer grade thickness gold.
Background technology
Electrochemical working electrode, except glass-carbon electrode, platinum disk electrode, also has gold disc electrode etc.In gold dish working electrode, the purity requirement of gold reaches more than 99.95%, the diameter of gold dish be generally 2mm and more than, thickness is 1mm left and right, is welded to connect with copper rod, and overcoat is teflon macromolecular material, production process more complicated, consume the materials such as gold, teflon, cause electrode cost very high, and the working area of gold dish is also less, contact area at Electrochemical Modification and molecule aspect fixing is less, causes modification amount and the fixed amount of gold surface molecule few.For this reason, the utility model proposes a kind of golden plate electrode, the golden film working area of this electrode is large, and the thickness of gold can freely be controlled as required, and tens, to hundreds of nanoscales, when preparation, the gold amount of actual consumption is much smaller than gold disc electrode, and cost is very low; And the golden film smooth surface that this electrode deposits is smooth, be suitable for carrying out the processing such as finishing and molecule be fixing, be better than traditional electrochemical gold disc electrode; As the working electrode of use for electrochemical tests, its versatility is very strong, in the fields such as galvanochemistry, biomedicine, Agriculture and Environment monitoring, has very important application prospect.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of golden plate electrode simple, with low cost of making, and can be used as the working electrode of use for electrochemical tests.
In order to achieve the above object, the technical solution adopted in the utility model is: a kind of golden plate electrode, it is characterized in that this electrode comprises the substrate that is coated with one deck nanometer grade thickness work gold film and pin gold film, this pin gold film is connected by scolding tin with the tinsel wire that is surrounded by plastic insulating layer outward, junction epoxide-resin glue environmental sealing.Wherein, the material of described tinsel wire is copper wire, aluminium wire or filamentary silver, to ensure good conduction, conduction; Described substrate be shaped as rectangle, length is 3 ~ 18mm, wide is 2 ~ 12mm, its edge all seals with epoxide-resin glue; The work square that is shaped as of golden film, the length of side is 2 ~ 12mm; Pin gold film be shaped as small rectangle, length is 1 ~ 6mm, wide is 1 ~ 4mm.
The preparation method of described substrate adopts magnetron sputtering embrane method and mask plate method, and the structure of formation is: first adopt magnetron sputtering embrane method, by controlling plated film vacuum tightness≤2.0 × 10
-3pa, coating speed≤2.0/s, progressively deposition of silica rete, crome metal rete, cupronickel rete on the silicon nitride board surface of polishing; Cupronickel rete, after polishing, then adopts mask plate method to deposit in its surface work gold film and pin gold film.And progressively the thickness of the silica coating of deposition is 60 ~ 400nm on the silicon nitride board surface of polishing, the thickness of crome metal rete is 20 ~ 100nm, and the thickness of cupronickel rete is 60 ~ 400nm.Especially, cupronickel rete after polishing, in its surface the thickness of deposition work gold film and pin gold film be 20 ~ 400nm, thereby form a kind of golden plate electrode.In addition, the quality percentage composition of the each component of cupronickel film material is respectively: Cu 70 ~ 85%, Ni 10 ~ 25%, Fe 3 ~ 6%, Ti 0.1 ~ 0.4%, Nb 0.01 ~ 0.05%.
In the design of electrode, different from the gold dish working electrode of traditional use for electrochemical tests, the golden film working area of the golden plate electrode of the utility model design is large, can freely control as required the deposit thickness of golden film, as be controlled at tens to hundreds of nanometers, thereby when preparation actual consumption costliness gold total amount much smaller than corresponding gold disc electrode, cost is controlled make very low.And, the golden film smooth surface that this electrode deposits is smooth, be suitable for carrying out the chemical-biological reaction treatment such as finishing and molecule be fixing, versatility is very strong, be better than traditional galvanochemistry gold disc electrode, in the fields such as galvanochemistry, biomedicine, Agriculture and Environment monitoring, there is very important application prospect and using value as electrochemical working electrode.
The beneficial effects of the utility model are, this gold plate electrode is made simple, with low cost, easy to use, and golden film working area is large, flatness is high, easily carry out finishing, and versatility is very strong, is better than traditional electrochemical gold disc electrode.
Brief description of the drawings
Below in conjunction with accompanying drawing, the utility model is further illustrated.
Fig. 1 is the planar structure schematic diagram of golden plate electrode.
Fig. 2 is the planing surface structural representation of golden plate electrode substrate.
In Fig. 1,1. substrate, the 2. golden film of work, 3. pin gold film, 4. plastic insulating layer, 5. tinsel wire, 6. scolding tin, 7. epoxide-resin glue.
In Fig. 2,11. silicon nitride boards, 12. silica coatings, 13. crome metal retes, 14. cupronickel retes.
Embodiment
As shown in Figure 1, a kind of golden plate electrode, this electrode comprises the substrate 1 that is coated with one deck nanometer grade thickness work gold film 2 and pin gold film 3, and this pin gold film 3 is connected by scolding tin 6 with the tinsel wire 5 that is surrounded by plastic insulating layer 4 outward, epoxide-resin glue 7 environmental sealings for junction; Wherein, tinsel wire 5 adopts copper wire, to ensure good conduction, conduction; Substrate 1 be shaped as rectangle, long is 9mm, wide 6mm, its edge all seals with epoxide-resin glue; The work square that is shaped as of golden film 2, the length of side is 6mm; Pin gold film 3 be shaped as small rectangle, long is 3mm, wide is 1mm.
As shown in Figure 2, for the substrate 1 of golden plate electrode, its preparation process is as follows: adopt magnetron sputtering embrane method, controlling plated film vacuum tightness is 1.2 × 10
-3pa, coating speed is 1.5/s, progressively sputtering sedimentation silica coating 12, crome metal rete 13, cupronickel rete 14 on silicon nitride board 11 surfaces of polishing; Cupronickel rete 14, after polishing, then adopts mask plate method sputtering sedimentation work in its surface gold film 2 and pin gold film 3; Wherein, the thickness of silica coating 12 is 220nm, and the thickness of crome metal rete 13 is 30nm, and the thickness of cupronickel rete 14 is 250nm; The thickness of golden film 2 and pin gold film 3 of working is 150nm, thereby forms a kind of golden plate electrode.In addition, the quality percentage composition of the each component of cupronickel rete 14 materials is respectively: Cu 77.1%, Ni 17.5%, Fe 5.2%, Ti 0.18%, Nb 0.02%.
Golden film working area that it should be noted that prepared golden plate electrode is very large, and each rete deposit thickness is easily controlled, and consumes expensive golden amount also much smaller than gold disc electrode, and therefore cost of manufacture is quite cheap; And, the golden film surface of substrate 1 is very smooth, be suitable for carrying out the chemical-biological reaction treatment such as finishing and molecule be fixing, its versatility as electrochemical working electrode is very strong, be better than traditional galvanochemistry gold disc electrode, in the fields such as galvanochemistry, biomedicine, Agriculture and Environment monitoring, there is very important use value and application prospect.
Claims (6)
1. a golden plate electrode, it is characterized in that this electrode comprises the substrate (1) that is coated with one deck nanometer grade thickness work gold film (2) and pin gold film (3), this pin gold film (3) is connected by scolding tin (6) with the tinsel wire (5) that is surrounded by plastic insulating layer (4) outward, epoxide-resin glue for junction (7) environmental sealing.
2. golden plate electrode according to claim 1, is characterized in that the rectangle that is shaped as of described substrate (1), and length is 3 ~ 18mm, and wide is 2 ~ 12mm, and its edge all seals with epoxide-resin glue; The work square that is shaped as of golden film (2), the length of side is 2 ~ 12mm; Pin gold film (3) be shaped as small rectangle, length is 1 ~ 6mm, wide is 1 ~ 4mm.
3. golden plate electrode according to claim 1, the material that it is characterized in that described tinsel wire (5) is copper wire, aluminium wire or filamentary silver.
4. golden plate electrode according to claim 1, is characterized in that the structure of described substrate (1) is: progressively deposition of silica rete (12), crome metal rete (13), cupronickel rete (14) on silicon nitride board (11) surface of polishing; Cupronickel rete (14), after polishing, then deposits work gold film (2) and the golden film of pin (3) in its surface.
5. golden plate electrode according to claim 4, it is characterized in that: on silicon nitride board (11) surface of polishing, progressively the thickness of the silica coating (12) of deposition is 60 ~ 400nm, the thickness of crome metal rete (13) is 20 ~ 100nm, and the thickness of cupronickel rete (14) is 60 ~ 400nm.
6. golden plate electrode according to claim 4, is characterized in that: cupronickel rete (14) after polishing, in its surface the thickness of deposition work gold film (2) and the golden film of pin (3) be 20 ~ 400nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420081510.1U CN203849199U (en) | 2014-02-26 | 2014-02-26 | Gold flat electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420081510.1U CN203849199U (en) | 2014-02-26 | 2014-02-26 | Gold flat electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203849199U true CN203849199U (en) | 2014-09-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420081510.1U Expired - Fee Related CN203849199U (en) | 2014-02-26 | 2014-02-26 | Gold flat electrode |
Country Status (1)
| Country | Link |
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| CN (1) | CN203849199U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107121381A (en) * | 2017-05-03 | 2017-09-01 | 南京科兴新材料科技有限公司 | The preparation method of working electrode in a kind of three-electrode system |
-
2014
- 2014-02-26 CN CN201420081510.1U patent/CN203849199U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107121381A (en) * | 2017-05-03 | 2017-09-01 | 南京科兴新材料科技有限公司 | The preparation method of working electrode in a kind of three-electrode system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140924 Termination date: 20150226 |
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| EXPY | Termination of patent right or utility model |