CN103776882B - A kind of Nanometer scale Au film electrode based on silicon nitride - Google Patents
A kind of Nanometer scale Au film electrode based on silicon nitride Download PDFInfo
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- CN103776882B CN103776882B CN201410066383.2A CN201410066383A CN103776882B CN 103776882 B CN103776882 B CN 103776882B CN 201410066383 A CN201410066383 A CN 201410066383A CN 103776882 B CN103776882 B CN 103776882B
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Abstract
The invention discloses a kind of Nanometer scale Au film electrode based on silicon nitride, this electrode comprises the substrate (1) being coated with one deck nanometer grade thickness work gold film (2) and pin gold film (3), and this pin gold film (3) is connected by scolding tin (6) with the tinsel wire (5) being surrounded by plastic insulating layer (4) outward; The preparation of described substrate (1) adopts magnetron sputtering embrane method, i.e. progressively sputtering sedimentation tin ash rete (12), Titanium rete (13), cupromanganese rete (14) on the silicon nitride board (11) of polishing; Cupromanganese rete (14) after polishing, then adopts mask plate method sputtering sedimentation work in its surface gold film (2) and pin gold film (3), and the thickness of institute's deposited gold film is 20 ~ 400nm.This Nanometer scale Au film electrode makes simple, with low cost, easy to use, and golden film working area is large, flatness is high, easily carry out finishing, is better than the gold disc electrode of Conventional electrochemical.
Description
Technical field
The present invention relates to a kind of Nanometer scale Au film electrode based on silicon nitride, is that this electrode can be used as the working electrode of use for electrochemical tests based on the film modified sensing detection chip electrode of nanometer grade thickness gold.
Background technology
Electrochemical working electrode, except glass-carbon electrode, platinum disk electrode, also has gold disc electrode etc.In gold dish working electrode, the purity requirement of gold reaches more than 99.95%, gold dish diameter be generally 2mm and more than, thickness is about 1mm, is welded to connect with copper rod, and overcoat is teflon macromolecular material, production process more complicated, consume the material such as gold, teflon, cause electrode cost very high, and the working area of gold dish is also less, contact area in Electrochemical Modification and molecule are fixed is less, cause the modification amount of gold surface molecule and fixed amount few.For this reason, the present invention proposes a kind of Nanometer scale Au film electrode based on silicon nitride, the golden film working area of this electrode is large, the thickness of gold can freely control as required, tens to hundreds of nanoscale, during preparation, the gold amount of actual consumption is much smaller than gold disc electrode, and cost is very low; And the golden film smooth surface that this electrode deposits is smooth, the process such as be suitable for carrying out finishing and molecule is fixing, is better than the gold disc electrode of Conventional electrochemical; As the working electrode of use for electrochemical tests, its versatility is very strong, in the fields such as galvanochemistry, biomedicine, Agriculture and Environment monitoring, have very important application prospect.
Summary of the invention
Technical matters to be solved by this invention is to provide and a kind ofly makes the Nanometer scale Au film electrode based on silicon nitride simple, with low cost, can be used as the working electrode of use for electrochemical tests.
In order to achieve the above object, the technical solution used in the present invention is: a kind of Nanometer scale Au film electrode based on silicon nitride, it is characterized in that this electrode comprises the substrate being coated with one deck nanometer grade thickness work gold film and pin gold film, this pin gold film is connected by scolding tin with the tinsel wire being surrounded by plastic insulating layer outward, junction epoxide-resin glue environmental sealing.Wherein, the material of described tinsel wire is copper wire, aluminium wire or filamentary silver, to ensure good conduction, conduction; The shape of described substrate is rectangle, and length is 3 ~ 18mm, and wide is 2 ~ 12mm, and epoxide-resin glue environmental sealing is all used in its edge; Work golden film shape for square, the length of side is 2 ~ 12mm; The shape of pin gold film is small rectangle, and length is 1 ~ 6mm, and wide is 1 ~ 4mm.
The preparation process of described substrate is as follows: adopt magnetron sputtering embrane method, by controlling plated film vacuum tightness≤2.0 × 10
-3pa, coating speed≤2.0/s, at silicon nitride board progressively sputtering sedimentation tin ash rete, Titanium rete, the cupromanganese rete on the surface of polishing; Cupromanganese rete after polishing, then adopts mask plate method sputtering sedimentation work in its surface gold film and pin gold film.And, polishing silicon nitride board on the surface progressively the thickness of the tin ash rete of sputtering sedimentation be 60 ~ 400nm, the thickness of Titanium rete is 20 ~ 100nm, and the thickness of cupromanganese rete is 60 ~ 400nm.Especially, cupromanganese rete after polishing, in its surface the thickness of deposition work gold film and pin gold film be 20 ~ 400nm, thus form a kind of Nanometer scale Au film electrode based on silicon nitride.In addition, the mass percent of each component of cupromanganese film material is respectively: Cu72 ~ 82%, Mn8 ~ 18%, Fe3 ~ 6%, Si≤3.5%, C≤0.45%, P≤0.07%, S≤0.03%.
In the design of electrode, different from the gold dish working electrode that Conventional electrochemical is tested, the golden film working area of the Nanometer scale Au film electrode of the present invention's design is large, freely can control the deposit thickness of golden film as required, as controlled tens to hundreds of nanometer, thus during preparation, the gold total amount of actual consumption costliness is much smaller than corresponding gold disc electrode, and cost is controlled obtained very low.And, the golden film smooth surface that this electrode deposits is smooth, the chemical-biological reaction treatment such as be suitable for carrying out finishing and molecule is fixing, versatility is very strong, be better than traditional galvanochemistry gold disc electrode, in the fields such as galvanochemistry, biomedicine, Agriculture and Environment monitoring, there is very important application prospect and using value as electrochemical working electrode.
The invention has the beneficial effects as follows, this Nanometer scale Au film electrode makes simple, with low cost, easy to use, and golden film working area is large, flatness is high, easily carry out finishing, and versatility is very strong, is better than the gold disc electrode of Conventional electrochemical.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Accompanying drawing 1 is the planar structure schematic diagram of the Nanometer scale Au film electrode based on silicon nitride.
Accompanying drawing 2 is planing surface structural representations of the Nanometer scale Au film electrode substrate based on silicon nitride.
In accompanying drawing 1,1. substrate, 2. work golden film, 3. pin gold film, 4. plastic insulating layer, 5. tinsel wire, 6. scolding tin, 7. epoxide-resin glue.
In accompanying drawing 2,11. silicon nitride boards, 12. tin ash retes, 13. Titanium retes, 14. cupromanganese retes.
Embodiment
As shown in Figure 1, a kind of Nanometer scale Au film electrode based on silicon nitride, this electrode comprises the substrate 1 being coated with one deck nanometer grade thickness work gold film 2 and pin gold film 3, this pin gold film 3 is connected by scolding tin 6 with the tinsel wire 5 being surrounded by plastic insulating layer 4 outward, junction epoxide-resin glue 7 environmental sealing; Wherein, tinsel wire 5 adopts copper wire, to ensure good conduction, conduction; The shape of substrate 1 is rectangle, and long is 9mm, wide 6mm, and epoxide-resin glue environmental sealing is all used in its edge; Work golden film 2 shape for square, the length of side is 6mm; The shape of pin gold film 3 is small rectangle, and long is 3mm, and wide is 1mm.
As shown in Figure 2, for the substrate 1 of the Nanometer scale Au film electrode based on silicon nitride, its preparation process is as follows: adopt magnetron sputtering embrane method, and controlling plated film vacuum tightness is 1.2 × 10
-3pa, coating speed is 1.5/s, at silicon nitride board 11 progressively sputtering sedimentation tin ash rete 12, Titanium rete 13, the cupromanganese rete 14 on the surface of polishing; Cupromanganese rete 14 after polishing, then adopts mask plate method sputtering sedimentation work in its surface gold film 2 and pin gold film 3; Wherein, the thickness of tin ash rete 12 is 180nm, and the thickness of Titanium rete 13 is 40nm, and the thickness of cupromanganese rete 14 is 240nm; The thickness of golden film 2 and pin gold film 3 of working is 100nm, thus forms a kind of Nanometer scale Au film electrode based on silicon nitride.In addition, the mass percent of each component of cupromanganese rete 14 material is respectively: Cu78%, Mn13%, Fe5.4%, Si3.1%, C≤0.4%, P≤0.07%, S≤0.03%.
It should be noted that the golden film working area of the prepared Nanometer scale Au film electrode based on silicon nitride is very large, each rete deposit thickness easily controls, and consume the amount of expensive gold also much smaller than gold disc electrode, therefore cost of manufacture is quite cheap; And, the golden film surface unusual light of substrate 1 is smooth, the chemical-biological reaction treatment such as be suitable for carrying out finishing and molecule is fixing, its versatility as electrochemical working electrode is very strong, be better than traditional galvanochemistry gold disc electrode, in the fields such as galvanochemistry, biomedicine, Agriculture and Environment monitoring, there is very important use value and application prospect.
Claims (4)
1. the Nanometer scale Au film electrode based on silicon nitride, it is characterized in that this electrode comprises the substrate (1) being coated with one deck nanometer grade thickness work gold film (2) and pin gold film (3), this pin gold film (3) is connected by scolding tin (6) with the tinsel wire (5) being surrounded by plastic insulating layer (4) outward, junction epoxide-resin glue (7) environmental sealing;
The shape of described substrate (1) is rectangle, and length is 3 ~ 18mm, and wide is 2 ~ 12mm, and epoxide-resin glue environmental sealing is all used in its edge; Work golden film (2) shape for square, the length of side is 2 ~ 12mm; The shape of pin gold film (3) is small rectangle, and length is 1 ~ 6mm, and wide is 1 ~ 4mm;
The preparation process of described substrate (1) is as follows: adopt magnetron sputtering embrane method, by controlling plated film vacuum tightness≤2.0 × 10
-3pa,
at silicon nitride board (11) progressively sputtering sedimentation tin ash rete (12), Titanium rete (13), the cupromanganese rete (14) on the surface of polishing; Cupromanganese rete (14) after polishing, then adopts mask plate method sputtering sedimentation work in its surface gold film (2) and pin gold film (3);
The mass percent of each component of cupromanganese rete (14) material is respectively: Cu72 ~ 82%, Mn8 ~ 18%, Fe3 ~ 6%, Si≤3.5%, C≤0.45%, P≤0.07%, S≤0.03%.
2. Nanometer scale Au film electrode according to claim 1, is characterized in that the material of described tinsel wire (5) is copper wire, aluminium wire or filamentary silver.
3. Nanometer scale Au film electrode according to claim 1, it is characterized in that: polishing silicon nitride board (11) on the surface progressively the thickness of the tin ash rete (12) of sputtering sedimentation be 60 ~ 400nm, the thickness of Titanium rete (13) is 20 ~ 100nm, and the thickness of cupromanganese rete (14) is 60 ~ 400nm.
4. Nanometer scale Au film electrode according to claim 1, is characterized in that: cupromanganese rete (14) is after polishing, and the thickness of deposited work gold film (2) and pin gold film (3) is 20 ~ 400nm in its surface.
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| CN111591953B (en) * | 2020-05-07 | 2022-08-05 | 南京航空航天大学 | Needle-shaped microelectrode and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20120085470A (en) * | 2011-01-24 | 2012-08-01 | 부산대학교 산학협력단 | Biomimetic membrane and biosensor for detecting NADH using the same |
| CN202794099U (en) * | 2012-05-08 | 2013-03-13 | 长沙理工大学 | Electrochemical modified electrode for detecting nitrite and detector |
| CN103344693A (en) * | 2013-07-15 | 2013-10-09 | 长沙理工大学 | Sensing chip method for detecting nitrite |
| CN103344683A (en) * | 2013-07-15 | 2013-10-09 | 长沙理工大学 | Sensing chip method for detecting mercury ions |
| CN203337596U (en) * | 2013-07-15 | 2013-12-11 | 长沙理工大学 | Sensing chip for detecting mercury ions |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120085470A (en) * | 2011-01-24 | 2012-08-01 | 부산대학교 산학협력단 | Biomimetic membrane and biosensor for detecting NADH using the same |
| CN202794099U (en) * | 2012-05-08 | 2013-03-13 | 长沙理工大学 | Electrochemical modified electrode for detecting nitrite and detector |
| CN103344693A (en) * | 2013-07-15 | 2013-10-09 | 长沙理工大学 | Sensing chip method for detecting nitrite |
| CN103344683A (en) * | 2013-07-15 | 2013-10-09 | 长沙理工大学 | Sensing chip method for detecting mercury ions |
| CN203337596U (en) * | 2013-07-15 | 2013-12-11 | 长沙理工大学 | Sensing chip for detecting mercury ions |
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