CN203826370U - Lead framework for small power device - Google Patents
Lead framework for small power device Download PDFInfo
- Publication number
- CN203826370U CN203826370U CN201420230257.1U CN201420230257U CN203826370U CN 203826370 U CN203826370 U CN 203826370U CN 201420230257 U CN201420230257 U CN 201420230257U CN 203826370 U CN203826370 U CN 203826370U
- Authority
- CN
- China
- Prior art keywords
- lead frame
- lead
- muscle
- power device
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 210000003205 muscle Anatomy 0.000 claims description 29
- 239000011521 glass Substances 0.000 claims description 13
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910000863 Ferronickel Inorganic materials 0.000 abstract 2
- 238000004080 punching Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model provides a lead framework for a small power device. The component composition of the lead framework comprises upper and lower sidebands (1) and a plurality of lead framework unit bodies which are arranged in a matrix within the sidebands (1), wherein each lead framework unit body comprises a chip loading area (2) which is used for installing chips, and lead pins (3) which are arranged on upper and lower sides of the chip loading area (2), the number of the lead pins (3) is three, one is arranged on the upper side and two lead pins are arranged on the lower side, the lead pin (3) on the upper side is connected with the chip loading area (2), a dovetail groove (4) is arranged between the lead pin (3) on the upper side and the chip loading area (2), the two lead pins on the lower side are connected through a first connecting rib (5), the length of each lead framework unit body is 2.925mm, and the width is 3.525mm. The material composition structure of the lead framework comprises a ferronickel stamping sheet arranged in the interior and a copper layer which is electroplated on the surface of the ferronickel stamping sheet, and the thickness of the copper layer ranges from 4 to 7 micron. The lead framework has the advantages of simple manufacturing, low cost and good coplanarity.
Description
Technical field
The utility model relates to a kind of semiconductor lead frame version, is specifically related to a kind of low-power device lead frame.
Background technology
Low-power device lead frame is the basic element of character of manufacturing integration circuit semiconductor element.At present, the making of low-power device lead frame is generally first iron-nickel alloy sheet to be carried out to punching press, stamps out after basic system, carries out copper facing on surface, more silver-plated, and then carries out the steps such as follow-up solder taul, encapsulation.Copper facing, silver-plated processing step has not only increased the loaded down with trivial details degree of making of this low-power device lead frame, the also corresponding cost that improved again.In addition, current low-power device lead frame also exists the problems such as coplanarity is not high, stock utilization is low.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of low-power device lead frame simple, cost is low, coplanarity is good of making.
The technical scheme that the utility model adopts is:
A kind of low-power device lead frame, described lead frame comprises upper and lower two sidebands and is positioned at a plurality of lead frame cell cubes that are matrix arrangement of sideband on member forms, described lead frame cell cube comprises slide glass district for chip is installed, is arranged at the terminal pin of upper and lower both sides, slide glass district, the quantity of described terminal pin is three, one of upside, two of downsides, wherein the terminal pin of upside be connected with slide glass district and between be provided with dovetail groove, two terminal pins of downside connect muscle by first and are connected; Between described every two row lead frame cell cubes, be provided with connecting band, described every two row lead frame cell cubes are inner: between horizontal lead frame cell cube, by first, connect muscle the terminal pin of downside is connected, connects muscle the terminal pin of upside is connected by second, first connects muscle and second connects muscle and be connected by pin even; Between described every two row lead frame cell cubes, be provided with connecting band, between the lead frame cell cube of described every two row lead frame cell cube inner transverse, by connecting pin, be connected; Described lead frame cell cube is of a size of long 2.925mm, wide 3.525mm.Described lead frame is comprised of in structure inner iron-nickel alloy stamping and the copper layer that is plated on iron-nickel alloy stamping surface and forms at material, and the thickness of described copper layer is 4-7 μ m.
Compared with prior art, the utlity model has following remarkable advantage and beneficial effect:
(1) between terminal pin and slide glass district, be provided with dovetail groove, this has not only improved the adhesion of this lead frame when follow-up encapsulation, make that lead frame was combined firmly with the plastic packaging material time, difficult drop-off, and plastic packaging material is filled in and can prevents in dovetail groove that the steam of external environment from entering slide glass district, prevent chip groove and affect performance;
(2) between every two row lead frame cell cubes, connecting band is set, the company's of setting pin between the lead frame cell cube of every two row lead frame cell cube inner transverse, between the lead frame cell cube of every two row lead frame cell cube inner transverse, by first, connecting muscle is connected the terminal pin of downside, by second, connecting muscle is connected the terminal pin of upside, and first company's muscle and second connects muscle, and by even pin is connected, this has improved the coplanarity of this lead frame greatly, the internal structure preventing is as slide glass district, the situation such as is moved in the generation perks such as terminal pin or position, thereby guarantee finished product combination property,
(3) lead frame cell cube is of a size of long 2.925mm, wide 3.525mm, this size than lead frame cell cube in prior art size little, in unit are, can stamp out more lead frame cell cube like this, unit area utilization ratio is high, and relative cost reduces;
(4) lead frame only comprises inner iron-nickel alloy stamping and is plated on the copper layer on iron-nickel alloy stamping surface on material forms structure, this illustrates that this lead frame has only carried out once electroplating after punching press is complete, be copper facing, this has effectively simplified the making step of this lead frame; And the thickness of copper layer is 4-7 μ m, can guarantee that this lead frame toasts 30 minutes without bubbling, without peeling off, without variable color in the high temperature oven of 450 ℃, guarantees finished product excellent properties in use.
As preferably, the described two ends that connect pin respectively be connected in first and connect the centre position that muscle and second connects muscle.This structure setting is more reasonable, and both punching press is convenient, makes again the lead frame reasonable integral structure that obtains, and coplanarity is high.
As preferably, the thickness of described copper layer is 5 μ m.The thickness of this copper layer arranges rationally, when guaranteeing finished product serviceability, can effectively save cost.
Accompanying drawing explanation
Shown in Fig. 1 is the structural representation of the utility model low-power device lead frame;
Shown in Fig. 2 is the structure for amplifying schematic diagram of A part in Fig. 1.
Wherein: 1, sideband; 2, slide glass district; 3, terminal pin; 4, dovetail groove; 5, first connects muscle; 6, connecting band; 7, connect pin; 8, second connects muscle.
Embodiment
Below in conjunction with embodiment, the utility model is further described in detail, but is not limited to this.
As shown in Figure 1-2, the present embodiment low-power device lead frame comprises upper and lower two sidebands 1 and is positioned at a plurality of lead frame cell cubes that are matrix arrangement of sideband 1 on member forms, described lead frame cell cube comprises slide glass district 2 for chip is installed, is arranged at the terminal pin 3 of both sides Shang Xia 2, slide glass district, the quantity of described terminal pin 3 is three, one of upside, two of downsides, wherein the terminal pin 3 of upside be connected with slide glass district 2 and between be provided with dovetail groove 4, two terminal pins of downside 3 connect muscle 5 by first and are connected; Between described every two row lead frame cell cubes, be provided with connecting band 6, described every two row lead frame cell cubes inside: even muscle 5 is connected by the terminal pin of downside 3, even muscle 8 is connected by the terminal pin of upside 3 by second to pass through first between horizontal lead frame cell cube, first connects muscle 5 and second connects muscle 8 (be specially first in a upper row lead frame cell cube connect muscle 5 connect muscle 8 with second in next row lead frame cell cube) and is connected by pin 7 even, the two ends of the company's of being specially pin 7 respectively be connected in the first muscle 5 and second centre position of muscle 8 even even; Described lead frame cell cube is of a size of long 2.925mm, wide 3.525mm.Described lead frame is comprised of in structure inner iron-nickel alloy stamping and the copper layer that is plated on iron-nickel alloy stamping surface and forms at material, and the thickness of described copper layer is 5 μ m.
Above-described embodiment of the present utility model is to explanation of the present utility model and can not be for limiting the utility model, and the implication suitable with claims of the present utility model and any change in scope, all should think to be included in the scope of claims.
Claims (3)
1. a low-power device lead frame, described lead frame comprises on member forms, lower two sidebands (1) and be positioned at sideband (1) be a plurality ofly the lead frame cell cubes that matrix is arranged, described lead frame cell cube comprises for the slide glass district (2) of chip is installed, be arranged at the terminal pin (3) of upper and lower both sides, slide glass district (2), it is characterized in that: the quantity of described terminal pin (3) is three, one of upside, two of downsides, wherein the terminal pin of upside (3) be connected with slide glass district (2) and between be provided with dovetail groove (4), two terminal pins (3) of downside connect muscle (5) by first and are connected, between described every two row lead frame cell cubes, be provided with connecting band (6), described every two row lead frame cell cubes are inner: between horizontal lead frame cell cube, by first, connect muscle (5) terminal pin of downside (3) is connected, connects muscle (8) terminal pin of upside (3) is connected by second, first connects muscle (5) and second connects muscle (8) and be connected by pin (7) even, described lead frame cell cube is of a size of long 2.925mm, wide 3.525mm, described lead frame is comprised of in structure inner iron-nickel alloy stamping and the copper layer that is plated on iron-nickel alloy stamping surface and forms at material, and the thickness of described copper layer is 4-7 μ m.
2. low-power device lead frame according to claim 1, is characterized in that: the described two ends that connect pin (7) respectively be connected in the first centre position that connects muscle (5) and second company's muscle (8).
3. low-power device lead frame according to claim 1, is characterized in that: the thickness of described copper layer is 5 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420230257.1U CN203826370U (en) | 2014-05-07 | 2014-05-07 | Lead framework for small power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420230257.1U CN203826370U (en) | 2014-05-07 | 2014-05-07 | Lead framework for small power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203826370U true CN203826370U (en) | 2014-09-10 |
Family
ID=51481840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420230257.1U Expired - Fee Related CN203826370U (en) | 2014-05-07 | 2014-05-07 | Lead framework for small power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203826370U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575822A (en) * | 2015-12-28 | 2016-05-11 | 四川金湾电子有限责任公司 | Method for punching dovetail groove in front surface of lead frame of semiconductor |
| CN111199943A (en) * | 2018-11-16 | 2020-05-26 | 泰州友润电子科技股份有限公司 | Lead frame and lead frame piles up with supporting positioner thereof |
| CN115910974A (en) * | 2023-02-21 | 2023-04-04 | 厦门捷昕精密科技股份有限公司 | High-density semiconductor integrated circuit lead frame |
-
2014
- 2014-05-07 CN CN201420230257.1U patent/CN203826370U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575822A (en) * | 2015-12-28 | 2016-05-11 | 四川金湾电子有限责任公司 | Method for punching dovetail groove in front surface of lead frame of semiconductor |
| CN111199943A (en) * | 2018-11-16 | 2020-05-26 | 泰州友润电子科技股份有限公司 | Lead frame and lead frame piles up with supporting positioner thereof |
| CN111199943B (en) * | 2018-11-16 | 2021-11-12 | 泰州友润电子科技股份有限公司 | Lead frame and lead frame piles up with supporting positioner thereof |
| CN115910974A (en) * | 2023-02-21 | 2023-04-04 | 厦门捷昕精密科技股份有限公司 | High-density semiconductor integrated circuit lead frame |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200605 Address after: 315000 No. 68 Changcao Road, Dongqianhu Industrial Zone, Ningbo City, Zhejiang Province Patentee after: NINGBO HUALONG ELECTRONICS Co.,Ltd. Address before: 315124 Zhejiang city in Ningbo province Dongqian Lake resort Jiuzhai Village Industrial Park Co-patentee before: TAIZHOU HUALONG ELECTRONIC Co.,Ltd. Patentee before: NINGBO HUALONG ELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140910 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |