CN203800020U - Device improving wafer corrosion uniformity - Google Patents
Device improving wafer corrosion uniformity Download PDFInfo
- Publication number
- CN203800020U CN203800020U CN201320892403.2U CN201320892403U CN203800020U CN 203800020 U CN203800020 U CN 203800020U CN 201320892403 U CN201320892403 U CN 201320892403U CN 203800020 U CN203800020 U CN 203800020U
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- Prior art keywords
- wafer
- shaped part
- fan
- spray
- hole
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000005260 corrosion Methods 0.000 title claims abstract description 35
- 230000007797 corrosion Effects 0.000 title claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 42
- 239000007921 spray Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005507 spraying Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
The utility model discloses a device improving wafer corrosion uniformity; the device comprises a wafer carrier; the wafer carrier comprises a rotary mechanism and a fixed mechanism; an upper end of the wafer carrier can bear the wafer; a lower end of the wafer carrier is provided with at least one sector part; the wafer carrier can rotate to drive the wafer or the sector part; the sector part and the wafer are consistent in semi-diameter and positioned on a concentric axis; a surface of the sector part is provided with a spray hole capable of vertically spraying liquid on a back side of the wafer; the spray hole is divided into different sectors in a direction from a center to an arc of the sector part; the spray hole of each sector is independently connected with a pipeline allowing the spray liquid to pass; the pipeline is provided with a valve capable of controlling passing time or/and flow of the spray liquid. The device is simple in structure, simple in operation, improves a phenomenon of a thin center and thick edge of the wafer, thereby finally reaching wafer corrosion uniform effect.
Description
Technical field
The utility model relates to semiconductor device and processing and manufacturing field, more particularly, relates to one and improves wafer corrosion uniformity device.
Background technology
As everyone knows, wet etching and wet-cleaned are just being widely accepted a long time ago in semiconductor production, wet corrosion technique due to its low cost, high production, high reliability with and good selection the advantage such as compare and be widely used.But also inevitably there are many problems in wet corrosion technique, as the problem of the corrosion lack of homogeneity of crystal column surface in the middle of the process of application.Crystal column surface corrodes inhomogeneous meeting directly affects the quality of subsequent technique, thereby causes the degradation of integrated circuit (IC) chip, and conforming product rate declines.
In existing technique, utilize spray arm structure to spray the crystal column surface of chemical liquid to rotation, thereby can erode the unwanted oxide-film of crystal column surface or coating rete with crystal column surface material generation chemical reaction, crystal round fringes linear speed is much larger than center linear velocity, in the time that chemical liquid is evenly vertically ejected into crystal column surface from spray arm along wafer radial direction, edge thickness of liquid film is significantly less than center, and corrosion rate is slower.In corrosion process, always have the fast and slow problem of marginal position corrosion rate of wafer centre position corrosion rate, as shown in Figure 1, crystal column surface is easy to occur intermediate thin, the sunk structure that edge is thick, and corrosion uniformity missionary society has a strong impact on wafer quality.Therefore, the problem of solution wafer corrosion lack of homogeneity becomes those skilled in the art's problem demanding prompt solution.
Utility model content
The purpose of this utility model is to provide one to improve wafer corrosion uniformity device, corrodes inhomogeneous problem thereby solve wafer.
The utility model is to solve the problems of the technologies described above the technical scheme adopting to be to provide one and to improve wafer corrosion uniformity device, comprises wafer carrier, described wafer carrier upper end carrying wafer, and described wafer carrier comprises rotating mechanism and fixed mechanism; Described wafer carrier lower end is provided with at least one fan-shaped part, described wafer carrier is rotatable and drive wafer or fan-shaped part, described fan-shaped part is consistent with wafer radius and be positioned in concentric shafts with wafer, described fan-shaped part surface is provided with can be to the spray-hole of the vertical atomizing of liquids of wafer rear, according to fan-shaped part, the direction from the center of circle to circular arc is divided into different sectors to described spray-hole, the pipeline that the spray-hole separate connection of described each sector is passed through for atomizing of liquids, described pipeline is provided with can control time that atomizing of liquids passes through or/and the valve of flow.
Preferably, the spray-hole of described each sector connects two-way pipeline, on two-way pipeline, is respectively equipped with and can controls the valve that atomizing of liquids passes through.
Preferably, described wafer is arranged on rotating mechanism, and described fan-shaped part is arranged on fixed mechanism.
Preferably, described fan-shaped part is arranged on rotating mechanism, and described wafer is arranged on fixed mechanism.
Preferably, described spray-hole distributes at fan-shaped part surface uniform.
Preferably, the opposite direction at described fan-shaped part trunnion axis center is provided with strip shape body, and described strip shape body is connected with the circle centre position of fan-shaped part, and described strip shape body is provided with some dry holes of passing through for dry gas.
Preferably, the length of described strip shape body is consistent with wafer radius.
The one that the utility model provides is improved wafer corrosion uniformity device and method, the time of passing through by valve control atomizing of liquids is or/and flow, thereby improve wafer intermediate thin, phenomenon that edge is thick, further, the flow of the cold jetting fluid passing through by valve control pipeline, mix with thermojet liquid, thereby make the temperature difference of each sector spray-hole atomizing of liquids, the direction from the center of circle to circular arc increases gradually according to fan-shaped part to make the temperature of jetting fluid, finally reaches wafer and corrodes uniform effect.
Brief description of the drawings
In order to be illustrated more clearly in the technical scheme in the utility model embodiment, to the accompanying drawing of required use in embodiment be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of existing wafer;
Fig. 2 is the structural representation that the utility model the first embodiment improves wafer corrosion uniformity device;
Fig. 3 is the structural representation that the utility model the 3rd embodiment improves wafer corrosion uniformity device;
Fig. 4 is the schematic diagram that the utility model the first embodiment improves wafer corrosion uniformity device;
Fig. 5 is the schematic diagram that the utility model the second embodiment improves wafer corrosion uniformity device.
Number in the figure is described as follows:
1, wafer, 2, fan-shaped part, 3, spray-hole, 4, pipeline, 41, the first pipeline, 42, second pipe, 5, valve, 6, strip shape body, 7, dry hole.
Embodiment
Below in conjunction with Fig. 1 to Fig. 5, the one in the utility model being improved to wafer corrosion uniformity device and method is further described:
As shown in Figure 1, existing wafer 1 surface is easy to occur intermediate thin, the sunk structure that edge is thick, and corrosion uniformity missionary society has a strong impact on wafer quality.
Embodiment mono-:
Please refer to Fig. 2 and Fig. 4, the one that the utility model provides is improved wafer corrosion uniformity device, comprises wafer carrier (not marking in figure), described wafer carrier upper end carrying wafer 1, and described wafer carrier comprises rotating mechanism and fixed mechanism, described wafer carrier lower end is provided with at least one fan-shaped part 2, described wafer carrier is rotatable and drive wafer 1 or fan-shaped part 2, described fan-shaped part 2 is consistent with wafer 1 radius and be positioned in concentric shafts with wafer 1, described fan-shaped part 2 surfaces are provided with can be to the spray-hole 3 of the wafer 1 vertical atomizing of liquids in the back side, according to fan-shaped part 2, the direction from the center of circle to circular arc is divided into different sectors to described spray-hole 3, the pipeline 4 that spray-hole 3 separate connection of described each sector are passed through for atomizing of liquids, described pipeline 4 is provided with can control time that atomizing of liquids passes through or/and the valve 5 of flow.
Described valve 5 control to the time of wafer 1 back side atomizing of liquids according to fan-shaped part 2 direction from the center of circle to circular arc elongated gradually; Or/and to the flow of wafer 1 back side atomizing of liquids, according to fan-shaped part 2, the direction from the center of circle to circular arc becomes large gradually.
Wherein, the distribution density of described spray-hole 3 is uniformly distributed on fan-shaped part 2.Described atomizing of liquids is preferably UPW (being ultra-pure water), by valve 5 control time length that atomizing of liquids passes through or/flow, thereby improve wafer 1 intermediate thin, phenomenon that edge is thick, when required processing region wafer 1 thickness is when thicker, the time of opening control valve 5 is long or/and flow is larger; In the time of required processing region wafer 1 thinner thickness, the time of opening control valve 5 is shorter or/and flow is less, by controlling the switching time of valve 5 on zones of different pipeline, solves the problem of wafer corrosion lack of homogeneity.
Further, according to fan-shaped part 2, the direction from the center of circle to circular arc becomes greatly the large I of described spray-hole 3 gradually, by the change to pore size, controls the size of atomizing of liquids flow, thereby changes the problem of wafer corrosion lack of homogeneity.
Embodiment bis-:
Please refer to Fig. 2 and Fig. 5, on the basis of embodiment mono-, the spray-hole 3 in described each region connects two-way pipeline 4, on two-way pipeline 4, be respectively equipped with and can control the valve 5 that jetting fluid passes through, described jetting fluid is preferably UPW, valve 5 on the first pipeline 41 is controlled the flow that hot ultra-pure water (being Hot UPW) passes through, and the valve 5 on second pipe 42 is controlled the flow that cold ultra-pure water (being Cold UPW) passes through.
In the present embodiment, the constant flow that described thermojet liquid passes through, according to fan-shaped part 2, the direction from the center of circle to circular arc diminishes the flow that described cold jetting fluid passes through gradually.By controlling the flow of the cold jetting fluid that each sector pipeline 4 passes through, cold jetting fluid is mixed with thermojet liquid, make the spray-hole 3 of each sector spray the jetting fluid of different temperatures, the direction from the center of circle to circular arc increases gradually according to fan-shaped part 2 to make the temperature of the jetting fluid that described spray-hole 3 sprays, thereby improves wafer 1 intermediate thin, phenomenon that edge is thick.
Further, the temperature of the thermojet liquid that described the first pipeline 41 passes through is permanent hot temperature, and the temperature of the cold jetting fluid that described second pipe 42 passes through simultaneously can the direction from the center of circle to circular arc increase gradually according to fan-shaped part 2.
Embodiment tri-:
Please refer to Fig. 3, on the basis of embodiment mono-or embodiment bis-, the opposite direction at described fan-shaped part 2 trunnion axis centers is provided with strip shape body 6, and described strip shape body 6 is connected with the circle centre position of fan-shaped part 2, and described strip shape body 6 is provided with some dry holes 7 of passing through for dry gas.Preferably, the length of described strip shape body 6 is consistent with wafer 1 radius, and the gas passing through in described dry hole 7 is nitrogen.
In order further to improve the utility model, when described wafer 1 is arranged on rotating mechanism, described fan-shaped part 2 is arranged on fixed mechanism; Described wafer 1 does relative rotary motion with fan-shaped part 2, and described wafer 1 horizontally rotates motion, and described fan-shaped part 2 maintains static, and the spray-hole 3 on described fan-shaped part 2 is to the wafer 1 vertical atomizing of liquids in the back side.
Or described fan-shaped part 2 is arranged on rotating mechanism, described wafer 1 is arranged on fixed mechanism; Described wafer 1 maintains static, and described fan-shaped part 2 horizontally rotates motion, and the spray-hole 3 on described fan-shaped part 2 is to the wafer 1 vertical atomizing of liquids in the back side.
The utility model also provides one to improve wafer to corrode inhomogeneity method, comprise the following steps:
Step 1 S1: provide and treat uniform semiconductor crystal wafer;
Step 2 S2: default atomizing of liquids is by the time of each sector pipeline, to the time of wafer rear atomizing of liquids according to fan-shaped part the direction from the center of circle to circular arc elongated gradually; Or/and default atomizing of liquids passes through the flow of each sector pipeline, to the flow of wafer rear atomizing of liquids, according to fan-shaped part, the direction from the center of circle to circular arc becomes large gradually;
Step 3 S3: open and improve the valve on the pipeline of each sector in wafer corrosion uniformity device;
Step 4 S4: or/and flow carries out liquid injection to wafer rear, the direction from the center of circle to circular arc increases the temperature of described spray-hole atomizing of liquids gradually according to fan-shaped part according to the default time.
Step 5 S5: close the valve on pipeline, complete crystal column surface corrosion evenly.
Preferably, in described step 2 S2, each sector comprises two-way pipeline, and the valve on the first pipeline is used for controlling thermojet liquid, and the valve on second pipe is used for controlling cold jetting fluid; The constant flow that wherein said thermojet liquid passes through, according to fan-shaped part, the direction from the center of circle to circular arc diminishes the flow that described cold jetting fluid passes through gradually.Further, the temperature of the thermojet liquid that in described step 4 S4, each region is passed through is permanent hot temperature, and according to fan-shaped part, the direction from the center of circle to circular arc increases the temperature of the cold jetting fluid that described each region is passed through gradually.
Preferably, in described step 4 S4, also comprise that strip shape body by being provided with dry hole carries out gas to wafer rear dry, the dry nitrogen drying that is preferably of described gas.
The one that the utility model provides is improved wafer corrosion uniformity device, the time length of passing through by valve control atomizing of liquids, thereby improve wafer intermediate thin, phenomenon that edge is thick, further, the flow of the cold jetting fluid of crossing by valve control the first device for cleaning pipeline, the thermojet liquid passing through with second pipe mixes, thereby make the temperature difference of each sector spray-hole atomizing of liquids, the direction from the center of circle to circular arc increases gradually according to fan-shaped part to make the temperature of jetting fluid, finally reaches wafer and corrodes uniform effect.
Above-described is only preferred embodiment of the present utility model; described embodiment is not in order to limit scope of patent protection of the present utility model; therefore the equivalent structure that every utilization specification of the present utility model and accompanying drawing content are done changes, and in like manner all should be included in protection range of the present utility model.
Claims (7)
1. one kind is improved wafer corrosion uniformity device, comprise wafer carrier, described wafer carrier comprises rotating mechanism and fixed mechanism, described wafer carrier upper end carrying wafer, it is characterized in that, described wafer carrier lower end is provided with at least one fan-shaped part, described wafer carrier is rotatable and drive wafer or fan-shaped part, described fan-shaped part is consistent with wafer radius and be positioned in concentric shafts with wafer, described fan-shaped part surface is provided with can be to the spray-hole of the vertical atomizing of liquids of wafer rear, according to fan-shaped part, the direction from the center of circle to circular arc is divided into different sectors to described spray-hole, the pipeline that the spray-hole separate connection of described each sector is passed through for atomizing of liquids, described pipeline is provided with can control time that atomizing of liquids passes through or/and the valve of flow.
2. the wafer corrosion uniformity device that improves according to claim 1, is characterized in that, the spray-hole of described each sector connects two-way pipeline, on two-way pipeline, is respectively equipped with and can controls the valve that atomizing of liquids passes through.
3. the wafer corrosion uniformity device that improves according to claim 1, is characterized in that, described wafer is arranged on rotating mechanism, and described fan-shaped part is arranged on fixed mechanism.
4. the wafer corrosion uniformity device that improves according to claim 1, is characterized in that, described fan-shaped part is arranged on rotating mechanism, and described wafer is arranged on fixed mechanism.
5. the wafer corrosion uniformity device that improves according to claim 1, is characterized in that, described spray-hole distributes at fan-shaped part surface uniform.
6. corrode uniformity device according to the arbitrary described wafer that improves of claim 1～5, it is characterized in that, the opposite direction at described fan-shaped part trunnion axis center is provided with strip shape body, described strip shape body is connected with the circle centre position of fan-shaped part, and described strip shape body is provided with some dry holes of passing through for dry gas.
7. the wafer corrosion uniformity device that improves according to claim 6, is characterized in that, the length of described strip shape body is consistent with wafer radius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320892403.2U CN203800020U (en) | 2013-12-31 | 2013-12-31 | Device improving wafer corrosion uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320892403.2U CN203800020U (en) | 2013-12-31 | 2013-12-31 | Device improving wafer corrosion uniformity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203800020U true CN203800020U (en) | 2014-08-27 |
Family
ID=51382214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320892403.2U Expired - Lifetime CN203800020U (en) | 2013-12-31 | 2013-12-31 | Device improving wafer corrosion uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203800020U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700610A (en) * | 2013-12-31 | 2014-04-02 | 北京七星华创电子股份有限公司 | Device and method for improving wafer etching uniformity |
| WO2020078191A1 (en) * | 2018-10-18 | 2020-04-23 | 北京北方华创微电子装备有限公司 | Spraying device and cleaning apparatus |
-
2013
- 2013-12-31 CN CN201320892403.2U patent/CN203800020U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700610A (en) * | 2013-12-31 | 2014-04-02 | 北京七星华创电子股份有限公司 | Device and method for improving wafer etching uniformity |
| CN103700610B (en) * | 2013-12-31 | 2017-01-25 | 北京七星华创电子股份有限公司 | Device and method for improving wafer etching uniformity |
| WO2020078191A1 (en) * | 2018-10-18 | 2020-04-23 | 北京北方华创微电子装备有限公司 | Spraying device and cleaning apparatus |
| CN111081585A (en) * | 2018-10-18 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Spray device and cleaning equipment |
| CN111081585B (en) * | 2018-10-18 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Spray device and cleaning equipment |
| US11823917B2 (en) | 2018-10-18 | 2023-11-21 | Beijing Naura Microelectronics Equipment Co., Ltd. | Spray device and cleaning apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140827 |
|
| CX01 | Expiry of patent term |