CN203774331U - Transparent display device - Google Patents
Transparent display device Download PDFInfo
- Publication number
- CN203774331U CN203774331U CN201420185354.3U CN201420185354U CN203774331U CN 203774331 U CN203774331 U CN 203774331U CN 201420185354 U CN201420185354 U CN 201420185354U CN 203774331 U CN203774331 U CN 203774331U
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- Prior art keywords
- type semiconductor
- transparent area
- silicon solar
- solar cell
- display unit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model provides a transparent display device and relates to the technical field of display. A silicon solar battery is arranged in a transparent area of the display device, and light energy is absorbed in a direction vertical to the light transmission direction of the transparent area and converted into electric energy. The display area of the transparent display device comprises a transparent area and a non-transparent area. At least one silicon solar battery is arranged in part of the transparent area, and the silicon solar battery absorbs light energy along a direction vertical to the light transmission direction of the transparent area and converts the light energy into electric energy.
Description
Technical field
The utility model relates to Display Technique field, relates in particular to a kind of transparent display.
Background technology
Along with the continuous progress of Display Technique, new Display Technique is constantly proposed by people and realizes, and transparent demonstration product is a kind of so novel demonstration product.Transparent demonstration has wide range of application, can merge the technology such as multi-point touch, intelligent display, terminal as public information display, be used in the every field such as general merchandise display window, refrigerator doors perspective, windshield glass of automobile, automatic vending machine, there is the synergies such as displaying, interaction, advertisement, transparent demonstration product is due to its unique use scenes and can realize intelligentized scene switching, makes it in special type, show that the application in field also more and more receives publicity.
The displaying principle of the transparent Display Technique of OLED display unit as shown in Figure 1, display floater comprises a plurality of display units 100, each display unit comprises the sub-pixel 10 (grid line 31 and data wire 32 intersect to form a plurality of sub-pixels 10) of red (R), green (G), blue (B) three kinds of primary colours, each sub-pixel 10 comprises luminous zone 11 and transparent area 12, wherein, luminous zone 11 shows by luminous realizations such as Organic Light Emitting Diodes, transparent area 12 does not arrange any dot structure, is mainly used in printing opacity.And along with the raising of the brightness of luminous zone 11, the light of transparent area 12 printing opacities is also just more, thereby has improved the light transmittance of pixel, has reached the effect of transparent demonstration.
Utility model content
Embodiment of the present utility model provides a kind of transparent display, by the transparent area in described display unit, silicon solar cell is set, and the direction vertical in the printing opacity direction with transparent area absorbs luminous energy and be converted into electric energy.
For achieving the above object, embodiment of the present utility model adopts following technical scheme:
The utility model embodiment provides a kind of transparent display, the viewing area of described transparent display comprises transparent area and light tight district, in the subregion of described transparent area, be provided with at least one silicon solar cell, described silicon solar cell absorbs luminous energy and is converted into electric energy along the vertical direction of the printing opacity direction with transparent area.
Optionally, described silicon solar cell comprises P type semiconductor and N type semiconductor, and described P type semiconductor and described N type semiconductor are arranged on same layer.
Optionally, between described P type semiconductor and described N type semiconductor, be provided with intrinsic layer.
Optionally, described P type semiconductor and described N type semiconductor are heavy doping.
Optionally, described display unit also comprises grid line and data wire, and the P type semiconductor of described silicon solar cell or N type semiconductor directly contact electrical connection with described grid line and/or described data wire, to described grid line and/or data wire, provide the signal of telecommunication.
Optionally, described viewing area comprises a plurality of sub-pixels, and each sub-pixel comprises transparent area and light tight district, and described at least one, the transparent area of sub-pixel is provided with silicon solar cell.
Optionally, described in each, the transparent area of sub-pixel is provided with a silicon solar cell.
Optionally, described display unit is OLED display unit, and described in each, sub-pixel comprises luminous zone and transparent area.
Optionally, described transparent area is provided with silicon solar cell near Yi Ce subregion, luminous zone.
Embodiment of the present utility model provides a kind of transparent display, the subregion of the transparent area of described transparent display is provided with at least one silicon solar cell, and described silicon solar cell absorbs luminous energy along the vertical direction of the printing opacity direction with transparent area and is converted into electric energy, can be applicable to power supply or miscellaneous part or the equipment of display device, to save the energy, realize effective utilization of photoelectricity.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is existing transparent display schematic diagram;
A kind of transparent display schematic diagram that Fig. 2 provides for the utility model embodiment;
Fig. 3 is the A-A ' schematic cross-section of the display unit shown in Fig. 2;
Fig. 4 is the B-B ' schematic cross-section of the display unit shown in Fig. 2;
A kind of method schematic diagram that directly forms silicon solar cell on underlay substrate that Fig. 5 provides for the utility model embodiment.
Reference numeral:
100-display unit; 10-sub-pixel; 11-luminous zone; 12-transparent area; 21-P type semiconductor; 22-N type semiconductor; 31-grid line; 32-data wire.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Embodiment based in the utility model, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
The utility model embodiment provides a kind of transparent display, the viewing area of described transparent display comprises transparent area and light tight district, in the subregion of described transparent area, be provided with at least one silicon solar cell, described silicon solar cell absorbs luminous energy and is converted into electric energy along the vertical direction of the printing opacity direction with transparent area.
Traditional OLED display unit of take is example, the structures such as the organic electroluminescent that OLED display unit has (EL) element and drive circuit are all opaque conventionally, when design, these nontransparent device height can be integrated in to inner " region " that there is no nontransparent equipment of each pixel, raising along with pixel demonstration GTG value, all the other transparent region transmitted lights of pixel are also just more, thereby improved the light transmittance of pixel, reached transparent display effect.
It should be noted that, the viewing area of transparent display comprises transparent area and light tight district, and wherein said light tight district is mainly used in a bright pixel, and transparent area is mainly used in printing opacity and makes display unit can see object below etc.The transparent area of viewing area and the position relationship in light tight district can be multiple.Can be for example to make a pixel cell comprise red, green, blue and a transparent transparent area, can be also that transparent area and light tight district arrange with the form of between-line spacing etc.Particular location for transparent area, viewing area and light tight district is related to that the utility model embodiment does not do concrete restriction.
The described subregion in described transparent area is provided with at least one silicon solar cell, and described silicon solar cell absorbs luminous energy along the vertical direction of the printing opacity direction with transparent area.It should be noted that, as shown in Figure 2 and Figure 3, the printing opacity direction of transparent area 12 is generally the direction vertical with underlay substrate, be the direction of arrow of dotted line in Fig. 3, in the utility model embodiment, described silicon solar cell mainly absorbs the luminous energy of the direction vertical with the printing opacity direction of transparent area 12, the i.e. direction of arrow shown in Fig. 2, Fig. 3, and be electric energy by transform light energy, can be applicable to other electronic equipments.
A kind of transparent display that the utility model embodiment provides, the subregion of the transparent area of described transparent display is provided with at least one silicon solar cell, and described silicon solar cell absorbs luminous energy and is converted into electric energy along the vertical direction of the printing opacity direction with transparent area, can be applicable to power supply or miscellaneous part or the equipment of display device, to save the energy, realize effective utilization of photoelectricity.
Optionally, as shown in Figure 2 and Figure 3, described silicon solar cell comprises P type semiconductor 21 and N type semiconductor 22, and described P type semiconductor 21 and described N type semiconductor 22 are arranged on same layer.
It should be noted that the P type semiconductor triad that adulterates in Semiconducting Silicon Materials or germanium crystal; The N type semiconductor pentad that adulterates in Semiconducting Silicon Materials or germanium crystal.The principle of silicon solar cell is P type semiconductor and N type semiconductor while combining, and in two kinds of semi-conductive interface region, can form a special film be PN junction.This is that the free electron of N type semiconductor is many because the hole of P type semiconductor is many.Occur concentration difference, the electrons in N district is diffused into P district, and the hole in P district can be diffused into N district, once diffusion has just formed " internal electric field " that is pointed to P by N, to stop the carrying out of diffusion.Until reach after balance, just formed a special thin layer, just formed PN junction.When being subject to illumination, in PN junction, move toward p type island region in the hole of N type semiconductor.And electronics WangNXing district in p type island region moves, thereby form CongNXing district to the electric current of p type island region, then in PN junction, form electrical potential difference, this has just formed power supply.
In the utility model embodiment, as shown in Figure 2, described P type semiconductor 21 and described N type semiconductor 22 are arranged on same layer, and wherein P type semiconductor 21 is the side near light.Can certainly be that N type semiconductor 22 is the side near light, it all affect the action principle of silicon solar cell.The utility model embodiment only be take and is shown in the drawingsly elaborated as example.
Optionally, between described P type semiconductor and described N type semiconductor, be provided with intrinsic layer.Form PIN type solar cell, the sensitivity of sensitization and probe radiation is better.
Optionally, described P type semiconductor and described N type semiconductor are heavy doping.It should be noted that, the magnitude of current that P type semiconductor and described N type semiconductor are its generation of heavy doping is large.Certainly, according to the power supply object of silicon solar cell, described P type semiconductor and described N type semiconductor can be also light dopes etc.
Optionally, as shown in Figure 2, Figure 4 shows, described display unit also comprises grid line 31 and data wire 32, and the P type semiconductor of described silicon solar cell or N type semiconductor directly contact electrical connection with described grid line 31 and/or described data wire 32, to described grid line 31 and/or data wire 32, provide the signal of telecommunication.
As shown in Figure 4, the utility model embodiment directly contacts electrical connection with the P type semiconductor of described silicon solar cell with described grid line 31, and to described grid line 31, providing the signal of telecommunication is example.It should be noted that, it can be to be directly connected with grid line and/or described data wire by via hole and metal wire that P type semiconductor directly contacts electrical connection with described grid line and/or described data wire, to grid line and/or described data wire, provides the signal of telecommunication.Certainly, the electric energy of described silicon solar cell can also connect other conductive parts, to other conductive parts, provides the signal of telecommunication.P type semiconductor or N type semiconductor can also be to be electrically connected to other conductive parts by wire etc.
Optionally, described viewing area comprises a plurality of sub-pixels, and each sub-pixel comprises transparent area and light tight district, and described at least one, the transparent area of sub-pixel is provided with silicon solar cell.It is described that described at least one, be provided with silicon solar cell can be only in the transparent area of corresponding red sub-pixel, silicon solar cell to be set in the transparent area of sub-pixel.Can also be, in the transparent area of corresponding red sub-pixel and blue subpixels, silicon solar cell is set, and in the transparent area of corresponding green sub-pixels, silicon solar energy battery etc. is not set.Can be, in the transparent area of sub-pixel partly, silicon solar cell is set, to produce electric energy by silicon solar cell, other sub-pixels arrange silicon solar cell, to guarantee the transparent Presentation Function of display unit.
Preferably, described in each, the transparent area of sub-pixel is provided with a silicon solar cell.As shown in Figure 2, in the transparent area of corresponding red (R) sub-pixel, blueness (G) sub-pixel and green (B) sub-pixel, silicon solar cell is all set, can further increases like this electric energy conversion amount of silicon solar cell on panel.
Optionally, described display unit is OLED display unit, and described in each, sub-pixel comprises luminous zone and transparent area.As shown in Figure 2, red sub-pixel 10 comprises 11He transparent area, luminous zone 12.It should be noted that, because OLED display unit is self-emission display apparatus, sub-pixel 10 comprises 11He transparent area, luminous zone 12.When display unit is liquid crystal indicator, described sub-pixel can be to comprise pixel region and transparent area, in described pixel region, by pixel electrode and common electrode drive liquid crystal deflection, realize and showing, at transparent area display unit printing opacity light, reach transparent display effect.
Optionally, described transparent area is provided with silicon solar cell near Yi Ce subregion, luminous zone.As shown in Figure 2, transparent area 12 is near the region division silicon solar cell of luminous zone 11 1 sides.Can reduce the area that silicon solar cell takies too many luminous zone like this, improve the transparent effect of transparent display.
The utility model embodiment provides a kind of manufacture method of transparent display, and the viewing area of described transparent display comprises transparent area and light tight district, and described method comprises:
On the underlay substrate of subregion, described transparent area, directly form silicon solar cell, described silicon solar cell absorbs luminous energy and is converted into electric energy along the vertical direction of the printing opacity direction with transparent area.
Optionally, as shown in Figure 5, the described silicon solar cell that directly forms on the underlay substrate of subregion, described transparent area specifically comprises:
Step 101, on underlay substrate, form semiconductor layer, wherein, described semiconductor layer comprises corresponding P type semiconductor part and corresponding N type semiconductor part.
The described semiconductor layer that forms on underlay substrate can be on underlay substrate, to form semiconductive thin film, and forms by composition technique the semiconductor pattern that comprises corresponding P type semiconductor part and corresponding N type semiconductor part.
Step 102, the corresponding P type semiconductor part of described semiconductor layer and corresponding N type semiconductor part are carried out respectively to ion doping, form P type semiconductor and N type semiconductor.
Optionally, describedly the corresponding P type semiconductor part of described semiconductor layer and corresponding N type semiconductor partly carried out respectively to ion doping specifically comprise:
Utilize the first mask plate partly to carry out ion doping to the corresponding P type semiconductor of described semiconductor and form P type semiconductor;
Utilize the second mask plate partly to carry out ion doping to the corresponding N type semiconductor of described semiconductor and form N type semiconductor.
Utilize the first mask plate to the corresponding P type semiconductor of described semiconductor partly carry out ion doping form P type semiconductor concrete can be only the corresponding P type semiconductor of semiconductor layer partly to be exposed by the first mask plate, and other parts are blocked, so that partly being carried out to ion doping, the corresponding P type semiconductor exposing forms P type semiconductor.Utilizing the second mask plate partly to carry out ion doping formation N type semiconductor to the corresponding N type semiconductor of described semiconductor can be specifically only the corresponding N type semiconductor of semiconductor layer partly to be exposed by the second mask plate, and other parts are blocked, so that partly being carried out to ion doping, the corresponding N type semiconductor exposing forms N type semiconductor.
Optionally, described semiconductor layer also comprises: active semi-conductor.Owing to being also formed with thin-film transistor on underlay substrate in order to control pixel charging, described semiconductor layer also comprises that active semi-conductor can be on underlay substrate, to form semiconductive thin film, and is formed and comprised corresponding P type semiconductor part, corresponding N type semiconductor part and active semi-conductor pattern by composition technique.Can further reduce manufacture craft like this, reduce production costs.
Optionally, described method also comprises:
On underlay substrate, form grid metal level and source and leak metal level, wherein, described grid metal level comprises grid line, and described source is leaked metal level and comprised data wire;
Described grid line and/or described data wire directly contact electrical connection with P type semiconductor or the N type semiconductor of described silicon solar cell.
It should be noted that, the film improving except the utility model embodiment on underlay substrate or layer structure, also comprise other film or layer structure to realize Presentation Function.Wherein, on underlay substrate, be formed with grid metal level, comprise grid line and grid, metal level is leaked in source, comprises data wire and source electrode and drain electrode, and grid line provides signal to grid, data wire provides source signal to source electrode, drain electrode is charged to pixel electrode, wherein, and three utmost points that grid, source electrode and drain electrode are thin-film transistor.
In the utility model embodiment, described grid line and/or described data wire directly contact electrical connection with P type semiconductor or the N type semiconductor of described silicon solar cell, the electric energy of silicon solar cell conversion can be directly applied to driving thin-film transistor.Certainly, the electric energy of silicon solar cell conversion can also be by other voltage processing etc. for other conductive parts.
The above; it is only embodiment of the present utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of described claim.
Claims (9)
1. a transparent display, the viewing area of described transparent display comprises transparent area and light tight district, it is characterized in that, in the subregion of described transparent area, be provided with at least one silicon solar cell, described silicon solar cell absorbs luminous energy and is converted into electric energy along the vertical direction of the printing opacity direction with transparent area.
2. display unit according to claim 1, is characterized in that, described silicon solar cell comprises P type semiconductor and N type semiconductor, and described P type semiconductor and described N type semiconductor are arranged on same layer.
3. display unit according to claim 2, is characterized in that, between described P type semiconductor and described N type semiconductor, is provided with intrinsic layer.
4. according to the display unit described in claim 2 or 3, it is characterized in that, described P type semiconductor and described N type semiconductor are heavy doping.
5. according to the display unit described in claim 2 or 3, it is characterized in that, described display unit also comprises grid line and data wire, the P type semiconductor of described silicon solar cell or N type semiconductor directly contact electrical connection with described grid line and/or described data wire, to described grid line and/or data wire, provide the signal of telecommunication.
6. display unit according to claim 1, is characterized in that, described viewing area comprises a plurality of sub-pixels, and each sub-pixel comprises transparent area and light tight district, and described at least one, the transparent area of sub-pixel is provided with silicon solar cell.
7. display unit according to claim 6, is characterized in that, described in each, the transparent area of sub-pixel is provided with a silicon solar cell.
8. display unit according to claim 7, is characterized in that, described display unit is OLED display unit, and described in each, sub-pixel comprises luminous zone and transparent area.
9. display unit according to claim 8, is characterized in that, described transparent area is provided with silicon solar cell near Yi Ce subregion, luminous zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420185354.3U CN203774331U (en) | 2014-04-16 | 2014-04-16 | Transparent display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420185354.3U CN203774331U (en) | 2014-04-16 | 2014-04-16 | Transparent display device |
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| Publication Number | Publication Date |
|---|---|
| CN203774331U true CN203774331U (en) | 2014-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420185354.3U Withdrawn - After Issue CN203774331U (en) | 2014-04-16 | 2014-04-16 | Transparent display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985734A (en) * | 2014-04-16 | 2014-08-13 | 京东方科技集团股份有限公司 | Transparent display device and manufacturing method thereof |
-
2014
- 2014-04-16 CN CN201420185354.3U patent/CN203774331U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985734A (en) * | 2014-04-16 | 2014-08-13 | 京东方科技集团股份有限公司 | Transparent display device and manufacturing method thereof |
| WO2015158089A1 (en) * | 2014-04-16 | 2015-10-22 | 京东方科技集团股份有限公司 | Transparent display device and manufacturing method therefor |
| US9502479B2 (en) | 2014-04-16 | 2016-11-22 | Boe Technology Group Co., Ltd. | Transparent display device and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140813 Effective date of abandoning: 20170308 |