CN102403334B - Organic electroluminescent display device - Google Patents

Organic electroluminescent display device Download PDF

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Publication number
CN102403334B
CN102403334B CN201110315742.XA CN201110315742A CN102403334B CN 102403334 B CN102403334 B CN 102403334B CN 201110315742 A CN201110315742 A CN 201110315742A CN 102403334 B CN102403334 B CN 102403334B
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emission layer
red
green
pixel region
row
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CN102403334A (en
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朴钟贤
柳俊锡
金钟成
李康柱
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LG Display Co Ltd
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LG Display Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components

Abstract

The present invention relates to an organic electroluminescent display device including first to fourth pixel regions each including red, green and blue sub-pixel regions, each of the first to fourth pixel regions being divided into first and second column, and the first column being divided into first and second rows, wherein a red sub-pixel region and a green sub-pixel region are respectively arranged in the first and second rows, and a blue sub-pixel region is arranged in the second column; a red emitting layer formed in the red sub-pixel region; a green emitting layer formed in the green sub-pixel region; and a blue emitting layer formed in the blue sub-pixel region.

Description

Organic elctroluminescent device
Technical field
The present invention relates to ORGANIC ELECTROLUMINESCENCE DISPLAYS (OELD) device, more specifically, relate to and there is high aperture ratio and high-resolution OELD device.
Background technology
OELD device as new flat-panel display device is self-emission type.OELD device has the characteristics such as excellent visual angle, contrast.And, because OELD device does not need backlight assembly, therefore OELD light weight and low in energy consumption.In addition, OELD device has the advantages such as the high speed of response, low production cost.In addition, all elements of OLED are all solid phases, and this device is able to firm antagonism external impact.Especially, in production cost, tool has great advantage.The manufacture process of OELD device is very simple and need depositing device and sealed in unit.OELD device can be called as organic light-emitting diode device.
In active array type OELD device, filled in holding capacitor for the voltage controlling pixel current, thus the level of electric current is maintained to next frame.
Fig. 1 is the circuit diagram of a subpixel area of correlation technique OELD device.As shown in Figure 1, OELD device comprises select lines " GL ", data wire " DL ", power line " PL ", switching thin-film transistor (TFT) " Ts ", holding capacitor " Cst ", drive TFT " Td " and light-emitting diode " Del ".Select lines " GL " is intersected with each other to limit subpixel area " SP " with data wire " DL ".Switching TFT " Ts " is connected to select lines and data wire " GL " and " DL ", and drive TFT " Td " and holding capacitor " Cst " are connected to switching TFT " Ts " and power line " PL ".Light-emitting diode " Del " is connected to drive TFT " Td ".
When switching TFT " Ts " is by the gating signal conducting applied by select lines " GL ", the data-signal from data wire " DL " is applied to the grid of drive TFT " Td " and the electrode of holding capacitor " Cst ".When drive TFT " Td " is by data-signal conducting, the electric current from power line " PL " is applied to light-emitting diode " Del ".As a result, light-emitting diode " Del " is luminous.In this case, when drive TFT " Td " is switched on, determine the levels of current being applied to light-emitting diode " Del " from power line " PL ", thus light-emitting diode " Del " can produce gray scale.When switching TFT " Ts " is cut off, holding capacitor " Cst " be used for maintain drive TFT " Ts " grid voltage, therefore, even if switching TFT " Ts " is cut off, also next frame can be maintained until from the levels of current being applied to light-emitting diode " Del " of power line " PL ".
For producing full-color image, in a pixel region, OELD device comprises red, green and blue subpixel area.Fig. 2 shows the schematic diagram of the pixel region of correlation technique OELD device.As shown in Figure 2, OELD device 10 comprises multiple pixel region " P ".Each pixel region " P " comprises red, green and blue subpixel area " SPr ", " SPg " and " SPb ".
Each pixel region " P " has rectangular shape, thus has horizontal length " H " and vertical length " V ".Red, green and blue subpixel area is disposed in each pixel region along horizontal direction or vertical direction.Such as, red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively have the horizontal length of 1/3 of the horizontal length " H " corresponding to pixel region " P " and the vertical length of the vertical length " V " corresponding to pixel region " P ".
Red, green and blue emission layer 32,34 and 36 is respectively formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb ".This red, green and blue emission layer 32,34 forms light-emitting diode " Del " with 36 together with the first and second electrode (not shown).When emission layer is closely arranged, shadow problem (shadowing problem) can be produced, that is, the blend of colors (color mixture) in adjacent subpixels region.Therefore, emission layer 32,34 and 36 respectively has width " w " (i.e. horizontal length), and height " h " (i.e. vertical length), and is spaced apart from each other by the first distance " d1 ".
Red, green and blue emission layer 32,34 and 36 is formed by using blocking mask (shadow mask) heat deposition.In fig. 2, red, green and blue emission layer 32,34 and 36 is laps of the first and second electrodes.
The region of red, green and blue emission layer 32,34 and 36 can large than in Fig. 2.But because the region corresponding to the red, green and blue emission layer 32,34 and 36 of the lap of the first and second electrodes is effective radiating portion, this red, green and blue emission layer 32,34 and 36 thus corresponding to these laps is illustrated.
OELD device 10 uses red, green and blue emission layer 32,34 and 36 full-color image shown in red, green and blue subpixel area " SPr ", " SPg " and " SPb ".
Recently, for meeting high-resolution demand, the area of the area of a pixel region " P " and each red, green and blue subpixel area " SPr ", " SPg " and " SPb " is also reduced.
As a result, the area for red, green and blue emission layer 32,34 and 36 is also reduced.The height " h " of each red, green and blue emission layer 32,34 and 36 corresponds essentially to the vertical height " h " of pixel region " P ", thus does not go wrong.But, because the width " w " of each red, green and blue emission layer 32,34 and 36 is corresponding to the horizontal length " H " of pixel region " P ", in reduction width " w ", there is restriction.
In other words, due to high-resolution demand, when the area of pixel region " P " is reduced, should be maintained in order to prevent the between the adjacent emissive layers of shadow problem first distance " d1 ".
Thus, with the high-resolution of OELD device, the area of red, green and blue emission layer 32,34 and 36 is promptly reduced, thus manufacture for the formation of red, green and blue emission layer 32,34 and 36 meticulous blocking mask be difficult.
Summary of the invention
Therefore, the present invention is intended to a kind of OELD device, and it substantially avoid the one or more problem that restriction and defect due to correlation technique cause.
The feature that the present invention adds and advantage are set forth in explanation subsequently, and part will by described explanation obviously, or be learned by practice of the present invention.These and other advantage of the present invention is realized by the structure that illustrates especially in specification and claim and shown accompanying drawing and obtains.
According to the present invention, as specialized with broadly described herein, a kind of organic elctroluminescent device comprises first to fourth pixel region, each pixel region comprises red, green and blue subpixel area, first to fourth pixel region is respectively divided into the first and second row, and this first row is divided into the first row and the second row, wherein red sub-pixels region and green subpixel area are arranged in the first row and the second row, and blue subpixel area is arranged in secondary series; Red emission layer is formed in red sub-pixels region; Green emission layer is formed in green subpixel area; And blue emission layer is formed in blue subpixel area.
Be appreciated that aforesaid general description and follow-up detailed description are all exemplary with indicative, and aim to provide the further explanation of invention as claimed in claim.
Accompanying drawing explanation
Comprise accompanying drawing to provide a further understanding of the present invention, accompanying drawing is combined and form the part of specification, describes embodiments of the present invention to explain principle of the present invention together with explanatory note.
Fig. 1 is the circuit diagram of a subpixel area of correlation technique OELD device.
Fig. 2 shows the schematic diagram of the pixel region of correlation technique OELD device.
Fig. 3 shows the schematic diagram of the pixel region of the OELD device according to first embodiment of the invention.
Fig. 4 is the circuit diagram of a pixel region of OELD device according to first embodiment of the invention.
Fig. 5 is the sectional view of the subpixel area of OELD device according to first embodiment of the invention.
Fig. 6 A shows the figure of the blocking mask of the red and green emission layer for the OELD device according to first embodiment of the invention.
Fig. 6 B shows the figure of the blocking mask of the blue emission layer for the OELD device according to first embodiment of the invention.
Fig. 7 A and 7B is the sectional view along VIIa-VIIa and the VIIb-VIIb line in Fig. 6 A respectively.
Fig. 8 shows the schematic diagram of the pixel region of the OELD device according to second embodiment of the invention.
Fig. 9 shows the figure of the blocking mask of the red and green emission layer for the OELD device according to second embodiment of the invention.
Figure 10 shows the schematic diagram of the pixel region of the OELD device according to third embodiment of the invention.
Figure 11 shows the figure of the blocking mask of the red and green emission layer for the OELD device according to third embodiment of the invention.
Figure 12 shows the schematic diagram of the pixel region of the OELD device according to four embodiment of the invention.
Figure 13 shows the figure of the blocking mask for the dark blue of the OELD device according to four embodiment of the invention and sky blue emission layer.
Figure 14 is the schematic diagram of the pixel region of OELD device according to fifth embodiment of the invention.
Figure 15 shows the figure for the blocking mask according to the red and green emission layer of the OELD device of fifth embodiment of the invention.
Embodiment
Now describe preferred implementation in detail below, its example illustrates in corresponding accompanying drawing.
Fig. 3 shows the schematic diagram of the pixel region of the OELD device according to first embodiment of the invention.
As shown in Figure 3, OELD device 10 comprise be arranged to matrix shape first to fourth pixel region " P1 ", " P2 ", " P3 " and " P4 ".First to fourth pixel region " P1 " to " P4 " respectively comprises red, green and blue subpixel area " SPr ", " SPg " and " SPb ".
First to fourth pixel region " P1 " to " P4 " respectively has rectangular shape to have horizontal length " H " and vertical length " V ".In the first row of each first to fourth pixel region " P1 " to " P4 ", arrange red and green subpixel area " SPr " and " SPg " alternating with each otherly, and arrange blue subpixel area " SPb " in the secondary series of each first to fourth pixel region " P1 " to " P4 ".
First to fourth pixel region " P1 " to " P4 " is respectively split into the first and second row along horizontal direction, and first row is vertically split into the first row and the second row." SPr " is arranged in first row and the first row in red subpixel areas, and green subpixel area " SPg " is arranged in first row and the second row.That is, vertically, red and green subpixel area " SPr " and " SPg " are arranged in adjacent pixel region alternating with each otherly.In other words, red and green subpixel area " SPr " and " SPg " be alternately arranged in first and the 3rd pixel region " P1 " and " P3 " first row in.In addition, red and green subpixel area " SPr " and " SPg " be alternately arranged in second and the 4th pixel region " P2 " and " P4 " first row in.As a result, in first row, green subpixel area " SPg " is positioned between two adjacent red sub-pixels regions " SPr ".Blue subpixel area " SPb " is arranged in secondary series.Red, green and blue emission layer 132,134 and 136 is respectively formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb ".
Red, green and blue emission layer 132,134 and 136 and (Fig. 5's) first electrode 130 and (Fig. 5's) second electrode 138 form (Fig. 5's) light-emitting diode " Del ".In order to prevent shadow problem, emission layer 132,134 and 136 is spaced apart with the first distance " d1 " each other.Such as the first distance " d1 " can be about 22 microns.
Red and green emission layer 132 and 134 respectively has the first width " w1 " (i.e. horizontal length) and first height " h1 " (i.e. vertical length).Blue emission layer 136 has the second width " w2 " and the second height " h2 ".That is, red, green and blue emission layer 132,134 and 136 is respectively rectangular shape.Red and green subpixel area " SPr " and " SPg " are arranged in the first row and second row of first row, and the first width " w1 " is greater than the first height " h1 ".On the contrary, blue subpixel area " SPb " is arranged in whole secondary series, and the second width " w2 " is less than the second height " h2 ".
Red, green and blue emission layer 132,134 and 136 is formed by using the heat deposition of blocking mask.In figure 3, red, green and blue emission layer 132,134 and 136 is laps of the first and second electrodes.
The area of red, green and blue emission layer 132,134 and 136 may large than in Fig. 3.But because the region corresponding to the red, green and blue emission layer 132,134 and 136 of the lap of the first and second electrodes 130 and 138 is effective radiating portion, this red, green and blue emission layer 132,134 and 136 corresponding to lap is illustrated.
Especially, when the first electrode 130 is exposed by (Fig. 5's) opening 128a of (Fig. 5's) bank (bank) 128, red, green and blue emission layer 132,134 contacts the part that the first electrode 130 exposes with 136, and the second electrode 138 is integrally formed on the surface of whole red, green and blue emission layer 132,134 and 136, the lap of the first and second electrodes 130 and 138 can be equal with the opening 128a of bank 128.
As mentioned above, according in the OELD device 10 of first embodiment of the invention, the first pixel region " P1 " is respectively split into the first and second row to " P4 ", and first row is split into the first row and the second row.Then, red and green subpixel area " SPr " and " SPg " are arranged in the region limited by first row and first and second row respectively, and blue subpixel area " SPb " is arranged in the region limited by secondary series.In addition, red, green and blue emission layer 132,134 and 136 is formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively.
Therefore, compared with correlation technique OELD device (wherein three subpixel area are arranged along a direction), in reduction subpixel area width, there is allowance (margin).As a result, for high-resolution demand, there is allowance.Namely, work as region, such as, when the width of red, green and blue subpixel area " SPr ", " SPg " and " SPb " reduces because of high-resolution demand, allowance is there is in the reduction of the width of red, green and blue subpixel area " SPr ", " SPg " and " SPb ", thus easily manufactured for the formation of the blocking mask of red, green and blue emission layer 132,134 and 136.
Fig. 4 is the circuit diagram of a pixel region of OELD device according to first embodiment of the invention, and Fig. 5 is the sectional view of the subpixel area of OELD device according to first embodiment of the invention.
As shown in Figure 4, OELD device 110 comprises the first and second select liness " GL1 " and " GL2 ", the first to the 3rd data wire " DL1 ", " DL2 " and " DL3 " and the first to the 3rd power line " PL1 ", " PL2 " and " PL3 ".The region surrounded by the first and second select liness " GL1 " and " GL2 ", the first data wire " DL1 " and the 3rd power line " PL3 " is defined as pixel region " P ".
Pixel region " P " is split into the first and second row, and first row is split into the first row and the second row.In the first row that red and green subpixel area " SPr " and " SPg " are defined to first row respectively and the second row, and blue subpixel area " SPb " is defined in secondary series.
Switching TFT " Ts ", drive TFT " Td ", holding capacitor " Cst " and light-emitting diode " Del " is formed in each red, green and blue subpixel area " SPr ", " SPg " and " SPb ".The position of switching TFT " Ts ", drive TFT " Td " and holding capacitor " Cst " is not limited in respective subpixel area.Such as, as the switching TFT " Ts " of the element of red sub-pixels region " SPr ", drive TFT " Td " and holding capacitor " Cst " can be arranged in green subpixel area " SPg " or blue subpixel area " SPb ".
In the diagram, the first power line " PL1 ", the second data wire " DL2 ", second source line " PL2 " and the 3rd data wire " DL3 " are positioned between the first data wire " DL1 " and the 3rd power line " PL3 " in turn.But, be not limited to data wire " DL1 " to " DL3 " and power line " PL1 " to " PL3 ".Such as the second data wire " DL2 " can be positioned at the position of second source line " PL2 ", and does not have second source line " PL2 ", and the drive TFT " Td " in green subpixel area " SPg " is connected to the first power line " PL1 ".That is, red and green subpixel area " SPr " and " SPg " share the first power line " PL1 ", and do not have second source line " PL2 ".
In the diagram, switching TFT " Ts " in red sub-pixels region " SPr ", drive TFT " Td ", holding capacitor " Cst " and light-emitting diode " Del " are driven by the signal from the first select lines " GL1 " and the first data wire " DL1 ", and drive TFT " Td ", holding capacitor " Cst " and the light-emitting diode " Del " in green subpixel area " SPg " is driven by the signal from the first select lines " GL1 " and the second data wire " DL2 ".Drive TFT " Td " in blue subpixel area " SPb ", holding capacitor " Cst " and light-emitting diode " Del " are driven by the signal from the first select lines " GL1 " and the 3rd data wire " DL3 ".
Comprise the drive TFT " Td " on the substrate 111 of glass or plastics, substrate 111 with reference to Fig. 5, OELD device 110 and be connected to the light-emitting diode " Del " of drive TFT " Td ".
Although do not illustrate, substrate 111 forms (Fig. 4's) select lines " GL1 " and " GL2 ", (Fig. 4's) data wire " DL1 " to " DL3 ", (Fig. 4's) power line " PL1 " to " PL3 " and switching TFT " Ts ".
In more detail, substrate 111 forms the semiconductor layer 112 including source region 112a, source region 112b and drain region 112c, and form whole substrate 111 surface of covering to cover the gate insulation layer 114 of semiconductor layer 112.
Semiconductor layer 112 is formed by semi-conducting material (such as amorphous silicon or polysilicon).Active region 112a is formed by intrinsic silicon, and source electrode and drain region 112b and 112c are respectively formed by the silicon of impurity.Gate insulation layer 114 can be formed by inorganic insulating material, such as, formed by silica or silicon nitride.
Grid 116 is formed on gate insulation layer 114, corresponding to semiconductor layer 112, and interlayer insulating film 118 be formed at substrate 111 whole surface on cover gate 116.Grid 116 can be formed by conductive metallic material (such as the alloy of aluminium (Al) or Al).Interlayer insulating film 118 can be formed by inorganic insulating material (such as by silica or silicon nitride), or is formed by organic insulating material (such as benzocyclobutene (benzocyclobutene) or acrylic resin).Interlayer insulating film 118 comprises the source region contact hole 120a exposing source area 112b and the drain region contact hole 120b exposing drain region 112c.
Source electrode 120, drain electrode 122 and data wire 124 are formed on interlayer insulating film 118.Source electrode 120 is connected to source area 112b by source region contact hole 120a, and drain electrode 122 is connected to drain region 112c by drain region contact hole 120b.
Semiconductor layer 112, grid 116, source electrode 120 and drain electrode 122 composition drive TFT " Td ".Although do not illustrate, switching TFT " Ts " can have the structure substantially identical with drive TFT " Td ".Select lines is by the material identical with grid 116 and formed in same layer.
To cover drive TFT " Td " on the whole surface that passivation layer 126 is formed at substrate 111.Passivation layer 126 can be formed by inorganic insulating material (such as silica or silicon nitride), or is formed by organic insulating material (such as benzocyclobutene or acrylic resin).Passivation layer 126 comprises the drain contact hole 126a exposing drain electrode 122.
First electrode 130 is formed on passivation layer 126, corresponding to pixel region " P ".First electrode 130 is connected to drain electrode 122 by drain contact hole 126a.
Bank 128 is formed at the edge of the first electrode 130.Bank 128 comprises the opening 128a exposing the first electrode 130.Bank 128 can be formed by inorganic insulating material (such as silica or silicon nitride), or is formed by organic insulating material (such as benzocyclobutene or acrylic resin).
On the first electrode 130 and in opening 128a, red, green and blue emission layer 132,134 and 136 is respectively formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb ".To cover red, green and blue emission layer 132,134 and 136 on the whole surface that second electrode 138 is formed in substrate 222.
First electrode 130, each emission layer 132,134 and 136, and the second electrode 138 forms light-emitting diode " Del ", and the first and second electrodes 130 and 138 are formed by the electric conducting material with different work functions (work function).
Electronics and hole be provided to each emission layer 132,134 with 136 the part contacted with the first electrode 130, thus this part of each emission layer 132,134 and 136 is luminous.Consider that the emission area of each red, green and blue emission layer 132,134 and 136 respectively in red, green and blue subpixel area " SPr ", " SPg " and " SPb " determines aperture ratio, thus important factor is the area of the first electrode 130 exposed by the opening 128a of bank 128.Therefore, figure 3 illustrates the red, green and blue emission layer 132,134 and 136 corresponding to the opening 128a of bank 128.
First and second electrodes 130 and 138 are used separately as anode and negative electrode.Have than another the higher work function in the first and second electrodes 130 and 138 as in the first and second electrodes 130 and 138 of anode.Such as, anode can be formed by tin indium oxide (ITO), and negative electrode can be formed by aluminium.
Each in emission layer 132,134 and 136 can comprise electron injecting layer (EIL), emitting material layer (EML) and hole injection layer (HIL) to improve emission effciency.Another substrate for encapsulating is fixed to substrate 111 thus obtains OELD110.
With reference to accompanying drawing 6A and 6B and Fig. 3, the blocking mask for the formation of red, green and blue emission layer 132,134 and 136 is described.Fig. 6 A shows the figure of the blocking mask of the red and green emission layer for the OELD device according to first embodiment of the invention, and Fig. 6 B shows the figure of the blocking mask of the blue emission layer for the OELD device according to first embodiment of the invention.
As shown in Figure 6A, the first blocking mask 160 is for the formation of red emission layer 132 and/or green emission layer 134, and it comprises multiple the first opening portion 162 and the first stop portions 164 for transmitting material.First stop portions 164 is surrounded the first opening portion 162 and is stopped emissive material.
Aligned position for the first blocking mask 160 of red emission layer 132 is different from the aligned position of the first blocking mask 160 for green emission layer 134.First blocking mask 160 vertically or horizontal direction move to form in red and green emission layer 132 and 134, afterwards formed in red and green emission layer 132 and 134 another.
At each pixel region " P1 " in " P4 ", each first opening portion 162 corresponds to red emission layer 132 or green emission layer 134.Each first opening portion 162 has the size substantially equaling the first width " w1 " and the first height " h1 ".Correspondingly, the first adjacent open area 162 along horizontal direction is spaced apart from each other with the first length " L1 ", " L1 " second width " w2 " corresponding to blue emission layer 136 and the summation (L1 ~ w2+2*d1) of the twice of the first distance " d1 ".In addition, the first vertically adjacent open area 162 is spaced apart from each other with the second length " L2 ", " L2 " first height " h1 " corresponding to red emission layer 132 or green emission layer 134 and the summation (L2 ~ h1+2*d1) of the twice of the first distance " d1 ".First length " L1 " can be less than the second length " L2 ".Alternatively, each first opening portion 162 has the size being greater than the first width " w1 " and the first height " h1 ".
On the other hand, as shown in Figure 6B, secondary shielding mask 170 is for the formation of blue emission layer 136, and it comprises multiple the second opening portion 172 and the second stop portions 174 for transmitting material.Second stop portions 174 is surrounded the second opening portion 172 and is stopped emissive material.
At each pixel region " P1 " in " P4 ", each second opening portion 172 corresponds to blue emission layer 136.Each second opening portion 172 has the size substantially equaling the second width " w2 " and the second height " h2 ".Correspondingly, the second adjacent open area 172 along horizontal direction is spaced apart from each other with the 3rd length " L3 ", " L3 " first width " w1 " corresponding to red emission layer 132 or green emission layer 134 and the summation (L3 ~ w1+2*d1) of the twice of the first distance " d1 ".In addition, the second vertically adjacent open area 172 is spaced apart from each other with the 4th length " L4 ", and " L4 " is corresponding to first distance " d1 " (L4 ~ d1).Alternatively, each second opening portion 172 has the size being greater than the second width " w2 " and the second height " h2 ".
Unfortunately, when the resolution of OELD device increases further, the length between the first adjacent opening portion 162 or between the second adjacent opening portion 172 or distance reduce, thus produce worried problem (twistedproblem).Particularly, when the first and second length " L1 " between the first opening portion 162 of the first blocking mask 160 and " L2 " reduce, the thickness of the first stop portions 164 reduces to some extent, thus this worried problem becomes serious.Come together this problem is described with reference to accompanying drawing 7A and 7B and Fig. 6 A.
Fig. 7 A and 7B is the sectional view of VIIa-VIIa and VIIb-VIIb line in Fig. 6 A respectively.As shown in figs. 7 a-b, when the metallic plate (not shown) formation by etching with the first thickness " t1 " comprises the first blocking mask 160 of the first opening portion 162 and the first stop portions 164, the first length " L1 " as the horizontal range between the first adjacent opening portion 162 can be greater than first length " L2 " of the vertical range as the first adjacent opening portion 162.In addition, first width " w1 " of the first opening portion 162 can be greater than the first height " h1 " of the first opening portion 162.Such as, the first length " L1 ", the second length " L2 ", the first width " w1 " and the first height " h1 " can be respectively about 38 microns, about 46.5 microns, about 49 microns and about 41.5 microns.
When the first opening portion 162 is formed, cone angle " θ " should be maintained at about 59 degree with obtain expect emission layer.Because the width of the first opening portion 162 and highly different, and horizontal range between the first adjacent opening portion 162 is different with vertical range, so the thickness of stop portions 164 is also different with vertical direction along horizontal direction.
That is, first width " w1 " of the first opening 162 is greater than the first height " h1 " of the first opening 162, thus metallic plate is more corresponding to horizontal direction etching.As a result, stop portions 164 has the second thickness " t2 " along horizontal direction and the 3rd thickness " t3 " vertically.Second thickness " t2 " is less than first thickness " t1 " of metallic plate, and the 3rd thickness " t3 " is greater than the second thickness " t2 ".Such as, second and the 3rd thickness " t2 " and " t3 " about 31.2 microns and about 38.2 microns can be respectively.
When the first blocking mask 160 is for the formation of emission layer, the first blocking mask 160 is fixed by framework.In order to the first blocking mask 160 is fixed to framework, the first blocking mask 160 can be stretched.
In order to prevent the first blocking mask 160 to be out of shape when the first blocking mask 160 is stretched, the first blocking mask 160 should have the thickness of about 40 microns.But the thickness of the first above-mentioned blocking mask 160 is less than 40 microns, when the first blocking mask 160 is stretched, distortion may be there is in the first blocking mask 160.In addition, the first blocking mask 160 has difference along the thickness of horizontal direction and vertical direction, thus exists and stretches difference, make the distortion of the first blocking mask 160 more serious.The distortion of the first blocking mask 160 causes the size difference of the first opening 162, thus has problems in emission layer 132 and 134.
In order to prevent the distortion of blocking mask, red and green subpixel area is arranged alternately.With reference to the setting of the following drawings pine torch pixel region.
Fig. 8 shows the schematic diagram of the pixel region of the OELD device according to second embodiment of the invention.As shown in Figure 8, OELD device 210 comprise be arranged as matrix shape first to fourth pixel region " P1 " to " P4 ".Each first to fourth pixel region " P1 " to " P4 " comprises red, green and blue subpixel area " SPr ", " SPg " and " SPb ".
Each first to fourth pixel region " P1 " to " P4 " has rectangular shape to have horizontal length " H " and vertical length " V ".Red and green subpixel area " SPr " and " SPg " are arranged in the first row of each first to fourth pixel region " P1 " to " P4 " alternating with each otherly, and blue subpixel area " SPb " is arranged in the secondary series of each first to fourth pixel region " P1 " to " P4 ".
Each first to fourth pixel region " P1 " is split into the first and second row to " P4 " along horizontal direction, and first row is vertically split into the first row and the second row.In the first row that red subpixel areas " SPr " and green subpixel area " SPg " are alternately arranged in first row and the second row.That is, red and green subpixel area " SPr " and " SPg " are arranged in vertically adjacent pixel region alternating with each otherly.In other words, red and green subpixel area " SPr " and " SPg " be alternately arranged in first and the 3rd pixel region " P1 " and " P3 " first row in.In addition, red and green subpixel area " SPr " and " SPg " be alternately arranged with each other in second and the 4th pixel region " P2 " and " P4 " first row in.As a result, in first row, green subpixel area " SPg " is positioned between two adjacent red sub-pixels regions " SPr ".
Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the middle first row of the 3rd pixel region " P3 " respectively and the second row, the 3rd pixel region " P3 " is vertically adjacent to the first pixel region " P1 ".
In addition, red and green subpixel area " SPr " and " SPg " are arranged in along in the adjacent pixel region of horizontal direction alternating with each otherly.Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the middle first row of the second pixel region " P2 " respectively and the second row, this second pixel region " P2 " along horizontal direction adjacent to the first pixel region " P1 ".
Utilize the layout of above-mentioned subpixel area, be positioned at distance increase that is between adjacent red sub-pixels region " SPr " and that be positioned between adjacent green subpixel area " SPg ", thus the manufacture of blocking mask becomes easy.
Blue subpixel area " SPb " is arranged in secondary series.Red, green and blue emission layer 232,234 and 236 is formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively.Red, green and blue emission layer 232,234 and 236 and the first electrode (not shown) and the second electrode (not shown) form light-emitting diode (not shown).In order to prevent shadow problem, emission layer 232,234 and 236 is spaced apart from each other first apart from " d1 ".Such as the first distance " d1 " can be about 22 microns.
Each red and green emission layer 232 and 234 all has the first width " w1 " (i.e. horizontal length) and first height " h1 " (i.e. vertical length).Blue emission layer 236 has the second width " w2 " and the second height " h2 ".That is, each red, green and blue emission layer 232,234 and 236 has rectangular shape.Red and green subpixel area " SPr " and " SPg " are arranged in the first row of each pixel region " P1 " to " P4 ", and the first width " w1 " is greater than the first height " h1 ".On the contrary, blue subpixel area " SPb " is arranged in whole secondary series, thus the second width " w2 " is less than the second height " h2 ".
Red, green and blue emission layer 232,234 and 236 is formed by using the heat deposition of blocking mask.In fig. 8, red, green and blue emission layer 232,234 and 236 is laps of the first and second electrodes.
As mentioned above, according in the OELD device 210 of second embodiment of the invention, the first and second row limit to " P4 " by splitting each first to fourth pixel region " P1 ", and the first row and second works, over-segmentation first row limits.Red and green subpixel area " SPr " and " SPg " are alternately arranged in first row.Red and green subpixel area " SPr " and " SPg " vertically arrange with horizontal direction alternating with each otherly.Red, green and blue emission layer 232,234 and 236 is formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively.
Therefore, compared with correlation technique OELD device (wherein three subpixel area are arranged along a direction), in reduction subpixel area width, there is allowance.As a result, for high-resolution demand, there is allowance.Namely, when the area (as width) of red, green and blue subpixel area " SPr ", " SPg " and " SPb " reduces because of high-resolution demand, allowance is there is in the reduction of the width of red, green and blue subpixel area " SPr ", " SPg " and " SPb ", thus easily manufactured for the formation of the blocking mask of red, green and blue emission layer 232,234 and 236.
In addition, be positioned at distance increase that is between adjacent red sub-pixels region " SPr " and that be positioned between adjacent green subpixel area " SPg ", the blocking mask for red and green subpixel area " SPr " and " SPg " is more easily manufactured.
Fig. 9 shows the figure of the blocking mask of the red and green emission layer for the OELD device according to second embodiment of the invention.For red and green emission layer blocking mask Fig. 8 with Fig. 9 together with illustrate.For the blocking mask of blue emission layer and identical in the first execution mode.
As shown in Figure 9, the blocking mask 260 for the formation of red and green subpixel area 232 and 234 comprises multiple opening portion 262 for transmitting material and stop portions 264.Aligned position for the blocking mask 260 of red emission layer 232 is different from the aligned position of the blocking mask 260 for green emission layer 234.After blocking mask 260 is vertically or horizontal direction moves to form in red and green emission layer 232 and 234, then another being formed in red and green emission layer 232 and 234.
At each pixel region " P1 " in " P4 ", each opening portion 262 corresponds to red emission layer 232 or green emission layer 234.Each opening portion 262 has the size substantially equaling the first width " w1 " and the first height " h1 ".Correspondingly, vertically adjacent open area 262 is spaced apart with the second length " L2 " each other, " L2 " first height " h1 " corresponding to red emission layer 232 or green emission layer 234 and the summation (L2 ~ h1+2*d1) of the twice of the first distance " d1 ".In addition, adjacent opening portion 262 is diagonally spaced apart with the 5th length " L5 " each other, and " L5 " calculates (L5 ~ ((w2+2*d1) by second width " w2 " of blue emission layer 236 and the summation of the twice of the first distance " d1 " and the first distance " d1 " 2+ d1 2) 1/2).Alternatively, each first opening portion 262 has the size being greater than the first width " w1 " and the first height " h1 ".
5th length " L5 " is greater than the first length " L1 ", and " L1 " is the horizontal range in the first embodiment between the first adjacent opening portion 162, and " L5 " relative first length " L1 " is more close to the second length " L2 ".
That is, the distance between adjacent opening portion 262 increases, and easily manufactures and has high-resolution blocking mask 260.In addition, because vertically and to the distance between the adjacent opening portion 262 of angular direction become close, thus the difference in thickness of the stop portions 264 of blocking mask 260 reduces, thus prevents the distortion of blocking mask 260.
Figure 10 shows the schematic diagram of the pixel region of the OELD device according to third embodiment of the invention.As shown in Figure 10, OELD device 310 comprise be arranged as matrix shape first to fourth pixel region " P1 " to " P4 ".Each first to fourth pixel region " P1 " to " P4 " comprises red, green and blue subpixel area " SPr ", " SPg " and " SPb ".
Each first to fourth pixel region " P1 " to " P4 " has rectangular shape to have horizontal length " H " and vertical length " V ".Red and green subpixel area " SPr " and " SPg " are arranged in the first row of each first to fourth pixel region " P1 " to " P4 " alternating with each otherly, and blue subpixel area " SPb " is arranged in the secondary series of each first to fourth pixel region " P1 " to " P4 ".
Each first to fourth pixel region " P1 " is split into the first and second row to " P4 " along horizontal direction, and first row is vertically split into the first row and the second row.In the first row that red sub-pixels region " SPr " and green subpixel area " SPg " are alternately arranged in first row and the second row.That is, red and green subpixel area " SPr " and " SPg " are arranged in vertically adjacent pixel region alternating with each otherly.In other words, red and green subpixel area " SPr " and " SPg " be alternately arranged in first and the 3rd pixel region " P1 " and " P3 " first row in.In addition, red and green subpixel area " SPr " and " SPg " be alternately arranged in second and the 4th pixel region " P2 " and " P4 " first row in.As a result, in first row, green subpixel area " SPg " is positioned between two adjacent red sub-pixels regions " SPr ".
At vertically arranged pixel region " P1 " with " P3 " or " P2 " and " P4 ", the subpixel area of same color is arranged as nearer than the subpixel area of different colours.Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the middle first row of the 3rd pixel region " P3 " respectively and the second row.In this case, each first and the 3rd distance in pixel region " P1 " and " P3 " between red and green subpixel area " SPr " and " SPg " is greater than the distance between the first pixel region " P1 " medium green subpixel area " SPg " and the second pixel region " P2 " medium green subpixel area " SPg ".
In addition, red and green subpixel area " SPr " and " SPg " are arranged in along in the adjacent pixel region of horizontal direction alternating with each otherly.Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the middle first row of the second pixel region " P2 " respectively and the second row, this second pixel region " P2 " along horizontal direction adjacent to the first pixel region " P1 ".
Similarly, in red and green subpixel area " SPr " and " SPg " the first row that is arranged in first row in the 4th pixel region " P4 " respectively and the second row.In this case, each second and the 4th distance in pixel region " P2 " and " P4 " between red and green subpixel area " SPr " and " SPg " is greater than the distance in the second pixel region " P2 " between red sub-pixels region " SPr " with the middle red sub-pixels region " SPr " of the 4th pixel region " P4 ".
The subpixel area of same color is closely arranged and is corresponded to an opening portion of blocking mask close to the subpixel area of arranging, thus the distance between the size of each opening portion of blocking mask and blocking mask opening portion increases.As a result, manufacture blocking mask becomes and is more prone to.
In addition, along horizontal direction, by alternately arranging red and green subpixel area " SPr " and " SPg ", the distance between adjacent red sub-pixels region " SPr " and adjacent green subpixel area " SPg " increases, thus manufacture blocking mask becomes easy.
Blue subpixel area " SPb " is arranged in secondary series.Red, green and blue emission layer 332,334 and 336 is formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively.Red, green and blue emission layer 332,334 and 336 and the first electrode (not shown) and the second electrode (not shown) form light-emitting diode (not shown).In order to prevent shadow problem, emission layer 332,334 and 336 is spaced apart from each other with the first distance " d1 ".
Owing to there is not shadow problem in same color emission layer, same color emission layer is spaced apart from each other with the second distance " d2 " being less than the first distance " d1 ".Such as, the first distance " d1 " can be about 22 microns, and second distance " d2 " can be about 13 microns.
Such as, in the first row that hot and green subpixel area " SPr " and " SPg " are arranged at the first row of the first pixel region " P1 " respectively and the second row, and green and red sub-pixels region " SPg " and " SPr " are when being arranged at respectively in the first row of the 3rd pixel region " P3 " first row and the second row, red and green emission layer 332 and 334 in first pixel region " P1 " and the green and red emission layer 334 and 332 in the 3rd pixel region " P3 " are spaced apart from each other with the first distance " d1 " respectively, and the green emission layer 334 in the first pixel region " P1 " and the green emission layer 334 in the 3rd pixel region " P3 " are spaced apart from each other with the second distance " d2 " being less than the first distance " d1 ".
Correspondingly, for identical pixel region size, in the 3rd execution mode, the size of each red and green emission layer 332 and 334 is greater than the size of each red and green emission layer 232 and 234 in the second execution mode.
That is, each red and green emission layer 332 and 334 has the first width " w1 " (it equals the first width " w1 " in the second execution mode) and third high degree " h3 " (it is greater than the first height " h1 " in the second execution mode).Blue emission layer 336 has the second width " w2 " and is greater than the second height " h2 " of the second width " w2 ".
In Fig. 10, the first width " w1 " is greater than third high degree " h3 ".Alternatively, when third high degree " h3 " increases further, third high degree " h3 " can be greater than the first width " w1 ".
Red, green and blue emission layer 332,334 and 336 is formed by using the heat deposition of blocking mask.In Fig. 10, red, green and blue emission layer 332,334 and 336 is laps of the first and second electrodes.
As mentioned above, in the OELD device 310 of the 3rd execution mode according to the present invention, the first and second row limit to " P4 " by splitting each first to fourth pixel region " P1 ", and the first row and second works, over-segmentation first row limits.Red and green subpixel area " SPr " and " SPg " are alternately arranged in first row.Red and green subpixel area " SPr " and " SPg " vertically arrange with horizontal direction alternating with each otherly.In the first row of vertically adjacent pixel region " P1 " and " P3 " or " P2 " and " P4 ", same color subpixel area is arranged as nearer than different colours subpixel area.Red, green and blue emission layer 332,334 and 336 is formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively.
Therefore, compared with correlation technique OELD device (wherein three subpixel area are arranged along a direction), in reduction subpixel area width, there is allowance.As a result, for high-resolution demand, there is allowance.Namely, when the area (as width and height) of red, green and blue subpixel area " SPr ", " SPg " and " SPb " reduces because of high-resolution demand, allowance is there is in the reduction of the area of red, green and blue subpixel area " SPr ", " SPg " and " SPb ", thus easily manufactured for the formation of the blocking mask of red, green and blue emission layer 332,334 and 336.
In addition, the subpixel area of same color is closely arranged and is corresponded to an opening portion of blocking mask close to the subpixel area of arranging, thus the distance between the size of each opening portion of blocking mask and blocking mask opening portion increases.In addition, by alternately arranging red and green subpixel area " SPr " and " SPg " along horizontal direction, the distance between adjacent red sub-pixels region " SPr " and adjacent green subpixel area " SPg " increases.As a result, the blocking mask for the manufacture of red and green emission layer 332 and 334 becomes easy.
According in the OELD device 310 of third embodiment of the invention, red and green emission layer 332 and 334 uses above-mentioned blocking mask to be formed.Figure 11 shows the figure of the blocking mask of the red and green emission layer for the OELD device according to third embodiment of the invention.For the blocking mask of blue emission layer and identical in the first and second execution modes.
With reference to Figure 11 together with Figure 10, the blocking mask 360 for the formation of red and green emission layer 332 and 334 comprises multiple opening portion 362 for transmitting material and stop portions 364.Aligned position for the blocking mask 360 of red emission layer 332 is different from the aligned position of the blocking mask 360 for green emission layer 334.Blocking mask 360 vertically or horizontal direction move to form in red and green emission layer 332 and 334, afterwards formed in red and green emission layer 332 and 334 another.
In vertically adjacent pixel region, each opening portion 362 corresponds to two adjacent red emission layers 332 or two adjacent green emission layers 334.Each opening portion 362 has the first width " w1 " and the 4th height " h4 ".4th height " h4 " equals the twice of the third high degree " h3 " of red emission layer 332 or green emission layer 334 and the summation (h4 ~ 2*h3+h2) of second distance " d2 ".Alternatively, the 4th height " h4 " can be greater than the summation of the spacing of the height of two the adjacent red emission layers 332 red emission layer 332 adjacent with two.
Opening portion 362 adjacent in blocking mask 360 is diagonally spaced apart from each other with the 5th length " L5 ", and " L5 " calculates (L5 ~ ((w2+2*d1) by second width " w2 " of blue emission layer 336 and the summation of the twice of the first distance " d1 " and the first distance " d1 " 2+ d1 2) 1/2).In addition, opening portion 362 adjacent in blocking mask 360 is vertically spaced apart from each other with the 6th length " L6 ", and " L6 " is corresponding to twice, the first distance twice of " d1 " and the summation (L6 ~ 2*h3+2*d1+d2) of second distance " d2 " of the third high degree " h3 " of red emission layer 332 or green emission layer 334.
4th height " h4 " of each opening portion 362 is greater than the first height " h1 " of each opening portion 162 and 262 in the first and second execution modes, and be greater than the second length " L2 " as the 6th length " L5 " of the diagonal distance between adjacent opening portion 362, " L2 " is the distance between opening portion 162 and 262 vertically adjacent in the first and second execution modes.
That is, the size of the Distance geometry opening portion 362 between adjacent opening portion 362 increases, and easily manufactures and has more high-resolution blocking mask 360.In addition, because vertically and to the distance between the adjacent opening portion 362 of angular direction become close, the difference in thickness of the stop portions 364 of blocking mask 360 reduces, thus the distortion of blocking mask 360 is prevented from.
Figure 12 shows the schematic diagram of the pixel region of the OELD device according to four embodiment of the invention.OELD device in Figure 12 comprises two blue subpixel area with the distance between the opening portion increasing blocking mask further.
As shown in figure 12, OELD device 410 comprise be arranged as matrix shape first to fourth pixel region " P1 " to " P4 ".Each first to fourth pixel region " P1 " to " P4 " comprises red, green and deep blue sub-pixel region territory " SPr ", " SPg " and " SPb1 " or red, green and sky blue subpixel area " SPr ", " SPg " and " SPb2 ".
Each first to fourth pixel region " P1 " to " P4 " has rectangular shape to have horizontal length " H " and vertical length " V ".Red and green subpixel area " SPr " and " SPg " are arranged in the first row of each first to fourth pixel region " P1 " to " P4 " alternating with each otherly.In vertically adjacent pixel region, same color subpixel area is closely arranged." SPb1 " is arranged in the secondary series of a pixel region in deep blue sub-pixel region territory, and sky blue subpixel area " SPb2 " is arranged in the secondary series in one other pixel region.Deep blue sub-pixel region territory " SPb1 " and sky blue subpixel area " SPb2 " are vertically arranged with horizontal direction alternating with each otherly.
Each first to fourth pixel region " P1 " is split into the first and second row to " P4 " along horizontal direction, and first row is vertically split into the first row and the second row.In the first row that red sub-pixels region " SPr " and green subpixel area " SPg " are alternately arranged in first row and the second row.That is, red and green subpixel area " SPr " and " SPg " are arranged in vertically adjacent pixel region alternating with each otherly.In other words, red and green subpixel area " SPr " and " SPg " be alternately arranged in first and the 3rd pixel region " P1 " and " P3 " first row in.In addition, red and green subpixel area " SPr " and " SPg " be arranged in alternating with each otherly second and the 4th pixel region " P2 " and " P4 " first row in.As a result, in first row, green subpixel area " SPg " is positioned between two adjacent red sub-pixels regions " SPr ".
At vertically arranged pixel region " P1 " with " P3 " or " P2 " and " P4 ", the subpixel area of same color is arranged as nearer than the subpixel area of different colours.Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the middle first row of the 3rd pixel region " P3 " respectively and the second row.In this case, each first and the 3rd distance in pixel region " P1 " and " P3 " between red and green subpixel area " SPr " and " SPg " is greater than the distance between the first pixel region " P1 " medium green subpixel area " SPg " and the second pixel region " P2 " medium green subpixel area " SPg ".
In addition, red and green subpixel area " SPr " and " SPg " are arranged in along in the adjacent pixel region of horizontal direction alternating with each otherly.Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the middle first row of the second pixel region " P2 " respectively and the second row, this second pixel region " P2 " along horizontal direction adjacent to the first pixel region " P1 ".
Similarly, in red and green subpixel area " SPr " and " SPg " the first row that is arranged in first row in the 4th pixel region " P4 " respectively and the second row.In this case, each second and the 4th distance in pixel region " P2 " and " P4 " between red and green subpixel area " SPr " and " SPg " is greater than the distance in the second pixel region " P2 " between red sub-pixels region " SPr " with the middle red sub-pixels region " SPr " of the 4th pixel region " P4 ".
The subpixel area of same color is closely arranged and is corresponded to an opening portion of blocking mask close to the subpixel area of arranging, thus the distance between the size of each opening portion of blocking mask and blocking mask opening portion increases.As a result, manufacture blocking mask becomes and is more prone to.
In addition, by alternately arranging red and green subpixel area " SPr " and " SPg " along horizontal direction, distance between adjacent red sub-pixels region " SPr " and adjacent green subpixel area " SPg " increases, thus manufacture blocking mask becomes easy.
Deep blue sub-pixel region territory " SPb1 ", sky blue subpixel area " SPb2 ", deep blue sub-pixel region territory " SPb1 " and sky blue subpixel area " SPb2 " are arranged in the secondary series of first to fourth pixel region " P1 " to " P4 " respectively.Because the dark blue emission layer 436 in deep blue sub-pixel region territory " SPb1 " and the sky blue emission layer 438 in sky blue subpixel area " SPb2 " are formed by different materials, so they can not be formed simultaneously.Blocking mask for dark blue and sky blue emission layer 436 and 438 is described as follows.
Red, green, dark blue and sky blue emission layer 432,434,436 and 438 is formed in red sub-pixels region " SPr ", green subpixel area " SPg ", deep blue sub-pixel region territory " SPb1 " and sky blue subpixel area " SPb2 " respectively.Red, green, dark blue and sky blue emission layer 432,434,436 and 438 and the first electrode (not shown) and the second electrode (not shown) form light-emitting diode (not shown).In order to prevent shadow problem, emission layer 432,434,436 and 438 is spaced apart with the first distance " d1 " each other.Because there is not shadow problem in the emission layer of same color, so the emission layer of same color is spaced apart from each other with the second distance " d2 " being less than the first distance " d1 ".
Such as, in the first row that hot and green subpixel area " SPr " and " SPg " are arranged at the first row of the first pixel region " P1 " respectively and the second row, and green and red sub-pixels region " SPg " and " SPr " are when being arranged at respectively in the first row of the first row of the 3rd pixel region " P3 " and the second row, red and green emission layer 432 and 434 in first pixel region " P1 " and the green and red emission layer 434 and 432 in the 3rd pixel region " P3 " are spaced apart from each other by the first distance " d1 " respectively, and the green emission layer 434 in the first pixel region " P1 " and the green emission layer 434 in the 3rd pixel region " P3 " are spaced apart from each other with the second distance " d2 " being less than the first distance " d1 ".
Correspondingly, for the pixel region of same size, the size of each red and green emission layer 432 and 434 in the 3rd execution mode is greater than the size of each red and green emission layer 232 and 234 in the second execution mode.
That is, each red and green emission layer 432 and 434 has the first width " w1 " (it equals the first width " w1 " in the second execution mode) and third high degree " h3 " (it is greater than the first height " h1 " in the second execution mode).Each dark blue emission layer 436 and sky blue emission layer 438 have the second width " w2 " and are greater than the second height " h2 " of the second width " w2 ".
In fig. 12, the first width " w1 " is greater than third high degree " h3 ".Alternatively, when third high degree " h3 " increases further, third high degree " h3 " may be greater than the first width " w1 ".
Red, green, dark blue and sky blue emission layer 432,434,436 and 438 is formed by using the heat deposition of blocking mask.In fig. 12, red, green, dark blue and sky blue emission layer 432,434,436 and 438 is laps of the first and second electrodes.
Dark blue emission layer 436 and sky blue emission layer 438 have the Pros and Cons depending on emissive material characteristic.Dark blue emission layer 436 has the advantage of color rendition aspect, and sky blue emission layer 438 has the advantage of life-span and emission effciency aspect.
In OELD device 410, dark blue and sky blue emission layer 436 and 438 is alternately arranged with each other the advantage obtaining dark blue and sky blue emission layer 436 and 438.
That is, when showing high color rendition image, the dark blue emission layer 436 except sky blue emission layer 438 is driven.In this case, the red and green emission layer 432 in the second pixel region " P2 " forms a unit picture element " P21 " with 434 together with the dark blue emission layer 436 in the first pixel region " P1 ".That is, the red and green subpixel area " SPr " in the first pixel region " P1 " and " SPg " share deep blue sub-pixel region territory " SPb1 " with the red and green subpixel area " SPr " in the second pixel region " P2 " and " SPg ".
On the other hand, when showing the normal image without the need to high color rendition, the sky blue emission layer 438 except dark blue emission layer 436 is driven.In this case, the red and green emission layer 432 in the second pixel region " P2 " forms a unit picture element " P22 " with 434 together with the sky blue emission layer 438 in the second pixel region " P2 ".That is, the red and green subpixel area " SPr " in the first pixel region " P1 " and " SPg " share sky blue subpixel area " SPb2 " with the red and green subpixel area " SPr " in the second pixel region " P2 " and " SPg ".
As mentioned above, dark blue emission layer 436 and sky blue emission layer 438 is optionally driven according to the image of display.In this case, by described method, the unit picture element as the unit for showing image is changed.
According in the OELD device 410 of four embodiment of the invention, limit the first and second row by splitting each first to fourth pixel region " P1 " to " P4 ", and limit the first row and the second row by segmentation first row.Red and green subpixel area " SPr " and " SPg " are alternately arranged in first row.Red and green subpixel area " SPr " and " SPg " vertically arrange with horizontal direction alternating with each otherly.In the first row of vertically adjacent pixel region " P1 " and " P3 " or " P2 " and " P4 ", same color subpixel area is arranged to nearer than different colours subpixel area.Deep blue sub-pixel region territory " SPb1 " and sky blue subpixel area " SPb2 " are arranged at the secondary series of a pixel region and the secondary series in one other pixel region respectively.Red, green, dark blue and sky blue emission layer 432,434,436 and 438 is formed in red, green, dark blue and sky blue subpixel area " SPr ", " SPg ", " SPb1 " and " SPb2 " respectively.
Correspondingly, compared with correlation technique OELD device (wherein three subpixel area are arranged along a direction), in reduction subpixel area width, there is allowance.As a result, for high-resolution demand, there is allowance.Namely, when the area (as width and height) of hot, green, dark blue and sky blue subpixel area " SPr ", " SPg ", " SPb1 " and " SPb2 " reduces because of high-resolution demand, in the reduction of the area of red, green, dark blue and sky blue subpixel area " SPr ", " SPg ", " SPb1 " and " SPb2 ", there is allowance, thus easily manufacture the blocking mask for the formation of red, green, dark blue and sky blue emission layer 432,434,436 and 438.
In addition, the subpixel area of same color is closely arranged and is corresponded to an opening portion of blocking mask close to the subpixel area of arranging, thus the distance between the size of each opening portion of blocking mask and blocking mask opening portion increases.In addition, by alternately arranging red and green subpixel area " SPr " and " SPg " along horizontal direction, the distance between adjacent red sub-pixels region " SPr " and adjacent green subpixel area " SPg " increases.As a result, manufacture the blocking mask being used for red and green emission layer 432 and 434 and become easy.
In addition, because the sky blue emission layer 438 in the dark blue emission layer 436 in deep blue sub-pixel region territory " SPb1 " and sky blue subpixel area " SPb2 " is formed by different technique, for the blocking mask of dark blue emission layer 436 and sky blue emission layer 438 opening portion between distance increase, thus manufacture the blocking mask being used for dark blue emission layer 436 and sky blue emission layer 438 and become easy.
With reference to Figure 13, the blocking mask for dark blue emission layer 436 and sky blue emission layer 438 is described.Figure 13 shows the figure of the blocking mask for dark blue and sky blue emission layer of the OELD device according to four embodiment of the invention.For the blocking mask of red and green emission layer and identical in the 3rd execution mode.
With reference to Figure 12 and Figure 13, the blocking mask 470 for the formation of dark blue emission layer 436 and sky blue emission layer 438 comprises multiple opening portion 472 for transmitting material and stop portions 474.Aligned position for the blocking mask 470 of dark blue emission layer 436 is different from the aligned position of the blocking mask 470 for sky blue emission layer 438.Blocking mask 470 vertically or horizontal direction move to form in dark blue and sky blue emission layer 436 and 438, form another in dark blue and sky blue emission layer 436 and 438 afterwards again.
Each opening portion 472 corresponds to dark blue emission layer 436 or the sky blue emission layer 438 of OELD device 410.Each opening portion 472 has the second width " w2 " and the second height " h2 ".That is, each opening portion 472 has and dark blue emission layer 436 or the substantially identical size of sky blue emission layer 438.Alternatively, each opening portion 472 has the size being greater than dark blue emission layer 436 or sky blue emission layer 438.
The adjacent opening portion 472 of blocking mask 470 is diagonally spaced apart from each other with the 7th length " L7 ".7th length " L7 " by the first width " w1 " and first distance " d1 " twice, and the first length " d1 " obtain, (L7 ~ (w1+2*d1) 2+ d1 2) 1/2).In addition, adjacent in blocking mask 470 opening portion 472 is vertically spaced apart from each other with the 8th length " L8 ".8th length " L8 " is corresponding to the summation (L8 ~ h2+2*d1) of the twice of the second height " h2 " of dark blue emission layer 436 or sky blue emission layer 438 and the twice of the first distance " h1 ".
That is, the distance between adjacent opening portion 472 increases, and has more high-resolution blocking mask 470 easily manufactured.In addition, because vertically and to the distance between the adjacent opening portion 472 of angular direction become close, the difference in thickness of the stop portions 474 of blocking mask 470 reduces, thus the distortion of blocking mask 470 is prevented from.
In order to easily manufacture blocking mask further, the distance between opening portion is increased further by the edge (edge) removing each opening.Figure 14 is the schematic diagram in the OELD device pixel region according to fifth embodiment of the invention.
As shown in figure 14, OELD device 510 comprise be arranged to matrix shape first to fourth pixel region " P1 " to " P4 ".Each first to fourth pixel region " P1 " to " P4 " comprises red, green and blue subpixel area " SPr ", " SPg " and " SPb ".
Each first to fourth pixel region " P1 " has rectangular shape to " P4 ", has horizontal length " H " and vertical length " V ".Red and green subpixel area " SPr " and " SPg " are arranged in the first row of each first to fourth pixel region " P1 " to " P4 " alternating with each otherly, and blue subpixel area " SPb " is arranged in the secondary series of each first to fourth pixel region " P1 " to " P4 ".
Each first to fourth pixel region " P1 " is split into the first and second row to " P4 " along horizontal direction, and first row is vertically split into the first row and the second row.In the first row that red sub-pixels region " SPr " and green subpixel area " SPg " are alternately arranged in first row and the second row.That is, red and green subpixel area " SPr " and " SPg " are arranged in vertically adjacent pixel region alternating with each otherly.In other words, red and green subpixel area " SPr " and " SPg " be alternately arranged in first and the 3rd pixel region " P1 " and " P3 " first row in.In addition, red and green subpixel area " SPr " and " SPg " be arranged in alternating with each otherly second and the 4th pixel region " P2 " and " P4 " first row in.As a result, in first row, green subpixel area " SPg " is positioned between two adjacent red sub-pixels regions " SPr ".
At vertically arranged pixel region " P1 " with " P3 " or " P2 " and " P4 ", the subpixel area of same color is arranged as nearer than the subpixel area of different colours.Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of the first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the first row in the 3rd pixel region " P3 " respectively and the second row.In this case, each first and the 3rd distance in pixel region " P1 " and " P3 " between red and green subpixel area " SPr " and " SPg " is greater than the distance between the first pixel region " P1 " medium green subpixel area " SPg " and the second pixel region " P2 " medium green subpixel area " SPg ".
In addition, red and green subpixel area " SPr " and " SPg " are arranged in along in the adjacent pixel region of horizontal direction alternating with each otherly.Such as, when hot and green subpixel area " SPr " and " SPg " are arranged in the first row of first row in the first pixel region " P1 " and the second row respectively, in the first row that green and red sub-pixels region " SPg " and " SPr " are arranged at the middle first row of the second pixel region " P2 " respectively and the second row, this second pixel region " P2 " along horizontal direction adjacent to the first pixel region " P1 ".
Similarly, in red and green subpixel area " SPr " and " SPg " the first row that is arranged in first row in the 4th pixel region " P4 " respectively and the second row.In this case, each second and the 4th distance in pixel region " P2 " and " P4 " between red and green subpixel area " SPr " and " SPg " is greater than the distance in the second pixel region " P2 " between red sub-pixels region " SPr " with the middle red sub-pixels region " SPr " of the 4th pixel region " P4 ".
The subpixel area of same color is closely arranged and is corresponded to an opening portion of blocking mask close to the subpixel area of arranging, thus the distance between the size of each opening portion of blocking mask and blocking mask opening portion increases.As a result, manufacture blocking mask becomes and is more prone to.
In addition, by alternately arranging red and green subpixel area " SPr " and " SPg " along horizontal direction, distance between adjacent red sub-pixels region " SPr " and adjacent green subpixel area " SPg " increases, thus manufacture blocking mask becomes easy.
Blue subpixel area " SPb " is arranged in secondary series.Red, green and blue emission layer 532,534 and 536 is formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively.Red, green and blue emission layer 532,534 and 536 and the first electrode (not shown) and the second electrode (not shown) form light-emitting diode (not shown).In order to prevent shadow problem, emission layer 532,534 and 536 is spaced apart from each other with the first distance " d1 ".
Because there is not shadow problem in same color emission layer, same color emission layer is spaced apart from each other by the second distance " d2 " being less than the first distance " d1 ".Such as, the first distance " d1 " can be about 22 microns.
Such as, in the first row that hot and green subpixel area " SPr " and " SPg " are arranged at the first pixel region " P1 " first row respectively and the second row, and green and red sub-pixels region " SPg " and " SPr " are when being arranged at respectively in the first row of the first row of the 3rd pixel region " P3 " and the second row, red and green emission layer 532 and 534 in first pixel region " P1 " and the green and red emission layer 534 and 532 in the 3rd pixel region " P3 " are spaced apart from each other by the first distance " d1 " respectively, and the green emission layer 534 in the first pixel region " P1 " and the green emission layer 534 in the 3rd pixel region " P3 " are spaced apart from each other with the second distance " d2 " being less than the first distance " d1 ".
Correspondingly, for identical pixel region size, the size of each red and green emission layer 532 and 534 in the 3rd execution mode is greater than the size of each red and green emission layer 232 and 234 in the second execution mode.
Two turnings of each red and green emission layer 532 and 534 are removed.In each pixel region, the first and second turnings of red emission layer 532 and green emission layer 534 respectively towards this first and second turning second and the 4th turning be removed.In other words, when the emission layer of the adjacent same color of two in two vertically adjacent pixel regions is defined as an emission layer group, four outer corner of an emission layer group are removed.
Such as, when green emission layer 534 is arranged in the first row of the first row in the second row neutralization the 3rd pixel region " P3 " of the first row in the first pixel region " P1 ", four the outside corners comprising the emission layer group of two green emission layers 534 are removed, as below two corners above of the second row medium green emission layer 534 of first row in the first pixel region " P1 " and the first row medium green emission layer 534 of the middle first row of the 3rd pixel region " P3 ", two corners are removed.
The part removed can be the isosceles triangle with the length of side " a ".The corner of removing emission layer means the exposed area changed by first electrode of (Fig. 5's) opening 128a of (Fig. 5's) bank 128.
Each red and green emission layer 532 and 534 all has rectangular shape, and it has the first width " w1 " and is greater than the first height third high degree " h3 " of " h1 " and its corner is removed.That is, each red and green emission layer 532 and 534 has the hex shape of change, and emission layer group has the octagonal shape of change.Blue emission layer 536 has the second width " w2 " and is greater than the second height " h2 " of the second width " w2 ".
In fig. 14, the first width " w1 " is greater than third high degree " h3 ".Alternatively, when third high degree " h3 " increases further, third high degree " h3 " can be greater than the first width " w1 ".
As mentioned above, according in the OELD device 510 of fifth embodiment of the invention, limit the first and second row by splitting each first to fourth pixel region " P1 " to " P4 ", and limit the first row and the second row by segmentation first row.Red and green subpixel area " SPr " and " SPg " are alternately arranged in first row.Red and green subpixel area " SPr " and " SPg " vertically arrange with horizontal direction alternating with each otherly.In the first row of vertically adjacent pixel region " P1 " and " P3 " or " P2 " and " P4 ", same color subpixel area is arranged as nearer than different colours subpixel area.Red, green and blue emission layer 532,534 and 536 is formed in red, green and blue subpixel area " SPr ", " SPg " and " SPb " respectively.
Therefore, compared with correlation technique OELD device (wherein three subpixel area are arranged along a direction), in reduction subpixel area width, there is allowance.As a result, for high-resolution demand, there is allowance.Namely, when the area (as width and height) of red, green and blue subpixel area " SPr ", " SPg " and " SPb " reduces because of high-resolution demand, allowance is there is in the reduction of the area of red, green and blue subpixel area " SPr ", " SPg " and " SPb ", thus easily manufactured for the formation of the blocking mask of red, green and blue emission layer 532,534 and 536.
In addition, the subpixel area of same color is closely arranged and is corresponded to an opening portion of blocking mask close to the subpixel area of arranging, thus the distance between the size of each opening portion of blocking mask and blocking mask opening portion increases.In addition, by alternately arranging red and green subpixel area " SPr " and " SPg " along horizontal direction, the distance between adjacent red sub-pixels region " SPr " and adjacent green subpixel area " SPg " increases.As a result, manufacture the blocking mask being used for red and green emission layer 532 and 534 and become easy.
In addition, two corners of each red and green emission layer 532 and 534 are removed, thus for the blocking mask of red and green emission layer 532 and 534 adjacent opening portion between distance increase.As a result, manufacture the blocking mask being used for red and green emission layer 532 and 534 and become easier.
According in the OELD device 510 of fifth embodiment of the invention, red and green emission layer 532 and 534 uses above-mentioned blocking mask to be formed.Figure 15 shows for scheming according to the blocking mask of the red and green emission layer of the OELD device of fifth embodiment of the invention.For the blocking mask of blue emission layer and identical in the first to the 3rd execution mode.
With reference to Figure 14 and Figure 15, the blocking mask 560 for the formation of red and green emission layer 532 and 534 comprises multiple opening portion 562 for transmitting material and stop portions 564.Aligned position for the blocking mask 560 of red emission layer 532 is different from the aligned position of the blocking mask 560 for green emission layer 534.After blocking mask 560 is vertically or horizontal direction moves to form in red and green emission layer 532 and 534, then another being formed in red and green emission layer 532 and 534.
In vertically adjacent pixel region, each opening portion 562 corresponds to two adjacent red emission layers 532 or two adjacent green emission layers 534.Each opening portion 562 has the first width " w1 " and the 4th height " h4 ".4th height " h4 " equals the twice of the third high degree " h3 " of red emission layer 532 or green emission layer 534 and the summation (h4 ~ 2*h3+d2) of second distance " d2 ".Alternatively, the 4th height " h4 " can be greater than the summation of the spacing of the height of two the adjacent red emission layers 532 red emission layer 532 adjacent with two.
Each opening portion 562 corresponds to an emission layer group.Namely each opening portion 562 corresponds to two adjacent red emission layers 532.Four corners of rectangular shape are removed, thus each opening portion 562 has the hex shape of change.Remove part can be the length of side " a " and isosceles triangle.Such as, " a " can be greater than about 3 microns.
Correspondingly, adjacent in blocking mask 560 opening portion 562 is diagonally spaced apart from each other with the 9th length " L9 ".9th length " L9 " is than (Figure 11's) the 5th (L9 ~ (((w2+2*d1) more than the twice of triangle height removed greatly of length " L5 " 2+ d1 2) 1/2+ 2*a/2 1/2).In addition, opening portion 562 adjacent in blocking mask 560 is vertically spaced apart from each other with the 6th length " L6 ", and " L6 " is corresponding to twice, the first distance twice of " d1 " and the summation (L6 ~ 2*h3+2*d1+d2) of second distance " d2 " of the third high degree " h3 " of red emission layer 532 or green emission layer 534.
4th height " h4 " of each opening portion 562 is greater than the first height " h1 " of each opening portion 162 and 262 in the first and second execution modes, and the 6th length " L6 " is greater than the second length " L2 ", " L6 " is the distance between vertically adjacent opening portion 562, and " L2 " is the distance between opening portion 162 and 262 vertically adjacent in the first and second execution modes.
In addition, the 9th length " L9 " is greater than the 5th length " L5 ", and " L9 " is the diagonal distance between adjacent opening portion 562, and " L5 " is the diagonal distance between opening portion 362 and 462 adjacent in the third and fourth execution mode.
Therefore, the size of the Distance geometry opening portion 562 between adjacent opening portion 562 increases, and has more high-resolution blocking mask 560 easily manufactured.In addition, because vertically and to the distance between the adjacent opening portion 562 of angular direction diminish, the difference in thickness of the stop portions 564 of blocking mask 560 reduces, thus the distortion of blocking mask 560 is prevented from.
As mentioned above, in OELD device according to the present invention, red and green subpixel area is alternately arranged in the first row of pixel region, and blue subpixel area is arranged in the secondary series of pixel region, thus there is advantage in aperture ratio and resolution.In addition, in vertically adjacent pixel region, the subpixel area of same color is closely arranged, thus the manufacture of blocking mask becomes easy.
Those skilled in the art clearly can make different changes and modification under the condition not departing from spirit of the present invention and category.Therefore, the present invention is intended to cover the change of the present invention and modification that provide, and it belongs among additional claim and their modification.
This application claims the priority of No. 10-2010-0088059th, the korean application that on September 8th, 2010 submits to, be incorporated herein by reference.

Claims (9)

1. an organic elctroluminescent device, described organic elctroluminescent device comprises:
First pixel region is to the 4th pixel region, described first pixel region respectively comprises red to the 4th pixel region, green and blue subpixel area, described first pixel region is respectively split into first row and secondary series to the 4th pixel region, and described first row is split into the first row and the second row, wherein, described first pixel region to described 4th pixel region is set to 2 × 2 matrix forms, one in wherein said red sub-pixels region and described green subpixel area to be arranged in the first row of described first pixel region and with described first pixel region flatly adjacent described second pixel region the second row in, and another in described red sub-pixels region and described green subpixel area is arranged in the second row of described first pixel region and in the described the first row of described second pixel region, and wherein blue subpixel area is arranged in described secondary series,
Be formed at the red emission layer in described red sub-pixels region;
Be formed at the green emission layer in described green subpixel area; And
Be formed at the blue emission layer in described blue subpixel area,
Wherein, described red emission layer and described green emission layer have the first shape, described first shape has the first vertical length and is greater than the first horizontal length of described first vertical length, and wherein said blue emission layer has the second shape, described second shape has the second horizontal length and is greater than the second vertical length of described second horizontal length, and
Wherein, described second horizontal length is less than described first horizontal length.
2. device according to claim 1, the blocking mask wherein for the formation of described red emission layer and described green emission layer comprises multiple stop portions corresponding to the opening portion of among described red emission layer and described green emission layer and surround the plurality of opening portion.
3. device according to claim 1, described another in wherein said red emission layer and green emission layer is arranged in vertically adjacent to the first row of described 3rd pixel region of described first pixel region, and distance between the adjacent red emission layer of in described first pixel region and described 3rd pixel region two or the first distance between two adjacent green emission layers are less than the second distance between green emission layer in described first pixel region or described 3rd pixel region and red emission layer.
4. device according to claim 3, wherein comprises for the formation of the blocking mask of described red emission layer and described green emission layer and multiplely corresponds to the opening portion of described two adjacent red emission layers or described two adjacent green emission layers and surround the stop portions of the plurality of opening portion.
5. device according to claim 3, wherein said two adjacent red emission layers or described two adjacent green emission layers form emission layer group, and four of described emission layer group outside corners are removed, thus described emission layer group has octagonal shape.
6. device according to claim 3, the 3rd distance between each and described blue emission layer wherein in red emission layer described in described first pixel region and described green emission layer is equal to described second distance.
7. device according to claim 1, wherein said blue subpixel area comprises deep blue sub-pixel region territory and sky blue subpixel area, and described blue emission layer comprises and is formed at dark blue emission layer in described dark blue emission layer and described sky blue emission layer and sky blue emission layer respectively, and wherein said deep blue sub-pixel region territory and described sky blue subpixel area are vertically arranged with horizontal direction alternating with each otherly.
8. device according to claim 7, wherein comprises for the formation of the blocking mask of described dark blue emission layer and described sky blue emission layer and multiplely corresponds to the opening portion of described dark blue emission layer or described sky blue emission layer and surround the stop portions of the plurality of opening portion.
9. device according to claim 1, described device also comprises:
The first electrode under each in described red emission layer, described green emission layer and described blue emission layer;
Be positioned at the bank at the edge of described first electrode, described bank comprises opening, and wherein said opening exposes a part for described first electrode; And
The second electrode on described red emission layer, described green emission layer and described blue emission layer,
In wherein said red emission layer, described green emission layer and described blue emission layer, each corresponds to the part that described first electrode exposes.
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