CN203774309U - Metal-oxide-metal (MOM) capacitor structure - Google Patents
Metal-oxide-metal (MOM) capacitor structure Download PDFInfo
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- CN203774309U CN203774309U CN201320804612.7U CN201320804612U CN203774309U CN 203774309 U CN203774309 U CN 203774309U CN 201320804612 U CN201320804612 U CN 201320804612U CN 203774309 U CN203774309 U CN 203774309U
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- 239000003990 capacitor Substances 0.000 title claims abstract description 41
- 239000002184 metal Substances 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 31
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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Abstract
The utility model provides a metal-oxide-metal (MOM) capacitor structure. The MOM capacitor structure comprises a plurality of capacitor units; and the capacitor units are of double-spiral capacitor structures. According to the MOM capacitor structure of the utility model, capacitors in the X direction exist, and at the same time, capacitors in the Y and Z directions are increased maximally, and therefore, the density of the capacitors can be increased, and a capacitance value can be increased.
Description
Technical field
The utility model relates to integrated circuit and manufactures field, particularly a kind of MOM capacitance structure.
Background technology
Along with the continuous progress of the manufacturing technology of semiconductor integrated circuit, performance of semiconductor device is also accompanied by device miniaturization and microminiaturized process when constantly lifting.Capacitance structure is the important composition unit of integrated circuit, and the capacitance structure in integrated circuit (IC) chip is varied, as: MOS (metal-oxide-semiconductor field Metal-oxide-semicondutor) field effect transistor electric capacity; PIP (polysilicon-insulator-polysilicon polycrystalline silicon-on-insulator-polysilicon) electric capacity, MIM (metal-insulator-metal metal-insulator-metal type) electric capacity during variable junction capacitance and back segment are interconnected and MOM (metal-oxide-metal metal-oxide-metal) electric capacity.
The most frequently used back segment interconnect capacitance structure has two kinds at present: MIM electric capacity and MOM electric capacity.MIM electric capacity and MOM electric capacity are present in back segment interconnection layer structure and do not take the area of device layer, and the linear character of electric capacity will be much better than the electric capacity of other types.Wherein, although MIM electric capacity is simple in structure, forming at least double layer of metal plate needs a lot of extra processing steps, thereby has increased the cost in a lot of manufactures.And MOM electric capacity mainly utilizes the integral capacitor forming between upper/lower layer metallic wire and same layer metal, the advantage of this kind of electric capacity is that it can be realized by existing interconnected manufacturing process, can complete MOM electric capacity and copper interconnect architecture simultaneously, and capacitance density is higher, can also realize larger capacitance by stacked multilayer MOM electric capacity, therefore have more extensive use in high-order manufacture.
As depicted in figs. 1 and 2, in prior art, MOM capacitance structure is comb finger-like electric capacity, for vertical stacking structure, formed by multiple metal level M1, M2, M3, M4, every one deck structure comprises pole plate 11 and the pole plate 12 of cross arrangement, and the pole plate 11 that different metal layer forms is electrically connected mutually by connector 131, the pole plate 12 that different metal layer forms is electrically connected mutually by connector 132.Wherein, pole plate 11 comprises that multiple finger-like bars 112 gather bar 111 with for what be connected multiple finger-like bars 112, same, and pole plate 12 comprises that multiple finger-like bars 122 gather bar 121 with for what be connected multiple finger-like bars 122.Finger-like bar 112 and 122 is interdigitated arranges, and for the pole plate of same layer metal formation, finger-like bar 112 and finger-like bar 122 that same layer is adjacent form a point of capacitance structure; For the pole plate forming for adjacent layer metal, adjacent layer and adjacent finger-like bar 112 and finger-like bar 122 form a point of capacitance structure, adjacent layer and adjacent gathering bar 111 or gather bar 121 form a point of capacitance structure, and total electric capacity equals the electric capacity sum of each point of electric capacity.
In existing technique because MOM electric capacity will complete with interconnect architecture simultaneously, so the thickness of the oxidation insulating layer of MOM electric capacity determined by the thickness of metal wire and the thickness of dielectric layers of interconnect architecture, cannot independently change.Therefore, more difficult raising and the adjustment that realizes MOM capacitance in traditional handicraft.But, along with the demand of chip performance to large electric capacity, how under limited area, obtain and there is large capacitance electric capacity and become a problem having a great attraction.
Utility model content
The purpose of this utility model is to increase the capacitance density of capacitance structure in unit are, increases capacitance.
In order to solve the problems of the technologies described above, the utility model provides a kind of MOM capacitance structure, comprises multiple capacitor cells, and described capacitor cell is double-screw type capacitance structure.
Optionally, each described capacitor cell comprise multilayer the first pole plate, multilayer the second pole plate and be formed at the first pole plate and the second pole plate between dielectric layer.
Optionally, between the first pole plate of same layer and the second pole plate, angle is to bear 10 degree to 10 degree, best, the two is arranged in parallel.
Optionally, all cross arrangements, are all electrically connected by metal plug between the first pole plate of adjacent layer and between the second pole plate of adjacent layer between the first pole plate of adjacent layer and between the second pole plate of adjacent layer; The first pole plate of adjacent capacitor unit and the second pole plate alternative arrangement.
Optionally, it is mutually stacking that the first pole plate of adjacent layer or the second pole plate are 90 degree, metal plug and the first pole plate and the second pole plate vertical arrangement.
Optionally, described the first pole plate and the second pole plate form respectively two spirals, and these two spirals are overlapping vertical extension of central axial direction around the first pole plate and the second pole plate mutually, forms a vertical double-helical structure.
Optionally, the first pole plate and the second pole plate form respectively two spirals, and these two spirals are the overlapping central axial direction horizontal-extending around the first pole plate and the second pole plate mutually, forms a double-helical structure of level.
Optionally, arrange side by side with the first pole plate and the second pole plate in layer metal level.
Compared with prior art, the MOM capacitance structure that the utility model provides is double-spiral structure, in X direction, in unit and between adjacent cells, all there is electric capacity, in the Y direction, in unit and between adjacent cells, increased electric capacity, in Z direction, in unit and between adjacent cells, increase electric capacity.This just makes the capacitance density in unit are increase, thereby has increased the capacitance of capacitor.
Brief description of the drawings
Fig. 1 is the vertical view of MOM capacitance structure in prior art;
Fig. 2 is the profile of MOM capacitance structure in prior art;
Fig. 3 is the stereogram of the MOM capacitance structure unit of the utility model embodiment mono-;
Fig. 4 is the vertical view of the MOM capacitance structure of the utility model embodiment mono-;
Fig. 5 is the stereogram of the MOM capacitance structure unit of the utility model embodiment bis-;
Fig. 6 is the vertical view of the MOM capacitance structure of the utility model embodiment bis-.
Embodiment
Below in conjunction with schematic diagram, the utility model is described in more detail, wherein represent preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
In addition, in explanation of the present utility model, for not fuzzy creative aspect of the present utility model, some details is saved, the details of saving is also within the scope of those skilled in the art's understanding.
It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of aid illustration the utility model embodiment lucidly.
[embodiment mono-]
Fig. 3 is the stereogram of the MOM capacitance structure of the present embodiment, and Fig. 4 is the vertical view of the MOM capacitance structure of the present embodiment.
As shown in Figure 3 and Figure 4, the MOM capacitance structure that the present embodiment provides comprises multiple capacitor cells 20, described each capacitor cell 20 is vertical double-screw type capacitance structure, not only there is electric capacity at directions X, Y-direction and Z direction have also increased electric capacity, this just makes the capacitance density in unit are increase, thereby has increased the capacitance of capacitor.
Specifically, described capacitor cell 20 comprise multilayer the first pole plate 21, multilayer the second pole plate 22 and be formed at the first pole plate 21 and the second pole plate 22 between dielectric layer (not shown); The first pole plate 21 of same layer and the second pole plate 22 angles are to bear 10 degree to 10 degree, and best angle is 0 degree, and the first pole plate 21 of same layer and the second pole plate 22 are arranged in parallel; All cross arrangements between the first pole plate 21 of adjacent layer and between the second pole plate 22 of adjacent layer, between the first pole plate 21 of adjacent layer and between the second pole plate 22 of adjacent layer, be all electrically connected by metal plug 23, the first pole plate 21 of adjacent capacitor cell 20 and the second pole plate 22 alternative arrangements, so just formed double-screw type capacitance structure.
In the present embodiment, comprise altogether six layer of first pole plate 21 and the second pole plate 22, as shown in Figure 3, be followed successively by from bottom to up ground floor pole plate M1, second layer pole plate M2, the 3rd layer of pole plate M3, the 4th layer of pole plate M4, layer 5 pole plate M5 and layer 6 pole plate M6, wherein, ground floor pole plate M1 comprises the first pole plate 21 of ground floor and the second pole plate 22 of ground floor, and by that analogy, second layer pole plate M2 comprises the first pole plate 21 of the second layer and the second pole plate 22 of the second layer.
Preferably, vertical arrangement between the first pole plate 21 of adjacent layer and between the second pole plate 22 of adjacent layer, for example, it is mutually stacking that the first pole plate 21 of ground floor pole plate M1 and the first pole plate 21 of second layer pole plate M2 are 90 degree, and it is mutually stacking that the second pole plate 22 of ground floor pole plate M1 and the second pole plate 22 of second layer pole plate M2 are also 90 degree.And, metal plug 23 and the first pole plate 21 and the second pole plate 22 vertical arrangements, the capacitance electrode as much as possible of arranging in guarantor unit space.Dielectric stack between the first pole plate 21 and the second pole plate 22 and the two-plate of adjacent two layers forms point electric capacity of Z direction.
In the present embodiment, as shown in Figure 3, for stacking pole plate as much as possible in minimum space, the first pole plate 21 and the second pole plate 22 form respectively two spirals, these two spirals mutually the overlapping rotation of the central axial direction around the first pole plate 21 and the second pole plate 22 and on, form a vertical double-helical structure, farthest additionally increased coupling capacitance in Z direction.
As shown in Figure 4, the MOM capacitance structure that the present embodiment provides comprises multiple capacitor cells 20, multiple capacitor cells 20 are equidistantly arranged, and the first pole plate 21 of same capacitor cell 20 interior same layers and the spacing of the second pole plate 22 equate with the spacing of adjacent capacitor cell.That is to say, every one deck pole plate comprises multiple the first pole plates 21 parallel to each other, arranged side by side, equally spaced and the second pole plate 22, and described the first pole plate 21 and described the second pole plate 22 are arranged alternately with each other, and in same metal level, the polarity of any two adjacent plates is contrary.Between described the first pole plate 21 and described the second pole plate 22, be filled with isolation dielectric layer.The first pole plate 21 and the second pole plate 22 metal live widths are as much as possible little, but should ensure within the scope of design rule, so just make, in same metal level, in unit are, to use minimum metallic area, and the metal polar plate that distributed as much as possible, to increase coupling capacitance quantity.On directions X, the medium between the first pole plate 21 and the second pole plate 22 and two-plate between unit or in unit forms point electric capacity of directions X jointly; In the Y direction, the medium between the first pole plate 21 and the second pole plate 22 and the two-plate between unit or in unit forms point electric capacity of Y-direction jointly.,, in same metal layer, all with it opposite polarity 4 pole plates are adjacent for any one pole plate, and form 4 coupling capacitances.
[embodiment bis-]
Fig. 5 is the stereogram of the MOM capacitance structure of the present embodiment, and Fig. 6 is the vertical view of the MOM capacitance structure of the present embodiment.
As shown in Figure 5 and Figure 6, the MOM capacitance structure that the present embodiment provides comprises multiple capacitor cells 30, described each capacitor cell 30 is horizontal double-screw type capacitance structure, not only there is electric capacity at directions X, Y-direction and Z direction have also increased electric capacity, this just makes the capacitance density in unit are increase, thereby has increased the capacitance of capacitor.
Specifically, described capacitor cell 30 comprise multilayer the first pole plate 31, multilayer the second pole plate 32 and be formed at the first pole plate 31 and the second pole plate 32 between dielectric layer (not shown), the first pole plate 31 of same layer and the second pole plate 32 angles are that negative 10 degree are to 10 degree, best angle is 0 degree, and the first pole plate 31 of same layer and the second pole plate 32 are arranged in parallel.All cross arrangements between the first pole plate 31 of adjacent layer and between the second pole plate 32 of adjacent layer, between the first pole plate 31 of adjacent layer and between the second pole plate 32 of adjacent layer, be all electrically connected by metal plug 33, the first pole plate 31 of adjacent capacitor cell 30 and the second pole plate 32 alternative arrangements, so just formed double-screw type capacitance structure.Capacitor cell 30 of the present utility model also can be at vertical direction repeatedly stacking, need to meet equally the first pole plate 31 and second pole plate 32 alternative arrangements of adjacent capacitor cell 30 when stacking.
In the present embodiment, comprise altogether two-layer the first pole plate 31 and the second pole plate 32, as shown in Figure 5, be followed successively by from bottom to up ground floor pole plate M1 ＇, second layer pole plate M2 ＇, wherein, ground floor pole plate M1 ＇ comprises the first pole plate 31 of multiple ground floors and the second pole plate 32 of multiple ground floors, and by that analogy, second layer pole plate M2 ＇ comprises the first pole plate 31 of multiple second layers and the second pole plate 32 of multiple second layers.
Preferably, vertical arrangement between the first pole plate 31 of adjacent layer and between the second pole plate 32 of adjacent layer, for example, it is mutually stacking that the first pole plate 31 of ground floor pole plate M1 ＇ and the first pole plate 31 of second layer pole plate M2 ＇ are 90 degree, and it is mutually stacking that the second pole plate 32 of ground floor pole plate M1 ＇ and the second pole plate 32 of second layer pole plate M2 ＇ are also 90 degree.And, metal plug 33 and the first pole plate 31 and the second pole plate 32 vertical arrangements, the capacitance electrode as much as possible of arranging in guarantor unit space.Dielectric stack between the first pole plate 31 and the second pole plate 32 and the two-plate of adjacent two layers forms point electric capacity of Z direction.
In the present embodiment, as shown in Figure 5, for stacking pole plate as much as possible in minimum space, the first pole plate 31 and the second pole plate 32 form respectively two spirals, these two spirals are the overlapping central axial direction horizontal-extending around the first pole plate 31 and the second pole plate 32 mutually, form a double-helical structure of level, farthest additionally increased coupling capacitance in Z direction.
As shown in Figure 6, the MOM capacitance structure that the present embodiment provides comprises multiple capacitor cells 30, multiple capacitor cells 30 are equidistantly arranged, and the first pole plate 31 of same capacitor cell 30 interior same layers and the spacing of the second pole plate 32 equate with the spacing of adjacent capacitor cell.That is to say, every one deck pole plate comprises multiple the first pole plates 31 parallel to each other, arranged side by side, equally spaced and the second pole plate 32, and described the first pole plate 31 and described the second pole plate 32 are arranged alternately with each other, and in same layer pole plate, the polarity of any two adjacent plates is contrary.Between described the first pole plate 31 and described the second pole plate 32, be filled with isolation dielectric layer.The first pole plate 31 and the second pole plate 32 metal live widths are as much as possible little, but should ensure within the scope of design rule, so just make, in same layer, in unit are, to use minimum metallic area, and the metal polar plate that distributed as much as possible, to increase coupling capacitance quantity.On directions X, the medium between the first pole plate 31 and the second pole plate 32 and two-plate forms point electric capacity of directions X jointly; In the Y direction, the medium between the first pole plate 31 and the second pole plate 32 and two-plate forms point electric capacity of Y-direction jointly.,, in same metal layer, all with it opposite polarity 4 pole plates are adjacent for any one pole plate, and form 4 coupling capacitances.
In sum, this double-spiral structure of the present utility model repeats to form MOM capacitance structure in horizontal or vertical direction, and it is exactly the electric capacity of capacitance structure that all points of electric capacity sums are added.Compared with referring to type MOM electric capacity with traditional comb, structure of the present utility model has increased the electric capacity of Y, Z direction to greatest extent, thereby has increased the density of electric capacity, has increased capacitance.
Obviously, those skilled in the art can carry out various changes and modification and not depart from spirit and scope of the present utility model the utility model.Like this, if these amendments of the present utility model and within modification belongs to the scope of the utility model claim and equivalent technologies thereof, the utility model is also intended to comprise these changes and modification interior.
Claims (10)
1. a MOM capacitance structure, comprises multiple capacitor cells, it is characterized in that, described capacitor cell is double-screw type capacitance structure.
2. MOM capacitance structure as claimed in claim 1, is characterized in that, described capacitor cell comprise multilayer the first pole plate, multilayer the second pole plate and be formed at the first pole plate and the second pole plate between dielectric layer.
3. MOM capacitance structure as claimed in claim 1, is characterized in that, the first pole plate of adjacent capacitor unit and the second pole plate alternative arrangement.
4. MOM capacitance structure as claimed in claim 3, is characterized in that, between the first pole plate of same layer and the second pole plate, angle is that negative 10 degree are to 10 degree.
5. MOM capacitance structure as claimed in claim 4, is characterized in that, the first pole plate and second pole plate of same layer are arranged in parallel.
6. MOM capacitance structure as claimed in claim 4, it is characterized in that, all cross arrangements, are all electrically connected by metal plug between the first pole plate of adjacent layer and between the second pole plate of adjacent layer between the first pole plate of adjacent layer and between the second pole plate of adjacent layer.
7. MOM capacitance structure as claimed in claim 6, is characterized in that, vertical arrangement between the first pole plate of adjacent layer and between the second pole plate of adjacent layer, and described metal plug and described the first pole plate and the second pole plate vertical arrangement.
8. MOM capacitance structure as claimed in claim 6, it is characterized in that, described the first pole plate and the second pole plate form respectively two spirals, and these two spirals are overlapping vertical extension of central axial direction around the first pole plate and the second pole plate mutually, forms a vertical double-helical structure.
9. MOM capacitance structure as claimed in claim 7, is characterized in that, the first pole plate and second pole plate of described multiple capacitor cells are arranged side by side.
10. MOM capacitance structure as claimed in claim 6, it is characterized in that, described the first pole plate and the second pole plate form respectively two spirals, and these two spirals are the overlapping central axial direction horizontal-extending around the first pole plate and the second pole plate mutually, forms a double-helical structure of level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320804612.7U CN203774309U (en) | 2013-12-09 | 2013-12-09 | Metal-oxide-metal (MOM) capacitor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320804612.7U CN203774309U (en) | 2013-12-09 | 2013-12-09 | Metal-oxide-metal (MOM) capacitor structure |
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| Publication Number | Publication Date |
|---|---|
| CN203774309U true CN203774309U (en) | 2014-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320804612.7U Expired - Lifetime CN203774309U (en) | 2013-12-09 | 2013-12-09 | Metal-oxide-metal (MOM) capacitor structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047172A (en) * | 2015-09-15 | 2015-11-11 | 京东方科技集团股份有限公司 | Shift register, gate driving circuit, display screen and driving method of display screen |
-
2013
- 2013-12-09 CN CN201320804612.7U patent/CN203774309U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047172A (en) * | 2015-09-15 | 2015-11-11 | 京东方科技集团股份有限公司 | Shift register, gate driving circuit, display screen and driving method of display screen |
| US10121431B2 (en) | 2015-09-15 | 2018-11-06 | Boe Technology Group Co., Ltd. | Shift register, gate driving circuit, display screen and method for driving the display screen |
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Granted publication date: 20140813 |
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| CX01 | Expiry of patent term |