CN203754848U - Seed crystal cavity for horizontal gallium arsenide single crystal growth and quartz boat including seed crystal cavity - Google Patents
Seed crystal cavity for horizontal gallium arsenide single crystal growth and quartz boat including seed crystal cavity Download PDFInfo
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- CN203754848U CN203754848U CN201320792221.8U CN201320792221U CN203754848U CN 203754848 U CN203754848 U CN 203754848U CN 201320792221 U CN201320792221 U CN 201320792221U CN 203754848 U CN203754848 U CN 203754848U
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- Prior art keywords
- seed crystal
- cavity
- gallium arsenide
- quartz boat
- head
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- 239000013078 crystal Substances 0.000 title claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 15
- 239000010453 quartz Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 abstract description 13
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000007499 fusion processing Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 241000201976 Polycarpon Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Abstract
The utility model discloses a seed crystal cavity for horizontal gallium arsenide single crystal growth and a quartz boat including the seed crystal cavity. The seed crystal cavity has a head part and a tail part, and is gradually widened from the head part to the tail part, so that a horizontal section of a cavity body of the seed crystal cavity takes on a trapezoid. The quartz boat further comprises a shouldering part, an equal diameter part and a boat tail part. In a growth process of horizontal gallium arsenide single crystal, the seed crystal cavity disclosed by the utility model can prolong a shouldering process, so as to effectively reduce a dislocation density of the head part of the single crystal and improve crystal quality.
Description
Technical field
The utility model relates to a kind of crystal growing apparatus, and particularly a kind of horizontal gallium arsenide single crystal growing is with seed crystal chamber and comprise the quartz boat in this seed crystal chamber.
Background technology
Horizontal gallium arsenide monocrystalline is low with its dislocation desity, Impurity Distribution is even and famous.Level of growth arsenide gallium monocrystal mainly uses Bridgman method (being called for short HB method), and in compound semiconductor field, application is very extensive.
HB method is put into quartz boat after first polycrystal being weighed, and adds a certain amount of doping agent (as Si, Cu, Zn etc.), then quartz boat is put into the silica tube of cylindricality, vacuumizes tube sealing, then puts into directed zone melting method growing single-crystal for horizontal single crystal growing furnace.As shown in Figure 1, the quartz boat that HB method is used forms following a few part: seed crystal cavity segment 1, shouldering part 2, equal-diameter part 3 and boat portion 4.There are rectangle, the shape such as square, semicircle in existing seed crystal chamber.About the fusion process of seed crystal, as shown in Figure 2: for the single crystal growing in square seed crystal chamber, 10mm is fallen in the seed crystal melting that length is 35mm, the interior growth of seed crystal cavity segment 1 10mm, then shouldering part 2 65mm that grows, thus complete shouldering.
Monocrystalline dislocation desity height is an important indicator of single crystal growing quality.The reason and the Si that in arsenide gallium monocrystal process of growth, introduce dislocation are roughly the same, but also have its singularity, and wherein the most outstanding feature is exactly by introduced stress dislocation, glue boat phenomenon can produce a large amount of dislocations as occurred.Therefore, and how can further effectively reduce monocrystalline head dislocation desity, become emphasis and the direction of industry research.
Utility model content
The purpose of this utility model is to provide a kind of horizontal gallium arsenide single crystal growing seed crystal chamber and comprises the quartz boat in this seed crystal chamber, and it can obviously reduce horizontal gallium arsenide monocrystalline head dislocation desity, improves crystal mass.
For achieving the above object, the utility model is taked following technical scheme:
Seed crystal chamber is used in a kind of horizontal gallium arsenide single crystal growing, has head and afterbody, and this head to this afterbody widens gradually, and makes the horizontal section of this seed crystal chamber cavity be trapezoidal.
Described head width is 15～25mm, and described tail width is 25～35mm, and this head to this tail length is 35mm, and described seed crystal chamber cavity depth is 8～12mm.
A kind of quartz boat, comprises described seed crystal chamber successively, and shouldering part, equal-diameter part, boat portion.
The beneficial effects of the utility model are: in the process of growth of horizontal gallium arsenide monocrystalline, use the utility model, can extend shouldering process, and then can effectively reduce monocrystalline head dislocation desity, improve crystal mass.
Brief description of the drawings
Fig. 1 is the structural representation of existing quartz boat.
Fig. 2 is the vertical view in existing square seed crystal chamber.
Fig. 3 is the vertical view in the trapezoidal seed crystal of the utility model chamber.
Fig. 4 is the side-view in the trapezoidal seed crystal of the utility model chamber.
Embodiment
To structure of the present utility model and the technique effect being wanted to reach be described by reference to the accompanying drawings with specific embodiment below, but selected embodiment is only for interpretation, is not in order to limit scope of the present utility model.
As shown in Figure 3, Figure 4, the utility model provides a kind of horizontal gallium arsenide single crystal growing to use seed crystal chamber, and the horizontal section of its cavity is trapezoidal, is communicated with the shouldering part of quartz boat.This seed crystal chamber has head 11 and afterbody 12, and this head 11 to the width of this afterbody 12 widens gradually, the corresponding trapezoidal seed crystal that uses same shape.The size in the utility model seed crystal chamber can be: the trapezoidal upper base of head 11 width 15～25mm(), width 25～35mm(is trapezoidal goes to the bottom for afterbody 12), head 11 is to the trapezoidal height of afterbody 12 length 35mm(), the trapezoidal thickness of cavity depth 8～12mm(in this seed crystal chamber).
According to said structure, the utility model also provides a kind of quartz boat, comprise successively above-mentioned trapezoidal seed crystal chamber and shouldering part 2, equal-diameter part 3, boat portion (not shown), for horizontal gallium arsenide single crystal growing, compared to existing conventional quartz boat, can obviously reduce horizontal gallium arsenide monocrystalline head dislocation desity.
In the fusion process of seed crystal, the seed crystal taking length as 35mm is example, the seed crystal in trapezoidal seed crystal chamber, melting is fallen after 10mm, because the shouldering part in trapezoidal seed crystal chamber and seed crystal chamber are entirety, i.e. melting how many seed crystals just increased how many shouldering distances, so shouldering length increases as 75mm.And the shouldering part in existing square seed crystal chamber is fixed, i.e. 65mm.The increase of shouldering distance contributes to get rid of head dislocation bulk density, and then reduces head dislocation.
In sum, in the process of growth of horizontal gallium arsenide monocrystalline, use the utility model, can extend shouldering process, and then can effectively reduce monocrystalline head dislocation desity, improve crystal mass.
It is pointed out that above-mentioned embodiment is only possible embodiment, proposes in order to be expressly understood principle of the present utility model.Can in the situation that not deviating from the utility model principle and scope, carry out many variations and amendment to above-mentioned embodiment of the present utility model.All such modifications and variation are all included in the scope of the utility model announcement, and are subject to the protection of claims.
Claims (3)
1. a seed crystal chamber is used in horizontal gallium arsenide single crystal growing, it is characterized in that, has head and afterbody, and this head to this afterbody widens gradually, and makes the horizontal section of this seed crystal chamber cavity be trapezoidal.
2. seed crystal according to claim 1 chamber, is characterized in that, described head width is 15～25mm, and described tail width is 25～35mm, and this head is 35mm to this tail length, and described seed crystal chamber cavity depth is 8～12mm.
3. a quartz boat, is characterized in that, comprises successively the seed crystal chamber described in claim 1 or 2, and shouldering part, equal-diameter part, boat portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320792221.8U CN203754848U (en) | 2013-12-04 | 2013-12-04 | Seed crystal cavity for horizontal gallium arsenide single crystal growth and quartz boat including seed crystal cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320792221.8U CN203754848U (en) | 2013-12-04 | 2013-12-04 | Seed crystal cavity for horizontal gallium arsenide single crystal growth and quartz boat including seed crystal cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203754848U true CN203754848U (en) | 2014-08-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320792221.8U Expired - Lifetime CN203754848U (en) | 2013-12-04 | 2013-12-04 | Seed crystal cavity for horizontal gallium arsenide single crystal growth and quartz boat including seed crystal cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203754848U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105369345A (en) * | 2015-12-03 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | Crucible and preparation method for preparing sapphire single crystals |
| CN106319630A (en) * | 2015-07-02 | 2017-01-11 | 广东先导先进材料股份有限公司 | Growing method of gallium arsenide monocrystalline |
| CN108531975A (en) * | 2018-06-29 | 2018-09-14 | 汉能新材料科技有限公司 | A kind of semiconductor synthesizer and synthetic method |
| CN108546986A (en) * | 2018-04-19 | 2018-09-18 | 中国科学院半导体研究所 | Seed crystal protective device and method for monocrystal growth |
-
2013
- 2013-12-04 CN CN201320792221.8U patent/CN203754848U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106319630A (en) * | 2015-07-02 | 2017-01-11 | 广东先导先进材料股份有限公司 | Growing method of gallium arsenide monocrystalline |
| CN105369345A (en) * | 2015-12-03 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | Crucible and preparation method for preparing sapphire single crystals |
| CN105369345B (en) * | 2015-12-03 | 2018-01-26 | 河南西格马晶体科技有限公司 | A kind of crucible and preparation method for being used to prepare sapphire monocrystal |
| CN108546986A (en) * | 2018-04-19 | 2018-09-18 | 中国科学院半导体研究所 | Seed crystal protective device and method for monocrystal growth |
| CN108546986B (en) * | 2018-04-19 | 2020-09-15 | 中国科学院半导体研究所 | Seed crystal protection device and single crystal growth method |
| CN108531975A (en) * | 2018-06-29 | 2018-09-14 | 汉能新材料科技有限公司 | A kind of semiconductor synthesizer and synthetic method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |