CN103668440A - Monocrystal silicon czochralski method heat shield adjustment process - Google Patents
Monocrystal silicon czochralski method heat shield adjustment process Download PDFInfo
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- CN103668440A CN103668440A CN201310689227.7A CN201310689227A CN103668440A CN 103668440 A CN103668440 A CN 103668440A CN 201310689227 A CN201310689227 A CN 201310689227A CN 103668440 A CN103668440 A CN 103668440A
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Abstract
The invention discloses a monocrystal silicon czochralski method heat shield adjustment process which comprises the following steps: S1, when material dissolution is completed and the temperature is stable, a heat shield descends, and at the time, the distance from the bottom end of the heat shield to the surface of a silicon liquor in a crucible is 10-30 mm; S2, the heat shield rises, at the time, the distance from the bottom end of the heat shield to the surface of the silicon liquor in the crucible is 130-200 mm, and when the temperature is stable, seed crystal starts to immerse into a melt; S3, after the seed crystal immerses into the melt, the heat shield descends, and at the time, the distance from the bottom end of the heat shield to the surface of the silicon liquor in the crucible is 10-30 mm. According to the monocrystal silicon czochralski method heat shield adjustment process, a heat shield suspension system is utilized to adjust the distance value (GAP value) from the bottom end of the heat shield to the surface of the silicon liquor so as to fulfill the purpose of restraining thermal shock; before the seed crystal immerses into the melt, the position of the heat shield is adjusted to weaken the temperature difference on and under the liquid surface so as to weaken thermal shock, restrain or reduce generation of new dislocation.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly a kind of technique that immerses heat shielding adjustment in melt process for seed crystal.
Background technology
Seed crystal immerses the process of melt, under common process after melt temperature is stable, the abundant preheating of seed crystal is contacted with melt, because the slip plane of <111>, <100> monocrystalline and the direction of growth have enough large angle, so dislocation or slip line eliminating crystal are realized to dislocation-free single crystal drawing than being easier to; The slip plane of <110> monocrystalline is parallel with the direction of growth, and dislocation is difficult for getting rid of by the necking down technique in seeding stage.
Summary of the invention
The object of the present invention is to provide a kind of silicon single crystal vertical pulling method heat shielding adjusting process that reduces the generation of dislocation in seed crystal immersion melt process.
For solving the problems of the technologies described above, silicon single crystal vertical pulling method heat shielding adjusting process of the present invention, comprises the steps:
The first step, when material complete and temperature-stable after heat shielding decline, now in heat shielding bottom and crucible, the distance on silicon liquid surface is 10 millimeters～30 millimeters;
Second step, heat shielding raises, and now in heat shielding bottom and crucible, the distance on silicon liquid surface is 130 millimeters～200 millimeters, starts the process that seed crystal immerses melt after temperature-stable;
The 3rd step, after seed crystal immersion melt process completes, heat shielding declines, and now in heat shielding bottom and crucible, the distance on silicon liquid surface is 10 millimeters～30 millimeters.
Silicon single crystal vertical pulling method heat shielding adjusting process of the present invention adjusts to reach to the distance value (GAP value) on the bottom of heat shielding and silicon liquid surface the object that suppresses thermal shocking by heat shielding suspension, before immersing melt, seed crystal adjusts the position of heat shielding, weaken the upper and lower temperature head of liquid level, thereby weaken thermal shocking, suppress or reduce the generation of new dislocation.
Embodiment
Silicon single crystal vertical pulling method heat shielding adjusting process of the present invention, material completes, and after temperature-stable, decline heat shielding is to seeding position, and now in heat shielding bottom and crucible, the distance on silicon liquid surface is 10 millimeters～30 millimeters, and adjusts crucible position to seeding position according to heat shielding position.After crucible adjustment completes, rising heat shielding, now in heat shielding bottom and crucible, the distance on silicon liquid surface is 130 millimeters～200 millimeters, starts the process that seed crystal immerses melt after temperature-stable.After temperature-stable, start after process that seed crystal immerses melt completes, heat shielding is fallen to be back to from the distance on silicon liquid surface in crucible be the position of 10 millimeters～30 millimeters, equilibrium temperature, for seeding is prepared.
Silicon single crystal vertical pulling method heat shielding adjusting process of the present invention adjusts to reach to the distance value (GAP value) on the bottom of heat shielding and silicon liquid surface the object that suppresses thermal shocking by heat shielding suspension, before immersing melt, seed crystal adjusts the position of heat shielding, weaken the upper and lower temperature head of liquid level, thereby weaken thermal shocking, suppress or reduce the generation of new dislocation.
Below the preferred embodiment of the invention is illustrated, but the invention is not limited to described embodiment, those of ordinary skill in the art also can make all modification being equal to or replacement under the prerequisite without prejudice to the invention spirit, and the modification that these are equal to or replacement are all included in the application's claim limited range.
Claims (1)
1. silicon single crystal vertical pulling method heat shielding adjusting process, is characterized in that, comprises the steps:
The first step, when material complete and temperature-stable after heat shielding decline, now in heat shielding bottom and crucible, the distance on silicon liquid surface is 10 millimeters～30 millimeters;
Second step, heat shielding raises, and now in heat shielding bottom and crucible, the distance on silicon liquid surface is 130 millimeters～200 millimeters, starts the process that seed crystal immerses melt after temperature-stable;
The 3rd step, after seed crystal immersion melt process completes, heat shielding declines, and now in heat shielding bottom and crucible, the distance on silicon liquid surface is 10 millimeters～30 millimeters.
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| CN201310689227.7A CN103668440B (en) | 2013-12-16 | 2013-12-16 | Monocrystal silicon czochralski method heat shield adjustment process |
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| CN201310689227.7A CN103668440B (en) | 2013-12-16 | 2013-12-16 | Monocrystal silicon czochralski method heat shield adjustment process |
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| CN103668440A true CN103668440A (en) | 2014-03-26 |
| CN103668440B CN103668440B (en) | 2017-10-03 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435729A (en) * | 2016-10-09 | 2017-02-22 | 英利能源（中国）有限公司 | Seeding and shoulder expanding device and technique for single crystal rods and single crystal furnace |
| CN106435714A (en) * | 2015-08-07 | 2017-02-22 | 特变电工新疆新能源股份有限公司 | Polycrystalline silicon solution liquid level distance positioning method |
| CN108754599A (en) * | 2018-05-31 | 2018-11-06 | 西安理工大学 | A kind of silicon monocrystal growth temprature control method based on finite element numerical simulation |
| CN110923810A (en) * | 2019-12-11 | 2020-03-27 | 包头美科硅能源有限公司 | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon |
| CN110965118A (en) * | 2019-12-25 | 2020-04-07 | 西安奕斯伟硅片技术有限公司 | Guide cylinder device and crystal pulling furnace |
| CN111139520A (en) * | 2018-11-05 | 2020-05-12 | 上海新昇半导体科技有限公司 | Seeding method by Czochralski method |
| CN113529163A (en) * | 2020-04-17 | 2021-10-22 | 隆基绿能科技股份有限公司 | Crystal pulling method |
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| CN101148777A (en) * | 2007-07-19 | 2008-03-26 | 任丙彦 | Method and device for growing gallium-mixing silicon monocrystal by czochralski method |
| CN101798704A (en) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | Process for growing phi 8'' solar-grade Czochralski silicon by using 18-inch thermal field |
| CN102181925A (en) * | 2011-04-13 | 2011-09-14 | 任丙彦 | Growth process and device for growing IC-level silicon single crystal with low Fe content by czochralski method |
| CN102560625A (en) * | 2012-03-23 | 2012-07-11 | 内蒙古中环光伏材料有限公司 | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal |
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| JP2000034192A (en) * | 1998-07-17 | 2000-02-02 | Mitsubishi Materials Silicon Corp | Silicon single crystal-pulling machine |
| CN101148777A (en) * | 2007-07-19 | 2008-03-26 | 任丙彦 | Method and device for growing gallium-mixing silicon monocrystal by czochralski method |
| CN101798704A (en) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | Process for growing phi 8'' solar-grade Czochralski silicon by using 18-inch thermal field |
| CN102181925A (en) * | 2011-04-13 | 2011-09-14 | 任丙彦 | Growth process and device for growing IC-level silicon single crystal with low Fe content by czochralski method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435714A (en) * | 2015-08-07 | 2017-02-22 | 特变电工新疆新能源股份有限公司 | Polycrystalline silicon solution liquid level distance positioning method |
| CN106435729A (en) * | 2016-10-09 | 2017-02-22 | 英利能源（中国）有限公司 | Seeding and shoulder expanding device and technique for single crystal rods and single crystal furnace |
| CN108754599A (en) * | 2018-05-31 | 2018-11-06 | 西安理工大学 | A kind of silicon monocrystal growth temprature control method based on finite element numerical simulation |
| CN111139520A (en) * | 2018-11-05 | 2020-05-12 | 上海新昇半导体科技有限公司 | Seeding method by Czochralski method |
| CN110923810A (en) * | 2019-12-11 | 2020-03-27 | 包头美科硅能源有限公司 | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon |
| CN110965118A (en) * | 2019-12-25 | 2020-04-07 | 西安奕斯伟硅片技术有限公司 | Guide cylinder device and crystal pulling furnace |
| CN110965118B (en) * | 2019-12-25 | 2022-04-15 | 西安奕斯伟材料科技有限公司 | Guide cylinder device and crystal pulling furnace |
| CN113529163A (en) * | 2020-04-17 | 2021-10-22 | 隆基绿能科技股份有限公司 | Crystal pulling method |
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| Publication number | Publication date |
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| CN103668440B (en) | 2017-10-03 |
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Effective date of registration: 20191216 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Patentee before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |
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