CN204849124U - Jumbo size sapphire single crystal more than 80kg - Google Patents
Jumbo size sapphire single crystal more than 80kg Download PDFInfo
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- CN204849124U CN204849124U CN201520408675.XU CN201520408675U CN204849124U CN 204849124 U CN204849124 U CN 204849124U CN 201520408675 U CN201520408675 U CN 201520408675U CN 204849124 U CN204849124 U CN 204849124U
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Abstract
The utility model provides a jumbo size sapphire single crystal more than 80kg. Its from the top is drawn by crescent seeding part, shouldering part, the constant diameter subtotal final phase of a project of radius and takes off some four bibliographic categories and divide and forms, and the seeding part be perpendicular symmetrical W type, and the shouldering part be the crescent umbrella -type of 1.0-1.5kg radius, the constant diameter part be the radius and bottom the shouldering is partial the radius the same cylindrical, finish up to draw and take off the partial crescent taper shape of radius that is, the radius is lighter than the crucible radius. The utility model discloses the primal problem that faces to jumbo size sapphire growth of single crystal on the basis of original SAPMAC method sapphire growth of single crystal technology, combines to put forward daraf technology advantage, carries out redesign, forms one kind and can solve jumbo size sapphire single crystal and easily glue the jumbo size sapphire single crystal more than 80kg that crucible, bottom easily produced polycrystal, the many scheduling problems of internal defect.
Description
(1) technical field
The utility model relates to a kind of growth technique of more than 80kg large-size sapphire single-crystal, is specifically related to a kind of large-size sapphire single-crystal growth technique in conjunction with crystal pulling method and kyropoulos advantage.
(2) background technology
Sapphire single-crystal has excellent optics, machinery, chemistry and electrical property, can work under the mal-condition close to 2000 DEG C of high temperature, be widely used as the window material of various optical element, infrared military installation, space vehicle and high intensity laser beam device, and become the preferred material of current LED semiconducter substrate.
Along with the exploitation to sapphire application market, the continuous expansion especially (as Mobile phone screen, showing mirror etc.) in commercial market, also increase the demand of sapphire single-crystal, many industry relevant enterprises are expanded production for this reason all one after another thereupon.In the face of further fierce market competition, crystal mass not only will improve in crystal growth enterprise, and meanwhile, what is more important increases the size of sapphire crystal ingot, to meet the demand of more large-size sapphire product.
But, more problem can be faced during growing large-size sapphire single-crystal: as large-size sapphire single-crystal more easily causes crystal cleavage because gluing the problems such as crucible, bottom polycrystalline, crystal stress are large.In addition, the requirement of large-size crystals growth to thermal field design and technique is stricter, the appropriate design of thermal field is the basis of growing high quality large-size sapphire single-crystal, but, due to the feature of kyropoulos itself, the formulation of technique is also particularly important, otherwise crystal easily produces the defect such as bubble, cloud and mist, reduces volume recovery.Therefore, growing large-size sapphire single-crystal must formulate a set of rational growth technique.
In numerous growth methods of sapphire single-crystal, kyropoulos (KY) is substantially identical with crystal pulling method (CZ) principle, and main difference part is, crystal head is only pulled out during tradition KY method growth, crystal block section controls crystal growth by temperature variation, and crystal is in melt encirclement all the time, and stress is less.And CZ method upwards lifts with certain speed in process of growth always, crystal is crystallization on liquid level, is in cold-zone, and crystalline growth velocity is very fast.In addition, CZ method rotates at the simultaneous of lift, it is advantageous that crystal is heated evenly, and profile is level and smooth, and not easily sticky crucible, pulls Automated condtrol.But because the crystal block section grown is in rotating state always, the natural liquid stream superposition of rotating under the forced convection and gravity field caused can form complicated liquid stream, easily introduces defect.
Cold core float die (SAPMAC) comes from CZ method, but along with micropulling in process of growth, both can ensure the growth interface dimpling of crystal, pull rate can be avoided again too fast and the melt disturbance that causes, is conducive to reducing lattice defect.But for produced problem in large-size sapphire single-crystal process of growth, the advantage of crystal pulling method can be used for reference further, learn from other's strong points to offset one's weaknesses, to grow high-quality sapphire single-crystal.
(3) utility model content
The utility model grows the subject matter faced for large-size sapphire single-crystal, on the basis of original SAPMAC method Sapphire Crystal Growth technique, in conjunction with crystal pulling method process advantage, redesign, form a kind of more than 80kg large-size sapphire single-crystal that can solve the problems such as large-size sapphire single-crystal easily glues crucible, bottom easily produces polycrystalline, subsurface defect is many.
The purpose of this utility model is achieved in that seeding part 1, shouldering part 2, equal-diameter part 3 and ending that it is increased gradually by radius from top to down pull part 4 four part and form, seeding part 1 is vertical summetry W type, shouldering part is the umbrella shape that 1.0 ~ 1.5kg radius increases gradually, equal-diameter part 3 is cylindrical identical with shouldering section bottom radius of radius, ending pulls the taper shape that part 4 increases gradually for radius, and radius is less than crucible 5 radius.
The utility model also has some features like this:
1, described shouldering part is provided with and turns shoulder unit, and turning shoulder unit is umbrella shape lower part, and cross section is rounded.
The beneficial effects of the utility model have:
1. in the utility model, shouldering part is that the speed of growth slowing down crystal obtains, and the gas that interface is assembled has time enough effusion bath surface, reduces the probability of crystals trapped air bubbles.
2. be heated evenly around of the present utility model turn of shoulder unit, reduce the probability that crystal glues crucible, reduce crystal internal stress.
3. when of the present utility model turn of shoulder unit is formed, pull rate should be increased, reduce sidewall of the furnace body heat exchanger heat-sinking capability, shouldering angle is reduced, ensure crystal growth interface dimpling state, the probability of matter crystal internal defect can be reduced, crystal shoulder and isometrical intermediate location also can be avoided to produce larger stress.
4. in equal-diameter part growth phase of the present utility model, suitably accelerate cooling rate, reduce pull rate and be conducive to shortening technique duration, reduce costs, the problem causing crucible because pull rate is fast can be avoided simultaneously.
5. ending of the present utility model pulls some growth process implementation and pulls automatization, avoids easy generation polycrystalline and crystal bottom large-size sapphire single-crystal and easily falls the problem of crucible, reduce the probability of monocrystalline cracking.
(4) accompanying drawing explanation
Fig. 1 is the utility model structural representation.
(5) embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail.
Composition graphs 1, the present embodiment is divided into four parts, the seeding part 1 that it is increased gradually by radius from top to down, shouldering part 2, equal-diameter part 3 and ending pull part 4 four part and form, seeding part 1 is vertical summetry W type, shouldering part is the umbrella shape that 1.0 ~ 1.5kg radius increases gradually, equal-diameter part 3 is cylindrical identical with shouldering section bottom radius of radius, and ending pulls the taper shape that part 4 increases gradually for radius, and radius is less than crucible 5 radius.The control stage of the present embodiment four part respectively corresponding growth technique: seeding stage I, shouldering stage II(be subdivided into the shouldering initial stage with turn take on correction of the flank shape), isometrical stage III and ending pull stage IV, finally carry out cooling and anneal.
Claims (1)
1. more than a 80kg large-size sapphire single-crystal, it is characterized in that seeding part, shouldering part, equal-diameter part and ending that it is increased gradually by radius from top to down pull part four part and form, seeding part is vertical summetry W type, shouldering part is the umbrella shape that 1.0 ~ 1.5kg radius increases gradually, equal-diameter part is cylindrical identical with shouldering section bottom radius of radius, ending pulls the taper shape that part increases gradually for radius, and radius is less than crucible radius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520408675.XU CN204849124U (en) | 2015-06-15 | 2015-06-15 | Jumbo size sapphire single crystal more than 80kg |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520408675.XU CN204849124U (en) | 2015-06-15 | 2015-06-15 | Jumbo size sapphire single crystal more than 80kg |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204849124U true CN204849124U (en) | 2015-12-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520408675.XU Active CN204849124U (en) | 2015-06-15 | 2015-06-15 | Jumbo size sapphire single crystal more than 80kg |
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| CN (1) | CN204849124U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107653489A (en) * | 2017-09-15 | 2018-02-02 | 福建晶安光电有限公司 | A kind of growing method of crystal |
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2015
- 2015-06-15 CN CN201520408675.XU patent/CN204849124U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107653489A (en) * | 2017-09-15 | 2018-02-02 | 福建晶安光电有限公司 | A kind of growing method of crystal |
| CN107653489B (en) * | 2017-09-15 | 2020-06-09 | 福建晶安光电有限公司 | Crystal growth method |
| US11486054B2 (en) | 2017-09-15 | 2022-11-01 | Fujian Jing'an Optoelectronics Co., Ltd. | Method for growing crystal boule |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Growing method for large-size sapphire single crystal with weight of no less than 80kg Effective date of registration: 20180929 Granted publication date: 20151209 Pledgee: Longjiang bank Limited by Share Ltd Harbin Development Zone sub branch Pledgor: HARBIN AURORA OPTOELECTRONICS TECHNOLOGY CO., LTD. Registration number: 2018990000856 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20200509 Granted publication date: 20151209 Pledgee: Longjiang bank Limited by Share Ltd Harbin Development Zone sub branch Pledgor: HARBIN AURORA OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2018990000856 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |