CN203746912U - High-performance semiconductor thermoelectric element - Google Patents
High-performance semiconductor thermoelectric element Download PDFInfo
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- CN203746912U CN203746912U CN201420107635.7U CN201420107635U CN203746912U CN 203746912 U CN203746912 U CN 203746912U CN 201420107635 U CN201420107635 U CN 201420107635U CN 203746912 U CN203746912 U CN 203746912U
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Abstract
The utility model provides a high-performance semiconductor thermoelectric element. The high-performance semiconductor thermoelectric element comprises a P-type semiconductor thermoelectric arm, an N-type semiconductor thermoelectric arm, a copper sheet, insulation ceramic plates and a lead. The portion between an upper insulation ceramic plate and a lower insulation ceramic plate is filled with a thermal insulation sealing material; and the thermal insulation sealing material fills up gaps among the P-type semiconductor thermoelectric arm, the N-type semiconductor thermoelectric arm, the copper sheet and the two insulation ceramic plates. According to the utility model, the high-performance semiconductor thermoelectric element reserves the advantages of a conventional thermoelectric element, including simple structure, working medium elimination, small noise and rapid starting. Through filling the thermal insulation sealing material inside the semiconductor thermoelectric element, the thermoelectric conversion efficiency of the element is improved, the problem of low efficiency of the conventional semiconductor thermoelectric element is overcome, the actual application potential of the semiconductor thermoelectric element can be greatly improved, and the high-performance semiconductor thermoelectric element also has the advantages of high thermoelectric conversion efficiency, reliable sealing and high structural strength.
Description
Technical field
The utility model relates to a kind of high-performance semiconductor thermoelectric element, belongs to the direct-type technical field of thermoelectric conversion of using energy source.
Background technology
As shown in Figure 1, existing semiconductor heat electric device is mainly comprised of P type semiconductor thermoelectric arm, N type semiconductor thermoelectric arm, copper sheet, insulated ceramic plates, side organosilicon sealant (not shown in FIG.) and wire.
The operation principle of existing semiconductor heat electric device is: when the one side of thermoelectric element is subject to thermosetting hot junction, two ends that semiconductor contacts with copper sheet produce temperature difference.Because semiconductor has significant Seebeck effect, two ends that semiconductor contacts with copper sheet produce voltage.If load is accessed to wire, form closed circuit with thermoelectric element, in circuit, will form electric current, thereby the heat energy that thermoelectric element absorbs hot junction is directly changed into electric energy.
Semiconductor heat electric device can also be realized refrigerating function, its operation principle is: the wire that direct current is accessed to thermoelectric element, when electric current flows through the contact position of semiconductor and copper sheet, due to semi-conductive paltie effect, one end temperature that it contacts with copper sheet raises, become hot junction, other end temperature reduces, and becomes cold junction.Cold junction can be used for reducing the process of refrigerastion of temperature, and thermoelectric element is at this moment commonly referred to semiconductor cooler.
Although it is simple in structure that semiconductor heat electric device has, without working medium, noise is little, start the advantages such as rapid, and with respect to thermoelectricity transfer processes such as traditional thermal power generation or vapour compression refrigerations, the efficiency of semiconductor thermoelectric conversion is very low.This thermoelectricity conversion regime does not have practicality in most cases, can only be applied to some special occasions.
Cause a major reason that semiconductor heat electric device conversion efficiency of thermoelectric is low be hot junction by element internal the diabatic process to cold junction.This diabatic process has reduced cold warm end temperature difference for thermoelectricity transfer process, and conversion efficiency of thermoelectric is declined; For process of refrigerastion, the cold that directly causes cold junction externally to export to the heat transfer of cold junction diminishes, thereby coefficient of refrigerating performance declines.Therefore, minimizing hot junction is the important method that improves conversion efficiency of thermoelectric to the heat transfer of cold junction.
Two kinds of approach can be passed through to the heat transfer of cold junction in hot junction: 1. by the heat conduction of semiconductor thermoelectric arm.This heat transfer path is realized for a long time, and is subject to a lot of research.The adjoint process when heat conduction by thermoelectric arm is thermoelectric element work is inevitable.2. by the heat transfer of inner space.This heat transfer can be divided into two aspects, in inner space the free convection heat transfer of air and hot surface to the radiant heat transfer of cold surface.While working due to thermoelectric element, the temperature difference of hot junction and cold junction can reach tens degree and even goes up Baidu, so hot junction is very large by this approach to the heat output of cold junction, can reduce the heat output of this approach by technological means.
Existing semiconductor heat electric device is not controlled the 2nd kind of above-mentioned heat transfer path, is the one of the main reasons that causes conversion efficiency of thermoelectric low.
In order to prevent that extraneous foreign matter (as dust etc.) from entering thermoelectric element inside, cause short circuit, particularly for semiconductor cooler, also need the harm that prevents that airborne water vapour from condensing at cold junction.Existing semiconductor heat electric device is used organic silica gel to seal in side for this reason.But under the huge action of thermal difference of the cold and hot end of thermoelectric element, through repeatedly working for a long time, there is the possibility losing efficacy in the sealing of organic silica gel.Therefore be necessary to find thermoelectric element is carried out to more reliable encapsulating method.
In order to be conducive to thermoelectric element and the external world, carry out efficient heat transfer, need to heat transfer element be installed in insulated ceramic plates, as radiator.In order to eliminate the contact heat resistance between radiator and insulated ceramic plates, need to apply great pressure to the contact-making surface of the two, this pressure is also applied on Ceramic insulator and semiconductor thermoelectric arm.In the situation that there is large quantity space in thermoelectric element inside, can form the situation of stress surface unbalance stress, may form mechanical damage to insulated ceramic plates and thermoelectric arm.Therefore need to improve the stress of thermoelectric element stress surface, to improve the mechanical safety of stress surface.
Summary of the invention
Low in order to overcome existing semiconductor heat electric device conversion efficiency of thermoelectric, eliminate the possibility that organic silica gel seal failure causes short circuit, and the mechanical safety that improves thermoelectric element stress surface, the utility model provides a kind of high-performance semiconductor thermoelectric element, object is by the adiabatic encapsulant of semiconductor thermoelectric element internal space-filling, eliminate free convection heat transfer and the radiant heat transfer of element internal, improve conversion efficiency of thermoelectric.Adiabatic encapsulant is simultaneously also for semiconductor heat electric device provides reliable integrated sealing, and makes stress surface form uniform stress, improves mechanical safety.
The technical solution adopted in the utility model is as follows:
A kind of high-performance semiconductor thermoelectric element, comprise P type semiconductor thermoelectric arm, N type semiconductor thermoelectric arm, copper sheet, insulated ceramic plates and wire, between two insulated ceramic plates, be filled with adiabatic encapsulant, adiabatic encapsulant is full of the space between P type semiconductor thermoelectric arm, N type semiconductor thermoelectric arm, copper sheet and insulated ceramic plates.
Further, described adiabatic encapsulant is hard-foam polyurethane.
The operation principle of this high-performance semiconductor thermoelectric element is: when thermoelectric element becomes electric energy for the thermal power transfer that hot junction is absorbed, element two ends are because heat absorption produces temperature difference, semiconductor thermoelectric arm is under temperature difference effect, due to Seebeck effect, between hot junction and cold junction, form voltage, thereby heat energy is transformed into electric energy.The adiabatic encapsulant of filling in element stops hot junction to be conducted heat to cold junction by free convection and thermal radiation, has improved the temperature difference of hot junction and cold junction, thereby can significantly improve the conversion efficiency of thermoelectric of element.
When element is used for electric energy to be transformed into heat energy, by wire access direct current, when electric current flows through semiconductor thermoelectric arm, because making thermoelectric arm one end temperature, paltie effect raises, and other end temperature declines, and one end that temperature is low can be for refrigeration.The adiabatic encapsulant of installing in element has reduced the heat transfer of hot junction to cold junction, thereby cold junction can externally be exported more cold, and coefficient of refrigerating performance increases.
High-performance semiconductor thermoelectric element of the present utility model, owing to having filled adiabatic encapsulant at element internal, than existing semiconductor heat electric device, has the following advantages:
1. adopt hard-foam polyurethane as adiabatic encapsulant, because the thermal conductivity of hard-foam polyurethane is only up to 0.022W/ (mK), the hard-foam polyurethane of therefore filling has not only been eliminated free convection heat transfer and the radiant heat transfer of hot junction to cold junction, and also very little by the heat conduction amount of hard-foam polyurethane, these can significantly improve the conversion efficiency of thermoelectric of element.
2. adopt airless spraying foaming technique to manufacture hard-foam polyurethane, by this technology, at the inner hard-foam polyurethane of filling of thermoelectric element, there is rate of closed hole high (being greater than 95%), the feature of moisture content little (being less than 1%), thus guarantee that the hard-foam polyurethane forming has extremely low thermal conductivity.Because the liquid material to surface spraying has high mobility and permeability, thereby the hard-foam polyurethane forming and the surperficial firmly bonding that produces, adhesion strength surpasses the tearing strength of hard-foam polyurethane itself.Therefore, hard-foam polyurethane is connected with element internal surface, and element internal is formed to integrated sealing, makes internal circuit with extraneous thoroughly isolated.This sealing means not only can improve the reliability of thermoelectric element sealing, can also save the technical process of snearing fluid sealant in thermoelectric element manufacture process.
3. the compression strength of hard-foam polyurethane is more than 600kPa, semiconductor thermoelectric element internal has been filled after the adiabatic encapsulant of this high compressive strength, make the stressed uniform stressed state that becomes of insulated ceramic plates, and alleviated the pressure to semiconductor thermoelectric arm, thereby improved the mechanical safety of semiconductor heat electric device.
4. it is simple in structure that this high-performance semiconductor thermoelectric element the utility model proposes had both retained thermoelectric element, without working medium, noise is little, start advantage rapidly, by filling hard-foam polyurethane at element internal, improve the conversion efficiency of thermoelectric of element, overcome the low problem of existing semiconductor thermoelectric efficiency of element, can greatly improve the practical application potentiality of semiconductor heat electric device.Also improve the sealing reliability of thermoelectric element simultaneously, strengthened the mechanical safety of stressed member.
Accompanying drawing explanation
Fig. 1 is existing semiconductor thermoelectric component structure schematic diagram;
Fig. 2 is a kind of high-performance semiconductor thermoelectric element of the utility model structural representation;
Fig. 3 is that the A-A of Fig. 2 is to profile.
In figure, 1-P type semiconductor thermoelectric arm, 2-N type semiconductor thermoelectric arm, 3-copper sheet, 4-insulated ceramic plates, the adiabatic encapsulant of 5-, 6-wire, 7-hot junction, 8-cold junction.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Existing semiconductor heat electric device has simple in structure, and without operation working medium, noise is little, start advantage rapidly, but also existing conversion efficiency of thermoelectric low, there is the risk of seal failure in organic silica gel, and the shortcoming that bears immense pressure of insulated ceramic plates discontinuity, semiconductor thermoelectric arm.
By reference to the accompanying drawings 2 and accompanying drawing 3, a kind of high-performance semiconductor thermoelectric element of the utility model mainly comprises P type semiconductor 1(thermoelectric arm), N type semiconductor 2(thermoelectric arm), copper sheet 3, insulated ceramic plates 4, adiabatic encapsulant 5 and wire 6.Adiabatic encapsulant 5 is filled in the middle of two insulated ceramic plates 4, fills up the gap between P type semiconductor 1, N type semiconductor 2 and copper sheet 3.
When insulated ceramic plates 4 one end absorb heat, semiconductor thermoelectric arm produces voltage at wire 6 two ends under action of thermal difference, thereby realize, heat energy is transformed into electric energy.Or when wire 6 access direct current, semiconductor thermoelectric arm two end formation temperatures are poor, and the cold junction that temperature is low can be for process of refrigerastion.The adiabatic encapsulant of filling in element has been eliminated hot junction and to cold junction, has been carried out free convection heat transfer and radiant heat transfer by inner space, has increased the temperature difference of hot junction and cold junction for thermoelectricity transfer process, and conversion efficiency of thermoelectric is improved.For process of refrigerastion, reduce the heat output of hot junction to cold junction, increased the externally refrigerating capacity of output of cold junction, improved coefficient of refrigerating performance.
Semiconductor thermoelectric element internal is filled after adiabatic encapsulant 5, because adiabatic encapsulant 5 and thermoelectric arm, copper sheet and insulated ceramic plates are combined closely, element internal space is formed to integrated sealing.The sealing of 5 pairs of thermoelectric element internal circuits of heat-insulating material is not only safe and reliable, and can save existing semiconductor heat electric device manufacture in the technical process of side snearing organosilicon sealant.
The adiabatic encapsulant that the utility model adopts has high compression strength, when it is filled behind full element internal space, can be to insulated ceramic plates, and the stress surfaces such as thermoelectric arm carry out effective mechanical protection, have strengthened the mechanical safety of semiconductor heat electric device.
Realize the concrete grammar that the utility model can adopt as follows:
1, P type semiconductor 1, N type semiconductor 2, copper sheet 3 and wire 6 are welded by circuit rule, form pre-spare part.
2, two insulated ceramic plates are fixed on to the two ends of pre-spare part
3, four plate washers are fixed on to four sides of pre-spare part.Wherein a plate washer is reserved two apertures, thereby can pass two wires.Four plate washers are opened a suitably hole for size in position, as spray into the spout of hard-foam polyurethane colloid material to pre-spare part inside.
4, use four high pressure painting rifles simultaneously that hard-foam polyurethane black and white material colloid is inner by the pre-spare part of four aperture spirts of plate washer.Hard-foam polyurethane adopts the manufacture of airless spraying foaming technique.
5. use and fill up the aperture on plate washer with the plectane of the identical material of plate washer.
By the described manufacture method of above program, the high-performance semiconductor thermoelectric element that inside has adiabatic encapsulant machines.One end input heat to thermoelectric element, can produce voltage at wire two ends.Or direct current is accessed to wire, in one end of thermoelectric element, can produce low temperature.
The operation principle with the high-performance semiconductor thermoelectric element of adiabatic encapsulant is: depend on Seebeck effect and paltie effect that semiconductor is stronger, thermoelectric element can be directly changed into electric energy by heat energy, or converts electric energy to heat energy and externally export.The inner adiabatic encapsulant of filling of thermoelectric element has stoped free convection heat transfer and the radiant heat transfer of element hot junction 7 to cold junction 8, can significantly improve conversion efficiency of thermoelectric.
Adiabatic encapsulant and thermoelectric element internal table mask have firmly bonding, thereby internal circuit is formed to integrated sealing, are a kind of reliable sealing means.The adiabatic encapsulant with high compression strength can also make the stressed more even of insulated ceramic plates, alleviates the pressure to thermoelectric arm, improves the mechanical safety of force-summing element.
Claims (2)
1. a high-performance semiconductor thermoelectric element, comprise P type semiconductor thermoelectric arm, N type semiconductor thermoelectric arm, copper sheet, insulated ceramic plates and wire, it is characterized in that, between two insulated ceramic plates, be filled with adiabatic encapsulant, adiabatic encapsulant is full of the gap between P type semiconductor thermoelectric arm, N type semiconductor thermoelectric arm, copper sheet and two insulated ceramic plates.
2. a kind of high-performance semiconductor thermoelectric element according to claim 1, is characterized in that, described adiabatic encapsulant is hard-foam polyurethane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420107635.7U CN203746912U (en) | 2014-03-11 | 2014-03-11 | High-performance semiconductor thermoelectric element |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420107635.7U CN203746912U (en) | 2014-03-11 | 2014-03-11 | High-performance semiconductor thermoelectric element |
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| CN203746912U true CN203746912U (en) | 2014-07-30 |
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| CN201420107635.7U Expired - Fee Related CN203746912U (en) | 2014-03-11 | 2014-03-11 | High-performance semiconductor thermoelectric element |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900795A (en) * | 2015-06-10 | 2015-09-09 | 南京师范大学 | External plate type semiconductor thermoelectric component |
| CN106816524A (en) * | 2015-11-27 | 2017-06-09 | 比亚迪股份有限公司 | A kind of semiconductor chilling plate and preparation method thereof |
| CN107990589A (en) * | 2017-12-11 | 2018-05-04 | 西华大学 | A kind of unconventional thermoelectric unit |
| CN109841723A (en) * | 2017-11-25 | 2019-06-04 | 成志华 | A kind of thermoelectric mechanism |
| CN110504866A (en) * | 2019-08-23 | 2019-11-26 | 东北大学 | A kind of in-pipeline detector automatic switchover type temperature difference electricity generation device |
| CN113594345A (en) * | 2021-06-23 | 2021-11-02 | 华为技术有限公司 | Thermoelectric submodule, thermoelectric device and wearable equipment |
| CN114551707A (en) * | 2021-03-10 | 2022-05-27 | 中国科学院理化技术研究所 | Low-temperature thermoelectric device and preparation method thereof |
-
2014
- 2014-03-11 CN CN201420107635.7U patent/CN203746912U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900795A (en) * | 2015-06-10 | 2015-09-09 | 南京师范大学 | External plate type semiconductor thermoelectric component |
| CN106816524A (en) * | 2015-11-27 | 2017-06-09 | 比亚迪股份有限公司 | A kind of semiconductor chilling plate and preparation method thereof |
| CN109841723A (en) * | 2017-11-25 | 2019-06-04 | 成志华 | A kind of thermoelectric mechanism |
| CN107990589A (en) * | 2017-12-11 | 2018-05-04 | 西华大学 | A kind of unconventional thermoelectric unit |
| CN110504866A (en) * | 2019-08-23 | 2019-11-26 | 东北大学 | A kind of in-pipeline detector automatic switchover type temperature difference electricity generation device |
| CN114551707A (en) * | 2021-03-10 | 2022-05-27 | 中国科学院理化技术研究所 | Low-temperature thermoelectric device and preparation method thereof |
| CN113594345A (en) * | 2021-06-23 | 2021-11-02 | 华为技术有限公司 | Thermoelectric submodule, thermoelectric device and wearable equipment |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140730 Termination date: 20170311 |
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| CF01 | Termination of patent right due to non-payment of annual fee |