CN203674215U - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
- Publication number
- CN203674215U CN203674215U CN201420009173.5U CN201420009173U CN203674215U CN 203674215 U CN203674215 U CN 203674215U CN 201420009173 U CN201420009173 U CN 201420009173U CN 203674215 U CN203674215 U CN 203674215U
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- diode chip
- backlight unit
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Abstract
The utility model provides a light emitting diode. The light emitting diode comprises a substrate and a light emitting diode chip assembly arranged on the substrate. The light emitting diode chip assembly comprises a first light emitting diode chip and a second light emitting diode chip. The first light emitting diode chip and the second light emitting diode chip are separated and reversely connected in parallel. The first light emitting diode chip and the second light emitting diode chip form mutual reverse protection so that reverse voltage resistance performance of the light emitting diode is increased and a failure rate of the light emitting diode is reduced.
Description
Technical field
The utility model relates to a kind of semiconductor technology, relates in particular to a kind of light-emitting diode.
Background technology
(Light Emitting Diode is called for short: be LED) a kind of to be undertaken compoundly by electronics and hole, discharge the semiconductor device of photon light-emitting diode.Because light-emitting diode has advantages of that volume is little, the life-span is long, driving voltage is low, reaction speed is fast, earthquake-proof function is good, be widely used in the special lighting applications such as general illumination field and traffic instruction, stage lighting.
In actual applications, light-emitting diode is generally directly connected in the AC power of 110V or 220V by the resistance of 50K Ω～200K Ω of series connection.But in use, the reverse withstand voltage properties of diode is poor, easily breakdown causing lost efficacy.Therefore, need the light-emitting diode that proposes a kind of resistance to reverse breakdown badly.
Utility model content
The utility model provides a kind of light-emitting diode, to improve the reverse withstand voltage properties of light-emitting diode, reduces the failure rate of light-emitting diode.
The utility model provides a kind of light-emitting diode, comprises substrate, and is arranged on the LED chip component on described substrate;
Wherein, described LED chip component comprises the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit; Described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit are separated and reverse parallel connection setting.
Light-emitting diode as above, wherein, described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit include resilient coating, luminous zone; Described resilient coating is arranged on described substrate; Described luminous zone is arranged on described resilient coating.
Light-emitting diode as above, wherein, also comprises passivation layer; Described passivation layer covers the region between surface and described the first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit of the surface of described the first light-emitting diode chip for backlight unit, described the second light-emitting diode chip for backlight unit.
Light-emitting diode as above, wherein, also comprises bonding wire electrode; Described bonding wire electrode is by the window of offering on described passivation layer, the described resilient coating of described the first light-emitting diode chip for backlight unit is connected with the described luminous zone of described the second light-emitting diode chip for backlight unit, the described luminous zone of described the first light-emitting diode chip for backlight unit is connected with the described resilient coating of described the second light-emitting diode chip for backlight unit, makes described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit reverse parallel connection setting.
The light-emitting diode that the utility model provides, comprises substrate, and is arranged on the LED chip component on substrate; Wherein, LED chip component comprises the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit; The first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit are separated and reverse parallel connection setting.By the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit are separated and reverse parallel connection setting; make the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit reverse protection each other; thereby improve the reverse withstand voltage properties of light-emitting diode, reduce the failure rate of light-emitting diode.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model light-emitting diode embodiment mono-;
Fig. 2 is the end view of the utility model light-emitting diode embodiment mono-.
Embodiment
Fig. 1 is the structural representation of the utility model light-emitting diode embodiment mono-, and Fig. 2 is the end view of the utility model light-emitting diode embodiment mono-.With reference to Fig. 1 and Fig. 2, the light-emitting diode that the present embodiment provides specifically can comprise substrate 100, and is arranged on the LED chip component 200 on substrate 100.
Wherein, LED chip component 200 comprises the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220; The first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220 are separated and reverse parallel connection setting.
As shown in Figure 2, in the present embodiment, the first light-emitting diode chip for backlight unit 210 has identical chip structure with the second light-emitting diode chip for backlight unit 220, concrete, can comprise resilient coating 211, resilient coating 221, and luminous, and 212, luminous zone 222; Wherein, resilient coating 211 and resilient coating 221 are all arranged on substrate 100; Luminous zone 212 is arranged on resilient coating 211, and luminous zone 222 is arranged on resilient coating 221.
Further, the light-emitting diode that the present embodiment provides also comprises passivation layer 230, passivation layer 230 is specifically as follows insulating material, passivation layer 230 covers the region between surface and the first light-emitting diode chip for backlight unit 210 and second light-emitting diode chip for backlight unit 220 of surface, the second light-emitting diode chip for backlight unit 220 of the first light-emitting diode chip for backlight unit 210, thereby ensures the good insulation of the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220.
Be understandable that, in order to realize the electrical connection of the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220, the light-emitting diode that the present embodiment provides also comprises bonding wire electrode 240, concrete, can on passivation layer 230, offer window, bonding wire electrode 240 can be by the window of offering on passivation layer 230, the resilient coating of the first light-emitting diode chip for backlight unit 210 is connected with the luminous zone of the second light-emitting diode chip for backlight unit 220, the luminous zone of the first light-emitting diode chip for backlight unit 210 is connected with the resilient coating of the second light-emitting diode chip for backlight unit 220, form PN junction, make the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220 reverse parallel connection settings.
Optionally, in actual applications, the material of the substrate 100 in the present embodiment can be sapphire, the material of resilient coating 211 and resilient coating 221 can be n type gallium nitride, the material of luminous zone 212 and luminous zone 222 can be P type gallium nitride, the material of passivation layer 230 can be silica, and the present embodiment does not limit this.
It should be noted that, in the time of light-emitting diode incoming transport circuit that the present embodiment provides, in the time that operating current is positive half wave electric current, the first light-emitting diode chip for backlight unit 210 conductings, light-emitting diode is normally worked; In the time that operating current is negative half-wave current, the second light-emitting diode chip for backlight unit 220 conductings, light-emitting diode is normally worked; And by voltage clamp effect, guarantee that reverse voltage that light-emitting diode is subject to is in 3V left and right, in the scope that can bear at nitride PN junction completely.
The technical scheme of the present embodiment; by the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit being separated and reverse parallel connection is arranged on substrate; make the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit reverse protection each other; guarantee that reverse voltage that light-emitting diode can bear is within the scope of light-emitting diode chip for backlight unit acceptable; thereby improve the reverse withstand voltage properties of light-emitting diode, reduced the failure rate of light-emitting diode.
Finally it should be noted that: above each embodiment, only in order to the technical solution of the utility model to be described, is not intended to limit; Although the utility model is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the scope of the each embodiment technical scheme of the utility model.
Claims (4)
1. a light-emitting diode, is characterized in that, comprises substrate, and is arranged on the LED chip component on described substrate;
Wherein, described LED chip component comprises the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit; Described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit are separated and reverse parallel connection setting.
2. light-emitting diode according to claim 1, is characterized in that, described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit include resilient coating, luminous zone; Described resilient coating is arranged on described substrate; Described luminous zone is arranged on described resilient coating.
3. light-emitting diode according to claim 2, is characterized in that, also comprises passivation layer; Described passivation layer covers the region between surface and described the first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit of the surface of described the first light-emitting diode chip for backlight unit, described the second light-emitting diode chip for backlight unit.
4. light-emitting diode according to claim 3, is characterized in that, also comprises bonding wire electrode; Described bonding wire electrode is by the window of offering on described passivation layer, the described resilient coating of described the first light-emitting diode chip for backlight unit is connected with the described luminous zone of described the second light-emitting diode chip for backlight unit, the described luminous zone of described the first light-emitting diode chip for backlight unit is connected with the described resilient coating of described the second light-emitting diode chip for backlight unit, makes described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit reverse parallel connection setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420009173.5U CN203674215U (en) | 2014-01-07 | 2014-01-07 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420009173.5U CN203674215U (en) | 2014-01-07 | 2014-01-07 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203674215U true CN203674215U (en) | 2014-06-25 |
Family
ID=50970480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420009173.5U Expired - Lifetime CN203674215U (en) | 2014-01-07 | 2014-01-07 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203674215U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293626A (en) * | 2016-03-31 | 2017-10-24 | 比亚迪股份有限公司 | LED chip, LED core chip package and preparation method |
| US10608020B2 (en) | 2018-04-03 | 2020-03-31 | Au Optronics Corporation | Display panel |
-
2014
- 2014-01-07 CN CN201420009173.5U patent/CN203674215U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293626A (en) * | 2016-03-31 | 2017-10-24 | 比亚迪股份有限公司 | LED chip, LED core chip package and preparation method |
| US10608020B2 (en) | 2018-04-03 | 2020-03-31 | Au Optronics Corporation | Display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104470048A (en) | Power Supply Device and Luminaire | |
| CN105576103A (en) | Light emitting device | |
| CN203674215U (en) | Light emitting diode | |
| CN103647540A (en) | Solid-state wide-voltage isolation type direct-current relay | |
| CN102098849A (en) | Light-emitting diode (LED) driving chip | |
| CN105578712A (en) | Light-emitting module and circuit board thereof | |
| CN204538077U (en) | LED chip and use the light-emitting device of this LED chip | |
| CN204634101U (en) | Based on the Anti-surging LED drive circuit of piezo-resistance | |
| CN203934064U (en) | A kind of multi-channel type LED driving power | |
| CN102201403A (en) | Thyristor type LED (ight emitting diode) open protector | |
| CN102412358B (en) | Packaging substrate | |
| CN103094430B (en) | Luminous structure | |
| CN202043318U (en) | Open circuit protector for LED (light-emitting diode) | |
| CN204680688U (en) | A kind of LED encapsulation structure | |
| CN104822192A (en) | LED energy-saving lamp lightning protection drive circuit | |
| CN206042442U (en) | Led linear drive circuit and led circuit | |
| CN104822193A (en) | Anti-surge LED drive circuit based on voltage-stabilizing diode | |
| CN205793510U (en) | A kind of AC LED circuit | |
| CN204482097U (en) | A kind of high-power LED drive circuit | |
| CN204634103U (en) | There is the simple and easy LED driving circuit of energy-saving lamp of surge protection function | |
| CN102291876B (en) | Open circuit protector of light-emitting diode (LED) | |
| CN103367386A (en) | Alternating-current light-emitting diode (LED) | |
| CN203325905U (en) | AC drive COB-packaged LED module | |
| CN103347330A (en) | LED driving control circuit | |
| CN201674698U (en) | Multicore LED integrated drive circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 243000 Anhui province Ma'anshan City Baoqing Road Economic Development Zone No. 399 Building 1 Patentee after: YUANRONG PHOTOELECTRIC TECHNOLOGY CO.,LTD. Address before: 243000 Anhui province Ma'anshan City West Road Economic Development Zone No. 259 South 1- layer Patentee before: EPITOP PHOTOELECTRIC TECHNOLOGY CO.,LTD. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20140625 |
|
| CX01 | Expiry of patent term |