CN102291876B - Open circuit protector of light-emitting diode (LED) - Google Patents
Open circuit protector of light-emitting diode (LED) Download PDFInfo
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- CN102291876B CN102291876B CN2011101161276A CN201110116127A CN102291876B CN 102291876 B CN102291876 B CN 102291876B CN 2011101161276 A CN2011101161276 A CN 2011101161276A CN 201110116127 A CN201110116127 A CN 201110116127A CN 102291876 B CN102291876 B CN 102291876B
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Abstract
The invention relates to an open circuit protector of a light-emitting diode (LED), belonging to the technical field of electronics. The open circuit protector of the LED comprises an individual or an integrated IGBT (insulated gate bipolar transistor) device, a Zener diode and a resistor, wherein the anode of the Zener diode is connected with the anode potential of the IGBT device; the cathode of the Zener diode is connected with the grid electrode of the IGBT device; and the resistor is connected between the grid electrode and the cathode of the IGBT device. When the LED normally works, a voltage at two ends of the open circuit protector which is in parallel connection with the LED is low, an MOS (metal oxide semiconductor) channel of the IGBT is shut off and the whole open circuit protector is in a shutoff state; and when the LED opens circuit, the voltage at the two ends of the open circuit protector which is in parallel connection with the LED is rapidly boosted, the MOS channel of the IGBT is turned on, the IGBT is conducted, and a positive direction current flowing through a P-base region enables a parasitic thyristor to turn on and enter a latch state, so that open circuit protection is provided for the LED. After the open circuit structure enters the latch state, the voltage at the two ends of the open circuit structure is rapidly reduced, and the latch state can be kept even if no grid control voltage exists. The open circuit protector of the LED has the characteristics of fast starting and low power consumption.
Description
Technical field
The invention belongs to electronic technology field, relate to the open-circuit-protection structure of light-emitting diode.
Background technology
In recent years,, along with the fast development of light-emitting diode (LED) technique and technology, adopt great power LED to increase year by year as the light fixture of light emitting source, its power can be from several watts to upper hectowatt.High-power LED lamp mostly adopts the structure of LED series connection, uses constant current source power supply.Yet in actual applications, the series LED lamp but has an obvious shortcoming, if that is exactly that a LED open circuit is arranged in the LED that connects, whole LED lamp has not all worked.This shortcoming of series LED light fixture has increased the maintenance cost of light fixture significantly, has hindered promoting the use of of high-power LED lamp, and brings risk for some application-specific such as warning lamp, mine lamp, emergency light etc.In order to prevent LED when open circuit, the LED lamp can also be bright, need to guarantee the fail safe that light fixture uses at the LED two ends of each series connection open-circuit protector in parallel.
The open-circuit protector of LED is the device (or circuit) at a kind of LED of being connected in parallel on two ends; when the open circuit phenomenon appears in certain LED in the series LED circuit; the open-circuit protector of LED can in time start; the current channel of series LED circuit is provided; even make in the series LED circuit when open circuit phenomenon appears in certain LED, whole LED lamp can also continue luminous.
The LED open-circuit protector of having developed at present has two kinds of structures: Zener diode type and thyristor-type.Zener diode type open-circuit protector provides open-circuit-protection by the reverse breakdown characteristics of the Zener diode in parallel with LED for light fixture.At present, some LED manufacturer directly is packaged together Zener diode and LED, namely is made into the LED with open-circuit-protection.But the conduction voltage drop of Zener diode own is large, power consumption is larger, makes and adopts Zener diode to have equally the larger drawback of power consumption as the open-circuit protector of LED.The thyristor-type open-circuit protector provides open-circuit-protection by the breech lock characteristic of the application thyristor in parallel with LED for light fixture, and because conduction voltage drop after its breech lock is low, power consumption is little, is a kind of open-circuit-protection device of excellent performance.But thyristor itself is a kind of current driving apparatus (three terminal device); in the situation that there is no the problem of current drives difficulty in starting; this makes and adopts the open-circuit protector of thyristor as LED; when open circuit appears in LED, because can not in time starting, thyristor can not provide actual circuit cut-off protection.
Summary of the invention
The invention provides the open-circuit protector of a kind of light-emitting diode (LED); this open-circuit protector has the characteristics fast, low in energy consumption that start; when use in parallel with LED can avoid in the series LED circuit occurring the LED open circuit better; the phenomenon of the failure that whole LED lamp does not all work, thus realize more efficiently the open circuit protecting function of LED.
Technical solution of the present invention is as follows:
A kind of open-circuit protector of light-emitting diode, as shown in Figure 1, comprise an IGBT device, a Zener diode D and a resistance R; The anode of Zener diode D is connected with the anode of IGBT device, and the negative electrode of Zener diode D is connected with the grid of IGBT device, and resistance R is connected between the grid and negative electrode of IGBT device.
Described IGBT device is plane or groove-shaped IGBT device, and its anode construction is electric field termination structure, transparent anode structure or short circuit anode construction.
Described IGBT device, Zener diode D and resistance R can be integrated on same chip, form the integrated light-emitting diode open-circuit protector; And described integrated light-emitting diode open-circuit protector is compatible mutually with existing IGBT manufacturing process, can not increase the complex process degree of device.
The open-circuit protector of light-emitting diode provided by the invention is comprised of the bleeder circuit that IGBT device and Zener diode and resistance form.During use, the open-circuit protector of this light-emitting diode and light-emitting diode are together in parallel, when light-emitting diode works, the voltage at open-circuit protector two ends is lower, in open-circuit protector, the IGBT device grids is lower by the voltage that bleeder circuit obtains, and the MOS raceway groove of IGBT device turn-offs, and whole open-circuit-protection structure is turn-offed, the leakage current of open-circuit-protection structure is very little, does not affect the work of light-emitting diode; When light-emitting diode open-circuit; open-circuit-protection device both end voltage raises rapidly; in open-circuit protector, the IGBT device grids is higher by the voltage that bleeder circuit obtains; make the MOS raceway groove of IGBT device open; thereby the IGBT device enters conducting state;, by the optimal design of IGBT device architecture, flow through P during the IGBT break-over of device
-The forward current that base is large is opened parasitic thyristor structure, makes total enter latch mode, thereby provides open-circuit-protection (for the series LED circuit provides current channel) for light-emitting diode; After in the IGBT device, the parasitic thyristor structure is opened and entered latch mode, even without grid-control voltage, also can keep latch mode.This makes the present invention have to start characteristics fast, low in energy consumption, when use in parallel with LED can avoid better in the series LED circuit occurring that LED opens a way, and the phenomenon of the failure that whole LED lamp does not all work, thus realize more efficiently the open circuit protecting function of LED.
Description of drawings
Fig. 1 is the electrical block diagram of the open-circuit protector of light-emitting diode provided by the invention.Wherein D or 24 is Zener diode, and R or 23 is resistance, and Q is the IGBT device.
Fig. 2 is integrated light-emitting diode open-circuit protector structural representation provided by the invention.Wherein 11 are the metallization anode, and 12 is P
+Substrate, 13 is N
-Drift region, 14 is P
-Base, 15 is a N
+Contact zone, 16 is P
+Contact zone, 17 is gate oxide, and 18 is polygate electrodes, and 19 is the dielectric between polygate electrodes and metallization negative electrode, and 20 is the 2nd N
+Contact zone, 21 is the 2nd N
+The metal level on 20 surfaces, contact zone, 22 are the metallization negative electrode, and 23 is integrated resistor, and 24 is integrated Zener diode.
Fig. 3 is the anode I-V characteristic curve simulation result of integrated light-emitting diode open-circuit protector provided by the invention.
Embodiment
A kind of open-circuit protector of light-emitting diode, as shown in Figure 1, comprise an IGBT device, a Zener diode D and a resistance R; The anode of Zener diode D is connected with the anode of IGBT device, and the negative electrode of Zener diode D is connected with the grid of IGBT device, and resistance R is connected between the grid and negative electrode of IGBT device.
Described IGBT device, Zener diode D and resistance R are integrated on same chip, as shown in Figure 2, form the integrated light-emitting diode open-circuit protector; Described IGBT device comprises P
+Substrate 12, P
+Metallization anode 11, the P at substrate 12 back sides
+The N in substrate 12 fronts
-Drift region 13, N
-P in drift region 13
- Base 14, be positioned at P side by side
-In base 14 and with the N that is connected of metallization negative electrode 22
+ Contact zone 15 and P
+Contact zone 16, covering P
-The polygate electrodes 18 on the gate oxide 17 on 14 surfaces, base, covering gate oxide layer 17 surfaces, the dielectric 19 between polygate electrodes 18 and metallization negative electrode 22; Away from P
-The N of base 14
-Has the 2nd N that the metallization anode potential is guided to device surface in drift region 13
+ Contact zone 20, the two N
+The surface of contact zone 20 is metal levels 21, and polygate electrodes 18 extends to metallization negative electrode 22 and the 2nd N
+Between the metal level 21 on 20 surfaces, contact zone so that device connect to use; The 2nd N of the anode of described Zener diode D and IGBT device
+The metal level 21 on 20 surfaces, contact zone is connected.
Described P
+The semi-conducting material of substrate 12 can be silicon (Si), carborundum (SiC), GaAs (GaAs) or gallium nitride (GaN).
The open-circuit protector of above-mentioned integrated light-emitting diode, by the P of IGBT device
+Substrate 12 and N
-The PN junction that drift region 13 forms and surface the 2nd N
+Surface is guided to anode potential in contact zone 20, and the bleeder circuit that forms at the integrated Zener diode of device surface and resistance.
When the light-emitting diode in parallel with this open-circuit-protection structure works, the voltage at open-circuit-protection structure two ends is lower, in the open-circuit-protection structure, the IGBT device grids is lower by the voltage that bleeder circuit obtains, the MOS raceway groove of IGBT device turn-offs, whole open-circuit-protection structure is turn-offed, the leakage current of open-circuit-protection structure is very little, does not affect the work of light-emitting diode; When the light-emitting diode open-circuit in parallel with this open-circuit-protection structure, open-circuit-protection structure both end voltage raises rapidly, and in the open-circuit-protection structure, the IGBT device grids is higher by the voltage that bleeder circuit obtains, and the MOS raceway groove of IGBT is opened, and IGBT enters conducting state., by the optimal design of IGBT structure, flow through P during the IGBT conducting
-The forward current that base is large is opened parasitic thyristor structure, makes total enter latch mode, thereby provides open-circuit-protection for light-emitting diode.After the open-circuit-protection structure entered latch mode, the voltage at open-circuit-protection structure two ends reduced rapidly, even without gate control voltage, also can keep latch mode.
Fig. 3 is the anode I-V characteristic curve simulation result of integrated light-emitting diode open-circuit protector provided by the invention.As can be seen from the figure, when the voltage at open-circuit-protection structure two ends hanged down, the open-circuit-protection structure was turn-offed, and the leakage current of open-circuit-protection structure is very little, can not affect the work of light-emitting diode; During higher than certain voltage, because the MOS raceway groove of IGBT is opened, IGBT enters conducting state, and parasitic thyristor structure is opened, and makes total enter latch mode when the voltage at open-circuit-protection structure two ends, thereby provides open-circuit-protection for light-emitting diode.After the open-circuit-protection structure entered latch mode, the voltage at open-circuit-protection structure two ends reduced rapidly, even without gate control voltage, also can keep latch mode.
Should illustrate, light-emitting diode open-circuit-protection device provided by the present invention is not only applicable to from small-power to the high-power LED field, and is applicable to need to provide in other series circuit configuration the occasion of open-circuit-protection.
Claims (2)
1. the open-circuit protector of a light-emitting diode, comprise the IGBT device, a Zener diode (D or 24) and the resistance (R or 23) that are integrated on same chip; It is characterized in that, the negative electrode of Zener diode (D or 24) is connected with the anode potential of IGBT device, and the anode of Zener diode (D or 24) is connected with the grid of IGBT device, and resistance (R or 23) is connected between the grid and negative electrode of IGBT device;
Described IGBT device is plane or groove-shaped IGBT device, and its anode construction is electric field termination structure, transparent anode structure or short circuit anode construction;
Described IGBT device comprises P
+Substrate (12), P
+Metallization anode (11), the P at substrate (12) back side
+The N that substrate (12) is positive
-Drift region (13), N
-P in drift region (13)
-Base (14), be positioned at P side by side
-In base (14) and with the N that is connected of metallization negative electrode (22)
+Contact zone (15) and P
+Contact zone (16), covering P
-The polygate electrodes (18) on the gate oxide (17) on base (14) surface, covering gate oxide layer (17) surface, be positioned at polygate electrodes (18) and the dielectric (19) between negative electrode (22) of metallizing; Away from P
-The N of base (14)
-Has the 2nd N that the metallization anode potential is guided to device surface in drift region (13)
+Contact zone (20), the 2nd N
+The surface of contact zone (20) is metal level (21), and polygate electrodes (18) extends to metallization negative electrode (22) and the 2nd N
+Between the metal level (21) on contact zone (20) surface so that device connects uses; The negative electrode of described Zener diode (D or 24) and the 2nd N of IGBT device
+The metal level (21) on surface, contact zone (20) is connected.
2. the open-circuit protector of light-emitting diode according to claim 1, is characterized in that, described P
+The semi-conducting material of substrate (12) is silicon, carborundum, GaAs or gallium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101161276A CN102291876B (en) | 2011-05-06 | 2011-05-06 | Open circuit protector of light-emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101161276A CN102291876B (en) | 2011-05-06 | 2011-05-06 | Open circuit protector of light-emitting diode (LED) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102291876A CN102291876A (en) | 2011-12-21 |
| CN102291876B true CN102291876B (en) | 2013-11-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101161276A Expired - Fee Related CN102291876B (en) | 2011-05-06 | 2011-05-06 | Open circuit protector of light-emitting diode (LED) |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1242604A (en) * | 1998-06-26 | 2000-01-26 | 株式会社东芝 | Semiconductor protective device and power conversion device |
| EP1322017A2 (en) * | 2001-12-20 | 2003-06-25 | Siemens Aktiengesellschaft | Differential current protection |
| CN101383287A (en) * | 2008-09-27 | 2009-03-11 | 电子科技大学 | Manufacturing method for vertical DMOS device |
| CN101393927A (en) * | 2008-10-31 | 2009-03-25 | 电子科技大学 | Accumulation layer controlled insulation gate type bipolar transistor |
| CN202043318U (en) * | 2011-05-06 | 2011-11-16 | 电子科技大学 | Open circuit protector for LED (light-emitting diode) |
-
2011
- 2011-05-06 CN CN2011101161276A patent/CN102291876B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1242604A (en) * | 1998-06-26 | 2000-01-26 | 株式会社东芝 | Semiconductor protective device and power conversion device |
| EP1322017A2 (en) * | 2001-12-20 | 2003-06-25 | Siemens Aktiengesellschaft | Differential current protection |
| CN101383287A (en) * | 2008-09-27 | 2009-03-11 | 电子科技大学 | Manufacturing method for vertical DMOS device |
| CN101393927A (en) * | 2008-10-31 | 2009-03-25 | 电子科技大学 | Accumulation layer controlled insulation gate type bipolar transistor |
| CN202043318U (en) * | 2011-05-06 | 2011-11-16 | 电子科技大学 | Open circuit protector for LED (light-emitting diode) |
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| Publication number | Publication date |
|---|---|
| CN102291876A (en) | 2011-12-21 |
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