CN203674177U - Gas phase etching device - Google Patents
Gas phase etching device Download PDFInfo
- Publication number
- CN203674177U CN203674177U CN201320731984.1U CN201320731984U CN203674177U CN 203674177 U CN203674177 U CN 203674177U CN 201320731984 U CN201320731984 U CN 201320731984U CN 203674177 U CN203674177 U CN 203674177U
- Authority
- CN
- China
- Prior art keywords
- ring
- guide wall
- air guide
- vapor phase
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 title claims abstract description 36
- 239000012808 vapor phase Substances 0.000 claims description 32
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 27
- 238000012545 processing Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 42
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- 239000000377 silicon dioxide Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
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- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
The utility model discloses a gas phase etching device for the edge of treating the processing wafer etches. The vapor etching apparatus includes a base, a supporting platform and an annular air guide wall. The seat body is provided with an annular air outlet. The bearing platform is arranged on the base and is surrounded by the annular air outlet. The bearing platform is provided with a first top surface which is used for bearing the wafer to be processed and the outer edge of which is positioned in the edge of the wafer to be processed. The annular air guide wall is arranged on the seat body and surrounds the annular air outlet. The annular gas guide wall is provided with a second top surface with an inner edge positioned outside the edge of the wafer to be processed. The first top surface has a first height relative to the base. The second top surface has a second height relative to the base. The second height is 0.5 to 1.5 times the first height.
Description
Technical field
The utility model relates to a kind of vapor phase etchant device, and particularly relating to one can accurately carry out etched vapor phase etchant device with gas at wafer rear ad-hoc location.
Background technology
General wafer is using monocrystalline silicon as base material, wherein can add the additives such as boron, phosphorus, arsenic or antimony, and to reduce resistance value as object.And conventionally can form the epitaxial layer that thickness is about 5～100 μ m with chemical vapour deposition technique (CVD) on the working face of base material.In brilliant process of heap of stone, volatilize and diffuse in epitaxial layer for fear of the additive of base material itself, causing resistance value to be changed, therefore, before building brilliant process, the back side of base material must first form silicon dioxide (SiO
2) layer.
As shown in Figure 4, on the back side of base material 20, form silicon dioxide layer 22 and become pending wafer 2 afterwards.Because the edge of base material 20 can form lead angle 200 conventionally, therefore, in the time that silicon dioxide layer 22 is shaped, silicon dioxide layer 22 also can be formed at lead angle 200 surfaces.And must be removed at the silicon dioxide layer 22 on lead angle 200 surfaces, its objective is for fear of in follow-up brilliant process of heap of stone, the gas using because of chemical vapour deposition technique reacts and produces thrust with the silicon dioxide layer 22 on lead angle 200.This thrust can make wafer to keep flat, and causes the wafer cannot uniform treatment in processes such as follow-up photomask, development, exposures, and then reduces precision and product quality.
As shown in Figure 5, the silicon dioxide layer 22 on lead angle 200 can form epitaxial layer 24 at the working face of base material 20 after removing, and then obtains wafer 2 '.Hence one can see that, and the step that lip-deep lead angle 200 silicon dioxide layer 22 is removed is quite important for the quality of wafer 2 '.
At present, have and utilize etching gas to carry out the etched practice for the lip-deep silicon dioxide layer 22 of lead angle 200 by known vapor phase etchant device.But, the flow direction of mobile etching gas unstable in this known vapor phase etchant device, although therefore can successfully lip-deep lead angle 200 silicon dioxide layer 22 be removed after etching, but its required etching period is long, make the edge of remaining silicon dioxide layer 22 ' on base material 20 back sides tend to occur rough situation, and cause the quality of wafer 2 ' cannot reach the acceptable standard of client.
Therefore, how providing one can shorten etching period, and after etching, make the vapor phase etchant device of the edge leveling of remaining silicon dioxide layer 22 ' on base material 20 back sides, is that current industry is desired most ardently one of problem dropping into development resources solution.
Utility model content
The utility model provides a kind of vapor phase etchant device, and it is in order to carry out etching to the edge of pending wafer.Vapor phase etchant device comprises pedestal, carrying platform and ring-type air guide wall.Pedestal has ring-type gas outlet.Carrying platform be arranged on pedestal and by ring-type gas outlet around.Carrying platform has to carry the first end face within the edge that above-mentioned pending wafer and outer rim be positioned at above-mentioned pending wafer.Ring-type air guide wall is arranged on pedestal, and is surrounded on outside ring-type gas outlet.Ring-type air guide wall has the second end face outside the edge that inner edge is positioned at above-mentioned pending wafer.The relative pedestal of the first end face has the first height.The relative pedestal of the second end face has the second height.Second is highly 0.5～1.5 times of the first height.
In an execution mode of doing at the utility model, the second above-mentioned height highly equates with first.
In an execution mode of doing at the utility model, above-mentioned ring-type gas outlet is equidistantly surrounded on outside carrying platform.
In an execution mode of doing at the utility model, above-mentioned ring-type air guide wall is equidistantly surrounded on outside ring-type gas outlet.
In an execution mode of doing at the utility model, the inwall of above-mentioned ring-type air guide wall is perpendicular to pedestal.
In an execution mode of doing at the utility model, the inwall of above-mentioned ring-type air guide wall tilts towards carrying platform from bottom to top.
In sum, vapor phase etchant device provided by the utility model is that ring-type air guide wall is set outside ring-type gas outlet, and by ring-type air guide wall, the etching gas being flowed out by ring-type gas outlet is guided.Therefore, etching gas can be by intensively passing through between carrying platform outer wall and the inwall of ring-type air guide wall, and then more thick and fast the edge of pending wafer is carried out to etching.Thus, vapor phase etchant device of the present utility model is after installing ring-type air guide wall, can complete etch process in the shorter time, and after etching, make the edge leveling of remaining silicon dioxide layer on substrate backside, therefore improving yield effectively, and effectively reduce the use amount of chemicals.
Brief description of the drawings
Fig. 1 illustrates the vapor phase etchant device of an execution mode of the present utility model and the side sectional view of pending wafer, and wherein push-down head not yet compresses pending wafer.
Fig. 2 is the another side cutaway view that Fig. 1 is shown, wherein push-down head has compressed pending wafer.
Fig. 3 illustrates the vapor phase etchant device of another execution mode of the present utility model and the side sectional view of pending wafer.
Fig. 4 is the side sectional view that pending wafer is shown.
Fig. 5 illustrates the side sectional view of processing rear wafer.
[symbol description]
1,1 ': vapor phase etchant device
10: housing
100: exhaust outlet
12: pedestal
120: ring-type gas outlet
14: carrying platform
140: the first end faces
150: annular gap
16,16 ': ring-type air guide wall
160: the second end faces
18: push-down head
2: pending wafer
2 ': wafer
20: base material
200: lead angle
22,22 ': silicon dioxide layer
24: epitaxial layer
H1: the first height
H2: the second height
S: process space
Embodiment
Below will disclose multiple execution mode of the present utility model with accompanying drawing, as clearly stated, the details in many practical operations will be explained in the following description.But, should be appreciated that, the details of these practical operations does not apply to limit the utility model.That is to say, in part execution mode of the present utility model, the details of these practical operations is non-essential.In addition,, for the purpose of simplifying accompanying drawing, some known usual structures and element will illustrate in the mode of simply illustrating in the accompanying drawings.
Please refer to Fig. 1 and Fig. 2.Fig. 1 illustrates the vapor phase etchant device 1 of an execution mode of the present utility model and the side sectional view of pending wafer 2, and wherein push-down head 18 not yet compresses pending wafer 2.Fig. 2 is the another side cutaway view that Fig. 1 is shown, wherein push-down head 18 has compressed pending wafer 2.
As shown in Figures 1 and 2, in the present embodiment, vapor phase etchant device 1 comprises housing 10, pedestal 12, carrying platform 14, ring-type air guide wall 16 and push-down head 18.In housing 10, there is processing space S, and the top of housing 10 also has exhaust outlet 100.Pedestal 12 is arranged at housing 10 bottoms, and has ring-type gas outlet 120.The ring-type gas outlet 120 of pedestal is communicated with processes space S.Therefore, vapor phase etchant device 1 can flow out etching gas by the ring-type gas outlet 120 of pedestal 12, for example hydrofluoric acid (HF), but the utility model is not as limit.
The carrying platform 14 of vapor phase etchant device 1 is arranged in housing 10, and be arranged on pedestal 12 and by ring-type gas outlet 120 equidistantly around.Carrying platform 14 has to carry the first end face 140 within the edge that above-mentioned pending wafer 2 and outer rim be positioned at above-mentioned pending wafer 2.The ring-type air guide wall 16 of vapor phase etchant device 1 is arranged in housing 10, and is arranged on pedestal 12.Ring-type air guide wall 16 is equidistantly surrounded on outside the ring-type gas outlet 120 of carrying platform 14.Ring-type air guide wall 16 has the second end face 160 outside the edge that inner edge is positioned at above-mentioned pending wafer 2.
In the time that utilizing the vapor phase etchant device 1 of present embodiment to remove the lead angle 200 lip-deep silicon dioxide layer 22 of base material 20, hope (coordinates with reference to Fig. 4), pending wafer 2 can be put into the processing space S of housing 10, and be placed on carrying platform 14, make the lead angle 200 of base material 20 aim at pedestal 12 ring-type gas outlet 120(that is, aim at the annular gap 150 between carrying platform 14 outer walls and the inwall of ring-type air guide wall 16).Afterwards, etching gas is flowed out by ring-type gas outlet 120, and contact with the lip-deep silicon dioxide layer 22 of lead angle 200 of base material 20 via annular gap 150, and then remove the lip-deep silicon dioxide layer 22 of lead angle 200.
Because present embodiment adopts the mode of vapor phase etchant, thus do not have the diffusion problem causing while adopting corrosive liquid, therefore can remove exactly the lip-deep silicon dioxide layer 22 of lead angle 200.And after etching, be arranged in the etching gas of processing space S, and can be discharged outside housing 10 by the exhaust outlet 100 at housing 10 tops again, complete the work that removes of the silicon dioxide layer 22 at the edge of pending wafer 2.
Hence one can see that, present embodiment arranges ring-type air guide wall 16 outside the ring-type gas outlet 120 of pedestal 12, and utilize ring-type air guide wall 16 to guide the etching gas being flowed out by ring-type gas outlet 120, therefore etching gas can intensively be passed through by the annular gap 150 between carrying platform 14 outer walls and the inwall of ring-type air guide wall 16, and then thick and fast the edge of pending wafer 2 is carried out to etching, etching period is shortened.
As shown in Figure 1, the relative pedestal 12 of the first end face 140 of carrying platform 14 has the first height H 1.The relative pedestal 12 of the second end face 160 of ring-type air guide wall 16 has the second height H 2.Applicant experiment obtains when the second height H 2 is than the first height H 1 when too low, and the effect that ring-type air guide wall 16 is guided etching gas will weaken, and makes etching efficiency variation; When the second height H 2 when too high, overetched problem can occur on the contrary than the first height H 1.Preferably, when the second height H 2 is 0.5～1.5 times of the first height H 1, can make ring-type air guide wall 16 effectively reach the effect of guiding etching gas, and make after etching remaining silicon dioxide layer 22 ' on base material 20 back sides can obtain smooth edge.
More preferably, in the time that the second height H 2 equates with the first height H 1, annular gap 150 between the inwall of carrying platform 14 outer walls and ring-type air guide wall 16 can be minimum, and therefore etching gas can more intensively pass through, and then more thick and fast the edge of pending wafer 2 is carried out to etching.
Be shown in equally in Fig. 1 and Fig. 2, the push-down head 18 of vapor phase etchant device 1 is mounted slidably in housing 10, and can move relative to carrying platform 14, in order to pending wafer 2 is pressed against on the first end face 140 of carrying platform 14.
If be noted that and adopt plane formula push-down head 18,, in the time that the bottom surface of push-down head 18 is not parallel with pending wafer 2, may cause the extreme imbalance of the suffered pressure of pending wafer 2 and the problem of generation fragmentation.
For head it off, present embodiment makes the bottom surface of push-down head 18 have elasticity.Moreover, the bottom surface of push-down head 18 is convex shape towards carrying platform 14, and the protrusion amplitude maximum at place of the bottom center of push-down head 18.Than plane formula push-down head 18, in the time that the push-down head 18 of present embodiment compresses pending wafer 2, the suffered pressure of pending wafer 2 can be gently by center towards edge decrescence, therefore can reduce pending wafer 2 and occur the probability of fragmentation.
In one embodiment, above-mentioned push-down head 18 is air bag, but the utility model is not as limit.
In the present embodiment, the inwall of ring-type air guide wall 16 is perpendicular to pedestal 12, but the utility model is not as limit.Please refer to Fig. 3, it is that the vapor phase etchant device 1 ' of another execution mode of the present utility model and the side sectional view of pending wafer 2 are shown.
As shown in Figure 3, in the present embodiment, housing 10, pedestal 12, carrying platform 14 and push-down head 18 that vapor phase etchant device 1 ' comprises, all identical with the execution mode shown in Fig. 1 and Fig. 2, therefore the position between the structure of each element, function and each element, annexation can, with reference to above-mentioned related description, not repeat them here.
Be noted that at this, the different part of the execution mode shown in present embodiment and Fig. 1 and Fig. 2, be present embodiment ring-type air guide wall 16 ' inwall from bottom to top towards carrying platform 14 tilt (that is, along with the inwall of ring-type air guide wall 16 ' is got over away from pedestal 12, the distance between the inwall of ring-type air guide wall 16 ' and the outer wall of carrying platform 14 is nearer).Thus, the annular gap 150 between carrying platform 14 outer walls and the inwall of ring-type air guide wall 16 ' can dwindle, and therefore etching gas can more intensively pass through, and then more thick and fast the edge of pending wafer 2 is carried out to etching, and etching period is shortened.
By the above detailed description for specific embodiment of the utility model, can find out significantly, vapor phase etchant device provided by the utility model is that ring-type air guide wall is set outside ring-type gas outlet, and by ring-type air guide wall, the etching gas being flowed out by ring-type gas outlet is guided.Therefore, etching gas can be by intensively passing through between carrying platform outer wall and the inwall of ring-type air guide wall, and then more thick and fast the edge of pending wafer is carried out to etching.Thus, vapor phase etchant device of the present utility model, after ring-type air guide wall is installed, can completes etch process, and after etching, make the edge leveling of remaining silicon dioxide layer on substrate backside the shorter time, therefore improving yield effectively, and effectively reduce the use amount of chemicals.
Although the utility model with execution mode openly as above; so it is not in order to limit the utility model; anyly have the knack of this skill person; not departing from spirit and scope of the present utility model; when doing various changes and modification, therefore protection range of the present utility model is when being as the criterion of defining depending on accompanying claim scope.
Claims (6)
1. a vapor phase etchant device, in order to the edge of pending wafer is carried out to etching, is characterized in that, this vapor phase etchant device comprises:
Pedestal, has ring-type gas outlet;
Carrying platform, be arranged on this pedestal and by this ring-type gas outlet around, there is to carry the first end face within the edge that above-mentioned pending wafer and outer rim be positioned at above-mentioned pending wafer; And
Ring-type air guide wall, is arranged on this pedestal, and is surrounded on outside this ring-type gas outlet, has the second end face outside the edge that inner edge is positioned at above-mentioned pending wafer;
Wherein this first end face relatively this pedestal there is the first height, this second end face relatively this pedestal has the second height, and this second is highly this first highly 0.5～1.5 times.
2. vapor phase etchant device according to claim 1, is characterized in that, wherein this second height first highly equates with this.
3. vapor phase etchant device according to claim 1, is characterized in that, wherein this ring-type gas outlet is equidistantly surrounded on outside this carrying platform.
4. vapor phase etchant device according to claim 1, is characterized in that, wherein this ring-type air guide wall is equidistantly surrounded on outside this ring-type gas outlet.
5. vapor phase etchant device according to claim 1, is characterized in that, wherein the inwall of this ring-type air guide wall is perpendicular to this pedestal.
6. vapor phase etchant device according to claim 1, is characterized in that, wherein the inwall of this ring-type air guide wall tilts towards this carrying platform from bottom to top.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102214729U TWM472304U (en) | 2013-08-06 | 2013-08-06 | Vapor etching apparatus |
| TW102214729 | 2013-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203674177U true CN203674177U (en) | 2014-06-25 |
Family
ID=50551813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320731984.1U Expired - Lifetime CN203674177U (en) | 2013-08-06 | 2013-11-19 | Gas phase etching device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN203674177U (en) |
| TW (1) | TWM472304U (en) |
-
2013
- 2013-08-06 TW TW102214729U patent/TWM472304U/en not_active IP Right Cessation
- 2013-11-19 CN CN201320731984.1U patent/CN203674177U/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TWM472304U (en) | 2014-02-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200602 Address after: 558, changta Road, Shihudang Town, Songjiang District, Shanghai Patentee after: Shanghai crystal silicon material Co.,Ltd. Address before: No.1, Lane 445, Section 2, Meishi Road, Yangmei City, Taoyuan County, Taiwan, China Patentee before: WAFER WORKS Corp. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140625 |