CN203612946U - Combined type anodic bonding system based on multi-energy-field coupling - Google Patents
Combined type anodic bonding system based on multi-energy-field coupling Download PDFInfo
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- CN203612946U CN203612946U CN201320673604.3U CN201320673604U CN203612946U CN 203612946 U CN203612946 U CN 203612946U CN 201320673604 U CN201320673604 U CN 201320673604U CN 203612946 U CN203612946 U CN 203612946U
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Abstract
The utility model discloses a combined type anodic bonding system based on multi-energy-field coupling. The system comprises a workbench, a power module, an electromagnetic induction heating device and a driving device, wherein the workbench comprises a first electrode and a second electrode which are parallelly arranged and used for placing a glass device and a silicon device respectively; two ends of the power module are electrically connected with the first electrode and the second electrode respectively; the electromagnetic induction heating device is arranged below the second electrode and used for performing electromagnetic reinforcement on discharge pretreatment and anodic bonding; and the driving device is connected onto the first electrode and used for driving the first electrode to move up and down. The combined type anodic bonding system based on multi-energy-field coupling is simple in overall structure and easy to integrate; electromagnetic induction heating, discharge pretreatment and anodic bonding are integrally controlled, and the regulation is simple; and the whole set of combined bonding technology is easy to realize, parameters are easy to adjust, and the bonding performance controllability is good.
Description
Technical field
The utility model relates to anode linkage technical field, particularly relates to a kind of combined type anode linkage system based on Multi-energy field coupling.
Background technology
Anode linkage technology has important effect in the links such as the making of MEMS device, assembling, encapsulation, is the core technology that is connected multiple silicon process technology, is one of basic means realizing the complicated MEMS structure such as structure, sandwich construction of reporting to the leadship after accomplishing a task on three dimensions.The method that anode linkage adopts high temperature (400～500 ℃) to add high voltage (1000～2000V) at present realizes, its basic principle is connected on silicon chip and glass on high voltage source the two poles of the earth, bonded interface generation physical-chemical reaction under the effect of uniform temperature, voltage, pressure, the chemical bond generation folding impel-OH ,-O ,-H ,-Si etc. forming changes, and on interface, again form the chemical bond that Si-O-Si, Si-OH etc. are new, silicon and glass interface are firmly linked together.Compared with other surface bond technology, anode linkage has that technique is simple, para-linkage interface is less demanding, bond strength is high, sealing and the advantage such as have good stability.Therefore in the MEMS device assembling that sealing, bond strength are had relatively high expectations and encapsulation, anode linkage is indispensable process means.
Current anodic bonding techniques utilizes the microstructure layer of hot mastication glass interface, under certain pressure effect, realize the wiggly slippage at glass surface microcosmic peak, impel the combination interface of glass/silicon to reach the distance of electrostatic force, this is the key that realizes anode linkage, and therefore high temperature is the necessary condition that realizes this anode linkage.But high temperature makes anode linkage easily produce following problem: one, bonding efficiency is low.In the bonding process of silicon/glass, high temperature can make gas expansion in glass micropore, decompose, overflows, and forms gas-bearing formation at bonded interface.Gas drainage difficulty will form hole defect on interface.For gas is discharged smoothly, in wafer level bonding, extensively adopt at present point electrode and multipoint electrode.While adopting this class electrode, the distribution of external electrical field on bonded interface is unevenly, and bonding forms and can only advance gradually to edge from electrode position.Full wafer bonding all completes time (being generally greater than 30min) that need to be longer, and bonding efficiency is low.Its two, high temperature easily causes thermal stress and distortion.High temperature long duration of action easily produces thermal stress on silicon/glass bonding body, causes the distortion of MEMS device, has a strong impact on the performance indications such as fatigue durability, stability, reliability and uniformity of MEMS device volume production.Its three, high-temperature induction metal ion infiltration.In MEMS device, silicon crystal surface has metal structure (as aluminum steel etc.) conventionally, the metal ion that high temperature easily brings out in these structures permeates, forms the physicochemical change such as metal-silicon reaction to silicon substrate, and the higher reaction of temperature is faster, seriously affect the performance of MEMS device.These problems that exist in high temperature bonding process have restricted the application breadth and depth of anode linkage in MEMS field.
To this, Chinese scholars adopts step-by-step processing bonding method to realize efficient cryogenic bonding.Be that plasma-activated or wet-chemical activating pretreatment is carried out at first para-linkage interface before bonding, then transfer to and on bonding position, carry out anode linkage, or on bonding station, apply strengthening magnetic field etc.But the expensive plasma apparatus that current plasma activation environmental condition is strict and need to be special, the process conditions of wet-chemical activation are strict, process is complicated, cause these activation methods to have the problem such as complex process, poor controllability, restricted the extensive use of interface activation composite anode bonding technology.Therefore the controllability of simplifying activating process process, raising technique is to close when front activating compound keys the new problem that process faces.
Therefore,, for above-mentioned technical problem, be necessary to provide a kind of combined type anode linkage system based on Multi-energy field coupling.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of combined type anode linkage system based on Multi-energy field coupling.
To achieve these goals, the technical scheme that the utility model embodiment provides is as follows:
Based on a combined type anode linkage system for Multi-energy field coupling, described system comprises:
Workbench, workbench comprises the first electrode and the second electrode that be arranged in parallel, the first electrode and the second electrode are respectively used to placing glass device and silicon device;
Power module, two ends are electrically connected with the first electrode and the second electrode respectively;
Electromagnetic induction heater, is arranged at the second electrode below, for electric discharge pretreatment and anode linkage are carried out to electromagnetism strengthening;
Drive unit, is connected on the first electrode, for driving the first electrode to move up and down.
As further improvement of the utility model, described drive unit drives the first electrode to lay respectively at primary importance and the second place, when the first electrode is positioned at primary importance, workbench, power module and electromagnetic induction heater form dielectric barrier discharge device, when the first electrode is positioned at the second place, workbench, power module and electromagnetic induction heater form anode linking device, and wherein in dielectric barrier discharge device, the first electrode and the second interelectrode distance are greater than the first electrode and the second interelectrode distance in anode linking device.
As further improvement of the utility model, in described dielectric barrier discharge device, glass devices and silicon device lay respectively on the first electrode and the second electrode, and the discharging gap between glass devices and silicon device is 10-5000 micron; In anode linking device, glass devices and silicon device lay respectively on the first electrode and the second electrode, and glass devices and silicon device interface are bonded to each other.
As further improvement of the utility model, in described electromagnetic induction heater, the power 0-5Kw of electromagnetic induction heating, frequency are 30-100Hz.
The utlity model has following beneficial effect:
Magnetic field-intensification interface particle motion supplementary means that the processing of plasma medium barrier discharge plasma interface activation, electromagnetic induction heating are formed, be compounded on a station with anode linkage technique, utilize plasma discharge activation processing to reduce bonding technology requirement, Particles Moving in magnetic field-intensification discharge process effect and the bonding process providing when utilizing electromagnetic induction heating that bonding temperature is provided, the final Multi-energy field coupling bonding that forms, realizes efficient cryogenic anode linkage;
The utility model is by increasing electromagnetic induction heater, can strengthen the bonding effect of pretreatment discharge effect, promotion anode linkage, simultaneously, electromagnetic induction heating, pretreatment electric discharge and the control of anode linkage three in one, parameter is easy to regulate, bonding performance controllability is good, and coordinated regulation is conducive to the raising of bonding quality.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the combined type anode linkage system of the utility model based on Multi-energy field coupling;
Fig. 2 is the process chart of combined type anode linkage method in the utility model one specific embodiment;
Fig. 3 a is the mounting structure schematic diagram of glass devices and silicon device in the utility model one specific embodiment;
Fig. 3 b is the plasma discharge schematic diagram of glass devices and silicon device in the utility model one specific embodiment;
Fig. 3 c is the anode linkage schematic diagram of glass devices and silicon device in the utility model one specific embodiment.
The specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all should belong to the scope of the utility model protection.
Shown in ginseng Fig. 1, a kind of combined type anode linkage system based on Multi-energy field coupling of the present utility model, comprising:
Workbench, workbench comprises that the first electrode 11 of be arrangeding in parallel and the second electrode 12, the first electrodes 11 and the second electrode 12 are respectively used to placing glass device and silicon device;
Drive unit drives the first electrode to lay respectively at primary importance and the second place, when the first electrode is positioned at primary importance, workbench, power module and electromagnetic induction heater form dielectric barrier discharge device, when the first electrode is positioned at the second place, workbench, power module and electromagnetic induction heater form anode linking device, and wherein in dielectric barrier discharge device, the first electrode and the second interelectrode distance are greater than the first electrode and the second interelectrode distance in anode linking device.
In the utility model medium discharge-blocking device, glass devices and silicon device lay respectively on the first electrode and electrode, and the discharging gap between glass devices and silicon device is 10-5000 micron (shown in ginseng Fig. 3 b); In anode linking device, glass devices and silicon device lay respectively on the first electrode and electrode, glass devices and silicon device interface (shown in ginseng Fig. 3 c) bonded to each other.
Correspondingly, the combined type anode linkage method of the utility model based on Multi-energy field coupling, comprises the following steps:
S1, workbench parameter, electromagnetic induction heating parameter, discharge parameter and bonding parameter are set;
S2, glass devices and silicon device are placed on respectively on first electrode and the second electrode of workbench;
S3, drive unit drive the first electrode, regulate the discharging gap between glass devices and silicon device;
S4, startup power module and electromagnetic induction heater, electromagnetic induction heater carries out electromagnetism strengthening, according to discharge parameter, glass devices and silicon device interface is carried out to plasma discharge pretreatment.Electric discharge pretreatment adopts dielectric barrier discharge device to carry out;
S5, drive unit drive the first electrode, make glass devices and silicon device interface bonded to each other;
S6, startup power module and electromagnetic induction heater, electromagnetic induction heater carries out electromagnetism strengthening, according to bonding parameter, glass devices and silicon device is carried out to anode linkage.
Further, the workbench parameter in step S1 comprises: the position relationship parameter between movement velocity, bonding position and the system initial point of platform.
Wherein, electromagnetic induction heater also can first start, as started before step S1 or in step S1 or in step S2.
Shown in ginseng Fig. 2-3, in a specific embodiment of the present utility model, the combined type anode linkage method of the utility model based on Multi-energy field coupling, comprises the following steps:
S1, workbench parameter, electromagnetic induction heating parameter, discharge parameter and bonding parameter are set.
Wherein, workbench parameter comprises: the position relationship parameter between movement velocity, bonding position and the system initial point of platform;
Electromagnetic induction heating parameter: power 0-5Kw, frequency 30-100Hz;
Discharge parameter: discharging gap 10-5000 micron, discharge voltage AC900-2000V, frequency 5-10KHz, discharge time 0.1-20s, discharge temp 15-350 ℃, discharge temp is made as room temperature under normal circumstances;
Bonding parameter: bonding voltage DC900-1200V, bonding time 50-2000s, bonding pressure 0.1-50g, bonding temperature 150-350 ℃.
S2, glass devices 50 and silicon device 60 are placed on respectively on first electrode 11 and the second electrode 12 of workbench, as shown in Figure 3 a.
S3, drive unit drive the first electrode 11, and regulating the discharging gap between glass devices 50 and silicon device 60 is 10-5000 micron.
S4, startup power module 20 and electromagnetic induction heater 30, carry out plasma discharge pretreatment according to discharge parameter to glass devices and silicon device interface, and electric discharge pretreatment adopts dielectric barrier discharge pretreatment, as shown in Figure 3 b.Electromagnetic induction heater is used for carrying out electromagnetism strengthening, promotes the motion of discharge process ionic medium, strengthening discharge performance.
S5, drive unit drive the first electrode 11, make glass devices 50 and silicon device 60 interfaces bonded to each other.
S6, startup power module 20 and electromagnetic induction heater 30, carry out anode linkage according to bonding parameter to glass devices 50 and silicon device 60, as shown in Figure 3 c.Electromagnetic induction heater is used for carrying out electromagnetism strengthening, promotes the Particles Moving in anodic bonding process, improves bonding efficiency.
Wherein, electromagnetism strengthening, electric discharge pretreatment, anode linkage are realized at same station, after bonding completes, close electromagnetic induction heater, and then workbench shifts out bonding position, pulls down and is bonded part.
Magnetic field-intensification interface particle motion supplementary means that the utility model forms conventional at present plasma medium barrier discharge plasma interface activation processing, electromagnetic induction heating, be compounded on a station with anode linkage technique, utilize plasma discharge activation processing to reduce bonding technology requirement, Particles Moving in magnetic field-intensification discharge process effect and the bonding process providing when utilizing electromagnetic induction heating that bonding temperature is provided, the final Multi-energy field coupling bonding that forms, realizes efficient cryogenic anode linkage.
Compared with prior art, the utility model is by increasing electromagnetic induction heater, can strengthen the bonding effect of pretreatment discharge effect, promotion anode linkage, simultaneously, electromagnetic induction heating, pretreatment electric discharge and the control of anode linkage three in one, parameter is easy to regulate, and bonding performance controllability is good, and coordinated regulation is conducive to the raising of bonding quality.
In sum, the utlity model has following advantage:
1, equipment overall structure is simple, is easy to integrated.Dielectric barrier discharge and anode linkage all utilize high voltage to dielectric effect, and different is that the former utilizes gap discharge, and the latter utilize be gap electrostatic force, two kinds of techniques all have good compatibility on space and realization condition.Electromagnetic induction heating can substitute the resistance heated of former anode linkage in heating process, and plasma motion and the migration of anodic bonding process median surface ion of magnetic field-intensification dielectric barrier discharge can be provided again.
The integrated control of 2, pretreatment, magnetic field-intensification and anode linkage parameter, regulation and control are simple, utilize the interface preprocess method of dielectric barrier discharge as anode linkage, without complicated plasma producing apparatus, controlled discharge voltage and discharging gap just can be controlled isoionic energy easily; Utilize electromagnetic induction heating technology as bonding heating means, can strengthen discharge performance, can promote again the Particles Moving in anodic bonding process.
3, do not need to shift, directly realize pretreatment, magnetic field-intensification and anode linkage on single station, whole bonding technology is easy to realize, and parameter is easy to regulate, and bonding performance controllability is good.
To those skilled in the art, obviously the utility model is not limited to the details of above-mentioned one exemplary embodiment, and in the situation that not deviating from spirit of the present utility model or essential characteristic, can realize the utility model with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present utility model is limited by claims rather than above-mentioned explanation, is therefore intended to all changes that drop in the implication and the scope that are equal to important document of claim to include in the utility model.Any Reference numeral in claim should be considered as limiting related claim.
In addition, be to be understood that, although this description is described according to embodiment, but be not that each embodiment only comprises an independently technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should make description as a whole, and the technical scheme in each embodiment also can, through appropriately combined, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (4)
1. the combined type anode linkage system based on Multi-energy field coupling, is characterized in that, described system comprises:
Workbench, workbench comprises the first electrode and the second electrode that be arranged in parallel, the first electrode and the second electrode are respectively used to placing glass device and silicon device;
Power module, two ends are electrically connected with the first electrode and the second electrode respectively;
Electromagnetic induction heater, is arranged at the second electrode below, for electric discharge pretreatment and anode linkage are carried out to electromagnetism strengthening;
Drive unit, is connected on the first electrode, for driving the first electrode to move up and down.
2. the combined type anode linkage system based on Multi-energy field coupling according to claim 1, it is characterized in that, described drive unit drives the first electrode to lay respectively at primary importance and the second place, when the first electrode is positioned at primary importance, workbench, power module and electromagnetic induction heater form dielectric barrier discharge device, when the first electrode is positioned at the second place, workbench, power module and electromagnetic induction heater form anode linking device, wherein in dielectric barrier discharge device, the first electrode and the second interelectrode distance are greater than the first electrode and the second interelectrode distance in anode linking device.
3. the combined type anode linkage system based on Multi-energy field coupling according to claim 2, it is characterized in that, in described dielectric barrier discharge device, glass devices and silicon device lay respectively on the first electrode and the second electrode, and the discharging gap between glass devices and silicon device is 10-5000 micron; In anode linking device, glass devices and silicon device lay respectively on the first electrode and the second electrode, and glass devices and silicon device interface are bonded to each other.
4. the combined type anode linkage system based on Multi-energy field coupling according to claim 1, is characterized in that, in described electromagnetic induction heater, the power 0-5Kw of electromagnetic induction heating, frequency are 30-100Hz.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320673604.3U CN203612946U (en) | 2013-10-29 | 2013-10-29 | Combined type anodic bonding system based on multi-energy-field coupling |
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| CN201320673604.3U CN203612946U (en) | 2013-10-29 | 2013-10-29 | Combined type anodic bonding system based on multi-energy-field coupling |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103523746A (en) * | 2013-10-29 | 2014-01-22 | 苏州大学 | Composite anodic bonding system and method based on multi-energy field coupling |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103523746A (en) * | 2013-10-29 | 2014-01-22 | 苏州大学 | Composite anodic bonding system and method based on multi-energy field coupling |
| CN103523746B (en) * | 2013-10-29 | 2016-09-28 | 苏州大学 | Combined type anode linkage system and method based on Multi-energy field coupling |
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Granted publication date: 20140528 Termination date: 20161029 |