CN108516519A - Magnetic control dielectric barrier discharge anode linkage system and method - Google Patents
Magnetic control dielectric barrier discharge anode linkage system and method Download PDFInfo
- Publication number
- CN108516519A CN108516519A CN201810627876.7A CN201810627876A CN108516519A CN 108516519 A CN108516519 A CN 108516519A CN 201810627876 A CN201810627876 A CN 201810627876A CN 108516519 A CN108516519 A CN 108516519A
- Authority
- CN
- China
- Prior art keywords
- electrode
- magnetic control
- anode linkage
- dielectric barrier
- barrier discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- 230000004888 barrier function Effects 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 239000002245 particle Substances 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 8
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 208000028659 discharge Diseases 0.000 description 53
- 230000008569 process Effects 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 12
- 238000001994 activation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000004913 activation Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000011221 initial treatment Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000018984 mastication Effects 0.000 description 1
- 238000010077 mastication Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma Technology (AREA)
Abstract
The present invention relates to a kind of magnetic control dielectric barrier discharge anode linkage system and method, which includes workbench, and workbench includes first electrode and second electrode disposed in parallel；Magnetic control module, magnetic control module generate the magnetic field of mechanical periodicity；Power module, power module are electrically connected with first electrode and second electrode；Heating device, heating device is for providing bonding required temperature；Driving device, driving device are connect with first electrode, and driving device driving first electrode moves up and down in the moving area of vertical direction.The relevant parameter of magnetic control dielectric barrier discharge anode linkage system is first arranged in this method, then first electrode is made to be located at first position by driving device, electric discharge pretreatment is carried out to glass devices and silicon device by magnetic control module again, first electrode is finally made to be located at the second position, carries out anode linkage.It strengthens magnetic control, pretreatment electric discharge and anode linkage three in oneization control, and ultimately forms Multi-energy field coupling bonding, realizes efficient cryogenic anode linkage.
Description
Technical field
The present invention relates to a kind of magnetic control dielectric barrier discharge anode linkage system and methods, belong to anode linkage technology neck
Domain.
Background technology
Anode linkage technology plays an important role in the links such as the making, assembling, encapsulation of MEMS device, is that linking is more
The core technology of kind silicon process technology is the basic of the complicated MEMS structure such as staggered structure, multilayered structure on realization three dimensions
One of means.Anode linkage is realized using the method for high temperature (400~600 DEG C) high voltage (1000~2000V) at present, base
Silicon chip and glass are connected on high voltage power supply the two poles of the earth by present principles, and bonded interface occurs under the action of certain temperature, voltage, pressure
Physical-chemical reaction promotes the chemical bond of the formation such as-OH ,-O ,-H ,-Si that folding variation occurs, and is re-formed on interface
Si-O-Si, Si-OH etc. new chemical bond, silicon and glass interface are securely attached to together.With other surfaces bonding techniques phase
Have that simple for process, para-linkage interface requirements are not high, bond strength is high, leakproofness and have good stability etc. excellent than, anode linkage
Point.Therefore sealing, the more demanding MEMS device of bond strength are assembled and encapsulation in, anode linkage is indispensable work
Skill means.
Current anodic bonding techniques utilize the microstructure layer of hot mastication glass interface, real under certain pressure effect
The wiggly slippage at the existing microcosmic peak of glass surface, promotes the combination interface of glass/silicon to reach the distance of electrostatic force, this is to realize
The key of anode linkage, therefore high temperature is the necessary condition for realizing this anode linkage.But high temperature make anode linkage be also easy to produce as
Lower problem：First, bonding efficiency is low.In the bonding process of silicon/glass, high temperature can make gas expansion in glass microporous, point
Solution is overflowed, and gas-bearing formation is formed in bonded interface.Discharge of gas is unsmooth will to form hole defect on interface.In order to keep gas suitable
Profit is discharged, at present widely used point electrode and multipoint electrode in Wafer level bonding.Using external electrical field when this kind of electrode in key
It closes and is unevenly distributed ground on interface, bonding together to form can only gradually promote from electrode position to edge.Full wafer bonding is all complete
At longer time (generally higher than 30min) is needed, bonding efficiency is low.Second, high temperature easily causes thermal stress and deformation.High temperature
Long duration of action easy tos produce thermal stress on silicon/glass bonding body, and MEMS device is caused to deform, and seriously affects MEMS device amount
The performance indicators such as fatigue durability, stability, reliability and the consistency of production.Third, high-temperature induction metal ion permeates.MEMS
Silicon crystal surface usually has metal structure (such as aluminum steel), high temperature to be easy to induce the metal ion in these structures to silicon in device
Matrix permeability forms the physicochemical changes such as metal-silicon reaction, and the higher reaction of temperature is faster, has severely impacted MEMS
The performance of device.These problems present in high temperature bonding process constrain anode linkage and apply range and depth in the fields MEMS
Degree.
In this regard, domestic and foreign scholars realize that efficient cryogenic is bonded using step-by-step processing bonding method.First to key before being bonded
It closes interface and carries out plasma-activated or wet-chemical activating pretreatment, be then transferred on bonding position and carry out anode linkage, or
Person applies on bonding station and strengthens magnetic field etc..But current plasma activation environmental condition is stringent and needs dedicated costliness etc.
Ion device, wet-chemical activation process conditions are stringent, process is complicated, cause these activation methods there are complex process, can
The problems such as control property is poor, constrains the extensive use of interface activation composite anode bonding technology.Therefore simplify activating process process, carry
The controllability of high technology is when front activating compound keys close the new problem that process faces.
Therefore, in view of the above technical problems, it is necessary to provide a kind of magnetic control dielectric barrier discharge anode linkage system and
Method.
Invention content
It is the purpose of the present invention is to provide a kind of magnetic control dielectric barrier discharge anode linkage system and method, magnetic control is strong
Change, pre-process electric discharge and the control of anode linkage three in oneization, ultimately forms Multi-energy field coupling bonding, realization efficient cryogenic anode
Bonding.
In order to achieve the above objectives, the present invention provides the following technical solutions：A kind of magnetic control dielectric barrier discharge anode linkage system
System, including：
Workbench, the workbench include first electrode and second electrode disposed in parallel；
Magnetic control module, the magnetic control module generates the magnetic field of mechanical periodicity, to promote the first electrode and second electrode
Between Particles Moving；
Power module, the power module are electrically connected with the first electrode and second electrode；
Heating device, the heating device is for providing bonding required temperature；
Driving device, the driving device are connect with the first electrode, and the driving device drives the first electrode
It is moved up and down in the moving area of vertical direction.
Further, the magnetic control module is arranged between the first electrode and second electrode, the magnetic control module packet
Include it is several be staggered into electromagnet.
Further, it is placed with glass devices in the first electrode, silicon device is placed in the second electrode.
Further, the moving area includes first position and the second position, and the first position is located at described second
The top of position.
Further, the first electrode is located at the first position, the workbench, power module, heating device, drive
Dynamic device and magnetic control module composition dielectric barrier discharge device, the discharging gap between the glass devices and silicon device are 10-
6000μm。
Further, the first electrode is located at the second position, the workbench, power module, heating device, drive
Dynamic device and magnetic control module composition anode linking device, the glass devices and silicon device fit.
The present invention also provides a kind of magnetic control dielectric barrier discharge anode linkage methods, are put using the magnetic control dielectric impedance
Electric anode linkage system, includes the following steps：
The relevant parameter of the magnetic control dielectric barrier discharge anode linkage system is set, is made by the driving device described
First electrode is located at the first position, then carries out pre- place of discharging to the glass devices and silicon device by the magnetic control module
Then reason makes the first electrode be located at the second position, carry out anode linkage.
Further, following steps are specifically included：
S1, setting workbench parameter, heating parameters, discharge parameter, bonding parameter, magnetic control modular power source parameter；
S2, the glass devices and silicon device are individually positioned in the first electrode and second electrode；
S3, the first electrode is driven by the driving device, so that the first electrode is located at the first position,
And the discharging gap between the glass devices and silicon device is 10-6000 μm；
S4, electromagnetism reinforcing is carried out by the magnetic control module, according to the discharge parameter to the glass devices and silicon device
Part interface carries out plasma discharge pretreatment；
S5, the first electrode is driven by the driving device, so that the first electrode is located at the second position,
And the glass devices and silicon device interface are bonded to each other；
S6, anode linkage is carried out to the glass devices and silicon device according to the bonding parameter.
Further, the workbench parameter includes the position between movement velocity, bonding position and the system origin of platform
Set Relation Parameters.
Compared with prior art, the beneficial effects of the present invention are：The magnetic control dielectric barrier discharge anode linkage of the present invention
The magnetic field that system and method forms the processing of plasma medium barrier discharge plasma interface activation, spherical magnetic control module is strong
Change interface particle movement supplementary means, be compounded on a station with anode linkage technique, is first passed through at plasma discharge activation
Reason reduces bonding technology requirement, and heating device is recycled to provide bonding temperature, and at the same time the magnetic field-intensification using magnetic control discharges
Particles Moving in treatment effect and bonding process ultimately forms Multi-energy field coupling bonding, realizes efficient cryogenic anode linkage.This
Invention also by increase magnetic control module, can strenuous primary treatment discharge effect, promote anode linkage bonding effect, meanwhile, magnetic
Control is strengthened, pretreatment electric discharge and the control of anode linkage three in oneization, parameter can easily be accommodated, and bonding performance controllability is good, collaboration
Regulation and control are conducive to the raising of bonding quality.
Therefore the magnetic control dielectric barrier discharge anode linkage system and method has the following advantages：
1. equipment overall structure is simple, it is easily integrated.Magnetic control module, be capable of providing magnetic field-intensification dielectric barrier discharge etc.
Gas ions move and anodic bonding process median surface Ion transfer.Dielectric barrier discharge and anode linkage all utilize high voltage to exhausted
Edge medium acts on, unlike the former utilize gap discharge, and it is gap electrostatic force that the latter, which utilizes, two kinds of techniques in space and
All there is good compatibility in realization condition；
2. the overall-in-one control schema of pretreatment, magnetic field-intensification and anode linkage parameter, regulation and control are simple, utilize dielectric barrier discharge
It is controlled between discharge voltage and electric discharge without complicated plasma producing apparatus as the interface preprocess method of anode linkage
Gap can easily control the energy of plasma；Using magnetic control module, discharge performance can be strengthened and promote anode linkage mistake
Particles Moving in journey；
3. need not shift, pretreatment, magnetic field-intensification and anode linkage are directly realized by single-station, entire bonding technology is easy
In realization, parameter can easily be accommodated, and bonding performance controllability is good.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, below with presently preferred embodiments of the present invention and after coordinating attached drawing to be described in detail such as.
Description of the drawings
Fig. 1 and Fig. 2 is the structural representation of magnetic control dielectric barrier discharge anode linkage system shown in one embodiment of the invention
Figure；
Fig. 3 is the structural schematic diagram of dielectric barrier discharge device shown in one embodiment of the invention；
Fig. 4 is the structural schematic diagram of anode linking device shown in one embodiment of the invention；
Fig. 5 is the process step figure of magnetic control dielectric barrier discharge anode linkage method shown in one embodiment of the invention.
Specific implementation mode
With reference to the accompanying drawings and examples, the specific implementation mode of the present invention is described in further detail.Implement below
Example is not limited to the scope of the present invention for illustrating the present invention.
Refer to Fig. 1 and Fig. 2, magnetic control dielectric barrier discharge anode linkage system shown in one embodiment of the invention, including：
Workbench 10, the workbench 10 include first electrode 11 disposed in parallel and second electrode 12, first electricity
Pole 11 and second electrode 12 are respectively intended to place glass devices 60 and silicon device 70；
The both ends of power module 20, the power module 20 electrically connect with the first electrode 11 and second electrode 12 respectively
It connects, the power module 20 is variable power supply module, can provide variable high voltage direct current and High Level AC Voltage；
Heating device 30, the heating device 30 is arranged in the lower section of the second electrode 12, for providing needed for bonding
Temperature；
Driving device 40, the driving device 40 are connect with the first electrode 11, and the driving device 40 drives described
First electrode 11 moves up and down in the moving area of vertical direction, wherein the moving area includes first position and is located at
The second position below the first position；
Magnetic control module 50, the magnetic control module 50 are arranged between the first electrode and 11 second electrodes 12 comprising
Several to being staggered into the electromagnet placed to stacking, entirety is spherical in shape, and the magnetic control module 50 passes through provides period letter to electromagnet
Number generate the magnetic field of mechanical periodicity.
Incorporated by reference to Fig. 3, when the first electrode 11 is located at the first position, the workbench 10, adds power module 20
Thermal 30, driving device 40 and magnetic control module 50 constitute dielectric barrier discharge device, the glass devices 60 and silicon device 70
Between discharging gap be 10-6000 μm.
Incorporated by reference to Fig. 4, when the first electrode 11 is located at the second position, the workbench 10, adds power module 20
Thermal 30, driving device 40 and magnetic control module 50 constitute anode linking device, 70 interface of the glass devices 60 and silicon device
It fits.
Incorporated by reference to Fig. 5, in the present embodiment, the method and step of the magnetic control dielectric barrier discharge anode linkage system includes：
The relevant parameter of the magnetic control dielectric barrier discharge anode linkage system is set, is made by the driving device described
First electrode is located at the first position, then is discharged the glass devices 60 and silicon device 70 by the magnetic control module
Then pretreatment makes the first electrode be located at the second position, carry out anode linkage.
Specially：
S1, setting workbench parameter, heating parameters, discharge parameter, bonding parameter, magnetic control modular power source parameter；
S2, the glass devices 60 and silicon device 70 are individually positioned in the first electrode 11 and second electrode 12；
S3, the first electrode 11 is driven by the driving device 40, so that the first electrode 11 is located at described the
One position, and the discharging gap between the glass devices 60 and silicon device 70 is 10-6000 μm；
S4, according to discharge parameter, using power module 20 and heating device 30 to 70 interface of glass devices 60 and silicon device
Carry out plasma discharge pretreatment, and by the magnetic control module 50 carry out electromagnetism reinforcing, with promote discharge process medium from
Discharge performance is strengthened in the movement of son；
S5, the first electrode is driven by the driving device 40, so that the first electrode 11 is located at described second
Position, and the glass devices 60 and 70 interface of silicon device are bonded to each other；
S6, according to the bonding parameter, using power module 20 and heating device 30 to the glass devices 60 and silicon device
Part 70 carries out anode linkage, and heating device 30 is used to carry out electromagnetism reinforcing, promotes the Particles Moving in anodic bonding process, to
Improve bonding efficiency.
Wherein, in step S1, the workbench parameter includes between movement velocity, bonding position and the system origin of platform
Position relationship parameter.Specifically, heating parameters：Temperature is adjustable 0-400 DEG C；Discharge parameter：10-6000 μm of discharging gap is put
Piezoelectric voltage AC 900-2000V, frequency 5-10KHz, discharge time 0.1-20s, 15-360 DEG C of discharge temp (generally room temperature)；
Bonding parameter：It is bonded voltage DC 900-1200V, bonding time 60-2000s, bonding pressure 0.1-60g, bonding temperature 160-
360℃；Magnetic control power parameter：Signal type sine wave, pulse signal etc., voltage 0-24V.Electromagnetism is strengthened, electric discharge pre-processes, sun
Pole is bonded in same station and realizes, after the completion of bonding, closes device, then workbench removes bonding position, removes and is bonded part.
Also, heating device 30 and magnetic control module 50 can also first start, such as before step S1 or in step S1 or in step S2
Start.
In conclusion the magnetic control dielectric barrier discharge anode linkage system and method for the present invention stops plasma medium
The magnetic field-intensification interface particle movement supplementary means and sun that the processing of discharge plasma interface activation, spherical magnetic control module are formed
Pole bonding technology is compounded on a station, and first passing through plasma discharge activation process reduces bonding technology requirement, recycles and adds
Thermal provides bonding temperature, and at the same time being transported using the particle in the magnetic field-intensification discharge treatment effect and bonding process of magnetic control
It is dynamic, Multi-energy field coupling bonding is ultimately formed, realizes efficient cryogenic anode linkage.The present invention, can also by increasing magnetic control module
Strenuous primary treatment discharge effect, the bonding effect for promoting anode linkage, meanwhile, magnetic control is strengthened, pretreatment is discharged and anode linkage
Three in oneization controls, and parameter can easily be accommodated, and bonding performance controllability is good, and coordinated regulation is conducive to the raising of bonding quality.
Therefore the magnetic control dielectric barrier discharge anode linkage system and method has the following advantages：
1. equipment overall structure is simple, it is easily integrated.Magnetic control module, be capable of providing magnetic field-intensification dielectric barrier discharge etc.
Gas ions move and anodic bonding process median surface Ion transfer.Dielectric barrier discharge and anode linkage all utilize high voltage to exhausted
Edge medium acts on, unlike the former utilize gap discharge, and it is gap electrostatic force that the latter, which utilizes, two kinds of techniques in space and
All there is good compatibility in realization condition；
2. the overall-in-one control schema of pretreatment, magnetic field-intensification and anode linkage parameter, regulation and control are simple, utilize dielectric barrier discharge
It is controlled between discharge voltage and electric discharge without complicated plasma producing apparatus as the interface preprocess method of anode linkage
Gap can easily control the energy of plasma；Using magnetic control module, discharge performance can be strengthened and promote anode linkage mistake
Particles Moving in journey；
3. need not shift, pretreatment, magnetic field-intensification and anode linkage are directly realized by single-station, entire bonding technology is easy
In realization, parameter can easily be accommodated, and bonding performance controllability is good.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
1. a kind of magnetic control dielectric barrier discharge anode linkage system, which is characterized in that including：
Workbench, the workbench include first electrode and second electrode disposed in parallel；
Magnetic control module, the magnetic control module generates the magnetic field of mechanical periodicity, to promote between the first electrode and second electrode
Particles Moving；
Power module, the power module are electrically connected with the first electrode and second electrode；
Heating device, the heating device is for providing bonding required temperature；
Driving device, the driving device are connect with the first electrode, and the driving device drives the first electrode perpendicular
Histogram to moving area in move up and down.
2. magnetic control dielectric barrier discharge anode linkage system as described in claim 1, which is characterized in that the magnetic control module is set
Set between the first electrode and second electrode, the magnetic control module include it is several be staggered into electromagnet.
3. magnetic control dielectric barrier discharge anode linkage system as described in claim 1, which is characterized in that in the first electrode
Glass devices are placed with, silicon device is placed in the second electrode.
4. magnetic control dielectric barrier discharge anode linkage system as claimed in claim 3, which is characterized in that the moving area packet
First position and the second position are included, the first position is located at the top of the second position.
5. magnetic control dielectric barrier discharge anode linkage system as claimed in claim 4, which is characterized in that the first electrode position
Discharging gap between the first position, the glass devices and silicon device is 10-6000 μm.
6. magnetic control dielectric barrier discharge anode linkage system as claimed in claim 4, which is characterized in that the first electrode position
In the second position, the glass devices and silicon device fit.
7. a kind of magnetic control dielectric barrier discharge anode linkage method, which is characterized in that using such as any one of claim 1 to 6
The magnetic control dielectric barrier discharge anode linkage system, includes the following steps：
The relevant parameter of the magnetic control dielectric barrier discharge anode linkage system is set, makes described first by the driving device
Electrode is located at the first position, then carries out electric discharge pretreatment to the glass devices and silicon device by the magnetic control module,
Then so that the first electrode is located at the second position, carry out anode linkage.
8. magnetic control dielectric barrier discharge anode linkage method as claimed in claim 7, which is characterized in that specifically include following step
Suddenly：
S1, setting workbench parameter, heating parameters, discharge parameter, bonding parameter, magnetic control modular power source parameter；
S2, the glass devices and silicon device are individually positioned in the first electrode and second electrode；
S3, the first electrode is driven by the driving device, so that the first electrode is located at the first position, and institute
It is 10-6000 μm to state the discharging gap between glass devices and silicon device；
S4, electromagnetism reinforcing is carried out by the magnetic control module, according to the discharge parameter to the glass devices and silicon device circle
Face carries out plasma discharge pretreatment；
S5, the first electrode is driven by the driving device, so that the first electrode is located at the second position, and institute
It states glass devices and silicon device interface is bonded to each other；
S6, anode linkage is carried out to the glass devices and silicon device according to the bonding parameter.
9. magnetic control dielectric barrier discharge anode linkage method as claimed in claim 8, which is characterized in that the workbench parameter
Movement velocity, bonding position including platform and the position relationship parameter between system origin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810627876.7A CN108516519A (en) | 2018-06-19 | 2018-06-19 | Magnetic control dielectric barrier discharge anode linkage system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810627876.7A CN108516519A (en) | 2018-06-19 | 2018-06-19 | Magnetic control dielectric barrier discharge anode linkage system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108516519A true CN108516519A (en) | 2018-09-11 |
Family
ID=63428401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810627876.7A Pending CN108516519A (en) | 2018-06-19 | 2018-06-19 | Magnetic control dielectric barrier discharge anode linkage system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108516519A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030226604A1 (en) * | 2002-05-16 | 2003-12-11 | Micronit Microfluidics B.V. | Method of fabrication of a microfluidic device |
| EP1394101A2 (en) * | 2002-08-27 | 2004-03-03 | Hahn-Schickard-Gesellschaft Für Angewandte Forschung E.V. | Method of selective bonding of wafers |
| CN1927408A (en) * | 2006-09-26 | 2007-03-14 | 西安交通大学 | Indoor air purification method by using medium for blocking off low-temperature plasma generated by discharge |
| US20090146227A1 (en) * | 2007-12-06 | 2009-06-11 | Oki Semiconductor Co., Ltd. | Capacitive sensor and manufacturing method therefor |
| CN201752624U (en) * | 2010-06-30 | 2011-03-02 | 华南理工大学 | Plasma cooperative air treatment device with magnetic field strengthening and dielectric barrier discharging |
| CN102659071A (en) * | 2012-05-16 | 2012-09-12 | 苏州大学 | Composite anodic bonding method |
| CN103523746A (en) * | 2013-10-29 | 2014-01-22 | 苏州大学 | Composite anodic bonding system and method based on multi-energy field coupling |
| CN105973217A (en) * | 2016-06-03 | 2016-09-28 | 中国工程物理研究院总体工程研究所 | Miniature nuclear magnetic resonance gyro air chamber |
| US20170081174A1 (en) * | 2015-09-22 | 2017-03-23 | Freescale Semiconductor, Inc. | Integrating diverse sensors in a single semiconductor device |
| CN208292656U (en) * | 2018-06-19 | 2018-12-28 | 苏州大学 | Magnetic control dielectric barrier discharge anode linkage system |
-
2018
- 2018-06-19 CN CN201810627876.7A patent/CN108516519A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030226604A1 (en) * | 2002-05-16 | 2003-12-11 | Micronit Microfluidics B.V. | Method of fabrication of a microfluidic device |
| EP1394101A2 (en) * | 2002-08-27 | 2004-03-03 | Hahn-Schickard-Gesellschaft Für Angewandte Forschung E.V. | Method of selective bonding of wafers |
| CN1927408A (en) * | 2006-09-26 | 2007-03-14 | 西安交通大学 | Indoor air purification method by using medium for blocking off low-temperature plasma generated by discharge |
| US20090146227A1 (en) * | 2007-12-06 | 2009-06-11 | Oki Semiconductor Co., Ltd. | Capacitive sensor and manufacturing method therefor |
| CN201752624U (en) * | 2010-06-30 | 2011-03-02 | 华南理工大学 | Plasma cooperative air treatment device with magnetic field strengthening and dielectric barrier discharging |
| CN102659071A (en) * | 2012-05-16 | 2012-09-12 | 苏州大学 | Composite anodic bonding method |
| CN103523746A (en) * | 2013-10-29 | 2014-01-22 | 苏州大学 | Composite anodic bonding system and method based on multi-energy field coupling |
| US20170081174A1 (en) * | 2015-09-22 | 2017-03-23 | Freescale Semiconductor, Inc. | Integrating diverse sensors in a single semiconductor device |
| CN105973217A (en) * | 2016-06-03 | 2016-09-28 | 中国工程物理研究院总体工程研究所 | Miniature nuclear magnetic resonance gyro air chamber |
| CN208292656U (en) * | 2018-06-19 | 2018-12-28 | 苏州大学 | Magnetic control dielectric barrier discharge anode linkage system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208292656U (en) | Magnetic control dielectric barrier discharge anode linkage system | |
| CN107369657A (en) | A kind of two-side radiation power model of multizone laid out in parallel | |
| CN109795201A (en) | Laminating apparatus and applying method | |
| CN107393901A (en) | A kind of two-side radiation power model of laminated base plate | |
| CN102659071B (en) | Composite anodic bonding method | |
| CN103145096B (en) | Low-temperature ultrasound anodic bonding method of silicon wafer and glass sheet | |
| CN108516519A (en) | Magnetic control dielectric barrier discharge anode linkage system and method | |
| CN107426908A (en) | A kind of low pressure large area, high-density plasma generation device and production method | |
| CN108383080A (en) | The composite anode bonding method of nano gap in-situ activation | |
| CN103523746B (en) | Combined type anode linkage system and method based on Multi-energy field coupling | |
| CN203612946U (en) | Combined type anodic bonding system based on multi-energy-field coupling | |
| CN105845762A (en) | Novel double-glass solar module and edge sealing method thereof | |
| CN104194021B (en) | The production method and its manufactured goods of the electrode isolation bar of solaode module | |
| CN103094416B (en) | A kind of photovoltaic module production technology | |
| CN112461882B (en) | Method for testing shape memory performance of surface microstructure | |
| CN207420830U (en) | Miniflow pumping configuration and system | |
| CN202617005U (en) | Power supply device for light high-strength metal material surface treatment | |
| CN102694453A (en) | Charge-discharge power generation, electricity saving and/or magnetism gathering type synchronous magnetic generator | |
| CN205951447U (en) | Dual glass assembly prevents excessive pressure frame | |
| CN106252665A (en) | Affluxion body in lithium ion batteries and surface spikes processing method thereof | |
| CN101457474A (en) | Low-temperature plasma electrical source for loomage surface modification and control method thereof | |
| CN201339139Y (en) | Low-temperature plasma power supply for modifying textile surface | |
| CN206783790U (en) | Differential arc oxidation synchronization auxiliary selenoid field device | |
| CN206322709U (en) | A kind of photovoltaic component lamination frock | |
| CN100377399C (en) | Hydrogen air fuel battery MEA microwave hot-press method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |