CN108383080A - The composite anode bonding method of nano gap in-situ activation - Google Patents
The composite anode bonding method of nano gap in-situ activation Download PDFInfo
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- CN108383080A CN108383080A CN201810183325.6A CN201810183325A CN108383080A CN 108383080 A CN108383080 A CN 108383080A CN 201810183325 A CN201810183325 A CN 201810183325A CN 108383080 A CN108383080 A CN 108383080A
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- bonding
- dielectric barrier
- barrier discharge
- power supply
- composite anode
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2266/00—Composition of foam
- B32B2266/04—Inorganic
- B32B2266/057—Silicon-containing material, e.g. glass
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention discloses a kind of composite anode bonding method of nano gap in-situ activation, including discharge activation process and anode linkage process, the specific steps of the composite anode bonding method include：Composite anode bonding parameter is set；Silicon chip and sheet glass are bonded to each other and overlayed on stationary work-table, forms nano gap being bonded interface, while applying set bonding pressure, and be heated to set bonding temperature；Apply dielectric barrier discharge voltage parameter, dielectric barrier discharge time parameter, dielectric barrier discharge frequency parameter, bonding voltage parameter and bonding time parameter, to obtain bonded layer.The present invention completes activation procedure first with the nano gap of anode linkage initial interface as dielectric barrier discharge gap, anode linkage process is done directly by Switching power again, realize the anode linkage of in-situ activation, at the same time, have adjusted corresponding dielectric barrier discharge parameter, bonding temperature is significantly reduced, low-temperature bonding is realized.
Description
Technical field
The invention belongs to MEMS and integrated antenna package technical field more particularly to a kind of composite anode bonding sides
Method.
Background technology
Anode linkage technology plays an important role in the links such as the making, assembling, encapsulation of MEMS device, is that linking is more
The core technology of kind silicon process technology is the basic of the complicated MEMS structure such as staggered structure, multilayered structure on realization three dimensions
One of means.Anode linkage is realized using the method for high temperature (400~500 DEG C) high voltage (1000~2000V) at present, base
Silicon chip and glass are connected on high voltage power supply the two poles of the earth by present principles, and bonded interface occurs under the action of certain temperature, voltage, pressure
Physical-chemical reaction promotes the chemical bond of the formation such as-OH ,-O ,-H ,-Si that folding variation occurs, and is re-formed on interface
Si-O-Si, Si-OH etc. new chemical bond, silicon and glass interface are securely attached to together.With other surfaces bonding techniques phase
Have that simple for process, para-linkage interface requirements are not high, bond strength is high, leakproofness and have good stability etc. excellent than, anode linkage
Point.Therefore sealing, the more demanding MEMS device of bond strength are assembled and encapsulation in, anode linkage is indispensable work
Skill means.
Current anodic bonding techniques utilize the microstructure layer of hot mastication glass interface, real under certain pressure effect
The wiggly slippage at the existing microcosmic peak of glass surface, promotes the combination interface of glass/silicon to reach the distance of electrostatic force, this is to realize
The key of anode linkage, therefore high temperature is the necessary condition for realizing this anode linkage.But high temperature make anode linkage be also easy to produce as
Lower problem：First, bonding efficiency is low.In the bonding process of silicon/glass, high temperature can make gas expansion in glass microporous, point
Solution is overflowed, and gas-bearing formation is formed in bonded interface.Discharge of gas is unsmooth will to form hole defect on interface.In order to keep gas suitable
Profit is discharged, at present widely used point electrode and multipoint electrode in Wafer level bonding.Using external electrical field when this kind of electrode in key
It closes and is unevenly distributed ground on interface, bonding together to form can only gradually promote from electrode position to edge.Full wafer bonding is all complete
At longer time (generally higher than 30min) is needed, bonding efficiency is low.Second, high temperature easily causes thermal stress and deformation.High temperature
Long duration of action easy tos produce thermal stress on silicon/glass bonding body, and MEMS device is caused to deform, and seriously affects MEMS device amount
The performance indicators such as fatigue durability, stability, reliability and the consistency of production.Third, high-temperature induction metal ion permeates.MEMS
Silicon crystal surface usually has metal structure (such as aluminum steel), high temperature to be easy to induce the metal ion in these structures to silicon in device
Matrix permeability forms the physicochemical changes such as metal-silicon reaction, and the higher reaction of temperature is faster, has severely impacted MEMS
The performance of device.These problems present in high temperature bonding process constrain anode linkage and apply range and depth in the fields MEMS
Degree.
In this regard, domestic and foreign scholars realize that efficient cryogenic is bonded using step-by-step processing bonding method.First to key before being bonded
It closes interface and carries out plasma-activated or wet-chemical activating pretreatment, be then transferred on bonding position and carry out anode linkage.But
Current plasma activation environmental condition is stringent and needs dedicated expensive plasma apparatus, the process conditions of wet-chemical activation tight
Lattice, process are complicated, and the problems such as causing these activation methods there are complex process, poor controllabilities, it is compound to constrain interface activation
The extensive use of anode linkage technique.Therefore it is current composite anode key to simplify activating process process, improve the controllability of technique
Close the new problem that process faces.
Invention content
In view of the above problems of the prior art, the purpose of the present invention is to provide a kind of nano gap in-situ activations
Composite anode bonding method, be bonded interface formed nano gap, to realize the low-temperature bonding of in-situ activation.
In order to achieve the above objectives, the present invention provides the following technical solutions：A kind of composite anode of nano gap in-situ activation
Bonding method, including discharge activation process and anode linkage process, discharge activation process are dielectric barrier plasma discharge
Interface activation process, dielectric barrier plasma discharge interface activation process are integrated in anode linkage process on same station,
The specific steps of composite anode bonding method include：
S1, setting composite anode bonding parameter, composite anode bonding parameter include bonding temperature, bonding pressure, bonding electricity
Pressure, bonding time, dielectric barrier discharge voltage, dielectric barrier discharge time, dielectric barrier discharge frequency；
S2, silicon chip and sheet glass are bonded to each other stack on the table, be bonded interface formed nano gap, simultaneously
Set bonding pressure is applied to the interface being bonded, and the workbench is heated to set bonding temperature；
Dielectric barrier discharge voltage, dielectric barrier discharge time set by S3, application and dielectric barrier discharge frequency
Parameter is completed to the discharge activation process for being bonded interface；
Bonding voltage, bonding time parameter set by S4, application complete the anode linkage process to being bonded interface,
Obtain bonded layer.
Further, in above-mentioned composite anode bonding method, set bonding temperature parameter area is 150-350
℃。
Further, in above-mentioned composite anode bonding method, set bonding pressure parameter area is 0.1-50g/
mm2.By adjusting bonding pressure, bonded interface is promoted to reach the distance of electrostatic force, to complete subsequent process.
Further, in above-mentioned composite anode bonding method, bonding voltage parameter range is DC900-1200V；Bonding
Time parameter ranging from 50-2000s.
Further, in above-mentioned composite anode bonding method, dielectric barrier discharge voltage parameter range is AC100-
2000V；Dielectric barrier discharge frequency parameter ranging from 5-100KHz；Dielectric barrier discharge time parameter ranging from 0.1-500s.
The present invention also provides a kind of combined type anode linking devices, are used for above-mentioned composite anode bonding method, the device
Including dielectric barrier discharge power supply, bonding power supply, electrode and power supply switching control unit, the dielectric barrier discharge power supply
It is connected respectively with the electrode by the power supply switching control unit with power supply is bonded.
Further, electrode is made of top electrode and lower electrode, and top electrode is hindered by power supply switching control unit and medium
Keep off discharge power supply or be bonded the cathode of power supply and be connected, lower electrode by power supply switching control unit and dielectric barrier discharge power supply or
The anode for being bonded power supply is connected.
Further, dielectric barrier discharge power supply is equipped with dielectric barrier discharge parameter control system, described to control
Dielectric barrier discharge voltage, dielectric barrier discharge time, dielectric barrier discharge frequency.
Further, bonding power supply is equipped with bonding parameter control system, when controlling the bonding voltage, bonding
Between.
Further, composite anode bonding apparatus further includes bonding temperature and bonding pressure control system, bonding temperature with
Bonding pressure set-up of control system on the table, is made of bonding temperature controller and bonding pressure controller, to control
Bonding temperature and bonding pressure.
The beneficial effects of the present invention are：The present invention carries out medium using the nano gap for being bonded interface in anode linkage
Then the activation procedure of barrier discharge is done directly anode linkage process by Switching power, realize the low temperature of in-situ activation
Bonding.Meanwhile two kinds of processes being integrated on same station, the complexity of integral device is simplified, keeps its structure simpler, is dropped
Low production cost, improves economic benefit；Secondly, by it is integrated, it can be achieved that two kinds of processes bonding voltage parameter, bonding when
Between parameter, dielectric barrier discharge voltage parameter, dielectric barrier discharge time parameter, the unified of dielectric barrier discharge frequency parameter are adjusted
Control, more convenient operation, process controllability are more preferable；In addition, using the same nano gap for being bonded interface, successively complete activation with
Bond sequence is bonded the discharging gap of part and is bonded gap, simplifies operating procedure, reduce by operating without resetting
Quality problems caused by error, improve yield rate.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, below with presently preferred embodiments of the present invention and after coordinating attached drawing to be described in detail such as.
Description of the drawings
Fig. 1 is the process flow chart of composite anode bonding method of the present invention.
Fig. 2 is the schematic diagram of discharge activation process in composite anode bonding method of the present invention；
Wherein, 01- electrodes, 02- sheet glass, 03- nano gaps, 04- silicon chips, 05- bonding temperatures controller, 06- media
Barrier discharge power supply, 07- bonding pressure controllers.
Fig. 3 is that the present invention is based on the schematic diagrames of the combined type anode linking device of in-situ activation.
Wherein, electrode, 08- bondings power supply, 09- power supply switching control units under 011- top electrodes, 012-.
Specific implementation mode
With reference to the accompanying drawings and examples, the specific implementation mode of the present invention is described in further detail.Implement below
Example is not limited to the scope of the present invention for illustrating the present invention.
Referring to Fig. 1, the composite anode bonding method of the nano gap in-situ activation of the present invention, including discharge activation process
And anode linkage process, discharge activation process be dielectric barrier plasma discharge interface activation process, dielectric impedance etc. from
Daughter discharge interface activation procedure is integrated in anode linkage process on same station, the specific steps of composite anode bonding method
Including：
S1, setting composite anode bonding parameter, composite anode bonding parameter include bonding temperature, bonding pressure, bonding electricity
Pressure, bonding time, dielectric barrier discharge voltage, dielectric barrier discharge time, dielectric barrier discharge frequency；
S2, silicon chip and sheet glass are bonded to each other stack on the table, be bonded interface formed nano gap, simultaneously
Set bonding pressure is applied to the interface being bonded, and the workbench is heated to set bonding temperature；
Dielectric barrier discharge voltage, dielectric barrier discharge time set by S3, application and dielectric barrier discharge frequency
Parameter is completed to the discharge activation process for being bonded interface；
Bonding voltage, bonding time parameter set by S4, application complete the anode linkage process to being bonded interface,
Obtain bonded layer.
In the above-described embodiments, set bonding temperature parameter area is 150-350 DEG C.
In the above-described embodiments, set bonding pressure parameter area is 0.1-50g/mm2.Pass through adjusting key combined pressure
Power promotes bonded interface to reach the distance of electrostatic force, to complete subsequent process.
In the above-described embodiments, bonding voltage parameter range is DC900-1200V；Bonding time parameter area is 50-
2000s。
In the above-described embodiments, dielectric barrier discharge voltage parameter range is AC100-2000V；Dielectric barrier discharge frequency
Parameter area is 5-100KHz；Dielectric barrier discharge time parameter ranging from 0.1-500s.
Fig. 2 and Fig. 3 are please referred to, combined type anode linking device of the invention includes dielectric barrier discharge power supply 06, bonding
Power supply 08, electrode 01, power supply switching control unit 09, wherein dielectric barrier discharge power supply 06 pass through electricity respectively with power supply 08 is bonded
Source switching control unit 09 is connected with electrode 01, and the present apparatus further includes bonding temperature and bonding pressure control system, bonding temperature
On the table with bonding pressure set-up of control system, it is made of, uses bonding temperature controller 05 and bonding pressure controller 07
To control bonding pressure and bonding temperature.Silicon chip 04 and sheet glass 02, which are bonded to each other, to be overlayed bonding temperature controller 05 and is bonded
Between pressure controller 07, silicon chip 04 is bonded interface self-assembling formation nano gap 03 with sheet glass 02.Combined type anode key
It attaches together the electrode 01 set to be made of top electrode 011 and lower electrode 012, top electrode 011 passes through power supply switching control unit 09 and Jie
Matter barrier discharge power supply 06 or the cathode for being bonded power supply 08 are connected, and lower electrode 012 passes through power supply switching control unit 09 and medium
Barrier discharge power supply 06 or the anode for being bonded power supply 08 are connected.Dielectric barrier discharge power supply 06 is equipped with dielectric barrier discharge parameter
Control system is bonded power supply to control dielectric barrier discharge voltage, dielectric barrier discharge time, dielectric barrier discharge frequency
Upper 09 is equipped with bonding parameter control system, to control bonding voltage, bonding time.
The above method is specially：First, composite anode bonding parameter is respectively set：It is arranged on bonding temperature controller 05
It is 150-350 DEG C to be bonded heating temperature parameter, and it is 0.1-50g/ that bonding pressure parameter is arranged on bonding pressure controller 07
Mm2,08 setting bonding voltage parameter is DC900-1200V on bonding power supply, and setting bonding time parameter is 50-2000s,
It is AC100-2000V that dielectric barrier discharge voltage parameter, which is arranged, in dielectric barrier discharge power supply 06, and dielectric barrier discharge frequency is arranged
Parameter is 5-100KHz, and setting dielectric barrier discharge time parameter is 0.1-500s；Secondly, silicon chip 04 and sheet glass 02 is mutual
Fitting stacks between temperature controller 05 on the table and pressure controller 07, and silicon chip 04 is bonded boundary with sheet glass 02
Face self-assembling formation nano gap 03, while the interface to being bonded applies set bonding pressure parameter, and workbench is added
Heat is to set bonding temperature；Then, open dielectric barrier discharge power supply 06, AC100-2000V discharge voltage and
Under the action of the discharge frequency of 5-100KHz, plasma discharge is generated in nano gap 03,0.1- is carried out to being bonded interface
The activation process of 500s；Later, switching bonding power supply 08, under the action of the bonding voltage of DC900-1200V, to being bonded boundary
Face carries out the anode linkage processing of 50-2000s, obtains bonded layer.Workbench in the present embodiment is stationary work-table.
The bonded layer being prepared via above-described embodiment is compared with the bonded layer that prior art preparation obtains, and is obtained
Following table：
| Parameter | The prior art | The present invention |
| Temperature | 350-500℃ | 150-350℃ |
| Pressure | 0.1-50g/mm2 | 0.1-50g/mm2 |
| Dielectric barrier discharge voltage | AC100-2000V | AC100-2000V |
| Dielectric barrier discharge frequency | 5-100KHz | 5-100KHz |
| The dielectric barrier discharge time | 0.1-500s | 0.1-500s |
| It is bonded voltage | DC900-1200V | DC900-1200V |
| Bonding time | 50-2000s | 50-2000s |
| Bond strength | 2-15MPa | 3-30MPa |
According to upper table content it is found that the present invention by nano gap carry out dielectric barrier plasma discharge process come
Activation be bonded interface, then by switching be bonded power supply complete anodic bonding process in situ, obtained bonded layer with it is existing
The bonded layer being prepared in technology, bond strength improve 50-100%, realize efficient bonding reaction.
When silicon chip clamping is on stationary work-table, then vitreum is clamped on movable stage, on the contrary, when glass is clamped
When on stationary work-table, then silicon chip clamping is controlled by mobile work platform on movable stage so that silicon chip and sheet glass
Between formed nanoscale gap (1-999nm), also can reach the technique effect of above-described embodiment, no longer repeat herein.
The present invention carries out the activation procedure of dielectric barrier discharge using the nano gap for being bonded interface in anode linkage, so
Switching power is done directly anode linkage process afterwards, realizes the low-temperature bonding of in-situ activation.Meanwhile two kinds of processes being integrated in
On same station, the complexity of integral device is simplified, keeps its structure simpler, reduces production cost, improves economic effect
Benefit；Secondly, by integrated, it can be achieved that the unification of the process parameter of two kinds of processes regulates and controls, more convenient operation, process controllability is more
It is good；In addition, using the same nano gap for being bonded interface, activation and bond sequence are successively completed, without resetting by key
The discharging gap of component be bonded gap, simplify operating procedure, reduce the quality problems caused by operating error, improve
Yield rate.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of composite anode bonding method of nano gap in-situ activation, including discharge activation process and anode linkage work
Sequence, it is characterised in that：The discharge activation process is dielectric barrier plasma discharge interface activation process, the dielectric impedance
Plasma discharge interface activation process is integrated in anode linkage process on same station, the composite anode bonding method
Specific steps include：
S1, setting composite anode bonding parameter, the composite anode bonding parameter include bonding temperature, bonding pressure, bonding electricity
Pressure, bonding time, dielectric barrier discharge voltage, dielectric barrier discharge time, dielectric barrier discharge frequency；
S2, it silicon chip and sheet glass is bonded to each other stacks on the table, nano gap is formed being bonded interface, while to institute
It states the interface being bonded and applies the bonding pressure, and the workbench is heated to the bonding temperature；
S3, apply the dielectric barrier discharge voltage, dielectric barrier discharge time and dielectric barrier discharge frequency parameter, it is complete
The discharge activation process for being bonded interface in pairs；
S4, apply the bonding voltage, bonding time parameter, complete to the anode linkage process for being bonded interface.
2. composite anode bonding method according to claim 1, which is characterized in that the ranging from 150- of the bonding temperature
350℃。
3. composite anode bonding method according to claim 1, which is characterized in that the ranging from 0.1- of the bonding pressure
50g/mm2。
4. composite anode bonding method according to claim 1, which is characterized in that the bonding voltage is ranging from
DC900-1200V；The ranging from 50-2000s of the bonding time.
5. composite anode bonding method according to claim 1, which is characterized in that the model of the dielectric barrier discharge voltage
It encloses for AC100-2000V；The ranging from 5-100KHz of the dielectric barrier discharge frequency；The model of the dielectric barrier discharge time
It encloses for 0.1-500s.
6. a kind of composite anode bonding apparatus is used for claim 1-5 any one of them composite anode bonding methods, feature
It is, including dielectric barrier discharge power supply, bonding power supply, electrode and power supply switching control unit, the dielectric barrier discharge
Power supply be bonded power supply and be connected respectively with the electrode by the power supply switching control unit.
7. composite anode bonding apparatus according to claim 6, which is characterized in that the electrode is by top electrode and lower electrode
It constitutes, the top electrode with the dielectric barrier discharge power supply or is bonded the cathode of power supply by the power supply switching control unit
It is connected, the lower electrode with the dielectric barrier discharge power supply or is bonded the anode of power supply by the power supply switching control unit
It is connected.
8. composite anode bonding apparatus according to claim 6, which is characterized in that set on the dielectric barrier discharge power supply
There is dielectric barrier discharge parameter control system, to control the dielectric barrier discharge voltage, dielectric barrier discharge time, medium
Barrier discharge frequency.
9. composite anode bonding apparatus according to claim 6, which is characterized in that the bonding power supply, which is equipped with bonding, joins
Number control system, to control the bonding voltage, bonding time.
10. composite anode bonding apparatus according to claim 6, which is characterized in that the composite anode bonding apparatus is also
Including bonding temperature and bonding pressure control system, the bonding temperature is with bonding pressure set-up of control system in the workbench
On, it is made of bonding temperature controller and bonding pressure controller, to control the bonding pressure and bonding temperature.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810183325.6A CN108383080B (en) | 2018-03-06 | 2018-03-06 | Composite anodic bonding method for in-situ activation of nano-gap |
| PCT/CN2018/085545 WO2019169728A1 (en) | 2018-03-06 | 2018-05-04 | Nano-gap in-situ activation-based composite anodic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810183325.6A CN108383080B (en) | 2018-03-06 | 2018-03-06 | Composite anodic bonding method for in-situ activation of nano-gap |
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| Publication Number | Publication Date |
|---|---|
| CN108383080A true CN108383080A (en) | 2018-08-10 |
| CN108383080B CN108383080B (en) | 2020-04-10 |
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| CN201810183325.6A Active CN108383080B (en) | 2018-03-06 | 2018-03-06 | Composite anodic bonding method for in-situ activation of nano-gap |
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| WO (1) | WO2019169728A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019169728A1 (en) * | 2018-03-06 | 2019-09-12 | 苏州大学张家港工业技术研究院 | Nano-gap in-situ activation-based composite anodic bonding method |
| CN111217326A (en) * | 2020-01-09 | 2020-06-02 | 太原科技大学 | Low-temperature anodic bonding method for polymer elastomer and metal sheet |
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| CN107352503A (en) * | 2016-05-09 | 2017-11-17 | 江苏英特神斯科技有限公司 | The anode linkage method and its application of polycrystalline silicon medium and glass on a kind of silicon substrate insulating barrier |
| CN108383080B (en) * | 2018-03-06 | 2020-04-10 | 苏州大学 | Composite anodic bonding method for in-situ activation of nano-gap |
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- 2018-05-04 WO PCT/CN2018/085545 patent/WO2019169728A1/en active Application Filing
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| CN102659071A (en) * | 2012-05-16 | 2012-09-12 | 苏州大学 | Composite anodic bonding method |
| CN103145096A (en) * | 2013-03-27 | 2013-06-12 | 山东理工大学 | Low-temperature ultrasound anodic bonding method of silicon wafer and glass sheet |
| CN106365114A (en) * | 2015-07-22 | 2017-02-01 | 苏州美图半导体技术有限公司 | Low-temperature hot-pressing bonding method |
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| WO2019169728A1 (en) * | 2018-03-06 | 2019-09-12 | 苏州大学张家港工业技术研究院 | Nano-gap in-situ activation-based composite anodic bonding method |
| CN111217326A (en) * | 2020-01-09 | 2020-06-02 | 太原科技大学 | Low-temperature anodic bonding method for polymer elastomer and metal sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019169728A1 (en) | 2019-09-12 |
| CN108383080B (en) | 2020-04-10 |
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