CN108383080B - Composite anodic bonding method for in-situ activation of nano-gap - Google Patents
Composite anodic bonding method for in-situ activation of nano-gap Download PDFInfo
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- CN108383080B CN108383080B CN201810183325.6A CN201810183325A CN108383080B CN 108383080 B CN108383080 B CN 108383080B CN 201810183325 A CN201810183325 A CN 201810183325A CN 108383080 B CN108383080 B CN 108383080B
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2266/00—Composition of foam
- B32B2266/04—Inorganic
- B32B2266/057—Silicon-containing material, e.g. glass
Abstract
The invention discloses a composite anodic bonding method for in-situ activation of a nanometer gap, which comprises a discharge activation process and an anodic bonding process, and the composite anodic bonding method comprises the following specific steps: setting composite anode bonding parameters; mutually attaching and stacking a silicon chip and a glass chip on a fixed workbench, forming a nano gap on a bonded interface, applying a set bonding pressure, and heating to a set bonding temperature; and applying the dielectric barrier discharge voltage parameter, the dielectric barrier discharge time parameter, the dielectric barrier discharge frequency parameter, the bonding voltage parameter and the bonding time parameter to obtain the bonding layer. According to the invention, the activation process is completed by taking the nano-gap of the anodic bonding initial interface as the dielectric barrier discharge gap, and then the anodic bonding process is directly completed by switching the power supply, so that the in-situ activated anodic bonding is realized, meanwhile, the corresponding dielectric barrier discharge parameters are adjusted, the bonding temperature is obviously reduced, and the low-temperature bonding is realized.
Description
Technical Field
The invention belongs to the technical field of micro-electromechanical systems and integrated circuit packaging, and particularly relates to a composite anodic bonding method.
Background
The anodic bonding technology has an important role in the links of manufacturing, assembling, packaging and the like of MEMS devices, is a core technology for linking various silicon processing technologies, and is one of basic means for realizing complex MEMS structures such as cross structures and multilayer structures in three-dimensional space. The existing anodic bonding is realized by a method of increasing voltage (1000-2000V) at high temperature (400-500 ℃), and the basic principle is that a silicon chip and glass are connected to two electrodes of a high-voltage power supply, a bonding interface generates a physical and chemical reaction under the action of certain temperature, voltage and pressure, so that chemical bonds formed by-OH, -O, -H, -Si and the like are promoted to generate opening and closing changes, new chemical bonds formed by Si-O-Si, Si-OH and the like are formed on the interface again, and the silicon and the glass interface are firmly connected together. Compared with other surface bonding technologies, anodic bonding has the advantages of simple process, low requirement on a bonding interface, high bonding strength, good sealing performance and stability and the like. Therefore, anodic bonding is an indispensable process means in the assembly and packaging of MEMS devices requiring high sealing and bonding strength.
The current high-temperature anodic bonding technology utilizes a microscopic layer of a high-temperature softened glass interface to realize the peristaltic slippage of a microscopic peak on the surface of the glass under the action of certain pressure, and promotes the glass/silicon combined interface to reach the distance of the action of electrostatic force, which is the key for realizing anodic bonding, so that the high temperature is a necessary condition for realizing the anodic bonding. However, the high temperature makes anodic bonding prone to the following problems: first, the bonding efficiency is low. During the bonding process of silicon/glass, the gas in the micropores of the glass expands, decomposes and overflows due to high temperature, and a gas layer is formed at the bonding interface. The lack of gas venting can result in void defects at the interface. In order to smoothly discharge gas, a spot electrode and a multi-spot electrode are widely used in wafer-level bonding. With such electrodes the distribution of the external electric field at the bonding interface is non-uniform and bond formation can only progress gradually from the electrode location towards the edge. The whole piece bonding needs longer time (generally more than 30min) to be completely finished, and the bonding efficiency is low. Second, high temperatures tend to cause thermal stress and deformation. The high temperature acts on the silicon/glass bonding body for a long time, so that thermal stress is easily generated, the MEMS device is deformed, and the performance indexes of fatigue resistance, stability, reliability, consistency and the like of mass production of the MEMS device are seriously influenced. Thirdly, high temperature induces metal ion penetration. The surface of a silicon crystal in a MEMS device usually has metal structures (such as aluminum wires, etc.), and high temperature easily induces physicochemical changes such as metal ions in these structures permeating into a silicon substrate and forming metal-silicon reaction, and the higher the temperature is, the faster the reaction is, and the performance of the MEMS device is seriously affected. These problems in the high temperature bonding process limit the extent and depth of application of anodic bonding in the MEMS field.
In contrast, domestic and foreign scholars adopt a step-by-step bonding method to realize low-temperature efficient bonding. The bonding interface is pretreated by plasma activation or wet chemical activation before bonding, and then transferred to a bonding position for anodic bonding. However, the current plasma activation environmental conditions are strict and require special expensive plasma equipment, and the wet chemical activation process conditions are strict and the process is complex, so that the problems of complex process, poor controllability and the like of the activation methods are caused, and the wide application of the interface activation composite anodic bonding process is restricted. Therefore, simplifying the activation process and improving the process controllability are new problems faced by the current composite anodic bonding process.
Disclosure of Invention
In view of the problems in the prior art, it is an object of the present invention to provide a composite anodic bonding method with in-situ nanogap activation, in which a nanogap is formed at a bonded interface to realize in-situ activated low-temperature bonding.
In order to achieve the purpose, the invention provides the following technical scheme: a composite anodic bonding method for in-situ activation of a nanometer gap comprises a discharge activation process and an anodic bonding process, wherein the discharge activation process is a dielectric barrier plasma discharge interface activation process, the dielectric barrier plasma discharge interface activation process and the anodic bonding process are integrated on the same station, and the composite anodic bonding method comprises the following specific steps:
s1, setting composite anodic bonding parameters, wherein the composite anodic bonding parameters comprise bonding temperature, bonding pressure, bonding voltage, bonding time, dielectric barrier discharge voltage, dielectric barrier discharge time and dielectric barrier discharge frequency;
s2, mutually attaching and stacking the silicon chip and the glass chip on a workbench, forming a nanometer gap on a bonded interface, applying a set bonding pressure to the bonded interface, and heating the workbench to a set bonding temperature;
s3, applying the set dielectric barrier discharge voltage, dielectric barrier discharge time and dielectric barrier discharge frequency parameters to complete the discharge activation process of the bonded interface;
and S4, applying the set bonding voltage and bonding time parameters to complete the anodic bonding process of the bonded interface and obtain the bonding layer.
Further, in the composite anodic bonding method, the bonding temperature parameter range is set to be 150-350 ℃.
Furthermore, in the composite anodic bonding method, the set bonding pressure parameter range is 0.1-50g/mm2. And (4) promoting the bonding interface to reach the distance acted by the electrostatic force by adjusting the bonding pressure so as to complete the subsequent process.
Further, in the composite anodic bonding method, the bonding voltage parameter range is DC 900-1200V; the bonding time parameter ranges from 50 to 2000 s.
Further, in the composite anodic bonding method, the dielectric barrier discharge voltage parameter range is AC 100-2000V; the dielectric barrier discharge frequency parameter range is 5-100 KHz; the dielectric barrier discharge time parameter range is 0.1-500 s.
The invention also provides a composite anodic bonding device, which is used for the composite anodic bonding method and comprises a dielectric barrier discharge power supply, a bonding power supply, an electrode and a power supply switching control mechanism, wherein the dielectric barrier discharge power supply and the bonding power supply are respectively connected with the electrode through the power supply switching control mechanism.
Furthermore, the electrode is composed of an upper electrode and a lower electrode, the upper electrode is connected with the cathode of the dielectric barrier discharge power supply or the bonding power supply through the power supply switching control mechanism, and the lower electrode is connected with the anode of the dielectric barrier discharge power supply or the bonding power supply through the power supply switching control mechanism.
Further, a dielectric barrier discharge parameter control system is arranged on the dielectric barrier discharge power supply and used for controlling the dielectric barrier discharge voltage, the dielectric barrier discharge time and the dielectric barrier discharge frequency.
Furthermore, a bonding parameter control system is arranged on the bonding power supply and used for controlling the bonding voltage and the bonding time.
Furthermore, the composite anode bonding device also comprises a bonding temperature and bonding pressure control system, wherein the bonding temperature and bonding pressure control system is arranged on the workbench and consists of a bonding temperature controller and a bonding pressure controller and is used for controlling the bonding temperature and the bonding pressure.
The invention has the beneficial effects that: the invention utilizes the nanometer gap of the bonded interface in anodic bonding to carry out the activation process of dielectric barrier discharge, and then directly completes the anodic bonding process by switching the power supply, thereby realizing the low-temperature bonding of in-situ activation. Meanwhile, the two processes are integrated on the same station, so that the complexity of the whole equipment is simplified, the structure is simpler, the production cost is reduced, and the economic benefit is improved; secondly, through integration, the bonding voltage parameter and the bonding time parameter of the two processes, the dielectric barrier discharge voltage parameter, the dielectric barrier discharge time parameter and the dielectric barrier discharge frequency parameter can be uniformly regulated and controlled, the operation is more convenient, and the process controllability is better; in addition, the activation and bonding processes are successively completed by utilizing the nanometer gap of the same bonded interface, the discharge gap and the bonding gap of the bonded part do not need to be reset, the operation steps are simplified, the quality problem caused by operation errors is reduced, and the yield is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a process flow diagram of the composite anodic bonding method of the present invention.
FIG. 2 is a schematic diagram of a discharge activation process in the composite anodic bonding method of the present invention;
wherein, 01-electrode, 02-glass sheet, 03-nanometer gap, 04-silicon sheet, 05-bonding temperature controller, 06-dielectric barrier discharge power supply, and 07-bonding pressure controller.
Fig. 3 is a schematic diagram of the composite anodic bonding apparatus based on in-situ activation according to the present invention.
The device comprises 011-upper electrodes, 012-lower electrodes, 08-bonding power supplies and 09-power supply switching control mechanisms.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Referring to fig. 1, the composite anodic bonding method for in-situ activation of a nanogap according to the present invention includes a discharge activation process and an anodic bonding process, the discharge activation process is a dielectric barrier plasma discharge interface activation process, the dielectric barrier plasma discharge interface activation process and the anodic bonding process are integrated on the same station, and the composite anodic bonding method specifically includes the steps of:
s1, setting composite anodic bonding parameters, wherein the composite anodic bonding parameters comprise bonding temperature, bonding pressure, bonding voltage, bonding time, dielectric barrier discharge voltage, dielectric barrier discharge time and dielectric barrier discharge frequency;
s2, mutually attaching and stacking the silicon chip and the glass chip on a workbench, forming a nanometer gap on a bonded interface, applying a set bonding pressure to the bonded interface, and heating the workbench to a set bonding temperature;
s3, applying the set dielectric barrier discharge voltage, dielectric barrier discharge time and dielectric barrier discharge frequency parameters to complete the discharge activation process of the bonded interface;
and S4, applying the set bonding voltage and bonding time parameters to complete the anodic bonding process of the bonded interface and obtain the bonding layer.
In the above embodiment, the bonding temperature parameter is set within the range of 150-350 ℃.
In the above examples, the bonding pressure parameter was set in the range of 0.1 to 50g/mm2. And (4) promoting the bonding interface to reach the distance acted by the electrostatic force by adjusting the bonding pressure so as to complete the subsequent process.
In the above embodiment, the bonding voltage parameter ranges from DC 900V to 1200V; the bonding time parameter ranges from 50 to 2000 s.
In the above embodiment, the dielectric barrier discharge voltage parameter range is AC 100-2000V; the dielectric barrier discharge frequency parameter range is 5-100 KHz; the dielectric barrier discharge time parameter range is 0.1-500 s.
Referring to fig. 2 and 3, the composite anodic bonding apparatus of the present invention includes a dielectric barrier discharge power supply 06, a bonding power supply 08, an electrode 01, a power supply switching control mechanism 09, wherein the dielectric barrier discharge power supply 06 and the bonding power supply 08 are respectively connected to the electrode 01 through the power supply switching control mechanism 09, and the apparatus further includes a bonding temperature and bonding pressure control system, which is disposed on the worktable and is composed of a bonding temperature controller 05 and a bonding pressure controller 07 for controlling the bonding pressure and the bonding temperature. The silicon chip 04 and the glass sheet 02 are mutually attached and stacked between the bonding temperature controller 05 and the bonding pressure controller 07, and the bonded interface of the silicon chip 04 and the glass sheet 02 naturally forms a nano gap 03. The electrode 01 of the composite anodic bonding device is composed of an upper electrode 011 and a lower electrode 012, the upper electrode 011 is connected with the cathode of the dielectric barrier discharge power supply 06 or the bonding power supply 08 through the power supply switching control mechanism 09, and the lower electrode 012 is connected with the anode of the dielectric barrier discharge power supply 06 or the bonding power supply 08 through the power supply switching control mechanism 09. The dielectric barrier discharge power source 06 is provided with a dielectric barrier discharge parameter control system for controlling dielectric barrier discharge voltage, dielectric barrier discharge time and dielectric barrier discharge frequency, and the bonding power source 09 is provided with a bonding parameter control system for controlling bonding voltage and bonding time.
The method comprises the following steps: firstly, respectively setting composite anodic bonding parameters: setting a bonding heating temperature parameter of 150-; secondly, mutually attaching and stacking the silicon wafer 04 and the glass sheet 02 between the temperature controller 05 and the pressure controller 07 on the worktable, naturally forming a nanometer gap 03 on a bonded interface of the silicon wafer 04 and the glass sheet 02, applying a set bonding pressure parameter to the bonded interface, and heating the worktable to a set bonding temperature; then, starting a dielectric barrier discharge power supply 06, generating plasma discharge in the nanometer gap 03 under the action of AC100-2000V discharge voltage and 5-100KHz discharge frequency, and carrying out activation treatment on the bonded interface for 0.1-500 s; and then, switching a bonding power supply 08, and carrying out anodic bonding treatment on the bonded interface for 50-2000s under the action of DC900-1200V bonding voltage to obtain the bonding layer. The workbench in this embodiment is a fixed workbench.
The bonding layer prepared via the above examples compared to the bonding layer prepared by the prior art gives the following table:
| parameter(s) | Prior Art | The invention |
| Temperature of | 350-500℃ | 150-350℃ |
| Pressure of | 0.1-50g/mm2 | 0.1-50g/mm2 |
| Dielectric barrier discharge voltage | AC100-2000V | AC100-2000V |
| Dielectric barrier discharge frequency | 5-100KHz | 5-100KHz |
| Dielectric barrier discharge time | 0.1-500s | 0.1-500s |
| Bonding voltage | DC900-1200V | DC900-1200V |
| Bonding time | 50-2000s | 50-2000s |
| Bond strength | 2-15MPa | 3-30MPa |
According to the above contents, the bonded interface is activated by performing the dielectric barrier plasma discharge process in the nanogap, and then the anodic bonding process is completed in situ by switching the bonding power supply, so that the bonding strength of the obtained bonding layer and the bonding layer prepared in the prior art is improved by 50-100%, and the efficient bonding reaction is realized.
When the silicon chip is clamped on the fixed workbench, the glass body is clamped on the movable workbench, conversely, when the glass body is clamped on the fixed workbench, the silicon chip is clamped on the movable workbench, and the nano-scale gap (1-999nm) is formed between the silicon chip and the glass chip through the control of the movable workbench, so that the technical effects of the embodiment can be achieved, and further description is omitted.
The invention utilizes the nanometer gap of the bonded interface in anodic bonding to carry out the activation process of dielectric barrier discharge, and then switches the power supply to directly complete the anodic bonding process, thereby realizing the low-temperature bonding of in-situ activation. Meanwhile, the two processes are integrated on the same station, so that the complexity of the whole equipment is simplified, the structure is simpler, the production cost is reduced, and the economic benefit is improved; secondly, through integration, unified regulation and control of process parameters of two processes can be realized, the operation is more convenient, and the process controllability is better; in addition, the activation and bonding processes are successively completed by utilizing the nanometer gap of the same bonded interface, the discharge gap and the bonding gap of the bonded part do not need to be reset, the operation steps are simplified, the quality problem caused by operation errors is reduced, and the yield is improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (5)
1. A composite anodic bonding method for in-situ activation of a nanogap comprises a discharge activation process and an anodic bonding process, and is characterized in that: the discharge activation process is a dielectric barrier plasma discharge interface activation process, the dielectric barrier plasma discharge interface activation process and an anodic bonding process are integrated on the same station, and the composite anodic bonding method specifically comprises the following steps:
s1, setting composite anode bonding parameters, wherein the composite anode bonding parameters comprise bonding temperature, bonding pressure, bonding voltage, bonding time, dielectric barrier discharge voltage, dielectric barrier discharge time and dielectric barrier discharge frequency;
s2, laminating and stacking the silicon chip and the glass chip on a workbench, forming a nanogap on a bonded interface, applying the bonding pressure to the bonded interface, and heating the workbench to the bonding temperature;
s3, applying the dielectric barrier discharge voltage, the dielectric barrier discharge time and the dielectric barrier discharge frequency parameter to complete the discharge activation process of the bonded interface;
and S4, applying the bonding voltage and the bonding time parameters to finish the anodic bonding procedure of the bonded interface.
2. The composite anodic bonding method according to claim 1, wherein the bonding temperature is in the range of 150-350 ℃.
3. The composite anodic bonding method according to claim 1, wherein the bonding pressure is in a range of 0.1 to 50g/mm2。
4. The composite anodic bonding method according to claim 1, wherein the bonding voltage is in a range of DC 900-1200V; the bonding time is in the range of 50-2000 s.
5. The composite anodic bonding method according to claim 1, wherein the dielectric barrier discharge voltage is in a range of AC 100-2000V; the range of the dielectric barrier discharge frequency is 5-100 KHz; the dielectric barrier discharge time ranges from 0.1 s to 500 s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810183325.6A CN108383080B (en) | 2018-03-06 | 2018-03-06 | Composite anodic bonding method for in-situ activation of nano-gap |
| PCT/CN2018/085545 WO2019169728A1 (en) | 2018-03-06 | 2018-05-04 | Nano-gap in-situ activation-based composite anodic bonding method |
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| CN201810183325.6A CN108383080B (en) | 2018-03-06 | 2018-03-06 | Composite anodic bonding method for in-situ activation of nano-gap |
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| CN108383080B true CN108383080B (en) | 2020-04-10 |
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| CN108383080B (en) * | 2018-03-06 | 2020-04-10 | 苏州大学 | Composite anodic bonding method for in-situ activation of nano-gap |
| CN111217326B (en) * | 2020-01-09 | 2023-04-18 | 太原科技大学 | Low-temperature anodic bonding method for polyurethane elastomer and aluminum sheet |
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| CN102659071A (en) * | 2012-05-16 | 2012-09-12 | 苏州大学 | Composite anodic bonding method |
| CN103145096A (en) * | 2013-03-27 | 2013-06-12 | 山东理工大学 | Low-temperature ultrasound anodic bonding method of silicon wafer and glass sheet |
| CN105742258A (en) * | 2010-08-20 | 2016-07-06 | S.O.I.Tec绝缘体上硅技术公司 | Low-Temperature Bonding Process |
| CN106365114A (en) * | 2015-07-22 | 2017-02-01 | 苏州美图半导体技术有限公司 | Low-temperature hot-pressing bonding method |
| CN207918426U (en) * | 2018-03-06 | 2018-09-28 | 苏州大学 | Composite anode bonding apparatus |
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| US9114977B2 (en) * | 2012-11-28 | 2015-08-25 | Invensense, Inc. | MEMS device and process for RF and low resistance applications |
| CN104760927B (en) * | 2014-01-06 | 2016-08-31 | 无锡华润上华半导体有限公司 | The method of bonding |
| CN107352503A (en) * | 2016-05-09 | 2017-11-17 | 江苏英特神斯科技有限公司 | The anode linkage method and its application of polycrystalline silicon medium and glass on a kind of silicon substrate insulating barrier |
| CN108383080B (en) * | 2018-03-06 | 2020-04-10 | 苏州大学 | Composite anodic bonding method for in-situ activation of nano-gap |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742258A (en) * | 2010-08-20 | 2016-07-06 | S.O.I.Tec绝缘体上硅技术公司 | Low-Temperature Bonding Process |
| CN102659071A (en) * | 2012-05-16 | 2012-09-12 | 苏州大学 | Composite anodic bonding method |
| CN103145096A (en) * | 2013-03-27 | 2013-06-12 | 山东理工大学 | Low-temperature ultrasound anodic bonding method of silicon wafer and glass sheet |
| CN106365114A (en) * | 2015-07-22 | 2017-02-01 | 苏州美图半导体技术有限公司 | Low-temperature hot-pressing bonding method |
| CN207918426U (en) * | 2018-03-06 | 2018-09-28 | 苏州大学 | Composite anode bonding apparatus |
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