CN203607444U - A GAN-based light emitting diode structure enabling stress to be released - Google Patents
A GAN-based light emitting diode structure enabling stress to be released Download PDFInfo
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- CN203607444U CN203607444U CN201320659633.4U CN201320659633U CN203607444U CN 203607444 U CN203607444 U CN 203607444U CN 201320659633 U CN201320659633 U CN 201320659633U CN 203607444 U CN203607444 U CN 203607444U
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- based light
- sapphire substrate
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Abstract
The utility model discloses a GAN-based light emitting diode structure enabling stress to be released The GAN-based light emitting diode structure comprises a sapphire substrate and a GAN-based epitaxial layer. The GAN-based light emitting diode structure is characterized that strip-shaped isolation strips vertically and horizontally staggered or strip-shaped isolation grooves vertically and horizontally staggered are arranged in a growth face of the sapphire substrate; and the GAN-based epitaxial layer is arranged on areas outside the isolation strips or the isolation grooves on the growth face of the sapphire substrate. The utility model simultaneously discloses a manufacturing method for the GAN-based light emitting diode structure. According to the GAN-based light emitting diode structure of the utility model, the internal stress of a jumbo-size substrate epitaxy can be simply and conveniently released. Furthermore, the uniformity of wavelengths in the epitaxial layer can be raised, and the output yield rate of GAN-based LED chips can be raised.
Description
Technical field
The utility model belongs to light-emitting diode field, is specifically related to a kind of GaN based light-emitting diode structure that can effectively discharge stress.
Background technology
Current, under the increasingly severe background of global warming problem, energy savings, reduce greenhouse gas emission and become the major issue that the whole world is faced jointly.Take low energy consumption, low pollution, low emission as basic low-carbon economy, the important directions of economic development will be become.At lighting field, take LED(light-emitting diode) as the semiconductor light emitting product of representative, there are energy-saving and environmental protection, and the advantage such as light source life is long, volume is little, is just attracting common people's sight.
Current business-like GaN series LED is mainly to adopt the method epitaxial growth of metallo-organic compound chemical vapor deposition MOCVD at sapphire Al
2o
3on substrate, obtain.But, different due to lattice constant and thermal coefficient of expansion between Sapphire Substrate and GaN based material, in nitride material epitaxial process, because the effect of stress easily causes the warpage of epitaxial loayer, especially while adopting the growth of more than 2 inches substrate, stress situation is very serious, the obvious deviation that causes on the one hand growth wavelength in sheet, easily causes breaking of epitaxial loayer in chip manufacture process to affect yield on the other hand.The method of therefore, epitaxial growth low-stress material is the key technology that GaN base LED manufactures.
At present in Grown on Sapphire Substrates epitaxy of gallium nitride process, by the GaN of low-temperature epitaxy or the resilient coating of the AlN stress that slowly-releasing lattice deformation causes to a certain extent, as published Japan Patent JP2000124499 and JP7312350, but this method is less for the impact of the thermal stress in growth course.It is unbalance that Chinese patent CN1123937C employing compensates stress in the method for the close gallium nitride film layer of sapphire substrate upper and lower surface growth thickness, but the method process costs is high.In order to reduce the stress of large-sized substrate epitaxial loayer, patent CN102903812A has proposed to cut by stealth at process for sapphire-based intralamellar part the method that forms crisscross cutting cut.In actual cutting technique process, the aspects such as scratch depth, shape also need laser energy size to the stealthy cutting technique of laser, assemble the parameters such as position, cutting speed carries out finely regulating and could realize real stress and eliminate, and technique is comparatively complicated.
Summary of the invention
For the deficiencies in the prior art, the utility model provides a kind of novel GaN based light-emitting diode structure that can effectively discharge stress, can discharge simply and easily the internal stress of large-sized substrate extension, improve the uniformity and the fragmentation rate that reduces epitaxial loayer in chip manufacture process of wavelength in epitaxial loayer.
The technical solution of the utility model is: a kind of GaN based light-emitting diode structure of Stress Release, comprise Sapphire Substrate and GaN base epitaxial loayer, it is characterized in that: the aufwuchsplate of described Sapphire Substrate is provided with crisscross bar shaped isolation strip or crisscross bar shaped isolated groove, and the region division on the aufwuchsplate of Sapphire Substrate except isolation strip or isolated groove has GaN base epitaxial loayer.
Described longitudinal isolation strip is 1-100 bar, and lateral isolation band is 1-100 bar, and the width of every isolation strip is 1-50um.
Described isolation strip is by SiO
2or Si
xn
ythe isolation strip of making.
Described longitudinal isolation strip is parallel to each other, and lateral isolation band is parallel to each other, and the angle between longitudinal isolation strip and the lateral isolation band intersecting is 0-90 °.
Described longitudinal isolated groove number is 1-100 bar, and lateral isolation groove number is 1-100 bar, and the width of every isolated groove is 1-50um.
Described longitudinal isolated groove is parallel to each other, and lateral isolation groove is parallel to each other, and the angle between longitudinal isolated groove and the lateral isolation groove intersecting is 0-90 °.
Described GaN base epitaxial loayer comprises the gallium nitride resilient coating, n type gallium nitride layer, luminescent layer and the P type gallium nitride material layer that outwards set gradually from Sapphire Substrate aufwuchsplate.
A manufacture method for the light emitting diode construction of Stress Release, is characterized in that: comprise the steps:
A, employing PECVD (Plasma Enhanced Chemical Vapor Deposition) technology are made crisscross SiO at the aufwuchsplate of Sapphire Substrate
2or Si
xn
ybar shaped isolation strip;
B, by MOCVD (Metal-organic Chemical Vapor Deposition) technology region growing GaN base epitaxial loayer except isolation strip on the aufwuchsplate of Sapphire Substrate.
A manufacture method for the light emitting diode construction of Stress Release, is characterized in that: comprise the steps:
A, employing ICP (Inductively Coupled Plasma) etching or wet-etching technique are made crisscross bar shaped isolated groove at the aufwuchsplate of Sapphire Substrate;
B, by MOCVD (Metal-organic Chemical Vapor Deposition) technology region growing GaN base epitaxial loayer except isolated groove on the aufwuchsplate of Sapphire Substrate.
The beneficial effects of the utility model are: the utility model has adopted said structure and method, the aufwuchsplate of Sapphire Substrate has been carried out to growth isolation processing, on this substrate basis, prepare GaN base epitaxial film materials by MOCVD technology, can eliminate the stress producing in GaN base LED material epitaxy growth course, improve the wavelength uniformity of large-sized substrate GaN base epitaxial loayer, promoted the output yield of GaN base LED chip.
Accompanying drawing explanation
Fig. 1 has a SiO for what the first embodiment provided
2the generalized section of the GaN based light-emitting diode structure of bar shaped isolation strip;
Fig. 2 has a SiO for what the first embodiment provided
2the schematic top plan view of the Sapphire Substrate of bar shaped isolation strip;
Fig. 3 has a Si for what the second embodiment provided
xn
ythe generalized section of the GaN based light-emitting diode structure of bar shaped isolation strip;
Fig. 4 has a Si for what the second embodiment provided
xn
ythe schematic top plan view of the Sapphire Substrate of bar shaped isolation strip;
The generalized section of the GaN based light-emitting diode structure with bar shaped isolated groove that Fig. 5 provides for the 3rd embodiment;
The schematic top plan view of the Sapphire Substrate with bar shaped isolated groove that Fig. 6 provides for the 3rd embodiment.
In figure, 1-Sapphire Substrate, 2-GaN base epitaxial loayer, 3-isolation strip, 4-isolated groove.
Embodiment
Below in conjunction with accompanying drawing, execution mode of the present utility model is described more specifically:
The first embodiment, the GaN based light-emitting diode structure that the utility model provides, cross section as shown in Figure 1, comprises and has bar shaped SiO
2the Sapphire Substrate 1 of isolation strip 3 and GaN base epitaxial loayer 2, wherein GaN base epitaxial loayer 2 comprises gallium nitride resilient coating, n type gallium nitride layer, luminescent layer, P type gallium nitride material layer.The manufacture method of this embodiment is as follows:
1, on the aufwuchsplate of Sapphire Substrate, make the SiO that two row two are listed as by PECVD
2bar shaped isolation strip 3, as shown in Figure 2, every SiO
2the thickness of isolation strip 3 is 15-20um, and width is 20um;
2, on the aufwuchsplate of Sapphire Substrate, grown and formed GaN base epitaxial loayer by MOCVD in the region except isolation strip.
The second embodiment, the GaN based light-emitting diode structure that the utility model provides, cross section as shown in Figure 3, comprises and has bar shaped Si
xn
ythe Sapphire Substrate 1 of isolation strip 3 and GaN base epitaxial loayer 2, wherein GaN base epitaxial loayer 2 comprises gallium nitride resilient coating, n type gallium nitride layer, luminescent layer, P type gallium nitride material layer.The manufacture method of this embodiment is as follows:
1, on the aufwuchsplate of Sapphire Substrate, make the single-row Si of single file by PECVD
xn
ybar shaped isolation strip 3, as shown in Figure 4, every SiO
2the thickness of isolation strip 3 is 10-15um, and width is 20um;
2, on the aufwuchsplate of Sapphire Substrate, grown and formed GaN base epitaxial loayer by MOCVD in the region except isolation strip 3.
The 3rd embodiment, the GaN based light-emitting diode structure that the utility model provides, cross section as shown in Figure 5, comprise Sapphire Substrate 1 and the GaN base epitaxial loayer 2 with bar shaped isolated groove 4, wherein GaN base epitaxial loayer 2 comprises gallium nitride resilient coating, n type gallium nitride layer, luminescent layer, P type gallium nitride material layer.The manufacture method of this embodiment is as follows:
1, the bar shaped isolated groove 4 being listed as at Sapphire Substrate etching two row two by ICP technique, as shown in Figure 6, the degree of depth of isolated groove is 10-15um, width is 20um;
2, on the aufwuchsplate of Sapphire Substrate, grown and formed GaN base epitaxial loayer by MOCVD in the region except isolated groove.
Cited specific embodiment above, the aufwuchsplate of Sapphire Substrate has been carried out to growth isolation processing, can effectively discharge the stress producing in GaN base LED material epitaxy growth course on the one hand, improve the wavelength uniformity of large-sized substrate GaN base LED epitaxial loayer, on the other hand, also can reduce the warpage degree of GaN base epitaxial loayer, thereby be lifted at the output yield in follow-up chip manufacturing process.
That in above-described embodiment and specification, describes just illustrates principle of the present utility model and most preferred embodiment; do not departing under the prerequisite of the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.
Claims (7)
1. the GaN based light-emitting diode structure of a Stress Release, comprise Sapphire Substrate and GaN base epitaxial loayer, it is characterized in that: the aufwuchsplate of described Sapphire Substrate is provided with crisscross bar shaped isolation strip or crisscross bar shaped isolated groove, and the region division on the aufwuchsplate of Sapphire Substrate except isolation strip or isolated groove has GaN base epitaxial loayer.
2. the GaN based light-emitting diode structure of Stress Release according to claim 1, is characterized in that: described longitudinal isolation strip is 1-100 bar, lateral isolation band is 1-100 bar, and the width of every isolation strip is 1-50um.
3. the GaN based light-emitting diode structure of Stress Release according to claim 2, is characterized in that: described longitudinal isolation strip is parallel to each other, and lateral isolation band is parallel to each other, and the angle between longitudinal isolation strip and the lateral isolation band intersecting is 0-90 °.
4. according to the GaN based light-emitting diode structure of the Stress Release described in claim 2 or 3, it is characterized in that: described isolation strip is by SiO
2or Si
xn
ythe isolation strip of making.
5. the GaN based light-emitting diode structure of Stress Release according to claim 1, is characterized in that: described longitudinal isolated groove number is 1-100 bar, and lateral isolation groove number is 1-100 bar, and the width of every isolated groove is 1-50um.
6. the GaN based light-emitting diode structure of Stress Release according to claim 5, it is characterized in that: described longitudinal isolated groove is parallel to each other, lateral isolation groove is parallel to each other, and the angle between longitudinal isolated groove and the lateral isolation groove intersecting is 0-90 °.
7. the GaN based light-emitting diode structure of Stress Release according to claim 1, is characterized in that: described GaN base epitaxial loayer comprises the gallium nitride resilient coating, n type gallium nitride layer, luminescent layer and the P type gallium nitride material layer that outwards set gradually from Sapphire Substrate aufwuchsplate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320659633.4U CN203607444U (en) | 2013-10-25 | 2013-10-25 | A GAN-based light emitting diode structure enabling stress to be released |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320659633.4U CN203607444U (en) | 2013-10-25 | 2013-10-25 | A GAN-based light emitting diode structure enabling stress to be released |
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| Publication Number | Publication Date |
|---|---|
| CN203607444U true CN203607444U (en) | 2014-05-21 |
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|---|---|---|---|
| CN201320659633.4U Expired - Fee Related CN203607444U (en) | 2013-10-25 | 2013-10-25 | A GAN-based light emitting diode structure enabling stress to be released |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576865A (en) * | 2013-10-25 | 2015-04-29 | 广东德力光电有限公司 | Stress-released GaN-based LED structure and manufacturing method |
| CN111344873A (en) * | 2019-12-16 | 2020-06-26 | 重庆康佳光电技术研究院有限公司 | Micro LED chip manufacturing process method and micro LED epitaxial wafer |
-
2013
- 2013-10-25 CN CN201320659633.4U patent/CN203607444U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576865A (en) * | 2013-10-25 | 2015-04-29 | 广东德力光电有限公司 | Stress-released GaN-based LED structure and manufacturing method |
| CN111344873A (en) * | 2019-12-16 | 2020-06-26 | 重庆康佳光电技术研究院有限公司 | Micro LED chip manufacturing process method and micro LED epitaxial wafer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140521 Termination date: 20171025 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |