CN203552723U - Novel double-faced ITO (indium tin oxides) conducting film structure - Google Patents

Novel double-faced ITO (indium tin oxides) conducting film structure Download PDF

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Publication number
CN203552723U
CN203552723U CN201320491832.9U CN201320491832U CN203552723U CN 203552723 U CN203552723 U CN 203552723U CN 201320491832 U CN201320491832 U CN 201320491832U CN 203552723 U CN203552723 U CN 203552723U
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China
Prior art keywords
film structure
conducting film
novel double
novel
layer
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Expired - Fee Related
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CN201320491832.9U
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Chinese (zh)
Inventor
李晨光
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Jiangxi Zhanyao Microelectronics Co ltd
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Nanchang OFilm Tech Co Ltd
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Priority to CN201320491832.9U priority Critical patent/CN203552723U/en
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Abstract

The utility model relates to a novel double-faced ITO (indium tin oxides) conducting film structure, which is a novel double-faced ITO conducting film in the industry of touch screens, and can be used in the processing field of touch screens with large, medium, small sizes. According to the novel double-faced ITO conducting film structure, an adhesion layer, a transparent conducting layer, a metal layer and a protection layer are sequentially arranged on the upper surface and the lower surface of a flexible transparent substrate. Compared with the prior art, the novel double-faced ITO conducting film structure disclosed by the utility model has the advantages of obviously reducing a line width, improving fineness, increasing the use efficiency of a display area, and narrowing down the ink area of a screen border; and the novel double-faced ITO conducting film structure is used for replacing the current bonding mode in a production line, and capable of improving production yield and production capacity.

Description

A kind of novel two-sided ITO conductive film structure
Technical field
The utility model relates to a kind of novel two-sided ITO conductive film structure, belongs to a kind of novel two-sided ITO conductive film in touch-screen industry, can be used for large, medium and small Dimension Type touch-screen processing procedure field.
Background technology
Common capacitance formula touch screen structure has surface capacitance type touch screen and projected capacitive touch screen, and surface capacitance type touch screen only adopts individual layer ito thin film, the electric charge of being taken away at top layer static electric field by finger from four angle inductions, thus extrapolate electric shock position.Projected capacitive touch screen adopts two-layer ito thin film, by mutual capacitance between every one deck ITO layer induction and finger, takes away electric charge, and with respect to surface capacitance type, projected capacitive can penetrate compared with thick-covering.
Projecting type capacitor screen manufacture craft contains respectively two the ITO Film that roll off the production line that reach the standard grade, and respectively different I TO Film is etched after required graphic structure, above rolls off the production line to fit to after being connected with touch-control IC circuit by conducting wire together to form touch control sensor.Double-deck laminating type directly reduces light penetration, increases touch-screen general thickness, and the laminating of rolling off the production line on is in addition relevant to yield, and particularly subsides and mode entirely, directly have influence on finished product yield and reduced production capacity.
Summary of the invention
In order to overcome above-mentioned defect, the utility model object is to provide a kind of novel two-sided ITO conductive film structure.Touch-screen overall product transmitance in terms of existing technologies, has improved in this film system, has reduced general thickness, and less laminating number of times, can make touch-screen produce product yield and rise.
In order to achieve the above object, the utility model adopts following technical scheme:
A novel two-sided ITO conductive film structure, is disposed with adhesive linkage, transparency conducting layer, metal level, protective layer in the upper and lower surface of flexible and transparent base material.
Described flexible and transparent base material is the two-sided hard formation optical grade PET that adds: PETG, its ranges of indices of refraction is 1.4---1.7.
Described adhesive linkage is SiO 2or SiO 2with SiO mixture, its thickness range is 30nm-100nm.To guarantee the rear sheet resistance stability requirement of reflectance curve and annealing.
Described transparency conducting layer is ITO rete, and its thickness range is 18nm-80nm.According to difference, require upper and lower surface can be coated with different sheet resistance films, scope: 50 Ω--300 Ω.
Described metal level is metallic copper rete, and its thickness range is 200 nm-700nm, and impedance ranges is 0.01 Ω/--0.1 Ω/.After etching, be used to form conducting wire.
Described protective layer is metallic copper Nitinol rete, and its thickness range is 100 nm-5000nm.For the protection of copper film layer, prevent copper film layer oxidation.
The utility model compared with prior art has following technological merit:
The utility model compared with prior art has live width obviously to be reduced, and fineness improves, and improves viewing area utilization rate, and screen frame inked areas narrows down; Replaced current product line laminating type, improved and produce dose rate and production capacity.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
In order to describe the These characteristics of the utility model patent in detail, advantage and operation principle, be described further the utility model below in conjunction with Figure of description 1 and embodiment, but the scope that the utility model is protected is not limited to this.
A novel two-sided ITO conductive film structure, is disposed with adhesive linkage 2, transparency conducting layer 3, metal level 4, protective layer 5 in the upper and lower surface of flexible and transparent base material 1.
Described flexible and transparent base material 1 is the two-sided hard formation optical grade PET that adds: PETG, its ranges of indices of refraction is 1.4---1.7.
Described adhesive linkage 2 is SiO 2or SiO 2with SiO mixture, its thickness range is 30nm-100nm.
Described transparency conducting layer 3 is ITO rete, and its thickness range is 18nm-80nm.
Described metal level 4 is metallic copper rete, and its thickness range is 200n-700nm, and impedance ranges is 0.01 Ω/--0.1 Ω/.
Described protective layer 5 is metallic copper Nitinol rete, and its thickness range is 100nm-5000nm.
Adhesive linkage is SiO 2or SiO 2with SiO mixture, for increasing transparency conducting layer and base material adhesive force, adopt the twin target position magnetron sputtering of intermediate frequency mode to be coated with, upper and lower surface thickness of adhibited layer scope: 30nm-100nm, according to different I TO thicknesses of layers, adjust different bonding layer thickness, to guarantee the rear sheet resistance stability requirement of reflectance curve and annealing;
Transparency conducting layer is ITO rete, adopt magnetically controlled DC sputtering mode to be coated with, upper and lower surface transparency conducting layer coating film thickness scope is 18nm-80nm, according to difference, requires upper and lower surface can be coated with different sheet resistance films, scope: 100 Ω--300 Ω, transmitance is higher than 88%;
After one side has been coated with, changes coiling direction another side is coated with, adhesive linkage and electrically conducting transparent layer thickness are coated with on demand;
After double-sided adhesive layers and transparency conducting layer have been coated with, enter aging line by the crystallization of ITO rete, aging condition: 150 ℃/30min;
Metallic copper rete adopts magnetically controlled DC sputtering mode to be coated with, and upper and lower surface metal layer thickness scope is 200nm-700nm, and sheet resistance scope 0.1 Ω-0.5 Ω, is used to form conducting wire after etching;
Metallic copper Nitinol rete adopts magnetically controlled DC sputtering mode to be coated with, and upper and lower surface metal layer thickness scope is 100nm-5000nm, for the protection of copper film layer, prevents copper film layer oxidation;
After double-sided metallic and protective layer have been coated with, cover diaphragm, prevent from producing and scratching in production procedure, booty etc. are bad;
The above embodiment has only expressed a kind of execution mode of this patent, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to this patent scope.It should be pointed out that for the person of ordinary skill of the art, not departing under the prerequisite of this patent design, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of this patent should be as the criterion with claims.

Claims (5)

1. a novel two-sided ITO conductive film structure, is characterized in that: the upper and lower surface at flexible and transparent base material (1) is disposed with adhesive linkage (2) transparency conducting layer (3), metal level (4), protective layer (5);
Described adhesive linkage (2) is SiO 2or SiO 2with SiO mixture, its thickness range is 30nm-100nm.
2. novel two-sided ITO conductive film structure according to claim 1, is characterized in that: described flexible and transparent base material (1) is the two-sided hard formation optical grade PET that adds: PETG, its ranges of indices of refraction is 1.4---1.7.
3. novel two-sided ITO conductive film structure according to claim 1, is characterized in that: described transparency conducting layer (3) is ITO rete, and its thickness range is 18nm-80nm.
4. novel two-sided ITO conductive film structure according to claim 1, is characterized in that: described metal level (4) is metallic copper rete, and its thickness range is 200 nm-700nm, and impedance ranges is 0.01 Ω/--0.1 Ω/.
5. novel two-sided ITO conductive film structure according to claim 1, is characterized in that: described protective layer (5) is metallic copper Nitinol rete, and its thickness range is 100 nm-5000nm.
CN201320491832.9U 2013-08-13 2013-08-13 Novel double-faced ITO (indium tin oxides) conducting film structure Expired - Fee Related CN203552723U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320491832.9U CN203552723U (en) 2013-08-13 2013-08-13 Novel double-faced ITO (indium tin oxides) conducting film structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320491832.9U CN203552723U (en) 2013-08-13 2013-08-13 Novel double-faced ITO (indium tin oxides) conducting film structure

Publications (1)

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CN203552723U true CN203552723U (en) 2014-04-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111607778A (en) * 2020-07-09 2020-09-01 北京载诚科技有限公司 Cooling equipment for coating, coating equipment and method and roll-to-roll film
CN112373141A (en) * 2020-10-30 2021-02-19 江苏日久光电股份有限公司 Novel conductive film, preparation method thereof and touch screen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111607778A (en) * 2020-07-09 2020-09-01 北京载诚科技有限公司 Cooling equipment for coating, coating equipment and method and roll-to-roll film
CN111607778B (en) * 2020-07-09 2023-11-03 北京载诚科技有限公司 Cooling equipment for coating, coating equipment, method and roll-to-roll film
CN112373141A (en) * 2020-10-30 2021-02-19 江苏日久光电股份有限公司 Novel conductive film, preparation method thereof and touch screen

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20211013

Address after: Room 422, 4th floor, building 1, Linrui youth apartment, 955 rulehu street, Airport Economic Zone, Nanchang City, Jiangxi Province 330000

Patentee after: Jiangxi zhanyao Microelectronics Co.,Ltd.

Address before: 330000 Huangjiahu Road, Nanchang Economic and Technological Development Zone, Jiangxi Province

Patentee before: Nanchang OFilm Tech. Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140416