CN203481182U - Etching equipment - Google Patents
Etching equipment Download PDFInfo
- Publication number
- CN203481182U CN203481182U CN201320588163.7U CN201320588163U CN203481182U CN 203481182 U CN203481182 U CN 203481182U CN 201320588163 U CN201320588163 U CN 201320588163U CN 203481182 U CN203481182 U CN 203481182U
- Authority
- CN
- China
- Prior art keywords
- etching
- reaction chamber
- etching apparatus
- power supply
- slot antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The utility model brings forward etching equipment which comprises a reaction chamber, an electronic chuck arranged inside the reaction chamber, a top disk disposed on the top inside the reaction chamber, a radial slot antenna which is mounted on the top disk and is arranged opposite to the electronic chuck and keeps a predetermined distance from the electronic chuck, an inductively-coupled power supply arranged on the top of the reaction chamber and a bias power supply disposed on the bottom of the electronic chuck. As the inductively coupled power supply and the bias power supply are additionally arranged, an inductively coupled plasma technology also can be used for etching during etching by a SWP technology. Thus, LWR uncontrollable problem can be solved according to different options, different etching degrees of a device compact area and a device sparse area can be controlled by adjusting the bias power supply, and damage to the wafer surface can be minimized.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of etching apparatus.
Background technology
Along with the generation of large scale integrated circuit, the lasting reduction of the characteristic size of semiconductor device, many existing production technologies all suffer from different challenges and problem.At technology node, enter 14nm when following, what etching technics was comparatively popular is to adopt ground roll plasma (Surface Wave Plasma, SWP) mode to carry out etching.Concrete, please refer to Fig. 1, in prior art, the etching device of SWP mode comprises: reaction chamber (scheming not shown), be positioned at the electronics chuck (ESC) 10 of described reaction chamber inner bottom part, described electronics chuck 10 is for carrying wafer 20 to be etched, be fixed on the top board (Top Plate) 40 at described reaction chamber top, described top board 40 is provided with radial transmission line slot antenna (Radial Line Slot Antenna, RLSA) (scheme not shown), be fixed on the quartz plate 30 between wafer 20 to be measured and radial transmission line slot antenna.
When carrying out etching, etching gas is evenly distributed on the surface of wafer to be etched by radial transmission line slot antenna by the gas slurry of generation, and wafer is carried out to etching.Why all the fashion below 14nm SWP technology is is because SWP technology can not cause too large damage to crystal column surface, yet, the gas slurry uniformity producing due to etching gas in SWP technology is wayward, cause the line width roughness (Line Width Roughness, LWR) that etches uncontrollable.
In prior art, also having a kind of etching mode is that inductively coupled plasma (Inductively Coupled Plasma, ICP) technology is carried out etching.ICP can be good at solving the uncontrollable problem of LWR, simultaneously also can be according to the different etching degree of coming control device compact district (Dense) with device rarefaction (ISO) to the adjusting of bias voltage, yet inductively coupled plasma Technology Need uses vacuum ultraviolet (Vacuum UV, and this vacuum ultraviolet easily causes larger damage to the surface of wafer to be etched VUV).
Based on the problems referred to above, how solving in the uncontrollable situation of LWR, can make again the damage of crystal column surface be down to minimum, just become the technical problem that those skilled in the art need to solve.
Utility model content
The purpose of this utility model is to provide a kind of etching apparatus, SWP technology and inductively coupled plasma can be combined, and can solve the uncontrollable problem of LWR, and reduces the damage to crystal column surface.
To achieve these goals, the utility model proposes a kind of etching apparatus, for wafer to be etched is carried out to etching, described etching apparatus comprises:
Reaction chamber, electronics chuck, take over a business, radial transmission line slot antenna, inductance coupling high power supply and bias supply; It is inner that described electronics chuck is arranged at described reaction chamber, describedly take over a business to be arranged at described reaction chamber inner top, on taking over a business described in described radial transmission line slot antenna is arranged at, described radial transmission line slot antenna is relative with described electronics chuck and keep preset distance, described inductance coupling high power supply is arranged at the top of described reaction chamber, and described bias supply is arranged at the bottom of described electronics chuck.
Further, described etching apparatus also comprises quartz plate, and described quartz plate is arranged between described radial transmission line slot antenna and electronics chuck, and described quartz plate and described top board fix.
Further, described electronics chuck is divided into a plurality of bulks, and each block temperature all can independently be controlled.
Further, the material of described electronics chuck comprises aluminium nitride, aluminium oxide and sapphire.
Further, the predetermined distance range of described radial transmission line slot antenna and described electronics chuck is 10mm to 50mm.
Further, the number of described bias supply is more than or equal to 1.
Compared with prior art, the beneficial effects of the utility model are mainly reflected in: owing to having added inductance coupling high power supply and bias supply, when carrying out SWP technology etching, can also transform and use inductively coupled plasma technology to carry out etching, thereby can solve according to different selections the uncontrollable problem of LWR, can be by the adjusting of bias supply being carried out to the different etching degree of control device compact district and device rarefaction, and can reduce the damage to crystal column surface.
Accompanying drawing explanation
Fig. 1 is the structural representation of etching apparatus in prior art;
Fig. 2 is the structural representation of etching apparatus in the utility model one embodiment.
Embodiment
Below in conjunction with schematic diagram, etching apparatus of the present utility model is described in more detail, wherein represented preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the utility model chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example, according to the restriction of relevant system or relevant business, by an embodiment, change into another embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, with reference to accompanying drawing, with way of example, the utility model is more specifically described.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of aid illustration the utility model embodiment lucidly.
Please refer to Fig. 2, in the present embodiment, proposed a kind of etching apparatus, for wafer 200 to be etched is carried out to etching, described etching apparatus comprises:
Reaction chamber (scheming not shown), electronics chuck 100, take over a business 400, radial transmission line slot antenna (scheming not shown), inductance coupling high power supply 520 and bias supply 510, it is inner that described electronics chuck 100 is arranged at described reaction chamber, described electronics chuck 100 is for carrying described wafer to be measured 200, describedly take over a business 400 and be arranged at described reaction chamber inner top, described in being arranged at, described radial transmission line slot antenna takes over a business on 400, described radial transmission line slot antenna is relative with described electronics chuck 100 and keep preset distance, described radial transmission line slot antenna can be dissociated into etching gas gas slurry form, and gas slurry is evenly distributed on to the surface of described wafer to be measured 200, for described wafer 200 to be measured being carried out to the etching of SWP technology, described inductance coupling high power supply 520 is arranged at the top of described reaction chamber, described bias supply 510 is arranged at the bottom of described electronics chuck 100, described inductance coupling high power supply 520 and bias supply 510 are for providing pulse voltage, form inductively coupled plasma, thereby can carry out inductively coupled plasma technology to described wafer 200 to be measured and carry out etching.
In the present embodiment, because needs adopt vacuum ultraviolet, therefore described etching apparatus also comprises quartz plate 300, described quartz plate 300 is arranged between described radial transmission line slot antenna and electronics chuck 100, described quartz plate 300 fixes with described top board 400, and described quartz plate 300 can see through vacuum ultraviolet.
In the present embodiment, described electronics chuck 100 is divided into a plurality of bulks, each block temperature all can independently be controlled, each block temperature all can be adjusted to 100 degrees Celsius from 0 degree Celsius, because temperature has a certain impact to etching efficiency, in order to make the etching uniformity of described wafer to be measured 200 adjustable, therefore described electronics chuck 100 is divided into a plurality of bulks, each block temperature is all adjustable, and this just can be by regulating different block temperature to regulate the etching homogeneity of described wafer to be measured 200.
Wherein, described electronics chuck is comprised of aluminium nitride, aluminium oxide and sapphire.
Whether due to the size of the predetermined distance range of described radial transmission line slot antenna and described electronics chuck 100, can to determine to form gas slurry good in the uniformity on described wafer to be measured 200 surfaces, in order to meet the demand of different process, in the present embodiment, the predetermined distance range of described radial transmission line slot antenna and described electronics chuck 100 can regulate, predetermined distance range is 10mm to 50mm, for example, be 30mm.
In the present embodiment, the power bracket of described inductance coupling high power supply 520 is 100W～2000W, for example 1000W, the number of described bias supply 510 is more than or equal to 1, be used for providing pulse voltage, voltage range is 0V～500V, and its pulse signal frequency can be 13.56MHz, 2MHz, 40MHz or 60MHz, specifically adopts which kind of frequency to select according to different technique.
When carrying out etching, can also be provided by the top of described reaction chamber the microwave of 2.45GHz for carrying out etching.The etching apparatus that the present embodiment proposes can adopt SWP technology or inductively coupled plasma technology to carry out etching according to demand.
To sum up, in the etching apparatus providing at the utility model embodiment, owing to having added inductance coupling high power supply and bias supply, when carrying out SWP technology etching, can also transform and use inductively coupled plasma skill
Above are only preferred embodiment of the present utility model, the utility model is not played to any restriction.Any person of ordinary skill in the field; within not departing from the scope of the technical solution of the utility model; the technical scheme that the utility model is disclosed and technology contents are made any type of changes such as replacement or modification that are equal to; all belong to the content that does not depart from the technical solution of the utility model, within still belonging to protection range of the present utility model.
Claims (6)
1. an etching apparatus, for wafer to be etched is carried out to etching, is characterized in that, described etching apparatus comprises:
Reaction chamber, electronics chuck, take over a business, radial transmission line slot antenna, inductance coupling high power supply and bias supply; It is inner that described electronics chuck is arranged at described reaction chamber, describedly take over a business to be arranged at described reaction chamber inner top, on taking over a business described in described radial transmission line slot antenna is arranged at, described radial transmission line slot antenna is relative with described electronics chuck and keep preset distance, described inductance coupling high power supply is arranged at the top of described reaction chamber, and described bias supply is arranged at the bottom of described electronics chuck.
2. etching apparatus as claimed in claim 1, is characterized in that, described etching apparatus also comprises quartz plate, and described quartz plate is arranged between described radial transmission line slot antenna and electronics chuck, described quartz plate with described in take over a business to fix.
3. etching apparatus as claimed in claim 1, is characterized in that, described electronics chuck is divided into a plurality of bulks, and each block temperature all can independently be controlled.
4. etching apparatus as claimed in claim 3, is characterized in that, the material of described electronics chuck comprises aluminium nitride, aluminium oxide and sapphire.
5. etching apparatus as claimed in claim 1, is characterized in that, the predetermined distance range of described radial transmission line slot antenna and described electronics chuck is 10mm to 50mm.
6. etching apparatus as claimed in claim 1, is characterized in that, the number of described bias supply is more than or equal to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320588163.7U CN203481182U (en) | 2013-09-23 | 2013-09-23 | Etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320588163.7U CN203481182U (en) | 2013-09-23 | 2013-09-23 | Etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203481182U true CN203481182U (en) | 2014-03-12 |
Family
ID=50229463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320588163.7U Expired - Fee Related CN203481182U (en) | 2013-09-23 | 2013-09-23 | Etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203481182U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107742607A (en) * | 2017-08-31 | 2018-02-27 | 重庆中科渝芯电子有限公司 | A kind of method that film resistor is made of ICP dry etchings |
| CN114628212A (en) * | 2020-12-10 | 2022-06-14 | 中国科学院微电子研究所 | Plasma processing chamber and semiconductor manufacturing equipment |
-
2013
- 2013-09-23 CN CN201320588163.7U patent/CN203481182U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107742607A (en) * | 2017-08-31 | 2018-02-27 | 重庆中科渝芯电子有限公司 | A kind of method that film resistor is made of ICP dry etchings |
| CN114628212A (en) * | 2020-12-10 | 2022-06-14 | 中国科学院微电子研究所 | Plasma processing chamber and semiconductor manufacturing equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8169148B2 (en) | Plasma generating apparatus | |
| CN103000511B (en) | Dry method metal etching method | |
| CN101990353B (en) | Plasma processing apparatus and plasma processing method | |
| US10262867B2 (en) | Fast-gas switching for etching | |
| CN117794040A (en) | Surface wave plasma generating device and semiconductor process equipment | |
| CN103476196A (en) | Plasma treatment device and plasma treatment method | |
| CN101295629B (en) | Methods to eliminate M-shape etch rate profile in inductively coupled plasma reactor | |
| CN107799458A (en) | The method and system of the distance piece shaping in situ of the multiple patterning of autoregistration | |
| KR101919641B1 (en) | Method for providing high etch rate | |
| WO2017152477A1 (en) | Apparatus for implementing impedance matching and power distribution, and semiconductor processing device | |
| US9059116B2 (en) | Etch with pulsed bias | |
| CN203481182U (en) | Etching equipment | |
| CN108811290A (en) | Plasma generating device and semiconductor equipment | |
| CN106328472B (en) | Plasma generating device and semiconductor processing equipment | |
| JP6180890B2 (en) | Plasma processing method | |
| CN103474328B (en) | The method of plasma treatment | |
| CN100527293C (en) | Inductive coupling coil and inductive coupling plasma apparatus thereof | |
| CN203895414U (en) | Plasma etching machine | |
| CN104900472A (en) | Plasma processing method | |
| CN104733275A (en) | Plasma process device | |
| CN101211687B (en) | Inductance coupling coil and inductance coupling plasma device applying same | |
| US9257296B2 (en) | Etch process with pre-etch transient conditioning | |
| US8906248B2 (en) | Silicon on insulator etch | |
| US20200234920A1 (en) | Coil and window for plasma processing system | |
| TW201921433A (en) | Substrate etching method and correspondingly processing device thereof for ensuring the vertical degree of the etched hole and avoiding the hole opening from being deformed |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140312 Termination date: 20190923 |