CN203466224U - Voltage reduction and heat dissipation-integrated silicon chain module - Google Patents
Voltage reduction and heat dissipation-integrated silicon chain module Download PDFInfo
- Publication number
- CN203466224U CN203466224U CN201320594616.7U CN201320594616U CN203466224U CN 203466224 U CN203466224 U CN 203466224U CN 201320594616 U CN201320594616 U CN 201320594616U CN 203466224 U CN203466224 U CN 203466224U
- Authority
- CN
- China
- Prior art keywords
- aluminum
- based copper
- silicon chain
- clad plate
- radiator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Radiation-Therapy Devices (AREA)
Abstract
The utility model discloses a voltage reduction and heat dissipation-integrated silicon chain module, which comprises a plurality of diode chips, an aluminum-based copper-clad board and a radiator, wherein the diode chips is welded on the aluminum-based copper-clad board in a first parallel connection and then serial connection mode to form a silicon chain; taps are led out from the serial nodes of the diode chips of the silicon chain; and the aluminum-based copper-clad board is installed on the radiator. According to the voltage reduction and heat dissipation-integrated silicon chain module, the contact surface between the diode chips and the aluminum-based copper-clad board is not oxidized, loosening is not likely to happen, and the performances are reliable; and the voltage reduction and heat dissipation-integrated silicon chain module has the advantages of low cost, good heat dissipation effect, safe use, and convenient installation.
Description
Technical field
The utility model relates to a kind of diode voltage dropping silicon chain, especially relates to the heating integrated silicon chain of a kind of powder for lowering blood pressure module.
Background technology
The structure of traditional diode voltage dropping silicon chain is: have the square aluminium flake of a boss to be superimposed with middle diode chip, then by mechanical method, the square aluminium flake of polylith is fixed, form the diode straight chain that head and the tail are in series, be called " silicon chain ".Existing diode voltage dropping silicon chain is due to diode chip and aluminium flake crimping, and the contact-making surface of diode chip and aluminium flake is oxidizable, and easily loosening, the insecure shortcoming of performance, and the diode voltage dropping silicon chain integral body of this structure is all charged, install and use dangerously, during use, want SC.
Summary of the invention
In order to solve the problems of the technologies described above, the utility model provides a kind of dependable performance, perfect heat-dissipating, use is safe, easy for installation and cost the is low heating integrated silicon chain of powder for lowering blood pressure module.
The technical solution adopted in the utility model is: comprise a plurality of diode chip for backlight unit, aluminum-based copper-clad plate and radiator, described diode chip for backlight unit is welded on and on aluminum-based copper-clad plate, forms a silicon chain in the first mode of series connection more in parallel, on the diode chip for backlight unit series connection node of described silicon chain, draw tap, described aluminum-based copper-clad plate is arranged on radiator.
In the heating integrated silicon chain of above-mentioned powder for lowering blood pressure module, described radiator is provided with the groove corresponding with aluminum-based copper-clad plate, and aluminum-based copper-clad plate is arranged in groove, between aluminum-based copper-clad plate and groove floor, is provided with high-heat-conductivity glue, in the groove of radiator, fill up epoxy resin, epoxy resin is exposed in tap.
In the heating integrated silicon chain of above-mentioned powder for lowering blood pressure module, described tap is bolt, and is welded on aluminum-based copper-clad plate.
In the heating integrated silicon chain of above-mentioned powder for lowering blood pressure module, described aluminum-based copper-clad plate is strip.
Compared with prior art, the beneficial effects of the utility model are:
1, dependable performance: diode chip for backlight unit of the present utility model and aluminum-based copper-clad plate welding, the contact-making surface non-oxidation of diode chip for backlight unit and aluminum-based copper-clad plate, is difficult for becoming flexible, and can bear large surge current, dependable performance.
2, use safer: the utility model only has tap charged, uses safety.
3, cost is low: the utility model is saved cost approximately 20% than traditional silicon chain dropping equipment.
4, good heat dissipation effect: the utility model adopts aluminium radiator, and radiator is provided with the groove corresponding with conductor substrate, and conductor substrate is arranged in groove, and conductor substrate is bonded in groove floor by high-heat-conductivity glue, makes good heat dissipation effect of the present utility model.
5, the utility model is easy for installation.
Accompanying drawing explanation
Fig. 1 is front view of the present utility model.
Fig. 2 is left view of the present utility model.
Fig. 3 is upward view of the present utility model.
Fig. 4 is diode chip for backlight unit of the present utility model, the tap scheme of installation on aluminum-based copper-clad plate.
Fig. 5 is the schematic diagram in the utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As Figure 1-3, the utility model comprises a plurality of diode chip for backlight unit 4, the aluminum-based copper-clad plate 5 of the strip of length * wide * thick=500mm * 30mm * 1.5mm and radiator 1, as shown in Figure 4, described diode chip for backlight unit 4 is welded on aluminum-based copper-clad plate 5, diode chip for backlight unit 4 is divided into many groups by two every group on aluminum-based copper-clad plate 5, two diode chip for backlight unit 4 parallel connections between every group, diode chip for backlight unit 4 between many groups is connected to form a silicon chain in the mode of series connection, on diode chip for backlight unit 4 series connection nodes of described silicon chain, draw tap 2, tap 2 is made by M6 bolt, be welded on aluminum-based copper-clad plate 5.The material that described radiator adopts is aluminium, which is provided with the groove corresponding with aluminum-based copper-clad plate 5, aluminum-based copper-clad plate 5 is arranged in groove by screw, between the groove floor of aluminum-based copper-clad plate 5 and radiator 1, be provided with high-heat-conductivity glue, in the groove of radiator 1, fill up epoxy resin 3, epoxy resin 3 is exposed in the tap 2 being welded on aluminum-based copper-clad plate.Like this, tap 21 and radiator 1 insulation.As shown in Figure 5, operating current of the present utility model can reach 30A, and step-down scope is 35V to the maximum.
Referring to Fig. 4, Fig. 4 is diode chip for backlight unit in the utility model, the tap scheme of installation on aluminum-based copper-clad plate, and after every two diodes in parallels, serial connection forms a silicon chain again.
Diode chip for backlight unit 4 of the present utility model and aluminum-based copper-clad plate 5 welding, the contact-making surface non-oxidation of diode chip for backlight unit 4 and aluminum-based copper-clad plate 5, is difficult for becoming flexible, and can bear large surge current, dependable performance.Tap 2 on aluminum-based copper-clad plate 5 of the present utility model and radiator 1 insulation, make radiator 1 not charged, uses safety.The utility model adopts aluminium radiator 1, radiator 1 is provided with the groove corresponding with aluminum-based copper-clad plate 5, aluminum-based copper-clad plate 5 is arranged in the groove of radiator 1, and aluminum-based copper-clad plate 5 is bonded in groove floor by high-heat-conductivity glue, makes good heat dissipation effect of the present utility model.
Claims (4)
1. the heating integrated silicon chain of a powder for lowering blood pressure module, it is characterized in that: comprise a plurality of diode chip for backlight unit, aluminum-based copper-clad plate and radiator, described diode chip for backlight unit is welded on and on aluminum-based copper-clad plate, forms a silicon chain in the first mode of series connection more in parallel, on the diode chip for backlight unit series connection node of described silicon chain, draw tap, described aluminum-based copper-clad plate is arranged on radiator.
2. the heating integrated silicon chain of powder for lowering blood pressure as claimed in claim 1 module, it is characterized in that: described radiator is provided with the groove corresponding with aluminum-based copper-clad plate, aluminum-based copper-clad plate is arranged in groove, between aluminum-based copper-clad plate and groove floor, be provided with high-heat-conductivity glue, in the groove of radiator, fill up epoxy resin, epoxy resin is exposed in tap.
3. the heating integrated silicon chain of powder for lowering blood pressure as claimed in claim 1 or 2 module, is characterized in that: described tap is bolt, and is welded on aluminum-based copper-clad plate.
4. the heating integrated silicon chain of powder for lowering blood pressure as claimed in claim 1 or 2 module, is characterized in that: described aluminum-based copper-clad plate is strip, and it is of a size of: length * wide * thick=500mm * 30mm * 1.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320594616.7U CN203466224U (en) | 2013-09-26 | 2013-09-26 | Voltage reduction and heat dissipation-integrated silicon chain module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320594616.7U CN203466224U (en) | 2013-09-26 | 2013-09-26 | Voltage reduction and heat dissipation-integrated silicon chain module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203466224U true CN203466224U (en) | 2014-03-05 |
Family
ID=50178566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320594616.7U Expired - Lifetime CN203466224U (en) | 2013-09-26 | 2013-09-26 | Voltage reduction and heat dissipation-integrated silicon chain module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203466224U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104734499A (en) * | 2015-04-08 | 2015-06-24 | 湖南艾德迅电气工业有限公司 | Voltage reduction silicon assembly, direct current screen and direct-current power supply control system |
-
2013
- 2013-09-26 CN CN201320594616.7U patent/CN203466224U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104734499A (en) * | 2015-04-08 | 2015-06-24 | 湖南艾德迅电气工业有限公司 | Voltage reduction silicon assembly, direct current screen and direct-current power supply control system |
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