CN203457110U - High-efficiency variable-gain class-E radio frequency power amplifier - Google Patents
High-efficiency variable-gain class-E radio frequency power amplifier Download PDFInfo
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- CN203457110U CN203457110U CN201320115455.9U CN201320115455U CN203457110U CN 203457110 U CN203457110 U CN 203457110U CN 201320115455 U CN201320115455 U CN 201320115455U CN 203457110 U CN203457110 U CN 203457110U
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Abstract
The utility model discloses a high-efficiency variable-gain class-E radio frequency power amplifier which comprises an interstage matching circuit and an output amplifying stage. An output end of the interstage matching circuit is connected with the input end of the output amplifying stage. An input end of the interstage matching circuit is connected with a controllable amplifying stage which is used for a preamplifying function and signal amplitude gain control. The input end of the interstage matching circuit is connected with the output end of the controllable amplifying stage. The input end of the output amplifying stage is connected with a bias control circuit which is used for adjusting a grid offset voltage that enters a switch transistor of the output amplifying stage. The input end of the output amplifying stage is connected with the output end of the bias control circuit through an inductor. The high-efficiency variable-gain class-E radio frequency power amplifier is combined with a method for controlling signal amplitude and duty ratio, and realizes output power control for a non-linear class-E power amplifier. Compared with an original class-E power amplifier power control method, the high-efficiency variable-gain class-E radio frequency power amplifier has remarkably improved output power range and remarkably improved output power efficiency.
Description
Technical field
The utility model relates to a kind of power amplifier, specifically variable gain E class radio-frequency power amplifier.
Background technology
E power-like amplifier is proposed in 1975 first by people such as Sokal.The basic composition structure of circuit as shown in Figure 1, comprise: switching transistor SW(can adopt MOS transistor to drive its grid to realize switching function conventionally), the inductance L 1 being connected with supply voltage, the capacitor C in parallel with switching transistor, series resonance, in inductance L s and the Cs of operating frequency f0, is optimized reactance component jX(and is generally inductance) and load impedance R.
The operation principle of E power-like amplifier is as shown in Figure 1, and when input voltage is greater than MOS transistor threshold voltage, transistor is operated in linear zone, is equivalent to switch closure, and because resistance ron between drain-source is very little, so vs is approximately 0; And when input voltage is less than threshold voltage, field effect transistor cut-off, is equivalent to switch disconnect, is is 0.Now, C starts charging, causes that vs increases, and tuning network leaches first-harmonic from vs, is transferred on load resistance.When switch is again closed, meet two conditions (1) vs=0 and (2) dvs/dt=0 of the work of E transistorlike, thereby while making the voltage and current difference on transistor, occur, eliminated due to the loss that discharges and recharges (1/2) CV2 bringing, transistor ideal efficiency reaches 100%.
The Power Control Problem of E power-like amplifier, is determined by E class A amplifier A own characteristic.According to its operation principle, Optimal Control mode is to change the supply voltage Vdd that is connected to L1.But in actual applications, be difficult to provide so variable supply voltage, therefore need to increase LDO module in circuit design.Not only increased chip area, and LDO circuit exists efficiency, himself need to consume a part of power consumption, thereby has caused the reduction of E power-like amplifier in whole power stage scope internal efficiency.Except the method, the realization of the control function of power of the E power-like amplifier of exporting for low-power at present, there is no effective method.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of E power-like amplifier digital power control circuit that is applied to low-power output that can improve output power range and power output efficiency, there is circuit structure simple and reliable, be easy to the integrated advantage of monolithic integrated circuit.。
For achieving the above object, the technical scheme that the utility model proposes is a kind of high efficiency variable gain E class radio-frequency power amplifier, comprise for realizing the intervalve matching circuit of the effective cascade of amplifier and the output amplifier stage amplifying for signal power, the output of intervalve matching circuit is connected with output amplifier stage input, on the input of intervalve matching circuit, be connected with the controlled amplifying stage for pre-amplification function and signal amplitude gain control, the input of intervalve matching circuit is connected with the output of controlled amplifying stage; On the input of output amplifier stage, be connected with for regulating the bias control circuit of the gate bias voltage that enters into output amplifier stage switching transistor, the input of output amplifier stage is connected with the output of bias control circuit by inductance.
On described controlled amplifying stage, be connected with gain control bit 2, realize the gain of input signal and control.When gain control bit 2 is high level, signal gain increases, and power output rises, and vice versa.
On described bias control circuit, be connected with biasing control bit 1 and biasing control bit 0, realize the control of signal dutyfactor.When biasing control bit 1/0 is high high level, signal dutyfactor increases, and power output rises, and vice versa.
By the level of combinatorially varying control bit 2, control bit 1 and control bit 0, can realize power output in the control in a big way.As shown in Figure 4, when three control words are made as " 000 ", power amplifier output minimum power; When three control words are made as " 111 ", power amplifier Maximum Power Output.Table 1 has been listed eight kinds of states of three control words.
The state table of three control words of table 1
| Sequence | Control | Control bit | 2 | Control bit 1 | Control bit 0 |
| 1 | 000 | 0 | 0 | 0 | |
| 2 | 001 | 0 | 0 | 1 | |
| 3 | 010 | 0 | 1 | 0 | |
| 4 | 011 | 0 | 1 | 1 | |
| 5 | 100 | 1 | 0 | 0 | |
| 6 | 101 | 1 | 0 | 1 | |
| 7 | 110 | 1 | 1 | 0 | |
| 8 | 111 | 1 | 1 | 1 |
Principle is as follows:
1, the amplitude of control switch tube grid input signal
As shown in Figure 3, by changing the control signal of controlled amplifying stage 1, be high level or low level, to control conducting and the cut-off of transistor M3, thereby changed the gain of first order driving amplifier, the signal amplitude of switching transistor SW that makes to enter into output amplifier stage (3) is adjustable.And the conducting resistance of switching transistor SW is relevant with the amplitude of input signal, simply can be expressed as:
μ wherein
nelectron mobility, C
oxbe MOS transistor gate capacitance, W, L are that grid width and the grid of MOS transistor are long, V
gsmOS transistor gate source voltage, V
thit is the threshold voltage of MOS transistor.Can find out: signal amplitude is higher, conducting resistance is less, and the power of E power-like amplifier loss is less, maximum thereby power output reaches, and realizes the control function of power output.
Controlled amplifying stage 1 is common in linear power amplifier, and power output is directly controlled.For this nonlinear amplifier of E class, because input signal only provides frequency and phase information, irrelevant with signal amplitude size, therefore the method that cannot utilize controlled amplifying stage 1 to change power gain changes power output.And in the present invention, the signal that utilizes 1 pair of controlled amplifying stage to enter into output amplifier stage 3 carries out voltage amplitude control, thus the conducting resistance size of change switching transistor SW, and then reach the object that nonlinear amplifier power is controlled.
2, the duty ratio of control switch tube grid input signal
By the theory of E power-like amplifier, derived and can be known, the value of E power-like amplifier laod network is relevant to duty ratio.When duty ratio has departed from after optimized 50% setting, power output can produce decline.As shown in Figure 3, change direct current biasing and control 4 size, can change the duty ratio that is input to output amplifier stage 3 signals.When duty ratio declines, power output declines.
The method of change bias voltage has a variety of, and the circuit theory diagrams of Fig. 3 have been used a kind of method of simple electric resistance partial pressure.Biasing is controlled 1 and is controlled disconnection and the conducting of 0 control switch S1 and S0 with biasing, thereby the resistance of different resistance sizes is linked in potential-divider network, has changed the size of the direct current biasing of output amplifier stage 3 switching transistors.
The method of electric resistance partial pressure, is usually used in determining the bias voltage of certain point in circuit.And in the present invention, utilize the function of its voltage-regulation, realize and controlling entering into the duty ratio of the signal of output amplifier stage 3.Utilize the input duty cycle of E power-like amplifier to change the influential characteristic of power output, thereby reach the object that nonlinear amplifier power is controlled.
The method of independent use amplitude control or Duty ratio control, through simulating, verifying, the excursion of power output is less, cannot meet such as systems such as radio sensing networks the requirement to output power.Adopt these two kinds of methods to carry out the control of power simultaneously, can realize the power adjustments of E power-like amplifier in a big way, keep higher efficiency simultaneously.
Beneficial effect: the utlity model has following advantage:
1, power regulating range is wide.Because the amplitude that combines is controlled and two kinds of control methods of Duty ratio control, the output power range of E power-like amplifier is expanded, can meet the requirement such as radio sensing network.With adopt LDO to be used for the E power-like amplifier that power controls to compare, in output power range and power output efficiency, be all significantly improved, as shown in Figure 4.
2 compare with original E power-like amplifier Poewr control method, and the circuit in the utility model is set up by control word, has realized the digital control function of power output.When three control words are made as " 000 ", power amplifier output minimum power; When three control words are made as " 111 ", power amplifier Maximum Power Output.Be convenient to circuit application in practice.
3 compare with original E power-like amplifier Poewr control method, and it is less that the circuit in the utility model increases circuit element, and circuit structure is simple and reliable, is easy to monolithic integrated circuit integrated.
Accompanying drawing explanation
Fig. 1 is the basic structure schematic diagram of E power-like amplifier;
Fig. 2 is the circuit block diagram of the two-stage E power-like amplifier of 3 bit digital controls;
Fig. 3 is the circuit theory diagrams of the two-stage E power-like amplifier of 3 bit digital controls;
Fig. 4 is the utility model and power output added efficiency (PAE) comparison diagram of original technology in different output power situation.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the utility model, the present embodiment is implemented take technical solutions of the utility model under prerequisite, should understand these embodiment and only for the utility model is described, be not used in restriction scope of the present utility model.
As shown in Figures 2 and 3, a kind of high efficiency variable gain E class radio-frequency power amplifier, comprise for realizing the intervalve matching circuit of the effective cascade of amplifier and the output amplifier stage amplifying for signal power, the output of intervalve matching circuit is connected with output amplifier stage input, on the input of intervalve matching circuit, be connected with the controlled amplifying stage for pre-amplification function and signal amplitude gain control, the input of intervalve matching circuit is connected with the output of controlled amplifying stage, on the input of output amplifier stage, be connected with for regulating the bias control circuit of the gate bias voltage that enters into output amplifier stage switching transistor SW, the input of output amplifier stage is connected with the output of bias control circuit by inductance L dc.
On bias control circuit, be connected with biasing control bit 1 and biasing control bit 0, realize the control of signal dutyfactor.On controlled amplifying stage, be connected with gain control bit 2, realize the gain of input signal and control.
Input signal tentatively amplifies through controlled amplifying stage, and its gain amplifier size can realize digital control.Signal after amplification obtains effective inter-stage signal by interstage matched and transmits, and is sent to output amplifier stage.The signal dutyfactor that is input to output amplifier stage can be adjusted by bias control circuit, thereby together with controlled amplifying stage, the power of output signal is reached to the numerically controlled object in certain limit.
Controlled amplifying stage by amplifying stage transistor M1, amplifying stage transistor M2 and amplifying stage transistor M3 and be connected in supply voltage Vdd and controlled amplifying stage output between the first inductance L s form.
Bias control circuit is by resistance pressure-dividing network and be connected in parallel on the first resistance R 1 in resistance pressure-dividing network and the first switch S 1 and the second switch S2 at the second resistance R 2 two ends forms.
Intervalve matching circuit consists of the first capacitor C 1, the second capacitor C 2 and the second inductance L t that form pin network.
Output amplifier stage consists of switching transistor SW, the 3rd capacitor C d that is connected in the 3rd inductance L 1, the drain electrode that is parallel to switching transistor SW and source electrode between supply voltage Vdd and switching transistor SW drain electrode, the 4th capacitor C 0 and the 4th inductance L 0 being series between switching transistor SW drain electrode and output loading RL.
Controlled amplifying stage consists of amplifying stage transistor M1, amplifying stage transistor M2 and amplifying stage transistor M3, and inductance L s is connected between supply voltage Vdd and the output of controlled amplifying stage.When gain control bit 2 is high level, transistor M3 conducting, it is large that gain becomes; When gain control bit 2 is low level, transistor M3 cut-off, gain reduces.Signal after pre-amplification entered the π type interstage matched 2 that capacitor C 1, C2 and Lt form, and entered into the grid of output amplifier stage 3 switching transistor SW.Output amplifier stage is by switching transistor SW, be connected in the inductance L 1 between supply voltage Vdd and switching transistor SW drain electrode, be parallel to the drain electrode of switching transistor SW and the capacitor C d of source electrode, the capacitor C 0 and the L0 that are series between switching transistor drain electrode and output loading RL form.Bias control circuit 4, by inductance L dc, is connected to the grid of switching transistor SW, by changing switching transistor SW direct grid current bias voltage, changes the signal dutyfactor that enters into switching transistor SW.Be embodied in: by biasing control bit 1 and biasing control bit 0, to being connected in parallel on the switch at resistance R 2 and R1 two ends, control.When switch S 1/S2 conducting, corresponding resistance R 1/R2 is linked in circuit, and bias voltage declines, and signal dutyfactor is reduced; When switch S 1/S2 disconnects, corresponding resistance R 1/R2 short circuit,, therefore bias voltage rises, signal dutyfactor is increased.Together with gain control bit 2, formed the two-stage E power-like amplifier that three bit digital are controlled.By emulation, show, this circuit can effectively be controlled power output, at-3dBm, to+9dBm, can effectively work, and has kept higher efficiency simultaneously.
Fig. 4 has shown E power-like amplifier power output (Pout) and corresponding power added efficiency (PAE) thereof by eda software emulation.Can find out, the power change method that the utility model provides is compared with former scheme (utilizing LDO to change supply voltage), and the in the situation that of identical power output, delivery efficiency has had significant raising, and saved the shared area of LDO circuit module, circuit cost is reduced.
Claims (3)
1. a high efficiency variable gain E class radio-frequency power amplifier, comprise for realizing the intervalve matching circuit of the effective cascade of amplifier and the output amplifier stage amplifying for signal power, the output of intervalve matching circuit is connected with output amplifier stage input, it is characterized in that: on the input of intervalve matching circuit, be connected with the controlled amplifying stage for pre-amplification function and signal amplitude gain control, the input of intervalve matching circuit is connected with the output of controlled amplifying stage; On the input of output amplifier stage, be connected with for regulating the bias control circuit of the gate bias voltage that enters into output amplifier stage switching transistor, the input of output amplifier stage is connected with the output of bias control circuit by inductance.
2. a kind of high efficiency variable gain E class radio-frequency power amplifier according to claim 1, is characterized in that: on described controlled amplifying stage, be connected with gain control bit 2, realize the gain of input signal and control.
3. a kind of high efficiency variable gain E class radio-frequency power amplifier according to claim 1, is characterized in that: on described bias control circuit, be connected with biasing control bit 1 and biasing control bit 0, realize the control of signal dutyfactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320115455.9U CN203457110U (en) | 2013-03-14 | 2013-03-14 | High-efficiency variable-gain class-E radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320115455.9U CN203457110U (en) | 2013-03-14 | 2013-03-14 | High-efficiency variable-gain class-E radio frequency power amplifier |
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| CN203457110U true CN203457110U (en) | 2014-02-26 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178793A (en) * | 2013-03-14 | 2013-06-26 | 苏州朗宽电子技术有限公司 | High-efficiency variable gain E-type radio frequency power amplifier |
| CN106936402A (en) * | 2015-12-31 | 2017-07-07 | 无锡华润矽科微电子有限公司 | Power control circuit |
| CN109245737A (en) * | 2018-10-22 | 2019-01-18 | 东南大学 | A kind of dynamic body bias E power-like amplifier |
| CN113328619A (en) * | 2021-05-28 | 2021-08-31 | 浙江大学 | Active bias power supply circuit of external bias radio frequency/microwave amplifier |
| CN115347871A (en) * | 2022-10-17 | 2022-11-15 | 成都嘉纳海威科技有限责任公司 | Continuous gain adjustable millimeter wave broadband drive amplifier |
-
2013
- 2013-03-14 CN CN201320115455.9U patent/CN203457110U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178793A (en) * | 2013-03-14 | 2013-06-26 | 苏州朗宽电子技术有限公司 | High-efficiency variable gain E-type radio frequency power amplifier |
| CN106936402A (en) * | 2015-12-31 | 2017-07-07 | 无锡华润矽科微电子有限公司 | Power control circuit |
| CN109245737A (en) * | 2018-10-22 | 2019-01-18 | 东南大学 | A kind of dynamic body bias E power-like amplifier |
| CN109245737B (en) * | 2018-10-22 | 2024-05-14 | 东南大学 | Dynamic body bias class E power amplifier |
| CN113328619A (en) * | 2021-05-28 | 2021-08-31 | 浙江大学 | Active bias power supply circuit of external bias radio frequency/microwave amplifier |
| CN115347871A (en) * | 2022-10-17 | 2022-11-15 | 成都嘉纳海威科技有限责任公司 | Continuous gain adjustable millimeter wave broadband drive amplifier |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140226 Termination date: 20210314 |