CN103178793A - High-efficiency variable gain E-type radio frequency power amplifier - Google Patents
High-efficiency variable gain E-type radio frequency power amplifier Download PDFInfo
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- CN103178793A CN103178793A CN2013100806051A CN201310080605A CN103178793A CN 103178793 A CN103178793 A CN 103178793A CN 2013100806051 A CN2013100806051 A CN 2013100806051A CN 201310080605 A CN201310080605 A CN 201310080605A CN 103178793 A CN103178793 A CN 103178793A
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Abstract
The invention discloses a high-efficiency variable gain E-type radio frequency power amplifier which comprises a controllable amplifier stage. The controllable amplifier stage is connected at an input end of an interstage matching circuit and is used for pre-expanding control of function and signal amplitude gain. The input end of the interstage matching circuit is connected with an output end of the controllable amplifier stage. An input end of an output amplifier stage is connected with a bias control circuit which is used for adjusting grid electrode bias voltage entering a switch transistor of the output amplifier stage. The input end of the output amplifier stage is connected with an output end of the bias control circuit through an inductor. According to the high-efficiency variable gain E-type radio frequency power amplifier, signal amplitude and a duty ratio control method are combined, and the purpose of control of output power of the nonlinear E-type power amplifier is achieved. Compared with an original E-type power amplifier power control method, output power range and output power efficiency are improved obviously.
Description
Technical field
The present invention relates to a kind of power amplifier, specifically variable gain E class radio-frequency power amplifier.
Background technology
The E power-like amplifier is proposed in 1975 first by people such as Sokal.The basic composition structure of circuit as shown in Figure 1, comprise: switching transistor SW(usually can adopt MOS transistor to drive its grid and realize switching function), the inductance L 1 that is connected with supply voltage, the capacitor C in parallel with switching transistor, series resonance is optimized reactance component jX(and is generally inductance in inductance L s and the Cs of operating frequency f0) and load impedance R.
The operation principle of E power-like amplifier is as shown in Figure 1, and during greater than the MOS transistor threshold voltage, transistor is operated in linear zone, is equivalent to the switch closure when input voltage, and because resistance ron between drain-source is very little, so vs is approximately 0; And when input voltage during less than threshold voltage, the field effect transistor cut-off is equivalent to switch disconnect, and is is 0.At this moment, C begins charging, causes that vs increases, and tuning network leaches first-harmonic from vs, be transferred on load resistance.When switch is again closed, satisfy two conditions (1) vs=0 and (2) dvs/dt=0 of the work of E transistorlike, thereby make the voltage and current on transistor not occur simultaneously, eliminated due to the loss that discharges and recharges (1/2) CV2 that brings, the transistor ideal efficiency reaches 100%.
The Power Control Problem of E power-like amplifier is determined by E class A amplifier A own characteristic.According to its operation principle, the Optimal Control mode is to change the supply voltage Vdd that is connected to L1.But in actual applications, be difficult to provide so variable supply voltage, therefore need to increase the LDO module in circuit design.Not only increased chip area, and there is efficiency in the LDO circuit, himself need to consume a part of power consumption, thereby has caused the reduction of E power-like amplifier in whole power stage scope internal efficiency.Except the method, at present for the realization of the control function of power of the E power-like amplifier of low-power output, there is no effective method.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the purpose of this invention is to provide a kind of E power-like amplifier digital power control circuit that is applied to low-power output that can improve output power range and power output efficient, have circuit structure simple and reliable, be easy to the integrated advantage of monolithic integrated circuit.。
For achieving the above object, technical scheme proposed by the invention is a kind of high efficiency variable gain E class radio-frequency power amplifier, comprise be used to the intervalve matching circuit of realizing the effective cascade of amplifier and be used for the output amplifier stage that signal power is amplified, the output of intervalve matching circuit is connected with the output amplifier stage input, be connected with the controlled amplifying stage for pre-amplification function and signal amplitude gain control on the input of intervalve matching circuit, the input of intervalve matching circuit is connected with the output of controlled amplifying stage; Be connected with the bias control circuit that enters into the gate bias voltage of output amplifier stage switching transistor for adjusting on the input of output amplifier stage, the input of output amplifier stage is connected with the output of bias control circuit by inductance.
Be connected with gain control bit 2 on described controlled amplifying stage, realize that the gain of input signal is controlled.When gain control bit 2 was high level, signal gain increased, and power output rises, and vice versa.
Be connected with biasing control bit 1 and biasing control bit 0 on described bias control circuit, realize the control of signal dutyfactor.When biasing control bit 1/0 was high high level, signal dutyfactor increased, and power output rises, and vice versa.
By the level of combinatorially varying control bit 2, control bit 1 and control bit 0, can realize that power output is in the control in a big way.As shown in Figure 4, when three control words are made as " 000 ", power amplifier output minimum power; When three control words are made as " 111 ", the power amplifier Maximum Power Output.Table 1 has been listed eight kinds of states of three control words.
The state table of three control words of table 1
| Sequence | Control word | Control bit 2 | Control bit 1 | Control bit 0 |
| 1 | 000 | 0 | 0 | 0 |
| 2 | 001 | 0 | 0 | 1 |
| 3 | 010 | 0 | 1 | 0 |
| 4 | 011 | 0 | 1 | 1 |
| 5 | 100 | 1 | 0 | 0 |
| 6 | 101 | 1 | 0 | 1 |
| 7 | 110 | 1 | 1 | 0 |
| 8 | 111 | 1 | 1 | 1 |
Principle is as follows:
1, the amplitude of control switch tube grid input signal
As shown in Figure 3, be high level or low level by the control signal that changes controlled amplifying stage 1, controlling conducting and the cut-off of transistor M3, thereby change the gain of first order driving amplifier, made the signal amplitude of the switching transistor SW that enters into output amplifier stage (3) adjustable.And the conducting resistance of switching transistor SW is relevant with the amplitude of input signal, simply can be expressed as:
Wherein
Electron mobility,
C ox The MOS transistor gate capacitance,
W,
LThe grid width and the grid that are MOS transistor are long,
V gs The MOS transistor gate source voltage,
V th It is the threshold voltage of MOS transistor.Can find out: signal amplitude is higher, and conducting resistance is less, and the power of E power-like amplifier loss is less, and is maximum thereby power output reaches, and realizes the control function of power output.
Controlled amplifying stage 1 is common in linear power amplifier, and power output is directly controlled.For this nonlinear amplifier of E class, irrelevant with the signal amplitude size because input signal only provides frequency and phase information, therefore the method that can't utilize controlled amplifying stage 1 to change power gain changes power output.And in the present invention, the signal that utilizes 1 pair of controlled amplifying stage to enter into output amplifier stage 3 carries out voltage amplitude to be controlled, thereby changes the conducting resistance size of switching transistor SW, and then reaches the purpose that nonlinear amplifier power is controlled.
2, the duty ratio of control switch tube grid input signal
Derived and can be known by the theory of E power-like amplifier, the value of E power-like amplifier laod network is relevant to duty ratio.After duty ratio had departed from optimized 50% setting, power output can produce decline.As shown in Figure 3, change direct current biasing and control 4 size, can change the duty ratio that is input to output amplifier stage 3 signals.When duty ratio descended, power output descended.
The method of change bias voltage has a variety of, and the circuit theory diagrams of Fig. 3 have used a kind of method of simple electric resistance partial pressure.Biasing is controlled 1 and is controlled disconnection and the conducting of 0 control switch S1 and S0 with biasing, thereby the resistance of different resistance sizes is linked in potential-divider network, has changed the size of the direct current biasing of output amplifier stage 3 switching transistors.
The method of electric resistance partial pressure is usually used in determining the bias voltage of certain point in circuit.And in the present invention, utilize the function of its voltage-regulation, realize the duty ratio of the signal that enters into output amplifier stage 3 is controlled.Utilize the input duty cycle of E power-like amplifier to change the influential characteristic of power output, thereby reach the purpose that nonlinear amplifier power is controlled.
The method of independent use amplitude control or Duty ratio control, through simulating, verifying, the excursion of power output is less, can't satisfy the requirement to output power such as systems such as radio sensing networks.Adopt simultaneously these two kinds of methods to carry out the control of power, can realize the power adjustments of E power-like amplifier in a big way, keep simultaneously higher efficient.
Beneficial effect: the present invention has the following advantages:
1, power regulating range is wide.Because the amplitude that combines is controlled and two kinds of control methods of Duty ratio control, make the output power range of E power-like amplifier enlarge, can satisfy the requirement such as radio sensing network.With adopt LDO to be used for the E power-like amplifier that power controls to compare, all be significantly improved on output power range and power output efficient, as shown in Figure 4.
2 compare with original E power-like amplifier Poewr control method, and the circuit in the present invention is set up by control word, has realized the digital control function of power output.When three control words are made as " 000 ", power amplifier output minimum power; When three control words are made as " 111 ", the power amplifier Maximum Power Output.Be convenient to circuit application in practice.
3 compare with original E power-like amplifier Poewr control method, and it is less that the circuit in the present invention increases circuit element, and circuit structure is simple and reliable, is easy to monolithic integrated circuit integrated.
Description of drawings
Fig. 1 is the basic structure schematic diagram of E power-like amplifier;
Fig. 2 is the circuit block diagram of the two-stage E power-like amplifier of 3 bit digital controls;
Fig. 3 is the circuit theory diagrams of the two-stage E power-like amplifier of 3 bit digital controls;
Fig. 4 is the present invention and power output added efficiency (PAE) comparison diagram of original technology in the different output power situation.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, the present embodiment is implemented under take technical solution of the present invention as prerequisite, should understand these embodiment and only be used for explanation the present invention and be not used in and limit the scope of the invention.
as shown in Figures 2 and 3, a kind of high efficiency variable gain E class radio-frequency power amplifier, comprise be used to the intervalve matching circuit of realizing the effective cascade of amplifier and be used for the output amplifier stage that signal power is amplified, the output of intervalve matching circuit is connected with the output amplifier stage input, be connected with the controlled amplifying stage for pre-amplification function and signal amplitude gain control on the input of intervalve matching circuit, the input of intervalve matching circuit is connected with the output of controlled amplifying stage, be connected with the bias control circuit that enters into the gate bias voltage of output amplifier stage switching transistor SW for adjusting on the input of output amplifier stage, the input of output amplifier stage is connected with the output of bias control circuit by inductance L dc.
Be connected with biasing control bit 1 and biasing control bit 0 on bias control circuit, realize the control of signal dutyfactor.Be connected with gain control bit 2 on controlled amplifying stage, realize that the gain of input signal is controlled.
Input signal tentatively amplifies through controlled amplifying stage, and its gain amplifier size can realize digital control.Signal after amplification obtains effective inter-stage signal transmission by interstage matched, is sent to output amplifier stage.The signal dutyfactor that is input to output amplifier stage can be adjusted by bias control circuit, thereby and controlled amplifying stage together, the power of output signal is reached numerically controlled purpose in certain limit.
Controlled amplifying stage is by cascade amplifying stage transistor M1, transistor M2 and transistor M3, and the first inductance L s that is connected between supply voltage Vdd and the output of controlled amplifying stage forms.
Bias control circuit is by resistance pressure-dividing network and be connected in parallel on the first resistance R 1 in resistance pressure-dividing network and the first switch S 1 and the second switch S2 at the second resistance R 2 two ends forms.
Intervalve matching circuit is made of the first capacitor C 1 that forms pin network, the second capacitor C 2 and the second inductance L t.
Output amplifier stage is made of switching transistor SW, the 3rd capacitor C d that is connected in the 3rd inductance L 1, the drain electrode that is parallel to switching transistor SW and source electrode between supply voltage Vdd and switching transistor SW drain electrode, the 4th capacitor C 0 and the 4th inductance L 0 that is series between switching transistor SW drain electrode and output loading RL.
Controlled amplifying stage is made of cascade amplifying stage M1, M2 and M3, and inductance L s is connected between supply voltage Vdd and the output of controlled amplifying stage.The control of gain is to realize by the width that changes common gate transistor, is embodied in: when gain control bit 2 was high level, transistor M3 conducting, gain became large; When gain control bit 2 is low level, transistor M3 cut-off, gain reduces.Signal after pre-amplification advanced the π type interstage matched 2 that capacitor C 1, C2 and Lt consist of, and entered into the grid of output amplifier stage 3 switching transistor SW.Output amplifier stage is by switching transistor SW, be connected in the inductance L 1 between supply voltage Vdd and switching transistor SW drain electrode, be parallel to the drain electrode of switching transistor SW and the capacitor C d of source electrode, the capacitor C 0 and the L0 that are series between switching transistor drain electrode and output loading RL consist of.Bias control circuit 4 is connected to the grid of switching transistor SW by inductance L t, by changing switching transistor SW direct grid current bias voltage, changes the signal dutyfactor that enters into switching transistor SW.Be embodied in: by biasing control bit 1 and biasing control bit 0, the switch that is connected in parallel on resistance R 2 and R1 two ends is controlled.When switch S 1/S2 conducting, corresponding resistance R 1/R2 is linked in circuit, and bias voltage descends, and makes signal dutyfactor reduce; When switch S 1/S2 disconnects, corresponding resistance R 1/R2 short circuit,, therefore bias voltage rises, make signal dutyfactor increase.Together with gain control bit 2, consisted of the two-stage E power-like amplifier that three bit digital are controlled.Show by emulation, this circuit can effectively be controlled power output, can effectively work to+9dBm scope at-3dBm, has kept simultaneously higher efficient.
Fig. 4 has shown E power-like amplifier power output (Pout) and corresponding power added efficiency (PAE) thereof by eda software emulation.Can find out, power change method provided by the invention is compared with former scheme (utilizing LDO to change supply voltage), in the situation that identical power output, delivery efficiency has had significant raising, and saved the shared area of LDO circuit module, made circuit cost reduce.
Claims (3)
1. high efficiency variable gain E class radio-frequency power amplifier, comprise be used to the intervalve matching circuit of realizing the effective cascade of amplifier and be used for the output amplifier stage that signal power is amplified, the output of intervalve matching circuit is connected with the output amplifier stage input, it is characterized in that: be connected with the controlled amplifying stage for pre-amplification function and signal amplitude gain control on the input of intervalve matching circuit, the input of intervalve matching circuit is connected with the output of controlled amplifying stage; Be connected with the bias control circuit that enters into the gate bias voltage of output amplifier stage switching transistor for adjusting on the input of output amplifier stage, the input of output amplifier stage is connected with the output of bias control circuit by inductance.
2. a kind of high efficiency variable gain E class radio-frequency power amplifier according to claim 1, is characterized in that: be connected with gain control bit 2 on described controlled amplifying stage, realize that the gain of input signal is controlled.
3. a kind of high efficiency variable gain E class radio-frequency power amplifier according to claim 1, is characterized in that: be connected with biasing control bit 1 and biasing control bit 0 on described bias control circuit, realize the control of signal dutyfactor.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| CN113225031A (en) * | 2021-04-06 | 2021-08-06 | 杭州小呈向医疗科技有限公司 | Medical radio frequency output power adjusting method and system |
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| CN101478289A (en) * | 2009-01-05 | 2009-07-08 | 东南大学 | E type power amplifier digital power control circuit applied on low power output |
| CN101478294A (en) * | 2008-01-03 | 2009-07-08 | 三星电机株式会社 | System and method for cascode switch power amplifier |
| US20090184769A1 (en) * | 2008-01-21 | 2009-07-23 | National Taiwan University | Negative-feedback type ultra-wideband signal amplification circuit |
| CN203457110U (en) * | 2013-03-14 | 2014-02-26 | 苏州朗宽电子技术有限公司 | High-efficiency variable-gain class-E radio frequency power amplifier |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478294A (en) * | 2008-01-03 | 2009-07-08 | 三星电机株式会社 | System and method for cascode switch power amplifier |
| US20090184769A1 (en) * | 2008-01-21 | 2009-07-23 | National Taiwan University | Negative-feedback type ultra-wideband signal amplification circuit |
| CN101478289A (en) * | 2009-01-05 | 2009-07-08 | 东南大学 | E type power amplifier digital power control circuit applied on low power output |
| CN203457110U (en) * | 2013-03-14 | 2014-02-26 | 苏州朗宽电子技术有限公司 | High-efficiency variable-gain class-E radio frequency power amplifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| CN113225031A (en) * | 2021-04-06 | 2021-08-06 | 杭州小呈向医疗科技有限公司 | Medical radio frequency output power adjusting method and system |
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Application publication date: 20130626 |