CN203434186U - LED chip and LED - Google Patents

LED chip and LED Download PDF

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Publication number
CN203434186U
CN203434186U CN201320534887.3U CN201320534887U CN203434186U CN 203434186 U CN203434186 U CN 203434186U CN 201320534887 U CN201320534887 U CN 201320534887U CN 203434186 U CN203434186 U CN 203434186U
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layer
electrode
contact
type semiconductor
type
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刘晶
叶国光
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Jiangmen Dslol Optical Electronic Lighting Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Devices (AREA)

Abstract

An LED chip comprises a substrate, and an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer which are covered on the substrate orderly. A part of region on the P-type semiconductor layer is removed until the N-type semiconductor layer is exposed, the exposed N-type semiconductor layer is equipped with an N-type electrode, and the region which is not removed on the P-type semiconductor layer is equipped with a P-type electrode. The P-type electrode comprises a first electrode contact layer on which a current blocking layer is arranged, the region on the P-type semiconductor layer except the region which is covered by the current blocking layer is equipped with a current diffusion layer, and the current blocking layer is equipped with a second electrode contact layer. The second electrode contact layer is equipped with a third electrode contact layer, the second electrode contact layer and the third electrode contact layer are used to wrap the current blocking layer and are in ohm contact with the current diffusion layer, and the third electrode contact layer is equipped with an electrode bonding wire layer of which the material is gold.

Description

A kind of LED chip and LED
Technical field
The utility model relates to a kind of diode chip, the structure of the electrode on especially a kind of LED chip and adopt the LED of this chip.
Background technology
So-called LED pipe (LED) is made P/N diode by the semiconductor material layer that possesses direct gap, and under thermally equilibrated condition, most electronics does not have enough energy to rise to conductive strips.Impose forward bias voltage drop, electrons rises to conductive strips again, and the original position of electronics on former valence bond band produce hole.Under suitable bias voltage, electronics, hole just can P/N save region (P-N Juction) in conjunction with and luminous, the electric current of power supply can constantly supplement electronics and hole to negative N type semiconductor and positive P type semiconductor, make electronics, hole in conjunction with and luminous being continued carries out.The luminous principle of LED is the combination in electronics and hole, and the energy of electron institute band discharges with the form of light, is called spontaneous radiation.The light that general LED emits is to belong to this type.
A traditional blue green light chip architecture as shown in Figure 1, can be divided into anodal solder joint 01, transparency electrode 02, eurymeric gallium nitride 03, luminescent layer 04, negative pole solder joint 05, minus gallium nitride 06, essential type gallium nitride buffering 07, Sapphire Substrate 8 compositions, its electrode structure is directly on eurymeric gallium nitride 03 and minus gallium nitride 06, to evaporate Cr gold-plated or that sputter is gold-plated, Pt, Au.The chip that adopts kind electrode structure is that must to use material be golden connecting line in encapsulation, and because common gold is bad, bonding wire quality is unreliable.
Summary of the invention
In order to overcome the deficiencies in the prior art, the utility model provides that a kind of packaging cost is low, the LED chip of bonding wire reliable in quality and adopt the LED of this chip.
The utility model solves the technological means that its technical problem adopts:
A kind of LED chip, comprise substrate, cover successively the n type semiconductor layer on substrate, luminescent layer and p type semiconductor layer, subregion on described p type semiconductor layer is removed to and appears n type semiconductor layer, on the described n type semiconductor layer appearing, be provided with N-type electrode, on described p type semiconductor layer, not removed region division has P type electrode, described P type electrode includes the first contact electrode layer, on described the first contact layer, be provided with current barrier layer, the region covering except current barrier layer on described p type semiconductor layer is to be outside equipped with current-diffusion layer, on described current barrier layer, be provided with the second contact electrode layer, on described the second contact electrode layer, be provided with third electrode contact layer, described the second contact electrode layer and third electrode contact layer wrap up described current barrier layer and with current-diffusion layer ohmic contact, on described third electrode contact layer, being provided with material is golden electrode bonding wire layer.
A kind of LED, comprise support, be installed on chip on support, be electrically connected to bonding wire and the solder joint of chip and support, cover the packing colloid of described support and chip, described chip comprises substrate, cover successively the n type semiconductor layer on substrate, luminescent layer and p type semiconductor layer, subregion on described p type semiconductor layer is removed to and appears n type semiconductor layer, on the described n type semiconductor layer appearing, be provided with N-type electrode, on described p type semiconductor layer, not removed region division has P type electrode, described P type electrode includes the first contact electrode layer, on described the first contact layer, be provided with current barrier layer, the region covering except current barrier layer on described p type semiconductor layer is to be outside equipped with current-diffusion layer, on described current barrier layer, be provided with the second contact electrode layer, on described the second contact electrode layer, be provided with third electrode contact layer, described the second contact electrode layer and third electrode contact layer wrap up described current barrier layer and with current-diffusion layer ohmic contact, on described third electrode contact layer, being provided with material is golden electrode bonding wire layer, described bonding wire and welding material are: Au, Al, Ag, Pd, the combined alloy of Cu or aforementioned two or more alloy material
The beneficial effects of the utility model are: the utility model adopts the first contact electrode layer plate successively, current barrier layer, current-diffusion layer, the second contact electrode layer, third electrode contact layer and finally on third electrode contact layer, by chemical method, plates the structure that material is golden electrode bonding wire layer.Because the quality of the electric current bonding wire layer that adopts the method to obtain is softer, good welding performance, when follow-up encapsulation, can select cheap bonding wire material if Al, Ag, Pd and Cu are to reduce costs, even if select Au, be that bonding wire also can form than the more reliable solder joint of existing electrode structure.
Accompanying drawing explanation
Fig. 1 is the structural representation of prior art LED die;
Fig. 2 is the Facad structure schematic diagram of bipolar electrode LED chip;
Fig. 3 is a kind of structural representation of Fig. 2 A-A directional profile;
Fig. 4 is the another kind of structural representation of Fig. 2 A-A directional profile;
Fig. 5 is the structural representation of single-electrode LED chip section;
Fig. 6 is bipolar electrode LED chip bonding wire structure schematic diagram;
Fig. 7 is bipolar electrode LED chip encapsulating structure schematic diagram;
Fig. 8 is single-electrode LED chip package structural representation.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Embodiment 1, and with reference to figure 2, Fig. 3 and Fig. 4, a kind of manufacture method of LED chip electrode, is included in and on substrate 1, grows successively n type semiconductor layer 2, luminescent layer 3 and p type semiconductor layer 4; Etched portions region on described p type semiconductor layer, removes p type semiconductor layer 4, the luminescent layer 3 in this region and bears n type semiconductor layer 2 to appearing; The n type semiconductor layer 2 appearing forms N-type electrode district 21, be used for making N-type electrode 22, not etched p type semiconductor layer 4 forms P type electrode district 41, be used for making P type electrode 42, the manufacture method of described P type electrode 42 comprises the following steps: 1) on described P type electrode district 41, need the region that makes P type electrode 42 to plate the first contact electrode layer 10 contacting with p type semiconductor layer 4 Fei Aomu; 2) on described the first contact electrode layer 10, plate current barrier layer 5; 3), on described P type electrode district 41, by the region of above-mentioned the first contact electrode layer 10 and current barrier layer 5 coverings, do not plated current-diffusion layer 6; 4) on described current barrier layer 5, plate the second contact electrode layer 11 with current-diffusion layer 6 ohmic contact; 5) on described the second contact electrode layer 11, plate third electrode contact layer 7; 6) on described third electrode contact layer, adopting chemical method to plate material is golden electrode bonding wire layer 8.
Specifically, select the LED epitaxial wafer of making, it comprises Sapphire Substrate 1, and in Sapphire Substrate 1, growth has n type semiconductor layer 2, the luminescent layer 3 of indium gallium nitrogen material and the p type semiconductor layer 4 of gallium nitride material of gallium nitride material.Etching part region on p type semiconductor layer 4, etch depth is through luminescent layer 2 to appearing n type semiconductor layer, and the n type semiconductor layer appearing is N-type electrode district 21, for making N-type electrode 22; And not etched region is P type electrode district 41 on p type semiconductor layer 4, for making P type electrode 42.Because material and the p type semiconductor layer of current barrier layer 5 are bonding unreliable, therefore when making current barrier layer 5, first, on P type electrode district 41, the region that proposes meter P type electrode 42 plates Ti or Cr or Al or Ag or Pt material, forms the first contact electrode layer 10; At this first contact electrode layer 10, plate TiO2 or Al2O3 or SiO2 or Si3N4 or ZnO again, form current barrier layer 5, thereby prevent from coming off because of the bad electrode that causes of adhesiveness of current barrier layer.Then on P type electrode district 41, by the region of above-mentioned the first contact electrode layer 10 and current barrier layer 5 coverings, do not plated current-diffusion layer 6.On current-diffusion layer 6, with Ti or Ni, cover described current barrier layer 5 as the second contact electrode layer 11 again, and on described the second contact electrode layer 11, plate Au or Pt or Cr or Wu or Pd as third electrode contact layer 7.Described the second contact electrode layer 11 and the described current barrier layer 5 of third electrode contact layer 7 parcel, and all form good ohmic contact with current-diffusion layer 6.Electric current flows to current-diffusion layer 6 by the second contact electrode layer 11 and third electrode contact layer 7, and current-diffusion layer 6 is more evenly diffused into electric current outside barrier layer 5 luminescent layer 3.The object of the second contact electrode layer 11 is also in order to be better attached to third electrode contact layer 7 on current barrier layer 5; And the object of plating third electrode contact layer 7 is in order to be golden electrode bonding wire layer 8 at following adopted chemical mode plating material, lure gold precipitation into thereon.Described chemical gilding is the principle of utilizing chemical reduction reaction, makes gold ion in solution become gold on third electrode contact layer and separates out, and key reaction equation is as follows:
R+H 2O→O X+H ++e
NaAu(SO 3) 2→Au ++Na ++2(SO 3) -
e+Au ++2e→Au
2H ++2e→H 2
But initial reaction stage is that gold ion and the metal replacement on third electrode contact layer in solution is preferential, and reduction reaction occurs thereafter again, and the gold of later separating out has the catalysis of oneself, reduces smoothly.
Be more than the manufacture method of the P electrode 42 of bipolar electrode LED chip, because N-type electrode district can not make current barrier layer 5 and current-diffusion layer 6, so the manufacture method of N electrode 22 can be slightly different with the method for P electrode 42.
With reference to figure 3, wherein a kind of method of the N of making electrode 22 is, on above-mentioned P type electrode district 41, make the described the 1st), the 2nd), the 4th), the 5th) the and 6th) in step process, be on P type electrode district 41, to plate the first contact electrode layer 10, current barrier layer 5, the second contact electrode layer 11, when third electrode contact layer 7 and electrode bonding wire layer 8, also on N-type electrode district 21, plate the first contact electrode layer 10 simultaneously, current barrier layer 5, the second contact electrode layer 11, third electrode contact layer 7 and electrode bonding wire layer 8, while only having the current-diffusion layer of making 6 technique, need on N-type electrode district 21, not form.Certainly, also can as shown in Figure 4, only on N electrode 22, add the combination that comprises electrode bonding wire layer 8 and third electrode contact layer 7; Or comprise that electrode bonding wire layer 8 adds the one or more combinations such as third electrode contact layer 7 and the second contact electrode layer 11.Like this, due to structure formation simultaneously in the technique of making P electrode 42 of N electrode 22, just can avoid the technique of covered with protective film protection N-type electrode district 21 in the process of making P electrode 42, technique is fairly simple.
The structure of the formed a kind of LED chip of electrode manufacturing method of a kind of LED chip of employing embodiment 1 is: comprise substrate 1, cover successively n type semiconductor layer 2, luminescent layer 3 and p type semiconductor layer 4 on substrate 1, subregion on described p type semiconductor layer 4 is removed to and appears n type semiconductor layer 2 formation N-type electrode districts 21, and on p type semiconductor layer 4, not removed region forms P type electrode district 41.On described P type electrode district 41, be provided with the first contact electrode layer 10, on described the first contact layer 10, be provided with current barrier layer 5, the region covering except current barrier layer 5 on described P type electrode district 41 is to be outside equipped with current-diffusion layer 6, on described current barrier layer 5, be provided with the second contact electrode layer 11, on described the second contact electrode layer 11, be provided with third electrode contact layer 7, described the second contact electrode layer 11 and third electrode contact layer 7 and current-diffusion layer 6 ohmic contact, it is golden electrode bonding wire layer 8 that material is set on described third electrode contact layer 11.On described N-type electrode district 21, being also provided with the first contact electrode layer 10, current barrier layer 5, the second contact electrode layer 11, third electrode contact layer 7 and material identical on described P type electrode district 41 is golden electrode bonding wire layer 8.
With reference to figure 6 and Fig. 7, the LED structure that the electrode manufacturing method of a kind of LED chip of employing embodiment 1 obtains after chip package is, comprise support 14, be installed on chip on support 14, be electrically connected to bonding wire 13 and the solder joint 12 of chip and support 14, cover the packing colloid 15 of described support and chip, described chip comprises substrate 1, cover successively the n type semiconductor layer 2 on substrate 1, luminescent layer 3 and p type semiconductor layer 4, subregion on described p type semiconductor layer 4 is removed to and appears n type semiconductor layer 2 formation N-type electrode districts 21, on p type semiconductor layer 4, not removed region forms P type electrode district 41.On described P type electrode district 41, be provided with the first contact electrode layer 10, on described the first contact layer 10, be provided with current barrier layer 5, the region covering except current barrier layer 5 on described P type electrode district 41 is to be outside equipped with current-diffusion layer 6, on described current barrier layer 5, be provided with the second contact electrode layer 11, on described the second contact electrode layer 11, be provided with third electrode contact layer 7, described the second contact electrode layer 11 and third electrode contact layer 7 and current-diffusion layer 6 ohmic contact, it is golden electrode bonding wire layer 8 that material is set on described third electrode contact layer 11.The material of described bonding wire 12 and solder joint 12 is: the combined alloy of Au, Al, Ag, Pd, Cu or aforementioned two or more alloy material.On described N-type electrode district 21, being also provided with the first contact electrode layer 10, current barrier layer 5, the second contact electrode layer 11, third electrode contact layer 7 and material identical on described P type electrode district 41 is golden electrode bonding wire layer 8.
Embodiment 2, method of the present utility model can also be applied on single electrode chip, when chip substrate is conductive structure, or on the chip of the method acquisition of application removal substrate, or apply other structures and cause substrate to have on the chip of conducting function, only need on p type semiconductor layer, make an electrode.With reference to figure 5, most of technique of embodiment 2 is identical with the technique of embodiment 1, difference is that embodiment 2 does not need etching p type semiconductor layer 4, luminescent layer 3 to negative n type semiconductor layer 2, do not need the n type semiconductor layer 4 appearing to form N-type electrode district 41, be the related process that does not need to make N electrode 22, the technique that only needs to make P electrode 42.
Specifically comprise, on substrate 1, grow successively n type semiconductor layer 2, luminescent layer 3 and p type semiconductor layer 4; On described p type semiconductor layer 4, need the region that makes P type electrode 42 to plate the first contact electrode layer 10 contacting with p type semiconductor layer 4 Fei Aomu; On described the first contact electrode layer 10, plate current barrier layer 5; On described p type semiconductor layer 4, by the region of above-mentioned the first contact electrode layer 10 and current barrier layer 5 coverings, do not plated current-diffusion layer 6; On described current barrier layer 5, plate the second contact electrode layer 11 with current-diffusion layer 6 ohmic contact; On described the second contact electrode layer 11, plate third electrode contact layer 7; On described third electrode contact layer, adopting chemical method to plate material is golden electrode bonding wire layer 8.The material of described the first contact electrode layer is: Ti or Cr or Al or Ag or Pt, the material of described current barrier layer is: TiO2 or Al2O3 or SiO2 or Si3N4 or ZnO.The material of described the second contact electrode layer is: Ti or Ni, the material of described third electrode contact layer is Au or Pt or Cr or Wu or Pd.
With reference to figure 5, the structure of the formed a kind of LED chip of electrode manufacturing method of a kind of LED chip of employing embodiment 2 is: comprise substrate 1, cover successively the n type semiconductor layer 2 on substrate 1, luminescent layer 3 and p type semiconductor layer 4, described p type semiconductor layer 4 is provided with the first contact electrode layer 10, on described the first contact layer 10, be provided with current barrier layer 5, the region covering except current barrier layer 5 on described p type semiconductor layer 4 is to be outside equipped with current-diffusion layer 6, on described current barrier layer 5, be provided with the second contact electrode layer 11, on described the second contact electrode layer 11, be provided with third electrode contact layer 7, described the second contact electrode layer 11 and third electrode contact layer 7 and current-diffusion layer 6 ohmic contact, it is golden electrode bonding wire layer 8 that material is set on described third electrode contact layer 11.The material of described the first contact electrode layer is: Ti or Cr or Al or Ag or Pt, the material of described current barrier layer is: TiO2 or Al2O3 or SiO2 or Si3N4 or ZnO.The material of described the second contact electrode layer is: Ti or Ni, the material of described third electrode contact layer is Au or Pt or Cr or Wu or Pd.
With reference to figure 8, the LED structure that the electrode manufacturing method of a kind of LED chip of employing embodiment 2 obtains after chip package is, comprise support 14, be installed on chip on support 14, be electrically connected to chip and support 14 bonding wire 13 and solder joint 12, cover the packing colloid 15 of described support and chip, chip is fixed on the conducting resinl 141 on support 14.Described chip comprises substrate 1, cover successively the n type semiconductor layer 2 on substrate 1, luminescent layer 3 and p type semiconductor layer 4, described p type semiconductor layer 4 is provided with the first contact electrode layer 10, on described the first contact layer 10, be provided with current barrier layer 5, the region covering except current barrier layer 5 on described p type semiconductor layer 4 is to be outside equipped with current-diffusion layer 6, on described current barrier layer 5, be provided with the second contact electrode layer 11, on described the second contact electrode layer 11, be provided with third electrode contact layer 7, described the second contact electrode layer 11 and third electrode contact layer 7 and current-diffusion layer 6 ohmic contact, it is golden electrode bonding wire layer 8 that material is set on described third electrode contact layer 11.The material of described bonding wire 12 and solder joint 12 is: the combined alloy of Au, Al, Ag, Pd, Cu or aforementioned two or more alloy material.

Claims (9)

1. a LED chip, comprise substrate, cover successively the n type semiconductor layer on substrate, luminescent layer and p type semiconductor layer, subregion on described p type semiconductor layer is removed to and appears n type semiconductor layer, on the described n type semiconductor layer appearing, be provided with N-type electrode, on described p type semiconductor layer, not removed region division has P type electrode, it is characterized in that: described P type electrode includes the first contact electrode layer, on described the first contact layer, be provided with current barrier layer, the region covering except current barrier layer on described p type semiconductor layer is to be outside equipped with current-diffusion layer, on described current barrier layer, be provided with the second contact electrode layer, on described the second contact electrode layer, be provided with third electrode contact layer, described the second contact electrode layer and third electrode contact layer wrap up described current barrier layer and with current-diffusion layer ohmic contact, on described third electrode contact layer, being provided with material is golden electrode bonding wire layer.
2. a kind of LED chip according to claim 1, is characterized in that: described N-type electrode comprises that the described third electrode layer identical with P type electrode and material are golden electrode bonding wire layer.
3. a kind of LED chip according to claim 2, is characterized in that: described N-type electrode also includes described first contact electrode layer, current barrier layer and second contact electrode layer identical with P type electrode.
4. a kind of LED chip according to claim 1, is characterized in that: the material of described the first contact electrode layer is: Ti or Cr or Al or Ag or Pt, the material of described current barrier layer is: TiO2 or Al2O3 or SiO2 or Si3N4 or ZnO.
5. a kind of LED chip according to claim 1, is characterized in that: the material of described the second contact electrode layer is: Ti or Ni, the material of described third electrode contact layer is Au or Pt or Cr or Wu or Pd.
6. a LED, comprise support, be installed on chip on support, be electrically connected to bonding wire and the solder joint of chip and support, cover the packing colloid of described support and chip, described chip comprises substrate, cover successively the n type semiconductor layer on substrate, luminescent layer and p type semiconductor layer, subregion on described p type semiconductor layer is removed to and appears n type semiconductor layer, on the described n type semiconductor layer appearing, be provided with N-type electrode, on described p type semiconductor layer, not removed region division has P type electrode, it is characterized in that: described P type electrode includes the first contact electrode layer, on described the first contact layer, be provided with current barrier layer, the region covering except current barrier layer on described p type semiconductor layer is to be outside equipped with current-diffusion layer, on described current barrier layer, be provided with the second contact electrode layer, on described the second contact electrode layer, be provided with third electrode contact layer, described the second contact electrode layer and third electrode contact layer wrap up described current barrier layer and with current-diffusion layer ohmic contact, on described third electrode contact layer, being provided with material is golden electrode bonding wire layer, described bonding wire and welding material are: Au, Al, Ag, Pd, the combined alloy of Cu or aforementioned two or more alloy material.
7. a kind of LED according to claim 6, is characterized in that: described N-type electrode comprises that described first contact electrode layer, current barrier layer, second contact electrode layer, third electrode layer and the material identical with P type electrode are golden electrode bonding wire layer.
8. a kind of LED chip according to claim 6, is characterized in that: the material of described the first contact electrode layer is: Ti or Cr or Al or Ag or Pt, the material of described current barrier layer is: TiO2 or Al2O3 or SiO2 or Si3N4 or ZnO.
9. a kind of LED chip according to claim 6, is characterized in that: the material of described the second contact electrode layer is: Ti or Ni, the material of described third electrode contact layer is Au or Pt or Cr or Wu or Pd.
CN201320534887.3U 2013-08-29 2013-08-29 LED chip and LED Expired - Lifetime CN203434186U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107275446A (en) * 2017-07-25 2017-10-20 厦门乾照光电股份有限公司 A kind of LED chip and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107275446A (en) * 2017-07-25 2017-10-20 厦门乾照光电股份有限公司 A kind of LED chip and preparation method thereof
CN107275446B (en) * 2017-07-25 2019-10-18 厦门乾照光电股份有限公司 A kind of LED chip and preparation method thereof

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