CN203434174U

CN203434174U - Light-transmitting thin film solar cell

Info

Publication number: CN203434174U
Application number: CN201320575291.8U
Authority: CN
Inventors: 吴文基; 郑泽文; 刘丽娟
Original assignee: Shenzhen Global Solar Energy Technology Co Ltd
Current assignee: Shenzhen Global Solar Energy Technology Co Ltd
Priority date: 2013-09-17
Filing date: 2013-09-17
Publication date: 2014-02-12
Anticipated expiration: 2023-09-17

Abstract

The utility model relates to a light-transmitting thin film solar cell. The light-transmitting thin film solar cell comprises packaging layer and a cell core plate arranged on the inner part of the packaging layer. The cell core plate comprises a transparent conductive film glass substrate, semiconductor layers and back electrode layers, wherein the semiconductor layers and the back electrode layers are arranged on the transparent conductive film glass substrate successively in the vertical direction. According to the utility model, the cost of the solar cell is low, and high-quality production of the large-area high-light-transmission thin film solar cell is realized.

Description

A kind of transparent thin-film solar cell

Technical field:

The utility model relates to a kind of silicon-film solar-cell, more specifically relates to a kind of transparent thin-film solar cell for BIPV.

Background technology:

Traditional silicon base thin film solar battery, does not generally have light transmission, and structure is: on the glass substrate with nesa coating, with PECVD deposition techniques one deck silica-base film photoelectric conversion layer, then evaporation back electrode forms central layer.A power brick is containing a plurality of sub-batteries, each sub-battery carries out internal series-connection to obtain higher output voltage by laser grooving and scribing, traditional making printing opacity silicon thin-film battery is through laser technology, sandblast, mechanical grinding, all to dispose again each functional layer after plated film, wherein the most commonly use laser technology (laser scribe) that silicon thin film and back electrode film are selectively removed from lighttight silicon-film solar-cell chip, light can see through the region being removed by laser like this, its light transmission is determined by the film area size being removed, the loss of light transmission and photoelectric conversion regions, both power output was worn to direct ratio.By this mode removing, manufacture light transmission film solar cell and have following several shortcoming:

1) to remove process slow for laser, limited the output of cell piece;

2) figure of laser treatment seems disunity;

3) remove the expensive high-performance laser processing system of process need;

For the 1st) and 3) bar, laser removing speed is subject to the restriction of power output, control platform movement speed etc., the diameter of the light transmission open pore at every turn removing is 30 μ m-500 μ m, the conventional amorphous silicon battery central layer that the breadth of the sub-cell widths of 20mm of take is 635 * 1245mm is example, a laser machine will make battery core board reach 20% light transmittance, and every knot battery needs minimum delineation 8 times.And will be adapted to whole production line processing procedure, need join 8 laser machines.

For the 2nd) bar, if generate the uniform pattern of location comparison more neat, laser " point ", will produce very large damage to photovoltaic module, cause the loss of excessive photovoltaic power output.

So that makes printing opacity needs a kind of better solar cell based on silicon thin film photovoltaic module.

Utility model content:

The purpose of this utility model is to provide a kind of transparent thin-film solar cell, and described solar cell cost is low, high quality of production large area high light transmittance thin film solar cell.

For achieving the above object, the utility model is by the following technical solutions: a kind of transparent thin-film solar cell, comprise wrapper and be arranged on the battery core board of wrapper inside, described battery core board comprises and on transparent conducting film glass substrate and vertical direction, is successively set on semiconductor layer and the dorsum electrode layer on described transparent conducting film glass substrate.

A kind of transparent thin-film solar cell that the utility model provides is provided with the unit at 8-20mm interval on the nesa coating TCO of described glass substrate, and the insulation resistance between described unit is 2M.

A kind of transparent thin-film solar cell that the utility model provides, described semiconductor layer is arranged in the unit at described interval.

Another preferred a kind of transparent thin-film solar cell that the utility model provides, described nesa coating TCO is tin indium oxide ITO film, fluorine doped indium tin oxide FTO film or Al-Doped ZnO AZO film.

The preferred a kind of transparent thin-film solar cell again that the utility model provides, described semiconductor layer is individual layer semiconductor layer, double-deck semiconductor layer or three-layer semiconductor layer, every layer of semiconductor equalizing is p-i-n structure, and affiliated semi-conducting material is silicon materials or the silicon materials that mix.

Another preferred a kind of transparent thin-film solar cell that the utility model provides, described dorsum electrode layer material is aluminum.

Another preferred a kind of transparent thin-film solar cell that the utility model provides, the part that described nesa coating TCO glass substrate is not provided with described semiconductor layer is printing opacity unit.

Another preferred a kind of transparent thin-film solar cell that the utility model provides, described wrapper comprises two glass and the ethylene-vinyl acetate copolymer EVA material layer that two glass is connected with described battery core board.

With immediate prior art ratio, the utility model provides technical scheme to have following excellent effect:

1, the solar cell in the utility model can directly be made amorphous silicon semiconductor layer and the back electrode film of large format;

2, in the utility model, battery production process is simple, but than the manufacture method of general solar cell, in output, improves a lot;

3, in the utility model, solar cell has reduced the both positive and negative polarity of its sub-battery and the short circuit phenomenon between each sub-battery;

4, the distribution pattern of the semiconductor layer on the utility model battery core board and dorsum electrode layer is unified;

5, solar cell of the present utility model is with low cost.

Accompanying drawing explanation

Fig. 1 is the structural representation of solar cell of the present utility model;

Fig. 2 is mask plate A schematic diagram of the present utility model;

Fig. 3 is mask plate B schematic diagram of the present utility model;

Wherein: 1-TCO glass substrate, 2-semiconductor layer, 3-dorsum electrode layer, 4-battery core board, 5-printing opacity unit.

Embodiment

Below in conjunction with embodiment, utility model is described in further detail.

Embodiment 1:

As Figure 1-3, this routine utility model transparent thin-film solar cell comprises wrapper and is arranged on the battery core board 4 of wrapper inside, and described battery core board 4 comprises and on nesa coating TCO glass substrate 1 and vertical direction, is successively set on semiconductor layer 2 and the dorsum electrode layer 3 in described nesa coating TCO glass substrate 1.Described dorsum electrode layer 3 materials are aluminum.

On the nesa coating TCO of described TCO glass substrate, be provided with the unit at 8-20mm interval, the insulation resistance between described unit is 2M.Described semiconductor layer 3 is arranged in the unit at described interval.

Described nesa coating TCO is tin indium oxide ITO film, fluorine doped indium tin oxide FTO film or Al-Doped ZnO AZO film.

Described semiconductor layer 3 is individual layer semiconductor layer, double-deck semiconductor layer or three-layer semiconductor layer, and every layer of semiconductor equalizing is p-i-n structure, and affiliated semi-conducting material is silicon materials or the silicon materials that mix.

The part that described nesa coating TCO glass substrate 1 is not provided with described semiconductor layer 3 is printing opacity unit 5.

Described wrapper comprises two glass and the ethylene-vinyl acetate copolymer EVA material layer that two glass is connected with described battery core board 4.

The described nesa coating TCO glass substrate 1 of described solar cell after the infrared laser delineation of 1064nm is by semiconductor layer 2 described in mask plate A and the long-pending method of plasma enhanced chemical vapor deposition method (PECVD); Described semiconductor layer 2 is selectively deposited on TCO film by mask plate A; On described semiconductor layer 2, by mask plate B evaporation or magnetron sputtering, prepare dorsum electrode layer 3 and form battery core board 4; Described dorsum electrode layer 3 is selectively deposited on semiconductor layer 2 by mask plate B.

Wherein in the present embodiment, the mask plate A:h1=h2=5mm of employing, d1=14mm, d2=7mm, d3=20mm, d4=17mm, dx=3mm, mask plate B:h1 '=h2 '=5mm, d1 '=15mm, d2 '=6mm, d3 '=20mm, d4 '=17mm, dx '=3mm.

The light transmittance of the transparent thin-film solar cell in the present embodiment is 10%.

Embodiment 2, in the present embodiment, and the mask plate A:h1=h2=5mm of employing, d1=14mm, d2=7mm, d3=20mm, d4=16mm, dx=4mm, mask plate B:h1 '=h2 '=5mm, d1 '=15mm, d2 '=6mm, d3 '=20mm, d4 '=16mm, dx '=4mm.

The light transmittance of the transparent thin-film solar cell in the present embodiment is 15%.

Finally should be noted that: above embodiment is only in order to illustrate that the technical solution of the utility model is not intended to limit, although the utility model is had been described in detail with reference to above-described embodiment, those of ordinary skill in the field are to be understood that: still can modify or be equal to replacement embodiment of the present utility model, and do not depart from any modification of the utility model spirit and scope or be equal to replacement, it all should be encompassed in the middle of this claim scope.

Claims

1. a transparent thin-film solar cell, comprise wrapper and be arranged on the battery core board of wrapper inside, it is characterized in that: described battery core board comprises and on transparent conducting film glass substrate and vertical direction, is successively set on semiconductor layer and the dorsum electrode layer on described transparent conducting film glass substrate.

2. a kind of transparent thin-film solar cell as claimed in claim 1, is characterized in that: on the nesa coating TCO of described glass substrate, be provided with the unit at 8-20mm interval, the insulation resistance between described unit is 2M.

3. a kind of transparent thin-film solar cell as claimed in claim 2, is characterized in that: described semiconductor layer is arranged in the unit at described interval.

4. a kind of transparent thin-film solar cell as claimed in claim 1 or 2, is characterized in that: described nesa coating TCO is tin indium oxide ITO film, fluorine doped indium tin oxide FTO film or Al-Doped ZnO AZO film.

5. a kind of transparent thin-film solar cell as claimed in claim 1, it is characterized in that: described semiconductor layer is individual layer semiconductor layer, double-deck semiconductor layer or three-layer semiconductor layer, every layer of semiconductor equalizing is p-i-n structure, and affiliated semi-conducting material is silicon materials or the silicon materials that mix.

6. a kind of transparent thin-film solar cell as claimed in claim 1, is characterized in that: described dorsum electrode layer material is aluminum.

7. a kind of transparent thin-film solar cell as claimed in claim 1, is characterized in that: the part that described nesa coating TCO glass substrate is not provided with described semiconductor layer is printing opacity unit.

8. a kind of transparent thin-film solar cell as claimed in claim 1, is characterized in that: described wrapper comprises two glass and the ethylene-vinyl acetate copolymer EVA material layer that two glass is connected with described battery core board.