CN105023958B - CIGS based thin film solar cell and preparation method thereof - Google Patents
CIGS based thin film solar cell and preparation method thereof Download PDFInfo
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- CN105023958B CN105023958B CN201510450126.3A CN201510450126A CN105023958B CN 105023958 B CN105023958 B CN 105023958B CN 201510450126 A CN201510450126 A CN 201510450126A CN 105023958 B CN105023958 B CN 105023958B
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- 239000010409 thin film Substances 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 226
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 29
- AKVPCIASSWRYTN-UHFFFAOYSA-N zinc oxygen(2-) silicon(4+) Chemical compound [Si+4].[O-2].[Zn+2].[O-2].[O-2] AKVPCIASSWRYTN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 210000001142 back Anatomy 0.000 claims abstract description 20
- 239000002131 composite material Substances 0.000 claims abstract description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 90
- 239000011787 zinc oxide Substances 0.000 claims description 45
- 229960001296 zinc oxide Drugs 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 238000005520 cutting process Methods 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 9
- 238000003475 lamination Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 7
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 5
- -1 aluminum selenium sulfur Chemical compound 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 4
- 239000005864 Sulphur Substances 0.000 claims description 3
- GQCYCMFGFVGYJT-UHFFFAOYSA-N [AlH3].[S] Chemical compound [AlH3].[S] GQCYCMFGFVGYJT-UHFFFAOYSA-N 0.000 claims description 3
- MOAPOQQDYQRCET-UHFFFAOYSA-N [Cu].[In].[Se]=S Chemical compound [Cu].[In].[Se]=S MOAPOQQDYQRCET-UHFFFAOYSA-N 0.000 claims description 3
- AINNHYSCPOKHAO-UHFFFAOYSA-N aluminum;selenium Chemical compound [Se]=[Al] AINNHYSCPOKHAO-UHFFFAOYSA-N 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005286 illumination Methods 0.000 abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 229910052750 molybdenum Inorganic materials 0.000 description 19
- 239000011733 molybdenum Substances 0.000 description 19
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 16
- 239000005361 soda-lime glass Substances 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 13
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 12
- 238000004062 sedimentation Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 9
- 238000010030 laminating Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910000928 Yellow copper Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 239000005038 ethylene vinyl acetate Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- LGERWORIZMAZTA-UHFFFAOYSA-N silicon zinc Chemical compound [Si].[Zn] LGERWORIZMAZTA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- MTCBSBWAJGPHEJ-UHFFFAOYSA-N [Se].[In]=S Chemical compound [Se].[In]=S MTCBSBWAJGPHEJ-UHFFFAOYSA-N 0.000 description 1
- IPCGGVKCDVFDQU-UHFFFAOYSA-N [Zn].[Se]=S Chemical compound [Zn].[Se]=S IPCGGVKCDVFDQU-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- HDERJYVLTPVNRI-UHFFFAOYSA-N ethene;ethenyl acetate Chemical compound C=C.CC(=O)OC=C HDERJYVLTPVNRI-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 150000002752 molybdenum compounds Chemical group 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002338 polyhydroxyethylmethacrylate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a kind of CIGS based thin film solar cell and preparation method thereof, including, substrate, cover the dorsum electrode layer of substrate surface, cover the light absorbing zone of dorsum electrode layer, cover the cushion of light absorbing zone, cover the transparency conducting layer of cushion, and cover the aluminum oxynitride silicon film of transparency conducting layer or the composite film forming is replaced by zinc oxide silicon film with silicon oxynitride film.Described aluminum oxynitride silicon film or composite film can effectively stop that the hydrone of outside enters inside hull cell, reduce the degree that thin-film solar cells efficiency declines；Antireflecting effect can be played simultaneously again, increase the light absorbing zone that incident illumination reaches battery, thus the short circuit current of hull cell can be increased.
Description
Technical field
The present invention relates to technical field of thin-film solar, more particularly, to a kind of CIGS based thin film solar cell and its
Preparation method.
Background technology
With the shortage of global warming, the deterioration of the ecological environment and conventional energy resource, more and more country starts energetically
Development solar utilization technique.Solar energy power generating is the clean energy resource of zero-emission, has safe and reliable, noiselessness, no dirt
Dye, resource are inexhaustible, the advantage such as the construction period is short, long service life, thus receive much concern.CIGS（CIGS）It is a kind of
The p-type semiconductor material of direct band gap, its absorptance is up to 105/cm, the thick CIGS thin-film of 2um just can absorb 90% with
On sunlight.The band gap of CIGS thin film from 1.04eV to 1.67eV in the range of continuously adjustabe, can achieve with solar spectrum
Good coupling.CIGS thin-film solar cell has low cost, stable performance, capability of resistance to radiation as hull cell of new generation
By force, the advantages of low light level also can generate electricity, its conversion efficiency is highest in thin-film solar cells, the conversion ratio more than 20%,
Therefore the country such as Japan, Germany, U.S. all puts into huge fund and is studied and industrialization.
The structure of current CIGS based thin film solar cell is：Substrate/molybdenum electrode layer/CIGS light absorbing zone/cadmium sulfide/
Zinc oxide/AZO film layer, this CIGS based thin film solar cell lamination is made solar module, in the sun of lamination
Meeting increasing continuously due to the aging series resistance causing in energy battery module, the increase of series resistance can lead to solaode
The decline of the efficiency of module.
The bonding layer material of solaode lamination generally selects ethylene vinyl acetate（EVA）, polyvinyl alcohol contracting fourth
Aldehyde（PVB）, polyethylene（PE）, polyethylene propylene copolymer or polyacrylamide（PA）, all contain few in these bonding layer materials
The moisture of amount.More and more select PVB in recent years as bonding layer material.The structure of the solar module after lamination
Understand, the AZO film layer in thin-film solar cells is directly contacted with tack coat, due to containing a small amount of moisture in tack coat, thin
In use, the hydrone in tack coat will diffuse into the interior of thin-film solar cells to film solar cell module
Portion, thus cause the decline of thin-film solar cells performance.
The top layer of traditional CIGS based thin film solar cell is AZO transparent conductive film layer, the material refraction of this AZO film layer
Rate is for the refractive index of glass substrate and air or relatively higher, and this will make incident illumination reach AZO film surface
The more light of Shi Huiyou is reflected back, and more light can not be had to be absorbed by the absorption layer, this can make thin-film solar cells
Short circuit current less.As shown in figure 1, the transparency conducting layer of traditional CIGS based thin film solar cell module（Electrode before i.e.
Layer）With binding material directly contacts such as PVB or EVA, this can make the water diffusion in binding material enter thin film solar electricity
Inside pond, it will lead to the decline of thin-film solar cells efficiency.
Existing preparation technology：It is the metal molybdenum electrode using magnetron sputtering deposition 550nm on soda-lime glass in a substrate
Layer；It is then used by laser and carry out P1 delineation；The thick copper and indium gallium with yellow copper structure of 2.0um is then formed on molybdenum electrode layer
Two selenium absorbed layers；Chemical bath is then adopted on light absorbing zone（CBD）Method deposits the CdS film layer of 40nm as cushion；
Adopt the intrinsic ZnO film layer of magnetron sputtering deposition 50nm on the buffer layer；It is then used by cutting stylus and carry out P2 delineation；Then intrinsic
The AZO film layer of magnetron sputtering deposition 600nm is adopted on ZnO film layer；It is then used by cutting stylus and carry out P3 delineation；Then PVB is adopted to make
For binding material, thin-film solar cells and another clean ultrawhite soda-lime glass are formed it into thin by laminating technology
Film solar cell module.By test, the short circuit current of thin-film solar cells is 27.7mA/cm2；Thin-film solar cells
The efficiency of module reduces about 25%.
Chinese patent CN101527332A discloses a kind of CIGS based thin film solar cell, the structure of this solaode
For：Glass/Mo/CIGS/nCdS/nZnO/n+ZnO:Al, this thin-film solar cells can obtain higher photoelectric transformation efficiency,
If but this thin-film solar cells is fabricated to after solar module through laminating technology, its photoelectric transformation efficiency will
Decline.Its reason is that lamination is often used PVB, EVA etc. as bonding layer material, contains a certain amount of water in these bonding layer materials
Point, after lamination, these hydrones will diffuse into the inside of thin-film solar cells, leads to the conversion of thin-film solar cells
The decline of efficiency.
The hull cell that is obtained from above-mentioned existing preparation technology is visible, and it is less efficient.
Content of the invention
The present invention completes to solve the above problems, and its object is to stop that the hydrone in tack coat expands
Dissipate the inside entering thin-film solar cells, more incident illuminations can be made again to enter into and inhaled by light absorbing zone inside hull cell
Receive, thus improving the conversion efficiency of CIGS based thin film solar cell.
In order to reach above-mentioned purpose, the invention provides a kind of CIGS based thin film solar cell it is characterised in that：Bag
Include, substrate, cover the dorsum electrode layer of substrate surface, cover the light absorbing zone of dorsum electrode layer, cover the cushion of light absorbing zone, cover
The transparency conducting layer of lid cushion, covers the overcoat of transparency conducting layer, and described overcoat is for aluminum oxynitride silicon film or by oxygen
Change the composite film that zinc silicon film replaces composition with silicon oxynitride film.
Further, described overcoat is aluminum oxynitride silicon film；Described aluminum oxynitride silicon film is in a thickness direction
Nitrogen element concentration is by the lateral opposite side step wise reduction near transparency conducting layer；In described aluminum oxynitride silicon film
Silicon is not less than 4 with the atomic ratio of aluminum:1.
Further, the thickness of described aluminum oxynitride silicon film is 20-200nm.Described light absorbing zone is CIGS
Film layer, Cu-In-Ga-Se-S film layer, copper indium gallium sulphur film layer, copper and indium gallium aluminum selenium film layer, copper and indium gallium aluminum selenium sulfur film layer, copper and indium gallium aluminum sulfur film
Layer, CIS film layer, copper indium selenium sulfide film layer, indium sulphur film layer or combinations thereof；Alkali element, institute is contained in described light absorbing zone
State and in light absorbing zone, also can contain antimony and/or bismuth element.
Further, between cushion and transparency conducting layer, one layer of insertion has the zinc oxide film of high resistivity, institute
State have high resistivity zinc oxide film be selected from intrinsic zinc oxide film layer, to have resistivity be mixing of 0.08 Ω cm to 95 Ω cm
Miscellaneous zinc oxide film or combinations thereof.
Further, present invention also offers another kind of CIGS based thin film solar cell, described overcoat is at least two
The composite film of layer, described composite film is replaced with least one layer of silicon oxynitride film by least one layer of zinc oxide silicon film
Composition；Zinc in described zinc oxide silicon film is not less than 1 with the atomic ratio of silicon:1；Nitrogen in described silicon oxynitride film and oxygen
Atomic ratio is not more than 1:1.
Further, the thickness of described composite film is 20-200nm.Can contain a small amount of in described composite film
Aluminium element.Described light absorbing zone be CIGS film layer, Cu-In-Ga-Se-S film layer, copper indium gallium sulphur film layer, copper and indium gallium aluminum selenium film layer,
Copper and indium gallium aluminum selenium sulfur film layer, copper and indium gallium aluminum sulfur film layer, CIS film layer, copper indium selenium sulfide film layer, indium sulphur film layer or their group
Close；Contain alkali element in described light absorbing zone, in described light absorbing zone, also can contain antimony and/or bismuth element.
Further, between cushion and transparency conducting layer, one layer of insertion has the zinc oxide film of high resistivity, institute
State have high resistivity zinc oxide film be selected from intrinsic zinc oxide film layer, to have resistivity be mixing of 0.08 Ω cm to 95 Ω cm
Miscellaneous zinc oxide film or combinations thereof.
The invention provides a kind of manufacture method of CIGS based thin film solar cell, including in a substrate surface deposition
Dorsum electrode layer, then carries out P1 delineation, is subsequently formed light absorbing zone and covers dorsum electrode layer, then buffer layer covers light absorbs
Layer, then deposition intrinsic zinc oxide film covering cushion, then carries out P2 delineation, and then the covering of deposition transparency conducting layer is intrinsic
Zinc oxide film, then carries out P3 delineation, and then depositing silicon oxynitride aluminum silicon film or deposition are by zinc oxide silicon film and nitrogen oxidation
The composite film that silicon film replaces composition covers transparency conducting layer.Described P3 scribing steps also can deposit aluminum oxynitride silicon fiml
Layer or deposited to be replaced with silicon oxynitride film after the composite film forming by zinc oxide silicon film and carry out.
Further, described P1 delineation refers to that the substrate having dorsum electrode layer to deposition by using laser is delineated, and makes
By with fine rule form remove dorsum electrode layer a part of being patterned（Form pattern 1）The first pattern step；Described P2
Delineation refers to by using cutting stylus or laser, the substrate having deposited cushion be delineated, by with shape in the first pattern step
The pattern becoming offsets ormal weight for reference position, removes intrinsic zinc oxide film layer, cushion and light absorbing zone with fine rule form
A part is being patterned（Form pattern 2）The second pattern step；Described P3 delineation refers to by using cutting stylus or laser pair
The substrate having deposited transparency conducting layer is delineated, by with the pattern being formed in the first pattern step or the second pattern step being
Reference position offsets ormal weight, removes light absorbing zone, cushion, intrinsic zinc oxide film layer and transparency conducting layer with fine rule form
A part is being patterned（Form pattern 3）The 3rd pattern step.
Further, described aluminum oxynitride silicon film, replaced with silicon oxynitride film by zinc oxide silicon film and form
Composite film is all using magnetically controlled sputter method deposition or vacuum deposition method deposition.
Further, described substrate is soda-lime glass, stainless sheet steel, polyimide plate, aluminium sheet or titanium sheet metal.
Further, insert one layer of dielectric material layer between substrate and dorsum electrode layer.Described dielectric material layer by
Silicon oxide, silicon nitride, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen oxidation zirconium, zirconium oxide, zirconium nitride, aluminium nitride,
Aluminium oxide, oxidation sial, aluminium silicon nitride, nitrogen oxidation sial, zinc tin oxide or their mixture composition；Described electrolyte material
The bed of material or the oxide of at least two elements, nitride or the nitrogen oxygen that are made up of at least one element in silicon, zirconium and titanium and molybdenum
Compound forms；When substrate is for glass substrate, described dielectric material layer can be by the alkali containing at least one of Li, K element
Filter layer substitutes, and this alkali filter layer comprises at least one element and tri- kinds of elements of Si, Al, O in Li, K.
Further, described dorsum electrode layer is molybdenum electrode layer, Ti electrode layer, chromium electrode layer or AZO transparency conducting layer；Described
A certain amount of oxygen can be contained in molybdenum dorsum electrode layer, in described molybdenum dorsum electrode layer, also can contain a certain amount of sodium.
Further, one layer of thin molybdenum sulfide film layer or sulfur selenizing molybdenum film layer can be deposited on dorsum electrode layer, then shape again
Become light absorbing zone.
Further, described cushion is selected from cadmium sulfide, zinc sulfide, zinc selenide, zinc sulfur selenide, zinc oxide, indium sulfide, selenium
Change indium, sulfur indium selenide, zinc-magnesium oxide or there is one of doping zinc-oxide film layer of high resistivity and/or two or more.
Further, described transparency conducting layer selects indium-doped tin oxide（ITO）, Zinc oxide doped aluminum (AZO), zinc oxide
Doped gallium (GZO), Zinc oxide doped indium (IZO), Zinc oxide doped boron (BZO), doped sno_2 fluorine (FTO), stannum oxide mix iodine,
One of doped sno_2 antimony (ATO) or Graphene and/or two or more.
Further, using binding material（As PVB, EVA etc.）CIGS based thin film solar cell is clean with another
Transparency carrier be laminated and CIGS based thin film solar cell module be obtained.
Compared with prior art the present invention has advantages below：
1st, the present invention passes through to deposit one layer of aluminum oxynitride silicon film or deposition over transparent conductive layer by zinc oxide silicon film
Replace the composite film of composition with silicon oxynitride film, can effectively stop tack coat after lamination（The materials such as PVB, EVA）In
Water diffusion enters into inside thin-film solar cells, thus reducing the journey that lamination rear film solar battery efficiency declines
Degree.
2nd, the present invention passes through to deposit one layer of aluminum oxynitride silicon film or deposition over transparent conductive layer by zinc oxide silicon film
Replace the composite film of composition with silicon oxynitride film, be effectively reduced the reflection of incident sunlight, make more incident optical energies
Get at the light absorbing zone reaching hull cell, thus the short circuit current of thin-film solar cells can be improved.
What the 3rd, the aluminum oxynitride silicon film of the present invention or replaced with silicon oxynitride film by zinc oxide silicon film was formed is compound
The deposition of film layer all can adopt magnetron sputtering deposition, easily realizes large area homogeneous film formation, its technique and the CIGS base film sun
The production technology of energy battery matches, and can carry out large-scale continuous production, production efficiency can be greatly improved, and will not produce simultaneously again
Toxic wastewater, thus can achieve green production, reduce production cost.
Brief description
The present invention is further illustrated in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is the structural representation of traditional CIGS based thin film solar cell module；
Fig. 2 is a kind of structural representation of the CIGS based thin film solar cell module of the present invention；
Fig. 3 is another kind of structural representation of the CIGS based thin film solar cell module of the present invention.
Description of reference numerals
1- substrate；2- dorsum electrode layer；3- light absorbing zone；4- cushion；5- intrinsic zinc oxide film layer；6- transparency conducting layer；
7-PVB or EVA film layer；8- transparency carrier；9- aluminum oxynitride silicon film；10- zinc oxide silicon film；11- silicon oxynitride film；
P1- pattern 1；P2- pattern 2；P3- pattern 3.
Specific embodiment
Here first illustrates, in the present invention, PVB refers to polyvinyl butyral resin, and EVA refers to ethene-vinyl acetate copolymerization
Thing, is not always the case in the entire disclosure and claim of the present invention.
With reference to specific embodiment, the present invention is described in detail.
As shown in Figures 2 and 3, it passes through transparent in thin-film solar cells the film solar battery module of the present invention
Depositing silicon oxynitride aluminum silicon film or replace, with silicon oxynitride film, the composite film forming by zinc oxide silicon film on conductive layer, can
Enter the inside of hull cell with the hydrone outside effective the stop, thus reducing the decline journey of thin-film solar cells efficiency
Degree；Meanwhile, the aluminum oxynitride silicon film of deposition or composite film can play antireflecting effect again, increase incident illumination and reach battery
Light absorbing zone, thus the short circuit current of hull cell can be increased.
The embodiment being below related to, is all to be sequentially depositing each film layer on clean substrate surface.
Embodiment 1
It is the metal molybdenum electrode layer using magnetron sputtering deposition 500nm on soda-lime glass in a substrate；It is then used by laser
Carry out P1 delineation；The thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.0um is then formed on molybdenum electrode layer；Connect
And chemical bath is adopted on light absorbing zone（CBD）Method deposits the CdS film layer of 50nm as cushion；Adopt magnetic on the buffer layer
The intrinsic ZnO film layer of control sputtering sedimentation 40nm；It is then used by cutting stylus and carry out P2 delineation；Then adopt magnetic on intrinsic ZnO film layer
The AZO film layer of control sputtering sedimentation 600nm；It is then used by cutting stylus and carry out P3 delineation；The nitrogen oxygen of 60nm is then deposited on AZO film layer
Change aluminum silicon film, Si in described aluminum oxynitride silicon film：Al=4:1（Atomic ratio）, close in described aluminum oxynitride silicon film
The side of AZO film layer comprises only nitrogen, in the side away from AZO film layer containing only aerobic；Then adopt PVB as binding material, will
Thin-film solar cells and another clean ultrawhite soda-lime glass, form it into thin-film solar cells mould by laminating technology
Block.
By test, the short circuit current of thin-film solar cells is 31.8mA/cm2；The effect of film solar battery module
Rate reduces about 12%.
Embodiment 2
It is the metal molybdenum electrode layer using magnetron sputtering deposition 550nm on soda-lime glass in a substrate；It is then used by laser
Carry out P1 delineation；The thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.0um is then formed on molybdenum electrode layer；Connect
And chemical bath is adopted on light absorbing zone（CBD）Method deposits the CdS film layer of 40nm as cushion；Adopt magnetic on the buffer layer
The intrinsic ZnO film layer of control sputtering sedimentation 50nm；It is then used by cutting stylus and carry out P2 delineation；Then adopt magnetic on intrinsic ZnO film layer
The AZO film layer of control sputtering sedimentation 600nm；It is then used by cutting stylus and carry out P3 delineation；The nitrogen oxygen of 20nm is then deposited on AZO film layer
Change aluminum silicon film, Si in described aluminum oxynitride silicon film：Al=9:1（Atomic ratio）, close in described aluminum oxynitride silicon film
The side N of AZO film layer：O=9：1（Atomic ratio）, in the side N away from AZO film layer：O=1：9（Atomic ratio）；Then PVB is adopted to make
For binding material, thin-film solar cells and another clean ultrawhite soda-lime glass are formed it into thin by laminating technology
Film solar cell module.
By test, the short circuit current of thin-film solar cells is 32.3mA/cm2；The effect of film solar battery module
Rate reduces about 15%.
Embodiment 3
It is the metal molybdenum electrode layer using magnetron sputtering deposition 550nm on soda-lime glass in a substrate；It is then used by laser
Carry out P1 delineation；The thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.2um is then formed on molybdenum electrode layer；Connect
And chemical bath is adopted on light absorbing zone（CBD）Method deposits the CdS film layer of 40nm as cushion；Adopt magnetic on the buffer layer
The intrinsic ZnO film layer of control sputtering sedimentation 50nm；It is then used by cutting stylus and carry out P2 delineation；Then adopt magnetic on intrinsic ZnO film layer
The AZO film layer of control sputtering sedimentation 600nm；It is then used by cutting stylus and carry out P3 delineation；The nitrogen of 200nm is then deposited on AZO film layer
Alumina silicon film layer, Si in described aluminum oxynitride silicon film：Al=49:1（Atomic ratio）, in described aluminum oxynitride silicon film
Side N near AZO film layer：O=4：1（Atomic ratio）, in the side N away from AZO film layer：O=1：4（Atomic ratio）；Then adopt
PVB, as binding material, thin-film solar cells and another clean ultrawhite soda-lime glass makes its shape by laminating technology
Become film solar battery module.
By test, the short circuit current of thin-film solar cells is 32.6mA/cm2；The effect of film solar battery module
Rate reduces about 10%.
Embodiment 4
It is the metal molybdenum electrode layer using magnetron sputtering deposition 550nm on soda-lime glass in a substrate；It is then used by laser
Carry out P1 delineation；The thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.0um is then formed on molybdenum electrode layer；Connect
And chemical bath is adopted on light absorbing zone（CBD）Method deposits the CdS film layer of 40nm as cushion；Adopt magnetic on the buffer layer
The intrinsic ZnO film layer of control sputtering sedimentation 40nm；It is then used by cutting stylus and carry out P2 delineation；Then adopt magnetic on intrinsic ZnO film layer
The AZO film layer of control sputtering sedimentation 600nm；It is then used by cutting stylus and carry out P3 delineation；The oxidation of 20nm is then deposited on AZO film layer
Zinc silicon film, Zn in described zinc oxide silicon film：Si=1:1（Atomic ratio）；The nitrogen of 40nm is then deposited on zinc oxide silicon film
Membranous layer of silicon oxide, N in described silicon oxynitride film：O=1：1（Atomic ratio）；Then adopt PVB as binding material, by thin film too
Sun energy battery and another clean ultrawhite soda-lime glass, form it into film solar battery module by laminating technology.
By test, the short circuit current of thin-film solar cells is 32.2mA/cm2；The effect of film solar battery module
Rate reduces about 11%.
Embodiment 5
It is the metal molybdenum electrode layer using magnetron sputtering deposition 550nm on soda-lime glass in a substrate；It is then used by laser
Carry out P1 delineation；The thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.2um is then formed on molybdenum electrode layer；Connect
And chemical bath is adopted on light absorbing zone（CBD）Method deposits the CdS film layer of 40nm as cushion；Adopt magnetic on the buffer layer
The intrinsic ZnO film layer of control sputtering sedimentation 40nm；It is then used by cutting stylus and carry out P2 delineation；Then adopt magnetic on intrinsic ZnO film layer
The AZO film layer of control sputtering sedimentation 600nm；It is then used by cutting stylus and carry out P3 delineation；The oxidation of 15nm is then deposited on AZO film layer
Zinc silicon film, Zn in described zinc oxide silicon film：Si=9:1（Atomic ratio）；The nitrogen of 15nm is then deposited on zinc oxide silicon film
Membranous layer of silicon oxide, N in described silicon oxynitride film：O=1：4（Atomic ratio）；Then redeposited 15nm on silicon oxynitride film
Zinc oxide silicon film, Zn in described zinc oxide silicon film：Si=9:1（Atomic ratio）；Then redeposited on zinc oxide silicon film
The silicon oxynitride film of 15nm, N in described silicon oxynitride film：O=1：5（Atomic ratio）；Then adopt PVB as binding material,
By thin-film solar cells and another clean ultrawhite soda-lime glass, thin-film solar cells are formed it into by laminating technology
Module.
By test, the short circuit current of thin-film solar cells is 33.1mA/cm2；The effect of film solar battery module
Rate reduces about 10%.
Embodiment 6
It is the metal molybdenum electrode layer using magnetron sputtering deposition 550nm on soda-lime glass in a substrate；It is then used by laser
Carry out P1 delineation；The thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.1um is then formed on molybdenum electrode layer；Connect
And chemical bath is adopted on light absorbing zone（CBD）Method deposits the CdS film layer of 30nm as cushion；Adopt magnetic on the buffer layer
The intrinsic ZnO film layer of control sputtering sedimentation 40nm；It is then used by cutting stylus and carry out P2 delineation；Then adopt magnetic on intrinsic ZnO film layer
The AZO film layer of control sputtering sedimentation 800nm；The zinc oxide silicon film of 15nm, described zinc oxide silicon fiml are then deposited on AZO film layer
Zn in layer：Si=9:1（Atomic ratio）；The silicon oxynitride film of 15nm, described silicon oxynitride are then deposited on zinc oxide silicon film
N in film layer：O=1：5（Atomic ratio）；Then on silicon oxynitride film redeposited 15nm zinc oxide silicon film, described zinc oxide
Zn in silicon film：Si=8:1（Atomic ratio）；Then on zinc oxide silicon film redeposited 15nm silicon oxynitride film, described nitrogen
N in membranous layer of silicon oxide：O=1：7（Atomic ratio）；It is then used by cutting stylus and carry out P3 delineation；Then adopt PVB as binding material, will
Thin-film solar cells and another clean ultrawhite soda-lime glass, form it into thin-film solar cells mould by laminating technology
Block.
By test, the short circuit current of thin-film solar cells is 31.9mA/cm2；The effect of film solar battery module
Rate reduces about 10.7%.
Pass through to deposit over transparent conductive layer nitrogen from the present invention that relatively can be seen that of embodiment and existing preparation technology
Alumina silicon film layer or replace, with silicon oxynitride film, the composite film forming by zinc oxide silicon film, can effectively reduce thin film
The decline degree of solar module efficiency；The short circuit current of thin-film solar cells can be increased simultaneously again.
Above in conjunction with accompanying drawing, the present invention is exemplarily described it is clear that the present invention implements is not subject to aforesaid way
Restriction, as long as employing the improvement of various unsubstantialities that method of the present invention design and technical scheme are carried out, or without changing
Enter and the design of the present invention and technical scheme are directly applied to other occasions, all within protection scope of the present invention.
Claims (10)
1. a kind of CIGS based thin film solar cell it is characterised in that：Including, substrate, cover the dorsum electrode layer of substrate surface, cover
The light absorbing zone of lid dorsum electrode layer, covers the cushion of light absorbing zone, covers the transparency conducting layer of cushion, covers electrically conducting transparent
The overcoat of layer, described overcoat is that aluminum oxynitride silicon film or replaced with silicon oxynitride film by zinc oxide silicon film is formed
Composite film.
2. CIGS based thin film solar cell according to claim 1 is it is characterised in that described overcoat is aluminum oxynitride
During silicon film；Described aluminum oxynitride silicon film Nitrogen element concentration in a thickness direction is by one lateral near transparency conducting layer
Opposite side step wise reduction；Silicon in described aluminum oxynitride silicon film is not less than 4 with the atomic ratio of aluminum:1.
3. CIGS based thin film solar cell according to claim 1 is it is characterised in that described overcoat is by zinc oxide
During the composite film that silicon film is formed with silicon oxynitride film alternate sequence, described composite film is by least one layer of zinc oxide silicon
Film layer replaces composition with least one layer of silicon oxynitride film；Zinc in described zinc oxide silicon film and the atomic ratio of silicon are not less than
1:1；Nitrogen in described silicon oxynitride film is not more than 1 with the atomic ratio of oxygen:1.
4. CIGS based thin film solar cell according to claim 1 is it is characterised in that the thickness of described overcoat is
20-200nm.
5. CIGS based thin film solar cell according to claim 1 is it is characterised in that described light absorbing zone is copper and indium gallium
Selenium film layer, Cu-In-Ga-Se-S film layer, copper indium gallium sulphur film layer, copper and indium gallium aluminum selenium film layer, copper and indium gallium aluminum selenium sulfur film layer, copper and indium gallium aluminum sulfur
Film layer, CIS film layer, copper indium selenium sulfide film layer, indium sulphur film layer or combinations thereof.
6. CIGS based thin film solar cell according to claim 1 is it is characterised in that further, cushion with
Between transparency conducting layer, one layer of insertion has the zinc oxide film of high resistivity, the described Zinc oxide film layer choosing with high resistivity
From intrinsic zinc oxide film layer, there is the doping zinc-oxide film layer that resistivity is 0.08 Ω cm to 95 Ω cm or combinations thereof.
7. a kind of manufacture method of CIGS based thin film solar cell is it is characterised in that comprise the steps：
Deposit dorsum electrode layer in substrate surface, then carry out P1 delineation, be subsequently formed light absorbing zone and cover dorsum electrode layer, then sink
Long-pending cushion covers light absorbing zone, and then deposition intrinsic zinc oxide film covers cushion, then carries out P2 delineation, then deposits
Transparency conducting layer covers intrinsic zinc oxide film layer, then carries out P3 delineation, and then deposition overcoat covers transparency conducting layer, described
Overcoat is aluminum oxynitride silicon film or is replaced, by zinc oxide silicon film, the composite film forming with silicon oxynitride film.
8. the manufacture method of CIGS based thin film solar cell according to claim 7 is it is characterised in that described P1 delineates
Refer to that the substrate having dorsum electrode layer to deposition by using laser is delineated, make by dorsum electrode layer is removed with fine rule form
A part is come the first pattern step to be patterned；Described P2 delineation refers to by using cutting stylus or laser to having deposited cushion
Substrate delineated, by with the first pattern step formed pattern be reference position offset ormal weight, with fine rule form
Remove a part of second pattern step to be patterned of intrinsic zinc oxide film layer, cushion and light absorbing zone；Described P3 carves
Draw and refer to by using cutting stylus or laser, the substrate having deposited transparency conducting layer be delineated, by with the first pattern step or
The pattern being formed in second pattern step offsets ormal weight for reference position, removes light absorbing zone, cushion, basis with fine rule form
Levy a part of the 3rd pattern step to be patterned of zinc oxide film and transparency conducting layer.
9. the manufacture method of CIGS based thin film solar cell according to claim 7 is it is characterised in that described nitrogen oxygen
Change aluminum silicon film, replaced the composite film forming with silicon oxynitride film by zinc oxide silicon film be all to adopt magnetically controlled sputter method
Deposition or vacuum deposition method deposition.
10. the manufacture method of CIGS based thin film solar cell according to claim 7 is it is characterised in that described CIGS
Based thin film solar cell is obtained CIGS based thin film solar cell module after lamination.
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| CN111048603B (en) * | 2019-12-16 | 2022-05-17 | 凯盛光伏材料有限公司 | Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof |
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| CN104882495A (en) * | 2015-05-07 | 2015-09-02 | 厦门神科太阳能有限公司 | Transparent conductive window layer for solar cell, and CIGS-base thin-film solar cell |
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