CN203399400U - High frequency substrate - Google Patents
High frequency substrate Download PDFInfo
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- CN203399400U CN203399400U CN201320508298.8U CN201320508298U CN203399400U CN 203399400 U CN203399400 U CN 203399400U CN 201320508298 U CN201320508298 U CN 201320508298U CN 203399400 U CN203399400 U CN 203399400U
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- microns
- high frequency
- metal layer
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- thermoplastic polyimide
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Abstract
The utility model aims to provide a high frequency substrate which has simple processing technology and can reduce high frequency signal loss and guarantee good dielectric properties of substrate materials by controlling the roughness of copper foil surfaces to meet use requirements of high frequency circuits. In a first scheme, the high frequency substrate comprises a first metal layer (1) and a second metal layer (3), between which a thermoplastic polyimide layer (2) is coated; the roughness Rz values of the surfaces of the first metal layer (1) and the second metal layer (3) adhering to the thermoplastic polyimide layer (2) are 0.4-1.0 micrometers. In a second scheme, the high frequency substrate comprises a first metal layer (1), one surface of which is coated with a thermoplastic polyimide layer (2); the roughness Rz value of the surface of the first metal layer (1) adhering to the thermoplastic polyimide layer (2) is 0.4-1.0 micrometers. The high frequency substrate can be applied to the electronic equipment substrate field.
Description
Technical field
The utility model relates to a kind of substrate, relates in particular to a kind of high frequency substrate.
Background technology
Electronic equipment high frequency is development trend, growing in wireless network, satellite communication especially, and information products move towards at a high speed and high frequency, and communication products move towards voice, video and the data normalization of the large fireballing wireless transmission of capacity.Therefore the new generation product of development all needs high frequency substrate, and satellite system, mobile phone receive the communication products such as base station and must apply high-frequency circuit board, in the coming years, must develop rapidly again, and high frequency substrate will wilderness demand.
Current domestic patent CN 103096612 A disclose a kind of high-frequency substrate structure, and this structure is comprised of metal level, adhesion coating, dielectric layer, adhesion coating, polyimide layer, metal level.This scheme is by being used fluorine resin to be used as the dielectric material of high frequency substrate, but it is bonding that fluorine resin need come with metal level or polyimide layer with adhesion coating, needs coating at least twice, complex process, and board structure is thicker, do not meet the trend that electronic product is light, thin, short, little.
Material as high-frequency circuit with tellite, requirement have following some: (1) dielectric constant (Dk) must be little and very stable, normally the smaller the better, the transfer rate of signal and the square root of material dielectric constant are inversely proportional to, and high-k easily causes signal transmission delay.(2) dielectric loss (Df) must be little, the quality that this major effect transmits to signal, and dielectric loss is less, and loss of signal is also less.(3) Copper Foil should reduce surface roughness as far as possible, owing to considering, transmits signal along with becoming high frequency, and electric current partly forms kelvin effect at copper foil surface, and copper foil surface roughness has a significant impact transmitting loss.(4) water absorption is low, water absorption is high will be subject to the time of tide to affect dielectric constant and dielectric loss.(5) other thermal endurance, anti-chemistry, impact strength, peel strength etc. also must be good.
Apply at present more and more wider glue-free substrate, mainly by polyimides, metal layer material, formed, polyimides itself has good dielectric property, but under the wet environment in processing and use procedure, remain in the moisture in baseplate material, can make the dielectric constant of baseplate material and dielectric loss increase.
Utility model content
Technical problem to be solved in the utility model is to overcome the deficiencies in the prior art, provide a kind of and reduce the loss of high-frequency signal by controlling copper foil surface roughness, guarantee the good dielectric property of baseplate material, meet high-frequency circuit and use, and the simple high frequency substrate of processing technology.
The first technical scheme that the utility model adopts is: it comprises the first metal layer and the second metal level, between described the first metal layer and described the second metal level, be coated with thermoplastic polyimide layer, the roughness Rz value of described the first metal layer and the one side of adhering mutually with described thermoplastic polyimide layer on described the second metal level is 0.4～1.0 micron.
The thickness of described the first metal layer and described the second metal level is 5～18 microns.
The thickness of described thermoplastic polyimide layer is 9～50 microns.
Described the first metal layer and described the second metal level are copper layer.
The thickness of described the first metal layer and described the second metal level is 5 microns, 9 microns, 12 microns or 18 microns.
The thickness of described thermoplastic polyimide layer is 9 microns, 12.5 microns, 20 microns, 25 microns, 38 microns or 50 microns.
The second technical scheme that the utility model adopts is: it comprises the first metal layer, in the one side of described the first metal layer, be coated with thermoplastic polyimide layer, the roughness Rz value of the one side of adhering mutually with described thermoplastic polyimide layer on described the first metal layer is 0.4～1.0 micron.
The thickness of described the first metal layer is 5～18 microns; The thickness of described thermoplastic polyimide layer is 9～50 microns.
The thickness of described the first metal layer is 5 microns, 9 microns, 12 microns or 18 microns, and the thickness of described thermoplastic polyimide layer is 9 microns, 12.5 microns, 20 microns, 25 microns, 38 microns or 50 microns.
Described the first metal layer is copper layer.
The beneficial effects of the utility model are: because the utility model comprises two metal layers or comprises the first metal layer, in the one side between two metal layers or at described the first metal layer, apply thermoplastic polyimide layer, in described two metal layers or the roughness Rz value of the one side of adhering mutually with described thermoplastic polyimide layer on described the first metal layer be 0.4～1.0 micron, so, the utility model is controlled the moisture absorption of baseplate material by controlling the roughness of metal level and polyimides contact-making surface, the dielectric property that reduce baseplate material are subject to the impact of wet environment, lower dielectric constant and dielectric loss is provided, can meet high-frequency circuit uses, and processing technology is simple.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment mono-;
Fig. 2 is the structural representation of the utility model embodiment bis-.
Embodiment
embodiment mono-:
As shown in Figure 1, the present embodiment specifically discloses a kind of high frequency substrate with double-level-metal layer.This substrate comprises the first metal layer 1 and the second metal level 3.Between described the first metal layer 1 and described the second metal level 3, be coated with thermoplastic polyimide layer 2.The roughness Rz value of described the first metal layer 1 and the one side of adhering mutually with described thermoplastic polyimide layer 2 on described the second metal level 3 is 0.4～1.0 micron.In the present embodiment, the roughness Rz value of the first metal layer and the second metal level is all taken as 0.85 micron.Two metal layers is copper layer (being Copper Foil).The thickness of described the first metal layer 1 and described the second metal level 3 is 5～18 microns.Concrete desirable 5 microns, 9 microns, 12 microns or 18 microns, or get the arbitrary value between 5～18 microns.The thickness of described thermoplastic polyimide layer 2 is 9～50 microns.Concrete desirable 9 microns, 12.5 microns, 20 microns, 25 microns, 38 microns or 50 microns, or get the arbitrary value between 9～50 microns.
embodiment bis-:
As shown in Figure 2, the present embodiment specifically discloses a kind of high frequency substrate with single-layer metal layer.The difference of this embodiment and embodiment mono-is, this high frequency substrate is one deck the first metal layer.On described the first metal layer, be coated with thermoplastic polyimide layer 2.The roughness Rz value of the one side of adhering mutually with described thermoplastic polyimide layer 2 on described the first metal layer 1 is 0.4～1.0 micron.In the present embodiment, the roughness Rz value of the first metal layer is taken as 0.85 micron.The thickness of described the first metal layer 1 is 5～18 microns.Concrete desirable 5 microns, 9 microns, 12 microns or 18 microns, or get the arbitrary value between 5～18 microns.The thickness of described thermoplastic polyimide layer 2 is 9～50 microns.Concrete desirable 9 microns, 12.5 microns, 20 microns, 25 microns, 38 microns or 50 microns, or get the arbitrary value between 9～50 microns.
Below, design comparison example 1, comparative example 2 and comparative example 3 contrast with embodiment mono-, and wherein only different in the roughness of metal level (being Copper Foil), other manufacturing process are the same.
Sample to embodiment and comparative example detects, and test item comprises peel strength and loss, and testing result is recorded in table one.
Table one
The different roughness of comparative example affects peel strength and the loss value of high frequency substrate, and roughness is too small, and metal level and the cohesive force between dielectric layer of high frequency substrate are inadequate, and peel strength does not reach instructions for use; Roughness is excessive, and loss also increases thereupon, and high frequency substrate of the present utility model is controlled between 0.4～1.0 micron the roughness of Copper Foil.
As shown in Table 1, high frequency substrate of the present utility model has lower loss under high frequency, can meet high-frequency circuit and use.
In sum, the utility model is by controlling the roughness of metal level matsurface, and then the surface smoothness of controlling thermoplastic polyimide and metal level bonding plane is controlled the moisture absorption of baseplate material, the dielectric property that reduce baseplate material are subject to the impact of wet environment, can obtain having and compared with low transmission loss, can meet high-frequency circuit and use, and the simple high frequency substrate of processing technology.
The utility model can be applicable to electronic device substrate field.
It should be noted that, above-mentionedly only with preferred embodiment, the utility model is illustrated, can not limit to interest field of the present utility model at this point, therefore in the situation that not departing from the utility model thought, the equivalence that the content of all utilization the utility model specifications and accompanying drawing part is carried out changes, and all reason is with being included within the scope of claim of the present utility model.
Claims (10)
1. a high frequency substrate, it is characterized in that: it comprises the first metal layer (1) and the second metal level (3), between described the first metal layer (1) and described the second metal level (3), be coated with thermoplastic polyimide layer (2), the roughness Rz value of described the first metal layer (1) and the one side of adhering mutually with described thermoplastic polyimide layer (2) on described the second metal level (3) is 0.4～1.0 micron.
2. a kind of high frequency substrate according to claim 1, is characterized in that: the thickness of described the first metal layer (1) and described the second metal level (3) is 5～18 microns.
3. a kind of high frequency substrate according to claim 1, is characterized in that: the thickness of described thermoplastic polyimide layer (2) is 9～50 microns.
4. a kind of high frequency substrate according to claim 1, is characterized in that: described the first metal layer (1) and described the second metal level (3) are copper layer.
5. a kind of high frequency substrate according to claim 2, is characterized in that: the thickness of described the first metal layer (1) and described the second metal level (3) is 5 microns, 9 microns, 12 microns or 18 microns.
6. a kind of high frequency substrate according to claim 3, is characterized in that: the thickness of described thermoplastic polyimide layer (2) is 9 microns, 12.5 microns, 20 microns, 25 microns, 38 microns or 50 microns.
7. a high frequency substrate, it is characterized in that: comprise the first metal layer (1), in the one side of described the first metal layer (1), be coated with thermoplastic polyimide layer (2), the roughness Rz value of the one side of adhering mutually with described thermoplastic polyimide layer (2) on described the first metal layer (1) is 0.4～1.0 micron.
8. a kind of high frequency substrate according to claim 7, is characterized in that: the thickness of described the first metal layer (1) is 5～18 microns; The thickness of described thermoplastic polyimide layer (2) is 9～50 microns.
9. a kind of high frequency substrate according to claim 8, it is characterized in that: the thickness of described the first metal layer (1) is 5 microns, 9 microns, 12 microns or 18 microns, the thickness of described thermoplastic polyimide layer (2) is 9 microns, 12.5 microns, 20 microns, 25 microns, 38 microns or 50 microns.
10. a kind of high frequency substrate according to claim 7, is characterized in that: described the first metal layer (1) is copper layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320508298.8U CN203399400U (en) | 2013-08-20 | 2013-08-20 | High frequency substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320508298.8U CN203399400U (en) | 2013-08-20 | 2013-08-20 | High frequency substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203399400U true CN203399400U (en) | 2014-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320508298.8U Expired - Fee Related CN203399400U (en) | 2013-08-20 | 2013-08-20 | High frequency substrate |
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| Country | Link |
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| CN (1) | CN203399400U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103442511A (en) * | 2013-08-20 | 2013-12-11 | 珠海亚泰电子科技有限公司 | High frequency substrate |
| CN108454192A (en) * | 2017-02-17 | 2018-08-28 | 昆山雅森电子材料科技有限公司 | PI type high-frequency high-speed transmission Double-sided copper clad laminates and preparation method thereof |
| WO2021088353A1 (en) * | 2019-11-08 | 2021-05-14 | 南京中鸿润宁新材料科技有限公司 | Low-dielectric polyimide circuit board |
-
2013
- 2013-08-20 CN CN201320508298.8U patent/CN203399400U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103442511A (en) * | 2013-08-20 | 2013-12-11 | 珠海亚泰电子科技有限公司 | High frequency substrate |
| CN108454192A (en) * | 2017-02-17 | 2018-08-28 | 昆山雅森电子材料科技有限公司 | PI type high-frequency high-speed transmission Double-sided copper clad laminates and preparation method thereof |
| CN108454192B (en) * | 2017-02-17 | 2020-01-14 | 昆山雅森电子材料科技有限公司 | Double-sided copper foil substrate for PI type high-frequency high-speed transmission and preparation method thereof |
| WO2021088353A1 (en) * | 2019-11-08 | 2021-05-14 | 南京中鸿润宁新材料科技有限公司 | Low-dielectric polyimide circuit board |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140115 Termination date: 20180820 |