CN203385981U - Projector of structured light - Google Patents

Projector of structured light Download PDF

Info

Publication number
CN203385981U
CN203385981U CN201320073847.3U CN201320073847U CN203385981U CN 203385981 U CN203385981 U CN 203385981U CN 201320073847 U CN201320073847 U CN 201320073847U CN 203385981 U CN203385981 U CN 203385981U
Authority
CN
China
Prior art keywords
light
pattern
emitting component
projector
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
CN201320073847.3U
Other languages
Chinese (zh)
Inventor
Z·莫尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apple Inc
Original Assignee
Prime Sense Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prime Sense Ltd filed Critical Prime Sense Ltd
Application granted granted Critical
Publication of CN203385981U publication Critical patent/CN203385981U/en
Anticipated expiration legal-status Critical
Withdrawn - After Issue legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2513—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object with several lines being projected in more than one direction, e.g. grids, patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/106—Beam splitting or combining systems for splitting or combining a plurality of identical beams or images, e.g. image replication
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1086—Beam splitting or combining systems operating by diffraction only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
    • G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
    • G02B30/26—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type
    • G02B30/27—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type involving lenticular arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/50—Depth or shape recovery
    • G06T7/521—Depth or shape recovery from laser ranging, e.g. using interferometry; from the projection of structured light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Optical Distance (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The utility model discloses a projector of structured light. The projector of structured light comprises a semiconducting substrate and a monolithic array of light-emitting members which are distributed on the substrate in a manner of irregularity lattice two-dimensional patterns.

Description

The projector of structured light
Technical field
The present invention relates generally to optical device and optoelectronic device, and relates in particular to the equipment for the projection of pattern.
Background technology
Compact optical projector is used in various application.For example, such projector can be used for for the purpose of three-dimensional (3D) mapping (also referred to as depth map), the pattern of encoded light or structured light being projected on object.In this respect, U.S. Patent Application Publication 2008/0240502, it openly is merged in this paper by reference, has described a kind of light fixture, wherein, and light source, for example laser diode or LED, used optical radiation transillumination transparent substance, in order to pattern is projected on object.(in this manual and the term used in claims " light " and " light " typically refer to any and whole in visible ray, infrared ray and ultraviolet radiation.) image capture assemblies catches the image be projected to the pattern on object, and processor processes this image, in order to rebuild the 3D figure of this object.
PCT international publication WO2008/120217, it openly is merged in this paper by reference, has described the other aspect of the light fixture of the kind shown in the U.S. Patent Application Publication 2008/0240502 of mentioning in the above.In one embodiment, transparent substance comprises the lenticular array be arranged in non-uniform patterns.This lenticule produces the corresponding pattern of focus, and this pattern is projected on object.
In some applications, optical projector is by one or more diffraction optical elements (DOE) projected light.For example, U.S. Patent Application Publication 2009/0185274, it is open is merged in this paper by reference, has described the device for projection pattern, and this device comprises and is configured to together the diffraction input bundle in order to cover at least in part two DOE on a surface.The combination of DOE has reduced the intrafascicular energy of zeroth order (non-diffraction).In one embodiment, a DOE produces the pattern of a plurality of bundles, and the 2nd DOE as pattern generator on each of described bundle, to form diffraction pattern.Being arranged in U.S. Patent Application Publication 2010/0284082 of similar kind is described, open this paper that also is merged in by reference of this patented claim.
As another example, U.S. Patent Application Publication 2011/0188054, it openly is merged in this paper by reference, has described the photonic module that comprises optoelectronic components and optical element at single integration packaging.In one embodiment, integrated photonics module (IPM) comprises that this radiation source is disposed on substrate and on the direction perpendicular to this substrate and sends radiation with the radiation source of the form of the two-dimensional matrix of photovalve.Such IPM generally includes the transmitter of a plurality of parallel row, for example light emitting diode (LED) or vertical cavity surface-emitting laser (VCSEL) diode, and this has formed grid in X-Y plane.Radiation from transmitter is directed in optical module, and optical module comprises element and the projecting lens of suitable patterning, and projecting lens projects to resulting pattern on scene.
Summary of the invention
The embodiments of the present invention that are described hereinafter provide the improved Apparatus and method for for the projection of the light of patterning.
Therefore, according to one embodiment of the present invention, provide a kind of optoelectronic device, it comprises the monolithic array of semiconductor substrate and light-emitting component, and described light-emitting component is disposed on described substrate with the two-dimensional pattern of irregular lattice.
In disclosed embodiment, light-emitting component comprises vertical cavity surface-emitting laser (VCSEL) diode.
In some embodiments, the two-dimensional pattern of light-emitting component is uncorrelated pattern.
In one embodiment, light-emitting component comprises first and second groups of light-emitting components, wherein, described first and second groups are staggered and are arranged on substrate by corresponding the first and second patterns, and wherein said equipment comprises the first and second conductors, the first and second conductors are connected respectively separately to drive first and second groups of light-emitting components, make described equipment selectively by one or two utilizing emitted light in the first and second patterns.Described equipment also can comprise projection optical device and imaging device, projection optical device is configured to the light by the light-emitting component emission is projected on object, thereby imaging device is configured to catching the image of object with low-resolution mode when only having first group of light-emitting component to be actuated to utilizing emitted light to project on object by the low resolution pattern, thereby and be configured to when both being actuated to utilizing emitted light when first and second groups of light-emitting components high resolution design is projected to object the image with high resolution model seizure object.
In some embodiments, described equipment comprises projecting lens, projecting lens is installed on semiconductor substrate and is configured to gather and focuses on the light by light-emitting component emission, so that the light beam that projection contains the light pattern corresponding with the two-dimensional pattern of light-emitting component on substrate.Described equipment also can comprise diffraction optical element (DOE), and described DOE is installed on substrate and is configured to expand by the duplicate a plurality of adjacent one another are of generation pattern the light beam of institute's projection.Projecting lens and DOE can be formed on the opposite side of single optical substrate.
Alternatively, described equipment comprises single diffraction optical element (DOE), DOE is installed on semiconductor substrate and is configured to gather and focus on the light by the light-emitting component emission, so that the light beam that projection contains the light pattern corresponding with the two-dimensional pattern of light-emitting component on substrate, expand the light beam of institute's projection by the duplicate a plurality of adjacent one another are that produces this pattern simultaneously.
In addition, according to one embodiment of the present invention, provide a kind of method for the pattern projection, the method comprises producing to have the light beam that applies pattern thereon.This light beam is used projecting lens to be projected, in order to pattern is projected on the first area with first angular region in space.The field multiplier is employed to expand the light beam that is projected the lens projection, in order to pattern is projected to having than on the second area of the second angular region of the first angular region large at least 50% in space.
In addition, according to one embodiment of the present invention, provide a kind of method for the manufacture of optoelectronic device.Described method comprises to be provided semiconductor substrate and forms the monolithic array of light-emitting component with the two-dimensional pattern of irregular lattice on substrate.
From the following detailed description of embodiments of the present invention by reference to the accompanying drawings, the present invention will be understood more fully, in the accompanying drawings:
The accompanying drawing explanation
Fig. 1 is the schematic side elevation according to the 3D mapped system of one embodiment of the present invention;
Fig. 2 has formed the schematic top view of semiconductor element thereon according to the transmitter array of the patterning of one embodiment of the present invention;
Fig. 3 A-3C is the schematic side elevation of integrated projection optical module according to the embodiment of the present invention;
Fig. 4 A and Fig. 4 B are the front schematic view of the pattern by the projection optical module projection according to the embodiment of the present invention; And
Fig. 5 has formed the schematic top view of semiconductor element thereon according to the transmitter array of the patterning of optional embodiment of the present invention.
Embodiment
General introduction
In many optical projection application, pattern must be projected in the wide-angle scope.For example, in the 3D of the described kind be described in superincumbent background technology part mapping application, the pattern that often it is desirable for the light for creating mapping (map) should be projected in 90 ° or larger.In traditional optical design, reach rational optical quality and need to use expensive multicomponent projection optical device in such wide field (FOV) scope.For consumer's application, the two all may make the cost of such optical device and size prestige and step back, and the consumer applies the solution of the compact cheapness of common needs.
The some embodiments of the present invention that are described have hereinafter solved these demands by the field multiplier, the field multiplier is followed the projection optical device in optical train and is expanded the field of the required pattern of projection thereon, keeps the optical quality of the pattern of institute's projection simultaneously.The interpolation of field multiplier makes uses the projection optical device of compact cheapness to become possibility at wide regional extent inner projection pattern, and described projection optical device itself has relatively narrow FOV.
In disclosed embodiment, optical devices comprise electron gun, the light beam of electron gun pattern generation.The light beam of projecting lens projection pattern, and in the situation that there is no a multiplier, will project having on the given area corresponding with field of view (FOV) projecting lens certain angular region in space to pattern.(as in the context of this instructions and the term " lens " used, unless otherwise expressly noted, referring to unzoned lens and compound multicomponent lens in claims).Multiplier is inserted in the FOV of projecting lens---between lens and Zhong given area, space---and expand the bundle of institute's projection, and make pattern be projected onto having than on the zone of the angular region of the FOV of projecting lens large at least 50% in space.According to design, the bundle be expanded of following a multiplier can be the twice of FOV of projecting lens or even more.
In some embodiments, electron gun comprises the monolithic array of light-emitting component, the monolithic array of described light-emitting component by be applied to light beam on two-dimensional pattern corresponding to pattern be disposed on semiconductor substrate.
System is described
Fig. 1 is the schematic side elevation according to the 3D mapped system 20 of one embodiment of the present invention.System 20 is described to use an example of the field multiplier of the described kind be described below here, rather than by the mode of restriction.Similarly, principle of the present invention can be applicable in the optical projection system of other kind, and described optical projection system requires wide FOV and compactness and the low advantage of cost provided by disclosed embodiment can be provided.
System 20 comprises projecting subassembly 30, and projecting subassembly 30 projects to the bundle of patterning 38 on the surface of object 28---in this example, be the hand of system user.The image of the pattern of image-forming assembly 32 these lip-deep institute projections of seizure is also processed this image, in order to obtain this surperficial 3D figure.For this purpose, assembly 32 generally includes objective optics 40 and catches the imageing sensor 42 of image and process this image to generate the digital processing unit (not shown) of 3D mapping.The details of the picture catching of system 20 and processing aspect for example is being described in above mentioned U.S. Patent Application Publication 2010/0118123 and U.S. Patent Application Publication 2010/0007717, open this paper that is merged in by reference of these two publics announcement of a patent application.
Projecting subassembly 30 comprises beam generator 34 and a multiplier 36 of patterning, and beam generator 34 projections of patterning have the irradiation beam of the patterning of certain FOV, and the bundle of a multiplier 36 expansion institutes projection has the bundle 38 of the patterning of wider FOV with establishment.In this example, pattern comprises the luminous point random or high-contrast on black background that quasi-random is arranged, as what explained in the public announcement of a patent application of mentioning in the above.Alternatively, the pattern of any other suitable type (comprising image) can this form be projected.
Integrated pattern generator
The VCSEL array can be advantageously used in manufactures compact high-intensity light source and projector.In traditional VCSEL array, laser diode is disposed in regular lattice, for example, and such as the line grating pattern described in the U.S. Patent Application Publication 2011/0188054 of mentioning in the above, or the hexagonal lattice pattern.The two-dimensional pattern of the constant gap of (for example,, between the adjacent transmitter in the VCSEL array) between adjacent elements as the term " regular lattice " used in the context at this instructions and claims in referring to its pattern.Say in this sense term " regular lattice " and periodic lattice synonym.
The embodiments of the present invention that are described have hereinafter departed from this model, and as an alternative, the VCSEL array in the pattern that provides laser diode wherein to be disposed in irregular lattice.Optical device can be coupled, and being projected in space by the pattern of the light of the element of VCSEL array emission, becomes the pattern of corresponding point, the light that wherein each point comprises the corresponding laser diode emission in array.Usually (although optional), from the auto-correlation of the position of the laser diode of the function as transverse shift, the unessential this meaning of any displacement that is greater than the diode size is said, the pattern of the laser diode position in array and therefore the pattern of point be incoherent.Random, pseudorandom and quasi-periodic pattern is the example of such uncorrelated pattern.Therefore the light pattern be projected will be also incoherent.
The VCSEL array of this class patterning is used in particular for the pattern projection module of manufacturing integration, as described below.With the projector equipment be known in the art, compare, such module has the simple advantage of Design and manufacture, and can realize reducing and better performance of cost and size.
Fig. 2 is the schematic top view according to the optoelectronic device of one embodiment of the present invention, and it comprises semiconductor element 100, and the monolithic array of VCSEL diode 102 is formed on semiconductor element 100 by the two-dimensional pattern of irregular lattice.This array is formed on semiconductor substrate by the photoetching method of the identical type be known in the art with being used for manufacturing the VCSEL array, simultaneously suitable film layer structure forms laser diode, and conductor offers the laser diode 102 array by electric power and grounding connection from contact pad 104.
The irregular lattice arrangement of Fig. 2 realizes by the mask of suitable design simply, and photo etched mask is used to by any required two-dimensional pattern manufacturing array.Alternatively, the surface emitting element of other kind can be manufactured (although incoherent light source, as LED, may be not suitable for some pattern projection application) by this way similarly as the irregular array of light emitting diode (LED).
The monolithic VCSEL array of the described kind shown in Fig. 2 has advantages of high power extensibility.For example, use current technology, there is 0.3mm 2the tube core of effective coverage can comprise 200 transmitters, it has about 500mW or larger total luminous power output.VCSEL diode emission circular beam, and can be designed to the circular Gaussian beam that emission has single transverse mode, this is conducive to create high-contrast and highdensity dot pattern.Because the VCSEL emission wavelength is metastable as the function of temperature, so described dot pattern will be stable during operation equally, even without the effective cooling of array.
Fig. 3 A is that it comprises the VCSEL array according to the schematic side elevation of the integrated projection optical module 110 of one embodiment of the present invention, for example the array shown in Fig. 2.VCSEL tube core 100 is usually tested at wafer scale, and then is cut and is arranged on suitable stroma 114 together with suitable electrical connection 116,118.This electrical connection and possible control circuit (not shown) also can be coupled to tube core 100 by wire bonded conductor 122.
Be arranged on the lens 120 on the suitable spacer 122 of tube core top, gather and the output bundle of projection VCSEL transmitter.For temperature stability, can use glass lens.The diffraction optical element (DOE) 124 that is spaced apart device 126 location has created a plurality of duplicate 128 of pattern, and this duplicate 128 is fan out in the angular region of expansion.For example, DOE can comprise Damman grating or like, as described in the U.S. Patent Application Publication 2009/0185274 and 2010/0284082 of mentioning in the above.
Fig. 4 A is the front schematic view by the pattern 160 of the expansion of projection optical module 110 projections according to one embodiment of the present invention.The figure shows the fan-out pattern of the described kind created by DOE124.In this example, DOE has been extended to the bundle of institute's projection the array of 11 * 11 pieces 162, and described Kuai162 center is on axle 164 separately, although can produce alternatively the piece of more or less quantity.Each piece 162(in Fig. 4 A is due to pincushion distortion, and it has the foursquare shape of distortion) pattern that comprises bright spot 166, the pattern of bright spot 166 is the duplicate of the pattern of VCSEL array.
Usually, in this example, the fan-out angle between adjacent piece 162 is in the scope of 4-8 °.Suppose that each such piece for example comprises approximately 200 points in incoherent pattern, approximately 200 points are corresponding with approximately 200 laser diodes 102 in the VCSEL array for this, and 11 * 11 fan-out patterns 160 shown in Fig. 4 A will comprise more than 20,000 points.DOE124 is designed such that the duplicate of institute's projection of pattern covers the surface in (tile) space or regional, as for example described in the U.S. Patent Application Publication 2010/0284082.
Fig. 3 B is the schematic side elevation according to the integrated projection optical module 130 of optional embodiment of the present invention, and this module contains irregular VCSEL array, for example array shown in Fig. 2.In the present embodiment, the diffracted lens 130 of the refraction projection lens 120 of module 110 replace.Lens 130 and fan-out DOE134(are similar to DOE124) can be formed on the opposite side of same optical substrate 132.Although diffraction lens is responsive to wavelength variations, it is feasible that the relative stability of the wavelength of VCSEL element becomes this method.DOE134 is by form 138 protections that are arranged on spacer 140.
Fig. 3 C is the schematic side elevation according to the integrated projection optical module 150 of another embodiment of the invention, and this module contains irregular VCSEL array.Here, the function of diffraction lens and fan-out DOE is bonded in the single diffraction element 154 be formed on optical substrate 152, and optical substrate 152 is also as form.Element 154 is carried out and focused on and two functions of fan-out: it gathers and focuses on the light by the emission of the light-emitting component on tube core 100, so that the light beam that projection contains the light pattern corresponding with the two-dimensional pattern of light-emitting component on substrate, expand the light beam of institute's projection by the duplicate a plurality of adjacent one another are that produces pattern as implied above simultaneously.
At the assembly process of the module shown in Fig. 3 A-C, DOE above aims at four dimensions (X, Y, Z and rotation) with respect to VCSEL tube core 100 usually.The embodiment of 9B and 9C can be favourable aspect aligning, be accurate to approximately 1 μ m because be used to manufacture the two photoetching process of VCSEL array and DOE/ diffraction lens structure, thereby allow simply by the packaging passive alignment of coupling reference mark in X, Y and rotation.Due to the high precision of manufacturing, Z-aims at (that is, the distance between VCSEL tube core and DOE and lens) only needs movement among a small circle.Therefore Z-aims at can be had seedbed realize or may use for example Laser Scanning Confocal Microscope of height measuring equipment when the VCSEL array is in energising, for example, measures the distance between VCSEL surface and DOE surface and completes without seedbed.
The module of Fig. 3 A-C can be used as the pattern projector in 3D mapped system 20.The pattern of tiling (for example, be projected on interested object as shown in Figure 4 A), and image-forming module 32 catches the image of the pattern on object 28.As explained earlier, the processor be associated with image-forming module each some place measured pattern in image is shifted with respect to the partial lateral of known reference, and therefore based on this part displacement, finds the depth coordinate of that by triangulation.
Each duplicate of the pattern corresponding with in piece 162 in Fig. 4 A one is inner incoherent, but with adjacent piece, is height correlation usually.Because each duplicate of pattern comprises the point 166 that is distributed in the relatively small amount in relatively little angular region, so the transverse shift of the pattern on object is about the spacing of piece 162 or when larger than the spacing of piece 162, fuzzy possibility is arranged in depth coordinate.In order to reduce this ambiguity, VCSEL tube core 100 can be manufactured with the laser diode of larger quantity, and therefore the optical device of projection module can produce larger piece; But this solution has increased the two complicacy and cost of VCSEL tube core and optical device.
Fig. 4 B is the front schematic view according to the pattern of the expansion by the projection optical module projection 170 of the optional embodiment of the present invention that has solved the relevant issues between adjacent block.(the field multiplier based on DOE of Fig. 3 A and Fig. 3 B can be configured to produce the pattern the same with pattern 160 or 170 similarly.) fan-out DOE at the pattern of this staggered tiling shown in Fig. 4 B by suitable design produces.This design in, at least some in the piece in pattern with respect to adjacent piece by lateral excursion a side-play amount, this side-play amount is the part of described spacing.Particularly, in this example, piece 172 with respect to adjacent piece 174 by lateral excursion half-block.(suppose to only have the horizontal cross displacement to be used in depth survey, side-play amount is in vertical direction in this example).
Due to this side-play amount between piece, the scope of depth survey is clearly doubled effectively.Other is staggered, and wherein, adjacent piece has been shifted 1/3 or 1/4 of interblock distance, for example, can provide wider clear measurement.The DOE that provides these and other fan-out pattern can use methods known in the art for example the method based on the Gerchberg-Saxton algorithm be designed.
Fig. 5 has formed the schematic top view of semiconductor element 180 thereon according to the monolithic VCSEL array of another embodiment of the present invention.This array is similar to the array of Fig. 2, different, has two groups by independent conductor 186 and the 188 VCSEL diodes 182 and 184 that drive in the embodiment of Fig. 5.In the drawings, diode 182 and 184 is shown as has different shapes, but the difference of this shape is for visual clear, and in fact, all VCSEL diodes in two groups are of similar shape usually.
Two groups of VCSEL diodes 182 that illustrate in the drawings and 184 can with image-forming module 32(Fig. 1) in high-resolution image sensors 42 jointly use, to realize the zoom function in depth map system 20.For the independent line of electric force of described two group feeds can by the single metal level of VCSEL tube core for described two groups provide independent power traces, or realize by adding metal level, make each group by different layer feeds.Described two groups can contain the diode of identical or different quantity, and this depends on the required Performance Characteristics of system.Imageing sensor is assumed to support the pixel of adjacent detector element to merge (binning) (this take the resolution that reduces provide sensitivity and the speed of enhancing as cost), the cutting of sensing region and adjustable clock rate.These functions are provided by various commercially available imageing sensors.
Under the wide-angle pattern, a group (for example, diode 182) in two groups of VCSEL diodes receives electric power, and another group is disconnected.Therefore, the group be powered is can high power driven, is no more than total rated power of VCSEL tube core with the brightness that increases each point in pattern.(due to the effectively distance increase between adjacent transmitter under this pattern, this has reduced relevant thermal effect, so the higher power of each transmitter is possible.) simultaneously, imageing sensor 42 operates under the pixel merging patterns, and therefore form the low-resolution image of the whole visual field of system.Because the detector element of imageing sensor merged (bin), so this imageing sensor can at full speed catch and output image.Processor is measured the transverse shift of the pattern in this image, in order to produce initial low resolution depth map.
Processor is divisible and analyze described low resolution depth map, for example, in order to be identified in the potential interested object in visual field, human body.In this stage, processor can select to amplify interested object.For this purpose, processor powers on to all VCSEL diodes 182 and 184 in two groups, in order to produce high resolution design.Processor also indicating image sensor 42 operates under cutting (crop) pattern, so that the found zone therein of the interested object only in scanning field of view.In this stage, imageing sensor is read out with full resolution (in cropped zone) usually, and merges without pixel, and therefore imageing sensor can catch the high-definition picture of high resolution design.Owing to reading regional cutting, imageing sensor also can be with the high speed output image under high resolution model.Now, processor is measured the transverse shift of the pattern in this latter's image, in order to form the high-resolution depth map of interested object.
Embodiment described above optimally used the electric power resource of the pattern projector based on VCSEL and imageing sensor the detection resource the two.Under wide-angle pattern and these two patterns of zoom mode, the sweep velocity of imageing sensor and sensitivity can be adjusted (by pixel merging, cutting and clock rate adjustment) for usually with constant frame rate 30 frames/the provide second depth map of suitable resolution for example.
Although some embodiments in above-mentioned embodiment are specifically related to 3D based on pattern mapping, pattern described above projector can be used on equally the light that uses patterning other apply, comprise bis-kinds of imaging applications of 2D and 3D.Therefore, will understand, embodiment described above is cited by way of example, and the invention is not restricted to hereinbefore by the content that illustrates especially and describe.On the contrary, scope of the present invention be included in that the combination of described various features above and sub-portfolio the two and those skilled in the art will occur when reading foregoing description with undocumented its variation and modification in the prior art.

Claims (9)

1. the projector of a structured light, is characterized in that, comprising:
Semiconductor substrate; And
The monolithic array of light-emitting component, its two-dimensional pattern by irregular lattice is on described substrate.
2. the projector of structured light according to claim 1, wherein said light-emitting component comprises vertical cavity surface-emitting laser VCSEL diode.
3. the projector of structured light according to claim 1, the described two-dimensional pattern of wherein said light-emitting component is uncorrelated pattern.
4. the projector of structured light according to claim 1, wherein said light-emitting component comprises first group of light-emitting component and second group of light-emitting component, wherein said first group of light-emitting component and described second group of light-emitting component are staggered and are arranged on described substrate by corresponding the first pattern and the second pattern, and
The projector of wherein said structured light comprises the first conductor and the second conductor, and described the first conductor is connected respectively separately to drive described first group of light-emitting component and described second group of light-emitting component with described the second conductor.
5. the projector of structured light according to claim 4, and comprise:
Projection optical device, it is configured to the light by described light-emitting component emission is projected on object; And
Imaging device, it is configured to catch the image of described object.
6. the projector of structured light according to claim 1, and comprise projecting lens, described projecting lens is arranged on described semiconductor substrate and is configured to gather and focuses on the light by described light-emitting component emission, so that the light beam that projection contains the light pattern corresponding with the described two-dimensional pattern of described light-emitting component on described substrate.
7. the projector of structured light according to claim 6, and comprise diffraction optical element DOE, described diffraction optical element is installed on described substrate and is configured to the light beam that duplicate a plurality of adjacent one another are by producing described pattern is expanded institute's projection.
8. the projector of structured light according to claim 7, wherein said projecting lens and described DOE form on the opposite side of single optical substrate.
9. the projector of structured light according to claim 1, and comprise single diffraction optical element DOE, described diffraction optical element is installed on described semiconductor substrate and is configured to gather and focus on the light of being launched by described light-emitting component, so that the light beam that projection contains the light pattern corresponding with the described two-dimensional pattern of described light-emitting component on described substrate, expand the light beam of institute's projection by the duplicate a plurality of adjacent one another are that produces described pattern simultaneously.
CN201320073847.3U 2012-03-15 2013-02-17 Projector of structured light Withdrawn - After Issue CN203385981U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261611075P 2012-03-15 2012-03-15
US61/611,075 2012-03-15

Publications (1)

Publication Number Publication Date
CN203385981U true CN203385981U (en) 2014-01-08

Family

ID=49134511

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201510127630.XA Active CN104730825B (en) 2012-03-15 2013-02-17 Photoelectricity projection device
CN201320073847.3U Withdrawn - After Issue CN203385981U (en) 2012-03-15 2013-02-17 Projector of structured light
CN201310051693.2A Active CN103309137B (en) 2012-03-15 2013-02-17 Optoelectric equipments and method for producing same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201510127630.XA Active CN104730825B (en) 2012-03-15 2013-02-17 Photoelectricity projection device

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201310051693.2A Active CN103309137B (en) 2012-03-15 2013-02-17 Optoelectric equipments and method for producing same

Country Status (2)

Country Link
KR (3) KR20130105381A (en)
CN (3) CN104730825B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103309137A (en) * 2012-03-15 2013-09-18 普莱姆森斯有限公司 Projectors Of Structured Light
CN108388071A (en) * 2018-02-07 2018-08-10 深圳奥比中光科技有限公司 Depth camera and its projection module
CN108508624A (en) * 2018-03-12 2018-09-07 广东欧珀移动通信有限公司 Laser projection module and its detection method and device, depth camera and electronic device
CN108508688A (en) * 2018-03-12 2018-09-07 广东欧珀移动通信有限公司 Laser emitter, project structured light module, depth camera and electronic equipment
CN109143755A (en) * 2018-09-08 2019-01-04 深圳阜时科技有限公司 A kind of optical module, optical projection mould group, sensing device and equipment
CN111913305A (en) * 2020-07-28 2020-11-10 Oppo广东移动通信有限公司 Transmitting module, depth sensor and electronic equipment
US11563930B2 (en) 2018-03-12 2023-01-24 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Laser projection component, detection method thereof, and electronic device

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160025993A1 (en) * 2014-07-28 2016-01-28 Apple Inc. Overlapping pattern projector
US9258485B2 (en) * 2014-03-24 2016-02-09 Omnivision Technologies, Inc. Image sensor cropping images in response to cropping coordinate feedback
US20170142393A1 (en) * 2014-06-27 2017-05-18 Heptagon Micro Optics Pte. Ltd. Structured Light Imaging System and Method
KR20160089071A (en) 2015-01-19 2016-07-27 엘에스엠트론 주식회사 Hydro mechanical transmission
US9553423B2 (en) 2015-02-27 2017-01-24 Princeton Optronics Inc. Miniature structured light illuminator
TWI585467B (en) * 2015-08-28 2017-06-01 高準精密工業股份有限公司 Lighting apparatus with the corresponding diffractive optical elements
US20170082862A1 (en) 2015-09-23 2017-03-23 Stmicroelectronics (Research & Development) Limite Diffractive optical element and method for the design of a diffractive optical element
WO2017069954A1 (en) * 2015-10-21 2017-04-27 Princeton Optronics, Inc. Coded pattern projector
KR101892013B1 (en) 2016-05-27 2018-08-27 엘지전자 주식회사 Mobile terminal
WO2017204498A1 (en) * 2016-05-27 2017-11-30 엘지전자 주식회사 Mobile terminal
CN109716600A (en) * 2016-09-19 2019-05-03 苹果公司 The vertical transmitter being integrated on silicon control bottom plate
CN106569330B (en) * 2016-10-28 2019-07-12 深圳奥比中光科技有限公司 A kind of design method of optical design, area array projection device and a kind of depth camera
CN106444015A (en) * 2016-11-23 2017-02-22 青岛小优智能科技有限公司 MEMS (micro-electromechanical system) microvibration mirror based laser source structured light generation method and system
CN108336040A (en) * 2017-01-19 2018-07-27 深圳奥比中光科技有限公司 Chip flush mounting
CN108333856B (en) * 2017-01-19 2023-07-07 奥比中光科技集团股份有限公司 Optical projection device and depth camera using same
US10824054B2 (en) 2017-01-24 2020-11-03 Lg Electronics Inc. Mobile terminal
WO2018139790A1 (en) * 2017-01-24 2018-08-02 엘지전자 주식회사 Mobile/portable terminal
CN107085343B (en) * 2017-03-10 2019-07-12 深圳奥比中光科技有限公司 Structured light projecting device and depth camera
CN107039885B (en) * 2017-05-04 2023-04-18 奥比中光科技集团股份有限公司 Laser array applied to 3D imaging
CN106972347B (en) * 2017-05-04 2019-04-09 深圳奥比中光科技有限公司 Laser array for 3D imaging
CN106990660A (en) * 2017-05-09 2017-07-28 深圳奥比中光科技有限公司 Structured light projection module
CN107063124B (en) * 2017-06-01 2020-10-27 南京华捷艾米软件科技有限公司 Optical assembly and 3D measuring device
TWI752247B (en) * 2017-07-18 2022-01-11 新加坡商海特根微光學公司 Generating structured light
KR102464366B1 (en) * 2017-07-31 2022-11-07 삼성전자주식회사 Meta projector and electronic apparatus including the same
US10922828B2 (en) 2017-07-31 2021-02-16 Samsung Electronics Co., Ltd. Meta projector and electronic apparatus including the same
US10551614B2 (en) 2017-08-14 2020-02-04 Facebook Technologies, Llc Camera assembly with programmable diffractive optical element for depth sensing
US20200355494A1 (en) * 2017-08-28 2020-11-12 Heptagon Micro Optics Pte. Ltd. Structured light projection
US10586342B2 (en) 2017-08-31 2020-03-10 Facebook Technologies, Llc Shifting diffractive optical element for adjustable depth sensing resolution
US10153614B1 (en) * 2017-08-31 2018-12-11 Apple Inc. Creating arbitrary patterns on a 2-D uniform grid VCSEL array
CN107703641B (en) * 2017-09-08 2019-12-13 深圳奥比中光科技有限公司 structured light projection module and depth camera
CN107450190B (en) * 2017-09-08 2019-12-13 深圳奥比中光科技有限公司 Diffraction optical element and preparation method
CN109521578B (en) 2017-09-19 2021-02-26 奥比中光科技集团股份有限公司 Depth camera
CN107741682A (en) * 2017-10-20 2018-02-27 深圳奥比中光科技有限公司 Light sources project device
CN107908064A (en) * 2017-11-06 2018-04-13 深圳奥比中光科技有限公司 Structured light projection module, depth camera and the method for manufacturing structured light projection module
CN107748475A (en) 2017-11-06 2018-03-02 深圳奥比中光科技有限公司 Structured light projection module, depth camera and the method for manufacturing structured light projection module
CN109839792B (en) * 2017-11-25 2024-05-03 宁波舜宇光电信息有限公司 Structured light projection device with coded light, electronic device and application thereof
CN107968888A (en) * 2017-11-30 2018-04-27 努比亚技术有限公司 A kind of method for controlling mobile terminal, mobile terminal and computer-readable recording medium
CN108363267A (en) * 2018-02-14 2018-08-03 深圳奥比中光科技有限公司 The structured light projection module of regular array light source
US11525669B2 (en) 2018-02-27 2022-12-13 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Laser projection module, depth camera and electronic device
CN108493767B (en) * 2018-03-12 2019-09-27 Oppo广东移动通信有限公司 Laser generator, structured light projector, image obtain structure and electronic device
CN108303757B (en) * 2018-03-12 2020-07-10 Oppo广东移动通信有限公司 Laser projection module, depth camera and electronic device
CN108319035B (en) * 2018-03-23 2021-01-12 昆山丘钛微电子科技有限公司 Optical projection module and control method thereof
CN108594455B (en) * 2018-03-23 2019-12-13 深圳奥比中光科技有限公司 Structured light projection module and depth camera
CN108490635B (en) * 2018-03-23 2019-12-13 深圳奥比中光科技有限公司 Structured light projection module and depth camera
CN108594454B (en) 2018-03-23 2019-12-13 深圳奥比中光科技有限公司 Structured light projection module and depth camera
CN108594453B (en) * 2018-03-23 2019-12-13 深圳奥比中光科技有限公司 Structured light projection module and depth camera
CN108490634B (en) * 2018-03-23 2019-12-13 深圳奥比中光科技有限公司 Structured light projection module and depth camera
CN110398876A (en) * 2018-04-25 2019-11-01 三赢科技（深圳）有限公司 Bearing structure and forming method thereof and optical projection mould group
US10714891B2 (en) * 2018-07-06 2020-07-14 Himax Technologies Limited Projector, electronic device having projector and associated manufacturing method
US10345506B1 (en) * 2018-07-16 2019-07-09 Shenzhen Guangjian Technology Co., Ltd. Light projecting method and device
CN109186494A (en) * 2018-07-30 2019-01-11 深圳阜时科技有限公司 A kind of method for sensing
CN109031683A (en) * 2018-08-14 2018-12-18 深圳睿晟自动化技术有限公司 The active focus adjustment method of structured light projection mould group
JP7242846B2 (en) * 2018-10-12 2023-03-20 エレクトリック パワー リサーチ インスチテュート インコーポレイテッド Method for measuring surface properties in optically distorting media
US10690846B2 (en) * 2018-10-24 2020-06-23 Shenzhen Guangjian Technology Co., Ltd. Light projecting method and device
CN109471323A (en) * 2018-11-24 2019-03-15 深圳阜时科技有限公司 Projection arrangement and its light source and equipment
CN109541875B (en) * 2018-11-24 2024-02-13 深圳阜时科技有限公司 Light source structure, optical projection module, sensing device and equipment
CN109471319B (en) * 2018-11-24 2024-06-14 深圳阜时科技有限公司 Light source structure, optical projection module, sensing device and electronic equipment
CN109597211B (en) * 2018-12-25 2022-01-14 奥比中光科技集团股份有限公司 Projection module, depth camera and depth image acquisition method
CN109755861A (en) * 2018-12-27 2019-05-14 江西瑞坤科技发展有限公司 A kind of VCSEL array, laser projection device and 3D imaging device applied to 3D imaging
CN109521639A (en) * 2019-01-15 2019-03-26 深圳市安思疆科技有限公司 A kind of project structured light mould group and 3D imaging device without collimation lens
CN111522190B (en) * 2019-02-01 2022-03-11 无锡奥普顿光电子有限公司 Projection device based on surface emitting laser and manufacturing method thereof
CN110471081A (en) * 2019-04-30 2019-11-19 深圳市光鉴科技有限公司 3D imaging device and electronic equipment based on synchronous ToF discrete point cloud
CN110376754A (en) * 2019-07-26 2019-10-25 业成科技（成都）有限公司 Optical system polarization structure
CN111884049B (en) * 2020-04-26 2021-05-25 东莞埃科思科技有限公司 Dot matrix generation method and device, storage medium, electronic device and VCSEL array light source
CN116018880A (en) * 2020-08-27 2023-04-25 昕诺飞控股有限公司 Speckle illumination
CN113269180A (en) * 2021-07-06 2021-08-17 深圳博升光电科技有限公司 3D structured light recognition device, system and method
CN114002698A (en) * 2021-10-28 2022-02-01 Oppo广东移动通信有限公司 Depth camera, method for manufacturing light emitting module and terminal
WO2023232818A1 (en) * 2022-06-03 2023-12-07 Nil Technology Aps Optical elements providing collimation and fan-out or diffusion

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6144685A (en) * 1996-01-23 2000-11-07 Fuji Xerox Co., Ltd. Two-dimensional surface emitting laser array, two-dimensional surface emitting laser beam scanner, two-dimensional surface emitting laser beam recorder, and two-dimensional surface emitting laser beam recording method
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
US6734981B1 (en) * 2000-11-28 2004-05-11 Honeywell International Inc. Multiple laser optical systems and methods
JP4671793B2 (en) * 2005-07-22 2011-04-20 パナソニック株式会社 Semiconductor laser device and manufacturing method thereof
US8792978B2 (en) * 2010-05-28 2014-07-29 Lockheed Martin Corporation Laser-based nerve stimulators for, E.G., hearing restoration in cochlear prostheses and method
US8150142B2 (en) 2007-04-02 2012-04-03 Prime Sense Ltd. Depth mapping using projected patterns
KR101439434B1 (en) * 2007-10-05 2014-09-12 삼성전자주식회사 Image sensor and method of fabricating the same
EP2250818A1 (en) * 2008-02-08 2010-11-17 Koninklijke Philips Electronics N.V. Light module device
FR2932562B1 (en) * 2008-06-12 2010-08-27 Univ Pasteur LIGHT PROJECTION DEVICE STRUCTURED BY MEANS OF VCSEL AND PHASE DIFFRACTIVE OPTICAL COMPONENTS.
WO2010044943A2 (en) * 2008-07-25 2010-04-22 Cornell University Light field image sensor, method and applications
US20110187878A1 (en) * 2010-02-02 2011-08-04 Primesense Ltd. Synchronization of projected illumination with rolling shutter of image sensor
JP2011228553A (en) * 2010-04-21 2011-11-10 Hamamatsu Photonics Kk Semiconductor light-emitting element array
CN104730825B (en) * 2012-03-15 2019-04-02 苹果公司 Photoelectricity projection device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103309137A (en) * 2012-03-15 2013-09-18 普莱姆森斯有限公司 Projectors Of Structured Light
CN103309137B (en) * 2012-03-15 2015-05-20 苹果公司 Optoelectric equipments and method for producing same
CN108388071A (en) * 2018-02-07 2018-08-10 深圳奥比中光科技有限公司 Depth camera and its projection module
CN108388071B (en) * 2018-02-07 2024-03-08 奥比中光科技集团股份有限公司 Depth camera and projection module thereof
CN108508624A (en) * 2018-03-12 2018-09-07 广东欧珀移动通信有限公司 Laser projection module and its detection method and device, depth camera and electronic device
CN108508688A (en) * 2018-03-12 2018-09-07 广东欧珀移动通信有限公司 Laser emitter, project structured light module, depth camera and electronic equipment
US11563930B2 (en) 2018-03-12 2023-01-24 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Laser projection component, detection method thereof, and electronic device
CN109143755A (en) * 2018-09-08 2019-01-04 深圳阜时科技有限公司 A kind of optical module, optical projection mould group, sensing device and equipment
CN111913305A (en) * 2020-07-28 2020-11-10 Oppo广东移动通信有限公司 Transmitting module, depth sensor and electronic equipment
CN111913305B (en) * 2020-07-28 2022-11-08 Oppo广东移动通信有限公司 Transmitting module, depth sensor and electronic equipment

Also Published As

Publication number Publication date
KR102338174B1 (en) 2021-12-10
KR20130105381A (en) 2013-09-25
KR102231081B1 (en) 2021-03-23
KR20210032359A (en) 2021-03-24
CN104730825A (en) 2015-06-24
CN104730825B (en) 2019-04-02
KR20200043952A (en) 2020-04-28
CN103309137A (en) 2013-09-18
CN103309137B (en) 2015-05-20

Similar Documents

Publication Publication Date Title
CN203385981U (en) Projector of structured light
US11852463B2 (en) Projectors of structured light
CN105324631B (en) integrated structured light projector
US11320666B2 (en) Integrated structured-light projector
CN108957911B (en) Speckle structure light projection module and 3D degree of depth camera
CN105319811A (en) Overlapping pattern projector
JP6615867B2 (en) Small lighting system
US20100118123A1 (en) Depth mapping using projected patterns
JP5966467B2 (en) Ranging device
KR20140025292A (en) Measurement system of a light source in space
KR20140081159A (en) Measurement Device with a means of Width adjustment for line beam and cylinder lens
TW201732761A (en) Illumination modules and optoelectronic systems
CN209821387U (en) Laser imaging system based on triangular ranging
JP2015010987A (en) Pattern illumination device and distance measuring device
CN115102036B (en) Lattice laser emission structure, lattice laser system and depth calculation method
JP2020060377A (en) Multi-image projector and electronic device having multi-image projector
KR20140132044A (en) Device and method of obtaining image

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: APPLE COMPUTER, INC.

Free format text: FORMER OWNER: PRIME SENSE LTD.

Effective date: 20141023

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20141023

Address after: American California

Patentee after: Apple Computer, Inc.

Address before: Tel Aviv

Patentee before: Prime Sense Ltd.

AV01 Patent right actively abandoned

Granted publication date: 20140108

Effective date of abandoning: 20150520

AV01 Patent right actively abandoned

Granted publication date: 20140108

Effective date of abandoning: 20150520

RGAV Abandon patent right to avoid regrant