CN104730825A - Optoelectronic Device - Google Patents

Optoelectronic Device Download PDF

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Publication number
CN104730825A
CN104730825A CN201510127630.XA CN201510127630A CN104730825A CN 104730825 A CN104730825 A CN 104730825A CN 201510127630 A CN201510127630 A CN 201510127630A CN 104730825 A CN104730825 A CN 104730825A
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China
Prior art keywords
pattern
light
emitting component
vcsel
substrate
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CN201510127630.XA
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Chinese (zh)
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CN104730825B (en
Inventor
Z·莫尔
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Apple Inc
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Apple Computer Inc
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/106—Beam splitting or combining systems for splitting or combining a plurality of identical beams or images, e.g. image replication
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2513—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object with several lines being projected in more than one direction, e.g. grids, patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1086—Beam splitting or combining systems operating by diffraction only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
    • G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
    • G02B30/26—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type
    • G02B30/27—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type involving lenticular arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/50—Depth or shape recovery
    • G06T7/521—Depth or shape recovery from laser ranging, e.g. using interferometry; from the projection of structured light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

An optoelectronic device comprises a semiconducting substrate and a monolithic array of light-emitting members which are distributed on the substrate in a manner of irregularity lattice two-dimensional patterns.

Description

Optoelectronic device
The divisional application that the application is the applying date is on February 17th, 2013, denomination of invention is the Chinese patent application 201310051693.2 of " projector of structured light ".
Technical field
The present invention relates generally to optical device and optoelectronic device, and particularly relates to the equipment of the projection for pattern.
Background technology
Compact optical projector is used in various application.Such as, the object that such projector can be used for mapping (also referred to as depth map) in order to three-dimensional (3D) by the pattern projection of encoded light or structured light on object.In this respect, U.S. Patent Application Publication 2008/0240502, it is openly merged in herein by reference, describes a kind of light fixture, and wherein, light source, such as laser diode or LED, use optical radiation transillumination transparent substance, to be projected on object by pattern.(in this manual and term used in detail in the claims " light " and " light " to typically refer in visible ray, infrared ray and ultraviolet radiation any and whole.) image capture assemblies catches the image being projected to pattern on object, and this image of processor process, to rebuild the 3D figure of this object.
PCT international publication WO 2008/120217, it is open is merged in herein by reference, describe the kind shown in U.S. Patent Application Publication 2008/0240502 above-mentioned light fixture other in.In one embodiment, transparent substance comprises the lenticular array be arranged in non-uniform patterns.This lenticule produces the corresponding pattern of focus, and this pattern is projected on object.
In some applications, optical projector is by one or more diffraction optical element (DOE) projected light.Such as, U.S. Patent Application Publication 2009/0185274, it is open is merged in herein by reference, describes the device for projection pattern, and this device comprises and is configured to diffraction input bundle together to cover two DOE on a surface at least in part.The combination of DOE decreases the intrafascicular energy of zeroth order (non-diffraction).In one embodiment, a DOE produces the pattern of multiple bundle, and the 2nd DOE as pattern generator with described bundle each on form diffraction pattern.Being arranged in U.S. Patent Application Publication 2010/0284082 of similar kind is described, and the open of this patented claim is also merged in herein by reference.
As another example, U.S. Patent Application Publication 2011/0188054, it is openly merged in herein by reference, describes the photonic module comprising optoelectronic components and optical element at single integration packaging.In one embodiment, integrated photonics module (IPM) comprises with the radiation source of the form of the two-dimensional matrix of photovalve, and this radiation source to be disposed on substrate and to send radiation perpendicular on the direction of this substrate.Such IPM generally includes the transmitter of multiple parallel row, and such as light emitting diode (LED) or vertical cavity surface-emitting laser (VCSEL) diode, this defines grid in X-Y plane.Radiation from transmitter is directed in optical module, and optical module comprises element and the projecting lens of suitable patterning, and obtained pattern projects in scene by projecting lens.
Summary of the invention
The embodiments of the present invention be described hereinafter provide the Apparatus and method for of the improvement of the projection of the light for patterning.
Therefore, according to one embodiment of the present invention, provide a kind of optoelectronic device, it comprises the monolithic array of semiconductor substrate and light-emitting component, and described light-emitting component is arranged on the substrate with the two-dimensional pattern of irregular lattice.
In disclosed embodiment, light-emitting component comprises vertical cavity surface-emitting laser (VCSEL) diode.
In some embodiments, the two-dimensional pattern of light-emitting component is uncorrelated pattern.
In one embodiment, light-emitting component comprises first and second groups of light-emitting components, wherein, described first and second groups to be staggered by corresponding first and second patterns and to be arranged on substrate, and wherein said equipment comprises the first and second conductors, first and second conductors are connected respectively to separate driving first and second groups of light-emitting components, make described equipment selectively by one or two utilizing emitted light in the first and second patterns.Described equipment also can comprise projection optical device and imaging device, projection optical device is configured to the light launched by light-emitting component to project on object, imaging device is configured at the image catching object when only having first group of light-emitting component be actuated to utilizing emitted light thus projected on object by low resolution pattern in low resolution mode, and is configured to the image catching object when being both actuated to utilizing emitted light when first and second groups of light-emitting components thus high resolution design being projected to object with high resolution model.
In some embodiments, described equipment comprises projecting lens, projecting lens is mounted on a semiconductor substrate and is configured to gather and focuses on the light launched by light-emitting component, so that the light beam of projection containing the light pattern corresponding with the two-dimensional pattern of the light-emitting component on substrate.Described equipment also can comprise diffraction optical element (DOE), and described DOE is installed on substrate and projected light beam expanded by the duplicate multiple adjacent one another are be configured to by producing pattern.Projecting lens and DOE can be formed on the opposite side of single optical substrate.
Alternatively, described equipment comprises single diffraction optical element (DOE), DOE is mounted on a semiconductor substrate and is configured to gather and focus on the light launched by light-emitting component, so that the light beam of projection containing the light pattern corresponding with the two-dimensional pattern of the light-emitting component on substrate, projected light beam expanded by the duplicate multiple adjacent one another are simultaneously by producing this pattern.
In addition, according to one embodiment of the present invention, provide a kind of method for pattern projection, the method comprises the light beam producing and have applying pattern thereon.This light beam uses projecting lens to be projected, so that by pattern projection on the first area with the first angular region in space.Multiplier is employed to expand the light beam being projected lens projects, so that by pattern projection on the second area having than the second angular region of the first angular region large at least 50% in space.
In addition, according to one embodiment of the present invention, provide a kind of method for the manufacture of optoelectronic device.Described method comprises the monolithic array providing semiconductor substrate and form light-emitting component with the two-dimensional pattern of irregular lattice on substrate.
From the following detailed description of embodiments of the present invention by reference to the accompanying drawings, the present invention will be more fully understood, in the accompanying drawings:
Accompanying drawing explanation
Fig. 1 is the schematic side elevation of the 3D mapped system according to one embodiment of the present invention;
Fig. 2 is the schematic top view of the semiconductor element be formed thereon according to the transmitter array of the patterning of one embodiment of the present invention;
Fig. 3 A-3C is the schematic side elevation of integrated projection optical module according to the embodiment of the present invention;
Fig. 4 A and Fig. 4 B is the front schematic view of the pattern projected by projection optical module according to the embodiment of the present invention; And
Fig. 5 is the schematic top view of the semiconductor element be formed thereon according to the transmitter array of the patterning of Alternate embodiments of the present invention.
Embodiment
General introduction
In many optical projection application, pattern must be projected in wide angular range.Such as, the 3D of the described kind be described in superincumbent background technology part maps in application, often it is desirable for that the pattern of the light for creating mapping (map) should be projected in 90 ° or larger field.In traditional optical design, in such wide field (FOV) scope, reach rational optical quality needs to use expensive multicomponent projection optical device.For consumer's application, both the cost of such optical device and size all may make people hang back, and consumer applies the solution usually needing compact cheapness.
The some embodiments of the present invention be described hereinafter solve these demands by field multiplier, the field of the projection optical device's required pattern and expansion projects in optical train followed thereon by field multiplier, keeps the optical quality of the pattern projected simultaneously.The interpolation of field multiplier makes to use the projection optical device of compact cheapness to become possibility at wide regional extent inner projection pattern, and described projection optical device itself has relatively narrow FOV.
In disclosed embodiment, optical devices comprise electron gun, the light beam of electron gun pattern generation.The light beam that projecting lens is projection patterning, and when not having multiplier, by pattern projection to having on the given area corresponding with the visual field (FOV) of projecting lens of certain angular region in space.(as this instructions context neutralization in detail in the claims the term " lens " that uses, unless otherwise expressly noted, refer to the multi-element lens of unzoned lens and compound).Field multiplier is inserted in the FOV of projecting lens---between the given area in lens and space---and expand the bundle projected, on the region with the angular region of the FOV large at least 50% than projecting lens that pattern is projected onto in space.According to design, the bundle be expanded of following a multiplier can be the twice or even more of the FOV of projecting lens.
In some embodiments, electron gun comprises the monolithic array of light-emitting component, and the monolithic array of described light-emitting component is arranged on a semiconductor substrate by the two-dimensional pattern corresponding with the pattern be applied on light beam.
System describes
Fig. 1 is the schematic side elevation of the 3D mapped system 20 according to one embodiment of the present invention.System 20 is described to an example of the field multiplier being used in the described kind be described below here, instead of the mode by limiting.Similarly, principle of the present invention can be applicable in the optical projection system of other kind, the advantage that the compact and cost that described optical projection system requires wide FOV can benefiting to be provided by disclosed embodiment is low.
System 20 comprises projecting subassembly 30, and the bundle 38 of patterning projects on the surface of object 28 by projecting subassembly 30---and be the hand of system user in this example embodiment.Image-forming assembly 32 catches the image of the pattern projected on this surface and processes this image, to obtain the 3D figure on this surface.In order to this object, assembly 32 generally includes objective optics 40 and catches the imageing sensor 42 of image and process this image to generate the digital processing unit (not shown) of 3D mapping.The picture catching of system 20 and the details of process aspect are described in such as above mentioned U.S. Patent Application Publication 2010/0118123 and U.S. Patent Application Publication 2010/0007717, and the open of these two publics announcement of a patent application is merged in herein by reference.
Projecting subassembly 30 comprises beam generator 34 and the field multiplier 36 of patterning, and beam generator 34 projection of patterning has the irradiation beam of the patterning of certain FOV, and the bundle projected has the patterning of wider FOV bundle 38 with establishment expanded by field multiplier 36.In this example, pattern comprises the luminous point of the high-contrast on a dark background of random or quasi-random arrangement, as in public announcement of a patent application above-mentioned explain.Alternatively, the pattern of other suitable type any can be projected in this form (comprising image).
Integrated pattern generator
VCSEL array can be advantageously used in the light source and projector that manufacture compact high strength.In traditional VCSEL array, laser diode is disposed in the lattice of rule, such as, and the line grating pattern such as described in above mentioned U.S. Patent Application Publication 2011/0188054, or hexagonal lattice pattern.As in the context and claims of this instructions the term " regular lattice " that the uses two-dimensional pattern that refers in its pattern between adjacent elements the constant gap of (between the adjacent transmitter such as, in VCSEL array).Say in this sense, term " regular lattice " and periodic lattice synonym.
The embodiments of the present invention be described hereinafter deviate from this model, and as an alternative, provide wherein laser diode and are disposed in VCSEL array in the pattern of irregular lattice.Optical device can be coupled, and projects in space with the pattern of the light launched by the element by VCSEL array, and become the pattern of corresponding point, wherein each point comprises the light launched by the corresponding laser diode in array.Usually (although optional), say from the auto-correlation of the position of the laser diode of the function as transverse shift the unessential this meaning of any displacement being greater than diode size, the pattern of the laser diode position in array and the pattern therefore put are incoherent.Random, pseudorandom and quasi-periodic pattern is the example of so uncorrelated pattern.Therefore the light pattern be projected also will be incoherent.
The VCSEL array of this kind of patterning is used in particular for manufacturing integrated pattern projection module, as described below.Compared with the projector equipment be known in the art, such module has the simple advantage of Design and manufacture, and can realize the reduction of cost and size and better performance.
Fig. 2 is the schematic top view of the optoelectronic device according to one embodiment of the present invention, and it monolithic array comprising semiconductor element 100, VCSEL diode 102 is formed on semiconductor element 100 by the two-dimensional pattern of irregular lattice.This array by be used for the photoetching method of the identical type be known in the art manufacturing VCSEL array and formed on a semiconductor substrate, simultaneously suitable film layer structure forms laser diode, and electric power and grounding connection are supplied to the laser diode 102 array by conductor from contact pad 104.
The irregular lattice arrangement of Fig. 2 realizes simply by the mask suitably designed, and photo etched mask is used to by any required two-dimensional pattern manufacturing array.Alternatively, surface emitting element such as the irregular array of light emitting diode (LED) of other kind can be manufactured (although incoherent light source, as LED, comparatively may be not suitable for some pattern projection application) by this way similarly.
The monolithic VCSEL array of the described kind shown in Fig. 2 has the advantage of high power extensibility.Such as, use current technology, there is 0.3mm 2the tube core of effective coverage can comprise 200 transmitters, its total luminous power with about 500mW or larger exports.VCSEL diode emitter circular beam, and can be designed to launch the circular Gaussian bundle with single transverse mode, this is conducive to creating high-contrast and highdensity dot pattern.Because VCSEL emission wavelength is metastable as the function of temperature, so described dot pattern will be stable during operation equally, even without the effective cooling of array.
Fig. 3 A is the schematic side elevation of the integrated projection optical module 110 according to one embodiment of the present invention, and it comprises VCSEL array, such as, array shown in Fig. 2.VCSEL tube core 100 is usually tested at wafer scale, and is then cut and is arranged on suitable stroma 114 together with suitable electrical connection 116,118.This electrical connection and possible control circuit (not shown) are also coupled to tube core 100 by wire bonded conductor 122.
Be arranged on the lens 120 on the suitable spacer 122 above tube core, gather and the output bundle of the VCSEL transmitter that projects.In order to temperature stability, glass lens can be used.Multiple duplicate 128 of pattern are created, this duplicate 128 fan out in the angular region of expansion by the diffraction optical element (DOE) 124 that spacer 126 is located.Such as, DOE can comprise Damman grating or like, as described in above mentioned U.S. Patent Application Publication 2009/0185274 and 2010/0284082.
Fig. 4 A is the front schematic view of the pattern 160 of the expansion projected by projection optical module 110 according to one embodiment of the present invention.The figure shows the fan-out pattern of the described kind created by DOE 124.In this example, projected bundle has been extended to the array of 11 × 11 blocks 162 by DOE, the center of described piece 162 on respective axle 164, although the block of more or less quantity can be produced alternatively.Each piece 162 (due to pincushion distortion, it has the foursquare shape of distortion) in Fig. 4 A comprises the pattern of bright spot 166, and the pattern of bright spot 166 is the duplicate of the pattern of VCSEL array.
Usually, in this example, the fan-out angle between adjacent block 162 is in the scope of 4-8 °.Suppose that each such block such as comprises about 200 points in incoherent pattern, these about 200 points are corresponding with the laser diode 102 of about 200 in VCSEL array, then the fan-out pattern 160 of 11 × 11 shown in Fig. 4 A will comprise more than 20,000 point.DOE 124 is designed such that the duplicate projected of pattern covers the surface in (tile) space or region, as such as described in U.S. Patent Application Publication 2010/0284082.
Fig. 3 B is the schematic side elevation of the integrated projection optical module 130 according to Alternate embodiments of the present invention, and this module contains irregular VCSEL array, such as, array shown in Fig. 2.In the present embodiment, the diffracted lens 130 of the refractive projection lens 120 of module 110 replace.Lens 130 and fan-out DOE 134 (being similar to DOE 124) can be formed on the opposite side of same optical substrate 132.Although diffraction lens is responsive to wavelength variations, the relative stability of the wavelength of VCSEL element makes this method become feasible.DOE 134 is protected by the form 138 be arranged on spacer 140.
Fig. 3 C is the schematic side elevation of the integrated projection optical module 150 according to another embodiment of the invention, and this module contains irregular VCSEL array.Here, the function of diffraction lens and fan-out DOE is bonded in the single diffraction element 154 be formed on optical substrate 152, and optical substrate 152 is also used as form.Element 154 performs and focuses on and fan-out two functions: it gathers and focuses on the light launched by the light-emitting component on tube core 100, so that the light beam of projection containing the light pattern corresponding with the two-dimensional pattern of the light-emitting component on substrate, projected light beam expanded by the duplicate multiple adjacent one another are simultaneously by producing pattern as implied above.
The assembly process of the module shown in Fig. 3 A-C, DOE above aims at four dimensions (X, Y, Z and rotation) relative to VCSEL tube core 100 usually.The embodiment of 9B and 9C can be favourable in aligning, because be used to manufacture VCSEL array and the photoetching process both DOE/ diffraction lens structure to be accurate to about 1 μm, thus allow simply by the packaging passive alignment of coupling reference mark on X, Y and rotation.Due to the high precision manufactured, the movement that Z-aims at (that is, the distances between VCSEL tube core and DOE and lens) only needs among a small circle.Z-aim at therefore can actively be realized when VCSEL array is in energising or height measuring equipment such as Laser Scanning Confocal Microscope may be used, such as, measure VCSEL surface and DOE surperficial between distance and passively complete.
The module of Fig. 3 A-C can be used as the pattern projector in 3D mapped system 20.The pattern of tiling (such as, be projected on interested object as shown in Figure 4 A), and image-forming module 32 catches the image of the pattern on object 28.As explained above, the processor be associated with image-forming module each some place measured pattern is in the picture shifted relative to the partial lateral of known reference, and is therefore shifted through based on this local the depth coordinate that triangulation finds that.
Each duplicate of the pattern corresponding with in the block 162 in Fig. 4 A is inner incoherent, but usual and adjacent block is height correlation.Because each duplicate of pattern comprises the point 166 of the relatively small amount be distributed in relatively little angular region, thus when the transverse shift of the pattern on object be about block 162 spacing or larger than the spacing of block 162 time, in depth coordinate, have fuzzy possibility.In order to reduce this ambiguity, VCSEL tube core 100 can use the laser diode of larger quantity to manufacture, and therefore the optical device of projection module can produce larger block; But this solution adds complicacy and the cost of both VCSEL tube core and optical device.
Fig. 4 B is the front schematic view of the expansion pattern 170 projected by projection optical module according to the Alternate embodiments of the present invention solving the relevant issues between adjacent block.(Fig. 3 A and the field multiplier based on DOE of Fig. 3 B can be configured to produce the pattern the same with pattern 160 or 170 similarly.) pattern of this staggered tiling that illustrates in figure 4b produced by the fan-out DOE suitably designed.In this design, at least some in the block in pattern relative to adjacent block by lateral excursion a side-play amount, this side-play amount is a part for described spacing.Particularly, in this example embodiment, block 172 relative to adjacent block 174 by lateral excursion half-block.(suppose that in depth survey, only have horizontal cross to be shifted is used, side-play amount is in vertical direction in this example).
Due to this side-play amount between block, the scope of depth survey is clearly doubled effectively.Other interlocks, and wherein, adjacent block has been shifted 1/3 or 1/4 of interblock distance, such as, can provide wider clear measurement.The DOE providing these and other fan-out pattern can use methods known in the art to be such as designed based on the method for Gerchberg-Saxton algorithm.
Fig. 5 is the schematic top view of the semiconductor element 180 be formed thereon according to the monolithic VCSEL array of another embodiment of the present invention.This array is similar to the array of Fig. 2, unlike, in the embodiment of Fig. 5, there are two groups of VCSEL diodes 182 and 184 driven by independent conductor 186 and 188.In the drawings, diode 182 and 184 is shown as has different shapes, but the difference of this shape is just in order to visual clear, and in fact, all VCSEL diodes in two groups are of similar shape usually.
The two groups of VCSEL diodes 182 and 184 illustrated in the drawings can use jointly with the high-resolution image sensors 42 in image-forming module 32 (Fig. 1), to realize the zoom function in depth map system 20.For described two group feeds independent line of electric force by the single metal level of VCSEL tube core for described two groups provide independent power traces, or by add metal level realize, make each group by different layer feeds.Described two groups can contain the diode of identical or different quantity, and this depends on the required Performance Characteristics of system.Imageing sensor is assumed to support the potting gum (binning) (this with the resolution reduced for cost is to provide the sensitivity of enhancing and speed) of adjacent detector element, the cutting of sensing region and adjustable clock rate.These functions are provided by various commercially available imageing sensor.
Under wide-angle pattern, one group (such as, diode 182) in two groups of VCSEL diodes receives electric power, and another group is disconnected.Therefore, the group be powered can be driven by high power, is no more than total rated power of VCSEL tube core with each brightness of putting increased in pattern.(because the distance in such a mode between effective adjacent transmitter increases, this reduce relevant thermal effect, so the higher power of each transmitter is possible.) simultaneously, imageing sensor 42 operates under potting gum pattern, and therefore form the low-resolution image of the whole visual field of system.Because the detector element of imageing sensor merged (bin), so this imageing sensor can at full speed catch and output image.The transverse shift of pattern in the images measured by processor, to produce initial low resolution depth map.
Processor is divisible and analyze described low resolution depth map, such as, to be identified in the potential interested object in visual field, human body.In this stage, processor can be selected to amplify interested object.In order to this object, processor powers on, to produce high resolution design to all VCSEL diodes 182 and 184 in two groups.Processor also indicating image sensor 42 operates under cutting (crop) pattern, so that the region that the interested object only in scanning field of view is found wherein.In this stage, imageing sensor is read out with full resolution (in cropped region) usually, and without the need to potting gum, and imageing sensor is therefore, it is possible to catch the high-definition picture of high resolution design.Owing to reading the cutting in region, imageing sensor also can with speedy carding process image under high resolution model.Now, the transverse shift of the pattern in the image of this latter measured by processor, to form the high-resolution depth map of interested object.
Embodiment described above optimally employs both detection resources of electric power resource based on the pattern projector of VCSEL and imageing sensor.Under wide-angle pattern and these two patterns of zoom mode, the sweep velocity of imageing sensor and sensitivity can be adjusted, and (by potting gum, cutting and clock rate adjustment) is the usual depth map providing suitable resolution with constant frame rate such as 30 frames/second.
Although some embodiments in above-mentioned embodiment are specifically related to map based on the 3D of pattern, pattern projector described above can be used in other application of the light using patterning equally, comprises 2D and 3D bis-kinds of imaging applications.Therefore, will understand, embodiment described above is cited by way of example, and the invention is not restricted to the content that is particularly shown and described hereinbefore.On the contrary, scope of the present invention be included in both the combination of above described various features and sub-portfolio and those skilled in the art when reading foregoing description by occur and its change undocumented and amendment in the prior art.

Claims (8)

1. an optoelectronic device, comprising:
Semiconductor substrate; And
The monolithic array of light-emitting component, its two-dimensional pattern by irregular lattice on the substrate.
2. equipment according to claim 1, wherein said light-emitting component comprises vertical cavity surface-emitting laser (VCSEL) diode.
3. equipment according to claim 1, the described two-dimensional pattern of wherein said light-emitting component is uncorrelated pattern.
4. equipment according to claim 1, and comprise projecting lens, described projecting lens to be arranged on described semiconductor substrate and to be configured to gather and focus on the light launched by described light-emitting component, so that the light beam of projection containing the light pattern corresponding with the described two-dimensional pattern of the described light-emitting component on described substrate.
5., for the manufacture of a method for optoelectronic device, described method comprises:
Semiconductor substrate is provided; And
The monolithic array of light-emitting component is formed on the substrate by the two-dimensional pattern of irregular lattice.
6. method according to claim 5, wherein said light-emitting component comprises vertical cavity surface-emitting laser (VCSEL) diode.
7. method according to claim 5, the described two-dimensional pattern of wherein said light-emitting component is uncorrelated pattern.
8. method according to claim 5, and comprise projecting lens is arranged on described semiconductor substrate, to gather and to focus on the light launched by described light-emitting component, thus the light beam of projection containing the light pattern corresponding with the described two-dimensional pattern of the described light-emitting component on described substrate.
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