CN203367362U - 一种基于金线绑定高光效led光源模组 - Google Patents

一种基于金线绑定高光效led光源模组 Download PDF

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CN203367362U
CN203367362U CN2013203134634U CN201320313463U CN203367362U CN 203367362 U CN203367362 U CN 203367362U CN 2013203134634 U CN2013203134634 U CN 2013203134634U CN 201320313463 U CN201320313463 U CN 201320313463U CN 203367362 U CN203367362 U CN 203367362U
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light source
cup
gold thread
led chip
led
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林介本
郭震宁
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FUJIAN QUANZHOU WORLDSLIGHTING Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

本实用新型公开一种基于金线绑定高光效LED光源模组,包括封装基板和复数片LED芯片;该封装基板包括由下至上依次设置的金属散热层、绝缘层及覆铜线路层,封装基板的上表面开设有复数个反光杯,该反光杯的杯底延伸至金属散热层上,该反光杯的内表面为抛光面;复数片LED芯片分别一一对应沉置在复数个反光杯的杯底上,并且各该LED芯片的正负极分别通过一金线电气连接至覆铜线路层上;各反光杯内部及杯沿还填设有荧光胶层。LED芯片电连接基于金线绑定电连接,提高了光源模组电传输能力,热传导能力,同时金线与LED金电极接触良好,亦提高了封装的可靠性。各反光杯之间直接采用覆铜线路层形成电连接的串并联,使得LED光源具有更好的电性能稳定性,形成多杯高光效LED光源。

Description

一种基于金线绑定高光效LED光源模组
技术领域
本实用新型涉及LED光源技术领域,具体是指一种基于金线绑定高光效LED光源模组。
背景技术
近年来,LED器件封装形式从直插式(DIP)封装发展到贴片式(SMD)封装、大功率(High power)封装和COB(Chip on board)封装。其中COB由于模块化设计,具有面光源特征,应用于LED灯具时免波峰焊或回流焊,加工成本低,已逐步被LED应用企业所青睐,并广泛应用于LED球泡灯,LED日光灯,LED筒灯,LED横插灯等照明产品。
COB LED光源由于设计灵活,不同的厂商纷纷根据基板材料、封装工艺等各自开发出别具风格的新型COB光源,例如以冲压铝板为基材的MCOB,以透镜为提高光效手段的MLCOB。其中,MCOB是多芯片板上封装(Multi-chipon board),尤其是一些企业利用材料和工艺的特征制造了LED光源光效达177lm/W以上。然而,本发明人通过调研和研究认为上述MCOB光源存在以下工艺风险:(1)该MCOB光源采用了铝线绑定方式,由于铝线比金线反光能力强,在降低成本的同时又提高了光效。但是,铝线封装却具有一些技术风险如:导电性和热传导性不足;金在20摄氏度时的导电率为4.55ohm,而铝的导电率为3.65ohm,电流迟滞效应比金明显;金的热传导系数为317,铝的热传导系数为237;金的热膨胀系数为14.2,铝的热膨胀系数为23.1,受热之后铝的膨胀尤为明显。(2)该MCOB光源采用铝线绑定方式,由于LED芯片的电极一般基于欧姆接触和材料界面的考虑往往采用金电极,而将铝线和金电极压合绑定使金和铝材质之间容易形成金属间化合物。(3)该MCOB光源采用多杯封装形式,杯与杯之间的电连接采用铝板上压合玻纤线路板的方式,结构较繁杂,而且线路电连接中常常出现虚焊、混联缺陷,从而容易引起光源故障;(4)MCOB光源采用多芯片封装,一般采用串联和并联的方式,串联的颗粒往往大于10颗以上,芯片颗粒数多,封装焊接工艺点多;目前业界针对COB封装工艺缺乏有效的芯片监控手段,一旦一个芯片有出现不良或工艺不良,将导致整个光源故障。
实用新型内容
本实用新型目的在于提供一种基于金线绑定高光效LED光源模组,具有封装可靠、电性能稳定、高光效等优点。
为了达成上述目的,本实用新型的解决方案是:
一种基于金线绑定高光效LED光源模组,包括封装基板和复数片LED芯片;该封装基板包括由下至上依次叠设的金属散热层、绝缘层及覆铜线路层,所述封装基板的上表面开设有复数个反光杯,该反光杯的内表面为抛光面,并且杯底延伸至所述金属散热层上;所述复数片LED芯片分别一一对应沉置在所述复数个反光杯的杯底上,并且各该LED芯片的正负极分别通过一金线电气连接至所述覆铜线路层上;各所述反光杯内部及杯沿还填设有荧光胶层。
所述复数片LED芯片分为若干组,各组LED芯片相互并联,每组的各LED芯片相互串联,并且该每组的各LED芯片封装于一封装杯内,该封装杯内均匀涂布有荧光胶层。
采用上述方案后,本新型相对于现有技术的有益效果在于:LED芯片电连接基于金线绑定电连接,相比传统铝线绑定方式,提高了光源模组电传输能力,热传导能力,同时金线与LED金电极接触良好,亦提高了封装的可靠性。各反光杯之间直接采用覆铜线路层形成电连接的串并联,无需采用传统铝板上压合玻纤线路板方式,使得LED光源具有更好的电性能稳定性。LED芯片采用了多杯封装形式,每一个反光杯经过抛光处理呈抛光面,由此能够提高光源的光效。
附图说明
图1是本新型金线绑定多杯高光效LED光源单元器件横截示意图;
图2是本实用新型实施例1的结构示意图。
图3是本实用新型实施例2的结构示意图;
图4是本实用新型实施例3的结构示意图。
标号说明
封装基板         1           金属散热层     11
绝缘层          12           覆铜线路层     13
反光杯          14           LED芯片         2
金线             3           荧光胶层        4
具体实施方式
下面结合附图和具体实施方式对本作进一步详细的说明。
本新型涉及一种基于金线绑定高光效LED光源模组,主要包括封装基板1、复数片LED芯片2、金线3及荧光胶层4。
如图1所示,封装基板1包括由下至上依次设置的金属散热层11、绝缘层12及覆铜线路层13,该覆铜线路层13根据实际线路进行排版布置。封装基板1的上表面开设有复数个反光杯14,该反光杯14的内表面为抛光面,杯底延伸至金属散热层11,即反光杯14的杯深不小于覆铜线路层13和绝缘层12的厚度总和。复数片LED芯片2分别一一对应沉置在复数个反光杯14的杯底上,并且各该LED芯片2的正负极分别通过一金线3电气连接至覆铜线路层13上。荧光胶层4填充在各反光杯14内部及杯沿处,其用于封装LED芯片2及金线3。
优选的,所述复数片LED芯片2分为若干组,各组LED芯片2相互并联,每组的各LED芯片2相互串联,并且该每组的各LED芯片2封装在一封装杯内,该封装杯内均匀涂布一相匹配的荧光胶层,以覆盖单组各LED芯片2对应的各反光杯14。
如图2-4给出三个实施例,所述封装杯均呈圆形结构。图2为圆形多杯金线绑定LED光源模组,每封装杯内排布有9个反光杯14和9颗LED芯片2,各封装杯在封装基板1上呈圆形环绕分布,覆铜线路层13对应并联线路部分呈内外布置。如图3和图4均为条形多杯金线绑定LED光源模组,各封装杯在封装基板1上呈一字排开,覆铜线路层13对应并联线路部分呈左右两侧布置。图3和图4两实施例不同点在于每封装杯内排布的反光杯数量及排列方式略有不同。
本新型LED光源模组中,LED芯片2电连接基于金线3绑定电连接,相比传统铝线绑定方式,提高了光源模组电传输能力,热传导能力,同时金线3与LED芯片2金电极接触良好,亦提高了封装的可靠性。各反光杯14之间直接采用覆铜线路层13形成电连接的串并联,无需采用传统铝板上压合玻纤线路板方式,使得LED光源具有更好的电性能稳定性。LED芯片2采用了多杯封装形式,每一个反光杯14经过抛光处理呈抛光面,由此能够提高光源的光效。
以上所述仅为本新型的优选实施例,凡跟本新型权利要求范围所做的均等变化和修饰,均应属于本新型权利要求的范围。

Claims (2)

1.一种基于金线绑定高光效LED光源模组,其特征在于:包括封装基板和复数片LED芯片;该封装基板包括由下至上依次叠设的金属散热层、绝缘层及覆铜线路层,所述封装基板的上表面开设有复数个反光杯,该反光杯的内表面为抛光面,并且杯底延伸至所述金属散热层上;所述复数片LED芯片分别一一对应沉置在所述复数个反光杯的杯底上,并且各该LED芯片的正负极分别通过一金线电气连接至所述覆铜线路层上;各所述反光杯内部及杯沿还填设有荧光胶层。
2.如权利要求1所述的一种基于金线绑定高光效LED光源模组,其特征在于:所述复数片LED芯片分为若干组,各组LED芯片相互并联,每组的各LED芯片相互串联,并且该每组的各LED芯片封装于一封装杯内,该封装杯内均匀涂布有荧光胶层。
CN2013203134634U 2013-06-03 2013-06-03 一种基于金线绑定高光效led光源模组 Expired - Fee Related CN203367362U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037302B (zh) * 2014-05-23 2017-04-26 常州市武进区半导体照明应用技术研究院 一种led封装组件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037302B (zh) * 2014-05-23 2017-04-26 常州市武进区半导体照明应用技术研究院 一种led封装组件

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