CN203319709U - Polycrystalline silicon production device - Google Patents
Polycrystalline silicon production device Download PDFInfo
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- CN203319709U CN203319709U CN2013203484163U CN201320348416U CN203319709U CN 203319709 U CN203319709 U CN 203319709U CN 2013203484163 U CN2013203484163 U CN 2013203484163U CN 201320348416 U CN201320348416 U CN 201320348416U CN 203319709 U CN203319709 U CN 203319709U
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Abstract
The utility model discloses a polycrystalline silicon production device. The polycrystalline silicon production device comprises a chassis and a bell jar, wherein the chassis and the bell jar are of double-layer structures, a cylindrical annular base is arranged in the bell jar, a chamber between the lower end of the annular base and the chassis is an air inlet chamber, a chamber between the annular base and the upper end of the bell jar is an air outlet chamber, a cylindrical chamber passing through the top surface and the bottom surface is formed in the center of the annular base, silicon rod growth chambers passing through the top surface and the bottom surface are also uniformly formed in the circumference of the annular base, an electrode fixing seat is arranged on the chassis, an electrode is arranged on the electrode fixing seat, silicon cores are fixed on the electrode, the upper ends of two adjacent silicon cores are connected with conductive silicon cores, a cooler and a filter are respectively arranged in the cylindrical chamber from top to bottom, and cooling sleeves are sheathed on the silicon cores in the silicon rod growth chambers. Therefore, the polycrystalline silicon production device has the beneficial effects of rapidly adjusting the reaction temperature in a reducing furnace, stably controlling the reaction temperature within the best range, reducing the occurrence of adverse reactions, and then improving the purity of silicon rods.
Description
Technical field
The utility model relates to the photovoltaic technology field, relates in particular to a kind of polycrystalline silicon producing device.
Background technology
At present, the production major part of polysilicon is all the method production that adopts improvement siemens, improved Siemens is with chlorine and hydrogen synthesising hydrogen, hydrogenchloride and industrial silica fume be synthesizing trichlorosilane at a certain temperature, then trichlorosilane is separated to rectification and purification, trichlorosilane after purification carries out the chemical vapor deposition reaction and produces polysilicon in hydrogen reduction furnace, the optimum temperature range of reaction is at 1080 ℃-1150 ℃, if temperature is too high produce a large amount of silica flours in Reaktionsofen, be suspended in Reaktionsofen, and be deposited on the silicon rod surface, generate ambiguity silicon, thereby cause the silicon rod purity drop, when temperature is too low, hydrogen reacts with trichlorosilane not exclusively, and the silicon rod speed of growth is slow, and energy consumption is large, also has side reaction simultaneously and produces.Therefore, temperature of reaction while how to control improvement siemens production polysilicon becomes a Focal point and difficult point, common reduction furnace generally comprises chassis now, bell jar and top cover, flange connects each other, chassis, bell jar and end socket are all bilayer structures, the internal circulation heat-eliminating medium carries out cooling to Reaktionsofen, thereby the temperature of reaction in the control stove, and the high voltage electric that is connected with kilovolt between two silicon cores in stove produces amount of heat, for whole reaction provides thermal source, yet the carrying out along with reaction, temperature in stove is during higher than the scope of optimal reaction temperature, can keep temperature equilibrium by the flow velocity of accelerating heat-eliminating medium.Yet because whole reduction furnace integral body is cylindrical structure, internal capacity is very large, reduction furnace inside is along radial direction, does not wait to the distance of furnace wall each position, and heat-eliminating medium just flows and absorbs heat on the furnace wall of reduction furnace, therefore is difficult in the short period of time temperature of reaction is adjusted to optimum temps, the adjusting time is longer, and, in the process of this adjusting, produced ambiguity silicon on silicon rod, thereby cause the purity drop of whole silicon rod.Due to present equipment to large scale development trend, after the excellent number of reaction increases, the reduction furnace interior diameter will increase, and the heat of generation will increase, now the cooling performance of furnace wall is obviously poor, and obviously the simple cooling mode in furnace wall can't meet the production of present polysilicon.
Chinese patent Granted publication number: CN101966991A, on February 9 2011 Granted publication day, disclose polycrystalline silicon producing device, comprising: chassis; Bell jar, be arranged on chassis, with chassis, forms reactor; Bell jar is provided with the tail gas outlet; Bell jar outer setting chuck, arrange chuck cooling oil entrance and chuck cooling-oil outlet on chuck; Inside reactor arranges internals, and internals comprise middle adapter and jacket pipe, and polycrystalline silicon rod is set in jacket pipe; The middle adapter bottom arranges process gas entrance, reactor cooling oil-in and reactor cooling oil export.Utilize this kind of production polycrystalline silicon device, can effectively reduce the growth of amorphous silicon in reactor, reduce the pollution of device, improve transformation efficiency and the purity of polysilicon.Its weak point is that the interior temperature of reaction of the polycrystalline silicon producing device middle bell jar of this kind of structure is only cooling by the heat-eliminating medium in chuck, when excess Temperature, heat-eliminating medium needs a longer time just to be reduced to optimum temps to the temperature of reaction in bell jar, be that the regulate process time is longer, in this process, the silicon rod surface has produced more ambiguity silicon, indefinite form silicon can drop on the silicon rod surface, pollutes silicon rod.
The utility model content
The utility model is longer for the cooling system adjusting temperature-time that overcomes polycrystalline silicon producing device of the prior art, in regulate process, the silicon rod surface easily generates ambiguity silicon, thereby reduce the deficiency of silicon rod purity, temperature of reaction in a kind of energy quick adjustment reduction furnace is provided, the stable optimum range that is controlled at temperature of reaction, thus the polycrystalline silicon producing device of silicon rod purity guaranteed.
To achieve these goals, the utility model adopts following technical scheme:
A kind of polycrystalline silicon producing device, comprise chassis and bell jar, described chassis is all bilayer structure, be respectively equipped with cooling liquid inlet and cooling liquid outlet on chassis and bell jar, be provided with columned circular base in described bell jar, cavity between circular base lower end and chassis is inlet chamber, cavity between circular base and bell jar upper end is outlet chamber, the outer wall of described circular base and the laminating of the inwall of bell jar, the circular base center is provided with the cylindrical cavity that runs through end face and bottom surface, also evenly be provided with the silicon rod growth chamber that runs through end face and bottom surface on the circumference of described circular base, chassis is provided with the electrode permanent seat, the electrode permanent seat is provided with electrode, be fixed with the silicon core on electrode, every silicon core all stretches in the silicon rod growth chamber, the upper end of two adjacent silicon cores is connected with the conductive silicon core, be respectively equipped with water cooler in described cylindrical cavity from top to bottom, strainer, chassis is provided with inlet pipe and escape pipe, the inlet pipe upper end is communicated with inlet chamber, the upper end of escape pipe is connected with strainer.Water cooler is arranged on to the inside of bell jar, and silicon core, silicon rod growth chamber evenly are arranged in the annular region between water cooler and bell jar inwall, temperature of reaction in silicon rod growth chamber in heat-eliminating medium co-controlling bell jar in internal cooler and bell jar interlayer, can be reduced to best reaction range to temperature fast in the time of excess Temperature, reduce to greatest extent the generation of ambiguity silicon, thereby guarantee the purity of silicon rod.
As preferably, be arranged with cooling jacket on the silicon core in described silicon rod growth chamber, described cooling jacket is the interlayer cover, and the lower end of described cooling jacket is provided with inlet opening, and the upper end of cooling jacket is provided with fluid hole.In each independent silicon rod growth chamber, independent cooling jacket is also arranged, the inlet opening of cooling jacket lower end is connected with the coolant inlet pipe of extraneous cooling system, cooling fluid enters in the interlayer of cooling jacket from extraneous cooling system, conversion zone to silicon core periphery carries out temperature control accurately, can be adjusted to fast and accurately best temperature of reaction, guarantee the purity of silicon rod.
As preferably, the lower end of circular base is provided with annular skimmer, the annular skimmer is provided with cooling liquid inlet, the lower end inlet opening of each cooling jacket is communicated with annular skimmer, the outer side wall of circular base is provided with annular recesses, form the annular chamber of sealing between described annular recesses and bell jar inwall, the fluid hole of the upper end of each cooling jacket is communicated with annular chamber by pipe connecting, and the lower end of described annular chamber is provided with cooling liquid outlet.Because the quantity of cooling jacket is more, and the temperature of reaction at each silicon core place wants consistent, therefore by skimmer, be a plurality of cooling jacket feed flows, guarantee cooling fluid even, stable entering in different cooling jackets simultaneously, thereby make the cooling performance high conformity of cooling jacket, temperature of reaction is convenient to control, regulate, cooling fluid after the absorption heat flows in the sealing annular chamber from the fluid hole of cooling jacket upper end, then from the cooling liquid outlet of annular chamber lower end, enters in the cooling fluid output tube of extraneous cooling system.
As preferably, water cooler comprises vertical main cooling tube and auxiliary cooling pipe, the lower end of main cooling tube is provided with cooling liquid inlet, the periphery of described main cooling tube is provided with several spiral pipes vertically, the inner of described spiral pipe is connected perforation with main cooling tube respectively, the outer end of spiral pipe is connected respectively perforation with auxiliary cooling pipe, the upper end of described auxiliary cooling pipe is provided with cooling liquid outlet.Cooling liquid inlet on main cooling tube is connected with coolant inlet pipe in extraneous cooling system, cooling fluid enters in main cooling tube, then pass through main cooling tube separately to each spiral pipe separatory, make each spiral pipe can absorb to greatest extent heat, and the contact area of spiral pipe and tail gas is large, cooling performance might as well, cooling fluid enters in auxiliary cooling pipe from the outer end of each spiral pipe, then from the cooling liquid outlet of auxiliary cooling pipe upper end, flows in the cooling fluid output tube of extraneous cooling system.
As preferably, the center on chassis is provided with support cover, and in a tubular form, the lower end of support cover is fixedly connected with chassis described support cover, and the upper end of support cover is connected with the lower end flanges of strainer, and the side of described support cover is provided with some ventilating pits.Support cover plays the effect of support to strainer, silicon source property gas can pass through in the ventilating pit of support cover, and ventilating pit can further make silicon source property gas mix, and is conducive to fully carrying out of reaction; When the needs cleaning and filtering, the joint bolt that only need to pull down on flange can pull down cleaning to whole strainer, very convenient.
As preferably, described inlet pipe and escape pipe are concentric tube, escape pipe is located at inlet pipe inside, the lower end of escape pipe is stretched out outside inlet pipe and is branched off into muffler and vapor pipe, the outer end of described vapor pipe connects cold hydrogenation apparatus, the outer end of described muffler is communicated with inlet pipe, and the pipeline of described muffler is provided with air pump.Most of tail gas is cooling through supercooler, after the filtration of strainer, in escape pipe, get rid of again, tail gas after processing also can carry out recycle by residual a lot of silicon source property gas in recycling tail gas enter inlet pipe in muffler under the effect of air pump, thereby improves the utilization ratio of raw material.
As preferably, the bell jar upper end open, the upper end of bell jar is provided with end socket, and between described end socket and bell jar, flange connects, and end socket is also bilayer structure, also is provided with cooling liquid inlet and cooling liquid outlet on end socket.This kind of structure middle bell jar upper end open, after silicon rod is grown well, only need to open end socket can take out silicon rod by loop wheel machine, and do not need all to write heavy bell jar at every turn, whole process of getting silicon rod is more laborsaving, convenient, can also remove the integrated danger of collision silicon rod in tearing the stove process open of conventional bell jar from.
As preferably, each cooling liquid inlet and cooling liquid outlet arrange manually-operated gate.In case of emergency can control flowing of cooling fluid by manually-operated gate.
As preferably, each cooling liquid inlet place is connected with coolant inlet pipe by independent pipe, and each pipe is provided with autocontrol valve.All autocontrol valves are connected with master controller, and in process of production, according to the variation of sample temperature, each autocontrol valve can pass through the controller flow automatic regulation to silicon rod.
Therefore, the utlity model has the temperature of reaction in the quick adjustment reduction furnace, the stable optimum range that is controlled at temperature of reaction, thus improve silicon rod purity, reduce the property gas waste of silicon source, reduce the beneficial effect that silica flour produces.
Simultaneously, the utility model also has the circulation of tail gas utilization, thereby reduces wastage of material, improves the beneficial effect of silicon rod productivity.
The accompanying drawing explanation
Fig. 1 is a kind of structural representation of the utility model.
Fig. 2 is vertical view of the present utility model.
In figure: main cooling tube 41 auxiliary cooling pipe 42 muffler 61 vapor pipes 62 of the chassis 1 bell jar 2 cooling liquid inlet 3 cooling liquid outlet 4 circular base 5 inlet chamber 6 outlet chamber 7 cylindrical cavity 8 silicon rod growth chamber 9 electrode permanent seat 10 electrode 11 silicon core 12 conductive silicon core 13 water cooler 14 strainer 15 inlet pipe 16 escape pipe annular skimmer 19 annular chamber 20 support cover 21 ventilating pit 22 air pump 24 end socket 25 manually-operated gate 26 coolant inlet pipe 27 autocontrol valve 28 cooling fluid output tube 29 of 17 cooling jacket 18.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is further described:
A kind of polycrystalline silicon producing device as depicted in figs. 1 and 2, comprise chassis 1 and bell jar 2, bell jar 2 upper end open, the upper end of bell jar 2 is provided with end socket 25, between end socket 25 and bell jar 2, flange connects, chassis 1, bell jar 2, end socket 25 is all bilayer structure, be provided with the gap for coolant flow between bilayer, chassis, bell jar, all be respectively equipped with the cooling liquid inlet 3 and the cooling liquid outlet 4 that are communicated with the coolant flow gap on end socket, each cooling liquid inlet 3 and cooling liquid outlet 4 arrange manually-operated gate 26, each cooling liquid inlet 3 place is connected with coolant inlet pipe 27 by independent pipe, each cooling liquid outlet 4 place also is connected with cooling fluid output tube 29 by pipe, each pipe is provided with autocontrol valve 28, each autocontrol valve 28 is connected with controller, the independent openings of sizes adjust flux of automatically controlling each autocontrol valve 28 by controller, cooling fluid enters respectively chassis from coolant inlet pipe 27, bell jar, whole reduction furnace is carried out to integral body in end socket cooling, be provided with columned circular base 5 in bell jar 2, cavity between circular base 5 lower ends and chassis 1 is inlet chamber 6, cavity between the end socket 25 of circular base 5 and bell jar upper end is outlet chamber 7, the inwall laminating of the outer wall of circular base 5 and bell jar 2, circular base 5 centers are provided with the cylindrical cavity 8 that runs through end face and bottom surface, be respectively equipped with water cooler 14 in cylindrical cavity 8 from top to bottom, strainer 15, also evenly be provided with the silicon rod growth chamber 9 that runs through end face and bottom surface on the circumference of circular base 5, chassis 1 inner bottom part is provided with annular electrode permanent seat 10, electrode permanent seat 10 is provided with electrode 11, be fixed with silicon core 12 on electrode 11, the upper end of every silicon core 12 is all stretched in silicon rod growth chamber 9 and is stretched out from the upper end of silicon rod growth chamber, the upper end of two adjacent silicon cores 12 is connected with conductive silicon core 13, two silicon cores and conductive silicon core form a power circuit, each silicon rod growth chamber is arranged in the annular region between water cooler and bell jar wall, each silicon rod growth chamber is to the close together of bell jar inner side-wall and nearer, thereby be convenient to the interior cooling fluid of bell jar wall to the most effective cooling effect of silicon rod growth chamber (being the reduction reaction generation area).
Chassis is provided with inlet pipe 16 and escape pipe 17, inlet pipe 17 upper ends are communicated with inlet chamber 6, the upper end of escape pipe 17 is connected with strainer 15, the center on chassis 1 is provided with support cover 21, support cover 21 in a tubular form, the lower end of support cover 21 is fixedly connected with chassis, the lower end of escape pipe 17 is passed and passes chassis from the axis of support cover, the upper end of support cover 21 is connected with the lower end flanges of strainer 15, the lower end of the upper end of support cover 21 and strainer 15 also can connect with welding, in the present embodiment, the upper end of support cover 21 is connected with the lower end flanges of strainer 15, the side of support cover 21 is provided with some ventilating pits 22, inlet pipe 16 and escape pipe 17 are concentric tube, escape pipe 17 is located at inlet pipe 16 inside, the lower end of escape pipe 17 is stretched out outside inlet pipe 16 and is branched off into muffler 61 and vapor pipe 62, the outer end of vapor pipe 62 connects exhaust gas treating device, the outer end of muffler 61 is communicated with inlet pipe 16, the pipeline of muffler 61 is provided with air pump 24, silicon source property gas (silane or a chlorine hydrogen silicon, dichloro-dihydro silicon, trichlorosilane, the gas mixture of silicon tetrachloride and hydrogen) from inlet pipe 16, enter in inlet chamber 6, then from the ventilating pit of support cover 21 sides, pass through, ventilating pit can further make silicon source property gas mix, be convenient to sufficient reacting, fully, last silicon source property gas enters in the silicon rod growth chamber, silicon core now, be connected with high voltage electric in the power circuit that the conductive silicon core all becomes and provide temperature environment for reduction reaction, being reduced out polysilicon accumulates on silicon core and conductive silicon core, reacted tail gas from discharge the upper end of silicon rod growth chamber through outlet chamber, then arriving water cooler carries out cooling, the low tail gas of temperature is due in stove and the pressure reduction reason of exhaust pipe, descend and discharge from escape pipe after the filtration of strainer, strainer can filter out the ambiguity silica flour in tail gas, in the tail gas of discharging because contain a certain amount of silicon source property gas, therefore a part of tail gas is used by the air pump suction inlet pipe internal recycle on muffler, a part enters in exhaust gas treating device from vapor pipe, thereby keep the stable of pressure in whole gas system.
Silicon core in silicon rod growth chamber 9 is arranged with cooling jacket 18 outward, cooling jacket is the interlayer cover, the lower end of cooling jacket 18 is provided with inlet opening, the upper end of cooling jacket 18 is provided with fluid hole, the lower end of circular base 5 is provided with annular skimmer 19, the lower end inlet opening of each cooling jacket is communicated with annular skimmer 19, the outer side wall of circular base 5 is provided with annular recesses, form the annular chamber 20 of sealing between annular recesses and bell jar inwall, the fluid hole of the upper end of each cooling jacket is communicated with annular chamber by pipe connecting, the lower end of annular chamber is provided with cooling liquid outlet, annular skimmer 19 is connected with extraneous coolant inlet pipe, the lower end of annular chamber is provided with cooling liquid outlet and is connected with the cooling fluid output tube, cooling fluid enters in the interlayer of cooling jacket from extraneous coolant inlet pipe, the adjusting of cooperation automatic regulating valve is carried out temperature control accurately to the conversion zone of silicon core periphery, can be adjusted to fast and accurately best temperature of reaction, guarantee the purity of silicon rod, and the time that is adjusted to the optimal reaction temperature state from superheat state is very short, thereby avoid to greatest extent the generation of side reaction, reduce to greatest extent the generation of ambiguity silicon, thereby effectively improve the purity of silicon rod, as shown in Figure 2, water cooler 14 comprises vertical main cooling tube 41 and auxiliary cooling pipe 42, the lower end of main cooling tube is provided with cooling liquid inlet, the periphery of main cooling tube is provided with several spiral pipes 43 vertically, the inner of spiral pipe 43 is connected perforation with main cooling tube respectively, the outer end of spiral pipe 43 is connected respectively perforation with auxiliary cooling pipe, the upper end of described auxiliary cooling pipe is provided with cooling liquid outlet, the cooling liquid inlet of main cooling tube lower end is connected with coolant inlet pipe, the cooling liquid outlet of auxiliary cooling pipe upper end is connected with the cooling fluid output tube, cooling fluid enters in main cooling tube, then pass through main cooling tube separately to each spiral pipe separatory, make each spiral pipe can absorb to greatest extent heat, and the contact area of spiral pipe and tail gas is large, cooling performance might as well, cooling fluid enters in auxiliary cooling pipe from the outer end of each spiral pipe, then from the cooling liquid outlet of auxiliary cooling pipe upper end, flow in the cooling fluid output tube of extraneous cooling system.Therefore, the utlity model has the temperature of reaction in the quick adjustment reduction furnace, temperature of reaction, the stable optimum range that is controlled at, reduce the generation of side reaction, reduces to greatest extent the generation of ambiguity silicon, thereby effectively improve the beneficial effect of silicon rod purity; Simultaneously, the utility model can, by the control of temperature in stove, reduce after the tail gas that contains a small amount of silicon source property gas leaves cooling jacket and continue reaction, thereby reduce the loss of silicon source property gas; In addition, the utility model also has the circulation of tail gas utilization, thereby reduces wastage of material, further reduces the beneficial effect of silicon source property air-loss.
Claims (9)
1. a polycrystalline silicon producing device, comprise chassis (1) and bell jar (2), described chassis and bell jar are all bilayer structure, be respectively equipped with cooling liquid inlet (3) and cooling liquid outlet (4) on chassis and bell jar, it is characterized in that, be provided with columned circular base (5) in described bell jar, cavity between circular base lower end and chassis is inlet chamber (6), cavity between circular base and bell jar upper end is outlet chamber (7), the outer wall of described circular base and the laminating of the inwall of bell jar, the circular base center is provided with the cylindrical cavity (8) that runs through end face and bottom surface, also evenly be provided with the silicon rod growth chamber (9) that runs through end face and bottom surface on the circumference of described circular base, chassis is provided with electrode permanent seat (10), the electrode permanent seat is provided with electrode (11), be fixed with silicon core (12) on electrode, every silicon core all stretches in the silicon rod growth chamber, the upper end of two adjacent silicon cores is connected with conductive silicon core (13), be respectively equipped with water cooler (14) in described cylindrical cavity from top to bottom, strainer (15), chassis is provided with inlet pipe (16) and escape pipe (17), the inlet pipe upper end is communicated with inlet chamber, the upper end of escape pipe is connected with strainer.
2. polycrystalline silicon producing device according to claim 1, it is characterized in that, be arranged with cooling jacket (18) on the silicon core in described silicon rod growth chamber (9), described cooling jacket is the interlayer cover, the lower end of described cooling jacket is provided with inlet opening, and the upper end of cooling jacket is provided with fluid hole.
3. polycrystalline silicon producing device according to claim 2, it is characterized in that, the lower end of circular base (5) is provided with annular skimmer (19), the annular skimmer is provided with cooling liquid inlet, the lower end inlet opening of each cooling jacket is communicated with annular skimmer (19), the outer side wall of circular base (5) is provided with annular recesses, form the annular chamber (20) of sealing between described annular recesses and bell jar inwall, the fluid hole of the upper end of each cooling jacket is communicated with annular chamber by pipe connecting, and the lower end of described annular chamber is provided with cooling liquid outlet.
4. according to claim 1 or 2 or 3 described polycrystalline silicon producing devices, it is characterized in that, water cooler (14) comprises vertical main cooling tube (41) and auxiliary cooling pipe (42), the lower end of main cooling tube is provided with cooling liquid inlet, the periphery of described main cooling tube is provided with several spiral pipes (43) vertically, the inner of described spiral pipe is connected perforation with main cooling tube respectively, the outer end of spiral pipe is connected respectively perforation with auxiliary cooling pipe, the upper end of described auxiliary cooling pipe is provided with cooling liquid outlet.
5. polycrystalline silicon producing device according to claim 4, it is characterized in that, the center on chassis is provided with support cover (21), described support cover in a tubular form, the lower end of support cover is fixedly connected with chassis, the upper end of support cover is connected with the lower end flanges of strainer, and the side of described support cover is provided with some ventilating pits (22).
6. polycrystalline silicon producing device according to claim 1, it is characterized in that, described inlet pipe (16) and escape pipe (17) are concentric tube, escape pipe is located at inlet pipe inside, the lower end of escape pipe is stretched out outside inlet pipe and is branched off into muffler (61) and vapor pipe (62), the outer end of described vapor pipe is connected with exhaust gas treating device, and the outer end of described muffler is communicated with inlet pipe, and the pipeline of described muffler is provided with air pump (24).
7. according to the described polycrystalline silicon producing device of claim 1 or 6, it is characterized in that bell jar (2) upper end open, the upper end of bell jar is provided with end socket (25), between described end socket and bell jar, flange connects, and end socket is also bilayer structure, also is provided with cooling liquid inlet and cooling liquid outlet on end socket.
8. polycrystalline silicon producing device according to claim 7, is characterized in that, each cooling liquid inlet (3) and cooling liquid outlet (4) arrange manually-operated gate (26).
9. polycrystalline silicon producing device according to claim 8, is characterized in that, each cooling liquid inlet place is connected with coolant inlet pipe (27) by independent pipe, and each pipe is provided with autocontrol valve (28).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203484163U CN203319709U (en) | 2013-06-18 | 2013-06-18 | Polycrystalline silicon production device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203484163U CN203319709U (en) | 2013-06-18 | 2013-06-18 | Polycrystalline silicon production device |
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| CN203319709U true CN203319709U (en) | 2013-12-04 |
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| CN2013203484163U Expired - Fee Related CN203319709U (en) | 2013-06-18 | 2013-06-18 | Polycrystalline silicon production device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103626185A (en) * | 2013-06-18 | 2014-03-12 | 浙江精功科技股份有限公司 | Polysilicon production apparatus |
| CN103708464A (en) * | 2013-12-18 | 2014-04-09 | 天津大学 | Arrangement mode and connection method of decomposition furnace with 3 pairs of rods for producing polysilicon through silane method |
| CN110282627A (en) * | 2019-07-24 | 2019-09-27 | 中国恩菲工程技术有限公司 | The cooling system and method for polycrystalline silicon reducing furnace |
-
2013
- 2013-06-18 CN CN2013203484163U patent/CN203319709U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103626185A (en) * | 2013-06-18 | 2014-03-12 | 浙江精功科技股份有限公司 | Polysilicon production apparatus |
| CN103626185B (en) * | 2013-06-18 | 2015-05-13 | 浙江精功科技股份有限公司 | Polysilicon production apparatus |
| CN103708464A (en) * | 2013-12-18 | 2014-04-09 | 天津大学 | Arrangement mode and connection method of decomposition furnace with 3 pairs of rods for producing polysilicon through silane method |
| CN110282627A (en) * | 2019-07-24 | 2019-09-27 | 中国恩菲工程技术有限公司 | The cooling system and method for polycrystalline silicon reducing furnace |
| CN110282627B (en) * | 2019-07-24 | 2023-09-19 | 中国恩菲工程技术有限公司 | Cooling system and method for polycrystalline silicon reduction furnace |
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Granted publication date: 20131204 Termination date: 20170618 |
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| CF01 | Termination of patent right due to non-payment of annual fee |