CN203299499U - Array substrate and display device - Google Patents
Array substrate and display device Download PDFInfo
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- CN203299499U CN203299499U CN2013203642345U CN201320364234U CN203299499U CN 203299499 U CN203299499 U CN 203299499U CN 2013203642345 U CN2013203642345 U CN 2013203642345U CN 201320364234 U CN201320364234 U CN 201320364234U CN 203299499 U CN203299499 U CN 203299499U
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Abstract
The utility model discloses an array substrate and a display device. The array substrate comprises a thin film transistor arranged on a substrate and an electrode structure arranged on the thin film transistor. The electrode structure comprises a pixel electrode and a public electrode which are insulated from each other. The array substrate further comprises a black matrix arranged above the thin film transistor, and an orthographic projection of the black matrix on the substrate covers the thin film transistor. The black matrix is electrically connected with the public electrode and used for providing public electrode signals for the public electrode. Due to the fact that a function that the black matrix reuses a public electrode line is adopted, the black matrix is electrically connected with the public electrode and provides the public electrode signals for the public electrode. Compared with the prior art of arranging the public electrode line in the same layer as the grid electrode independently, occupation of each sub pixel unit opening area can be reduced, and opening rate of the array substrate is improved. Due to the fact that the black matrix used as the public electrode line is arranged above the thin film transistor, film layers penetrated by a via hole required when the black matrix is connected with the public electrode can be reduced, and the difficulty of a manufacturing process is reduced.
Description
Technical field
The utility model relates to the display technique field, relates in particular to a kind of array base palte and display device.
Background technology
Display panels is mainly by array base palte, the subtend substrate, and the liquid crystal molecule between this two substrates forms; Wherein, be provided with on array base palte and be the sub-pix unit that matrix is arranged, the pixel electrode that each sub-pix unit is provided with thin film transistor (TFT) (TFT) and with thin film transistor (TFT), is connected, be provided with on the subtend substrate public electrode and with each sub-pix unit colored filter one to one.Display panels need to carry out contraposition with each colored filter on the subtend substrate and each sub-pix unit on array base palte to box the time, bit errors easily appears when contraposition, generation for fear of bit errors, occurred colored filter is set directly at structure (COA, CF on Array) on array base palte.
at present, existing COA structure is directly simply to be superimposed upon on array base palte colored filter mostly, with senior super dimension field switch (ADS, Advanced Super Dimension Switch) the COA structure of pattern is example, as shown in Figure 1, structure on its array base palte comprises: be successively set on grid 102 and public electrode wire 103 on underlay substrate 101, gate insulation layer 104, active layer 105, source electrode 106 and drain electrode 107, the first insulation course 108, black matrix 109, colored filter 110, pixel electrode 111, the second insulation course 112, and public electrode 113.Wherein, public electrode 113 is electrical connected by via hole a and the public electrode wire 103 that runs through gate insulator 104, the first insulation course 108, colored filter 110 and the second insulation course 112.
the array base palte of said structure needs to use 10 road mask plates (Mask) to carry out composition in the preparation, the step that needs to use Mask to carry out composition is specially: the figure for preparing grid 102 and public electrode wire 103, active layer 105, the figure of source electrode 106 and drain electrode 107, the figure of gate insulator 104 and the first insulation course 108, the figure of black matrix 109, the figure of colored filter 110, the figure of pixel electrode 111, the figure of the second insulation course 112, the figure of public electrode 113, wherein, because colored filter 110 is generally (red by three primary colors, green, indigo plant) monochromatic filter of cross arrangement forms, therefore need to use respectively 3 road Mask compositions to carry out composition.
In said structure, lighttight public electrode wire 103 arranges with layer with grid 102, can take the open area of each sub-pix unit on the one hand, affected aperture opening ratio, on the other hand, public electrode 113 need to be electrical connected by darker via hole a and public electrode wire 103, the material of gate insulator 104, the first insulation course 108, colored filter 110 and the second insulation course 112 that runs through due to this via hole a is not quite similar, need repeatedly composition to form in preparation process, this has also increased whole preparation technology's difficulty.
In sum, the ADS pattern array substrate of existing COA structure exists preparation technology's difficulty larger, the problem that aperture opening ratio is lower.
The utility model content
The utility model embodiment provides a kind of array base palte and display device, can improve the aperture opening ratio of COA structure and can reduce the preparation difficulty.
The utility model embodiment provides a kind of array base palte, comprise underlay substrate, be positioned at the thin film transistor (TFT) thin film transistor (TFT) on described underlay substrate, and be positioned at the electrode structure on described thin film transistor (TFT), described electrode structure comprises pixel electrode and the public electrode of mutually insulated, also comprises:
Be positioned at the black matrix that described thin film transistor (TFT) top and the orthogonal projection on described underlay substrate cover described thin film transistor (TFT);
Described black matrix and described public electrode are electrical connected, and being used for provides common electrode signal to described public electrode.
A kind of display device that the utility model embodiment provides, comprise the above-mentioned array base palte that the utility model embodiment provides.
The beneficial effect of the utility model embodiment comprises:
A kind of array base palte and display device that the utility model embodiment provides, this array base palte comprises the thin film transistor (TFT) thin film transistor (TFT) that is positioned on underlay substrate, and be positioned at electrode structure on thin film transistor (TFT), electrode structure comprises pixel electrode and the public electrode of mutually insulated, also comprises: be positioned at thin film transistor (TFT) top and the transistorized black matrix of the orthogonal projection cover film on underlay substrate; Black matrix and public electrode are electrical connected, and are used for providing common electrode signal to public electrode.Due to the function that adopts the black multiplexing public electrode wire of matrix, be electrical connected and provide common electrode signal to it with public electrode, with respect to arranging separately in prior art and the public electrode wire of grid with layer, can reduce taking of each open area, sub-pix unit, improve the aperture opening ratio of array base palte.And due to will be as the black arranged in matrix of public electrode wire above thin film transistor (TFT), the rete that in the time of can also reducing black matrix and be connected with public electrode, required via hole runs through, have also reduced preparation technology's difficulty.
Description of drawings
Fig. 1 is the structural representation of the ADS pattern array substrate of existing COA structure;
Fig. 2 a to Fig. 2 c is respectively the structural representation intention of the array base palte that the utility model embodiment provides;
The preparation method's of the array base palte that Fig. 3 provides for the utility model embodiment process flow diagram;
Form the structural representation of each step of the figure of public electrode and black matrix in the preparation method that Fig. 4 a to Fig. 4 f provides for the utility model embodiment by composition technique.
Embodiment
Below in conjunction with accompanying drawing, the array base palte that the utility model embodiment is provided and the embodiment of display device are described in detail.
In accompanying drawing, each layer film thickness and shape do not reflect the true ratio of array base palte, and purpose is signal explanation the utility model content just.
The utility model embodiment provides a kind of array base palte, as shown in Fig. 2 a to Fig. 2 c, comprise underlay substrate 201, be positioned at the thin film transistor (TFT) thin film transistor (TFT) 202 on underlay substrate 201, and be positioned at electrode structure 203 on thin film transistor (TFT) 202, this electrode structure 203 comprises pixel electrode 2031 and the public electrode 2032 of mutually insulated, also comprises:
Be positioned at the black matrix 204 of thin film transistor (TFT) 202 tops and the orthogonal projection cover film transistor 202 on underlay substrate 201;
Particularly, the above-mentioned array base palte that the utility model embodiment provides goes for realizing the plane internal switch (IPS at wide visual angle, In-Plane Switch) and senior super dimension field switch (ADS, Advanced Super Dimension Switch) LCDs such as type, do not do restriction at this.Below describe is all that to be applied to ADS type display panels be that example describes.
In the above-mentioned array base palte that the utility model embodiment provides, black matrix and public electrode are electrical connected, and are used for providing common electrode signal to public electrode.Due to the function that adopts the black multiplexing public electrode wire of matrix, be electrical connected and provide common electrode signal to it with public electrode, with respect to arranging separately in prior art and the public electrode wire of grid with layer, can reduce taking of each open area, sub-pix unit, improve the aperture opening ratio of array base palte.And due to will be as the black arranged in matrix of public electrode wire above thin film transistor (TFT), the rete that in the time of can also reducing black matrix and be connected with public electrode, required via hole runs through, have also reduced preparation technology's difficulty.
In the specific implementation, thin film transistor (TFT) in the above-mentioned array base palte that the utility model embodiment provides can adopt the bottom gate type structure, as shown in Fig. 2 a to Fig. 2 c, 2025 form by being successively set on grid 2021, gate insulator 2022, active layer 2023, the source electrode 2024 on underlay substrate 201 and draining, thin film transistor (TFT) 202 in certain array base palte in the specific implementation also can adopt other structures, at this, does not do restriction.
Below as an example of the thin film transistor (TFT) of bottom gate type structure example, the above-mentioned array base palte that the utility model embodiment provides is described.
Preferably, in the above-mentioned array base palte that the utility model embodiment provides, as shown in Fig. 2 a to Fig. 2 c, black matrix 204 as public electrode wire can be set to directly be electrical connected with public electrode 2032, namely between black matrix 204 and public electrode 2032, other retes are not set, arrange with layer with respect to public electrode wire in prior art and grid, public electrode need to be connected with public electrode wire by the via hole that runs through a plurality of retes, can avoid the setting of via hole, reduce preparation technology's difficulty.
In the specific implementation, in the above-mentioned array base palte that the utility model embodiment provides, as shown in Fig. 2 a to Fig. 2 c, black matrix 204 direct and that public electrode 2032 is electrical connected can be set directly on the rete of public electrode 2032, can certainly be set directly at below the rete of public electrode 2032 deceiving matrix 204, at this, be not construed as limiting.
Preferably, as shown in Fig. 2 a to Fig. 2 c, in the above-mentioned array base palte that the utility model embodiment provides, while adopting black matrix 204 to be located immediately at structure on described public electrode 2032, public electrode 2032 and black matrix 204 can be made by a composition technique, namely adopt a gray tone mask plate or intermediate tone mask plate to prepare simultaneously the figure of two retes, need to adopt 10 road Mask to carry out composition with respect to prior art like this, can reduce the access times of Mask, thereby improve the manufacturing efficiency of product, reduce production costs.
Particularly; in the above-mentioned array base palte that the utility model embodiment provides; in order to guarantee that black matrix had both had the opaqueness that thin film transistor (TFT) is carried out the shading protection; have again the electric conductivity of transmitting common electrode signal, can adopt metal material or the opaque organic conductive material material as black matrix.
Particularly; in the above-mentioned array base palte that the utility model embodiment provides; as shown in Figure 2 a; can be the same with prior art; arrange on thin film transistor (TFT) 202 source electrode 2024 and drain electrode 2025 are played the first insulation course 206 of insulation protection effect, and on the first insulation course 206, colored filter 205 is set, this colored filter 205 is generally (red by three primary colors; green, indigo plant) monochromatic filter of cross arrangement forms.And the second insulation course 207 is set between pixel electrode 2031 and public electrode 2032.
Further, in the above-mentioned array base palte that the utility model embodiment provides, as shown in Figure 2 b, can also save the first insulation course 206 in structure shown in Fig. 2 a between thin film transistor (TFT) 202 and electrode structure 203, effect with colored filter 205 multiplexing insulation courses, namely directly be provided as the colored filter 205 of insulation course between thin film transistor (TFT) 202 and electrode structure 203, equally, this colored filter 205 is generally (red by three primary colors, green, indigo plant) monochromatic filter of cross arrangement forms.With respect to structure as shown in Figure 2 a, utilize the function of the multiplexing insulation course of colored filter, can save insulation course is set in addition between source drain and pixel electrode, like this, can reduce in the preparation by one Mask and carry out composition, further improve product manufacturing efficiency, reduce production costs.
Perhaps, further, in the above-mentioned array base palte that the utility model embodiment provides, as shown in Figure 2 c, can also adopt colored filter 205 to replace the second insulation course 207 in structure shown in Fig. 2 a between pixel electrode 2031 and public electrode 2032, the effect of colored filter 205 multiplexing insulation courses, namely be provided as the colored filter 205 of insulation course between pixel electrode 2031 and public electrode 2032, equally, this colored filter 205 is generally (red by three primary colors, green, indigo plant) monochromatic filter of cross arrangement forms.With respect to structure as shown in Figure 2 a, utilize the function of the multiplexing insulation course of colored filter between pixel electrode and public electrode, save the insulation course of other setting, like this, can reduce in the preparation by one Mask and carry out composition, further improve product manufacturing efficiency, reduce production costs.
Based on same utility model design, the utility model embodiment also provides a kind of display device, comprise the above-mentioned array base palte that the utility model embodiment provides, this display device can be: any product or parts with Presentation Function such as mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.The enforcement of this display device can, referring to the embodiment of above-mentioned array base palte, repeat part and repeat no more.
Based on same utility model design, the utility model embodiment also provides a kind of preparation method of array base palte, specifically comprises the following steps:
Form the step of thin film transistor (TFT) on underlay substrate;
Form the step of electrode structure; This electrode structure comprises pixel electrode and the public electrode of mutual insulation;
Form the step of black matrix; Should deceive the orthogonal projection cover film transistor of matrix on underlay substrate; And black matrix and public electrode directly are electrical connected, and being used for provides common electrode signal to public electrode.
Particularly, in the specific implementation, black matrix can be positioned at the top of public electrode, form again black matrix after namely first forming public electrode, certainly public electrode also can be positioned at the top of black matrix, namely first forms black matrix and forms public electrode afterwards again, at this, does not do restriction.
Particularly, when black square was positioned at the public electrode top, the preparation method of the array base palte that the utility model embodiment provides as shown in Figure 3, specifically can comprise the following steps:
Step S101, form thin film transistor (TFT) on underlay substrate;
Step S102, form pixel electrode on thin film transistor (TFT);
Step S103, form the public electrode with the pixel electrode insulation on pixel electrode;
Step S104, form black matrix on public electrode; Should deceive the orthogonal projection cover film transistor of matrix on underlay substrate; And black matrix and public electrode directly are electrical connected, and being used for provides common electrode signal to public electrode.
In the specific implementation, above-mentioned steps S103 forms black matrix at the public electrode and the step S104 that form on pixel electrode with the pixel electrode mutually insulated on public electrode, can adopt one Mask to realize, namely can form by a composition technique figure of public electrode and black matrix, can reduce like this access times of Mask with respect to prior art, improve product manufacturing efficiency, reduce production costs.
Particularly, form the figure of public electrode and black matrix by composition technique, can realize by following manner:
At first, form successively the film of public electrode 2032 and the film of black matrix 204, as shown in Fig. 4 a;
Then, apply photoresist 208 on the film of black matrix, use mask plate to photoresist 208 exposure imagings, as shown in Figure 4 b, obtain photoresist and remove regional a, photoresist part reserve area b and the complete reserve area c of photoresist fully; In the specific implementation, mask plate can be half-tone mask plate or gray mask plate;
Wherein, photoresist part reserve area b is corresponding to the graphics field that forms public electrode 2032, and the complete reserve area c of photoresist is corresponding to the graphics field that forms black matrix 204;
Finally, photoresist is removed regional a, photoresist part reserve area b and the complete reserve area c of photoresist carries out etching fully, form the figure of public electrode 2032 and black matrix 204.
Wherein, photoresist is removed regional a, photoresist part reserve area b and the complete reserve area c of photoresist carries out etching fully, forms the process of the figure of public electrode 2032 and black matrix 204, specifically realize in the following manner:
At first, adopt etching technics to remove photoresist and remove the film of public electrode 2032 of regional a and the film of black matrix 204 fully, obtain the figure of public electrode 2032, as shown in Fig. 4 c;
Then, ashing photoresist 208, get rid of the photoresist 208 of photoresist part reserve area b, as shown in Fig. 4 d;
Then, the employing etching technics removes the film of the black matrix 204 of photoresist part reserve area b, as shown in Fig. 4 e;
Finally, the photoresist 208 of the complete reserve area c of stripping photoresist, obtain the figure of black matrix 204, as shown in Fig. 4 f.
Preferably; in the specific implementation; in order to guarantee that black matrix had both had the opaqueness that thin film transistor (TFT) is carried out the shading protection, have again the electric conductivity of transmitting common electrode signal, can adopt metal material or the opaque organic conductive material material as black matrix.
Further, before forming the step S102 of pixel electrode on thin film transistor (TFT), first form the colored filter as insulation course on thin film transistor (TFT), and this colored filter is comprised of the monochromatic filter of three primary colors (red, green, blue) cross arrangement generally.Preparation method with respect to existing structure, utilize the function of the multiplexing insulation course of colored filter, can save insulation course is set in addition between source drain and pixel electrode, like this, can reduce in the preparation by one Mask and carry out composition, further improve product manufacturing efficiency, reduce production costs.
Perhaps, further, before forming the step S103 of the public electrode that insulate with pixel electrode on pixel electrode, first form the colored filter as insulation course on pixel electrode, and this colored filter generally is comprised of the monochromatic filter of three primary colors (red, green, blue) cross arrangement.Preparation method with respect to existing structure, utilize the function of the multiplexing insulation course of colored filter, can save insulation course is set in addition between pixel electrode and public electrode, like this, can reduce in the preparation by one Mask and carry out composition, further improve product manufacturing efficiency, reduce production costs.
A kind of array base palte and display device that the utility model embodiment provides, this array base palte comprises the thin film transistor (TFT) thin film transistor (TFT) that is positioned on underlay substrate, and be positioned at electrode structure on thin film transistor (TFT), electrode structure comprises pixel electrode and the public electrode of mutually insulated, also comprises: be positioned at thin film transistor (TFT) top and the transistorized black matrix of the orthogonal projection cover film on underlay substrate; Black matrix and public electrode are electrical connected, and are used for providing common electrode signal to public electrode.Due to the function that adopts the black multiplexing public electrode wire of matrix, be electrical connected and provide common electrode signal to it with public electrode, with respect to arranging separately in prior art and the public electrode wire of grid with layer, can reduce taking of each open area, sub-pix unit, improve the aperture opening ratio of array base palte.And due to will be as the black arranged in matrix of public electrode wire above thin film transistor (TFT), the rete that in the time of can also reducing black matrix and be connected with public electrode, required via hole runs through, have also reduced preparation technology's difficulty.
Obviously, those skilled in the art can carry out various changes and modification and not break away from spirit and scope of the present utility model the utility model.Like this, if within of the present utility model these are revised and modification belongs to the scope of the utility model claim and equivalent technologies thereof, the utility model also is intended to comprise these changes and modification interior.
Claims (7)
1. an array base palte, comprise underlay substrate, is positioned at the thin film transistor (TFT) on described underlay substrate, and be positioned at the electrode structure on described thin film transistor (TFT), and described electrode structure comprises pixel electrode and the public electrode of mutually insulated, it is characterized in that, also comprises:
Be positioned at the black matrix that described thin film transistor (TFT) top and the orthogonal projection on described underlay substrate cover described thin film transistor (TFT);
Described black matrix and described public electrode are electrical connected, and being used for provides common electrode signal to described public electrode.
2. array base palte as claimed in claim 1, is characterized in that, described black matrix and described public electrode directly are electrical connected.
3. array base palte as claimed in claim 2, is characterized in that, described black matrix is located immediately on described public electrode.
4., as the described array base palte of claim 1-3 any one, it is characterized in that, described black matrix is metal material or opaque organic conductive material.
5. array base palte as claimed in claim 1, is characterized in that, also comprises: between described thin film transistor (TFT) and described electrode unit and as the colored filter of insulation course.
6. array base palte as claimed in claim 1, is characterized in that, also comprises; Between described pixel electrode and described public electrode and as the colored filter of insulation course.
7. a display device, is characterized in that, comprises as the described array base palte of claim 1-6 any one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013203642345U CN203299499U (en) | 2013-06-24 | 2013-06-24 | Array substrate and display device |
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| CN2013203642345U CN203299499U (en) | 2013-06-24 | 2013-06-24 | Array substrate and display device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103353699A (en) * | 2013-06-24 | 2013-10-16 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
| CN104460147A (en) * | 2014-11-20 | 2015-03-25 | 深圳市华星光电技术有限公司 | Thin film transistor array substrate, manufacturing method and display device |
| CN107817624A (en) * | 2016-09-12 | 2018-03-20 | 三星显示有限公司 | Display device |
| US10338444B2 (en) | 2015-06-19 | 2019-07-02 | Boe Technology Group Co., Ltd. | Array substrate with conductive black matrix, manufacturing method thereof and display device |
| WO2020113599A1 (en) * | 2018-12-03 | 2020-06-11 | 惠科股份有限公司 | Active switch and manufacturing method thereof, and display device |
| CN113376904A (en) * | 2020-03-10 | 2021-09-10 | 成都京东方光电科技有限公司 | Single-color liquid crystal display panel and double-layer liquid crystal display device |
| CN114578590A (en) * | 2020-11-30 | 2022-06-03 | 合肥京东方显示技术有限公司 | Array substrate and broken line repairing method thereof |
-
2013
- 2013-06-24 CN CN2013203642345U patent/CN203299499U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103353699A (en) * | 2013-06-24 | 2013-10-16 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
| WO2014206015A1 (en) * | 2013-06-24 | 2014-12-31 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof, and display apparatus |
| US9589834B2 (en) | 2013-06-24 | 2017-03-07 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof, and display device |
| CN104460147A (en) * | 2014-11-20 | 2015-03-25 | 深圳市华星光电技术有限公司 | Thin film transistor array substrate, manufacturing method and display device |
| WO2016078170A1 (en) * | 2014-11-20 | 2016-05-26 | 深圳市华星光电技术有限公司 | Thin-film transistor array substrate, manufacturing method, and display device |
| CN104460147B (en) * | 2014-11-20 | 2018-01-09 | 深圳市华星光电技术有限公司 | Thin-film transistor array base-plate, manufacture method and display device |
| US10338444B2 (en) | 2015-06-19 | 2019-07-02 | Boe Technology Group Co., Ltd. | Array substrate with conductive black matrix, manufacturing method thereof and display device |
| CN107817624A (en) * | 2016-09-12 | 2018-03-20 | 三星显示有限公司 | Display device |
| WO2020113599A1 (en) * | 2018-12-03 | 2020-06-11 | 惠科股份有限公司 | Active switch and manufacturing method thereof, and display device |
| CN113376904A (en) * | 2020-03-10 | 2021-09-10 | 成都京东方光电科技有限公司 | Single-color liquid crystal display panel and double-layer liquid crystal display device |
| CN114578590A (en) * | 2020-11-30 | 2022-06-03 | 合肥京东方显示技术有限公司 | Array substrate and broken line repairing method thereof |
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Granted publication date: 20131120 |