CN114578590A

CN114578590A - Array substrate and broken line repairing method thereof

Info

Publication number: CN114578590A
Application number: CN202011383130.XA
Authority: CN
Inventors: 陈平; 刘涛; 尹磊; 汤晨; 胡海涛; 王彬
Original assignee: BOE Technology Group Co Ltd; Hefei BOE Display Lighting Co Ltd
Current assignee: BOE Technology Group Co Ltd; Hefei BOE Display Lighting Co Ltd
Priority date: 2020-11-30
Filing date: 2020-11-30
Publication date: 2022-06-03

Abstract

The invention relates to the technical field of display, and provides an array substrate and a broken line repairing method thereof. The array substrate comprises a broken circuit lead arranged on a substrate and a first electrode arranged on one side, far away from the substrate, of the broken circuit lead in an insulating mode, the broken circuit lead is provided with at least two broken circuit points, and the broken circuit repairing method comprises the following steps: cutting the first electrode to form a connecting part, wherein the connecting part is separated and insulated from the first electrode, and the orthographic projection of at least two breaking points on the substrate base plate is positioned in the orthographic projection of the connecting part on the substrate base plate; stripping part of the connecting part to expose the broken wire to form at least two exposed parts, wherein the exposed parts are superposed with the broken point or are positioned at the position of the broken wire close to the broken point; at least two exposed parts are connected with the connecting part into a whole. The connecting part is separated and insulated from the first electrode, the broken wire cannot be influenced, and the voltage of other wires cannot be introduced, so that bright and dark spots cannot be generated after repair, and the product grade is improved.

Description

Array substrate and broken line repairing method thereof

Technical Field

The invention relates to the technical field of display, in particular to an array substrate and a broken line repairing method of the array substrate.

Background

The ADS type liquid crystal panel (Advanced-Super dimension Switching) forms a multidimensional electric field by a parallel electric field generated by the edge of a pixel electrode or a common electrode in the same plane and a longitudinal electric field generated between the pixel electrode and the common electrode, so that all oriented liquid crystal molecules in a liquid crystal box between the pixel electrode or the common electrode and right above the pixel electrode or the common electrode can generate rotation conversion, thereby improving the working efficiency of a planar oriented liquid crystal and the light transmission efficiency. The ADS type liquid crystal display panel can improve the picture quality of a TFT-LCD (Thin film transistor liquid crystal display), and has the advantages of high transmittance, wide viewing angle, high aperture ratio, low chromatic aberration, low response time, no extrusion ripple (Push Mura) and the like. In order to increase the Aperture Ratio, a HADS (High Aperture Ratio-advanced super dimensional field switching) type liquid crystal panel is currently used.

In the manufacturing process of the liquid crystal display panel, repairing the broken line is an important means for improving the yield. However, at present, the Com compensation structure and the Com line 11 are generally used for maintaining and breaking the line, and bright and dark points are generated after the maintenance by the method; and is not suitable for the disconnection maintenance of the HADS type liquid crystal panel.

The above information disclosed in the background section is only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute prior art that is known to a person of ordinary skill in the art.

Disclosure of Invention

The present invention is directed to overcome the defect that the above-mentioned prior art HADS type liquid crystal panel cannot be repaired by breaking wires, and to provide a method for repairing broken wires of an array substrate applied to the HADS type liquid crystal panel.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

According to one aspect of the present disclosure, there is provided a method for repairing a broken wire of an array substrate, the array substrate including a broken wire disposed on a substrate, the broken wire having at least two broken points, and a first electrode insulated from a side of the broken wire away from the substrate, the method comprising:

cutting the first electrode to form a connecting part, wherein the connecting part is separated and insulated from the first electrode, and the orthographic projection of at least two circuit breaking points on the substrate base plate is positioned in the orthographic projection of the connecting part on the substrate base plate;

stripping part of the connecting part to expose the broken wire to form at least two exposed parts, wherein the exposed parts are superposed with the broken point, or the exposed parts are positioned at the position of the broken wire close to the broken point;

and connecting at least two exposed parts and the connecting part into a whole.

In an exemplary embodiment of the present disclosure, cutting the first electrode to form a connection part includes:

cutting the first electrode along the extending direction of the circuit breaking lead and in at least two gaps between the circuit breaking lead and at least two adjacent conductive parts to form at least two first cutting grooves;

cutting the first electrode along a direction perpendicular to the extending direction of the broken lead to form at least two second cutting grooves;

the first cutting groove and the second cutting groove are connected to form a closed annular groove, and the first electrode surrounded by the annular groove forms the connecting part.

In an exemplary embodiment of the present disclosure, the array substrate further includes a first conductive line and a second conductive line, the first conductive line is disposed on one side of the substrate, the second conductive line is disposed on one side of the first conductive line away from the substrate in an insulated manner, and an orthographic projection of the first conductive line on the substrate intersects an orthographic projection of the second conductive line on the substrate.

In an exemplary embodiment of the present disclosure, the disconnection conductive line is the first conductive line, and two disconnection points are located at both sides of the second conductive line;

when the first electrode is cut along the extending direction of the circuit breaking lead, the cutting is deepest to the side, away from the substrate, of the second lead;

and cutting the first electrode along the direction vertical to the extending direction of the broken lead to the side of the first lead far away from the substrate.

In an exemplary embodiment of the present disclosure, the disconnection conductive line is the second conductive line or the first conductive line;

when the first electrode is cut along the extending direction of the circuit breaking lead, the cutting is deepest to the side of the second lead far away from the substrate or the side of the first lead far away from the substrate;

and cutting the first electrode along the direction vertical to the extending direction of the open circuit conducting wire until the second conducting wire is far away from one side of the substrate base plate or the first conducting wire is far away from one side of the substrate base plate.

In an exemplary embodiment of the disclosure, the array substrate further includes a black matrix disposed on a side of the first electrode away from the substrate, and an orthogonal projection of the first conducting wire on the substrate is located within an orthogonal projection of the black matrix on the substrate.

In an exemplary embodiment of the present disclosure, the black matrix is cut simultaneously when the first electrode is cut to form a connection portion and when the first electrode provided with the black matrix is cut;

the black matrix is peeled off simultaneously when a part of the connection portion is peeled off and when the first electrode provided with the black matrix is peeled off.

In an exemplary embodiment of the present disclosure, the first conductive line is a gate line, the second conductive line is a data line, and the first electrode is a common electrode.

In an exemplary embodiment of the present disclosure, the first electrode is cut by a laser cutting process, and a laser wavelength of the laser cutting process is 355nm when the first electrode is cut in a direction perpendicular to an extending direction of the open wire;

and connecting the exposed part and the connecting part into a whole through a laser welding process.

According to an aspect of the present disclosure, there is provided an array substrate repaired by the method for repairing a broken line as described in any one of the above.

According to the technical scheme, the invention has at least one of the following advantages and positive effects:

the invention discloses a broken line repairing method of an array substrate, which comprises the steps of cutting a first electrode to form a connecting part, separating and insulating the connecting part from the first electrode, and enabling the orthographic projections of at least two broken points on a substrate to be positioned in the orthographic projections of the connecting part on the substrate; stripping part of the connecting part to expose the broken wire to form at least two exposed parts, wherein the exposed parts are superposed with the broken point or are positioned at the position of the broken wire close to the broken point; at least two exposed parts are connected with the connecting part into a whole. On one hand, the connecting part is separated and insulated from the first electrode, so that the signal of the first electrode cannot influence the connecting part, and the broken wire cannot be influenced; on the other hand, compared with bright and dark points generated after repair by other repair methods, the method does not introduce the voltage of other wires, so that the bright and dark points are not generated after repair, and the product grade can be better improved; on the other hand, the broken wire is repaired by cutting the connecting part formed by the first electrode, and the number of the repaired broken wires is not limited.

Drawings

The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

Fig. 1 is a schematic block flow diagram illustrating an exemplary embodiment of a method for repairing a broken line of an array substrate according to the present invention;

FIG. 2 is a schematic structural diagram of an array substrate according to the present invention;

FIG. 3 is a schematic structural diagram of a first exemplary embodiment of a method for repairing a broken line of an array substrate according to the present invention;

FIG. 4 is an enlarged partial schematic view of the portion indicated by H in FIG. 3;

FIG. 5 is a schematic structural diagram of a broken line repairing method of an array substrate according to a second exemplary embodiment of the present invention;

FIG. 6 is an enlarged partial schematic view of the portion indicated by I in FIG. 5;

fig. 7 is a schematic structural diagram of a broken line repairing method of an array substrate according to a third exemplary embodiment of the present invention;

FIG. 8 is an enlarged partial view of the portion indicated by M in FIG. 7;

fig. 9 is a schematic structural diagram of a broken line repairing method of an array substrate according to a fourth exemplary embodiment of the present invention;

fig. 10 is a partially enlarged schematic view of a portion denoted by N in fig. 9.

The reference numerals of the main elements in the figures are explained as follows:

1. a base substrate; 2. a gate electrode;

3. a gate line (first conductive line); 4. a gate insulating layer;

51. an active layer; 52. a semiconductor pattern;

61. a source electrode; 62. a drain electrode;

7. a pixel electrode; 8. a data line (second conductive line); 9. a protective layer;

10. a common electrode (first electrode); 101. a connecting portion;

11. a COM line;

121. a first cutting groove; 122. and a second cutting groove.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

The present exemplary embodiment first provides a method for repairing a broken line of an array substrate, where the array substrate includes a broken line conductor disposed on a substrate 1 and a first electrode 10 disposed on a side of the broken line conductor away from the substrate 1 in an insulated manner, and the broken line conductor has at least two broken points, referring to a schematic flow chart of an exemplary embodiment of a method for repairing a broken line of an array substrate according to the present invention shown in fig. 1; the broken line repairing method can comprise the following steps:

step S10, cutting the first electrode 10 to form a connecting portion 101, where the connecting portion 101 is separated and insulated from the first electrode 10, and an orthogonal projection of at least two of the disconnection points on the substrate board 1 is located within an orthogonal projection of the connecting portion 101 on the substrate board 1.

Step S20, stripping off a portion of the connection portion 101 to expose the open-circuit wire to form at least two exposed portions, where the exposed portions are overlapped with the open-circuit point, or the exposed portions are located at a position of the open-circuit wire close to the open-circuit point.

Step S30, integrally connecting the at least two exposed portions to the connecting portion 101.

According to the method for repairing the broken line of the array substrate, on one hand, the connecting part 101 is separated from the first electrode 10 for insulation, so that the signal of the first electrode 10 cannot influence the connecting part 101, and therefore the broken line conducting wire cannot be influenced; on the other hand, compared with bright and dark points generated after repair by other repair methods, the method does not introduce the voltage of other wires, so that the bright and dark points are not generated after repair, and the product grade can be better improved; on the other hand, the broken wire is repaired by cutting the connection part 101 created by the first electrode 10, and the number of the broken wire repairs is not limited.

Referring to fig. 2, a schematic structural diagram of the array substrate is shown; the array substrate is applied to a HADS type display panel, and may include a substrate 1, a gate electrode 2, a gate line 3 (not shown due to a cut positional relationship), a gate insulating layer 4, a semiconductor layer, a source electrode 61, a drain electrode 62, a pixel electrode 7, a data line 8, a protective layer 9, and a common electrode 10; the grid 2 and the grid line 3 are arranged on one side of the substrate 1, and the grid 2 is connected with the grid line 3; the gate insulating layer 4 is arranged on one side of the gate electrode 2 and the gate line 3 away from the substrate base plate 1; a semiconductor layer is arranged on one side of the gate insulating layer 4 far away from the substrate base plate 1, and comprises an active layer 51 and a semiconductor pattern 52; the source electrode 61 and the drain electrode 62 are provided on the side of the active layer 51 away from the base substrate 1; the data line 8 is provided on the side of the semiconductor pattern 52 away from the base substrate 1; the pixel electrode 7 is arranged on one side of the source electrode 61 and the gate insulating layer 4 away from the substrate base plate 1; the protective layer 9 is arranged on one side of the pixel electrode 7, the source and drain electrode 6 and the data line 8, which is far away from the substrate base plate 1; the common electrode 10 is disposed on a side of the protective layer 9 away from the substrate 1, that is, the common electrode 10 is disposed on an upper layer of the data line 8, the gate line 3, and the pixel electrode 7, and the common electrode 10 is a surface electrode. The gate electrode 2, the source electrode 61, the drain electrode 62, and the active layer 51 form a thin film transistor. A black matrix (not shown in the figure) may be further disposed on a side of the common electrode 10 away from the substrate base plate 1, and an orthographic projection of the thin film transistor on the substrate base plate 1 and an orthographic projection of the gate line 3 on the substrate base plate 1 are located within an orthographic projection of the black matrix on the substrate base plate 1.

Referring to fig. 3-10, a schematic top view of the array substrate is shown; the common electrode 10 is connected with the COM line 11 to form a planar structure; the plurality of pixel electrodes 7 are arranged in an array, and the plurality of pixel electrodes 7 and the common electrode 10 overlap spatially, that is, an orthogonal projection of the pixel electrode 7 on the substrate 1 and an orthogonal projection of the common electrode 10 on the substrate 1 overlap each other. The data line 8 is disposed between two adjacent pixel electrodes 7. The data lines 8 extend in the first direction F1, the COM lines 11 also extend in the first direction F1, and the data lines 8 and the COM lines 11 are alternately arranged at intervals, that is, one COM line 11 is disposed between two adjacent data lines 8, and one data line 8 is disposed between two adjacent COM lines 11. The gate lines 3 are arranged in a zigzag shape, and the gate lines 3 extend in a second direction F2, the first direction F1 being substantially perpendicular to the second direction F2. The data line 8 and the gate line 3 spatially overlap at the bend of the gate line 3.

The first conducting wire 3 is taken as a grid line 3, and the second conducting wire 8 is taken as a data line 8; the method for repairing broken lines of the array substrate will be described in detail by taking the common electrode 10 as an example of the first electrode 10.

Referring to fig. 3 and 4, the open circuit conductive line is the second conductive line 8, that is, the open circuit conductive line is the data line 8, and both open circuit points are located between two adjacent pixel electrodes 7 and are not located at a position overlapping the gate line 3.

The specific process of broken line repair is as follows:

first, in the extending direction of the data line 8 (i.e., in the first direction F1), the common electrode 10 is cut by a laser cutting process to form two first cutting grooves 121 in two gaps between the data line 8 and the pixel electrodes 7 on both sides thereof. By cutting the common electrode 10 in the gap, the influence on the pixel electrode 7 can be avoided. The length of the first cutting groove 121 is greater than the distance between two break points of the data line 8, and the requirement that the subsequent welding operation can be smoothly performed needs to be satisfied, and the length of the first cutting groove 121 is greater than or equal to 20 μm and less than or equal to 1100 μm. The depth of the first cutting groove 121 is greater than the thickness of the common electrode 10, that is, this cutting is to cut not only the common electrode 10 but also a part of the protection layer 9 or the whole protection layer 9 to ensure that the formed connection portion 101 is completely separated from the common electrode 10, that is, the cutting is deepest to the side of the data line 8 away from the substrate 1; the depth of the first cutting groove 121 is 1.5 μm or more and 6 μm or less. It is necessary to ensure that the first cutting grooves 121 have no residual material of the common electrode 10 after cutting. The wavelength of this laser cut is about 532nm and the energy is about 350 muj.

Then, in a direction perpendicular to the data line 8 (i.e., in the second direction F2), the common electrode 10 is cut by a laser cutting process to form two second cut grooves 122, and the two second cut grooves 122 are located at two end portions of the first cut groove 121 in a one-to-one correspondence; the length of the second cutting groove 122 is equal to or greater than the distance between the two first cutting grooves 121, so that the first cutting groove 121, the second cutting groove 122, the other first cutting groove 121 and the other second cutting groove 122 are connected end to form a closed rectangular annular groove, and the common electrode 10 surrounded by the rectangular annular groove forms the connecting part 101. The second cutting groove 122 exposes the data line 8, that is, the depth of the second cutting groove 122 is greater than or equal to the sum of the thickness of the common electrode 10 and the thickness of the protective layer 9, that is, the cutting is stopped to the side of the data line 8 far away from the substrate 1; the depth of the second cut groove 122 is 1.5 μm or more and 3 μm or less. After cutting, it is necessary to ensure that the second cutting groove 122 has no residual material of the common electrode 10. The wavelength of this laser cut is about 355nm and the energy is about 80 muj. Of course, in other exemplary embodiments of the present invention, the direction of the second cutting groove 122 may not be perpendicular to the first cutting groove 121, and may have some inclination; and the second cutting groove 122 may be cut in an arc shape.

Next, the connection portion 101 of the stripped portion, i.e. the stripped portion of the common electrode 10 and the protection layer 9, is stripped to expose the data line 8 to form at least two exposed portions, and the exposed portions may coincide with the disconnection point, and of course, the exposed portions may also be located at a position of the data line 8 close to the disconnection point.

Finally, the exposed portion of the data line 8 and the connecting portion 101 are welded together by a laser welding process. The laser welding process has a wavelength of about 532nm and an energy of about 1000 muj.

Referring to fig. 5 and 6, the open circuit conductive line is the second conductive line 8, that is, the open circuit conductive line is the data line 8, two open circuit points are located between two adjacent pixel electrodes 7, and the two open circuit points are located on two sides of the gate line 3 in a one-to-one correspondence manner, that is, the open circuit points are located at the overlapping position of the data line 8 and the gate line 3.

The specific process of broken line repair is as follows:

first, in the extending direction of the data line 8 (i.e., in the first direction F1), two first cutting grooves 121 are formed by cutting the common electrode 10 through a laser cutting process in two gaps between the data line 8 and the pixel electrodes 7 on both sides thereof. By cutting the common electrode 10 in the gap, the influence on the pixel electrode 7 can be avoided. The length of the first cutting groove 121 is greater than the distance between two break points of the data line 8, and the requirement that the subsequent welding operation can be smoothly performed needs to be satisfied, and the length of the first cutting groove 121 is greater than or equal to 20 μm and less than or equal to 1100 μm. The depth of the first cutting groove 121 is greater than the thickness of the common electrode 10, that is, this cutting is to cut not only the common electrode 10 but also a part of the protection layer 9 or the whole protection layer 9 to ensure that the formed connection portion 101 is completely separated from the common electrode 10, that is, the cutting is deepest to the side of the data line 8 away from the substrate 1; the depth of the first cutting groove 121 is 1.5 μm or more and 6 μm or less. It is necessary to ensure that the first cutting grooves 121 have no residual material of the common electrode 10 after cutting. The wavelength of this laser cut is approximately 532nm and the energy is approximately 350 muJ. However, since the black matrix is disposed right above the gate line 3, the black matrix needs to be cut at the same time when the portion of the common electrode 10 is cut, and the laser cutting wavelength is about 349nm and the energy is about 50 μ J.

Finally, the exposed portion of the data line 8 is welded to the connection portion 101 by a laser welding process. The laser welding process has a wavelength of about 532nm and an energy of about 1000 muj.

Referring to fig. 7 and 8, the open circuit conductive line is the first conductive line 3, that is, the open circuit conductive line is the gate line 3, two open circuit points are located between two adjacent pixel electrodes 7, and the open circuit point is not located at the overlapping position of the data line 8 and the gate line 3.

The specific process of broken line repair is as follows:

first, in two gaps between the gate line 3 and the pixel electrodes 7 on both sides thereof in the extending direction of the gate line 3, the common electrode 10 is cut by a laser cutting process to form two first cut grooves 121. By cutting the common electrode 10 in the gap, the influence on the pixel electrode 7 can be avoided. The length of the first cutting groove 121 is greater than the distance between two break points of the broken wire, and the requirement that the subsequent welding operation can be smoothly performed needs to be satisfied, and the length of the first cutting groove 121 is greater than or equal to 20 μm and less than or equal to 1100 μm. The depth of the first cutting groove 121 is greater than the thickness of the common electrode 10, that is, the cutting is to cut not only the common electrode 10 but also a part of the protective layer 9 or the entire protective layer 9, and may also be to cut not only the common electrode 10 and the protective layer 9 but also a part of the gate insulating layer 4 or the entire gate insulating layer 4, so as to ensure that the formed connection portion 101 is completely separated from the common electrode 10, that is, the cutting is cut to the deepest extent until the gate line 3 is far away from the side of the substrate 1; the depth of the first cutting groove 121 is 1.5 μm or more and 6 μm or less. It is necessary to ensure that the first cutting grooves 121 have no residual material of the common electrode 10 after cutting. The wavelength of this laser cut is about 532nm and the energy is about 350 muj.

Then, cutting the common electrode 10 by a laser cutting process along a direction perpendicular to the gate line 3 to form two second cutting grooves 122, wherein the two second cutting grooves 122 are located at two end portions of the first cutting groove 121 in a one-to-one correspondence manner; the length of the second cutting groove 122 is equal to or greater than the distance between the two first cutting grooves 121, so that the first cutting groove 121, the second cutting groove 122, the other first cutting groove 121 and the other second cutting groove 122 are connected end to form a closed rectangular annular groove, and the common electrode 10 surrounded by the rectangular annular groove forms the connecting part 101. Since the black matrix is disposed right above the gate line 3, the black matrix needs to be cut when the common electrode 10 is cut this time. The second cutting groove 122 exposes the gate line 3, that is, the depth of the second cutting groove 122 is greater than or equal to the sum of the thickness of the black matrix, the thickness of the common electrode 10, the thickness of the protective layer 9 and the thickness of the gate insulating layer 4, that is, the cutting is stopped to one side of the gate line 3 away from the substrate 1; the depth of the second cut groove 122 is 1.5 μm or more and 3 μm or less. After cutting, it is necessary to ensure that the second cutting groove 122 has no residual material of the common electrode 10. The wavelength of this laser cut is about 355nm and the energy is about 80 muj. Of course, in other exemplary embodiments of the present invention, the direction of the second cutting groove 122 may not be perpendicular to the first cutting groove 121, and may have some inclination; and the second cutting groove 122 may be cut in an arc shape.

Next, the connection portion 101 is stripped, that is, a part of the black matrix, a part of the common electrode 10, a part of the protection layer 9, and a part of the gate insulating layer 4 are stripped, so that the gate line 3 is exposed to form at least two exposed portions, which may be overlapped with the open point, and of course, the exposed portions may also be located at a position of the gate line 3 close to the open point.

Finally, the exposed part of the gate line 3 is welded to the connection part 101 by a laser welding process. The laser welding process has a wavelength of about 532nm and an energy of about 1000 muj.

Referring to fig. 9 and 10, the open circuit conductive line is the first conductive line 3, that is, the open circuit conductive line is the gate line 3, two open circuit points are located between two adjacent pixel electrodes 7, and two open circuit points are located on two opposite sides of the data line 8, that is, the open circuit points are located at the overlapping portion of the data line 8 and the gate line 3. The overlapping position is just the bending position of the grid line 3, so that the extending directions of the grid lines 3 where the two breaking points are located are not consistent.

The specific process of broken line repair is as follows:

first, in two gaps between the gate line 3 and the pixel electrodes 7 on both sides thereof in the extending direction of the gate line 3, the common electrode 10 is cut by a laser cutting process to form two first cut grooves 121. Since the gate line 3 is bent at the broken line, a first cutting groove 121 is formed to be bent, and the first cutting groove 121 is located in the bending angle of the gate line 3; the other first cutting groove 121 has both end portions aligned with the extending direction of the gate line 3 and a middle portion between the end portions substantially perpendicular to the data line 8 to cross the data line 8. By cutting the common electrode 10 in the gap, the influence on the pixel electrode 7 can be avoided. The length of the first cutting groove 121 is greater than the distance between two break points of the broken wire, and the requirement that the subsequent welding operation can be smoothly performed needs to be satisfied, and the length of the first cutting groove 121 is greater than or equal to 20 muj and less than or equal to 1100 muj. The depth of the first cutting groove 121 is greater than the thickness of the common electrode 10, and because the first cutting groove 121 needs to cross over the data line 8, the cutting needs to cut not only the common electrode 10 but also a part of the protective layer 9 or the whole protective layer 9, so as to ensure that the formed connecting part 101 is completely separated from the common electrode 10 and the data line 8 below the protective layer 9 is not affected, that is, the cutting is deepest to the side of the data line 8 away from the substrate base plate 1; the cutting can also be performed on the data line 8 to cut the data line 8 to the side far away from the substrate 1, and the cutting can be performed to the side far away from the substrate 1 of the gate line 3 at the rest, so that the laser energy needs to be adjusted in the cutting process. The depth of the first cutting groove 121 is 1.5 μm or more and 6 μm or less. It is necessary to ensure that the first cutting grooves 121 have no residual material of the common electrode 10 after cutting. The wavelength of this laser cut is approximately 532nm and the energy is approximately 350 muJ.

Then, cutting the common electrode 10 by a laser cutting process along a direction perpendicular to the gate line 3 to form two second cutting grooves 122, wherein the two second cutting grooves 122 are located at two end portions of the first cutting groove 121 in a one-to-one correspondence manner; the length of the second cutting groove 122 is equal to or greater than the distance between the two first cutting grooves 121, so that the first cutting groove 121, the second cutting groove 122, the other first cutting groove 121 and the other second cutting groove 122 are connected end to form a closed annular cutting groove, and the common electrode 10 surrounded by the closed annular cutting groove forms the connecting portion 101. Since the black matrix is disposed right above the gate line 3, the black matrix needs to be cut when the common electrode 10 is cut this time. The second cutting groove 122 exposes the gate line 3, that is, the depth of the second cutting groove 122 is greater than or equal to the sum of the thickness of the black matrix, the thickness of the common electrode 10, the thickness of the protective layer 9 and the thickness of the gate insulating layer 4, that is, the cutting is cut off to one side of the gate line 3 away from the substrate 1; the depth of the second cut groove 122 is 1.5 μm or more and 3 μm or less. After cutting, it is necessary to ensure that the second cutting groove 122 has no residual material of the common electrode 10. The wavelength of this laser cut is about 355nm and the energy is about 80 muj. Of course, in other exemplary embodiments of the present invention, the direction of the second cutting groove 122 may not be perpendicular to the first cutting groove 121, and may have some inclination; and the second cutting groove 122 may be cut in an arc shape.

In other exemplary embodiments of the present invention, the open-circuit wire may have three, four or more open-circuit points, and three, four or more open-circuit points need to be connected together, for example, a short circuit at an intersection of a three-prong wire and a four-prong wire, may be repaired by the repairing method of the present invention.

Further, the present exemplary embodiment also provides an array substrate, which is repaired by any one of the above-mentioned methods for repairing a broken line. The broken line repairing method has already been described in detail above, and therefore, the detailed description thereof is omitted here.

The array substrate can be applied to a display panel which is a HADS type liquid crystal panel. The detailed structure of the display panel is described above, and therefore, the detailed description is omitted here. The method for repairing the broken lines can improve the yield of the array substrate, thereby improving the yield of the HADS type liquid crystal panel.

The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments, and the features discussed in connection with the embodiments are interchangeable, if possible. In the above description, numerous specific details are provided to give a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of the invention.

The terms "about" and "approximately" as used herein generally mean within 20%, preferably within 10%, and more preferably within 5% of a given value or range. The amounts given herein are approximate, meaning that the meaning of "about", "approximately" or "approximately" may still be implied without specific recitation.

Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". Other relative terms, such as "high", "low", "top", "bottom", and the like, are also intended to have similar meanings. When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.

In this specification, the terms "a", "an", "the", "said" and "at least two" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first," "second," and "third," etc. are used merely as labels, and are not limiting on the number of their objects.

It is to be understood that the invention is not limited in its application to the details of construction and the arrangement of components set forth in the description. The invention is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications fall within the scope of the present invention. It will be understood that the invention disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute alternative aspects of the present invention. The embodiments described in this specification illustrate the best mode known for carrying out the invention and will enable those skilled in the art to utilize the invention.

Claims

1. A broken line repairing method of an array substrate is characterized in that the array substrate comprises a broken circuit conducting wire arranged on a substrate and a first electrode arranged on one side, far away from the substrate, of the broken circuit conducting wire in an insulating mode, the broken circuit conducting wire is provided with at least two broken circuit points, and the broken line repairing method comprises the following steps:

and connecting at least two exposed parts and the connecting part into a whole.

2. The method for repairing broken wires of the array substrate according to claim 1, wherein the cutting the first electrode to form the connection part comprises:

cutting the first electrode along the extending direction of the broken lead and in at least two gaps between the broken lead and at least two adjacent conductive parts to form at least two first cutting grooves;

3. The method for repairing a broken wire of an array substrate according to claim 2, wherein the array substrate further comprises a first conducting wire and a second conducting wire, the first conducting wire is disposed on one side of the substrate, the second conducting wire is disposed on one side of the first conducting wire away from the substrate in an insulated manner, and an orthographic projection of the first conducting wire on the substrate intersects with an orthographic projection of the second conducting wire on the substrate.

4. The method for repairing a broken line of an array substrate of claim 3, wherein the broken line is the first line, and two of the breaking points are located on two sides of the second line;

when the first electrode is cut along the extending direction of the open circuit conducting wire, the first electrode is cut to the deepest part until the second conducting wire is far away from one side of the substrate base plate;

5. The method for repairing a broken line of an array substrate of claim 3, wherein the broken line is the second line or the first line;

6. The method for repairing a broken wire of the array substrate according to claim 3, wherein the array substrate further comprises a black matrix disposed on a side of the first electrode away from the substrate, and an orthogonal projection of the first conductive wire on the substrate is located within an orthogonal projection of the black matrix on the substrate.

7. The method for repairing a broken line of an array substrate according to claim 6, wherein the black matrix is cut simultaneously when the first electrode is cut to form a connection portion and when the first electrode provided with the black matrix is cut;

8. The method for repairing a broken line of an array substrate according to claim 3, wherein the first conductive line is a gate line, the second conductive line is a data line, and the first electrode is a common electrode.

9. The array substrate broken line repairing method according to claim 1, wherein the first electrode is cut by a laser cutting process, and when the first electrode is cut in a direction perpendicular to an extending direction of the broken line, a laser wavelength of the laser cutting process is 355 nm;

10. An array substrate, characterized in that the array substrate is repaired by the method for repairing a broken line according to any one of claims 1 to 9.