CN203295657U - Seed crystal chuck for growth of sapphire crystal by kyropoulos method - Google Patents
Seed crystal chuck for growth of sapphire crystal by kyropoulos method Download PDFInfo
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- CN203295657U CN203295657U CN2013202075785U CN201320207578U CN203295657U CN 203295657 U CN203295657 U CN 203295657U CN 2013202075785 U CN2013202075785 U CN 2013202075785U CN 201320207578 U CN201320207578 U CN 201320207578U CN 203295657 U CN203295657 U CN 203295657U
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Abstract
The utility model belongs to the fields of growth technology and equipment of sapphire single crystals and in particular relates to a seed crystal chuck for growth of a sapphire crystal by a kyropoulos method. The seed crystal chuck is characterized in that upper grooves, middle convex grooves and lower grooves are formed in the seed crystal chuck; the middle convex grooves are round convex grooves; the upper grooves and the lower grooves adopt shallow groove structures. The utility model adopts new seed crystal chuck design, the middle round convex groove structure enables a seed crystal to bear most of a force in a growth process, and the seed crystal can be fixed without an expensive tungsten-rhenium wire with high using strength requirement, so that the cost is reduced greatly. More importantly, the upper grooves and the lower grooves are notched shallowly, so the seed crystal is unlikely to break off; the middle convex grooves enable the seed crystal not to be separated from a seed crystal rod, so that the problem that the seed crystal drops is eliminated and the success rate of crystal growth is increased.
Description
Technical field
The utility model belongs to sapphire single-crystal (alumina single crystal) growing technology and apparatus field, specifically a kind of kyropoulos sapphire crystal growth seed chuck.
Background technology
the sapphire aluminum oxide that consists of, because it has the high velocity of sound, high temperature resistant, anticorrosive, high rigidity, high light transmittance, the characteristics such as fusing point high (2045 ℃), be used in a large number optical element at present, infrared facility, on the radium-shine lens materials of high strength and photomask materials, it is a kind of suitable difficult to machine material simultaneously, and require high for its stress of sapphire crystal and the defect of optics and LED substrate, although crystal pulling method since over half a century, occurred successively, heat-exchanging method, the sapphire growth technology such as Bridgman method and reverse mould method, at present the technology of the most ripe growing large-size low-stress zero defect sapphire crystal still or kyropoulos (or KY method), the method contacts a seed crystal of catching a cold with melt, if the temperature at interface is lower than zero pour, seed crystal starts growth, in order to make crystal, constantly grow up, just need to reduce gradually the temperature of melt, the while rotating crystal, to improve the temperature distribution of melt, also can be slowly carry crystal on (or stage by stage), to enlarge radiating surface.Crystal in process of growth or growth with sidewall of crucible, do not contact while finishing, this has just greatly reduced the stress of crystal.
Adopt the concrete technology of kyropoulos growth major diameter, high quality, colourless sapphire crystal as follows:
1. pure alumina raw material is packed in crucible.Rotatable and lifting rod lifting is equipped with in the crucible top, and there is a seed holder lower end of bar, and the colourless sapphire seed crystal of an orientation is housed thereon;
2. by more than crucible heating to 2050 ℃, reduce lifting rod, seed crystal is inserted in melt;
3. control the temperature of melt, make the liquid level temperature a little more than fusing point, melt and go a small amount of seed crystal can on clean seed crystal face, grow to guarantee crystal;
4. after realizing that seed crystal and melt fully are stained with profit, make the liquid level temperature be in fusing point, slowly upwards lift and rotate seed rod; Control pulling rate and rotating speed, seed crystal is grown up gradually;
5. regulate carefully heating power, make the liquid level temperature equal fusing point, realize the necking down of gem crystal growth and---expand shoulder---isodiametric growth---ending whole process.
In the process of above-mentioned kyropoulos growing sapphire crystal, often occur that a kind of situation is that seed crystal separates and comes off with seed chuck, causes crystal to grow unsuccessfully.Its reason is because traditional seed chuck and being connected of seed crystal are to adopt seed crystal and open reeded seed chuck to bundle closely, young brilliant chuck is opened three grooves usually, fluting adopts expensive tungsten-rhenium wire, because the making of tungsten-rhenium wire can't guarantee even completely, therefore always having certain probability causes separation to come off, for the growth of large kilogram crystal, the brilliant chuck of son that has three grooves is more insecure with being connected of young crystalline substance, more easily separate and come off, and the cost of a secondary growth failure is quite high.Although expensive tungsten-rhenium wire snappiness is better in addition, and is still on the low side with sapphire phase specific tenacity, if even cancel the use of tungsten-rhenium wire in seed crystal by the design minimizing of seed chuck, just can be cost-saving greatly.
Summary of the invention
The purpose of this utility model is for the deficiencies in the prior art, provide a kind of more reasonable structure, cost lower, with seed crystal, be connected more firmly kyropoulos sapphire crystal growth seed chuck.
The utility model is realized by following technical proposal:
the utility model seed chuck is on the basis of three layers of traditional groove seed chuck design, change the groove structure at middle part into boss groove structure, be the shallow grooves structure up and down, boss groove structure due to middle part, the longitudinal stress of seed crystal will be mainly to be born by the middle part circular groove that protrudes, and two shallow grooves in up and down only play the fixedly effect of seed crystal and seed chuck, only bear horizontal power, because seeded growth is longitudinally, laterally do not stress theoretically, seed crystal fixing only needs high temperature resistant but intensity does not need too high material to get final product so, such as molybdenum filament, no longer need expensive tungsten-rhenium wire.
The utlity model has following advantage:
The utility model is owing to having adopted the design of new seed chuck, and its middle part boss groove structure makes seed crystal bear most power in process of growth, no longer need working strength requirement height again expensive tungsten-rhenium wire fix seed crystal, thereby saved great amount of cost.After the more important thing is that low groove fluting is more shallow, seed crystal is frangibility not, and the tongue at middle part makes seed crystal can not break away from seed rod, has eliminated the problem that seed crystal comes off, thereby has improved the success ratio of crystal growth.
The accompanying drawing explanation
Fig. 1 is the utility model structural representation.
Embodiment
Below in conjunction with accompanying drawing, the utility model being done to one elaborates.
As shown in Figure 1, a kind of kyropoulos sapphire crystal growth seed chuck, it is characterized in that: on seed chuck, be provided with upper groove, middle tongue, low groove, because middle tongue is the boss groove, the boss groove is positioned in the middle of the seed chuck head, and from outer wall to intermediate projections, upper groove, low groove are more shallow, thereby maximum longitudinal stress is placed on seed crystal fully, and upper low groove only bears slight lateral stressed.
The utility model, through the experiment in 12 sapphire crystal growth cycles, the situation that seed crystal and seed chuck come off do not occur, and the crack conditions of seed crystal in binding place do not occur yet, thereby has improved the success ratio of crystal growth, has saved cost.
The utility model integral body is molybdenum system, and two shallow grooves adopt the molybdenum filament binding.
Claims (4)
1. a kyropoulos sapphire crystal growth seed chuck, is characterized in that: on seed chuck, be provided with upper groove, middle tongue and low groove.
2. kyropoulos sapphire crystal growth seed chuck according to claim 1, it is characterized in that: middle tongue is the boss groove, and the boss groove is positioned in the middle of the seed chuck head, from outer wall to intermediate projections.
3. kyropoulos sapphire crystal growth seed chuck according to claim 1 and 2, it is characterized in that: upper groove, low groove are shallow grooves.
4. kyropoulos sapphire crystal growth seed chuck according to claim 1 and 2 is characterized in that: wholely be molybdenum system, two shallow grooves adopt the molybdenum filaments binding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202075785U CN203295657U (en) | 2013-04-22 | 2013-04-22 | Seed crystal chuck for growth of sapphire crystal by kyropoulos method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202075785U CN203295657U (en) | 2013-04-22 | 2013-04-22 | Seed crystal chuck for growth of sapphire crystal by kyropoulos method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203295657U true CN203295657U (en) | 2013-11-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013202075785U Expired - Fee Related CN203295657U (en) | 2013-04-22 | 2013-04-22 | Seed crystal chuck for growth of sapphire crystal by kyropoulos method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203295657U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105648529A (en) * | 2016-01-25 | 2016-06-08 | 福建福晶科技股份有限公司 | Simple seed crystal reinforcing method |
-
2013
- 2013-04-22 CN CN2013202075785U patent/CN203295657U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105648529A (en) * | 2016-01-25 | 2016-06-08 | 福建福晶科技股份有限公司 | Simple seed crystal reinforcing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160517 Address after: 245000 No. 168 Yingbin Avenue, Kowloon low carbon economic zone, Tunxi District, Anhui, Huangshan City Patentee after: Huangshan Dongjing Photoelectric Technology Co., Ltd. Address before: 321016, No. 218, Huaxi Road, Qiu Xi Street, Jinhua, Zhejiang Patentee before: Zhejiang Orient Crystal Optics Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131120 Termination date: 20190422 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |