CN203284465U - PECVD stove with fluorine cleaning device - Google Patents
PECVD stove with fluorine cleaning device Download PDFInfo
- Publication number
- CN203284465U CN203284465U CN201320346180XU CN201320346180U CN203284465U CN 203284465 U CN203284465 U CN 203284465U CN 201320346180X U CN201320346180X U CN 201320346180XU CN 201320346180 U CN201320346180 U CN 201320346180U CN 203284465 U CN203284465 U CN 203284465U
- Authority
- CN
- China
- Prior art keywords
- gas
- pecvd
- stove
- flange
- pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 30
- 238000004140 cleaning Methods 0.000 title claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 18
- 239000011737 fluorine Substances 0.000 title claims abstract description 18
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000009826 distribution Methods 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 61
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000011148 porous material Substances 0.000 claims description 12
- 239000002912 waste gas Substances 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 5
- 229920000742 Cotton Polymers 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 3
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical group FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- -1 fluorine ions Chemical class 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 235000013312 flour Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Abstract
A PECVD stove with the fluorine cleaning device comprises a reactor, a chamber, a gas line system, a vacuum pipe, an RF power source and the fluorine cleaning device. The reactor comprises a gas distribution tank, a gas sieve plate arranged on the surface of the gas distribution tank, and a gas hole gap, a positive plate and a negative plate are arranged between every two gas holes. The chamber comprises a gas inlet flange, a gas outlet flange, an RF connecting flange and a heating pipe, the gas inlet flange is filled with process gas, the heating pipe is evenly distributed outside a cavity through pressing blocks, and the RF power source is connected with the reactor through the RF connecting flange. The gas line system comprises a combiner box arranged at the stove cavity side and the combiner box comprises six process gas pipes and an N2 pipe. The vacuum pipe comprises a dry pump, a molecular pump, a roots pump and a control valve. A 13.56 MHz power source generator is adopted by the RF power source and a matcher is installed on the lower portion of the cavity. The fluorine cleaning device is used for cleaning silicon in the PECVD stove through fluorine ions.
Description
Technical field
The utility model relates to a kind of PECVD stove, especially a kind of stove of PECVD with the fluorine cleaning plant.
Background technology
PECVD, full name are Plasma Enhanced Chemical Vapor Deposition, that is: plasma enhanced chemical vapor deposition method.PECVD makes the ionization of gas that contains the film composed atom by microwave or radio frequency etc., form plasma body in part, and the plasma chemistry activity is very strong, is easy to react, and deposits desired film on substrate., for chemical reaction can be carried out at lower temperature, utilized the activity of plasma body to promote reaction, thereby this CVD is called plasma enhanced chemical vapor deposition.
Can produce a large amount of silica flour and silicon film at cavity and the inside reactor of PECVD stove in the PECVD coating process.In prior art, generally adopt labor cleaning's method, there are some drawbacks in labor cleaning's method, as: can cause the pollution of environment in the process of cleaning, also silica flour and silicon film can't be removed fully simultaneously.
The utility model content
The purpose of this utility model is to provide a kind of PECVD stove, it is characterized in that installing additional a cover fluorine cleaning plant on the PECVD stove, adopt fluorion to clear up silica flour and silicon film, scale removal process is completed automatically, greatly saved the manpower work, and the silicon clearance is high, and can not produce environmental pollution.
Another purpose of the present utility model is to provide a kind of PECVD stove, it is characterized in that the fluorion producer produces fluorion under the effect of RF power supply, fluorion then with reactor in silica flour or the silicon fiml generation gas that reacts, then this gas is extracted and be delivered to waste gas pump out the equipment tail gas unit, after the equipment tail gas unit is processed, with this gaseous emission.
For reaching above purpose, the utility model provides a kind of stove of PECVD with the fluorine cleaning plant, comprising:
one reactor, comprise a gas distribution case, one gas sieve plate, be arranged at this gas distribution case surface, this gas sieve plate has a plurality of pores, be uniformly distributed on this gas sieve plate, each this pore has a hole diameter, has a pore spacing between this pore, one positive plate, an and negative plate, has a battery lead plate spacing between this positive plate and this negative plate, the corresponding gas distribution case of every sheet glass, enter glass surface after disperseing by the gas sieve plate again after gas enters in the gas distribution case by top, to improve the homogeneity of gas distribution, thereby improve the homogeneity of product,
One chamber, be used for deposition, comprise: an inlet flange, one flange of giving vent to anger, one RF joint flange and a heating tube, process gas are contained on this inlet flange, and reacted gas is discharged by this flange of giving vent to anger, this heating tube is evenly distributed on the cavity outside and uses the insulating cotton filling by briquetting, and the RF power supply is connected with reactor by this RF joint flange;
One air-channel system, comprise a header box, is arranged at oven cavity side, and this header box comprises six process gas Guan Heyi road, road N2 pipes;
One vacuum-lines, be used for the final vacuum of assurance equipment and the continuous closed-loop of deposition pressure and control, and comprises a dried pump, a part pump, a lobe pump, and a by-pass valve control;
One RF power supply, adopted the power source generator of 13-14MHz, and matching box is arranged on the cavity bottom,, to reduce the wiring distance, reduces the decay of radio frequency; And
One fluorine cleaning plant, the silicon for clearing up by fluorion in the PECVD stove comprises:
One argon gas unit, be used for controlling this inside reactor of argon purge because of the residual gas that pecvd process produces, make power field effect transistor have more vigor, help igniting, purge continuously argon gas and will help to prevent that the pecvd process gas backstreaming from staining product in pecvd process
One nitrogen trifluoride unit, be used for controlling nitrogen trifluoride the PECVD stove cleaned,
One waste gas pump, after being used for reacting, the equipment tail gas unit is extracted and be delivered to gained waste gas out, and
One equipment tail gas unit, be used for described waste gas is processed, and with this exhaust gas emission.
The utility model adopts fluorion to clear up silica flour and silicon film, and scale removal process is completed automatically, has greatly saved the manpower work, reduces costs; In addition, the silicon clearance is much higher than labor cleaning's method, and can not produce environmental pollution.
These purposes of the present utility model, characteristics, and the embodiment that advantage will be below, accompanying drawing, and detailed exposure in claim.
Description of drawings
Fig. 1 is the structural representation according to the inside reactor of a preferred embodiment of the present utility model.
Fig. 2 is the structural representation according to the PECVD stove of a preferred embodiment of the present utility model.
Embodiment
A kind of stove of PECVD with the fluorine cleaning plant comprises:
one reactor 5, comprise a gas distribution case 1, one gas sieve plate, be arranged at this gas distribution case surface, this gas sieve plate has a plurality of pores, be uniformly distributed on this gas sieve plate, each this pore has a hole diameter, has a pore spacing between this pore, one positive plate 2, an and negative plate 3, has a battery lead plate spacing between this positive plate 2 and this negative plate 3, the corresponding gas distribution case 1 of every sheet glass 4, gas is entered after gas distribution case 1 disperses by the gas sieve plate after interior again and is entered glass 4 surfaces by top, to improve the homogeneity of gas distribution, thereby improve the homogeneity of product,
Preferably, this battery lead plate spacing is 28-32mm;
One vacuum-lines 6, be used for the final vacuum of assurance equipment and the continuous closed-loop of deposition pressure and control, and comprises a dried pump, a part pump, a lobe pump, and a by-pass valve control;
One RF power supply 7, adopted the power source generator of 13.56MHz, and matching box is arranged on the cavity bottom,, to reduce the wiring distance, reduces the decay of radio frequency;
One chamber, be used for deposition, comprise: an inlet flange, one flange of giving vent to anger, one RF joint flange and a heating tube, process gas are contained on this inlet flange, and reacted gas is discharged by this flange of giving vent to anger, this heating tube is evenly distributed on the cavity outside and uses the insulating cotton filling by briquetting, and RF power supply 7 is connected with reactor 5 by this RF joint flange;
One air-channel system 8, comprise a header box, is arranged at oven cavity side, and this header box comprises six process gas Guan Heyi road, road N2 pipes;
Preferably, this air-channel system 8 further comprises a mass flow controller, be used for controlling flow, and two valves, the front and rear of installation and this mass flow controller, be used for guaranteeing the safe operation of described air-channel system 8; And
Preferably, whole pipe fittings and the valve of this air-channel system 8 are made by stainless steel;
One fluorine cleaning plant 9, the silicon for clearing up by fluorion in the PECVD stove comprises:
One argon gas unit, be used for controlling these reactor 5 inside of argon purge because of the residual gas that pecvd process produces, make power field effect transistor have more vigor, help igniting, purge continuously argon gas and will help to prevent that the pecvd process gas backstreaming from staining product in pecvd process
One nitrogen trifluoride unit, be used for controlling nitrogen trifluoride the PECVD stove cleaned,
One waste gas pump, after being used for reacting, the equipment tail gas unit is extracted and be delivered to gained waste gas out, and
One equipment tail gas unit, be used for described waste gas is processed, and with this gaseous emission.
Preferably, described waste gas pump adopts 3200 molecular pumps.From the pumping speed of performance molecular pump lower than diffusion pump, but therefore the over-all properties of molecular pump considers to adopt molecular pump higher than diffusion pump, and by changing the molecular pump that cavity configuration adopts two molecular pumps or seek large pumping speed again, improves pumping speed.
By above-described embodiment, the purpose of this utility model is by fully effective having reached.The personage who is familiar with this skill should be understood that the utility model includes but not limited to the content of describing in accompanying drawing and top embodiment.Any modification that does not depart from function and structure principle of the present utility model all will be included in the scope of claims.
Claims (5)
1. the stove of the PECVD with the fluorine cleaning plant, is characterized in that, comprising:
one reactor, comprise a gas distribution case, one gas sieve plate, be arranged at this gas distribution case surface, this gas sieve plate has a plurality of pores, be uniformly distributed on this gas sieve plate, each this pore has a hole diameter, has a pore spacing between this pore, one positive plate, an and negative plate, has a battery lead plate spacing between this positive plate and this negative plate, the corresponding gas distribution case of every sheet glass, enter glass surface after disperseing by the gas sieve plate again after gas enters in the gas distribution case by top, to improve the homogeneity of gas distribution, thereby improve the homogeneity of product,
One vacuum-lines, be used for the final vacuum of assurance equipment and the continuous closed-loop of deposition pressure and control, and comprises a dried pump, a part pump, a lobe pump, and a by-pass valve control;
One RF power supply, adopted the power source generator of 13-14MHz, and matching box is arranged on the cavity bottom,, to reduce the wiring distance, reduces the decay of radio frequency;
One chamber, be used for deposition, comprise: an inlet flange, one flange of giving vent to anger, one RF joint flange and a heating tube, process gas are contained on this inlet flange, and reacted gas is discharged by this flange of giving vent to anger, this heating tube is evenly distributed on the cavity outside and uses the insulating cotton filling by briquetting, and the RF power supply is connected with reactor by this RF joint flange;
One air-channel system, comprise a header box, is arranged at oven cavity side, and this header box comprises six process gas Guan Heyi road, road N2 pipes; And
One fluorine cleaning plant, the silicon for clearing up by fluorion in the PECVD stove comprises:
One argon gas unit, be used for controlling this inside reactor of argon purge because of the residual gas that pecvd process produces, and makes power field effect transistor have more vigor,
One nitrogen trifluoride unit, be used for controlling nitrogen trifluoride the PECVD stove cleaned,
One waste gas pump, after being used for reacting, the equipment tail gas unit is extracted and be delivered to gained waste gas out, and
One equipment tail gas unit, be used for described waste gas is processed, and with this gaseous emission.
2. the stove of the PECVD with the fluorine cleaning plant according to claim 1, is characterized in that, described waste gas pump adopts 3200 molecular pumps.
3. the stove of the PECVD with the fluorine cleaning plant according to claim 1, is characterized in that, this battery lead plate spacing is 28-32mm.
4. the stove of the PECVD with the fluorine cleaning plant according to claim 1, it is characterized in that, this air-channel system further comprises: a mass flow controller, be used for controlling flow, and two valves, the front and rear of installation and this mass flow controller, be used for guaranteeing the safe operation of described air-channel system.
5. the stove of the PECVD with the fluorine cleaning plant according to claim 1, is characterized in that, whole pipe fittings and the valve of this air-channel system are made by stainless steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320346180XU CN203284465U (en) | 2013-06-17 | 2013-06-17 | PECVD stove with fluorine cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320346180XU CN203284465U (en) | 2013-06-17 | 2013-06-17 | PECVD stove with fluorine cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203284465U true CN203284465U (en) | 2013-11-13 |
Family
ID=49540838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320346180XU Expired - Fee Related CN203284465U (en) | 2013-06-17 | 2013-06-17 | PECVD stove with fluorine cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203284465U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104233234A (en) * | 2013-06-17 | 2014-12-24 | 沙嫣 | PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace |
-
2013
- 2013-06-17 CN CN201320346180XU patent/CN203284465U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104233234A (en) * | 2013-06-17 | 2014-12-24 | 沙嫣 | PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102640255B (en) | For the method and apparatus that the emission gases of lining treatment system is processed | |
| CN100519835C (en) | Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell | |
| CN210206395U (en) | Oil gas tank oil gas processing apparatus based on liquid nitrogen condensation | |
| CN102652946A (en) | Plasma cleaning device and plasma cleaning method | |
| CN203284465U (en) | PECVD stove with fluorine cleaning device | |
| CN104401966A (en) | Continuous type production equipment and method of carbon nano tube | |
| CN203284461U (en) | Gas distribution vertical type PECVD furnace | |
| CN107837989A (en) | The vacuum of radiator for transformer inner chamber draws paint and vacuum quick drying paint equipment and technique | |
| CN203364503U (en) | System used for recovering steam and residual heat produced in tire vulcanization treating process | |
| CN207716895U (en) | A kind of waste heat recovery system of kiln | |
| CN204702527U (en) | A kind of phenol-containing wastewater treatment facility of gas station | |
| CN105289214A (en) | Ammonia gas and silane mixed exhaust gas comprehensive treatment device | |
| CN203333761U (en) | PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace with double-high vacuum pump system | |
| CN103007717B (en) | Organosilicone monomer tail gas absorption device and technology thereof | |
| CN104233234A (en) | PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace | |
| CN202430081U (en) | Phenol water disposal device in gas station | |
| CN213880372U (en) | Array type rectangular cavity microwave plasma generator | |
| CN110158057B (en) | PECVD process chamber branch pipeline device and gas circuit system thereof | |
| CN104141115B (en) | Vertical gas distribution type PECVD furnace and manufacturing method thereof | |
| CN103693793B (en) | Treatment method and treatment system of ammonia-containing wastewater in semi-coke production | |
| CN210001929U (en) | equipment for remotely cleaning PECVD chamber by plasma | |
| CN105001919A (en) | Coke tar removal condenser | |
| CN105274499A (en) | Single-room multi-electrode type PECVD (plasma enhanced chemical vapor deposition) reaction chamber | |
| CN216897259U (en) | Boiler steam recovery unit | |
| CN205235701U (en) | Processing apparatus is synthesized to mixed waste gas of ammonia and silane |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Nantong Johnson Photoelectric Technology Co., Ltd. Assignor: Sha Xiaolin|Sha Yan Contract record no.: 2014320000315 Denomination of utility model: PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace Granted publication date: 20131113 License type: Exclusive License Record date: 20140417 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161228 Address after: 226400 Rudong Jiangsu Economic Development Zone, Rudong, Jialing River Road on the north side Patentee after: Nantong Johnson Photoelectric Technology Co., Ltd. Address before: 200336 Shanghai International Trade Center, room 2201, No. 1801, West Yan'an Road Patentee before: Sha Yan Patentee before: Sha Xiaolin |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131113 Termination date: 20180617 |