CN203284465U - PECVD stove with fluorine cleaning device - Google Patents

PECVD stove with fluorine cleaning device Download PDF

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Publication number
CN203284465U
CN203284465U CN201320346180XU CN201320346180U CN203284465U CN 203284465 U CN203284465 U CN 203284465U CN 201320346180X U CN201320346180X U CN 201320346180XU CN 201320346180 U CN201320346180 U CN 201320346180U CN 203284465 U CN203284465 U CN 203284465U
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China
Prior art keywords
gas
pecvd
stove
flange
pump
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Expired - Fee Related
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CN201320346180XU
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Chinese (zh)
Inventor
沙嫣
沙晓林
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Nantong Johnson Photoelectric Technology Co Ltd
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Individual
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Priority to CN201320346180XU priority Critical patent/CN203284465U/en
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Publication of CN203284465U publication Critical patent/CN203284465U/en
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Abstract

A PECVD stove with the fluorine cleaning device comprises a reactor, a chamber, a gas line system, a vacuum pipe, an RF power source and the fluorine cleaning device. The reactor comprises a gas distribution tank, a gas sieve plate arranged on the surface of the gas distribution tank, and a gas hole gap, a positive plate and a negative plate are arranged between every two gas holes. The chamber comprises a gas inlet flange, a gas outlet flange, an RF connecting flange and a heating pipe, the gas inlet flange is filled with process gas, the heating pipe is evenly distributed outside a cavity through pressing blocks, and the RF power source is connected with the reactor through the RF connecting flange. The gas line system comprises a combiner box arranged at the stove cavity side and the combiner box comprises six process gas pipes and an N2 pipe. The vacuum pipe comprises a dry pump, a molecular pump, a roots pump and a control valve. A 13.56 MHz power source generator is adopted by the RF power source and a matcher is installed on the lower portion of the cavity. The fluorine cleaning device is used for cleaning silicon in the PECVD stove through fluorine ions.

Description

A kind of stove of PECVD with the fluorine cleaning plant
Technical field
The utility model relates to a kind of PECVD stove, especially a kind of stove of PECVD with the fluorine cleaning plant.
Background technology
PECVD, full name are Plasma Enhanced Chemical Vapor Deposition, that is: plasma enhanced chemical vapor deposition method.PECVD makes the ionization of gas that contains the film composed atom by microwave or radio frequency etc., form plasma body in part, and the plasma chemistry activity is very strong, is easy to react, and deposits desired film on substrate., for chemical reaction can be carried out at lower temperature, utilized the activity of plasma body to promote reaction, thereby this CVD is called plasma enhanced chemical vapor deposition.
Can produce a large amount of silica flour and silicon film at cavity and the inside reactor of PECVD stove in the PECVD coating process.In prior art, generally adopt labor cleaning's method, there are some drawbacks in labor cleaning's method, as: can cause the pollution of environment in the process of cleaning, also silica flour and silicon film can't be removed fully simultaneously.
The utility model content
The purpose of this utility model is to provide a kind of PECVD stove, it is characterized in that installing additional a cover fluorine cleaning plant on the PECVD stove, adopt fluorion to clear up silica flour and silicon film, scale removal process is completed automatically, greatly saved the manpower work, and the silicon clearance is high, and can not produce environmental pollution.
Another purpose of the present utility model is to provide a kind of PECVD stove, it is characterized in that the fluorion producer produces fluorion under the effect of RF power supply, fluorion then with reactor in silica flour or the silicon fiml generation gas that reacts, then this gas is extracted and be delivered to waste gas pump out the equipment tail gas unit, after the equipment tail gas unit is processed, with this gaseous emission.
For reaching above purpose, the utility model provides a kind of stove of PECVD with the fluorine cleaning plant, comprising:
one reactor, comprise a gas distribution case, one gas sieve plate, be arranged at this gas distribution case surface, this gas sieve plate has a plurality of pores, be uniformly distributed on this gas sieve plate, each this pore has a hole diameter, has a pore spacing between this pore, one positive plate, an and negative plate, has a battery lead plate spacing between this positive plate and this negative plate, the corresponding gas distribution case of every sheet glass, enter glass surface after disperseing by the gas sieve plate again after gas enters in the gas distribution case by top, to improve the homogeneity of gas distribution, thereby improve the homogeneity of product,
One chamber, be used for deposition, comprise: an inlet flange, one flange of giving vent to anger, one RF joint flange and a heating tube, process gas are contained on this inlet flange, and reacted gas is discharged by this flange of giving vent to anger, this heating tube is evenly distributed on the cavity outside and uses the insulating cotton filling by briquetting, and the RF power supply is connected with reactor by this RF joint flange;
One air-channel system, comprise a header box, is arranged at oven cavity side, and this header box comprises six process gas Guan Heyi road, road N2 pipes;
One vacuum-lines, be used for the final vacuum of assurance equipment and the continuous closed-loop of deposition pressure and control, and comprises a dried pump, a part pump, a lobe pump, and a by-pass valve control;
One RF power supply, adopted the power source generator of 13-14MHz, and matching box is arranged on the cavity bottom,, to reduce the wiring distance, reduces the decay of radio frequency; And
One fluorine cleaning plant, the silicon for clearing up by fluorion in the PECVD stove comprises:
One argon gas unit, be used for controlling this inside reactor of argon purge because of the residual gas that pecvd process produces, make power field effect transistor have more vigor, help igniting, purge continuously argon gas and will help to prevent that the pecvd process gas backstreaming from staining product in pecvd process
One nitrogen trifluoride unit, be used for controlling nitrogen trifluoride the PECVD stove cleaned,
One waste gas pump, after being used for reacting, the equipment tail gas unit is extracted and be delivered to gained waste gas out, and
One equipment tail gas unit, be used for described waste gas is processed, and with this exhaust gas emission.
The utility model adopts fluorion to clear up silica flour and silicon film, and scale removal process is completed automatically, has greatly saved the manpower work, reduces costs; In addition, the silicon clearance is much higher than labor cleaning's method, and can not produce environmental pollution.
These purposes of the present utility model, characteristics, and the embodiment that advantage will be below, accompanying drawing, and detailed exposure in claim.
Description of drawings
Fig. 1 is the structural representation according to the inside reactor of a preferred embodiment of the present utility model.
Fig. 2 is the structural representation according to the PECVD stove of a preferred embodiment of the present utility model.
Embodiment
A kind of stove of PECVD with the fluorine cleaning plant comprises:
one reactor 5, comprise a gas distribution case 1, one gas sieve plate, be arranged at this gas distribution case surface, this gas sieve plate has a plurality of pores, be uniformly distributed on this gas sieve plate, each this pore has a hole diameter, has a pore spacing between this pore, one positive plate 2, an and negative plate 3, has a battery lead plate spacing between this positive plate 2 and this negative plate 3, the corresponding gas distribution case 1 of every sheet glass 4, gas is entered after gas distribution case 1 disperses by the gas sieve plate after interior again and is entered glass 4 surfaces by top, to improve the homogeneity of gas distribution, thereby improve the homogeneity of product,
Preferably, this battery lead plate spacing is 28-32mm;
One vacuum-lines 6, be used for the final vacuum of assurance equipment and the continuous closed-loop of deposition pressure and control, and comprises a dried pump, a part pump, a lobe pump, and a by-pass valve control;
One RF power supply 7, adopted the power source generator of 13.56MHz, and matching box is arranged on the cavity bottom,, to reduce the wiring distance, reduces the decay of radio frequency;
One chamber, be used for deposition, comprise: an inlet flange, one flange of giving vent to anger, one RF joint flange and a heating tube, process gas are contained on this inlet flange, and reacted gas is discharged by this flange of giving vent to anger, this heating tube is evenly distributed on the cavity outside and uses the insulating cotton filling by briquetting, and RF power supply 7 is connected with reactor 5 by this RF joint flange;
One air-channel system 8, comprise a header box, is arranged at oven cavity side, and this header box comprises six process gas Guan Heyi road, road N2 pipes;
Preferably, this air-channel system 8 further comprises a mass flow controller, be used for controlling flow, and two valves, the front and rear of installation and this mass flow controller, be used for guaranteeing the safe operation of described air-channel system 8; And
Preferably, whole pipe fittings and the valve of this air-channel system 8 are made by stainless steel;
One fluorine cleaning plant 9, the silicon for clearing up by fluorion in the PECVD stove comprises:
One argon gas unit, be used for controlling these reactor 5 inside of argon purge because of the residual gas that pecvd process produces, make power field effect transistor have more vigor, help igniting, purge continuously argon gas and will help to prevent that the pecvd process gas backstreaming from staining product in pecvd process
One nitrogen trifluoride unit, be used for controlling nitrogen trifluoride the PECVD stove cleaned,
One waste gas pump, after being used for reacting, the equipment tail gas unit is extracted and be delivered to gained waste gas out, and
One equipment tail gas unit, be used for described waste gas is processed, and with this gaseous emission.
Preferably, described waste gas pump adopts 3200 molecular pumps.From the pumping speed of performance molecular pump lower than diffusion pump, but therefore the over-all properties of molecular pump considers to adopt molecular pump higher than diffusion pump, and by changing the molecular pump that cavity configuration adopts two molecular pumps or seek large pumping speed again, improves pumping speed.
By above-described embodiment, the purpose of this utility model is by fully effective having reached.The personage who is familiar with this skill should be understood that the utility model includes but not limited to the content of describing in accompanying drawing and top embodiment.Any modification that does not depart from function and structure principle of the present utility model all will be included in the scope of claims.

Claims (5)

1. the stove of the PECVD with the fluorine cleaning plant, is characterized in that, comprising:
one reactor, comprise a gas distribution case, one gas sieve plate, be arranged at this gas distribution case surface, this gas sieve plate has a plurality of pores, be uniformly distributed on this gas sieve plate, each this pore has a hole diameter, has a pore spacing between this pore, one positive plate, an and negative plate, has a battery lead plate spacing between this positive plate and this negative plate, the corresponding gas distribution case of every sheet glass, enter glass surface after disperseing by the gas sieve plate again after gas enters in the gas distribution case by top, to improve the homogeneity of gas distribution, thereby improve the homogeneity of product,
One vacuum-lines, be used for the final vacuum of assurance equipment and the continuous closed-loop of deposition pressure and control, and comprises a dried pump, a part pump, a lobe pump, and a by-pass valve control;
One RF power supply, adopted the power source generator of 13-14MHz, and matching box is arranged on the cavity bottom,, to reduce the wiring distance, reduces the decay of radio frequency;
One chamber, be used for deposition, comprise: an inlet flange, one flange of giving vent to anger, one RF joint flange and a heating tube, process gas are contained on this inlet flange, and reacted gas is discharged by this flange of giving vent to anger, this heating tube is evenly distributed on the cavity outside and uses the insulating cotton filling by briquetting, and the RF power supply is connected with reactor by this RF joint flange;
One air-channel system, comprise a header box, is arranged at oven cavity side, and this header box comprises six process gas Guan Heyi road, road N2 pipes; And
One fluorine cleaning plant, the silicon for clearing up by fluorion in the PECVD stove comprises:
One argon gas unit, be used for controlling this inside reactor of argon purge because of the residual gas that pecvd process produces, and makes power field effect transistor have more vigor,
One nitrogen trifluoride unit, be used for controlling nitrogen trifluoride the PECVD stove cleaned,
One waste gas pump, after being used for reacting, the equipment tail gas unit is extracted and be delivered to gained waste gas out, and
One equipment tail gas unit, be used for described waste gas is processed, and with this gaseous emission.
2. the stove of the PECVD with the fluorine cleaning plant according to claim 1, is characterized in that, described waste gas pump adopts 3200 molecular pumps.
3. the stove of the PECVD with the fluorine cleaning plant according to claim 1, is characterized in that, this battery lead plate spacing is 28-32mm.
4. the stove of the PECVD with the fluorine cleaning plant according to claim 1, it is characterized in that, this air-channel system further comprises: a mass flow controller, be used for controlling flow, and two valves, the front and rear of installation and this mass flow controller, be used for guaranteeing the safe operation of described air-channel system.
5. the stove of the PECVD with the fluorine cleaning plant according to claim 1, is characterized in that, whole pipe fittings and the valve of this air-channel system are made by stainless steel.
CN201320346180XU 2013-06-17 2013-06-17 PECVD stove with fluorine cleaning device Expired - Fee Related CN203284465U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320346180XU CN203284465U (en) 2013-06-17 2013-06-17 PECVD stove with fluorine cleaning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320346180XU CN203284465U (en) 2013-06-17 2013-06-17 PECVD stove with fluorine cleaning device

Publications (1)

Publication Number Publication Date
CN203284465U true CN203284465U (en) 2013-11-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104233234A (en) * 2013-06-17 2014-12-24 沙嫣 PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104233234A (en) * 2013-06-17 2014-12-24 沙嫣 PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: Nantong Johnson Photoelectric Technology Co., Ltd.

Assignor: Sha Xiaolin|Sha Yan

Contract record no.: 2014320000315

Denomination of utility model: PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace

Granted publication date: 20131113

License type: Exclusive License

Record date: 20140417

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20161228

Address after: 226400 Rudong Jiangsu Economic Development Zone, Rudong, Jialing River Road on the north side

Patentee after: Nantong Johnson Photoelectric Technology Co., Ltd.

Address before: 200336 Shanghai International Trade Center, room 2201, No. 1801, West Yan'an Road

Patentee before: Sha Yan

Patentee before: Sha Xiaolin

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131113

Termination date: 20180617