CN203275572U - A detecting apparatus for detecting the overvoltage of doubly-fed frequency converter IGBTs and anti-parallel diodes thereof - Google Patents
A detecting apparatus for detecting the overvoltage of doubly-fed frequency converter IGBTs and anti-parallel diodes thereof Download PDFInfo
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- CN203275572U CN203275572U CN 201320246859 CN201320246859U CN203275572U CN 203275572 U CN203275572 U CN 203275572U CN 201320246859 CN201320246859 CN 201320246859 CN 201320246859 U CN201320246859 U CN 201320246859U CN 203275572 U CN203275572 U CN 203275572U
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Abstract
The utility model discloses a detecting apparatus for detecting the overvoltage of doubly-fed frequency converter IGBTs and anti-parallel diodes thereof and belongs to electronic control field. The detecting apparatus mainly comprises a fiber transceiver, a microcontroller (MCU), a control trigger device, and a three-bit eight-segment nixie tube equipped with a control panel. Because of the selection of absorption capacitors in the design of the doubly-fed frequency converter IGBT module and the influence of a line distribution parameter, an IGBT device bears voltage close to or even higher than the maximum withstand voltage value thereof when turned off, bringing a hidden danger to the normal operation of a power module. Single pulse or double pulse can be set to trigger IGBTs on bridge arms. Whether the voltage of the doubly-fed frequency converter IGBT devices satisfy a requirement of devices for safe operation can be fast determined by observing the overvoltage at the time when the doubly-fed frequency converter IGBT devices are turned off. Therefore, the reliability of a formed product is guaranteed. The detecting apparatus has characteristics of adjustable pulse time and interval, simple structure, and convenient use, and is easy to replace an apparatus using a conventional testing method.
Description
Technical field
A kind of double-fed frequency converter IGBT and its anti-paralleled diode turn-off the superpotential pick-up unit, belong to the power electronics control field.
Background technology
Along with the develop rapidly of power electronics and semiconductor technology, the powerful IGBT power model of high density becomes main flow gradually in double-fed frequency converter, rectifier and motion control field.The continuous expansion of IGBT capacity has brought the constantly soaring of its cost, and for this reason, in order to reduce the cost of enterprise, the reliability service that solves power model just becomes the primary problem that faces in industry.And double-fed frequency converter IGBT module over-voltage breakdown when turn-offing to cause losing efficacy be that module can't normally be moved the most common phenomenon.
In the prior art, turn-offing overvoltage constantly in order to reduce as much as possible double-fed frequency converter IGBT and its anti-paralleled diode, during design, the positive and negative busbar of strict control is to the distance of IGBT module, and guarantee that the contact between copper bar and module has good electric conductivity, to reduce the stray inductance between the loop.To the Absorption Capacitance in parallel with IGBT, require its appearance value size necessary reasonable in design, the appearance value is too large, and the Absorption Capacitance volume also can increase, and takies too many space, is not easy to the design of module, and appearance is worth the dynamic perfromance that too conference affects IGBT.And the appearance value is too little, and double-fed frequency converter IGBT and the diode superpotential when turn-offing in parallel with it will be too high, can directly cause this IGBT module to lose efficacy because of over-voltage breakdown in the time of serious.for this reason, the designer usually needs module bus bar is designed, after Absorption Capacitance also installs, it is combined into a cover double-fed frequency converter three phase power modular unit, ac output end is linked on reactor as its load, produce pwm control signal by software and drive the three phase power module, with the shutoff voltage signal on oscillograph observation IGBT, if turn-offing superpotential too very much not meets the demands, the copper bar that need to again change Absorption Capacitance or design, again and again, until the shutoff superpotential on double-fed frequency converter IGBT device is within its withstand voltage safe range.
The band of double-fed frequency converter three phase power module carries test, must be arranged on a fixing support, for safety, in module combinations, double-fed frequency converter IGBT and coupled Absorption Capacitance usually are designed in the inside of shell, are not easy the place that allows the people touch.Therefore there is following hidden danger: 1. the replacing Absorption Capacitance that so repeats, bring very large workload for debugging, designer, and may damage the insulation course of IGBT positive and negative busbar when removing and installing.2. if Absorption Capacitance selection for the first time is very unreasonable, ripple of software PWM just might puncture because shutoff voltage is too high the IGBT device.3. if the validity of the IGBT module hardware overcurrent protection function of calibration tape IPM need to be increased to the output current of module the hardware over-current protection point, this operation has very large danger.So whether this scheme is not easy to investigate the double-fed frequency converter IGBT module hardware overcurrent protection function of integrated drive plate reliable.Thereby a kind of reasonable method of testing easily just becomes the expectation of the numerous module designer of industry.
Summary of the invention
In order to overcome the problem that exists in above-mentioned existing double-fed frequency converter IGBT and its anti-paralleled diode superpotential testing process.
The technical solution adopted in the utility model is: a kind of double-fed frequency converter IGBT and its anti-paralleled diode turn-off the superpotential pick-up unit, mainly comprise fiber optical transceiver, microcontroller, gating pulse flip flop equipment, with 38 segment numeral pipes of control panel; Described fiber optical transceiver comprises that also one tunnel fiber optic emitter, a tunnel that triggers pipe IGBT on brachium pontis triggers fiber optic emitter and one road IGBT fault fiber optic receiver of pipe IGBT under brachium pontis, described gating pulse flip flop equipment comprises Two-pulse triggering device, monopulse flip flop equipment, single tube drives and triggers and two-tube driving triggering, and described 38 segment numeral pipes with control panel are set to trigger and controlled parameter.
Described fiber optical transceiver is Aglient HFBR-0400 series, and its maximum transmission range can reach 2.7km.The PWM fault interrupting pin of described microcontroller (MCU) directly is connected with the fault-signal of IGBT.
This device is set by control panel and is triggered type, burst length and interval time.These data directly are written in the Flash of microcontroller (MCU), and avoiding powering on after power down also needs to reset again.Being set by the triggering selection device is that upper pipe triggers or lower pipe triggers or pipe triggers simultaneously up and down, realizes dipulse test or monopulse test by pulse triggering means.
Method of testing of the present utility model is: only single-phase brachium pontis is carried out the triggering test of dipulse, only needing that namely a brachium pontis is installed gets final product, if the upper pipe of test, need to be the ac output end of this brachium pontis and negative busbar short circuit, in setting, the pipe trigger mode, drive upper pipe IGBT gate pole dipulse, obtain the shutoff superpotential of pipe IGBT, simultaneously, by measuring the voltage waveform at lower pipe two ends, can obtain the shutoff superpotential of lower pipe IGBT parallel diode.If need to measure lower pipe, only need ac output end and positive busbar short circuit with this brachium pontis, the triggering selection device is transferred to lower pipe trigger mode and is got final product.
Described dipulse drives, need to according to test condition at first set trigger pulse time width and interval time width, after powering on, microcontroller (MCU) reads the last time experiment setting value after complete automatically, if first experiment, the time width of above-mentioned pulse and interval time width be the 1us of acquiescence.Should increase gradually during experiment pulse time width and interval time width turn-off because of over current fault to prevent IGBT.
For preventing the too high IGBT of the puncturing device of shutoff voltage, when testing, needing to set the single triggering pulsewidth time is default value, increase gradually triggered time of pulsewidth and Real Time Observation double-fed frequency converter IGBT and turn-off over-voltage waveform, the unreasonable IGBT of causing that real-time eliminating is selected because of Absorption Capacitance causes situation about losing efficacy because shutoff voltage is too high.Single pulse triggers and important difference of Two-pulse triggering is to utilize Two-pulse triggering can detect on same brachium pontis, whether the shutoff superpotential of another and IGBT parallel diode meets the demands.
If the validity of the IGBT module hardware overcurrent protection function of calibration tape IPM utilizes single pulse to trigger, increase gradually the width of driving pulse, observe the electric current of IGBT and the time of IGBT conducting flow through.Under normal circumstances, after flowing through the IGBT electric current and surpassing module hardware and cross flow point, IPM can give the over current fault signal microcontroller (MCU), after microcontroller receives fault, blocks PWM and triggers, and failure code is presented on the charactron of 38 sections.At this moment, by observing the electric current of IGBT, whether the hardware that can conclude double-fed frequency converter IGBT module is crossed flow point and is met the demands.Described single pulse triggers, and is to increase gradually the driving pulse width in experiment, reaches hardware and crosses flow point and do not have fault to show when observing the electric current that flows through double-fed frequency converter IGBT, can think the hardware overcurrent protection point failure of this test module.
Good effect of the present utility model is: trigger by the IGBT that sets on single pulse or each brachium pontis of dual-pulse; observe double-fed frequency converter IGBT device shutoff superpotential constantly and can judge rapidly whether its voltage swing satisfies the requirement of device trouble free service; simultaneously, can check as required with IPM over-current hardware protection characteristic.Thereby guaranteed the reliability after the formed product.And the burst length and the interval adjustable, simple in structure and easy to use, be convenient to substitute existing method of testing.Do not need three-phase module all to change when particularly changing, greatly reduced test, designer's workload.
Description of drawings
Fig. 1 is the principle of work block diagram of the utility model device.
Fig. 2 is circuit diagram of the present utility model.
Embodiment
In Fig. 1, the input section of fiber optical transceiver 2 is interrupted PTD0 with PWM1, the PWM2 of microcontroller 1 and PWM and is connected; Be connected with PTC with the SPI port of microcontroller 1 with 38 segment numeral pipes 3 of control panel and be connected; To set pulse width; Control flip flop equipment 4 and be connected with the PTC digital port of microcontroller, set and trigger type.
Fig. 2 is circuit diagram of the present utility model.The resistance R 28 that is connected with fiber optic emitter U1, R32, R19, R20 and triode Q1 have consisted of the driving circuit of fiber optic emitter U1 jointly, the resistance R 29 that is connected with fiber optic emitter U2, R33, R18, R21 and triode Q2 have consisted of the driving circuit of fiber optic emitter U2 jointly; The lower end that resistance R 20 is connected with resistance R connects respectively PWM1 pin and the PWM2 pin of microcontroller U15, as the gate electrode drive signals of module brachium pontis up and down IGBT; 6 pin of fiber optic receiver U5 are connected with the fault interrupting pin PTD0 of the PWM of microcontroller U15, and the fault-signal of IGBT is passed to microcontroller U15 by fiber optic receiver U5, and the resistance R 2 that is connected with fiber optic receiver U56 pin equally act as current limliting; 38 segment numeral pipes 3 with control panel are comprised of digital pipe driving chip US1, charactron DS1 and three buttons, the data bus SEG0-SEG7 of digital pipe driving chip US1 is connected with charactron DS1, and digital pipe driving chip US1 is connected with microcontroller U15 by spi bus, the capacitor C 3, C4, the C5 that are connected with digital pipe driving chip US1 have consisted of electric source filter circuit, and the resistance R 4-R12 that is connected with digital pipe driving chip US1 is as the bus driver resistance of digital pipe driving chip US1; The charactron DS1 of 38 sections is used for the hardware fault code of result and IGBT module of display parameter setting; Control S1, S2 in flip flop equipment 4 and S3 button pin respectively with PTC5, PTC4 and the PTC3 of microcontroller, the PTC2 digital port is connected, and realizes triggering the switching of type and trigger mode, resistance R 1 and diode D1 in Fig. 2, D2, D3 and D4 draw for button S1, S2 and S3 provide on level; Capacitor C 1, C12, C13 is as power filtering capacitor.
Claims (3)
1. a double-fed frequency converter IGBT and its anti-paralleled diode turn-off the superpotential pick-up unit, mainly comprise fiber optical transceiver, microcontroller, gating pulse flip flop equipment, with 38 segment numeral pipes of control panel; It is characterized in that: described fiber optical transceiver comprises that also one tunnel fiber optic emitter, a tunnel that triggers pipe IGBT on brachium pontis triggers fiber optic emitter and one road IGBT fault fiber optic receiver of pipe IGBT under brachium pontis, described gating pulse flip flop equipment comprises Two-pulse triggering device, monopulse flip flop equipment, single tube drives and triggers and two-tube driving triggering, and described 38 segment numeral pipes with control panel are set to trigger and controlled parameter.
2. a kind of double-fed frequency converter IGBT according to claim 1 and its anti-paralleled diode turn-off the superpotential pick-up unit, it is characterized in that: described fiber optical transceiver is Aglient HFBR-0400 series.
3. a kind of double-fed frequency converter IGBT according to claim 1 and its anti-paralleled diode turn-off the superpotential pick-up unit, and it is characterized in that: the PWM fault interrupting pin of described microcontroller directly is connected with the fault-signal of IGBT.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320246859 CN203275572U (en) | 2013-05-09 | 2013-05-09 | A detecting apparatus for detecting the overvoltage of doubly-fed frequency converter IGBTs and anti-parallel diodes thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320246859 CN203275572U (en) | 2013-05-09 | 2013-05-09 | A detecting apparatus for detecting the overvoltage of doubly-fed frequency converter IGBTs and anti-parallel diodes thereof |
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| CN203275572U true CN203275572U (en) | 2013-11-06 |
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| CN 201320246859 Expired - Fee Related CN203275572U (en) | 2013-05-09 | 2013-05-09 | A detecting apparatus for detecting the overvoltage of doubly-fed frequency converter IGBTs and anti-parallel diodes thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106033097A (en) * | 2015-03-20 | 2016-10-19 | 佛山市顺德区美的电热电器制造有限公司 | IGBT overcurrent protection method and device and household appliance |
| CN112285516A (en) * | 2020-09-28 | 2021-01-29 | 杭州沃镭智能科技股份有限公司 | IGBT power semiconductor test equipment |
-
2013
- 2013-05-09 CN CN 201320246859 patent/CN203275572U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106033097A (en) * | 2015-03-20 | 2016-10-19 | 佛山市顺德区美的电热电器制造有限公司 | IGBT overcurrent protection method and device and household appliance |
| CN106033097B (en) * | 2015-03-20 | 2020-06-05 | 佛山市顺德区美的电热电器制造有限公司 | IGBT (insulated Gate Bipolar transistor) overcurrent protection method and device and household appliance |
| CN112285516A (en) * | 2020-09-28 | 2021-01-29 | 杭州沃镭智能科技股份有限公司 | IGBT power semiconductor test equipment |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131106 Termination date: 20190509 |
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| CF01 | Termination of patent right due to non-payment of annual fee |