CN205539356U - Big power semiconductor switching element testing arrangement - Google Patents
Big power semiconductor switching element testing arrangement Download PDFInfo
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- CN205539356U CN205539356U CN201521141441.XU CN201521141441U CN205539356U CN 205539356 U CN205539356 U CN 205539356U CN 201521141441 U CN201521141441 U CN 201521141441U CN 205539356 U CN205539356 U CN 205539356U
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Abstract
The utility model discloses a big power semiconductor switching element testing arrangement, including control panel, main circuit, IGBT drive, IGBT generating line, man -machine interface, test fixture, the female row of main stromatolite, measured device, oscilloscope, oscilloscope isolation voltage probe and oscilloscope current probe. The main circuit includes voltage sensor, high voltage dc source, circuit breaker, direct current support electric capacity, equalizing resistance, discharge resistance, IGBT_C, hollow reactor, freewheeling diode, IGBT_A, IGBT_B, current sensor, main integrated circuit is in in the female row of main stromatolite, main stromatolite is female to be arranged including general power device interface, and the power devices of difference encapsulation link to each other through female row of adaptation and female the arranging of main stromatolite that corresponds. The utility model discloses can test the power device of various encapsulation, provide important numerical value foundation for the lectotype of semiconductor switch device, drive design, consumption estimation etc..
Description
Technical field
This utility model relates to field of semiconductor device test, particularly relates to a kind of high-power semiconductor switch device testing apparatus.
Background technology
Progress along with technology, high-voltage large-capacity power electronic equipment is widely applied in transmission and distribution networks, the core devices constituting these equipment is that various semiconductor switch device is (such as IGBT, GTO etc.), increase along with power grade, whether core devices can run most important to the safety and stability of whole system in safety operation area, therefore the test of early stage and assess extremely important.Current method of testing is substantially and belongs to the test of simple dipulse, this kind testing scheme existence operation is complicated, replacing measured device is loaded down with trivial details, cannot accomplish to carry out the problems such as test under unified parameters, so cannot be estimated device current-sharing effect time used in parallel to different packagings.
Utility model content
The purpose of this utility model is to provide the test device of a kind of semiconductor power switch device based on multiple-pulse electric current, can to multiple packaging and packaging of the same race used in parallel in the case of test, conveniently and efficiently switching loss, driving multiple important parameter such as power, on-state loss can be tested, provide foundation for design of drive circuit, power consumption calculation etc..
In order to achieve the above object, the technical solution of the utility model is: a kind of high-power semiconductor switch device testing apparatus, including: panel, main circuit, IGBT driving, IGBT bus, human-computer interaction interface, test fixture, main stack bus bar, measured device；Described panel is connected with human-computer interaction interface, IGBT driving, IGBT bus, main circuit respectively；Described main circuit is integrated in described main stack bus bar；Described main stack bus bar includes the general-purpose interface connecting semiconductor power switch device, and the device for power switching of various encapsulation is connected with main stack bus bar by corresponding adaptive busbar；Described test fixture drives with IGBT respectively, IGBT bus is connected.
Preferably, described high-power semiconductor switch device testing apparatus also includes: oscillograph, oscillograph isolation voltage probe and oscilloscope current probe；Described oscillograph is connected with oscillograph isolation voltage probe and oscilloscope current probe respectively；Described oscillograph isolation voltage probe and oscilloscope current probe are connected with main circuit respectively.
Preferably, described main circuit includes: voltage sensor, high-voltage DC power supply, chopper, DC support electric capacity, equalizing resistance, discharge resistance, insulated gate bipolar transistor IGBT _ C, air-core reactor, fly-wheel diode, insulated gate bipolar transistor IGBT _ A, insulated gate bipolar transistor IGBT _ B, current sensor；Described main stack bus bar is connected with DC support electric capacity, equalizing resistance, air-core reactor, insulated gate bipolar transistor IGBT _ A, insulated gate bipolar transistor IGBT _ B, fly-wheel diode respectively；Described high-voltage DC power supply is connected by chopper and main stack bus bar；Described insulated gate bipolar transistor IGBT _ C is connected by discharge resistance and main stack bus bar；Described voltage sensor and high-voltage DC power supply are in parallel；Described panel is connected with current sensor and voltage sensor respectively.
Preferably, described main stack bus bar also includes the junction point of air-core reactor, and the general-purpose interface connecting through described main stack bus bar between it and measured device realizes, and during test, described air-core reactor is replaceable.
Preferably, described panel and IGBT are driven through cable or optical fiber connects.
Preferably, described panel and human-computer interaction interface are connected by RS485 bus；Described panel also includes RS232 interface, is connected with host computer by cable.
It is further preferred that described human-computer interaction interface is touch control screen.
It is further preferred that remaining device includes that measured device is all enclosed in described test device in addition to described touch control screen.
Preferably, described measured device includes: insulated gate bipolar transistor IGBT, diode, controllable silicon, integrated gate commutated thyristor IGCT, metal-oxide half field effect transistor MOSFET.
It is further preferred that described measured device also includes that multiple packaging of the same race is in parallel.
The beneficial effects of the utility model:
High-power semiconductor switch device testing apparatus of the present utility model connects the general-purpose interface of semiconductor power switch device at main stack bus bar by arranging, the device for power switching of various encapsulation can be connected with main stack bus bar, can to multiple packaging and packaging of the same race used in parallel in the case of test, very easily the running parameter of semiconductor switch device can be tested in the design phase of system, can be that the design of drive circuit, heat dissipation design provide authentic and valid reference data.
An optimal technical scheme of the present utility model, panel and IGBT be driven through cable or optical fiber and connect, and the measured devices of different encapsulation all have a driving of the plug and play of correspondence, easy for installation, change quick.
Another optimal technical scheme of the present utility model, in whole test process, in addition to touch control screen, remaining device includes that measured device is all enclosed in this test device, and all tests all complete on touch control screen, simple to operate.
Accompanying drawing explanation
Fig. 1 is this utility model entire block diagram.
Fig. 2 is the main circuit schematic diagram of this utility model high-power semiconductor switch device detection assembling device.
Fig. 3 is this utility model overall appearance figure.
Wherein, 1-oscillograph；2-current sensor；3-oscilloscope current is popped one's head in；4-insulated gate bipolar transistor IGBT _ A；5-insulated gate bipolar transistor IGBT _ B；6-air-core reactor；7-fly-wheel diode；8-discharge resistance；9-DC support electric capacity；10-chopper；11-high-voltage DC power supply；12-insulated gate bipolar transistor IGBT _ C；13-voltage sensor；14-panel；15-RS232 interface；16-touch control screen；17-optical fiber；18-measured device；19-oscillograph isolation voltage is popped one's head in；20-IGBT drives；21-equalizing resistance.
Detailed description of the invention
Below in conjunction with detailed description of the invention and compare accompanying drawing this utility model is described in further detail.It is emphasized that it is that the description below is merely exemplary rather than in order to limit the scope of the present invention and application thereof.
As it is shown in figure 1, a kind of high-power semiconductor switch device detection assembling device, including: panel 14, main circuit, IGBT driving 20, IGBT bus, human-computer interaction interface, test fixture, main stack bus bar, measured device 18；Described panel 14 is connected with human-computer interaction interface, IGBT driving 20, IGBT bus, main circuit respectively；Described main circuit is integrated in described main stack bus bar；Described main stack bus bar includes a general-purpose interface connecting semiconductor power switch device, and the device for power switching of various encapsulation is connected with main stack bus bar by corresponding adaptive busbar；Described test fixture is connected with IGBT driving 20, IGBT bus respectively.
As in figure 2 it is shown, described high-power semiconductor switch device detection assembling device, also include: oscillograph 1, oscillograph isolation voltage probe 19 and oscilloscope current probe 3；Described oscillograph 1 is connected 3 connections with oscillograph isolation voltage probe 19 and oscilloscope current probe respectively；Described oscillograph isolation voltage probe 19 and oscilloscope current probe 3 are connected with main circuit respectively.Described main circuit includes: voltage sensor 13, high-voltage DC power supply 11, chopper 10, DC support electric capacity 9, equalizing resistance 21, discharge resistance 8, IGBT_C12, air-core reactor 6, fly-wheel diode 7, insulated gate bipolar transistor IGBT _ A4, insulated gate bipolar transistor IGBT _ B5, current sensor 2；Described main stack bus bar is connected with DC support electric capacity 9, equalizing resistance 21, air-core reactor 6, insulated gate bipolar transistor IGBT _ A4, insulated gate bipolar transistor IGBT _ B5, fly-wheel diode 7 respectively；Described high-voltage DC power supply 11 is connected by chopper 10 and main stack bus bar；Described insulated gate bipolar transistor IGBT _ C12 is connected by discharge resistance 8 and main stack bus bar；Described voltage sensor 13 and high-voltage DC power supply 11 are in parallel；Described panel 14 is connected with current sensor 2 and voltage sensor 13 respectively.Within i.e. main circuit is integrated in main stack bus bar, this kind of connected mode is safe and reliable and parasitic parameter (mainly stray inductance) is down to minimum.
Main stack bus bar also includes the junction point of air-core reactor 6, and the general-purpose interface connecting through described main stack bus bar between it and measured device 18 realizes, and during test, described air-core reactor 6 is replaceable.
The DC voltage that DC support electric capacity 9 is required when steady testing；Voltage on Support Capacitor is down to safe voltage after test by insulated gate bipolar transistor IGBT _ C 12 and discharge resistance 8；Air-core reactor 6 is as load during test, for producing required electric current；Fly-wheel diode 7 provides a continuous current circuit for air-core reactor 6 after all devices are closed when test, prevents air reactor 6 from damaging other device because current break produces too high voltage；Electric current when insulated gate bipolar transistor IGBT _ A 4 is for limiting test, it is to avoid because maloperation causes measured device to damage because electric current is excessive；Insulated gate bipolar transistor IGBT _ B 5 and measured device 18 are parallel relationship, on the one hand can bypass the portion of electrical current of measured device, play the effect of protection measured device；On the other hand another test mode can be provided, i.e. both can be started from scratch rising by the electric current of measured device, also can turn off insulated gate bipolar transistor IGBT _ B 5 again after first being produced required electric current by insulated gate bipolar transistor IGBT _ B 5 and open measured device, this kind of mode can be simulated measured device and open ability when big electric current.Voltage sensor 13 and current sensor 2 in device are control and protection system offer desired parameters, thus safety when ensureing test.
Panel 14 and IGBT drives 20 modules to be connected by cable or optical fiber 17, and the measured device 18 of different encapsulation all has the driving module of the plug and play of correspondence, easy for installation, quick, decreases the probability made mistakes.
Panel 14 is connected with touch control screen 16 by RS485 connecting line, described RS232 interface 15 can be connected with host computer by cable, during test, in addition to DC voltage value, all test parameters of (DC voltage value need on high-voltage DC power supply manually regulation) all can be configured by touch control screen 16 or host computer and adjust, and can arrange and include but not limited to the parameter adjusted: time corresponding to pulse number, each pulse, each interpulse period, full test electric current etc..
In whole test process, in addition to touch control screen 16, remaining device includes that measured device 18 is all enclosed in this test device, if device for opening cover artificial in test process, test can terminate immediately, and discharged to safe voltage by the voltage on DC support electric capacity 9, thus ensure the safety of tester.
In test process, operator adjusts the output voltage values of high-voltage DC power supply 11 according to the measured device 18 of different electric pressures.
In test process, operator arranges overcurrent protection value according to the measured device 18 of different current classes, and this operation is carried out on touch control screen 16 or host computer.
In test process, operator issues control command to panel 14 by man machine interface or host computer, panel 14 then instruction morphing sends this to insulated gate bipolar transistor IGBT _ A 4, insulated gate bipolar transistor IGBT _ B 5, insulated gate bipolar transistor IGBT _ C 12 for corresponding control signal by cable or optical fiber 17, controls insulated gate bipolar transistor IGBT _ A 4, insulated gate bipolar transistor IGBT _ B5, the turning on and off of insulated gate bipolar transistor IGBT _ C 12.
Measured device 18 includes but not limited to following device: insulated gate bipolar transistor IGBT, diode, controllable silicon, integrated gate commutated thyristor IGCT, metal-oxide half field effect transistor MOSFET etc..
Measured device 18 can be the parallel connection of multiple packaging of the same race, can be estimated device dynamic current equalizing effect time used in parallel.
After test completes, if be detected that there is the operation of device for opening cover, then the automatic cut-off breaker of control system open insulated gate bipolar transistor IGBT _ C to discharge the voltage on DC support electric capacity, ensure the safety of operator.
Above content is to combine concrete/preferred embodiment further detailed description of the utility model, it is impossible to assert that of the present utility model being embodied as is confined to these explanations.For this utility model person of an ordinary skill in the technical field; without departing from the concept of the premise utility; these embodiments having described that can also be made some replacements or modification by it, and these substitute or variant all should be considered as belonging to protection domain of the present utility model.
Claims (10)
1. a high-power semiconductor switch device testing apparatus, it is characterised in that: including: panel (14), main circuit, IGBT drive (20), IGBT bus, human-computer interaction interface, test fixture, main stack bus bar, measured device (18)；Described panel (14) drives (20), IGBT bus, main circuit to be connected with human-computer interaction interface, IGBT respectively；Described main circuit is integrated in described main stack bus bar；Described main stack bus bar includes the general-purpose interface connecting semiconductor power switch device, and the device for power switching of various encapsulation is connected with main stack bus bar by corresponding adaptive busbar；Described test fixture drives (20), IGBT bus to be connected with IGBT respectively.
2. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 1, it is characterised in that: also include: oscillograph (1), oscillograph isolation voltage probe (19) and oscilloscope current probe (3)；Described oscillograph (1) is connected with oscillograph isolation voltage probe (19) and oscilloscope current probe (3) respectively；Described oscillograph isolation voltage probe (19) and oscilloscope current probe (3) are connected with main circuit respectively.
3. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 1, it is characterized in that: described main circuit includes: voltage sensor (13), high-voltage DC power supply (11), chopper (10), DC support electric capacity (9), equalizing resistance (21), discharge resistance (8), insulated gate bipolar transistor IGBT _ C (12), air-core reactor (6), fly-wheel diode (7), insulated gate bipolar transistor IGBT _ A (4), insulated gate bipolar transistor IGBT _ B (5), current sensor (2)；Described main stack bus bar is connected with DC support electric capacity (9), equalizing resistance (21), air-core reactor (6), insulated gate bipolar transistor IGBT _ A (4), insulated gate bipolar transistor IGBT _ B (5), fly-wheel diode (7) respectively；Described high-voltage DC power supply (11) is connected by chopper (10) and main stack bus bar；Described insulated gate bipolar transistor IGBT _ C (12) is connected by discharge resistance (8) and main stack bus bar；Described voltage sensor (13) and high-voltage DC power supply (11) are in parallel；Described panel (14) is connected with current sensor (2) and voltage sensor (13) respectively.
4. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 1, it is characterized in that: described main stack bus bar also includes the junction point of air-core reactor (6), the general-purpose interface connecting through described main stack bus bar between it and measured device (18) realizes, and during test, described air-core reactor (6) is replaceable.
5. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 1, it is characterised in that: described panel (14) and IGBT drive (20) to be connected by cable or optical fiber (17).
6. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 1, it is characterised in that: described panel (14) and human-computer interaction interface are connected by RS485 bus；Described panel (14) also includes RS232 interface (15), is connected with host computer by cable.
7. a kind of high-power semiconductor switch device testing apparatus as described in claim 1 or 6, it is characterised in that: described human-computer interaction interface is touch control screen (16).
8. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 7, it is characterised in that: in addition to described touch control screen (16), remaining device includes that measured device (18) is all enclosed in described test device.
9. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 1, it is characterised in that: described measured device (18) including: insulated gate bipolar transistor IGBT, diode, controllable silicon, integrated gate commutated thyristor IGCT, metal-oxide half field effect transistor MOSFET.
10. a kind of high-power semiconductor switch device testing apparatus as claimed in claim 9, it is characterised in that: described measured device (18) also includes that multiple packaging of the same race is in parallel.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521141441.XU CN205539356U (en) | 2015-12-31 | 2015-12-31 | Big power semiconductor switching element testing arrangement |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521141441.XU CN205539356U (en) | 2015-12-31 | 2015-12-31 | Big power semiconductor switching element testing arrangement |
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| CN205539356U true CN205539356U (en) | 2016-08-31 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291309A (en) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | A kind of power semiconductor chip test cell and method of testing thereof |
| CN108680846A (en) * | 2018-05-09 | 2018-10-19 | 浙江埃菲生能源科技有限公司 | A kind of high-power IGBT module Online Transaction Processing |
| CN111812359A (en) * | 2018-07-18 | 2020-10-23 | 北京世纪金光半导体有限公司 | General dipulse test fixture of SiC MOSFET |
| CN114217217A (en) * | 2021-12-15 | 2022-03-22 | 极氪汽车(宁波杭州湾新区)有限公司 | Switching dynamic characteristic test circuit and system of inverter |
-
2015
- 2015-12-31 CN CN201521141441.XU patent/CN205539356U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291309A (en) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | A kind of power semiconductor chip test cell and method of testing thereof |
| CN108680846A (en) * | 2018-05-09 | 2018-10-19 | 浙江埃菲生能源科技有限公司 | A kind of high-power IGBT module Online Transaction Processing |
| CN108680846B (en) * | 2018-05-09 | 2020-06-09 | 浙江埃菲生能源科技有限公司 | High-power IGBT module on-line test system |
| CN111812359A (en) * | 2018-07-18 | 2020-10-23 | 北京世纪金光半导体有限公司 | General dipulse test fixture of SiC MOSFET |
| CN114217217A (en) * | 2021-12-15 | 2022-03-22 | 极氪汽车(宁波杭州湾新区)有限公司 | Switching dynamic characteristic test circuit and system of inverter |
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