CN203217240U - Self-adaptive imprinting head for large-area nanoimprinting - Google Patents

Self-adaptive imprinting head for large-area nanoimprinting Download PDF

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Publication number
CN203217240U
CN203217240U CN 201320254208 CN201320254208U CN203217240U CN 203217240 U CN203217240 U CN 203217240U CN 201320254208 CN201320254208 CN 201320254208 CN 201320254208 U CN201320254208 U CN 201320254208U CN 203217240 U CN203217240 U CN 203217240U
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CN
China
Prior art keywords
self
web joint
mould
base plate
substrate
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Expired - Fee Related
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CN 201320254208
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Chinese (zh)
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兰红波
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QINGDAO BONA PHOTOELECTRIC EQUIPMENT CO Ltd
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QINGDAO BONA PHOTOELECTRIC EQUIPMENT CO Ltd
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Abstract

The utility model discloses a self-adaptive imprinting head for large-area nanoimprinting. The self-adaptive imprinting head comprises a one-dimensional displacement platform, a connection support, a connection plate, springs and guide columns, wherein a vertical plate of the one-dimensional platform is connected with the connection support, one end of each of the springs is positioned in a groove in a baseplate of the connection support while the other end of the same is positioned in a groove in the connection plate, and the guide columns penetrate the connection plate and the springs and are connected with the baseplate of the connection support. The self-adaptive imprinting head has the advantages of simple structure, convenience in adjustment, low cost, wide applicability and high flexibility, can be applied to entire-wafer nanoimprinting and roller-to-roller nanoimprinting, and is particularly applicable to roller-to-plane nanoimprinting. An effective solution is provided for development of technologies and devices for large-area nanoimprint lithography.

Description

A kind of self-adaptation imprint head for the large-area nano impression
Technical field
The utility model relates to a kind of nano-imprint lithography imprint head, relates in particular to a kind of self-adaptation imprint head for the large-area nano imprint lithography, belongs to minute manufacturing and precision machinery technology field.
Background technology
(Nanoimprint Lithography is a kind of brand-new micro-nano patterned method NIL) to nano-imprint lithography, and it is that a kind of stress deformation that uses mould to pass through polymkeric substance is realized its patterned technology.Compare with other micro-nano manufacture method, NIL has high resolving power, Ultra Low Cost and large-duty characteristics, especially has more outstanding advantage in large area micro-nano rice structure and complex three-dimensional micro nano structure manufacture view.
NIL is a kind of contact complex technology, because the error of nano impression construction machine itself and the out-of-flatness of substrate self (exist warpage and distortion, especially for the LED epitaxial wafer), in the nano impression process, there is not parallel sum of errors wedge shape error, can not realize good conformal contact between mould and the substrate, if the nonparallelism sum of errors wedge shape error between substrate and the mould is not compensated, guarantee to have good conformal contact between mould and the substrate, can't guarantee then in moulding process between the mould and substrate that uniformity consistency contacts fully, obtain the residual layer thickness of uniformity, consistent coining pattern.If the nonparallelism between mould and the substrate surpasses certain degree, cause wedge shape to stay the thickness difference of film to surpass the height of impression feature, the failure of figure transfer will be caused, but also the damage of mould might be caused.In addition, mould and substrate not parallel may cause also that mould and substrate produce relative slippage in the nano impression process, and lateral spread takes place, and influences the precision of coining pattern; Mould also may damage the impression feature when the demoulding.In order to ensure having good conformal contact between mould and the substrate, traditional method is to increase force of impression, but this may cause local force of impression excessive, and this may cause the damage of local contact mould on the one hand, for frangible substrates such as III-V families, also cause substrate cracked easily.Therefore, in the nano impression process, must guarantee the depth of parallelism of mould and substrate, have good conformal contact between mould and the non-smooth substrate.In addition, repeating nano-imprint process with stepping compares, for large tracts of land full wafer wafer nano impression, keep between mould and the substrate the depth of parallelism with conformal contact even more important, each work step mould in each moulding process is relative with the contact area of substrate less because stepping repeats nano-imprint process, yet the area that mould and substrate contact simultaneously in the full wafer wafer nano impression process is big (whole wafer area) very, repeating nano-imprint process with the small size stepping compares, full wafer wafer nano impression has the effect that error is amplified, so full wafer wafer nano-imprint process is for keeping the depth of parallelism between mould and the substrate to contact more harsh requirement with conformal.So full wafer wafer nano-imprint lithography equipment must have mould and substrate parallelism is regulated and wedge shape error compensation function and good conformal engagement capacity.
Realize that mould mainly contains two kinds of schemes with the adjusting of substrate nonparallelism, wedge shape error compensation and mould with the good conformal method that contacts of substrate: the one, adjust substrate by wafer-supporting platform and realize; The 2nd, adjust mould by imprint head (impression mechanism) and realize.In addition, nano impression uses flexible soft mold can solve the problem of conformal contact.The adjustment mode that the nanometer stamping and photoetching machine of having developed at present and experimental provision mostly adopt wafer-supporting platform is regulated and the wedge shape compensation of error to realize mould and substrate parallelism.With compare by the method for wafer-supporting platform adjustment, the method that adopts imprint head (impression mechanism) to adjust has significant advantage at aspects such as adjusting effect, simplified apparatus complicacy, especially for large tracts of land pair of rollers plane nano impression, then can only adopt the method for imprint head adjustment.And if only adopt flexible soft mold can only solve the problem of conformal contact for the contour roll forming nano impression, be difficult to solve that the depth of parallelism is regulated and the problem of wedge shape error compensation.Therefore, press for the new solution based on the imprint head adjustment of exploitation.
Realize that by imprint head mould has two kinds with the adjustment of substrate nonparallelism, wedge shape error compensation and the conformal method that contacts: passive adjustment (also being called the self-adaptation adjustment) and ACTIVE CONTROL adjustment.The self-adaptation adjustment is to utilize the flexibility of mechanism self to come the nonparallelism of passive adaptation mould and substrate, the irregularity degree of substrate, when force of impression by mould action on substrate the time, the imprint head of carrying mould can produce corresponding minor rotation, compensation wedge shape sum of errors irregularity degree makes entire substrate stressed evenly.And this small rotation can realize by the flexibility of mechanism self.The method of self-adaptation adjustment mainly contains: flexure hinge mechanism, resiliency supported, universal float ball, wedge shape compensating module etc., the self-adaptation adjustment has significant advantage simple in structure, easy to adjust, that cost is low.The ACTIVE CONTROL adjustment is position and the nonparallelism that detects mould and substrate by measuring system, according to the result of feedback, initiatively adjusts pose between mould and the substrate, realization positioned parallel between the two by executive component.ACTIVE CONTROL has the precision of adjustment height, swift remarkable advantage, but the cost height, and control is complicated.
The utility model content
The purpose of this utility model is exactly in order to solve nonparallelism, the irregularity degree of substrate and the problem of wedge shape error compensation between the mould and substrate in the nano impression process, provide a kind of self-adaptation imprint head that is applicable to the large-area nano imprint process, to realize nonparallelism adjustment between mould and the substrate, wedge shape error compensation and good conformal the contact.
To achieve these goals, the utility model is taked following technical solution:
A kind of self-adaptation imprint head for the large-area nano impression comprises:
The one dimension displacement platform; The one dimension displacement platform be connected the support riser and be connected, described one dimension displacement platform realizes that imprint head moves along Z-direction, mould is applied the adjustment in gap between force of impression and mould and the substrate.
Connect support; Described connection support comprises riser, base plate, and described riser vertically is connected with base plate, connects support one dimension displacement platform, web joint, spring, guide pillar are formed a six degree of freedom passive adaptation Adjustment System.
Web joint; The web joint one side connects with the base plate that is connected support with guide pillar by spring, and another side is in order to fixed mould or die device.
Spring; Spring is fixed on and connects between support base plate and the web joint, and the rigidity of spring is determined according to impressing mould weight, gap adjustment amount and the force of impression size that applies.
Guide pillar; Guide pillar passes web joint, spring, and be connected the support base plate and fix, described guide pillar is used for the transversely deforming of restraining spring on the one hand, on the other hand be connected the gravity that support base plate and web joint carry mould and web joint self jointly, eliminate these gravity to the influence of force of impression.
As further improvement of the utility model, also be provided with gusset on the described web joint, be used for improving the rigidity that connects support.
Described guide pillar passes and connects the support base plate, and fixes by hold-down nut.
Described spring places the position at four angles that connect support base plate and web joint, and quantity is 4.
The lower surface of described connection support base plate and the upper surface of web joint are provided with groove, are used for placing and retainer spring (limiting the position of spring), and spring one end places and connects the support bottom plate groove, and the other end places the groove of web joint.
Also be provided with through hole on the described web joint, in order to fixed mould or die device.
Principle of work of the present utility model is: imprint head moves to the substrate direction under the one dimension displacement platform drives, the mould that is fixed on imprint head web joint below is with after substrate (perhaps wafer-supporting platform) contact, by connecting six degree of freedom Adjustment System realization mould that support, web joint, spring, guide pillar, hold-down nut form and the adjustment of substrate nonparallelism, the conformal contact and wedge shape error compensation.
The utility model provides a kind of self-adaptation imprint head for nano-imprint lithography, can be used for full wafer wafer metallic mold for nano-imprint and the adjustment of substrate nonparallelism, the conformal contact and wedge shape error compensation, especially in conjunction with the elastic roller soft mold, for contour roll forming nano impression (pair of rollers plane, pair of rollers roller) provides a kind of desirable solution, realize conformal the contact and mould and the adjustment of substrate nonparallelism and wedge shape error compensation that contour roll forming mould and non-smooth substrate are good.
The utlity model has following significant advantage:
(1) simple in structure, easy to adjust, cost is low;
(2) mould has good conformal the contact with non-smooth substrate;
(3) mould and substrate nonparallelism and wedge shape compensation of error are complete;
(4) adaptability is strong, and is flexible high, and along with the difference of wafer size, whole imprint head system mobility is little, can adapt to the requirement of different wafer size full wafer wafer nano-imprint process;
(5) applied range can be used for full wafer wafer nano impression, also can be used for pair of rollers roller type nano impression, is particularly useful for pair of rollers plane nano impression.For the exploitation of large-area nano imprint lithography process and equipment provides a kind of effective solution.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the utility model web joint structural representation.
Fig. 3 is that the utility model embodiment is used for rolling the self-adaptation imprint head structural representation to the plane nano impression.
Wherein, 1, one dimension displacement platform; 2, connect support; 3, web joint; 301 circular grooves; 302 manholes; 4, spring; 5, guide pillar; 6, hold-down nut; 7, roller type mould.
Embodiment
Be described in further detail according to the utility model of embodiment that the technical solution of the utility model provides below in conjunction with accompanying drawing and utility model people.
The utility model is specific embodiment with the self-adaptation imprint head that is used for pair of rollers plane nano impression.
A kind of be used to the self-adaptation imprint head of rolling the plane nano impression, comprise: one dimension displacement platform 1, connection support 2, web joint 3, spring 4, guide pillar 5, hold-down nut 6, roller type mould 7, as Figure 1-3, wherein, one dimension displacement platform 1 is connected with the riser that is connected support 2, spring 4 one ends place and connect support 2 bottom plate grooves, the other end places the groove of web joint 3, guide pillar 5 passes web joint 3, spring 4, connect support 2 base plates is connected with hold-down nut 6, and web joint 3 bottom surfaces are connected with roller type mould 7.
Described connection support 2 comprises riser, base plate and gusset, and wherein base plate has circular groove, is used for placing and retainer spring 4; Riser is connected with one dimension displacement platform 1; Gusset is used for improving whole connection support 2 rigidity.
Described web joint 3 upper surfaces have circular groove 301, are used for placing and retainer spring 4, have manhole 302, in order to fixed idler whell pattern tool 7.
The course of work of the present utility model is: imprint head moves to the substrate direction under one dimension displacement platform 1 drives, the roller type mould 7 that is fixed on imprint head web joint 3 belows is with after substrate contacts, and realizes roller type mould 7 and the adjustment of substrate nonparallelism, the conformal contact and wedge shape error compensation by connecting the six degree of freedom Adjustment System that support 2, web joint 3, spring 4, guide pillar 5, hold-down nut 6 form.
Though above-mentionedly by reference to the accompanying drawings embodiment of the present utility model is described; but be not the restriction to the utility model protection domain; one of ordinary skill in the art should be understood that; on the basis of the technical solution of the utility model, those skilled in the art do not need to pay various modifications that creative work can make or distortion still in protection domain of the present utility model.

Claims (6)

1. a self-adaptation imprint head that is used for the large-area nano impression is characterized in that, comprising:
The one dimension displacement platform; The one dimension displacement platform be connected the support riser and be connected;
Connect support; Described connection support comprises riser, base plate, and described riser vertically is connected with base plate;
Web joint; The web joint one side connects with the base plate that is connected support with guide pillar by spring;
Spring; Spring is fixed on and connects between support base plate and the web joint;
Guide pillar; Guide pillar passes web joint, spring, and be connected the support base plate and fix.
2. the self-adaptation imprint head for the large-area nano impression as claimed in claim 1 is characterized in that, also is provided with gusset on the described web joint.
3. the self-adaptation imprint head for the large-area nano impression as claimed in claim 1 is characterized in that, described guide pillar passes and connects the support base plate, and fixes by hold-down nut.
4. the self-adaptation imprint head for the large-area nano impression as claimed in claim 1 is characterized in that, described spring places the position at four angles that connect support base plate and web joint, and quantity is 4.
5. the self-adaptation imprint head for the large-area nano impression as claimed in claim 1 is characterized in that the lower surface of described connection support base plate and the upper surface of web joint are provided with groove.
6. the self-adaptation imprint head for the large-area nano impression as claimed in claim 1 is characterized in that, also is provided with through hole on the described web joint.
CN 201320254208 2013-05-10 2013-05-10 Self-adaptive imprinting head for large-area nanoimprinting Expired - Fee Related CN203217240U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320254208 CN203217240U (en) 2013-05-10 2013-05-10 Self-adaptive imprinting head for large-area nanoimprinting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103246161A (en) * 2013-05-10 2013-08-14 青岛博纳光电装备有限公司 Self-adaption imprinting head for large-area nano imprinting
CN105607415A (en) * 2016-02-25 2016-05-25 中国科学技术大学 Nanometer stamping head and stamping device with same
CN107901593A (en) * 2017-12-20 2018-04-13 苏州瑞恩工业产品设计有限公司 A kind of imprinting apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103246161A (en) * 2013-05-10 2013-08-14 青岛博纳光电装备有限公司 Self-adaption imprinting head for large-area nano imprinting
CN103246161B (en) * 2013-05-10 2015-09-02 青岛博纳光电装备有限公司 A kind of self-adaptation imprint head for large-area nano impression
CN105607415A (en) * 2016-02-25 2016-05-25 中国科学技术大学 Nanometer stamping head and stamping device with same
CN107901593A (en) * 2017-12-20 2018-04-13 苏州瑞恩工业产品设计有限公司 A kind of imprinting apparatus

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130925

Termination date: 20180510

CF01 Termination of patent right due to non-payment of annual fee